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DE3888148D1 - Integrierte Schaltung mit einem Lateraltransistor. - Google Patents

Integrierte Schaltung mit einem Lateraltransistor.

Info

Publication number
DE3888148D1
DE3888148D1 DE88202929T DE3888148T DE3888148D1 DE 3888148 D1 DE3888148 D1 DE 3888148D1 DE 88202929 T DE88202929 T DE 88202929T DE 3888148 T DE3888148 T DE 3888148T DE 3888148 D1 DE3888148 D1 DE 3888148D1
Authority
DE
Germany
Prior art keywords
integrated circuit
lateral transistor
transistor
lateral
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88202929T
Other languages
English (en)
Other versions
DE3888148T2 (de
Inventor
Pierre Leduc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3888148D1 publication Critical patent/DE3888148D1/de
Publication of DE3888148T2 publication Critical patent/DE3888148T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
DE3888148T 1987-12-30 1988-12-19 Integrierte Schaltung mit einem Lateraltransistor. Expired - Fee Related DE3888148T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8718388A FR2625611B1 (fr) 1987-12-30 1987-12-30 Circuit integre presentant un transistor lateral

Publications (2)

Publication Number Publication Date
DE3888148D1 true DE3888148D1 (de) 1994-04-07
DE3888148T2 DE3888148T2 (de) 1994-09-01

Family

ID=9358456

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888148T Expired - Fee Related DE3888148T2 (de) 1987-12-30 1988-12-19 Integrierte Schaltung mit einem Lateraltransistor.

Country Status (6)

Country Link
US (1) US4951108A (de)
EP (1) EP0322962B1 (de)
JP (1) JPH0793313B2 (de)
KR (1) KR0134778B1 (de)
DE (1) DE3888148T2 (de)
FR (1) FR2625611B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243112A (ja) * 1985-08-20 1987-02-25 株式会社三英社製作所 限流素子ユニツト
FR2661556A1 (fr) * 1990-04-27 1991-10-31 Philips Composants Circuit integre presentant un transistor lateral multi-collecteurs.
EP0570864A3 (en) * 1992-05-22 1994-07-06 Siemens Ag Monolithically integrated pnp transistor structure
FR2703831A1 (fr) * 1993-04-07 1994-10-14 Philips Composants Dispositif semiconducteur comprenant un transistor latéral.
US5485033A (en) * 1993-04-07 1996-01-16 U.S. Philips Corporation Lateral transistor having a particular emitter structure
JPH0964053A (ja) * 1995-08-18 1997-03-07 Mitsubishi Electric Corp ラテラル型トランジスタ
US5786622A (en) * 1997-05-16 1998-07-28 Tritech Microelectronics International Ltd. Bipolar transistor with a ring emitter
TW483171B (en) * 2000-03-16 2002-04-11 Trw Inc Ultra high speed heterojunction bipolar transistor having a cantilevered base.
US8115280B2 (en) * 2005-10-31 2012-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Four-terminal gate-controlled LVBJTs
US8324713B2 (en) * 2005-10-31 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Profile design for lateral-vertical bipolar junction transistor
DE102010001788A1 (de) 2010-02-10 2011-08-11 Forschungsverbund Berlin e.V., 12489 Skalierbarer Aufbau für laterale Halbleiterbauelemente mit hoher Stromtragfähigkeit
CN102315256B (zh) * 2010-07-08 2014-05-14 旺宏电子股份有限公司 双极接面晶体管装置
US8319315B2 (en) * 2010-07-30 2012-11-27 Macronix International Co., Ltd. Bipolar junction transistor devices
JP5602890B2 (ja) 2013-01-29 2014-10-08 ファナック株式会社 蓄電装置および抵抗放電装置を有するモータ制御装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443173A (en) * 1966-05-17 1969-05-06 Sprague Electric Co Narrow emitter lateral transistor
US4231059A (en) * 1978-11-01 1980-10-28 Westinghouse Electric Corp. Technique for controlling emitter ballast resistance
JPS56162864A (en) * 1980-05-19 1981-12-15 Hitachi Ltd Semiconductor device
US4654687A (en) * 1985-03-28 1987-03-31 Francois Hebert High frequency bipolar transistor structures
FR2592525B1 (fr) * 1985-12-31 1988-02-12 Radiotechnique Compelec Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant

Also Published As

Publication number Publication date
EP0322962B1 (de) 1994-03-02
FR2625611A1 (fr) 1989-07-07
KR890011101A (ko) 1989-08-12
FR2625611B1 (fr) 1990-05-04
KR0134778B1 (en) 1998-04-20
EP0322962A1 (de) 1989-07-05
DE3888148T2 (de) 1994-09-01
JPH023241A (ja) 1990-01-08
JPH0793313B2 (ja) 1995-10-09
US4951108A (en) 1990-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee