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DE3885112D1 - Gehäuse einer integrierten Schaltung. - Google Patents

Gehäuse einer integrierten Schaltung.

Info

Publication number
DE3885112D1
DE3885112D1 DE88100686T DE3885112T DE3885112D1 DE 3885112 D1 DE3885112 D1 DE 3885112D1 DE 88100686 T DE88100686 T DE 88100686T DE 3885112 T DE3885112 T DE 3885112T DE 3885112 D1 DE3885112 D1 DE 3885112D1
Authority
DE
Germany
Prior art keywords
integrated circuit
circuit package
package
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88100686T
Other languages
English (en)
Other versions
DE3885112T2 (de
Inventor
Akira C O Itami Works Ohtsuka
Tomoji C O Itami Works Of Goto
Masao Ida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sumitomo Electric Industries Ltd filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3885112D1 publication Critical patent/DE3885112D1/de
Publication of DE3885112T2 publication Critical patent/DE3885112T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
DE88100686T 1987-01-19 1988-01-19 Gehäuse einer integrierten Schaltung. Expired - Fee Related DE3885112T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62010929A JPH088321B2 (ja) 1987-01-19 1987-01-19 集積回路パツケ−ジ

Publications (2)

Publication Number Publication Date
DE3885112D1 true DE3885112D1 (de) 1993-12-02
DE3885112T2 DE3885112T2 (de) 1994-02-24

Family

ID=11763921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88100686T Expired - Fee Related DE3885112T2 (de) 1987-01-19 1988-01-19 Gehäuse einer integrierten Schaltung.

Country Status (5)

Country Link
US (1) US4879588A (de)
EP (1) EP0275973B1 (de)
JP (1) JPH088321B2 (de)
CA (1) CA1278882C (de)
DE (1) DE3885112T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2507476B2 (ja) * 1987-09-28 1996-06-12 株式会社東芝 半導体集積回路装置
US4972253A (en) * 1988-06-27 1990-11-20 Digital Equipment Corporation Programmable ceramic high performance custom package
JP2592308B2 (ja) * 1988-09-30 1997-03-19 株式会社日立製作所 半導体パッケージ及びそれを用いたコンピュータ
GB2233821A (en) * 1989-07-11 1991-01-16 Oxley Dev Co Ltd Ceramic package including a semiconductor chip
US5223741A (en) * 1989-09-01 1993-06-29 Tactical Fabs, Inc. Package for an integrated circuit structure
JPH0732208B2 (ja) * 1989-10-31 1995-04-10 三菱電機株式会社 半導体装置
US5159750A (en) * 1989-12-20 1992-11-03 National Semiconductor Corporation Method of connecting an IC component with another electrical component
US5008734A (en) * 1989-12-20 1991-04-16 National Semiconductor Corporation Stadium-stepped package for an integrated circuit with air dielectric
JPH03216776A (ja) * 1990-01-22 1991-09-24 Mitsubishi Electric Corp 集積回路装置及びそれにより構成されたマイクロプロセッサ
EP0444820A3 (en) * 1990-02-26 1992-07-08 Raytheon Company Mmic package and connection
US5214498A (en) * 1990-02-26 1993-05-25 Raytheon Company MMIC package and connector
ATE120883T1 (de) * 1990-05-28 1995-04-15 Siemens Ag Ic-gehäuse, bestehend aus drei beschichteten dielektrischen platten.
US5043794A (en) * 1990-09-24 1991-08-27 At&T Bell Laboratories Integrated circuit package and compact assemblies thereof
EP0482812B1 (de) * 1990-10-26 1998-01-07 Sumitomo Electric Industries, Ltd. Verfahren zum Herstellen von wärmestrahlender Substraten zum Montieren von Halbleitern und gemäss diesem Verfahren hergestellte Halbleiterpackung
US5132613A (en) * 1990-11-30 1992-07-21 International Business Machines Corporation Low inductance side mount decoupling test structure
US5221860A (en) * 1991-02-19 1993-06-22 At&T Bell Laboratories High speed laser package
JPH05160292A (ja) * 1991-06-06 1993-06-25 Toshiba Corp 多層パッケージ
EP0562629A2 (de) * 1992-03-26 1993-09-29 Sumitomo Electric Industries, Limited Halbleiteranordnung mit einer Packung
US5777265A (en) * 1993-01-21 1998-07-07 Intel Corporation Multilayer molded plastic package design
US5325268A (en) * 1993-01-28 1994-06-28 National Semiconductor Corporation Interconnector for a multi-chip module or package
JPH06244231A (ja) * 1993-02-01 1994-09-02 Motorola Inc 気密半導体デバイスおよびその製造方法
US5338970A (en) * 1993-03-24 1994-08-16 Intergraph Corporation Multi-layered integrated circuit package with improved high frequency performance
US5455385A (en) * 1993-06-28 1995-10-03 Harris Corporation Multilayer LTCC tub architecture for hermetically sealing semiconductor die, external electrical access for which is provided by way of sidewall recesses
US5753972A (en) * 1993-10-08 1998-05-19 Stratedge Corporation Microelectronics package
US5736783A (en) * 1993-10-08 1998-04-07 Stratedge Corporation. High frequency microelectronics package
US5498905A (en) * 1994-08-26 1996-03-12 Hughes Aircraft Company Layered features for co-fired module integration
JP2817717B2 (ja) * 1996-07-25 1998-10-30 日本電気株式会社 半導体装置およびその製造方法
US5787575A (en) * 1996-09-09 1998-08-04 Intel Corporation Method for plating a bond finger of an intergrated circuit package
US6376904B1 (en) * 1999-12-23 2002-04-23 Rambus Inc. Redistributed bond pads in stacked integrated circuit die package
US6621155B1 (en) 1999-12-23 2003-09-16 Rambus Inc. Integrated circuit device having stacked dies and impedance balanced transmission lines
US20040120371A1 (en) * 2000-02-18 2004-06-24 Jds Uniphase Corporation Contact structure for a semiconductor component
US6674775B1 (en) 2000-02-18 2004-01-06 Jds Uniphase Corporation Contact structure for semiconductor lasers
US6833984B1 (en) 2000-05-03 2004-12-21 Rambus, Inc. Semiconductor module with serial bus connection to multiple dies
US7122889B2 (en) * 2000-05-03 2006-10-17 Rambus, Inc. Semiconductor module
JP2003007882A (ja) * 2001-06-27 2003-01-10 Sumitomo Electric Ind Ltd 光半導体気密封止容器及びそれを用いた光半導体モジュール
US6721189B1 (en) * 2002-03-13 2004-04-13 Rambus, Inc. Memory module
JP3804629B2 (ja) 2002-04-25 2006-08-02 ヤマハ株式会社 熱電装置用パッケージ
JP4845554B2 (ja) * 2006-03-27 2011-12-28 京セラ株式会社 多層配線基板およびその製造方法
US7563646B2 (en) 2007-05-31 2009-07-21 Stratedge Corporation Molded ceramic surface mount package
US20110048796A1 (en) * 2008-01-30 2011-03-03 Kyocera Corporation Connector, Package Using the Same and Electronic Device
US8476749B2 (en) * 2009-07-22 2013-07-02 Oracle America, Inc. High-bandwidth ramp-stack chip package
US9485867B2 (en) * 2010-10-27 2016-11-01 Kyocera Corporation Wiring board
US9082632B2 (en) 2012-05-10 2015-07-14 Oracle International Corporation Ramp-stack chip package with variable chip spacing
US10074590B1 (en) * 2017-07-02 2018-09-11 Infineon Technologies Ag Molded package with chip carrier comprising brazed electrically conductive layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577181A (en) * 1969-02-13 1971-05-04 Rca Corp Transistor package for microwave stripline circuits
US3626259A (en) * 1970-07-15 1971-12-07 Trw Inc High-frequency semiconductor package
US3825805A (en) * 1971-06-25 1974-07-23 Rca Corp Transistor carrier for microwave stripline circuit
US4417392A (en) * 1980-05-15 1983-11-29 Cts Corporation Process of making multi-layer ceramic package
CA1188010A (en) * 1981-05-06 1985-05-28 Leonard W. Schaper Package for a semiconductor chip
JPS58197861A (ja) * 1982-05-14 1983-11-17 Nec Corp セラミック基板
US4608592A (en) * 1982-07-09 1986-08-26 Nec Corporation Semiconductor device provided with a package for a semiconductor element having a plurality of electrodes to be applied with substantially same voltage
US4498122A (en) * 1982-12-29 1985-02-05 At&T Bell Laboratories High-speed, high pin-out LSI chip package
US4630172A (en) * 1983-03-09 1986-12-16 Printed Circuits International Semiconductor chip carrier package with a heat sink
JPS60134440A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体集積回路装置
CA1246755A (en) * 1985-03-30 1988-12-13 Akira Miyauchi Semiconductor device
US4701573A (en) * 1985-09-26 1987-10-20 Itt Gallium Arsenide Technology Center Semiconductor chip housing

Also Published As

Publication number Publication date
DE3885112T2 (de) 1994-02-24
JPH088321B2 (ja) 1996-01-29
JPS63177541A (ja) 1988-07-21
EP0275973A2 (de) 1988-07-27
EP0275973B1 (de) 1993-10-27
EP0275973A3 (en) 1988-09-14
CA1278882C (en) 1991-01-08
US4879588A (en) 1989-11-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee