DE3885658D1 - Herstellung einer Halbleiterstruktur. - Google Patents

Herstellung einer Halbleiterstruktur.

Info

Publication number: DE3885658D1
Authority: DE; Germany
Prior art keywords: manufacture; semiconductor structure; semiconductor
Prior art date: 1987-06-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE88305272T

Other languages

English (en)

Other versions

DE3885658T2 (de

Inventor

Osman Ersed Akcasu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fairchild Semiconductor Corp

Original Assignee

Fairchild Semiconductor Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-11

Filing date

1988-06-09

Publication date

1993-12-23

1988-06-09 Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp

1993-12-23 Application granted granted Critical

1993-12-23 Publication of DE3885658D1 publication Critical patent/DE3885658D1/de

1994-06-01 Publication of DE3885658T2 publication Critical patent/DE3885658T2/de

2008-06-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/251—Lateral thyristors

DE3885658T 1987-06-11 1988-06-09 Herstellung einer Halbleiterstruktur. Expired - Fee Related DE3885658T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US6175487A	1987-06-11	1987-06-11

Publications (2)

Publication Number	Publication Date
DE3885658D1 true DE3885658D1 (de)	1993-12-23
DE3885658T2 DE3885658T2 (de)	1994-06-01

Family

ID=22037905

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3885658T Expired - Fee Related DE3885658T2 (de)	1987-06-11	1988-06-09	Herstellung einer Halbleiterstruktur.

Country Status (4)

Country	Link
EP (1)	EP0295097B1 (de)
JP (1)	JPS6464353A (de)
CA (1)	CA1307354C (de)
DE (1)	DE3885658T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01187972A (ja) *	1988-01-22	1989-07-27	Nec Corp	バイポーラ型半導体記憶装置
US4979011A (en) *	1989-12-15	1990-12-18	Harris Corporation	SCR structure for fast turn-on switching

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5164382A (en) *	1974-12-02	1976-06-03	Mitsubishi Electric Corp	Yokogatasairisutano seizohoho
FR2358748A1 (fr) *	1976-07-15	1978-02-10	Radiotechnique Compelec	Procede d'autoalignement des elements d'un dispositif semi-conducteur et dispositif realise suivant ce procede
FR2413788A1 (fr) *	1977-12-30	1979-07-27	Ibm France	Structure d'isolation et son application a la realisation d'un thyristor
JPS5527617A (en) *	1978-08-17	1980-02-27	Mitsubishi Electric Corp	Semiconductor device manufacturing method

1988
- 1988-06-09 DE DE3885658T patent/DE3885658T2/de not_active Expired - Fee Related
- 1988-06-09 EP EP88305272A patent/EP0295097B1/de not_active Expired - Lifetime
- 1988-06-10 CA CA000569159A patent/CA1307354C/en not_active Expired - Fee Related
- 1988-06-10 JP JP63141935A patent/JPS6464353A/ja active Pending

Also Published As

Publication number	Publication date
DE3885658T2 (de)	1994-06-01
CA1307354C (en)	1992-09-08
JPS6464353A (en)	1989-03-10
EP0295097B1 (de)	1993-11-18
EP0295097A1 (de)	1988-12-14

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Legal Events

Date	Code	Title	Description
1994-12-15	8364	No opposition during term of opposition
2008-04-17	8339	Ceased/non-payment of the annual fee