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FR2413788A1 - Structure d'isolation et son application a la realisation d'un thyristor - Google Patents

Structure d'isolation et son application a la realisation d'un thyristor

Info

Publication number
FR2413788A1
FR2413788A1 FR7739967A FR7739967A FR2413788A1 FR 2413788 A1 FR2413788 A1 FR 2413788A1 FR 7739967 A FR7739967 A FR 7739967A FR 7739967 A FR7739967 A FR 7739967A FR 2413788 A1 FR2413788 A1 FR 2413788A1
Authority
FR
France
Prior art keywords
thyristor
region
insulation
realization
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7739967A
Other languages
English (en)
Inventor
C Benichou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie IBM France SAS
Original Assignee
Compagnie IBM France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie IBM France SAS filed Critical Compagnie IBM France SAS
Priority to FR7739967A priority Critical patent/FR2413788A1/fr
Priority to JP14346378A priority patent/JPS5494890A/ja
Publication of FR2413788A1 publication Critical patent/FR2413788A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

STRUCTURE D'ISOLATION PARTICULIEREMENT DESTINEE A ISOLER UN THYRISTOR DESTINE A LA REALISATION D'UNE MATRICE DE POINTS DE COUPLAGE POUR CENTRAL TELEPHONIQUE. LE THYRISTOR COMPREND UNE CATHODE 1, UNE PORTE 2, ET DEUX REGIONS D'ANODE 4 ET 4 RELIEES ENSEMBLE, CES ELEMENTS ETANT DISPOSES DANS UNE CUVETTE DEFINIE PAR DES MURS D'ISOLEMENT 5, ET UNE REGION DE SOUS-COLLECTEUR 3. LA STRUCTURE D'ISOLATION EST CONSTITUEE PAR LA REGION 10 DU MEME TYPE DE CONDUCTIVITE QUE LES REGIONS DE PORTE ET D'ANODE, ET LA REGION 11 DE CONDUCTIVITE OPPOSEE. LA REGION 10 ENTOURE LE THYRISTOR ET VIENT BUTER CONTRE LE SOUS-COLLECTEUR. APPLICATION A L'ISOLATION DE STRUCTURES SEMI-CONDUCTRICES.
FR7739967A 1977-12-30 1977-12-30 Structure d'isolation et son application a la realisation d'un thyristor Withdrawn FR2413788A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7739967A FR2413788A1 (fr) 1977-12-30 1977-12-30 Structure d'isolation et son application a la realisation d'un thyristor
JP14346378A JPS5494890A (en) 1977-12-30 1978-11-22 Separation structure for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739967A FR2413788A1 (fr) 1977-12-30 1977-12-30 Structure d'isolation et son application a la realisation d'un thyristor

Publications (1)

Publication Number Publication Date
FR2413788A1 true FR2413788A1 (fr) 1979-07-27

Family

ID=9199636

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739967A Withdrawn FR2413788A1 (fr) 1977-12-30 1977-12-30 Structure d'isolation et son application a la realisation d'un thyristor

Country Status (2)

Country Link
JP (1) JPS5494890A (fr)
FR (1) FR2413788A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0295097B1 (fr) * 1987-06-11 1993-11-18 Fairchild Semiconductor Corporation Fabrication d'une structure semi-conductrice

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812405A (en) * 1973-01-29 1974-05-21 Motorola Inc Stable thyristor device
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
US3999215A (en) * 1972-05-31 1976-12-21 U.S. Philips Corporation Integrated semiconductor device comprising multi-layer circuit element and short-circuit means

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
US3999215A (en) * 1972-05-31 1976-12-21 U.S. Philips Corporation Integrated semiconductor device comprising multi-layer circuit element and short-circuit means
US3812405A (en) * 1973-01-29 1974-05-21 Motorola Inc Stable thyristor device

Also Published As

Publication number Publication date
JPS5494890A (en) 1979-07-26

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Legal Events

Date Code Title Description
ST Notification of lapse