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DE3884896D1 - Verbindungshalbleiter-MESFET. - Google Patents

Verbindungshalbleiter-MESFET.

Info

Publication number
DE3884896D1
DE3884896D1 DE88114148T DE3884896T DE3884896D1 DE 3884896 D1 DE3884896 D1 DE 3884896D1 DE 88114148 T DE88114148 T DE 88114148T DE 3884896 T DE3884896 T DE 3884896T DE 3884896 D1 DE3884896 D1 DE 3884896D1
Authority
DE
Germany
Prior art keywords
compound semiconductor
semiconductor mesfet
mesfet
compound
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88114148T
Other languages
English (en)
Other versions
DE3884896T2 (de
Inventor
Toru Patent Division Suga
Yutaka Patent Divisio Tomisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3884896D1 publication Critical patent/DE3884896D1/de
Application granted granted Critical
Publication of DE3884896T2 publication Critical patent/DE3884896T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
DE88114148T 1987-08-31 1988-08-30 Verbindungshalbleiter-MESFET. Expired - Fee Related DE3884896T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217264A JPS6459961A (en) 1987-08-31 1987-08-31 Semiconductor device

Publications (2)

Publication Number Publication Date
DE3884896D1 true DE3884896D1 (de) 1993-11-18
DE3884896T2 DE3884896T2 (de) 1994-02-10

Family

ID=16701415

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88114148T Expired - Fee Related DE3884896T2 (de) 1987-08-31 1988-08-30 Verbindungshalbleiter-MESFET.

Country Status (3)

Country Link
EP (1) EP0305975B1 (de)
JP (1) JPS6459961A (de)
DE (1) DE3884896T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683571B2 (ja) * 1990-07-30 1994-10-19 いすゞ自動車株式会社 渦電流式減速装置
JPH06283553A (ja) * 1993-03-30 1994-10-07 Mitsubishi Electric Corp 電界効果トランジスタ、及びその製造方法
JPH10223775A (ja) * 1997-01-31 1998-08-21 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
US6906350B2 (en) 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
JP2004273888A (ja) * 2003-03-11 2004-09-30 Hitachi Cable Ltd 電界効果トランジスタ用エピタキシャルウェハ
US7348612B2 (en) 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7265399B2 (en) 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
US7326962B2 (en) 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
US8203185B2 (en) 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US7402844B2 (en) 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
US7646043B2 (en) 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
JP5618571B2 (ja) * 2010-03-02 2014-11-05 パナソニック株式会社 電界効果トランジスタ
JP5739564B2 (ja) * 2014-04-11 2015-06-24 パナソニック株式会社 電界効果トランジスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768078A (en) * 1980-10-15 1982-04-26 Nippon Telegr & Teleph Corp <Ntt> Normally off type field effect transistor
JPS60189250A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
JPH0714055B2 (ja) * 1984-09-03 1995-02-15 日本電気株式会社 電界効果型素子

Also Published As

Publication number Publication date
EP0305975A2 (de) 1989-03-08
EP0305975A3 (en) 1989-10-18
JPS6459961A (en) 1989-03-07
EP0305975B1 (de) 1993-10-13
DE3884896T2 (de) 1994-02-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee