DE3853305D1 - Verfahren zur Herstellung von feinsten Strukturen in Lacken durch Elektronen- oder Röntgenstrahllithographie. - Google Patents

Verfahren zur Herstellung von feinsten Strukturen in Lacken durch Elektronen- oder Röntgenstrahllithographie.

Info

Publication number: DE3853305D1
Authority: DE; Germany
Prior art keywords: paints; electron; production; ray lithography; finest structures
Prior art date: 1987-01-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE3853305T

Other languages

English (en)

Other versions

DE3853305T2 (de

Inventor

Koichi C O Fujitsu L Kobayashi

Yasushi C O Fujitsu Takahashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-01-27

Filing date

1988-01-18

Publication date

1995-04-20

1988-01-18 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1995-04-20 Publication of DE3853305D1 publication Critical patent/DE3853305D1/de

1995-08-03 Application granted granted Critical

1995-08-03 Publication of DE3853305T2 publication Critical patent/DE3853305T2/de

2008-01-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Architecture (AREA)
Structural Engineering (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Electron Beam Exposure (AREA)

DE3853305T 1987-01-27 1988-01-18 Verfahren zur Herstellung von feinsten Strukturen in Lacken durch Elektronen- oder Röntgenstrahllithographie. Expired - Fee Related DE3853305T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62016727A JPS63185022A (ja)	1987-01-27	1987-01-27	パタ−ン形成方法

Publications (2)

Publication Number	Publication Date
DE3853305D1 true DE3853305D1 (de)	1995-04-20
DE3853305T2 DE3853305T2 (de)	1995-08-03

Family

ID=11924295

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3853305T Expired - Fee Related DE3853305T2 (de)	1987-01-27	1988-01-18	Verfahren zur Herstellung von feinsten Strukturen in Lacken durch Elektronen- oder Röntgenstrahllithographie.

Country Status (5)

Country	Link
US (1)	US5104772A (de)
EP (1)	EP0276717B1 (de)
JP (1)	JPS63185022A (de)
KR (1)	KR910007315B1 (de)
DE (1)	DE3853305T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4024275A1 (de) *	1990-07-31	1992-02-06	Kernforschungsz Karlsruhe	Verfahren zur herstellung von mikrostrukturen mit bereichsweise unterschiedlicher strukturhoehe
US5393634A (en) *	1993-05-27	1995-02-28	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Continuous phase and amplitude holographic elements
US5789140A (en) *	1996-04-25	1998-08-04	Fujitsu Limited	Method of forming a pattern or via structure utilizing supplemental electron beam exposure and development to remove image residue
JPH11162844A (ja) *	1997-09-25	1999-06-18	Toshiba Corp	パターン形成方法
US6528934B1 (en)	2000-05-30	2003-03-04	Chunghwa Picture Tubes Ltd.	Beam forming region for electron gun
WO2003071587A1 (en) *	2002-02-15	2003-08-28	University Of Delaware	Process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination
DE102007010035A1 (de)	2007-03-01	2008-09-04	Voith Patent Gmbh	Verfahren zur Aufbereitung von Altpapier
FR3048292B1 (fr) *	2016-02-25	2018-03-30	Commissariat A L'energie Atomique Et Aux Energies Alternatives	Procede de lithographie electronique avec ecrantage electrostatique

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4056393A (en) *	1974-09-26	1977-11-01	American Can Company	Method of recording information using a copolymer of glycidyl methacrylate and allyl glycidyl ether
JPS5596942A (en) *	1979-01-19	1980-07-23	Matsushita Electric Ind Co Ltd	Method and apparatus for producing minute pattern
DE2927242A1 (de) *	1979-07-05	1981-01-08	Siemens Ag	Korpuskel- oder roentgenlithografisches verfahren zur strukturerzeugung
JPS56140345A (en) *	1980-04-02	1981-11-02	Hitachi Ltd	Formation of pattern
EP0037708B1 (de) *	1980-04-02	1986-07-30	Hitachi, Ltd.	Verfahren zur Herstellung eines Musters
JPS56164531A (en) *	1980-05-21	1981-12-17	Hitachi Ltd	Manufacture of semiconductor
US4508813A (en) *	1980-06-16	1985-04-02	Fujitsu Limited	Method for producing negative resist images
JPS57102018A (en) *	1980-12-17	1982-06-24	Mitsubishi Electric Corp	Pattern correction
JPS5877230A (ja) *	1981-11-04	1983-05-10	Hitachi Ltd	パタ−ン形成方法
JPS58200534A (ja) *	1982-05-19	1983-11-22	Hitachi Ltd	パタ−ン形成方法
US4552831A (en) *	1984-02-06	1985-11-12	International Business Machines Corporation	Fabrication method for controlled via hole process
JPS612326A (ja) *	1984-06-14	1986-01-08	Toshiba Corp	レジストパタ−ンの形成方法
JPS61141133A (ja) *	1984-12-13	1986-06-28	Nec Corp	微細パタ−ン形成法
EP0195106B1 (de) *	1985-03-22	1989-06-21	Ibm Deutschland Gmbh	Herstellung einer Abhebemaske und ihre Anwendung
JPS62160981A (ja) *	1986-01-08	1987-07-16	Mitsubishi Heavy Ind Ltd	石油タンカ−の改造法
CA1285418C (en) *	1985-07-18	1991-07-02	Robert A. Owens	Pre-exposure method for increased sensitivity in high contrast resist development
JPS6221151A (ja) *	1985-07-19	1987-01-29	Matsushita Electric Ind Co Ltd	パタ−ン形成方法
JPS6378523A (ja) *	1986-09-22	1988-04-08	Hitachi Ltd	パタ−ン形成方法
JPH0715891B2 (ja) *	1989-08-14	1995-02-22	大同ほくさん株式会社	ウエハ上に多結晶シリコン膜を形成する方法

1987
- 1987-01-27 JP JP62016727A patent/JPS63185022A/ja active Granted
- 1987-12-31 KR KR1019870015597A patent/KR910007315B1/ko not_active Expired
1988
- 1988-01-18 EP EP88100606A patent/EP0276717B1/de not_active Expired - Lifetime
- 1988-01-18 DE DE3853305T patent/DE3853305T2/de not_active Expired - Fee Related
1991
- 1991-03-08 US US07/666,567 patent/US5104772A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US5104772A (en)	1992-04-14
KR910007315B1 (ko)	1991-09-24
JPS63185022A (ja)	1988-07-30
EP0276717A3 (en)	1990-11-14
DE3853305T2 (de)	1995-08-03
KR880009292A (ko)	1988-09-14
EP0276717A2 (de)	1988-08-03
EP0276717B1 (de)	1995-03-15
JPH0551169B2 (de)	1993-07-30

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Legal Events

Date	Code	Title	Description
1996-04-11	8364	No opposition during term of opposition
1997-01-16	8339	Ceased/non-payment of the annual fee