DE3787848D1 - Halbleiterdiode. - Google Patents

Halbleiterdiode.

Info

Publication number: DE3787848D1
Authority: DE; Germany
Prior art keywords: semiconductor diode; diode; semiconductor
Prior art date: 1986-08-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE87201403T

Other languages

English (en)

Other versions

DE3787848T2 (de

Inventor

Kenneth Ronald Whight

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-08-08

Filing date

1987-07-22

Publication date

1993-11-25

1987-07-22 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1993-11-25 Application granted granted Critical

1993-11-25 Publication of DE3787848D1 publication Critical patent/DE3787848D1/de

1994-04-14 Publication of DE3787848T2 publication Critical patent/DE3787848T2/de

2007-07-23 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having localised breakdown regions, e.g. built-in avalanching regions

DE87201403T 1986-08-08 1987-07-22 Halbleiterdiode. Expired - Fee Related DE3787848T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB08619425A GB2193596A (en)	1986-08-08	1986-08-08	A semiconductor diode

Publications (2)

Publication Number	Publication Date
DE3787848D1 true DE3787848D1 (de)	1993-11-25
DE3787848T2 DE3787848T2 (de)	1994-04-14

Family

ID=10602468

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE87201403T Expired - Fee Related DE3787848T2 (de)	1986-08-08	1987-07-22	Halbleiterdiode.

Country Status (5)

Country	Link
US (1)	US4825266A (de)
EP (1)	EP0255971B1 (de)
JP (1)	JP2554093B2 (de)
DE (1)	DE3787848T2 (de)
GB (1)	GB2193596A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4951101A (en) *	1988-08-25	1990-08-21	Micrel Incorporated	Diamond shorting contact for semiconductors
US5155568A (en) *	1989-04-14	1992-10-13	Hewlett-Packard Company	High-voltage semiconductor device
US4927772A (en) *	1989-05-30	1990-05-22	General Electric Company	Method of making high breakdown voltage semiconductor device
GB2237930A (en) *	1989-11-01	1991-05-15	Philips Electronic Associated	A semiconductor device and method of manufacturing a semiconductor device
DE4423619A1 (de) *	1994-07-06	1996-01-11	Bosch Gmbh Robert	Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung
FR2753837B1 (fr) *	1996-09-25	1999-01-29		Composant de protection a retournement bidirectionnel a claquage en surface
GB2354879B (en) *	1999-08-11	2004-05-12	Mitel Semiconductor Ltd	A semiconductor device
JP2002184952A (ja) *	2000-12-15	2002-06-28	Shindengen Electric Mfg Co Ltd	半導体装置、半導体装置の製造方法
JP5195186B2 (ja) *	2008-09-05	2013-05-08	三菱電機株式会社	半導体装置の製造方法
FR2960097A1 (fr) *	2010-05-11	2011-11-18	St Microelectronics Tours Sas	Composant de protection bidirectionnel
RU167444U1 (ru) *	2016-06-30	2017-01-10	Акционерное общество "Государственный завод "Пульсар"	Мощный диод

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3577043A (en) *	1967-12-07	1971-05-04	United Aircraft Corp	Mosfet with improved voltage breakdown characteristics
GB1276791A (en) *	1969-01-22	1972-06-07	Tokyo Shibaura Electric Co	Semiconductor device
DE1920397A1 (de) *	1969-04-22	1970-11-12	Siemens Ag	Stabilisiertes Halbleiterbauelement
US3890698A (en) *	1971-11-01	1975-06-24	Motorola Inc	Field shaping layer for high voltage semiconductors
SE414357B (sv) *	1978-08-17	1980-07-21	Asea Ab	Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp
DE2846637A1 (de) *	1978-10-11	1980-04-30	Bbc Brown Boveri & Cie	Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
SE423946B (sv) *	1980-10-08	1982-06-14	Asea Ab	Tyristor anordnad for sjelvtendning
US4441114A (en) *	1981-12-22	1984-04-03	International Business Machines Corporation	CMOS Subsurface breakdown zener diode
GB2113907B (en) *	1981-12-22	1986-03-19	Texas Instruments Ltd	Reverse-breakdown pn junction devices
GB2131603B (en) *	1982-12-03	1985-12-18	Philips Electronic Associated	Semiconductor devices
FR2566963B1 (fr) *	1984-06-29	1987-03-06	Silicium Semiconducteur Ssc	Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite
SE455552B (sv) *	1985-02-26	1988-07-18	Asea Ab	Halvledaranordning innefattande en overspenningsskyddskrets

1986
- 1986-08-08 GB GB08619425A patent/GB2193596A/en not_active Withdrawn
1987
- 1987-07-02 US US07/072,196 patent/US4825266A/en not_active Expired - Lifetime
- 1987-07-22 EP EP87201403A patent/EP0255971B1/de not_active Expired - Lifetime
- 1987-07-22 DE DE87201403T patent/DE3787848T2/de not_active Expired - Fee Related
- 1987-08-06 JP JP62195390A patent/JP2554093B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US4825266A (en)	1989-04-25
EP0255971B1 (de)	1993-10-20
EP0255971A3 (en)	1988-07-20
EP0255971A2 (de)	1988-02-17
DE3787848T2 (de)	1994-04-14
GB2193596A (en)	1988-02-10
JP2554093B2 (ja)	1996-11-13
GB8619425D0 (en)	1986-09-17
JPS6343371A (ja)	1988-02-24

Publication	Publication Date	Title
DE3751548D1 (de)	1995-11-02	Halbleiterlaser.
DE3483769D1 (de)	1991-01-31	Halbleiterdiode.
DE3751002D1 (de)	1995-03-02	Halbleiterspeicher.
DE3684557D1 (de)	1992-04-30	Waferintegrierte halbleiteranordnung.
DE3683316D1 (de)	1992-02-20	Halbleiteranordnung.
DE3780242D1 (de)	1992-08-13	Halbleiterbeschleunigungsmesser.
DE3786339D1 (de)	1993-07-29	Halbleiterlaservorrichtung.
DE3750995D1 (de)	1995-03-02	Halbleiterlaservorrichtung.
DE3788747D1 (de)	1994-02-24	Halbleiterspeicher.
DE3770953D1 (de)	1991-08-01	Halbleiterspeichervorrichtungen.
DE3667879D1 (de)	1990-02-01	Halbleiteranordnung.
DE3770720D1 (de)	1991-07-18	Halbleiterkamera.
DE3773957D1 (de)	1991-11-28	Halbleitervorrichtung.
DE3680774D1 (de)	1991-09-12	Integriertes halbleiterbauelement.
DE3771238D1 (de)	1991-08-14	Halbleiterspeicher.
DE3778510D1 (de)	1992-05-27	Halbleiterlaser.
DE3789832D1 (de)	1994-06-23	Halbleiterlaser-Vorrichtung.
DE3776186D1 (de)	1992-03-05	Halbleiterlaser-vorrichtung.
DE68922117D1 (de)	1995-05-18	Halbleiterphotodiode.
DE3783507D1 (de)	1993-02-25	Zusammengesetztes halbleiterbauelement.
DE3686753D1 (de)	1992-10-22	Lichtemittierendes halbleiterelement.
DE3581333D1 (de)	1991-02-21	Lichtemittierende halbleitervorrichtung.
DE3787848D1 (de)	1993-11-25	Halbleiterdiode.
DE3784247D1 (de)	1993-03-25	Halbleiter-zusammenbau.
DE3787137D1 (de)	1993-09-30	Halbleiteranordnung.

Legal Events

Date	Code	Title	Description
1994-11-17	8364	No opposition during term of opposition
1995-06-22	8327	Change in the person/name/address of the patent owner	Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL
1999-12-16	8327	Change in the person/name/address of the patent owner	Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N
2004-06-09	8339	Ceased/non-payment of the annual fee