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DE3686242D1 - Entwickelvorrichtung fuer photolacke. - Google Patents

Entwickelvorrichtung fuer photolacke.

Info

Publication number
DE3686242D1
DE3686242D1 DE8686116543T DE3686242T DE3686242D1 DE 3686242 D1 DE3686242 D1 DE 3686242D1 DE 8686116543 T DE8686116543 T DE 8686116543T DE 3686242 T DE3686242 T DE 3686242T DE 3686242 D1 DE3686242 D1 DE 3686242D1
Authority
DE
Germany
Prior art keywords
paints
photo
developing device
developing
photo paints
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686116543T
Other languages
English (en)
Other versions
DE3686242T2 (de
Inventor
Toshitaka Takei
Tsunemasa Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61057733A external-priority patent/JPH0638398B2/ja
Priority claimed from JP61115931A external-priority patent/JPS62276827A/ja
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Publication of DE3686242D1 publication Critical patent/DE3686242D1/de
Application granted granted Critical
Publication of DE3686242T2 publication Critical patent/DE3686242T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE8686116543T 1985-11-28 1986-11-28 Entwickelvorrichtung fuer photolacke. Expired - Fee Related DE3686242T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP26873785 1985-11-28
JP61057733A JPH0638398B2 (ja) 1986-03-14 1986-03-14 レジスト現像装置
JP61115931A JPS62276827A (ja) 1985-11-28 1986-05-20 レジスト現像装置

Publications (2)

Publication Number Publication Date
DE3686242D1 true DE3686242D1 (de) 1992-09-03
DE3686242T2 DE3686242T2 (de) 1993-01-07

Family

ID=27296361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686116543T Expired - Fee Related DE3686242T2 (de) 1985-11-28 1986-11-28 Entwickelvorrichtung fuer photolacke.

Country Status (4)

Country Link
US (1) US4827867A (de)
EP (1) EP0224273B1 (de)
CA (1) CA1277861C (de)
DE (1) DE3686242T2 (de)

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EP0671662B1 (de) * 1994-02-24 1999-01-20 Nec Corporation Entwickelverfahren für Photolacke
JP3250090B2 (ja) * 1995-06-27 2002-01-28 東京エレクトロン株式会社 洗浄処理装置及び洗浄処理方法
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TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
JP3772056B2 (ja) * 1998-10-12 2006-05-10 株式会社東芝 半導体基板の洗浄方法
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US6497239B2 (en) 1999-08-05 2002-12-24 S. C. Fluids, Inc. Inverted pressure vessel with shielded closure mechanism
US6602349B2 (en) 1999-08-05 2003-08-05 S.C. Fluids, Inc. Supercritical fluid cleaning process for precision surfaces
US6334266B1 (en) 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
CA2387373A1 (en) * 1999-11-02 2001-06-28 Tokyo Electron Limited Method and apparatus for supercritical processing of a workpiece
US6415804B1 (en) * 1999-12-23 2002-07-09 Lam Research Corporation Bowl for processing semiconductor wafers
JP2004510321A (ja) * 2000-05-18 2004-04-02 エス．シー．フルーイズ，インコーポレイテッド 精密な表面のための超臨界流体洗浄プロセス
WO2002009147A2 (en) * 2000-07-26 2002-01-31 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
WO2002011911A1 (en) * 2000-08-04 2002-02-14 S. C. Fluids, Inc. Inverted pressure vessel with shielded closure mechanism
JP3511514B2 (ja) * 2001-05-31 2004-03-29 エム・エフエスアイ株式会社 基板浄化処理装置、ディスペンサー、基板保持機構、基板の浄化処理用チャンバー、及びこれらを用いた基板の浄化処理方法
US20040040660A1 (en) * 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
US7001468B1 (en) 2002-02-15 2006-02-21 Tokyo Electron Limited Pressure energized pressure vessel opening and closing device and method of providing therefor
JP2005517884A (ja) * 2002-02-15 2005-06-16 東京エレクトロン株式会社 圧力強化ダイヤフラム弁
US20050227187A1 (en) * 2002-03-04 2005-10-13 Supercritical Systems Inc. Ionic fluid in supercritical fluid for semiconductor processing
US7387868B2 (en) * 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
EP1347496A3 (de) * 2002-03-12 2006-05-03 Dainippon Screen Mfg. Co., Ltd. Vorrichtung und Verfahren zur Substratbehandlung
US6938629B2 (en) * 2002-11-13 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd Rinsing lid for wet bench
US7021635B2 (en) * 2003-02-06 2006-04-04 Tokyo Electron Limited Vacuum chuck utilizing sintered material and method of providing thereof
US7225820B2 (en) * 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7077917B2 (en) * 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7163380B2 (en) * 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US20050035514A1 (en) * 2003-08-11 2005-02-17 Supercritical Systems, Inc. Vacuum chuck apparatus and method for holding a wafer during high pressure processing
US20050034660A1 (en) * 2003-08-11 2005-02-17 Supercritical Systems, Inc. Alignment means for chamber closure to reduce wear on surfaces
US20050067002A1 (en) * 2003-09-25 2005-03-31 Supercritical Systems, Inc. Processing chamber including a circulation loop integrally formed in a chamber housing
US7186093B2 (en) * 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) * 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7445015B2 (en) * 2004-09-30 2008-11-04 Lam Research Corporation Cluster tool process chamber having integrated high pressure and vacuum chambers
US20060065189A1 (en) * 2004-09-30 2006-03-30 Darko Babic Method and system for homogenization of supercritical fluid in a high pressure processing system
US20060065288A1 (en) * 2004-09-30 2006-03-30 Darko Babic Supercritical fluid processing system having a coating on internal members and a method of using
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060130966A1 (en) * 2004-12-20 2006-06-22 Darko Babic Method and system for flowing a supercritical fluid in a high pressure processing system
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US7434590B2 (en) * 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US20060134332A1 (en) * 2004-12-22 2006-06-22 Darko Babic Precompressed coating of internal members in a supercritical fluid processing system
US7140393B2 (en) * 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
JP4727355B2 (ja) * 2005-09-13 2011-07-20 株式会社フジクラ 成膜方法
US20060185694A1 (en) * 2005-02-23 2006-08-24 Richard Brown Rinsing step in supercritical processing
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7767145B2 (en) * 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7380984B2 (en) * 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US20060225772A1 (en) * 2005-03-29 2006-10-12 Jones William D Controlled pressure differential in a high-pressure processing chamber
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
US7494107B2 (en) * 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US20060223899A1 (en) * 2005-03-30 2006-10-05 Hillman Joseph T Removal of porogens and porogen residues using supercritical CO2
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) * 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US20070000519A1 (en) * 2005-06-30 2007-01-04 Gunilla Jacobson Removal of residues for low-k dielectric materials in wafer processing
WO2010030505A1 (en) * 2008-09-10 2010-03-18 Austin American Technology Corporation Cleaning and testing ionic cleanliness of electronic assemblies
CN102472552B (zh) * 2009-08-26 2014-10-22 松下电器产业株式会社 冷藏库

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US3131917A (en) * 1958-09-09 1964-05-05 Gessner Siegfried Device for adjusting the spatial position of articles to be treated in a treatment chamber
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JPS552213A (en) * 1978-06-19 1980-01-09 Chiyou Lsi Gijutsu Kenkyu Kumiai Developing method
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JPS57166032A (en) * 1981-04-03 1982-10-13 Toshiba Corp Spray type developing device for positive resist
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
EP0175882A1 (de) * 1984-09-07 1986-04-02 Contraves Ag Temperiervorrichtung zu einem Laborreaktor

Also Published As

Publication number Publication date
EP0224273A3 (en) 1988-10-05
US4827867A (en) 1989-05-09
EP0224273B1 (de) 1992-07-29
CA1277861C (en) 1990-12-18
DE3686242T2 (de) 1993-01-07
EP0224273A2 (de) 1987-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee