DE3584105D1 - Ionenquelle. - Google Patents
Ionenquelle.Info
- Publication number
- DE3584105D1 DE3584105D1 DE8585101560T DE3584105T DE3584105D1 DE 3584105 D1 DE3584105 D1 DE 3584105D1 DE 8585101560 T DE8585101560 T DE 8585101560T DE 3584105 T DE3584105 T DE 3584105T DE 3584105 D1 DE3584105 D1 DE 3584105D1
- Authority
- DE
- Germany
- Prior art keywords
- ion source
- ion
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59049065A JPH0622107B2 (ja) | 1984-03-16 | 1984-03-16 | イオン源 |
JP59049064A JPS60195853A (ja) | 1984-03-16 | 1984-03-16 | マイクロ波イオン源 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3584105D1 true DE3584105D1 (de) | 1991-10-24 |
Family
ID=26389412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585101560T Expired - Lifetime DE3584105D1 (de) | 1984-03-16 | 1985-02-13 | Ionenquelle. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4658143A (de) |
EP (1) | EP0154824B1 (de) |
KR (1) | KR920003156B1 (de) |
DE (1) | DE3584105D1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0616384B2 (ja) * | 1984-06-11 | 1994-03-02 | 日本電信電話株式会社 | マイクロ波イオン源 |
JP2530434B2 (ja) * | 1986-08-13 | 1996-09-04 | 日本テキサス・インスツルメンツ株式会社 | イオン発生装置 |
YU46728B (sh) * | 1986-10-23 | 1994-04-05 | VUJO dr. MILJEVIĆ | Jonsko-elektronski izvor sa šupljom anodom |
US4797597A (en) * | 1986-12-22 | 1989-01-10 | Bostrom Norman A | Microwave ion source |
EP0360932A1 (de) * | 1988-09-28 | 1990-04-04 | Norman A. Bostrom | Mikrowellen-Ionenquelle |
US5053678A (en) * | 1988-03-16 | 1991-10-01 | Hitachi, Ltd. | Microwave ion source |
US5089746A (en) * | 1989-02-14 | 1992-02-18 | Varian Associates, Inc. | Production of ion beams by chemically enhanced sputtering of solids |
GB2230644B (en) * | 1989-02-16 | 1994-03-23 | Tokyo Electron Ltd | Electron beam excitation ion source |
JP2700280B2 (ja) * | 1991-03-28 | 1998-01-19 | 理化学研究所 | イオンビーム発生装置および成膜装置および成膜方法 |
US5206516A (en) * | 1991-04-29 | 1993-04-27 | International Business Machines Corporation | Low energy, steered ion beam deposition system having high current at low pressure |
US5196706A (en) * | 1991-07-30 | 1993-03-23 | International Business Machines Corporation | Extractor and deceleration lens for ion beam deposition apparatus |
US5523652A (en) * | 1994-09-26 | 1996-06-04 | Eaton Corporation | Microwave energized ion source for ion implantation |
US5914494A (en) * | 1996-03-27 | 1999-06-22 | Thermoceramix, Llc | Arc chamber for an ion implantation system |
US6022258A (en) * | 1996-03-27 | 2000-02-08 | Thermoceramix, Llc | ARC chamber for an ion implantation system |
US5857889A (en) * | 1996-03-27 | 1999-01-12 | Thermoceramix, Llc | Arc Chamber for an ion implantation system |
US6239440B1 (en) | 1996-03-27 | 2001-05-29 | Thermoceramix, L.L.C. | Arc chamber for an ion implantation system |
US6355933B1 (en) * | 1999-01-13 | 2002-03-12 | Advanced Micro Devices, Inc. | Ion source and method for using same |
US6627901B2 (en) | 2001-01-04 | 2003-09-30 | Nec Electronics, Inc. | Apparatus and method for distribution of dopant gases or vapors in an arc chamber for use in an ionization source |
US7122966B2 (en) * | 2004-12-16 | 2006-10-17 | General Electric Company | Ion source apparatus and method |
KR101103410B1 (ko) * | 2009-09-22 | 2012-01-05 | 엑스퍼트(주) | 이온생성챔버 |
TWI466179B (zh) | 2010-02-26 | 2014-12-21 | Advanced Tech Materials | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
US8779383B2 (en) | 2010-02-26 | 2014-07-15 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
US8686379B1 (en) | 2010-09-07 | 2014-04-01 | Joseph C. Robinson | Method and apparatus for preparing serial planar cross sections |
US8878147B2 (en) | 2010-09-07 | 2014-11-04 | Joseph C. Robinson | Method and apparatus for in situ preparation of serial planar surfaces for microscopy |
JP2016534560A (ja) | 2013-08-16 | 2016-11-04 | インテグリス・インコーポレーテッド | 基板へのシリコン注入およびそのためのシリコン前駆体組成物の提供 |
US11768176B2 (en) | 2022-01-06 | 2023-09-26 | Mks Instruments, Inc. | Ion source with gas delivery for high-fidelity analysis |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2408829C2 (de) * | 1974-02-23 | 1984-03-22 | Ibm Deutschland Gmbh, 7000 Stuttgart | Bor-Ionenquell-Material und Verfahren zu seiner Herstellung |
US4058748A (en) * | 1976-05-13 | 1977-11-15 | Hitachi, Ltd. | Microwave discharge ion source |
US4175234A (en) * | 1977-08-05 | 1979-11-20 | University Of Virginia | Apparatus for producing ions of thermally labile or nonvolatile solids |
US4139772A (en) * | 1977-08-08 | 1979-02-13 | Western Electric Co., Inc. | Plasma discharge ion source |
JPS5852297B2 (ja) * | 1979-06-04 | 1983-11-21 | 株式会社日立製作所 | マイクロ波イオン源 |
US4318028A (en) * | 1979-07-20 | 1982-03-02 | Phrasor Scientific, Inc. | Ion generator |
US4393333A (en) * | 1979-12-10 | 1983-07-12 | Hitachi, Ltd. | Microwave plasma ion source |
US4447773A (en) * | 1981-06-22 | 1984-05-08 | California Institute Of Technology | Ion beam accelerator system |
JPS5923432A (ja) * | 1982-07-30 | 1984-02-06 | Hitachi Ltd | プラズマイオン源 |
-
1985
- 1985-02-13 EP EP85101560A patent/EP0154824B1/de not_active Expired - Lifetime
- 1985-02-13 DE DE8585101560T patent/DE3584105D1/de not_active Expired - Lifetime
- 1985-02-21 KR KR1019850001084A patent/KR920003156B1/ko not_active IP Right Cessation
- 1985-03-14 US US06/711,824 patent/US4658143A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0154824A2 (de) | 1985-09-18 |
EP0154824B1 (de) | 1991-09-18 |
EP0154824A3 (en) | 1987-04-29 |
US4658143A (en) | 1987-04-14 |
KR850006965A (ko) | 1985-10-25 |
KR920003156B1 (ko) | 1992-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |