DE3881579D1 - Ionenquelle. - Google Patents
Ionenquelle.Info
- Publication number
- DE3881579D1 DE3881579D1 DE8888303598T DE3881579T DE3881579D1 DE 3881579 D1 DE3881579 D1 DE 3881579D1 DE 8888303598 T DE8888303598 T DE 8888303598T DE 3881579 T DE3881579 T DE 3881579T DE 3881579 D1 DE3881579 D1 DE 3881579D1
- Authority
- DE
- Germany
- Prior art keywords
- ion source
- ion
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/049,759 US4760262A (en) | 1987-05-12 | 1987-05-12 | Ion source |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3881579D1 true DE3881579D1 (de) | 1993-07-15 |
DE3881579T2 DE3881579T2 (de) | 1993-09-23 |
Family
ID=21961563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888303598T Expired - Fee Related DE3881579T2 (de) | 1987-05-12 | 1988-04-21 | Ionenquelle. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4760262A (de) |
EP (1) | EP0291185B1 (de) |
JP (1) | JP2724464B2 (de) |
CN (1) | CN1017102B (de) |
DE (1) | DE3881579T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8820359D0 (en) * | 1988-08-26 | 1988-09-28 | Atomic Energy Authority Uk | Charged particle grid |
US5105123A (en) * | 1988-10-27 | 1992-04-14 | Battelle Memorial Institute | Hollow electrode plasma excitation source |
US4891525A (en) | 1988-11-14 | 1990-01-02 | Eaton Corporation | SKM ion source |
US5162699A (en) * | 1991-10-11 | 1992-11-10 | Genus, Inc. | Ion source |
US5523646A (en) * | 1994-08-17 | 1996-06-04 | Tucciarone; John F. | An arc chamber assembly for use in an ionization source |
JP3268180B2 (ja) * | 1994-11-18 | 2002-03-25 | 株式会社東芝 | イオン発生装置、イオン照射装置、及び半導体装置の製造方法 |
US5576600A (en) * | 1994-12-23 | 1996-11-19 | Dynatenn, Inc. | Broad high current ion source |
US6037587A (en) * | 1997-10-17 | 2000-03-14 | Hewlett-Packard Company | Chemical ionization source for mass spectrometry |
US6271529B1 (en) | 1997-12-01 | 2001-08-07 | Ebara Corporation | Ion implantation with charge neutralization |
US6084241A (en) * | 1998-06-01 | 2000-07-04 | Motorola, Inc. | Method of manufacturing semiconductor devices and apparatus therefor |
AUPP479298A0 (en) * | 1998-07-21 | 1998-08-13 | Sainty, Wayne | Ion source |
US6630774B2 (en) * | 2001-03-21 | 2003-10-07 | Advanced Electron Beams, Inc. | Electron beam emitter |
US7804076B2 (en) * | 2006-05-10 | 2010-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Insulator for high current ion implanters |
US9691584B1 (en) * | 2016-06-30 | 2017-06-27 | Varian Semiconductor Equipment Associates, Inc. | Ion source for enhanced ionization |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB916703A (en) * | 1960-05-18 | 1963-01-23 | Atomic Energy Authority Uk | Improvements in or relating to ion sources |
US4139772A (en) * | 1977-08-08 | 1979-02-13 | Western Electric Co., Inc. | Plasma discharge ion source |
DE2855864A1 (de) * | 1978-12-22 | 1980-07-10 | Ibm Deutschland | Ionenquelle, insbesondere fuer ionenimplantationsanlagen |
JPS59160941A (ja) * | 1984-02-17 | 1984-09-11 | Hitachi Ltd | イオン源 |
US4608513A (en) * | 1984-09-13 | 1986-08-26 | Varian Associates, Inc. | Dual filament ion source with improved beam characteristics |
JPS61142645A (ja) * | 1984-12-17 | 1986-06-30 | Hitachi Ltd | 正,負兼用イオン源 |
JPH06258546A (ja) * | 1993-03-09 | 1994-09-16 | Hitachi Ltd | 光分配素子、光分配回路及び分配回路構成方法 |
-
1987
- 1987-05-12 US US07/049,759 patent/US4760262A/en not_active Expired - Lifetime
-
1988
- 1988-04-21 EP EP88303598A patent/EP0291185B1/de not_active Expired - Lifetime
- 1988-04-21 DE DE8888303598T patent/DE3881579T2/de not_active Expired - Fee Related
- 1988-05-10 JP JP63113417A patent/JP2724464B2/ja not_active Expired - Fee Related
- 1988-05-11 CN CN88102716A patent/CN1017102B/zh not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0291185A3 (en) | 1989-12-06 |
CN1017102B (zh) | 1992-06-17 |
JPS63308854A (ja) | 1988-12-16 |
EP0291185B1 (de) | 1993-06-09 |
DE3881579T2 (de) | 1993-09-23 |
JP2724464B2 (ja) | 1998-03-09 |
US4760262A (en) | 1988-07-26 |
EP0291185A2 (de) | 1988-11-17 |
CN1030327A (zh) | 1989-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AXCELIS TECHNOLOGIES, INC., BEVERLY, MASS., US |
|
8339 | Ceased/non-payment of the annual fee |