DE2819114C3 - Ionenimplantationsanordnung mit Steuerung des Auffangscheiben-Oberflächenpotentials - Google Patents
Ionenimplantationsanordnung mit Steuerung des Auffangscheiben-OberflächenpotentialsInfo
- Publication number
- DE2819114C3 DE2819114C3 DE2819114A DE2819114A DE2819114C3 DE 2819114 C3 DE2819114 C3 DE 2819114C3 DE 2819114 A DE2819114 A DE 2819114A DE 2819114 A DE2819114 A DE 2819114A DE 2819114 C3 DE2819114 C3 DE 2819114C3
- Authority
- DE
- Germany
- Prior art keywords
- arrangement according
- faraday cage
- ion beam
- walls
- collecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 title description 19
- 238000010884 ion-beam technique Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 17
- 229910052785 arsenic Inorganic materials 0.000 description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 238000002513 implantation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 231100000572 poisoning Toxicity 0.000 description 2
- 230000000607 poisoning effect Effects 0.000 description 2
- -1 arsenic ions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004980 dosimetry Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003197 gene knockdown Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24405—Faraday cages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/794,276 US4135097A (en) | 1977-05-05 | 1977-05-05 | Ion implantation apparatus for controlling the surface potential of a target surface |
| US05/794,275 US4118630A (en) | 1977-05-05 | 1977-05-05 | Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2819114A1 DE2819114A1 (de) | 1978-11-16 |
| DE2819114B2 DE2819114B2 (de) | 1981-07-16 |
| DE2819114C3 true DE2819114C3 (de) | 1982-03-04 |
Family
ID=27121491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2819114A Expired DE2819114C3 (de) | 1977-05-05 | 1978-04-29 | Ionenimplantationsanordnung mit Steuerung des Auffangscheiben-Oberflächenpotentials |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE2819114C3 (it) |
| FR (1) | FR2389998B1 (it) |
| GB (1) | GB1584224A (it) |
| IT (1) | IT1112625B (it) |
| NL (1) | NL7804691A (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2490873A1 (fr) * | 1980-09-24 | 1982-03-26 | Varian Associates | Procede et dispositif destines a produire une neutralisation amelioree d'un faisceau d'ions positifs |
| FR2793951B1 (fr) * | 1999-05-21 | 2001-08-17 | Centre Nat Etd Spatiales | Procede et installation de traitement d'un substrat tel qu'un circuit integre par un faisceau focalise de particules electriquement neutres |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2890342A (en) * | 1954-09-29 | 1959-06-09 | Gen Electric | System for charge neutralization |
| US3313969A (en) * | 1966-03-25 | 1967-04-11 | Boeing Co | Charged particle deflecting apparatus having hemispherical electrodes |
| US3507709A (en) * | 1967-09-15 | 1970-04-21 | Hughes Aircraft Co | Method of irradiating dielectriccoated semiconductor bodies with low energy electrons |
| US3997846A (en) * | 1975-06-30 | 1976-12-14 | International Business Machines Corporation | Method and apparatus for electrostatic deflection of high current ion beams in scanning apparatus |
| US4011449A (en) * | 1975-11-05 | 1977-03-08 | Ibm Corporation | Apparatus for measuring the beam current of charged particle beam |
| US4013891A (en) * | 1975-12-15 | 1977-03-22 | Ibm Corporation | Method for varying the diameter of a beam of charged particles |
-
1978
- 1978-03-23 FR FR7809182A patent/FR2389998B1/fr not_active Expired
- 1978-04-07 GB GB13696/78A patent/GB1584224A/en not_active Expired
- 1978-04-28 IT IT22795/78A patent/IT1112625B/it active
- 1978-04-29 DE DE2819114A patent/DE2819114C3/de not_active Expired
- 1978-05-02 NL NL7804691A patent/NL7804691A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2819114B2 (de) | 1981-07-16 |
| FR2389998B1 (it) | 1981-11-20 |
| IT7822795A0 (it) | 1978-04-28 |
| NL7804691A (nl) | 1978-11-07 |
| IT1112625B (it) | 1986-01-20 |
| GB1584224A (en) | 1981-02-11 |
| DE2819114A1 (de) | 1978-11-16 |
| FR2389998A1 (it) | 1978-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |