DE19625622A1 - Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement - Google Patents
Lichtabstrahlendes Halbleiterbauelement mit LumineszenzkonversionselementInfo
- Publication number
- DE19625622A1 DE19625622A1 DE19625622A DE19625622A DE19625622A1 DE 19625622 A1 DE19625622 A1 DE 19625622A1 DE 19625622 A DE19625622 A DE 19625622A DE 19625622 A DE19625622 A DE 19625622A DE 19625622 A1 DE19625622 A1 DE 19625622A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- luminescence conversion
- radiation
- conversion element
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 238000004020 luminiscence type Methods 0.000 claims abstract description 94
- 238000006243 chemical reaction Methods 0.000 claims abstract description 84
- 230000005855 radiation Effects 0.000 claims abstract description 49
- 230000003595 spectral effect Effects 0.000 claims abstract description 16
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 3
- 239000000975 dye Substances 0.000 claims description 32
- 229920003023 plastic Polymers 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 239000004033 plastic Substances 0.000 claims description 11
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000000149 argon plasma sintering Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 3
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 238000000295 emission spectrum Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 239000004922 lacquer Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012815 thermoplastic material Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 108010047357 Luminescent Proteins Proteins 0.000 description 1
- 102000006830 Luminescent Proteins Human genes 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229940000425 combination drug Drugs 0.000 description 1
- 238000007739 conversion coating Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000012764 mineral filler Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Device Packages (AREA)
Priority Applications (67)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19625622A DE19625622A1 (de) | 1996-06-26 | 1996-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
BRPI9715293A BRPI9715293B1 (pt) | 1996-06-26 | 1997-06-26 | elemento de cobertura para um elemento de construção optoeletrônico |
EP10184975.0A EP2270877B1 (de) | 1996-06-26 | 1997-06-26 | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE29724848U DE29724848U1 (de) | 1996-06-26 | 1997-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
CNB2006101016572A CN100502066C (zh) | 1996-06-26 | 1997-06-26 | 具有发光变换元件的发光半导体器件 |
EP04009018.5A EP1441397B1 (de) | 1996-06-26 | 1997-06-26 | Strahlungskonvertierendes Abdeckelement für ein Licht abstrahlendes Halbleiterbauelement, Verfahren zu dessen Herstellung und Licht abstrahlendes halbleiterbauelement |
KR1020047019070A KR100702740B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
CN2003101181788A CN1534802B (zh) | 1996-06-26 | 1997-06-26 | 具有发光变换元件的发光半导体器件 |
EP04009017A EP1441396B1 (de) | 1996-06-26 | 1997-06-26 | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP50211798A JP3773541B2 (ja) | 1996-06-26 | 1997-06-26 | ルミネセンス変換エレメントを有する半導体発光素子 |
KR20047019071A KR20040111701A (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019069A KR100734122B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
CNB2006100999800A CN100514684C (zh) | 1996-06-26 | 1997-06-26 | 发光半导体器件和含有该发光半导体器件的装置 |
KR1020047019068A KR100662955B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
CNB2006101016500A CN100435369C (zh) | 1996-06-26 | 1997-06-26 | 具有发光变换元件的发光半导体器件 |
DE29724847U DE29724847U1 (de) | 1996-06-26 | 1997-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
EP10184358.9A EP2267801B1 (de) | 1996-06-26 | 1997-06-26 | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
CN200610101629.0A CN1893136B (zh) | 1996-06-26 | 1997-06-26 | 发光半导体器件和含有该发光半导体器件的装置 |
CNB2005100917295A CN100442555C (zh) | 1996-06-26 | 1997-06-26 | 发射射线的半导体器件及包含该半导体器件的装置 |
CNB2005100917308A CN100433382C (zh) | 1996-06-26 | 1997-06-26 | 半导体器件外壳用的单独覆盖元件和含有覆盖元件的装置 |
KR1020047019066A KR100662956B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
CNB2006100999783A CN100557833C (zh) | 1996-06-26 | 1997-06-26 | 发光半导体器件和含有该发光半导体器件的装置 |
KR1020047019067A KR100643442B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
CN200610101860XA CN1917240B (zh) | 1996-06-26 | 1997-06-26 | 具有发光变换元件的发光半导体器件 |
EP04008349A EP1434279B1 (de) | 1996-06-26 | 1997-06-26 | Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE59711671T DE59711671D1 (de) | 1996-06-26 | 1997-06-26 | Lichtabstrahlendes halbleiterbauelement mit lumineszenzkonversionselement |
KR1020067012235A KR100751692B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
EP10184425.6A EP2284912B1 (de) | 1996-06-26 | 1997-06-26 | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
HK00101386.0A HK1022564B (zh) | 1996-06-26 | 1997-06-26 | 發光半導體器件、全色發光二極管顯示裝置及其應用 |
KR1020057009021A KR20050053798A (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1019980710985A KR100537349B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
DE29724543U DE29724543U1 (de) | 1996-06-26 | 1997-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
KR1020057009020A KR100629544B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
CN2003101181792A CN1534803B (zh) | 1996-06-26 | 1997-06-26 | 具有发光变换元件的发光半导体器件 |
PCT/DE1997/001337 WO1997050132A1 (de) | 1996-06-26 | 1997-06-26 | Lichtabstrahlendes halbleiterbauelement mit lumineszenzkonversionselement |
CNB2005100917280A CN100565945C (zh) | 1996-06-26 | 1997-06-26 | 发射射线的半导体芯片及包含该半导体芯片的装置 |
EP10184980.0A EP2282354B1 (de) | 1996-06-26 | 1997-06-26 | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
EP08163321.6A EP1993152B1 (de) | 1996-06-26 | 1997-06-26 | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE29724582U DE29724582U1 (de) | 1996-06-26 | 1997-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
KR1020067012234A KR100808749B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
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CNB971974020A CN1264228C (zh) | 1996-06-26 | 1997-06-26 | 发光半导体器件、全色发光二极管显示装置及其应用 |
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JP2003355316A JP4280598B2 (ja) | 1996-06-26 | 2003-10-15 | 発光半導体チップ |
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US11/080,786 US7126162B2 (en) | 1996-06-26 | 2005-03-15 | Light-radiating semiconductor component with a luminescence conversion element |
JP2005112811A JP4001893B2 (ja) | 1996-06-26 | 2005-04-08 | 半導体発光素子 |
JP2005112809A JP4334497B2 (ja) | 1996-06-26 | 2005-04-08 | 半導体発光素子 |
JP2005112810A JP4001892B2 (ja) | 1996-06-26 | 2005-04-08 | 半導体発光素子、led表示装置、照明装置および液晶表示部の照明装置 |
US11/150,916 US7345317B2 (en) | 1996-06-26 | 2005-06-13 | Light-radiating semiconductor component with a luminescene conversion element |
JP2006268658A JP4388940B2 (ja) | 1996-06-26 | 2006-09-29 | 発光半導体チップ |
US11/828,450 US7629621B2 (en) | 1996-06-26 | 2007-07-26 | Light-radiating semiconductor component with a luminescence conversion element |
JP2007264556A JP5260018B2 (ja) | 1996-06-26 | 2007-10-10 | 半導体素子 |
JP2008289894A JP5630952B6 (ja) | 1996-09-20 | 2008-11-12 | 半導体発光素子 |
US12/610,560 US9196800B2 (en) | 1996-06-26 | 2009-11-02 | Light-radiating semiconductor component with a luminescence conversion element |
US13/462,952 US20120241779A1 (en) | 1996-06-26 | 2012-05-03 | Light-Radiating Semiconductor Component with a Luminescence Conversion Element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE19625622A DE19625622A1 (de) | 1996-06-26 | 1996-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
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DE19625622A1 true DE19625622A1 (de) | 1998-01-02 |
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DE19625622A Ceased DE19625622A1 (de) | 1996-06-26 | 1996-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
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DE (1) | DE19625622A1 (zh) |
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CN1722485A (zh) | 2006-01-18 |
CN100557833C (zh) | 2009-11-04 |
CN1881637A (zh) | 2006-12-20 |
CN1722486A (zh) | 2006-01-18 |
CN1905226A (zh) | 2007-01-31 |
CN1983651A (zh) | 2007-06-20 |
CN1917240B (zh) | 2012-05-23 |
CN1893136A (zh) | 2007-01-10 |
CN1917240A (zh) | 2007-02-21 |
CN100565945C (zh) | 2009-12-02 |
CN1738067A (zh) | 2006-02-22 |
CN100514684C (zh) | 2009-07-15 |
CN100433382C (zh) | 2008-11-12 |
CN1913183A (zh) | 2007-02-14 |
CN100442555C (zh) | 2008-12-10 |
CN100435369C (zh) | 2008-11-19 |
CN100502066C (zh) | 2009-06-17 |
CN1893136B (zh) | 2014-03-12 |
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