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DE1291322B - Method for growing a semiconductor crystal having zones of different doping - Google Patents

Method for growing a semiconductor crystal having zones of different doping

Info

Publication number
DE1291322B
DE1291322B DE1954S0038171 DES0038171A DE1291322B DE 1291322 B DE1291322 B DE 1291322B DE 1954S0038171 DE1954S0038171 DE 1954S0038171 DE S0038171 A DES0038171 A DE S0038171A DE 1291322 B DE1291322 B DE 1291322B
Authority
DE
Germany
Prior art keywords
melt
doping
semiconductor crystal
oxidizing gas
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1954S0038171
Other languages
German (de)
Inventor
Dorendorf
Dipl-Phys Dr Heinz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE1954S0038171 priority Critical patent/DE1291322B/en
Publication of DE1291322B publication Critical patent/DE1291322B/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

Beim Ziehen von Halbleiterkristallen, beispielsweise aus Germanium, Silicium oder Verbindungen von Elementen der IM und V. Gruppe des Periodischen Systems, ist es bekannt, den Schmelzvorgang in einer Atmosphäre vorzunehmen, die sich nach der jeweiligen chemischen Beschaffenheit der Halbleiterschmelze richtet. Deshalb ist in den meisten Fällen die Verwendung einer neutralen Atmosphäre, beispielsweise aus Helium, üblich. Daneben kann auch eine reduzierend wirkende Atmosphäre, beispielsweise aus Wasserstoff, verwendet werden, wobei auch dem reduzierenden Gas Wasserdampf zugesetzt sein kann. Durch diesen Zusatz wird der spezifische Widerstand des aus der Schmelze kristallisierenden Halbleitermaterials beeinftußt.When pulling semiconductor crystals, for example from germanium, Silicon or compounds of elements of IM and V group of the periodic table, it is known to carry out the melting process in an atmosphere that is after depending on the chemical nature of the semiconductor melt. That's why is in most cases the use of a neutral atmosphere, for example made of helium, common. In addition, a reducing atmosphere, for example from hydrogen, can be used, the reducing gas also being water vapor can be added. With this addition, the specific resistance of the the melt of crystallizing semiconductor material influenced.

Die Erfindung bezieht sich auf ein Verfahren zum Ziehen eines Zonen unterschiedlicher Dotierung, insbesondere unterschiedlichen Leitungstyps, aufweisenden Halbleiterkristalls aus Germanium, Silicium oder AniBv-Verbindungen aus einer wechselnde Dotierung aufweisenden Schmelze des Halbleiters unter Anwendung eines oxydierenden Gasstroms. Dieses Verfahren ist gemäß der Erfindung dadurch gekennzeichnet, daß jeweils vor dem Wechsel der Dotierung der oxydierende Gasstrom derart durch die Schmelze hindurchgeleitet wird, daß die in der Schmelze vorhandene Dotierung mindestens teilweise unwirksam wird. Zweckmäßig wird während des Durchleitens des Gases durch die Schmelze diese gerührt. Als oxydierendes Gas empfiehlt sich die Verwendung mindestens eines der Stoffe Sauerstoff, Wasserdampf oder Kohlendioxyd.The invention relates to a method for drawing a zone having different doping, in particular different conductivity types Semiconductor crystal made of germanium, silicon or AniBv compounds from an alternating Doping-containing melt of the semiconductor using an oxidizing Gas flow. This method is characterized according to the invention in that in each case before the change in doping, the oxidizing gas flow through the Melt is passed through that the doping present in the melt at least becomes partially ineffective. It is useful while the gas is being passed through the melt stirred this. As an oxidizing gas, it is recommended to use at least one of the substances oxygen, water vapor or carbon dioxide.

Durch Anwendung des erfindungsgemäßen Verfahrens vor jedem Dotierungswechsel wird somit die vorher vorhandene Dotierung der Schmelze auf ein unschädliches Maß herabgesetzt bzw. vollkommen beseitigt, so daß die - z. B. beim Wechseln des Leitungstyps - erforderliche überdotierung der Schmelze vermieden wird. Aus diesem Grund werden durch das erfindungsgemäße Verfahren Halbleiterkristalle erzeugt, die weniger Störstoffe und damit auch weniger Kristallfehler enthalten als Halbleiterkristalle, die in konventioneller Weise unter Umdotierung der Schmelze hergestellt werden. Implizit werden außerdem Verunreinigungen erfaßt, die unabsichtlich in die Schmelze gelangt sind.By using the method according to the invention before each change of doping the previously existing doping of the melt is thus reduced to a harmless level reduced or completely eliminated, so that the - z. B. when changing the line type - required overdoping of the melt is avoided. Because of this will be the method according to the invention produces semiconductor crystals which have fewer contaminants and thus also contain fewer crystal defects than semiconductor crystals, which are in be produced conventionally with redoping of the melt. Implicitly it also detects impurities that unintentionally get into the melt are.

In der Zeichnung ist eine Anordnung zur Ausübung der Erfindung beispielsweise dargestellt. In einem Schmelztiegel 1 aus Graphit befindet sich flüssiges vorgereinigtes Germanium. Mittels eines in einer Halterung 4 befestigten Impfkristalls wird der Germaniumkristall 3 aus der Schmelze in an sich bekannter Weise in Richtung des Pfeiles 5 nach oben gezogen. Der Kristall wird in üblicher Weise im Sinne des Pfeiles 6 gedreht. über den Zuführungskanal ? wird die Dotierung der Schmelze vorgenommen. Vor jedem Wechsel der Dotierung der Schmelze wird die alte Dotierung der Schmelze mindestens teilweise unschädlich gemacht, indem durch die im Tiegelboden vorgesehenen Kanäle 10 ein schwach oydierendes Gasgemisch aus Wasserstoff und Wasserdampf und/oder Kohlenoxyd oder Kohlendioxyd in die Schmelze 2 eingeleitet wird. Der Zufluß des aus einem Vorratsbehälter 9 stammenden Gases wird durch einen Hahn 8 geregelt. Die in dem Behandlungsgefäß 13 während des eigentlichen Ziehvorgangs aufrechtzuerhaltende, beispielsweise aus Wasserstoff bestehende Atmosphäre wird durch den Behälter 11 geliefert und über den Hahn 12 geregelt. Die während des Einsatzes der oxydierenden Atmosphäre aus den Kanälen 10 erzielte Beseitigung der alten Dotierung der Schmelze 2 wird durch Rühren der Schmelze unterstützt. Die in der Zeichnung nicht dargestellten, zum Rühren der Schmelze erforderlichen Mittel können in bekannter Weise auch während des Ziehens des Kristalls 3, z. B. in Abhängigkeit von dem jeweiligen Dotierungsgehalt der Schmelze oder der Ziehgeschwindigkeit, eingesetzt werden.The drawing shows an arrangement for practicing the invention, for example. In a melting crucible 1 made of graphite there is liquid, pre-cleaned germanium. By means of a seed crystal fastened in a holder 4 , the germanium crystal 3 is pulled upwards from the melt in a manner known per se in the direction of the arrow 5. The crystal is rotated in the usual way in the direction of arrow 6. via the feed channel? the melt is doped. Before each change in the doping of the melt, the old doping of the melt is at least partially rendered harmless by introducing a weakly oxidizing gas mixture of hydrogen and water vapor and / or carbon oxide or carbon dioxide into the melt 2 through the channels 10 provided in the crucible bottom. The inflow of the gas coming from a storage container 9 is regulated by a cock 8. The atmosphere to be maintained in the treatment vessel 13 during the actual drawing process, for example consisting of hydrogen, is supplied through the container 11 and regulated via the tap 12. The removal of the old doping of the melt 2 achieved during the use of the oxidizing atmosphere from the channels 10 is supported by stirring the melt. The means required for stirring the melt, not shown in the drawing, can also be used in a known manner during the pulling of the crystal 3, e.g. B. can be used depending on the respective doping content of the melt or the drawing speed.

Claims (3)

Patentanspräche: 1. Verfahren zum Ziehen eines Zonen- unterschiedlicher Dotierung, insbesondere unterschiedlichen Leitungstyps, aufweisenden Halbleiterkristalls aus Germanium, Silicium oder A" ,By-Verbindungen aus einer wechselnde Dotierung aufweisenden Schmelze des Halbleiters unter Anwendung eines oxydierenden Gasstromes, d a -durch gekennzeichnet, daß jeweils vor dem Wechsel der Dotierung der oxydierende Gasstrom derart durch die Schmelze hindurchgeleitet wird, daß die in der Schmelze vorhandene Dotierung mindestens teilweise unwirksam wird. Claims: 1. Method for drawing a zone-different Doping, in particular of different conductivity types, having semiconductor crystal from germanium, silicon or A ", By compounds from an alternating doping containing melt of the semiconductor using an oxidizing gas stream, d a -characterized that in each case before the change of doping the oxidizing Gas flow is passed through the melt in such a way that the in the melt existing doping is at least partially ineffective. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß während des Durchleitens des Gases durch die Schmelze die Schmelze gerührt wird. 2. The method according to claim 1, characterized in that during the passage of the gas through the melt the melt is stirred. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß als oxydierendes Gas mindestens einer der Stoffe Sauerstoff, Wasserdampf, Kohlendioxyd verwendet wird.3. The method according to claim 1 or 2, characterized in that that as an oxidizing gas at least one of the substances oxygen, water vapor, carbon dioxide is used.
DE1954S0038171 1954-03-16 1954-03-16 Method for growing a semiconductor crystal having zones of different doping Pending DE1291322B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1954S0038171 DE1291322B (en) 1954-03-16 1954-03-16 Method for growing a semiconductor crystal having zones of different doping

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1954S0038171 DE1291322B (en) 1954-03-16 1954-03-16 Method for growing a semiconductor crystal having zones of different doping

Publications (1)

Publication Number Publication Date
DE1291322B true DE1291322B (en) 1969-03-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE1954S0038171 Pending DE1291322B (en) 1954-03-16 1954-03-16 Method for growing a semiconductor crystal having zones of different doping

Country Status (1)

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DE (1) DE1291322B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111742A (en) * 1976-09-02 1978-09-05 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for producing crucible-drawn silicon rods containing volatile doping agents
DE3109051A1 (en) * 1980-03-10 1982-01-28 Mobil Tyco Solar Energy Corp., Waltham, Mass. METHOD FOR DRAWING A SILICON CRYSTAL BODY FROM A MELTED SILICONE
DE102006062117A1 (en) * 2006-12-22 2008-06-26 Schott Solar Gmbh Process for producing crystallized silicon and crystallized silicon
WO2016142893A1 (en) * 2015-03-10 2016-09-15 Sunedison Semiconductor Limited Liquid doping systems and methods for controlled doping of a melt

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE800015C (en) * 1949-05-14 1950-08-04 Linde Eismasch Ag Method for accelerating freshening in the Siemens-Martin oven
CH282856A (en) * 1948-08-23 1952-05-15 Westinghouse Freins & Signaux Process for treating germanium, intended to give it well-defined semiconductor properties.
CH292927A (en) * 1950-01-13 1953-08-31 Western Electric Co Method and device for producing semiconductor crystals.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH282856A (en) * 1948-08-23 1952-05-15 Westinghouse Freins & Signaux Process for treating germanium, intended to give it well-defined semiconductor properties.
DE800015C (en) * 1949-05-14 1950-08-04 Linde Eismasch Ag Method for accelerating freshening in the Siemens-Martin oven
CH292927A (en) * 1950-01-13 1953-08-31 Western Electric Co Method and device for producing semiconductor crystals.

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111742A (en) * 1976-09-02 1978-09-05 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for producing crucible-drawn silicon rods containing volatile doping agents
DE3109051A1 (en) * 1980-03-10 1982-01-28 Mobil Tyco Solar Energy Corp., Waltham, Mass. METHOD FOR DRAWING A SILICON CRYSTAL BODY FROM A MELTED SILICONE
DE102006062117A1 (en) * 2006-12-22 2008-06-26 Schott Solar Gmbh Process for producing crystallized silicon and crystallized silicon
US7955582B2 (en) 2006-12-22 2011-06-07 Schott Solar Gmbh Method for producing crystallized silicon as well as crystallized silicon
WO2016142893A1 (en) * 2015-03-10 2016-09-15 Sunedison Semiconductor Limited Liquid doping systems and methods for controlled doping of a melt
US10443148B2 (en) 2015-03-10 2019-10-15 Globalwafers Co., Ltd. Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt
US11085127B2 (en) 2015-03-10 2021-08-10 Globalwafers Co., Ltd. Methods of introducing dopant into a melt of semiconductor or solar-grade material via a feed tube
US11346016B2 (en) * 2015-03-10 2022-05-31 Globalwafers Co., Ltd. System for introducing dopant into a melt of semiconductor or solar-grade material via a feed tube

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