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CH282856A - Process for treating germanium, intended to give it well-defined semiconductor properties. - Google Patents

Process for treating germanium, intended to give it well-defined semiconductor properties.

Info

Publication number
CH282856A
CH282856A CH282856DA CH282856A CH 282856 A CH282856 A CH 282856A CH 282856D A CH282856D A CH 282856DA CH 282856 A CH282856 A CH 282856A
Authority
CH
Switzerland
Prior art keywords
give
intended
well
semiconductor properties
defined semiconductor
Prior art date
Application number
Other languages
French (fr)
Inventor
Welker Henri
Original Assignee
Westinghouse Freins & Signaux
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Freins & Signaux filed Critical Westinghouse Freins & Signaux
Publication of CH282856A publication Critical patent/CH282856A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/08Germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH282856D 1948-08-23 1949-07-14 Process for treating germanium, intended to give it well-defined semiconductor properties. CH282856A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR937189X 1948-08-23

Publications (1)

Publication Number Publication Date
CH282856A true CH282856A (en) 1952-05-15

Family

ID=9457770

Family Applications (1)

Application Number Title Priority Date Filing Date
CH282856D CH282856A (en) 1948-08-23 1949-07-14 Process for treating germanium, intended to give it well-defined semiconductor properties.

Country Status (6)

Country Link
BE (1) BE490440A (en)
CH (1) CH282856A (en)
DE (1) DE937189C (en)
FR (1) FR1010469A (en)
GB (1) GB674244A (en)
NL (2) NL142932B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1187803B (en) * 1959-01-23 1965-02-25 Philips Nv Process for purifying germanium
DE1291322B (en) * 1954-03-16 1969-03-27 Siemens Ag Method for growing a semiconductor crystal having zones of different doping

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219233B (en) * 1955-04-18 1966-06-16 Siemens Ag Process for the production of germanium or silicon intended for use in semiconductor arrangements with a defined diffusion length of the charge carriers
DE1084840B (en) * 1957-01-23 1960-07-07 Intermetall Process for the production of spherical semiconductor bodies made of silicon from semiconductor devices, e.g. B. peak rectifiers or peak transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291322B (en) * 1954-03-16 1969-03-27 Siemens Ag Method for growing a semiconductor crystal having zones of different doping
DE1187803B (en) * 1959-01-23 1965-02-25 Philips Nv Process for purifying germanium

Also Published As

Publication number Publication date
NL69164C (en) 1900-01-01
DE937189C (en) 1955-12-29
NL142932B (en)
FR1010469A (en) 1952-06-11
BE490440A (en) 1900-01-01
GB674244A (en) 1952-06-18

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