DE1156174B - Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung - Google Patents
Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter DurchbruchsspannungInfo
- Publication number
- DE1156174B DE1156174B DEJ18915A DEJ0018915A DE1156174B DE 1156174 B DE1156174 B DE 1156174B DE J18915 A DEJ18915 A DE J18915A DE J0018915 A DEJ0018915 A DE J0018915A DE 1156174 B DE1156174 B DE 1156174B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- silicon
- graphite
- heat treatment
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 21
- 230000015556 catabolic process Effects 0.000 title claims description 20
- 230000008569 process Effects 0.000 title description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 13
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000370 acceptor Substances 0.000 claims description 6
- 238000005275 alloying Methods 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229910000676 Si alloy Inorganic materials 0.000 description 7
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- WXNIGGHOYIUIFC-UHFFFAOYSA-N [Si].[Sb].[Au] Chemical compound [Si].[Sb].[Au] WXNIGGHOYIUIFC-UHFFFAOYSA-N 0.000 description 3
- 229960000583 acetic acid Drugs 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR808912A FR1248102A (fr) | 1959-10-30 | 1959-10-30 | Préparation des semi-conducteurs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1156174B true DE1156174B (de) | 1963-10-24 |
Family
ID=8720719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ18915A Pending DE1156174B (de) | 1959-10-30 | 1960-10-25 | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1156174B (fr) |
| FR (1) | FR1248102A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3084079A (en) * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1169409A (fr) * | 1957-03-13 | 1958-12-29 | Labo Cent Telecommunicat | Procédé de fabrication d'éléments semi-conducteurs à jonctions |
| FR1174438A (fr) * | 1956-05-02 | 1959-03-11 | Philips Nv | Procédé de fabrication de corps semi-conducteurs |
| FR1199588A (fr) * | 1957-03-08 | 1959-12-15 | British Thomson Houston Co Ltd | Procédé de préparation de jonction rho-nu |
-
1959
- 1959-10-30 FR FR808912A patent/FR1248102A/fr not_active Expired
-
1960
- 1960-10-25 DE DEJ18915A patent/DE1156174B/de active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1174438A (fr) * | 1956-05-02 | 1959-03-11 | Philips Nv | Procédé de fabrication de corps semi-conducteurs |
| FR1199588A (fr) * | 1957-03-08 | 1959-12-15 | British Thomson Houston Co Ltd | Procédé de préparation de jonction rho-nu |
| FR1169409A (fr) * | 1957-03-13 | 1958-12-29 | Labo Cent Telecommunicat | Procédé de fabrication d'éléments semi-conducteurs à jonctions |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1248102A (fr) | 1960-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE961913C (de) | Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit p-n-UEbergaengen | |
| DE2160427C3 (fr) | ||
| DE1246890B (de) | Diffusionsverfahren zum Herstellen eines Halbleiterbauelements | |
| DE1292256B (de) | Drift-Transistor und Diffusionsverfahren zu seiner Herstellung | |
| DE1032404B (de) | Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten | |
| DE1016841B (de) | Verfahren zur Herstellung eines Halbleiters mit Inversionsschicht | |
| DE1005646B (de) | Verfahren zur Erzeugung von grossflaechigen, rissefreien Halbleiter-p-n-Verbindungen | |
| DE1024640B (de) | Verfahren zur Herstellung von Kristalloden | |
| DE976348C (de) | Verfahren zur Herstellung von Halbleiterbauelementen mit pn-UEbergaengen und nach diesem Verfahren hergestellte Bauelemente | |
| DE1297234B (de) | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleitergleichrichters | |
| DE2735937C2 (de) | Flüssigphasenepitaxie-Verfahren zur Herstellung von Halbleiter-Heterostrukturen | |
| DE2523055A1 (de) | Minoritaetstraeger-trennzonen fuer halbleitervorrichtungen und verfahren zu ihrer herstellung | |
| DE1214790C2 (de) | Leistungsgleichrichter mit einkristallinem Halbleiterkoerper und vier Schichten abwechselnden Leitfaehigkeitstyps | |
| DE2720327A1 (de) | Verfahren zur herstellung von halbleiterbauelementen, insbesondere solarelementen | |
| DE1150456B (de) | Esaki-Diode und Verfahren zu ihrer Herstellung | |
| DE1090770B (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit nahe nebeneinander liegenden aufgeschmolzenen Elektroden | |
| DE1614410A1 (de) | Halbleiterbauelement | |
| DE1156174B (de) | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung | |
| DE1564170C3 (de) | Halbleiterbauelement hoher Schaltgeschwindigkeit und Verfahren zu seiner Herstellung | |
| DE1274245B (de) | Halbleiter-Gleichrichterdiode fuer Starkstrom | |
| DE2738152A1 (de) | Festkoerperbauelement und verfahren zu seiner herstellung | |
| AT202600B (de) | Feldeffekt-Transistor und Verfahren zur Herstellung eines solchen Transistors | |
| DE1116824B (de) | Verfahren zum Herstellen einer elektrischen Halbleiteranordnung mit mindestens einemp-n-UEbergang | |
| DE2811207A1 (de) | Temperaturgradient-zonenschmelzverfahren durch eine oxidschicht | |
| DE1097571B (de) | Flaechentransistor mit drei Zonen abwechselnden Leitfaehigkeitstyps |