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FR1169409A - Procédé de fabrication d'éléments semi-conducteurs à jonctions - Google Patents

Procédé de fabrication d'éléments semi-conducteurs à jonctions

Info

Publication number
FR1169409A
FR1169409A FR1169409DA FR1169409A FR 1169409 A FR1169409 A FR 1169409A FR 1169409D A FR1169409D A FR 1169409DA FR 1169409 A FR1169409 A FR 1169409A
Authority
FR
France
Prior art keywords
junctions
manufacturing process
semiconductor elements
semiconductor
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Charles-Andre Meuleau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoire Central de Telecommunications SA
Original Assignee
Laboratoire Central de Telecommunications SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoire Central de Telecommunications SA filed Critical Laboratoire Central de Telecommunications SA
Application granted granted Critical
Publication of FR1169409A publication Critical patent/FR1169409A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ink Jet (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1169409D 1957-03-13 1957-03-13 Procédé de fabrication d'éléments semi-conducteurs à jonctions Expired FR1169409A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1169409T 1957-03-13

Publications (1)

Publication Number Publication Date
FR1169409A true FR1169409A (fr) 1958-12-29

Family

ID=9656541

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1169409D Expired FR1169409A (fr) 1957-03-13 1957-03-13 Procédé de fabrication d'éléments semi-conducteurs à jonctions

Country Status (2)

Country Link
FR (1) FR1169409A (fr)
GB (1) GB843298A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1156174B (de) * 1959-10-30 1963-10-24 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1156174B (de) * 1959-10-30 1963-10-24 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen verminderter Durchbruchsspannung

Also Published As

Publication number Publication date
GB843298A (en) 1960-08-04

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