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DE10345824A1 - Anordnung zur Abscheidung von atomaren Schichten auf Substraten - Google Patents

Anordnung zur Abscheidung von atomaren Schichten auf Substraten Download PDF

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Publication number
DE10345824A1
DE10345824A1 DE10345824A DE10345824A DE10345824A1 DE 10345824 A1 DE10345824 A1 DE 10345824A1 DE 10345824 A DE10345824 A DE 10345824A DE 10345824 A DE10345824 A DE 10345824A DE 10345824 A1 DE10345824 A1 DE 10345824A1
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DE
Germany
Prior art keywords
source
arrangement
atomic layers
production
connected together
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10345824A
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English (en)
Inventor
Marcel Tognetti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10345824A priority Critical patent/DE10345824A1/de
Priority to US10/954,006 priority patent/US20050126483A1/en
Publication of DE10345824A1 publication Critical patent/DE10345824A1/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft eine Anordnung zur Abscheidung von atomaren Schichten auf Substraten zur Erzeugung sehr dünner Filme in einer evakuierbaren Reaktionskammer, wobei die Substrate bzw. Wafer auf einer Waferaufnahme angeordnet sind und die Reaktionskammer über Ventile mit einer Quelle für TMA, Wasser sowie einem Reinigungsgas verbunden ist. Durch die Erfindung soll eine wesentliche Verbesserung des Beschichtungsprozesses erreicht werden. Erreicht wird das dadurch, dass die Quelle für TMA und die Quelle für Wasser über Einrichtungen zur direkten oder indirekten Einspritzung des TMA und des Wassers in die Reaktionskammer (1) mit dieser verbunden sind. Vorzugsweise bestehen die Einrichtungen zur Einspritzung aus Ventilen Vp1, Vp2, die als Einspritzventile ausgebildet sind.
DE10345824A 2003-09-30 2003-09-30 Anordnung zur Abscheidung von atomaren Schichten auf Substraten Withdrawn DE10345824A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10345824A DE10345824A1 (de) 2003-09-30 2003-09-30 Anordnung zur Abscheidung von atomaren Schichten auf Substraten
US10/954,006 US20050126483A1 (en) 2003-09-30 2004-09-29 Arrangement for depositing atomic layers on substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10345824A DE10345824A1 (de) 2003-09-30 2003-09-30 Anordnung zur Abscheidung von atomaren Schichten auf Substraten

Publications (1)

Publication Number Publication Date
DE10345824A1 true DE10345824A1 (de) 2005-05-04

Family

ID=34399180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10345824A Withdrawn DE10345824A1 (de) 2003-09-30 2003-09-30 Anordnung zur Abscheidung von atomaren Schichten auf Substraten

Country Status (2)

Country Link
US (1) US20050126483A1 (de)
DE (1) DE10345824A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck

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JP4074461B2 (ja) * 2002-02-06 2008-04-09 東京エレクトロン株式会社 成膜方法および成膜装置、半導体装置の製造方法
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
EP1630134A4 (de) * 2003-03-24 2009-08-26 Japan Science & Tech Agency Hocheffizientes syntheseverfahren für kohlenstoffnanostruktur, vorrichtung und kohlenstoffnanostruktur
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US7628861B2 (en) * 2004-12-17 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
FR2900070B1 (fr) 2006-04-19 2008-07-11 Kemstream Soc Par Actions Simp Dispositif d'introduction ou d'injection ou de pulverisation d'un melange de gaz vecteur et de composes liquides et procede de mise en oeuvre dudit dispositif.
FR2900071B1 (fr) * 2006-08-24 2009-02-13 Kemstream Soc Par Actions Simp Dispositif d'introduction ou d'injection ou de pulverisation d'un melange de gaz vecteur et de composes liquides et procede de mise en oeuvre dudit dispositif
US20110256724A1 (en) * 2010-04-15 2011-10-20 Novellus Systems, Inc. Gas and liquid injection methods and apparatus
JP5859586B2 (ja) * 2013-12-27 2016-02-10 株式会社日立国際電気 基板処理システム、半導体装置の製造方法および記録媒体
JP6413293B2 (ja) * 2014-03-27 2018-10-31 東京エレクトロン株式会社 成膜方法及び記憶媒体
TW202200830A (zh) * 2020-02-26 2022-01-01 美商應用材料股份有限公司 用於ald 處理的循序脈衝和淨化
CN113416945B (zh) * 2021-06-24 2022-10-21 北京北方华创微电子装备有限公司 原子层沉积设备的进气装置及原子层沉积设备

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WO2000079019A1 (en) * 1999-06-24 2000-12-28 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
US20020160585A1 (en) * 2001-02-02 2002-10-31 Chang-Boo Park Thin film deposition method
US6521047B1 (en) * 1999-11-08 2003-02-18 Joint Industrial Processors For Electronics Process and apparatus for liquid delivery into a chemical vapor deposition chamber
WO2003016590A2 (de) * 2001-08-01 2003-02-27 Infineon Technologies Ag Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor

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US160585A (en) * 1875-03-09 Improvement in reversible pinions for watches
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Publication number Priority date Publication date Assignee Title
WO2000079019A1 (en) * 1999-06-24 2000-12-28 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
US6521047B1 (en) * 1999-11-08 2003-02-18 Joint Industrial Processors For Electronics Process and apparatus for liquid delivery into a chemical vapor deposition chamber
US20020160585A1 (en) * 2001-02-02 2002-10-31 Chang-Boo Park Thin film deposition method
WO2003016590A2 (de) * 2001-08-01 2003-02-27 Infineon Technologies Ag Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
US11479854B2 (en) 2018-08-23 2022-10-25 Infineon Technologies Ag Apparatus and method of depositing a layer at atmospheric pressure

Also Published As

Publication number Publication date
US20050126483A1 (en) 2005-06-16

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OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8130 Withdrawal