CN2516564Y - On-line joint coating device with intermediate-frequeney reactive sputtering silica for indium oxide tin glass - Google Patents
On-line joint coating device with intermediate-frequeney reactive sputtering silica for indium oxide tin glass Download PDFInfo
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- CN2516564Y CN2516564Y CN01258489.4U CN01258489U CN2516564Y CN 2516564 Y CN2516564 Y CN 2516564Y CN 01258489 U CN01258489 U CN 01258489U CN 2516564 Y CN2516564 Y CN 2516564Y
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- chamber
- intermediate frequency
- sio
- coating chamber
- ito
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- 239000011248 coating agent Substances 0.000 title claims abstract description 52
- 238000000576 coating method Methods 0.000 title claims abstract description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 16
- 238000005546 reactive sputtering Methods 0.000 title claims abstract description 10
- 239000011521 glass Substances 0.000 title claims description 21
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 title claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 229960001866 silicon dioxide Drugs 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 12
- 239000000376 reactant Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000075 oxide glass Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000008676 import Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000009504 vacuum film coating Methods 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
一种具有中频反应溅射二氧化硅的氧化铟锡玻璃在线联镀装置,依顺序连接有前端过渡真空室、中频反应磁控溅射SiO2镀膜室、气体隔离装置、ITO镀膜室和后端过渡真空室,前、后端过渡真空室分别接有扩散泵,气体隔离装置由两个相通的隔离室、分子泵和扩散泵组成,连接中频反应磁控溅射SiO2镀膜室的隔离室接有分子泵,与ITO镀膜室相连的隔离室接有扩散泵,ITO镀膜室接有分子泵。本实用新型通过设置气体隔离装置,巧妙地减少甚至隔离了连通的SiO2镀膜室与ITO镀膜室之间不同气氛的相互影响,实现了二氧化硅(SiO2)膜与氧化铟锡(ITO)膜的在线联镀。通过设置中频双靶反应磁控溅射制备SiO2膜装置,具有制备SiO2膜速率高、成本低等的优点,提高了产品的产量和质量,降低了生产成本。
An indium tin oxide glass online coating device with intermediate frequency reactive sputtering of silicon dioxide, which is connected in sequence with a front-end transitional vacuum chamber, intermediate frequency reactive magnetron sputtering SiO2 coating chamber, gas isolation device, ITO coating chamber and rear end Transitional vacuum chamber, the front and rear transitional vacuum chambers are respectively connected with diffusion pumps, the gas isolation device is composed of two interlinked isolation chambers, a molecular pump and a diffusion pump, and the isolation chamber connected to the intermediate frequency reaction magnetron sputtering SiO 2 coating chamber is connected to There is a molecular pump, the isolation chamber connected with the ITO coating chamber is connected with a diffusion pump, and the ITO coating chamber is connected with a molecular pump. The utility model cleverly reduces or even isolates the mutual influence of different atmospheres between the connected SiO 2 coating chamber and the ITO coating chamber by setting the gas isolation device, and realizes that the silicon dioxide (SiO 2 ) film and the indium tin oxide (ITO) In-line co-plating of membranes. The equipment for preparing SiO 2 film by setting intermediate frequency dual-target reactive magnetron sputtering has the advantages of high speed and low cost for preparing SiO 2 film, which improves the yield and quality of products and reduces production costs.
Description
Technical field
The utility model relates to vacuum coating technology, specifically, is the on-line coating device of a kind of tin indium oxide (ITO) transparent conducting glass.
Background technology
Tin indium oxide (ITO) transparent conducting glass is by ITO (Indium Tin Oxide, tin indium oxide) film, silicon-dioxide (SiO
2) film and ultrathin substrate glass composition.The ITO film is used for liquid-crystal display (LCD) as transparent conductive electrode.SiO
2Film is plated between ITO film and the substrate glass, as the blocking layer, prevents that the alkalimetal ion in the glass is diffused in the ITO film, influences its conductivity.
Industrial production ITO conductive glass generally adopts magnetron sputtering method, though the technology of magnetron sputtering method is ripe relatively, and domestic existing many ITO transparent conducting glass manufacturer.But still there are the following problems: 1, also there is technical difficulty in ultrathin substrate glass production aspect, can not produce, entirely by import; 2, can not be coated with SiO
2Film, or adopt radio-frequency sputtering technology, plated film efficient is low.SiO has been plated in the direct import of most of producers
2The substrate glass of film perhaps prepares SiO with radio-frequency sputtering on the import suite of equipment
2Film, cost improves greatly.And prepare SiO with traditional radio frequency
2There is following deficiency again in film: 1, need to use expensive import SiO
2Target, and sputtering yield is low; 2, radio-frequency sputtering power utilization ratio is low and heating is serious; 3, power supply and matching box price height, easy break-down.Radio-frequency sputtering still is not big area high rate deposition SiO
2The ideal scheme of film.
Use the two target response sputters of intermediate frequency and prepare SiO
2The technology of film has the high characteristics of sedimentation rate, but prepares SiO at reaction magnetocontrol sputtering
2Process in, in order to sputter Si atom and O from the Si target
2Chemical combination need charge into many O
2, O
2/ Ar is about 10%～20%, and in preparation ITO membrane process, only need pour minor amounts of oxygen (O
2), O
2/ A
2Be about 1%-5%.Like this, prepare SiO in the realization response sputter
2When film and the plating of ITO film connection, just run into reactive sputtering SiO
2The reactant gases oxygen of coating chamber might float to the ITO coating chamber, thereby causes the problem to the ITO technogenic influence.
How to reduce SiO
2The production cost of film, and be not only China with the online plating of ITO film, and be the bottleneck difficult problem that faces of ITO industry in the world.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned the deficiencies in the prior art, reduces silicon-dioxide (SiO
2) production cost of film, realization response sputter silicon-dioxide (SiO
2) the online plating of film and tin indium oxide (ITO) film.
Realize the technical scheme of above-mentioned purpose: a kind of online joint coating device of indium oxide tin glass with medium frequency reactive sputtering silicon-dioxide, be docile and obedient preface and be connected with front end transition vacuum chamber, intermediate frequency reaction magnetocontrol sputtering SiO
2Coating chamber, gas barrier device, ITO coating chamber and rear end transition vacuum chamber, front and back ends transition vacuum chamber and ITO coating chamber are connected to off-gas pump respectively, the gas barrier device is made up of insulated chamber and off-gas pump, and insulated chamber connects off-gas pump, and the front end of insulated chamber connects intermediate frequency reaction magnetocontrol sputtering SiO
2Coating chamber, the rear end of insulated chamber connects the ITO coating chamber.
The gas barrier device is made up of two insulated chambers that communicate, molecular pump and diffusion pump, connects intermediate frequency reaction magnetocontrol sputtering SiO
2The insulated chamber of coating chamber is connected to molecular pump, and the insulated chamber that links to each other with the ITO coating chamber connects diffusion pump, and the ITO coating chamber connects molecular pump.
Intermediate frequency reaction magnetocontrol sputtering SiO
2Be provided with the two target reaction magnetocontrol sputterings of intermediate frequency in the coating chamber and prepare SiO
2Film device, the two target reaction magnetocontrol sputterings of intermediate frequency prepare SiO
2Film device comprises two targets, reactant gases steam line, working gas steam line, intermediate frequency power supply, piezo electric valve controller and piezo electric valve, two targets are contained in the shielding case, the indoor reactant gases steam line of vacuum plating is positioned on the symmetrical center line of two targets, two output terminals of intermediate frequency power supply are respectively received on the target, the control line of intermediate frequency power supply connects the piezo electric valve controller, the piezo electric valve on the output control reactant gases steam line of piezo electric valve controller.
Adopt technique scheme, the utility model otherwise effective technique effect is: 1, pass through at silicon-dioxide (SiO
2) two insulated chambers are set between coating chamber and tin indium oxide (ITO) coating chamber, and bleed by molecular pump and diffusion pump, reduce dexterously even isolated the SiO that is communicated with
2The influencing each other of different atmosphere between coating chamber and the ITO coating chamber keeps the working order that requires separately as much as possible, realized silicon-dioxide (SiO
2) the online plating of film and tin indium oxide (ITO) film.2, the two target reaction magnetocontrol sputterings of intermediate frequency are prepared SiO
2Film device is used for the ito glass production unit, utilizes the two target reaction magnetocontrol sputterings of intermediate frequency to prepare SiO
2Film has low etc. the advantage of speed height, cost, has improved the output and the quality of product, has reduced production cost.
Description of drawings
Fig. 1 is a kind of online plating dress of indium oxide tin glass with medium frequency reactive sputtering silicon-dioxide
The structural representation of putting.
Fig. 2 is that the two target reaction magnetocontrol sputterings of a kind of intermediate frequency prepare SiO
2The film device structural representation.
Embodiment
See figures.1.and.2, a kind of online joint coating device of indium oxide tin glass with medium frequency reactive sputtering silicon-dioxide comprises transition vacuum chamber (1,9), SiO
2Coating chamber 3, gas barrier device 4, ITO coating chamber 10, three diffusion pump (2,6,8) and two molecular pumps (5,7), wherein, transition vacuum chamber 1 connects diffusion pump 2 and bleeds, at SiO
2The two target reaction magnetocontrol sputterings of intermediate frequency shown in Figure 2 are set in the coating chamber 3 prepare SiO
2Film device, gas barrier device 4 is made up of insulated chamber (11,12), molecular pump 5 and diffusion pump 6, and insulated chamber 12 connects diffusion pump 5 and bleeds, and insulated chamber 11 connects diffusion pump 6 and bleeds, and what confession ITO coating chamber 10 was bled is molecular pump 7, transition vacuum chamber 9 connects diffusion pump 8 and bleeds.
The two target reaction magnetocontrol sputterings of the intermediate frequency that is provided with in the vacuum film coating chamber 3 prepare SiO
2Film device, comprise two targets 20, intermediate frequency power supply 13, piezo electric valve controller 14, piezo electric valve 15, reactant gases (oxygen) steam line 16, working gas (argon) steam line 17, shielding case 18 and substrate frame 19, reactant gases steam line 26 in vacuum film coating chamber 21 is positioned on the symmetrical center line of two targets 20, oxygen blows on the substrate on the substrate frame 19 uniformly and stably, two targets 20 are contained in the same shielding case 8, two output terminals of intermediate frequency power supply 13 (PEII type) respectively connect a target 20, the control line of intermediate frequency power supply 13 connects piezo electric valve controller 14 (PCU-01 process control unit), the opening degree of piezo electric valve 5 on piezo electric valve controller 14 control reactant gases (oxygen) steam lines 16.Working process: the substrate frame that is loaded with substrate glass enters coating chamber 3 by former process through transition chamber 1, in coating chamber 3, prepares SiO through the two target reaction magnetocontrol sputterings of intermediate frequency
2Film device plates the thick SiO of 20-30nm at its glass substrate surface
2Film.When accidental cause influences the working order of target 20, the voltage and current of target 20 changes, this variation detects and is sent to piezo electric valve controller 14 by intermediate frequency power supply 13, piezo electric valve controller 14 is through amplifying and phase identification, adjust the operating voltage of piezo electric valve 15, change oxygen flow, make target 2 return to original working order, realize closed-loop control.SiO
2Behind the plated film, enter ITO coating chamber 10, in ITO coating chamber 10, be coated with SiO through gas barrier chamber 4
2Above the substrate glass of film, plate the ITO nesa coating of one deck 25nm left and right thickness again, enter following chamber through transition chamber 9 at last.
The utility model has been isolated SiO by gas barrier chamber 4
2The influencing each other of different process atmosphere between coating chamber 3 and the ITO coating chamber 10, the two target reaction magnetocontrol sputterings of intermediate frequency prepare SiO
2Film has low etc. the advantage of speed height, cost, has improved the output and the quality of product, has reduced production cost.
Claims (3)
1, a kind of online joint coating device of indium oxide tin glass with medium frequency reactive sputtering silicon-dioxide, comprise front end transition vacuum chamber, ITO coating chamber and rear end transition vacuum chamber, front and back ends transition vacuum chamber, ITO coating chamber are connected to off-gas pump respectively, it is characterized in that: be provided with intermediate frequency reaction magnetocontrol sputtering SiO between front end transition vacuum chamber and ITO coating chamber
2Coating chamber and gas disrupter, the gas barrier device is made up of insulated chamber and off-gas pump, and insulated chamber connects off-gas pump, and the front end of insulated chamber connects intermediate frequency reaction magnetocontrol sputtering SiO
2Coating chamber, the rear end of insulated chamber connects the ITO coating chamber.
2, according to the described online joint coating device of indium oxide tin glass with medium frequency reactive sputtering silicon-dioxide of claim 1, it is characterized in that: the gas barrier device is made up of two insulated chambers that communicate, molecular pump and diffusion pump, connects intermediate frequency reaction magnetocontrol sputtering SiO
2The insulated chamber of coating chamber is connected to molecular pump, and the insulated chamber that links to each other with the ITO coating chamber connects diffusion pump, and the ITO coating chamber connects molecular pump.
3, according to the described online joint coating device of indium oxide tin glass of claim 1, it is characterized in that: intermediate frequency reaction magnetocontrol sputtering SiO with medium frequency reactive sputtering silicon-dioxide
2Be provided with the two target reaction magnetocontrol sputterings of intermediate frequency in the coating chamber and prepare SiO
2Film device, the two target reaction magnetocontrol sputterings of intermediate frequency prepare SiO
2Film device comprises two targets, reactant gases steam line, working gas steam line, intermediate frequency power supply, piezo electric valve controller and piezo electric valve, two targets are contained in the shielding case, the indoor reactant gases steam line of vacuum plating is positioned on the symmetrical center line of two targets, two output terminals of intermediate frequency power supply are respectively received on the target, the control line of intermediate frequency power supply connects the piezo electric valve controller, the piezo electric valve on the output control reactant gases steam line of piezo electric valve controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01258489.4U CN2516564Y (en) | 2001-12-03 | 2001-12-03 | On-line joint coating device with intermediate-frequeney reactive sputtering silica for indium oxide tin glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01258489.4U CN2516564Y (en) | 2001-12-03 | 2001-12-03 | On-line joint coating device with intermediate-frequeney reactive sputtering silica for indium oxide tin glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2516564Y true CN2516564Y (en) | 2002-10-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01258489.4U Expired - Fee Related CN2516564Y (en) | 2001-12-03 | 2001-12-03 | On-line joint coating device with intermediate-frequeney reactive sputtering silica for indium oxide tin glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2516564Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100441066C (en) * | 2004-12-24 | 2008-12-03 | 许廷格电子有限及两合公司 | Plasma excitation system and large surface plasma coating system |
| CN101880131A (en) * | 2010-06-09 | 2010-11-10 | 深圳市力合薄膜科技有限公司 | Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter |
| US7977255B1 (en) | 2010-09-10 | 2011-07-12 | Applied Materials, Inc. | Method and system for depositing a thin-film transistor |
| CN102485947A (en) * | 2010-12-06 | 2012-06-06 | 杭州韩世通信电子有限公司 | Control system of oxygen content of sputtering target surface, probe and method for producing PET plate coated with ITO film |
| CN103663996A (en) * | 2013-11-20 | 2014-03-26 | 中国南玻集团股份有限公司 | Glass film coating system |
| CN111233344A (en) * | 2018-11-29 | 2020-06-05 | 比亚迪股份有限公司 | Decorative glass and preparation method and application thereof |
-
2001
- 2001-12-03 CN CN01258489.4U patent/CN2516564Y/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100441066C (en) * | 2004-12-24 | 2008-12-03 | 许廷格电子有限及两合公司 | Plasma excitation system and large surface plasma coating system |
| CN101880131A (en) * | 2010-06-09 | 2010-11-10 | 深圳市力合薄膜科技有限公司 | Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter |
| US7977255B1 (en) | 2010-09-10 | 2011-07-12 | Applied Materials, Inc. | Method and system for depositing a thin-film transistor |
| CN102485947A (en) * | 2010-12-06 | 2012-06-06 | 杭州韩世通信电子有限公司 | Control system of oxygen content of sputtering target surface, probe and method for producing PET plate coated with ITO film |
| CN102485947B (en) * | 2010-12-06 | 2013-09-25 | 杭州韩世通信电子有限公司 | Control system of oxygen content of sputtering target surface, probe and method for producing PET plate coated with ITO film |
| CN103663996A (en) * | 2013-11-20 | 2014-03-26 | 中国南玻集团股份有限公司 | Glass film coating system |
| CN103663996B (en) * | 2013-11-20 | 2017-02-08 | 中国南玻集团股份有限公司 | Glass film coating system |
| CN111233344A (en) * | 2018-11-29 | 2020-06-05 | 比亚迪股份有限公司 | Decorative glass and preparation method and application thereof |
| CN111233344B (en) * | 2018-11-29 | 2022-01-07 | 比亚迪股份有限公司 | Decorative glass and preparation method and application thereof |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |