CN101880131A - Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter - Google Patents
Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter Download PDFInfo
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- CN101880131A CN101880131A CN 201010196056 CN201010196056A CN101880131A CN 101880131 A CN101880131 A CN 101880131A CN 201010196056 CN201010196056 CN 201010196056 CN 201010196056 A CN201010196056 A CN 201010196056A CN 101880131 A CN101880131 A CN 101880131A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 67
- 238000000576 coating method Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000012545 processing Methods 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 238000007747 plating Methods 0.000 claims description 35
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 28
- 238000005516 engineering process Methods 0.000 claims description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 238000012797 qualification Methods 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 238000007602 hot air drying Methods 0.000 abstract 1
- 238000007689 inspection Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
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Abstract
The invention relates to a production method of a low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of a color filter, belonging to the technical field of filter coating. The production method comprises the following processing steps of: A. cleaning a substrate, and then carrying out flat plate cleaning and hot-air drying; B. mounting the substrate for coating, wherein SiO2 is firstly coated, the heating temperature of the substrate is 210-250 DEG C, the transmission speed frequency in a coating chamber is 7.0-13.0Hz, a SiO2 film is coated by using two polycrystalline silicon targets, and processing conditions are as follows: the flow of O2 is 35Sccm, the flow of Ar is 200-220Sccm, the vacuum degree is 3.0*10<-1>-4.5*10<-1>Pa, and the total air pressure is 0.40-0.45Pa; and C. coating an ITO film, wherein the ITO film is coated by using six ITO targets, and processing conditions are as follows: the flow of Ar in the coating chamber is 200-220Sccm, and the vacuum degree of the coating chamber is 4.0*10<-1>-4.5*10<-1>Pa. The production method has the advantages of simple process and high product qualification rate.
Description
Technical field:
The present invention relates to a kind of production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter, it belongs to the coating technique field of spectral filter.
Background technology:
Colored filter is widely used in mobile phone, digital camera, Digital Video, PDA, MP4, vehicle-carrying display screen, Industry Control panel etc.Along with the market requirement of this type of consumption electronic product constantly increases, colored filter has vast market prospect, and the development of colored filter has the good market space.The colored filter production technology, contain photoetching technique, cleaning technique, the film thickness monitoring technology, section difference control techniques, the live width control techniques, total spacing control techniques, the control of figure aligning accuracy, surface quality control techniques etc., and colored filter low temperature plating ITO be indium tin oxide conductive film is the gordian technique that colored filter is produced, there is following problem in its production technology at present: be easy to generate color exception, pin hole exceeds standard, beat arc, the defective of membrane uniformity difference, cause the colored filter Show Color unusual, short circuit, open circuit or the like is bad, qualification rate is on the low side, has a strong impact on the quality of colorized optical filtering flake products.
Summary of the invention:
The object of the present invention is to provide and a kind ofly can guarantee that the colored filter color of producing is normal, the production method of the low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter that product percent of pass is high.
The object of the present invention is achieved like this:
A kind of production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter, it comprises following processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 210 ℃～250 ℃, and coating chamber transmission speed frequency is 7.0Hz～13.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
The production method of described low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter, it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 250 ℃, and coating chamber transmission speed frequency is 11.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
The production method of described low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter is characterized in that it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 230 ℃, and coating chamber transmission speed frequency is 9.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
The production method of described low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter, it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 210 ℃, and coating chamber transmission speed frequency is 7.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
The production method of described low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter, it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 240 ℃, and coating chamber transmission speed frequency is 12.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
The saturating conducting film of low square resistance ITO that the present invention adopts low temperature, many target position sputtering method to be coated with on colored filter substrate, because resistance is low, can play energy-saving and cost-reducing effect, owing to adopt low temperature, many target position sputtering method plated film, effectively colored filter substrate is aging behind the fragmentation of colored filter substrate and the plated film, has improved the qualification rate of product.
Embodiment:
Embodiment 1
Earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques; The substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 250 ℃, and coating chamber transmission speed frequency is 11.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa; Plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
Test result: the SiO of basic unit
2Thickness is 200
SiO
2Transmitance is 90.5%; ITO thickness 2300
～2500
ITO face resistance is 8 Ω/～10 Ω/, and transmitance (550nm wavelength) is 〉=81.0%, color even, and the product final inspection is qualified.
Embodiment 2
Earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques; The substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 230 ℃, and coating chamber transmission speed frequency is 9.0Hz, at No. 4 chamber plating SiO
2, O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa, uses 2 polycrystalline silicon targets to plate SiO
2Film, 6 ITO target plating ITO films, coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.Test result: the SiO of basic unit
2Thickness is 150
～200
SiO
2Transmitance is 90.5%; ITO thickness 2500
～2800
ITO face resistance is 7 Ω/～8 Ω/, and transmitance (550nm wavelength) is 〉=82.0%, color even, and the product final inspection is qualified.
Embodiment 3
Earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques; The substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 210 ℃, and coating chamber transmission speed frequency is 7.0Hz, at No. 4 chamber plating SiO
2, O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa, uses 2 polycrystalline silicon targets to plate SiO
2Film, 6 ITO target plating ITO films, coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.Test result: the SiO of basic unit
2Thickness is 150
～200
SiO
2Transmitance is 90.5%; ITO thickness 2800
～3500
ITO face resistance is 5 Ω/～7 Ω/, and transmitance (550nm wavelength) is 〉=83.0%, color even, and the product final inspection is qualified.
Embodiment 4
Earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques; The substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 240 ℃, and coating chamber transmission speed frequency is 12.0Hz, at No. 4 chamber plating SiO
2, O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa, uses 2 SiO
2Target plates SiO
2Film, 6 ITO target plating ITO films, coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.Test result: the SiO of basic unit
2Thickness is 150
～200
The SiO2 transmitance is 90.5%; ITO thickness 2000
～2300
ITO face resistance is 10 Ω/～12 Ω/, and transmitance (550nm wavelength) is 〉=81.0%, color even, and the product final inspection is qualified.
Embodiment 5
Earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques; The substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 240 ℃, and coating chamber transmission speed frequency is 13.0Hz, at No. 4 chamber plating SiO
2, O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa, uses 2 polycrystalline silicon targets to plate SiO
2Film uses 2 ITO targets to plate the ITO film, 6 ITO target plating ITO films, and coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.Test result: the SiO of basic unit
2Thickness is 150
～200
SiO
2Transmitance is 90.5%; ITO thickness 1800
～2000
ITO face resistance is 12 Ω/～15 Ω/, and transmitance (550nm wavelength) is 〉=83.0%, color even, and the product final inspection is qualified.
Claims (5)
1. the production method of a low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter, it comprises following processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 210 ℃～250 ℃, and coating chamber transmission speed frequency is 7.0Hz～13.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
2. the production method of the low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter described in claim 1 is characterized in that it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 250 ℃, and coating chamber transmission speed frequency is 11.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
3. the production method of the low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter described in claim 1 is characterized in that it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 230 ℃, and coating chamber transmission speed frequency is 9.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
4. the production method of the low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter described in claim 1 is characterized in that it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 210 ℃, and coating chamber transmission speed frequency is 7.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
5. the production method of the low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter described in claim 1 is characterized in that it comprises following concrete processing step:
A: earlier carry out the ultrasonic cleaning substrate, carry out again that flat board cleans, heat is dried dry according to routine techniques;
B: the substrate of the above-mentioned processing load of putting on the shelf is carried out plated film, earlier plating SiO
2, plated film employing power is closed the vertical full-automatic continuous magnetron sputtering coating equipment of film science and technology, and substrate heating temperature is 240 ℃, and coating chamber transmission speed frequency is 12.0Hz, uses 2 polycrystalline silicon targets to plate SiO No. 4 chamber
2Film, its processing condition are: O
2Flow is 35Sccm, Ar flow 200～220Sccm, vacuum tightness 3.0 * 10
-1Pa～4.5 * 10
-1Between the Pa, total gas pressure is 0.40～0.45Pa;
C: plate the ITO film again: use 6 ITO target plating ITO films, processing condition are: coating chamber Ar flow is 200～220Sccm, coating chamber vacuum tightness 4.0*10
-1Pa～4.5*10
-1Between the Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010196056 CN101880131A (en) | 2010-06-09 | 2010-06-09 | Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010196056 CN101880131A (en) | 2010-06-09 | 2010-06-09 | Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101880131A true CN101880131A (en) | 2010-11-10 |
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ID=43052302
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010196056 Pending CN101880131A (en) | 2010-06-09 | 2010-06-09 | Production method of low-temperature coated ITO (Indium Tin Oxide) transparent conductive film of color filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106544644A (en) * | 2016-10-27 | 2017-03-29 | 广东星弛光电科技有限公司 | A kind of anti-fingerprint handset touch panel colour coating process |
| CN110928012A (en) * | 2019-12-06 | 2020-03-27 | 深圳市康盛光电科技有限公司 | Anti-electric breakdown preparation method of ITO conductive film for light modulation film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2441813Y (en) * | 2000-08-18 | 2001-08-08 | 深圳威士达真空系统工程有限公司 | Gas isolator for reaction sputtering silicon dioxide and conductive film contineous plating |
| CN2516564Y (en) * | 2001-12-03 | 2002-10-16 | 深圳豪威真空光电子股份有限公司 | On-line joint coating device with intermediate-frequeney reactive sputtering silica for indium oxide tin glass |
| US7070987B2 (en) * | 2000-10-30 | 2006-07-04 | Sru Biosystems, Inc. | Guided mode resonant filter biosensor using a linear grating surface structure |
| US7215391B2 (en) * | 2004-07-16 | 2007-05-08 | United Microelectronics Corp. | Liquid crystal on silicon display with micro color filters positioned on the top surface of the transparent substrate |
| US20080259459A1 (en) * | 2007-04-23 | 2008-10-23 | Wintek Corporation | Reflective filter |
| CN101465172A (en) * | 2008-12-31 | 2009-06-24 | 中国科学院上海硅酸盐研究所 | Composite structure transparent conductive film and preparation method thereof |
-
2010
- 2010-06-09 CN CN 201010196056 patent/CN101880131A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2441813Y (en) * | 2000-08-18 | 2001-08-08 | 深圳威士达真空系统工程有限公司 | Gas isolator for reaction sputtering silicon dioxide and conductive film contineous plating |
| US7070987B2 (en) * | 2000-10-30 | 2006-07-04 | Sru Biosystems, Inc. | Guided mode resonant filter biosensor using a linear grating surface structure |
| CN2516564Y (en) * | 2001-12-03 | 2002-10-16 | 深圳豪威真空光电子股份有限公司 | On-line joint coating device with intermediate-frequeney reactive sputtering silica for indium oxide tin glass |
| US7215391B2 (en) * | 2004-07-16 | 2007-05-08 | United Microelectronics Corp. | Liquid crystal on silicon display with micro color filters positioned on the top surface of the transparent substrate |
| US20080259459A1 (en) * | 2007-04-23 | 2008-10-23 | Wintek Corporation | Reflective filter |
| CN101465172A (en) * | 2008-12-31 | 2009-06-24 | 中国科学院上海硅酸盐研究所 | Composite structure transparent conductive film and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106544644A (en) * | 2016-10-27 | 2017-03-29 | 广东星弛光电科技有限公司 | A kind of anti-fingerprint handset touch panel colour coating process |
| CN110928012A (en) * | 2019-12-06 | 2020-03-27 | 深圳市康盛光电科技有限公司 | Anti-electric breakdown preparation method of ITO conductive film for light modulation film |
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