CN103204633B - Etching system having many etching modes - Google Patents
Etching system having many etching modes Download PDFInfo
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- CN103204633B CN103204633B CN201210008576.3A CN201210008576A CN103204633B CN 103204633 B CN103204633 B CN 103204633B CN 201210008576 A CN201210008576 A CN 201210008576A CN 103204633 B CN103204633 B CN 103204633B
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- etching
- tank
- glass
- pump
- squeeze roll
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- 238000005530 etching Methods 0.000 title claims abstract description 55
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000007921 spray Substances 0.000 abstract description 20
- 238000007654 immersion Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Abstract
The invention provides an etching system having many etching modes. The etching system is composed of an etching acid box, a pump, baffle plates, a driving roller way, a water squeezing roller, nozzles and a water tank, and the etching acid box is sequentially connected with the pump and the nozzles through a pipeline; the driving roller way is arranged in the water tank, and the driving roller way is provided with the water squeezing roller, and the driving roller way and the water squeezing roller form an etching solution tank in the water tank; and the baffle plates are fixed at two sides of the periphery of the etching solution tank respectively. The etching system can realize a spray mode, an immersion mode and a spray and etching combined mode, has the characteristics of etching solution concentration stability and small etching solution fluidity, can effectively solve a technologic problem that the large-area uniform etching and high output cannot be realized in present etching technologies, and is very practical.
Description
Technical field
The present invention relates to a kind of etching system, particularly a kind of etching system with multiple etch mode.
Background technology
TCO(Transparentconductingoxide) glass, i.e. transparent conductive oxide coated glass, be evenly plate the conductive oxide film of layer of transparent at surface of plate glass by the method for physics or plated film, mainly comprise oxide and the composite multi-component oxide film material thereof of In, Sn, Zn and Cd.
First TCO glass be applied in flat-panel monitor, and the electro-conductive glass of present ITO type is still the main flow glass electrode product of flat-panel monitor industry.In recent years, the rise of crystalline silicon price has greatly promoted the development of thin-film solar cells, current thin film solar cell accounts for world's photovoltaic market share more than 10%, photovoltaic TCO glass is as the necessary component of electrode before battery, the market demand increases rapidly, becomes a very powerful and exceedingly arrogant high-tech coated glass product.
In solar cells, the electrode of crystal silicon chip class battery is the wire being welded on silicon chip surface, and it is just passable that front shroud glass only needs to reach high transmission rate.Thin-film solar cells is coated with p-i-n semiconductor film on the conductive film of glass surface, then be coated with back electrode.
TCO coating film on glass technique solar energy TCO coated glass is current based on FTO glass, and AZO glass is that following developing direction TCO thin film mainly comprises the oxide of In, Sn, Zn and Cd and composite multi-component oxide thereof etc.Coating raw material and the technique of transparent conductive oxide are a lot, constantly screened by scientific research, coating raw material and the technique of electrically conducting transparent are a lot, constantly screened by scientific research, the performance requirement mainly containing ITO, FTO, AZO tri-kinds of TCO glass and photovoltaic cell at present matches.
Ito coated glass is a kind of very ripe product, has transmitance high, and rete is firm, the features such as good conductivity, and the initial stage was once applied to the front electrode of photovoltaic cell.But along with the raising that absorbing properties requires, TCO glass must possess the ability improving light scattering, and ITO plated film is difficult to accomplish this point, and laser ablation performance is also poor.Indium is rare element, and few at occurring in nature storage capacity, price is higher.Stable not in the plasma when ITO is applied to solar cell, the therefore electrode glass of the non-photovoltaic cell main flow of ITO plated film at present.
The electric conductivity of ITO is best at present, lowest resistivity reaches 10-5 Ω cm magnitude, but can by H ion reduction in the PEVCD technique that ito glass makes in thin-film solar cells because of In ion, light transmission rate is caused to decay 80%, electrically decline to a great extent, In is rare metal simultaneously, expensive, so electrode before being not too applicable to thin-film solar cells; FTO is the product with mist degree, and laser ablation is easy, and optical property such as to be suitable at the advantage, and the TCO glass utilizing this technology to produce has become the main product of film photovoltaic cell; The current progress of AZO is rapid, and resistivity and translucidus are all better than FTO, and abundant raw material, good stability, is following developing direction, but has problems in making herbs into wool at present, and long term stability problem, expose its meeting adsorb oxygen and steam in an atmosphere, current industrial applications is also immature.Coating process mainly adopts APCVD or magnetron sputtering method at present, and TCO film plating process mainly adopts chemical vapour deposition technique (FTO glass), and magnetron sputtering method (AZO glass).The positive ion bombardment solid state cathode that sputter-deposited thin films mainly produces with noble gas discharge, incident ion and target collide, thus the target material surface atom bombardment that sputtered material is made out, sputtered atom is out with certain kinetic energy, along certain direction directive substrate, film can be gone out at deposited on substrates.The film uniformity of magnetron sputtering method plating is better, but with regard to our country, the preparation technology of high-quality target is also immature, needs from external import, and production cost is just corresponding higher.In addition, because magnetron sputtering method must carry out under certain vacuum condition, what thus limit transparent conducting glass to a certain extent effectively prepares area.Chemical vapour deposition technique utilizes gaseous state (steam) precursor, high temperature substrate surface or near, carry out atom or intermolecular chemical reaction, form the process of one deck solid deposited thing.The product cost that this method is produced is relatively low, and laser ablation is easy, and optical property such as to be suitable at the advantage.
TCO coated glass has the physical property such as printing opacity, conduction, is widely used in the fields such as LCDs, electroluminescent, solar cell.AZO coated glass is a kind of important TCO glass, etching technics after employing vacuum sputtering, there is the feature such as size large (being greater than 2200mm × 2600mm), film thickness distribution even (< ± 2%), the more important thing is that etching technics freely can design microscopic appearance and the optical property of rete according to subsequent thin film battery requirements, this makes AZO glass show huge market potential in photovoltaic film battery applications.
According to the application demand of hull cell, AZO glass needs to possess the uniform distribution that specific microscopic appearance is become reconciled, this proposes very high requirement to etching system, especially for large-area coating film glass, and such as, on market common 1100mm × 1400mm and 2200mm × 2600mm equal-specification.In existing etching technics, cost is low, etching speed fast, etch period is easy to the features such as adjustment to utilize low-concentration hcl to have as the wet processing of etching solution, and applicable large-scale production and application, become the emphasis of TCO glass art research.
At present, common wet etch systems, mainly adopts the etching apparatus of spray model, and it utilizes certain pressure that etching solution is sprayed to glass surface, realizes the fast chemical reaction on coated glass surface, thus produces certain pattern.Because the reaction speed of AZO rete and hydrochloric acid is very fast, add larger spray pressure, the AZO glass pattern that this can cause spray process to be produced is bad, is easy to visual defects such as generation water wave and over etching striped etc., and the subsequent thin film battery affecting AZO glass is applied.And the key addressed this problem is the impact that elimination spray pressure brings etching speed, and the too fast visual defects brought of glass surface flowing.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of etching system with multiple etch mode, be very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.
The invention provides a kind of etching system with multiple etch mode, by the sour case of etching, pump, baffle plate, live-roller gear, squeeze roll(s), nozzle and tank composition, is characterized in that: etch sour case and connect pump and nozzle successively by pipeline; Be provided with live-roller gear in tank, pressure water roller on live-roller gear, live-roller gear and squeeze roll(s) form an etching solution groove in tank; The peripheral both sides of described etching solution groove are each fixes one piece of baffle plate.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further:
Described pump is variable frequency pump, and variable-frequency motor is housed.
Described squeeze roll(s) lower end at right angle setting carrying roller, described squeeze roll(s) can freely move up and down in vertical direction.
Described squeeze roll(s) external sheath rubber layer.
Described baffle plate is made up of a PVC pedestal and one block of rubber slab.
The multiple nozzle of at right angle setting above described tank, nozzle is uniformly distributed.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of description, and can become apparent to allow above and other object of the present invention, feature and advantage, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.But, appended accompanying drawing only for illustration of and elaboration, do not form limitation of the scope of the invention.
Fig. 1 illustrates a kind of formation schematic diagram with the etching system of multiple etch mode that the present invention relates to.
Accompanying drawing illustrates: 1. etch sour case, 2. frequency conversion spray pump, 3. baffle plate, 4. live-roller gear, 5. squeeze roll(s), 6. nozzle, 7. baffle plate, 8. tank.
Detailed description of the invention
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take and effect, below in conjunction with accompanying drawing and preferred embodiment, to a kind of method making polysilicon side wall proposed according to the present invention, be described in detail as follows.
Different embodiments of the invention will details are as follows, to implement different technical characteristic of the present invention, will be understood that, the unit of the specific embodiment of the following stated and configuration are in order to simplify the present invention, and it is only example and does not limit the scope of the invention.
The invention provides a kind of etching system with multiple etch mode, by the sour case of etching, pump, baffle plate, live-roller gear, squeeze roll(s), nozzle and tank composition, is characterized in that: etch sour case and connect pump and nozzle successively by pipeline; Be provided with live-roller gear in tank, pressure water roller on live-roller gear, live-roller gear and squeeze roll(s) form an etching solution groove in tank; The peripheral both sides of described etching solution groove are each fixes one piece of baffle plate.
Fig. 1 illustrates a kind of formation schematic diagram with the etching system of multiple etch mode that the present invention relates to.
The present invention utilizes squeeze roll(s) and live-roller gear to establish an etching solution groove, and glass completes wet etching in transport process in solution tank, and realizes accurately controlling etch period by adjustment transmission speed.Devise a kind of baffle plate at the peripheral two ends of solution tank, in conjunction with frequency conversion spray pump and nozzle, it effectively can improve the liquid level of solution, realizes glass and is soaked in solution tank and completes etching.
In order to realize the accurate control of glass transmission speed, need to avoid glass by baffle, the present invention have selected a kind of rubber slab with certain suppleness as baffle plate, and it can either stop current to realize improves liquid level, can buckle through out-of-date at glass again, allow glass pass through smoothly.Utilize this baffle arrangement, can liquid level be controlled in conjunction with shower nozzle, thus realize spray model, immersion pattern, and the etch mode combining spray and soak, this is conducive to the AZO glass producing various pattern.
In order to avoid the difference of topical solutions concentration, the present invention adopts multiple shower nozzle to enter the technology of acid, realizes along the even spray perpendicular to solution on glass direction.Variable-frequency motor can control spray pressure, realizes the liquid level of pressure and the glass surface controlled into acid solution.
Squeeze roll(s) of the present invention is a kind of passive conveyer, and transmission speed is controlled by live-roller gear, and live-roller gear is consistent.And the two ends of squeeze roll(s) present free state in vertical direction, with the turnover of glass, squeeze roll(s) can realize free lifting, can control the liquid level of glass surface.
The present invention devises a set of wet etch systems, comprise frequency conversion spray pump, nozzle, squeeze roll(s), tank and baffle plate, spray model, immersion pattern can be realized, and combine the pattern of spray and etching, there is etching solution concentration stabilize and the little feature of mobility, this can solve the technical barrier of Large-Area-Uniform etching and the high production run in etching technics effectively, is very suitable for practicality.
The invention has the advantages that:
1. a kind of novel baffle arrangement of this system, can guarantee that immersion pattern etches, guarantee that the advance of glass is not stopped simultaneously, this structure is the important leverage realizing large-scale production.
2. this etching system combines spray and soaks two kinds of patterns, and can realize separately spray model and realize separately immersion pattern.
3. this system can solve the impact of spray pressure, reduces surface solution flowing simultaneously, achieves even etching.
4. this system has spray model, immersion pattern, and combines the etching process of spray and immersion pattern, and this can ensure that etching system can produce the AZO glass with various surface topography.
By illustrating and accompanying drawing, give the exemplary embodiments of the ad hoc structure of detailed description of the invention.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (3)
1. there is an etching system for multiple etch mode, by the sour case of etching, pump, baffle plate, live-roller gear, squeeze roll(s), nozzle and tank composition, is characterized in that: etch sour case and connect pump and nozzle successively by pipeline; Be provided with live-roller gear in tank, pressure water roller on live-roller gear, live-roller gear and squeeze roll(s) form an etching solution groove in tank; The peripheral both sides of described etching solution groove are each fixes one piece of baffle plate; Described pump is variable frequency pump, and variable-frequency motor is housed; Described baffle plate is made up of a PVC pedestal and one block of rubber slab; Described tank upper vertical installs multiple nozzle, and nozzle is uniformly distributed.
2. a kind of etching system with multiple etch mode as claimed in claim 1, is characterized in that: described squeeze roll(s) lower end at right angle setting carrying roller, described squeeze roll(s) can freely move up and down in vertical direction.
3. a kind of etching system with multiple etch mode as claimed in claim 1, is characterized in that: described squeeze roll(s) external sheath rubber layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210008576.3A CN103204633B (en) | 2012-01-12 | 2012-01-12 | Etching system having many etching modes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210008576.3A CN103204633B (en) | 2012-01-12 | 2012-01-12 | Etching system having many etching modes |
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| Publication Number | Publication Date |
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| CN103204633A CN103204633A (en) | 2013-07-17 |
| CN103204633B true CN103204633B (en) | 2015-04-29 |
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| CN201210008576.3A Expired - Fee Related CN103204633B (en) | 2012-01-12 | 2012-01-12 | Etching system having many etching modes |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107195573A (en) * | 2017-07-14 | 2017-09-22 | 通威太阳能（合肥）有限公司 | SCHMID etching tank capable of reducing acid consumption and using method thereof |
| CN108465939B (en) * | 2018-02-09 | 2020-10-27 | 深圳市华星光电半导体显示技术有限公司 | Laser etching device and laser etching method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202067777U (en) * | 2011-03-07 | 2011-12-07 | 扬博科技股份有限公司 | Vertical substrate wet process soaking device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01212253A (en) * | 1988-02-17 | 1989-08-25 | Nippon Electric Glass Co Ltd | Hydrofluoric acid treatment device for sealing edge part of panel |
| KR100675628B1 (en) * | 2002-10-16 | 2007-02-01 | 엘지.필립스 엘시디 주식회사 | Insulation Etching Equipment and Etching Method |
| JP2005246943A (en) * | 2004-03-04 | 2005-09-15 | Kiyokatsu Watanabe | Method for manufacturing glass substrate/laminated protection sheet and automatic device |
| KR20090070792A (en) * | 2007-12-27 | 2009-07-01 | 주식회사 디에스티 | Etching Device of Glass Substrate |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202067777U (en) * | 2011-03-07 | 2011-12-07 | 扬博科技股份有限公司 | Vertical substrate wet process soaking device |
Non-Patent Citations (1)
| Title |
|---|
| 单片湿法刻蚀机供酸管路系统设计;孙大伟等;《电子工业专用设备》;20091031;第30-33页 * |
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