CN222233647U - Solar cell - Google Patents
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- CN222233647U CN222233647U CN202323305436.5U CN202323305436U CN222233647U CN 222233647 U CN222233647 U CN 222233647U CN 202323305436 U CN202323305436 U CN 202323305436U CN 222233647 U CN222233647 U CN 222233647U
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Abstract
本实用新型揭示了一种太阳能电池，所述太阳能电池包括：光电转换单元，包括相对设置的受光面及背光面；透明导电层，包括位于光电转换单元受光面上的第一透明导电层和位于光电转换单元背光面上的第二透明导电层；电极，包括与第一透明导电层电接触的第一电极及与第二透明导电层电接触的第二电极；其中，所述第二透明导电层包括依次层叠于光电转换单元背光面上的第二光学优势层和第二电极接触层，所述第二电极接触层的厚度大于或等于15nm，所述第二电极接触层的迁移率小于第二光学优势层的迁移率。本实用新型通过优化电池背面透明导电层的结构、厚度及迁移率等，能获得更高的光学增益和电学增益，有效提高了太阳能电池的光电转换效率。
The utility model discloses a solar cell, which comprises: a photoelectric conversion unit, comprising a light-receiving surface and a backlight surface arranged oppositely; a transparent conductive layer, comprising a first transparent conductive layer located on the light-receiving surface of the photoelectric conversion unit and a second transparent conductive layer located on the backlight surface of the photoelectric conversion unit; an electrode, comprising a first electrode electrically contacting the first transparent conductive layer and a second electrode electrically contacting the second transparent conductive layer; wherein the second transparent conductive layer comprises a second optical advantage layer and a second electrode contact layer sequentially stacked on the backlight surface of the photoelectric conversion unit, the thickness of the second electrode contact layer is greater than or equal to 15nm, and the mobility of the second electrode contact layer is less than the mobility of the second optical advantage layer. The utility model can obtain higher optical gain and electrical gain by optimizing the structure, thickness and mobility of the transparent conductive layer on the back side of the battery, and effectively improves the photoelectric conversion efficiency of the solar cell.
Description
Technical Field
The utility model belongs to the technical field of solar energy, and particularly relates to a solar cell.
Background
The heterojunction battery (HJT) is a hybrid solar battery made of a crystalline silicon substrate and an amorphous silicon film, has the advantages of simple preparation process, low process temperature, high open-circuit voltage, high photoelectric conversion efficiency, low temperature coefficient and the like, and is one of the most widely applied high-efficiency crystalline silicon solar technologies at present.
With the introduction of P-side crystallites in heterojunction cells, the back side of the cell need not only meet electrical requirements, similar to an N-side transparent conductive layer (TCO layer), a suitable optical window may further improve cell efficiency. While in order to ensure good contact with the electrode, a high carrier concentration design is typically employed in the TCO layer in contact with the electrode to ensure contact. In order to avoid an increase in optical loss due to high carrier concentration, the film thickness of the layer is usually designed to be reduced (. Ltoreq.10 nm).
In the experimental process, the electrode contact resistivity is not only influenced by the TCO layer contacted with the electrode, and the low-temperature silver paste has a certain corrosion depth when contacted with the TCO layer, so that the thickness of the optical advantage layer is increased through the design of different film thicknesses on the back surface of the battery in order to realize independent regulation and control of the optical advantage layer and the electrode contact layer, the depth required by the contact between the low-temperature paste and the TCO layer is ensured, and the better photoelectric conversion efficiency can be obtained.
Accordingly, in view of the above-described technical problems, it is necessary to provide a solar cell.
Disclosure of utility model
In view of the above, an object of the present utility model is to provide a solar cell, which can improve the photoelectric conversion efficiency of the cell by optimizing the thickness and mobility of the transparent conductive layer on the back surface of the cell.
In order to achieve the above object, an embodiment of the present utility model provides the following technical solution:
a solar cell, the solar cell comprising:
The photoelectric conversion unit comprises a light receiving surface and a backlight surface which are oppositely arranged;
The transparent conductive layer comprises a first transparent conductive layer positioned on the light receiving surface of the photoelectric conversion unit and a second transparent conductive layer positioned on the backlight surface of the photoelectric conversion unit;
An electrode comprising a first electrode in electrical contact with the first transparent conductive layer and a second electrode in electrical contact with the second transparent conductive layer;
The second transparent conductive layer comprises a second optical advantage layer and a second electrode contact layer which are sequentially laminated on the backlight surface of the photoelectric conversion unit, the thickness of the second electrode contact layer is larger than or equal to 15nm, and the mobility of the second electrode contact layer is smaller than that of the second optical advantage layer.
In one embodiment, the thickness of the second transparent conductive layer is 80 nm-120 nm, the thickness of the second optically dominant layer is 30 nm-100 nnm, and the thickness of the second electrode contact layer is 15 nm-50 nm.
In one embodiment, the ratio of the mobility of the second electrode contact layer to the mobility of the second optically dominant layer is (0.7-0.9): 1, and/or,
The mobility of the second optically dominant layer was 35cm 2/V·s～100cm2/V.s, and the mobility of the second electrode contact layer was 25cm 2/V·s～90cm2/V.s.
In an embodiment, the carrier concentration of the second electrode contact layer is greater than the carrier concentration of the second optically dominant layer.
In one embodiment, the carrier concentration of the second electrode contact layer is 2.0E20/cm 3～4.0E20/cm3, and the carrier concentration of the second optically dominant layer is 0.2E20/cm 3～2.0E20/cm3.
In an embodiment, the transparent conductive layer is any one of an ITO layer, an IWO layer, an IMO layer, an AZO layer, and a GZO layer.
In an embodiment, the first transparent conductive layer includes a first optically advantageous layer and a first electrode contact layer sequentially stacked on the light receiving surface of the photoelectric conversion unit.
In one embodiment, the first electrode contact layer has a thickness of 15nm or greater, the first electrode contact layer has a mobility less than the mobility of the first optically advantageous layer, and/or,
The carrier concentration of the first electrode contact layer is greater than the carrier concentration of the first optically dominant layer.
In one embodiment, the first transparent conductive layer has a thickness of 80nm to 120nm, the first optically dominant layer has a thickness of 30nm to 100nnm, the first electrode contact layer has a thickness of 15nm to 50nm, and/or,
The ratio of the mobility of the first electrode contact layer to the mobility of the first optically advantageous layer is (0.7-0.9): 1, and/or,
The mobility of the first optically dominant layer is 35cm 2/V·s～100cm2/V.s, the mobility of the first electrode contact layer is 25cm 2/V·s～90cm2/V.s, and/or,
The carrier concentration of the first electrode contact layer is 2.0E20/cm 3～4.0E20/cm3, and the carrier concentration of the first optically dominant layer is 0.2E20/cm 3～2.0E20/cm3.
In an embodiment, the solar cell is a heterojunction cell, and the photoelectric conversion unit includes:
The substrate comprises a first surface and a second surface which are oppositely arranged, and the substrate is doped with N type or P type;
a first intrinsic layer on the first surface of the substrate, the first intrinsic layer being an intrinsic amorphous silicon layer and/or an intrinsic microcrystalline silicon layer;
the first doped layer is positioned on the first intrinsic layer, and is an amorphous silicon layer and/or a microcrystalline silicon layer, and the doping type of the first doped layer is the same as that of the substrate;
The second intrinsic layer is positioned on the second surface of the substrate and is an intrinsic amorphous silicon layer and/or an intrinsic microcrystalline silicon layer;
The second doped layer is positioned on the second intrinsic layer, and is an amorphous silicon layer and/or a microcrystalline silicon layer, and the doping type of the second doped layer is opposite to that of the substrate.
The utility model has the following beneficial effects:
According to the utility model, by optimizing the structure, thickness, mobility and the like of the transparent conductive layer on the back of the battery, higher optical gain and electrical gain can be obtained, and the photoelectric conversion efficiency of the solar battery is effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
Fig. 1 is a schematic structural view of a solar cell according to the present utility model;
fig. 2 is a schematic structural view of a solar cell according to a comparative example of the present utility model;
fig. 3 is a schematic structural diagram of a solar cell in embodiment 1 of the present utility model;
fig. 4 is a schematic structural diagram of a solar cell in embodiment 2 of the present utility model.
Detailed Description
In order to make the technical solution of the present utility model better understood by those skilled in the art, the technical solution of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
In the present utility model, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
Referring to fig. 1, a schematic structure of a solar cell according to the present utility model is shown, which includes:
The photoelectric conversion unit 100 includes a light receiving surface and a light receiving surface which are disposed opposite to each other;
A transparent conductive layer including a first transparent conductive layer (TCO 1) 21 on the light receiving surface of the photoelectric conversion unit 100 and a second transparent conductive layer (TCO 2) 22 on the back surface of the photoelectric conversion unit 100;
The electrodes include a first electrode 31 in electrical contact with the first transparent conductive layer 21 and a second electrode 32 in electrical contact with the second transparent conductive layer 22.
The second transparent conductive layer 22 in the present utility model includes a second optically advantageous layer 221 (i.e., an inner transparent conductive layer) electrically contacting the back surface of the photoelectric conversion unit 100, and a second electrode contact layer 222 (i.e., an outer transparent conductive layer) electrically contacting the second electrode 32, and the second electrode contact layer 222 is stacked on the second optically advantageous layer 221.
Wherein the thickness of the second electrode contact layer 222 is greater than or equal to 15nm, and the mobility of the second electrode contact layer 222 is smaller than the mobility of the second optically advantageous layer 221.
Preferably, the thickness of the second transparent conductive layer 22 (i.e., the sum of the thicknesses of the second electrode contact layer 222 and the second optical advantage layer 221) is 80nm to 120nm, the thickness of the second optical advantage layer 221 is 30nm to 100nnm, and the thickness of the second electrode contact layer 222 is 15nm to 50nm.
Preferably, the ratio of the mobility of the second electrode contact layer 222 to the mobility of the second optically advantageous layer 221 is (0.7-0.9): 1, the mobility of the second optically advantageous layer 221 is 35cm 2/V·s～100cm2/v·s, and the mobility of the second electrode contact layer 222 is 25cm 2/V·s～90cm2/v·s.
Further, the carrier concentration of the second electrode contact layer 222 is greater than that of the second optically advantageous layer 221 in the present utility model.
Preferably, the carrier concentration of the second electrode contact layer 222 is 2.0E20/cm 3～4.0E20/cm3, and the carrier concentration of the second optically advantageous layer 221 is 0.2E20/cm 3～2.0E20/cm3.
The second optically advantageous layer 221 and the second electrode contact layer 222 in the second transparent conductive layer 22 are made of the same transparent conductive oxide material, and the transparent conductive layer may be any one of an ITO layer, an IWO layer, an IMO layer, an AZO layer, a GZO layer, and the like.
In order to further improve the conductivity of the transparent conductive layer, the transparent conductive layer is doped with metal or metal oxide, and the doping amount can be 0.5-10 wt%.
For example, one or more of SnO2、TiO2、CeO2、Ta2O5、Ga2O3、ZrO2、MoO3 and the like may be doped In the In 2O3 substrate In the ITO layer, WO 2 is doped In the IWO layer, moO 3 is doped In the IMO layer, al 2O3 is doped In the AZO layer, and Ga 2O3 is doped In the ZnO substrate.
The transparent conductive layer is only a part of materials, and the transparent conductive layer is not limited to the above materials, and all doped/undoped oxides capable of realizing conductivity and transparency simultaneously belong to the protection scope of the present utility model.
Preferably, the first transparent conductive layer 21 in the present utility model includes a first optically advantageous layer 211 (i.e., an inner transparent conductive layer) electrically contacting the light receiving surface of the photoelectric conversion unit 100, and a first electrode contact layer 212 (i.e., an outer transparent conductive layer) electrically contacting the first electrode 31, the first electrode contact layer 212 being stacked on the first optically advantageous layer 221.
In the first transparent conductive layer 21 of the present utility model, the structure, material, carrier concentration, mobility, etc. of the first optically advantageous layer 211 and the first electrode contact layer 212 are identical to those of the second transparent conductive layer 22, and will not be described here again.
Illustratively, the solar cell in the present utility model is described by taking a heterojunction cell (HJT) as an example, the photoelectric conversion unit 100 is a cell body of the heterojunction cell, the light receiving surface is a front surface (or an upper surface) of the cell body, and the back surface is a back surface (or a lower surface) of the cell body.
Specifically, the photoelectric conversion unit 100 includes:
A substrate 11, including a first surface (i.e., front or upper surface) and a second surface (i.e., back or lower surface) disposed opposite each other, the substrate being N-doped or P-doped;
A first intrinsic layer 121 on the first surface of the substrate 11, the first intrinsic layer 121 may be an intrinsic amorphous silicon layer or an intrinsic microcrystalline silicon layer;
The first doped layer 131 is located on the first intrinsic layer 121, and the first doped layer 131 may be an amorphous silicon layer or a microcrystalline silicon layer, and the doping type is the same as that of the substrate;
A second intrinsic layer 122 on the second surface of the substrate 11, the second intrinsic layer 122 may be an intrinsic amorphous silicon layer or an intrinsic microcrystalline silicon layer;
The second doped layer 132 is located on the second intrinsic layer 122, and the second doped layer 132 may be an amorphous silicon layer or a microcrystalline silicon layer, and the doping type is opposite to that of the substrate.
Taking an N-type heterojunction cell as an example, the substrate 11 is an N-type substrate, the first doped layer 131 is N-type doped, and the second doped layer 132 is P-type doped.
The structure and the photoelectric conversion principle of the photoelectric conversion unit in the heterojunction battery are the prior art, and no description is repeated here.
Taking heterojunction solar cells as an example, the preparation method of the solar cells in the utility model comprises the following steps:
1. a photoelectric conversion unit in a solar cell is prepared.
1.1, Providing a silicon wafer.
The silicon wafer is preferably an N-type monocrystalline silicon wafer, the resistivity is 0.5-3 omega cm, the thickness is 150-200 mu m, and the size is 182mm.
1.2. And (5) cleaning and texturing.
And removing an oxide layer on the surface of the silicon wafer by using an HF solution with a dilution solubility of 5%, and forming a shallower pyramid suede structure on the surface by using anisotropic corrosion of monocrystalline silicon by using a method of adding KOH or NaOH or tetramethyl ammonium hydroxide (TMAH) and alcohol.
1.3, Depositing an amorphous silicon layer.
Firstly introducing SiH 4 (silane) gas into a vacuum chamber, and forming a first intrinsic amorphous silicon layer on the whole area of the first surface of the N-type monocrystalline silicon piece through a plasma CVD process, then introducing SiH 4 gas, H 2 gas and PH 3 (phosphine) gas into the vacuum chamber, and forming an N-type doped amorphous silicon layer on the first intrinsic amorphous silicon layer through the plasma CVD process;
Then, the tray is turned over, siH 4 (silane) gas is introduced into the vacuum chamber, and a second intrinsic amorphous silicon layer is formed on the entire area of the second surface of the N-type monocrystalline silicon wafer by a plasma CVD process, and SiH 4 gas, H 2 gas and PH 3 (phosphine) gas are introduced into the vacuum chamber, and a P-type doped amorphous silicon layer is formed on the second intrinsic amorphous silicon layer by a plasma CVD process.
2. A first transparent conductive layer is deposited on the light receiving surface of the photoelectric conversion unit, and a second transparent conductive layer is deposited on the back surface of the photoelectric conversion unit.
And coating films on the front and back amorphous silicon layers by a Physical Vapor Deposition (PVD) process, wherein the physical vapor deposition process can be a Reactive Plasma Deposition (RPD) process or a magnetron sputtering process, and the back is shielded by a carrier plate design edge (or shielded by a mask), and the specific shielding area around is 0.8mm.
When the transparent conductive layer is prepared, different transparent conductive layers, namely an optical advantage layer (an inner transparent conductive layer) and an electrode contact layer (an outer transparent conductive layer) are sequentially deposited on the substrate after the amorphous silicon layer is deposited.
The specific method is as follows:
The PVD mass production equipment is provided with at least 4 non-pollution film coating target positions, different target materials are arranged on the target positions, the substrate is loaded on the carrier plate, and the substrate is sequentially subjected to film coating at different target positions to obtain the required film layer design. And adjusting the technological parameters at different target positions to adjust the thickness, mobility, carrier concentration and the like of the transparent conductive layer to be within a preset range.
The physical vapor deposition process bombards the phase in the target material by using certain energy, and simultaneously introduces corresponding gases (oxygen O 2, hydrogen H 2 and argon Ar) to form a certain atmosphere. Different process parameters are selected for different transparent conductive layers, including deposition temperature, deposition time, flow ratio of each gas in the gas, pressure in the deposition chamber, temperature in the deposition chamber, and the like.
3. First and second electrodes are formed on the first and second transparent conductive layers, respectively.
And printing a layer of low-temperature conductive silver paste on the transparent conductive layers on the front side and the back side respectively by using a screen printing process, and then sintering and curing at a low temperature of 150-300 ℃ to form a good ohmic contact electrode.
The optically advantageous layer and the electrode contact layer in the utility model adopt the same TCO material, the two-layer structure can be carried out in the PVD deposition process, only different process conditions are required to be controlled, and no new deposition step is added.
The utility model is further illustrated below with reference to specific examples.
Comparative example:
As shown in fig. 2, the solar cell in this comparative example is a heterojunction cell, which includes:
A substrate 11, including a first surface and a second surface which are oppositely arranged, wherein the substrate is doped with N type;
A first intrinsic layer 121 on the first surface of the substrate 11, the first intrinsic layer 121 being an intrinsic amorphous silicon layer;
The first doped layer 131 is located on the first intrinsic layer 121, and the first doped layer 131 is an N-type doped amorphous silicon layer;
A second intrinsic layer 122 on the second surface of the substrate 11, the second intrinsic layer 122 being an intrinsic amorphous silicon layer;
a second doped layer 132 on the second intrinsic layer 122, the second doped layer 132 being a P-type doped amorphous silicon layer;
The first transparent conductive layer 21 is an ITO layer doped with SnO 2, the doping amount is 0.5 weight percent, the carrier concentration is 3.0E20/cm 3, and the thickness is 90nm;
The second transparent conductive layer 22 is an ITO layer doped with SnO 2, the doping amount is 10wt%, the carrier concentration is 3.0E20/cm 3, and the thickness is 90nm;
A first electrode 31 on and in electrical contact with the first transparent conductive layer 21;
a second electrode 32 is positioned on and in electrical contact with the second transparent conductive layer 22.
In the PVD process of the first transparent conductive layer 21, the flow rate of O 2 in the introduced gas was 4%. The pressure of the deposition chamber was 0.55Pa, and the flow rate of O 2 in the gas introduced during the PVD process of the second transparent conductive layer 22 was 4.5%. The deposition chamber pressure was 0.45Pa.
Example 1:
referring to fig. 3, the solar cell in this embodiment is a heterojunction cell, which includes:
A substrate 11, including a first surface and a second surface which are oppositely arranged, wherein the substrate is doped with N type;
A first intrinsic layer 121 on the first surface of the substrate 11, the first intrinsic layer 121 being an intrinsic amorphous silicon layer;
The first doped layer 131 is located on the first intrinsic layer 121, and the first doped layer 131 is an N-type doped amorphous silicon layer;
A second intrinsic layer 122 on the second surface of the substrate 11, the second intrinsic layer 122 being an intrinsic amorphous silicon layer;
a second doped layer 132 on the second intrinsic layer 122, the second doped layer 132 being a P-type doped amorphous silicon layer;
The first transparent conductive layer 21 includes a first optical advantage layer (inner transparent conductive layer) 211 laminated on the first doping layer 131 and a first electrode contact layer (outer transparent conductive layer) 212 laminated on the first optical advantage layer, wherein the first optical advantage layer 211 is an ITO layer doped with SnO 2, the doping amount is 0.5wt%, the carrier concentration is 1.1E20/cm 3, the mobility is 70cm 2/v·s, the thickness is 85nm, the first electrode contact layer 212 is an ITO layer doped with SnO 2, the doping amount is 10wt%, the carrier concentration is 2.5E20/cm 3, the mobility is 50cm 2/v·s, and the thickness is 12.5nm;
The second transparent conductive layer 22 is an ITO layer doped with SnO 2, the doping amount is 10wt%, the carrier concentration is 3.0E20/cm 3, and the thickness is 90nm;
A first electrode 31 on and in electrical contact with the first electrode contact layer 212;
a second electrode 32 is positioned on and in electrical contact with the second electrode contact layer 222.
In the PVD process of the first optically advantageous layer 211, the flow of O 2 in the gas introduced was 3.5%. The pressure of the deposition chamber was 0.8Pa, the temperature of the deposition chamber was 170 ℃, and the flow rate of O 2 in the gas introduced during the PVD process of the first electrode contact layer 212 was 2%. The pressure of the deposition chamber was 0.55Pa and the temperature of the deposition chamber was 145 ℃.
Example 2:
referring to fig. 4, the solar cell in this embodiment is a heterojunction cell, which includes:
A substrate 11, including a first surface and a second surface which are oppositely arranged, wherein the substrate is doped with N type;
A first intrinsic layer 121 on the first surface of the substrate 11, the first intrinsic layer 121 being an intrinsic amorphous silicon layer;
The first doped layer 131 is located on the first intrinsic layer 121, and the first doped layer 131 is an N-type doped amorphous silicon layer;
A second intrinsic layer 122 on the second surface of the substrate 11, the second intrinsic layer 122 being an intrinsic amorphous silicon layer;
a second doped layer 132 on the second intrinsic layer 122, the second doped layer 132 being a P-type doped amorphous silicon layer;
The first transparent conductive layer 21 includes a first optical advantage layer (inner transparent conductive layer) 211 laminated on the first doping layer 131 and a first electrode contact layer (outer transparent conductive layer) 212 laminated on the first optical advantage layer, wherein the first optical advantage layer 211 is an ITO layer doped with SnO 2, the doping amount is 0.5wt%, the carrier concentration is 1.1E20/cm 3, the mobility is 70cm 2/v·s, the thickness is 75nm, the first electrode contact layer 212 is an ITO layer doped with SnO 2, the doping amount is 0.5wt%, the carrier concentration is 2.5E20/cm 3, the mobility is 50cm 2/v·s, and the thickness is 20nm;
The second transparent conductive layer 22 comprises a second optical advantage layer (inner transparent conductive layer) 221 laminated on the second doped layer 132 and a second electrode contact layer (outer transparent conductive layer) 222 laminated on the second optical advantage layer, wherein the second optical advantage layer 221 is an ITO layer doped with SnO 2, the doping amount is 0.5wt%, the carrier concentration is 1.1E20/cm 3, the mobility is 70cm 2/V.s, the thickness is 75nm, the second electrode contact layer 222 is an ITO layer doped with SnO 2, the doping amount is 0.5wt%, the carrier concentration is 2.5E20/cm 3, the mobility is 50cm 2/V.s, the thickness is 20nm, and the ratio of the mobility of the second electrode contact layer 222 to the mobility of the second optical advantage layer 221 is 0.71:1;
A first electrode 31 on and in electrical contact with the first electrode contact layer 212;
a second electrode 32 is positioned on and in electrical contact with the second electrode contact layer 222.
In the PVD process of the first optically advantageous layer 211, the flow of O 2 in the gas introduced was 3.5%. The pressure of the deposition chamber was 0.8Pa, the temperature of the deposition chamber was 170 ℃, and the flow rate of O 2 in the gas introduced during the PVD process of the first electrode contact layer 212 was 2%. The pressure of the deposition chamber is 0.55Pa, and the temperature of the deposition chamber is 145 ℃;
In the PVD process of the second optically advantageous layer 221, the flow rate of O 2 in the gas introduced was 3.5%. The pressure of the deposition chamber was 0.8Pa, the temperature of the deposition chamber was 170 ℃, and the flow rate of O 2 in the gas introduced during the PVD process of the second electrode contact layer 222 was 2%. The pressure of the deposition chamber was 0.55Pa and the temperature of the deposition chamber was 145 ℃.
The performance parameters of the heterojunction cells of the comparative example and the present example were tested as follows:
It can be seen that the open circuit voltage Voc and the fill factor FF of the cell were comparable to those of the comparative example by the design of the front TCO layer in example 1, and the current density Jsc and the efficiency Eta were improved to some extent.
In example 2, by optimizing the structure, thickness, mobility, etc. of the back TCO layer, the open circuit voltage Voc (passivation performance) was comparable to that of the comparative example, the fill factor FF was increased by 0.23%, the current density Jsc was increased by 0.52mA/cm 2, and the efficiency Eta was increased by 0.40%.
The technical scheme shows that the utility model has the following beneficial effects:
According to the utility model, by optimizing the structure, thickness, mobility and the like of the transparent conductive layer on the back of the battery, higher optical gain and electrical gain can be obtained, and the photoelectric conversion efficiency of the solar battery is effectively improved.
It will be evident to those skilled in the art that the utility model is not limited to the details of the foregoing illustrative embodiments, and that the present utility model may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (10)
1. A solar cell, the solar cell comprising:
The photoelectric conversion unit comprises a light receiving surface and a backlight surface which are oppositely arranged;
The transparent conductive layer comprises a first transparent conductive layer positioned on the light receiving surface of the photoelectric conversion unit and a second transparent conductive layer positioned on the backlight surface of the photoelectric conversion unit;
An electrode comprising a first electrode in electrical contact with the first transparent conductive layer and a second electrode in electrical contact with the second transparent conductive layer;
The second transparent conductive layer comprises a second optical advantage layer and a second electrode contact layer which are sequentially laminated on the backlight surface of the photoelectric conversion unit, the thickness of the second electrode contact layer is larger than or equal to 15nm, and the mobility of the second electrode contact layer is smaller than that of the second optical advantage layer.
2. The solar cell according to claim 1, wherein the thickness of the second transparent conductive layer is 80 nm-120 nm, the thickness of the second optically dominant layer is 30 nm-100 nnm, and the thickness of the second electrode contact layer is 15 nm-50 nm.
3. The solar cell according to claim 1, wherein the ratio of the mobility of the second electrode contact layer to the mobility of the second optically dominant layer is (0.7-0.9): 1, and/or,
The mobility of the second optically dominant layer was 35cm 2/V·s～100cm2/V.s, and the mobility of the second electrode contact layer was 25cm 2/V·s～90cm2/V.s.
4. The solar cell of claim 1, wherein the carrier concentration of the second electrode contact layer is greater than the carrier concentration of the second optically dominant layer.
5. The solar cell according to claim 4, wherein the carrier concentration of the second electrode contact layer is 2.0E20/cm 3～4.0E20/cm3 and the carrier concentration of the second optically dominant layer is 0.2E20/cm 3～2.0E20/cm3.
6. The solar cell according to claim 1, wherein the transparent conductive layer is any one of an ITO layer, an IWO layer, an IMO layer, an AZO layer, and a GZO layer.
7. The solar cell according to claim 1, wherein the first transparent conductive layer includes a first optically advantageous layer and a first electrode contact layer sequentially laminated on the light receiving surface of the photoelectric conversion unit.
8. The solar cell according to claim 7, wherein the first electrode contact layer has a thickness of 15nm or more, the first electrode contact layer has a mobility smaller than a mobility of the first optically advantageous layer, and/or,
The carrier concentration of the first electrode contact layer is greater than the carrier concentration of the first optically dominant layer.
9. The solar cell according to claim 7, wherein the first transparent conductive layer has a thickness of 80nm to 120nm, the first optically dominant layer has a thickness of 30nm to 100nnm, the first electrode contact layer has a thickness of 15nm to 50nm, and/or,
The ratio of the mobility of the first electrode contact layer to the mobility of the first optically advantageous layer is (0.7-0.9): 1, and/or,
The mobility of the first optically dominant layer is 35cm 2/V·s～100cm2/V.s, the mobility of the first electrode contact layer is 25cm 2/V·s～90cm2/V.s, and/or,
The carrier concentration of the first electrode contact layer is 2.0E20/cm 3～4.0E20/cm3, and the carrier concentration of the first optically dominant layer is 0.2E20/cm 3～2.0E20/cm3.
10. The solar cell according to claim 1, wherein the solar cell is a heterojunction cell, and the photoelectric conversion unit comprises:
The substrate comprises a first surface and a second surface which are oppositely arranged, and the substrate is doped with N type or P type;
a first intrinsic layer on the first surface of the substrate, the first intrinsic layer being an intrinsic amorphous silicon layer and/or an intrinsic microcrystalline silicon layer;
the first doped layer is positioned on the first intrinsic layer, and is an amorphous silicon layer and/or a microcrystalline silicon layer, and the doping type of the first doped layer is the same as that of the substrate;
The second intrinsic layer is positioned on the second surface of the substrate and is an intrinsic amorphous silicon layer and/or an intrinsic microcrystalline silicon layer;
The second doped layer is positioned on the second intrinsic layer, and is an amorphous silicon layer and/or a microcrystalline silicon layer, and the doping type of the second doped layer is opposite to that of the substrate.
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