CN102938429A - Antireflection heterojunction solar cell and preparation method thereof - Google Patents
Antireflection heterojunction solar cell and preparation method thereof Download PDFInfo
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- CN102938429A CN102938429A CN2012104275305A CN201210427530A CN102938429A CN 102938429 A CN102938429 A CN 102938429A CN 2012104275305 A CN2012104275305 A CN 2012104275305A CN 201210427530 A CN201210427530 A CN 201210427530A CN 102938429 A CN102938429 A CN 102938429A
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Abstract
The invention discloses an antireflection heterojunction solar cell and a preparation method thereof. The cell comprises a silicon chip substrate, a passivation layer, a back electrode, an emission layer, a transparent conducting thin film layer, an antireflection layer and a front electrode. The method includes using a hydrogen fluoride (HF) solution to clean the surface of the silicon chip substrate; depositing the passivation layer on the back surface of the silicon chip substrate; depositing the back electrode on the surface of the passivation layer by using a magnetron sputtering method; depositing the emission layer on the right surface of the silicon chip substrate; depositing the transparent conducting thin film layer on the emission layer by using the magnetron sputtering method; depositing the antireflection layer on the transparent conducting thin film layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and printing the front electrode on the antireflection layer through a silk screen. According to the antireflection heterojunction solar cell and the preparation thereof, an Si3N4 layer and a transparent metallic oxide layer are used to reduce light reflection of the surface of the cell, large textures on the surface of the cell are prevented, high-quality silicone thin film layers can be obtained, good silicon thin film/crystalline silicon interfaces are formed, electric current density and open-circuit voltage of the cell can be improved, and conversion efficiencies of the heterojunction solar cell are improved.
Description
Technical field
What the present invention relates to is a kind of heterojunction solar battery and preparation method thereof, in particular a kind of antireflective heterojunction solar battery and preparation method thereof.
Background technology
The thin film silicon/crystalline silicon heterojunction solar cell is a kind of high efficiency crystalline silicon solar cell that can adopt low-cost realization.This solar cell has conversion efficiency height, temperature coefficient is low, manufacturing process is simple, the low temperature process energy consumption is little characteristics.
Electrical machinery of Japanese sanyo begins one's study with the amorphous silicon membrane of intrinsic layer/silicon/crystalline silicon heterogenous joint solar cell (HIT battery) from nineteen ninety the earliest.Be the highest level in the world at usable area (100cm2) acquisition battery conversion efficiency 23% in 2009.Volume production battery average efficiency reaches 19.7%, surpasses present monocrystalline silicon battery efficient.At home, graduate school of the Chinese Academy of Sciences adopts the nanocrystalline silicon/crystalline silicon heterojunction structure that is different from the HIT of Sanyo structure under the support of " 15 " 973 projects, fall under the condition of light in single face knot, nothing, realize the breakthrough of conversion efficiency 17.3%, be the international most advanced level of similar battery at that time.
The way that thin film silicon/crystalline silicon heterojunction solar battery generally adopts Surface Texture to form matte reduces the reflection of battery surface light, and the silicon chip substrate after the texture has higher defect state density, forms easily the complex centre of charge carrier; And matte can be to depositing the silicon thin film the form of quality adverse effect on it subsequently, be difficult to obtain high-quality silicon membrane layer and good silicon thin film/crystal silicon interface, the passivation difficulty is large, has affected the open circuit voltage of hetero-junction solar cell, has so just hindered the further lifting of battery efficiency.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of antireflective heterojunction solar battery and preparation method thereof is provided, satisfy the requirement at less surface reflection, high quality silicon thin layer and good silicon thin film/crystal silicon interface.
Technical scheme: the present invention is achieved by the following technical solutions, and battery of the present invention comprises silicon chip substrate, passivation layer, back electrode, emission layer, transparent conductive film layer, anti-reflection layer and front electrode; Wherein: deposit passivation layer on the back of the body surface of silicon chip substrate, back electrode is deposited on the passivation layer, deposits emission layer on the front surface of silicon chip substrate, deposit transparent conductive membrane layer on the emission layer, deposit at least one deck anti-reflection layer on the transparent conductive film layer, front electrode is set on the anti-reflection layer.
Described silicon chip substrate is N-shaped or p-type, and selecting resistivity is 1～10 Ω cm monocrystalline silicon or polysilicon.
Described passivation layer is the silicon thin film of single or multiple lift, and wherein one deck silicon thin film is identical with the doping type of silicon chip substrate at least, and the thickness of passivation layer is 20～50nm.
Described back electrode is aluminium film, or conductive membrane layer and the film formed multilayer film of metallic aluminium.
Described emission layer is the silicon thin film of single or multiple lift, and wherein one deck silicon thin film is opposite with the doping type of silicon chip substrate at least, and the thickness of emission layer is 10～40nm.
Described anti-reflection layer is monofilm or multilayer film, and anti-reflection layer is S
3N
4Layer, thickness is 70～100nm.
Described transparent conductive film layer, material is metal oxide, thickness is 50～80nm.
Described silicon thin film is selected from one or more in amorphous silicon, microcrystal silicon, amorphous silicon germanium, noncrystalline silicon carbide and the nano-silicon.
A kind of preparation method of antireflective heterojunction solar battery may further comprise the steps:
(1) use HF solution that silicon chip substrate is carried out surface clean;
(2) utilize PECVD method deposit passivation layer on the back of the body surface of silicon chip substrate;
(3) utilize magnetically controlled sputter method deposition back electrode in passivation layer surface;
(4) front surface in silicon chip substrate utilizes PECVD method deposition emission layer;
(5) utilize magnetron sputtering deposition transparent conductive film layer at emission layer;
(6) utilize PECVD method deposition anti-reflection layer at the transparent conductive film layer;
(7) electrode before anti-reflection layer is by silk screen printing, and with front electrode sintering on conductive membrane layer.
Beneficial effect: the present invention has the following advantages compared to existing technology, and the present invention adopts transparent conductive film layer and the anti-reflection layer structure of one deck at least, utilizes Si
3N
4Layer and transparent metal oxide layer reduce the light reflection of battery surface, avoid battery surface that larger texture is arranged, be conducive to obtain high-quality silicon membrane layer, form good silicon thin film/crystal silicon interface, can improve current density and the open circuit voltage of battery, thereby improve the conversion efficiency of the hetero-junction solar cell sun.
Description of drawings
Fig. 1 is structural representation of the present invention.
Embodiment
The below elaborates to embodiments of the invention, and present embodiment is implemented under take technical solution of the present invention as prerequisite, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, the present embodiment battery comprises silicon chip substrate 1, passivation layer 2, back electrode 3, emission layer 4, transparent conductive film layer 5, anti-reflection layer 6 and front electrode 7; Wherein: deposit passivation layer 2 on the back of the body surface of silicon chip substrate 1, back electrode 3 is deposited on the passivation layer 2, deposition emission layer 4 on the front surface of silicon chip substrate 1, deposit transparent conductive membrane layer 5 on the emission layer 4, deposit at least one deck anti-reflection layer 6 on the transparent conductive film layer 5, front electrode 7 is set on the anti-reflection layer 6.
The preparation method of the antireflective heterojunction solar battery of present embodiment may further comprise the steps:
(1) selecting thickness is 200 μ m, resistivity be the N-shaped monocrystalline silicon piece of 5 Ω cm as silicon chip substrate 1, use HF solution that silicon chip substrate 1 is carried out surface clean;
(2) utilize the heavily doped amorphous silicon layer of PECVD (plasma enhanced CVD) method deposition 20nm thickness as passivation layer 2 on the back of the body surface of silicon chip substrate 1;
(3) utilize magnetically controlled sputter method plated metal aluminium film as back electrode 3 on passivation layer 2 surfaces;
(4) utilize the PECVD method to deposit successively the p-type amorphous silicon layer of the intrinsic amorphous silicon layer of 5nm thickness and 10nm thickness as emission layer 4 at the front surface of silicon chip substrate 1;
(5) utilize magnetron sputtering deposition transparent conductive film layer 5 at emission layer 4, material is ITO (tin indium oxide), and thickness is 50nm;
(6) utilize PECVD method deposition one deck Si at transparent conductive film layer 5
3N
4As anti-reflection layer 6, thickness is 70nm;
(7) electrode 7 before anti-reflection layer 6 is by silk screen printing, and with front electrode 7 sintering on conductive membrane layer.
The preparation method of the antireflective heterojunction solar battery of present embodiment may further comprise the steps:
(1) selecting thickness is 200 μ m, resistivity be the p-type monocrystalline silicon piece of 8 Ω cm as silicon chip substrate 1, use HF solution that silicon chip substrate 1 is carried out surface clean;
(2) utilize the heavily doped amorphous silicon germanium layer of PECVD (plasma enhanced CVD) method deposition 30nm thickness as passivation layer 2 on the back of the body surface of silicon chip substrate 1;
(3) utilize magnetically controlled sputter method deposition layer of conductive film layer ZnO (zinc oxide) and layer of metal aluminium film as back electrode 3 on passivation layer 2 surfaces;
(4) front surface in silicon chip substrate 1 utilizes the N-shaped amorphous silicon layer of PECVD method deposition 20nm thickness as emission layer 4;
(5) utilize magnetron sputtering deposition transparent conductive film layer 5 at emission layer 4, material is ZnO (zinc oxide), and thickness is 70nm;
(6) utilize PECVD method deposition one deck S at transparent conductive film layer 5
3N
4As anti-reflection layer 6, thickness is 80nm;
(7) electrode 7 before anti-reflection layer 6 is by silk screen printing, and with front electrode 7 sintering on conductive membrane layer.
Other implementation conditions are identical with embodiment 1.
The preparation method of the antireflective heterojunction solar battery of present embodiment may further comprise the steps:
(1) selecting thickness is 200 μ m, resistivity be the N-shaped monocrystalline silicon piece of 10 Ω cm as silicon chip substrate 1, use HF solution that silicon chip substrate 1 is carried out surface clean;
(2) utilize the heavily doped microcrystal silicon layer of PECVD (plasma enhanced CVD) method deposition 50nm thickness as passivation layer 2 on the back of the body surface of silicon chip substrate 1;
(3) utilize magnetically controlled sputter method plated metal aluminium film as back electrode 3 on passivation layer 2 surfaces;
(4) utilize the PECVD method to deposit successively the p-type nanometer silicon layer of the intrinsic amorphous silicon layer of 10nm thickness and 15nm thickness as emission layer 4 at the front surface of silicon chip substrate 1;
(5) utilize magnetron sputtering deposition transparent conductive film layer 5 at emission layer 4, material is ITO (tin indium oxide), and thickness is 80nm;
(6) utilize the PECVD method to deposit successively the Si of two-layer different refractivity at transparent conductive film layer 5
3N
4As anti-reflection layer 6, thickness is respectively 20nm, 60nm;
(7) electrode 7 before anti-reflection layer 6 is by silk screen printing, and with front electrode 7 sintering on conductive membrane layer.
Other implementation conditions are identical with embodiment 1.
Claims (9)
1. antireflective heterojunction solar battery, it is characterized in that this battery comprises silicon chip substrate (1), passivation layer (2), back electrode (3), emission layer (4), transparent conductive film layer (5), anti-reflection layer (6) and front electrode (7); Wherein: deposit passivation layer (2) on the back of the body surface of silicon chip substrate (1), back electrode (3) is deposited on the passivation layer (2), deposit emission layer (4) on the front surface of silicon chip substrate (1), the upper deposit transparent conductive membrane layer (5) of emission layer (4), deposit at least one deck anti-reflection layer (6) on the transparent conductive film layer (5), front electrode (7) is set on the anti-reflection layer (6).
2. antireflective heterojunction solar battery according to claim 1, it is characterized in that: described silicon chip substrate (1) is N-shaped or p-type, selecting resistivity is 1～10 Ω cm monocrystalline silicon or polysilicon.
3. antireflective heterojunction solar battery according to claim 1, it is characterized in that: described passivation layer (2) is the silicon thin film of single or multiple lift, wherein one deck silicon thin film is identical with the doping type of silicon chip substrate (1) at least, and the thickness of passivation layer (2) is 20～50nm.
4. antireflective heterojunction solar battery according to claim 1, it is characterized in that: described back electrode (3) is aluminium film, or conductive membrane layer and the film formed multilayer film of metallic aluminium.
5. antireflective heterojunction solar battery according to claim 1, it is characterized in that: described emission layer (4) is the silicon thin film of single or multiple lift, wherein one deck silicon thin film is opposite with the doping type of silicon chip substrate (1) at least, and the thickness of emission layer (4) is 10～40nm.
6. antireflective heterojunction solar battery according to claim 1, it is characterized in that: described anti-reflection layer (6) is monofilm or multilayer film, anti-reflection layer (6) is Si
3N
4Layer, thickness is 70～100nm.
7. antireflective heterojunction solar battery according to claim 1 is characterized in that: described transparent conductive film layer (5), and material is metal oxide, thickness is 50～80nm.
8. according to claim 3 or 5 described antireflective heterojunction solar batteries, it is characterized in that: described silicon thin film is selected from one or more in amorphous silicon, microcrystal silicon, amorphous silicon germanium, noncrystalline silicon carbide and the nano-silicon.
9. the preparation method of an antireflective heterojunction solar battery is characterized in that, may further comprise the steps:
(1) use HF solution that silicon chip substrate (1) is carried out surface clean;
(2) utilize PECVD method deposit passivation layer (2) on the back of the body surface of silicon chip substrate (1);
(3) utilize magnetically controlled sputter method deposition back electrode (3) on passivation layer (2) surface;
(4) front surface in silicon chip substrate (1) utilizes PECVD method deposition emission layer (4);
(5) utilize magnetron sputtering deposition transparent conductive film layer (5) at emission layer (4);
(6) utilize PECVD method deposition anti-reflection layer (6) at transparent conductive film layer (5);
(7) electrode (7) before anti-reflection layer (6) is by silk screen printing, and with front electrode (7) sintering on conductive membrane layer (5).
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957905A (en) * | 2016-06-21 | 2016-09-21 | 常州天合光能有限公司 | Crystalline silicon solar cell free of fine grid line and preparation method of crystalline silicon solar cell |
| CN106057931A (en) * | 2016-07-05 | 2016-10-26 | 安阳师范学院 | Large open-circuit voltage nano heterojunction solar energy cell and manufacturing method |
| CN108899375A (en) * | 2018-06-27 | 2018-11-27 | 研创应用材料（赣州）股份有限公司 | A kind of preparation method of silicon based hetero-junction photovoltaic cell |
| CN109155341A (en) * | 2016-04-11 | 2019-01-04 | 梅耶博格（德国）股份有限公司 | Method for manufacturing solar battery, the solar battery and block substrate manufactured with this method |
| CN110620163A (en) * | 2019-10-28 | 2019-12-27 | 成都晔凡科技有限公司 | Heterojunction solar cell, laminated tile assembly and manufacturing method thereof |
| CN110993705A (en) * | 2019-12-25 | 2020-04-10 | 中建材蚌埠玻璃工业设计研究院有限公司 | High-conversion-efficiency heterojunction device |
| CN110993743A (en) * | 2019-12-25 | 2020-04-10 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of heterojunction photovoltaic device |
| CN111416012A (en) * | 2020-05-02 | 2020-07-14 | 熵熠(上海)能源科技有限公司 | Silicon heterojunction solar cell comprising silicon nitride antireflection layer and preparation method |
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| CN112242457A (en) * | 2019-07-16 | 2021-01-19 | 单伶宝 | Patterning method of ITO film for double-sided heterojunction photovoltaic cell |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011160246A1 (en) * | 2010-06-25 | 2011-12-29 | Oerlikon Solar Ag, Trübbach | Thin film solar cell with microcrystalline absorpber layer and passivation layer and method for manufacturing such a cell |
| CN202259323U (en) * | 2011-08-22 | 2012-05-30 | 山东力诺太阳能电力股份有限公司 | Grid line-free N-type crystalline silicon solar cell |
| CN102832261A (en) * | 2011-06-13 | 2012-12-19 | 无锡尚德太阳能电力有限公司 | Thin-film solar cell comprising novel anti-reflection layer and manufacturing method thereof |
-
2012
- 2012-12-21 CN CN2012104275305A patent/CN102938429A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011160246A1 (en) * | 2010-06-25 | 2011-12-29 | Oerlikon Solar Ag, Trübbach | Thin film solar cell with microcrystalline absorpber layer and passivation layer and method for manufacturing such a cell |
| CN102832261A (en) * | 2011-06-13 | 2012-12-19 | 无锡尚德太阳能电力有限公司 | Thin-film solar cell comprising novel anti-reflection layer and manufacturing method thereof |
| CN202259323U (en) * | 2011-08-22 | 2012-05-30 | 山东力诺太阳能电力股份有限公司 | Grid line-free N-type crystalline silicon solar cell |
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| CN109155341A (en) * | 2016-04-11 | 2019-01-04 | 梅耶博格（德国）股份有限公司 | Method for manufacturing solar battery, the solar battery and block substrate manufactured with this method |
| CN109155341B (en) * | 2016-04-11 | 2023-03-14 | 梅耶博格（德国）股份有限公司 | Solar cell manufacturing method, solar cell manufactured by the method, and substrate holder |
| CN105957905A (en) * | 2016-06-21 | 2016-09-21 | 常州天合光能有限公司 | Crystalline silicon solar cell free of fine grid line and preparation method of crystalline silicon solar cell |
| CN106057931A (en) * | 2016-07-05 | 2016-10-26 | 安阳师范学院 | Large open-circuit voltage nano heterojunction solar energy cell and manufacturing method |
| CN106057931B (en) * | 2016-07-05 | 2023-07-07 | 安阳师范学院 | Large open-circuit voltage nano heterojunction solar cell and preparation method thereof |
| CN108899375A (en) * | 2018-06-27 | 2018-11-27 | 研创应用材料（赣州）股份有限公司 | A kind of preparation method of silicon based hetero-junction photovoltaic cell |
| CN112242457A (en) * | 2019-07-16 | 2021-01-19 | 单伶宝 | Patterning method of ITO film for double-sided heterojunction photovoltaic cell |
| CN110620163A (en) * | 2019-10-28 | 2019-12-27 | 成都晔凡科技有限公司 | Heterojunction solar cell, laminated tile assembly and manufacturing method thereof |
| CN110620163B (en) * | 2019-10-28 | 2024-05-24 | 通威太阳能(金堂)有限公司 | Heterojunction solar cell, laminated tile assembly and manufacturing method thereof |
| CN110993743A (en) * | 2019-12-25 | 2020-04-10 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of heterojunction photovoltaic device |
| CN110993705A (en) * | 2019-12-25 | 2020-04-10 | 中建材蚌埠玻璃工业设计研究院有限公司 | High-conversion-efficiency heterojunction device |
| CN111416012A (en) * | 2020-05-02 | 2020-07-14 | 熵熠(上海)能源科技有限公司 | Silicon heterojunction solar cell comprising silicon nitride antireflection layer and preparation method |
| CN111733399A (en) * | 2020-08-26 | 2020-10-02 | 浙江爱旭太阳能科技有限公司 | A kind of crystalline silicon solar cell coating method and coating equipment |
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Application publication date: 20130220 |