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CN218602389U - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN218602389U
CN218602389U CN202222602256.2U CN202222602256U CN218602389U CN 218602389 U CN218602389 U CN 218602389U CN 202222602256 U CN202222602256 U CN 202222602256U CN 218602389 U CN218602389 U CN 218602389U
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China
Prior art keywords
wafer
substrate
cup
modification
processing apparatus
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Application number
CN202222602256.2U
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Chinese (zh)
Inventor
相浦一博
天野嘉文
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The utility model provides a substrate processing device (1), which comprises a substrate rotating part (20) and a cup-shaped body. A substrate rotating section (20) holds and rotates the substrate. The cup-shaped body annularly covers the periphery of the substrate held by the substrate rotating part (20). The cup-shaped body has a cup-shaped body base (53), a first member (55), and a second member (56). The cup base (53) surrounds the entire circumference of the substrate rotating section (20). The first member (55) is detachably attached to the upper end of the cup base (53) and annularly surrounds the outer periphery of the substrate. The second member (56) is detachably attached to at least the inner peripheral end of the first member (55), and the surface (56 a) is hydrophobic. The substrate processing apparatus of the present invention can suppress the rebound of the processing liquid from the cup body regardless of the surface state of the substrate and the kind of the processing liquid.

Description

Substrate processing apparatus
Technical Field
The utility model discloses an embodiment relates to a substrate processing apparatus.
Background
Conventionally, a technique of performing a liquid treatment while rotating a substrate such as a semiconductor wafer (hereinafter, also referred to as a wafer) is known (see patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2014-207320
SUMMERY OF THE UTILITY MODEL
Technical problem to be solved by the utility model
The utility model provides a technique that can restrain the processing liquid from rebounding from the cup body no matter what the surface state of the substrate and the type of the processing liquid.
Technical solution for solving technical problem
The substrate processing apparatus according to one aspect of the present invention includes a substrate rotating portion and a cup-shaped body. The substrate rotation section holds and rotates the substrate. The cup-shaped body annularly covers the periphery of the substrate held by the substrate rotating part. The cup body has a cup body base, a first member, and a second member. The cup base surrounds the entire circumference of the substrate rotating unit. The first member is detachably attached to an upper end portion of the base of the cup-shaped body and annularly surrounds an outer periphery of the substrate. The second member is detachably attached to at least the inner peripheral end of the first member, and has a hydrophobic surface.
Effect of the utility model
According to the present invention, the rebound of the processing liquid from the cup-shaped body can be suppressed regardless of the surface state of the substrate and the type of the processing liquid.
Drawings
Fig. 1 is a schematic diagram showing a structure of a substrate processing apparatus according to an embodiment.
Fig. 2 is a schematic diagram showing a structure of a substrate processing apparatus according to an embodiment.
Fig. 3 is a sectional view showing the structure of the collecting unit according to the embodiment.
Fig. 4 is a perspective view showing the structure of the second member of the embodiment.
Fig. 5 is a perspective view showing the structure of the first member of the embodiment.
Fig. 6 is a sectional view showing the structure of the annular liquid discharge portion of the embodiment.
Fig. 7 is a plan view showing the structure of the annular liquid discharge portion of the embodiment.
Fig. 8 is a timing chart showing an example of the cleaning process of the annular liquid discharge portion according to the embodiment.
Fig. 9 is a timing chart showing another example of the cleaning process of the annular liquid discharge portion according to the embodiment.
Fig. 10 is a perspective view showing the structure of an exhaust duct according to the embodiment.
Fig. 11 is a sectional view showing the structure of an upper ring member according to modification 1 of the embodiment.
Fig. 12 is a sectional view showing the structure of an upper ring member according to modification 2 of the embodiment.
Fig. 13 is a sectional view showing the structure of an upper ring member according to modification 3 of the embodiment.
Fig. 14 is a sectional view showing the structure of the collecting unit according to modification 4 of the embodiment.
Fig. 15 is a sectional view showing the structure of a collecting unit according to modification 5 of the embodiment.
Fig. 16 is a sectional view showing the structure of a collecting unit according to modification 6 of the embodiment.
Fig. 17 is a sectional view showing the structure of a recovery unit according to modification 7 of the embodiment.
Fig. 18 is a sectional view showing the structure of a collecting unit according to modification 8 of the embodiment.
Fig. 19 is a perspective view showing the structure of a cover in modification 8 of the embodiment.
Fig. 20 is another perspective view showing the structure of the cover in modification 8 of the embodiment.
Fig. 21 is a perspective view showing the structure of a cover in modification 9 of the embodiment.
Fig. 22 is another perspective view showing the structure of the cover in modification 9 of the embodiment.
Fig. 23 is a perspective view showing the structure of the cover in modification 10 of the embodiment.
Fig. 24 is another perspective view showing the structure of the cover material according to modification 10 of the embodiment.
Fig. 25 is a perspective view showing the structure of a cover in modification 11 of the embodiment.
Fig. 26 is another perspective view showing the structure of the cover in modification 11 of the embodiment.
Fig. 27 is a perspective view showing the structure of a cover in modification 12 of the embodiment.
Description of the reference numerals
W wafer (an example of a substrate)
1. Substrate processing apparatus
12. Control unit
20. Substrate rotating part
32. Nozzle with a nozzle body
46. Cleaning liquid nozzle
50. Recovery unit
51. Outer cup-shaped body
51d inner surface
51d1 horizontal part
51f opening part
52. Inner cup-shaped body
52a inclined part
52b vertical part
52c outer surface
52d inner surface
53. Cup-shaped body base
53a inner surface
54. Upper ring-shaped member
55. First part
55a inner surface (an example of a hydrophilic surface)
56. Second part
56a surface (an example of a hydrophobic surface)
56b support part
56c return part
59. Covering element
59a, 59b, 59c side wall part
59d Upper wall portion
59e projection
60. Liquid bearing space
61. Air vent
62. Exhaust passage
63. Exhaust port
64. Annular liquid discharge part
64a drain outlet
64b cleaning liquid supply part
And (4) cleaning the CL.
Detailed Description
Hereinafter, embodiments of the substrate processing apparatus disclosed in the present application will be described in detail with reference to the drawings. The present invention is not limited to the embodiments described below. Note that the drawings are schematic, and the relationship between the sizes of the elements, the ratios of the elements, and the like may be different from those in reality. Further, the drawings may include portions having different dimensional relationships and ratios from each other.
In the following embodiments, the same portions are denoted by the same reference numerals, and redundant description thereof is omitted. In addition, in the drawings referred to below, a rectangular coordinate system may be shown in which the X-axis direction, the Y-axis direction, and the Z-axis direction are defined to be orthogonal to each other and the positive Z-axis direction is set to be the vertically upward direction, for ease of understanding of the description.
Conventionally, a technique of performing a liquid treatment while rotating a substrate such as a semiconductor wafer (hereinafter, also referred to as a wafer) is known. In the liquid treatment, the cup-shaped bodies disposed so as to surround the rotating substrate can collect the treatment liquid scattered from the substrate.
On the other hand, in the above-described conventional technique, there is room for further improvement in terms of suppressing the rebound of the processing liquid from the cup-shaped body. In particular, although springback of the processing liquid can be suppressed when a specific surface state of the substrate or a specific processing liquid is used, it is difficult to suppress springback of the processing liquid from the cup-shaped body when the surface state of the substrate or the type of the processing liquid is changed variously.
Therefore, a technique for suppressing the rebound of the processing liquid from the cup-shaped body regardless of the surface state of the substrate and the type of the processing liquid has been desired to solve the above-mentioned technical problems.
< integral Structure of substrate processing apparatus >
First, the structure of the substrate processing apparatus 1 according to the embodiment will be described with reference to fig. 1 and 2. Fig. 1 and 2 are schematic diagrams showing the structure of a substrate processing apparatus 1 according to an embodiment.
As shown in fig. 1 and 2, the substrate processing apparatus 1 of the embodiment includes a processing container 10, a substrate rotating unit 20, an upper surface supply unit 30, a lower surface supply unit 40, a recovery unit 50, and a heating mechanism 70.
The processing container 10 houses the substrate rotating unit 20, the upper surface supply unit 30, the lower surface supply unit 40, the recovery unit 50, and the heating mechanism 70.
The substrate rotating section 20 holds the wafer W so that the wafer W can rotate. Specifically, as shown in fig. 2, the substrate rotating section 20 includes a vacuum chuck 21, a shaft section 22, and a driving section 23. The vacuum chuck 21 holds the wafer W by suction by vacuuming. The vacuum chuck 21 has a diameter smaller than that of the wafer W, and holds the center of the lower surface of the wafer W by suction.
The shaft portion 22 horizontally supports the vacuum chuck 21 at the front end portion. The driving portion 23 is connected to the root end of the shaft portion 22. The driving portion 23 rotates the shaft portion 22 about the vertical axis, and raises and lowers the shaft portion 22 and the vacuum chuck 21 supported by the shaft portion 22.
As shown in fig. 1, the upper surface supply unit 30 supplies the processing liquid to the upper surface peripheral portion of the wafer W to etch the upper surface peripheral portion of the wafer W. This makes it possible to remove a film formed on the upper peripheral edge of the wafer W or clean the upper peripheral edge of the wafer W, for example.
The peripheral edge portion of the upper surface of the wafer W is an annular region having a width of, for example, about 1 to 5mm from the end surface on the upper surface of the wafer W.
The upper surface supply section 30 includes a nozzle arm 31, a nozzle 32, and a moving mechanism 33. The nozzle arm 31 extends in the horizontal direction (here, the Y-axis direction) and supports the nozzle 32 at its tip end.
The nozzle 32 is disposed above the wafer W with its discharge port facing downward, and discharges a treatment liquid such as a chemical liquid or a rinse liquid onto the upper surface of the wafer W. As the chemical solution, for example, hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), fluoronitric acid, or the like can be used. The fluoronitric acid refers to hydrofluoric acid (HF) and nitric acid (HNO) 3 ) The mixed solution of (2). As the rinse liquid, for example, DIW (deionized water) can be used.
The moving mechanism 33 is connected to the base end of the nozzle arm 31. The moving mechanism 33 moves the nozzle arm 31, for example, in the horizontal direction (here, the X-axis direction). Thus, the moving mechanism 33 can move the nozzle 32 between a processing position above the peripheral edge portion of the wafer W and a standby position outside the processing position.
The lower surface supply unit 40 supplies the processing liquid to the lower surface peripheral edge portion of the wafer W, thereby etching the lower surface peripheral edge portion of the wafer W. This makes it possible to remove a film formed on the lower peripheral edge of the wafer W or clean the lower peripheral edge of the wafer W, for example.
The lower peripheral edge of the wafer W is an annular region having a width of, for example, about 1 to 5mm from the end surface on the lower surface of the wafer W.
As shown in fig. 2, the lower surface supply unit 40 includes a lower surface nozzle 41, a pipe 42, a valve 43, a flow rate regulator 44, and a treatment liquid supply source 45. The lower surface nozzle 41 is disposed below the wafer W and discharges the processing liquid upward toward the lower surface peripheral edge of the wafer W.
The pipe 42 connects the lower surface nozzle 41 to the processing liquid supply source 45. The valve 43 is provided in a middle portion of the pipe 42, and opens and closes the pipe 42. The flow rate regulator 44 is provided in a middle portion of the pipe 42, and regulates a flow rate of the treatment liquid flowing through the pipe 42. The treatment liquid supply source 45 is, for example, a tank for storing the treatment liquid.
The lower surface supply unit 40 may include a moving mechanism for moving the lower surface nozzle 41 in the horizontal direction. In this case, the lower surface supply unit 40 can move the lower surface nozzle 41 between a processing position below the wafer W and a standby position outside the wafer W.
The recovery unit 50 is disposed so as to surround the outer side of the wafer W, and recovers droplets of the processing liquid scattered from the wafer W. In the embodiment, the recovery unit 50 is provided with the outer cup 51 and the inner cup 52 so as to receive droplets scattered from the wafer W without omission. The outer cup 51 is an example of a cup.
The outer cup 51 annularly covers the periphery of the wafer W held by the substrate rotating unit 20. The outer cup 51 is provided so as to surround, for example, the side of the wafer W and surround the upper portion of the wafer W on the outer side.
The inner cup 52 is disposed inside the outer cup 51 and below the wafer W held by the substrate rotating unit 20. The inner cup 52 is disposed outside the heating mechanism 70, for example.
The outer cup 51 and the inner cup 52 are made of a material having high chemical resistance, such as a fluororesin, such as PTFE (polytetrafluoroethylene) or PFA (perfluoroalkoxyalkane).
In addition, the substrate processing apparatus 1 sucks the gas around the wafer W from the recovery unit 50 by using the pump 80 (see fig. 3), thereby efficiently recovering the droplets scattered from the periphery of the wafer W. The details of the gas suction mechanism will be described later.
The heating mechanism 70 is disposed below the wafer W and outside the substrate rotating unit 20. Specifically, the heating mechanism 70 is disposed between the substrate rotating unit 20 and the inner cup 52.
The heating mechanism 70 heats the peripheral portion of the lower surface of the wafer W held by the substrate rotating unit 20 by supplying the heated fluid to the lower surface of the wafer W. Specifically, as shown in fig. 1, the heating mechanism 70 includes a plurality of release ports 71 arranged in a row in the circumferential direction of the wafer W, and the heated fluid is supplied to the lower surface of the wafer W from the plurality of release ports 71.
In addition, the substrate processing apparatus 1 of the embodiment includes a control device 11. The control device 11 is, for example, a computer, and includes a control unit 12 and a storage unit 13.
The storage unit 13 is realized by, for example, a semiconductor Memory device such as a RAM or a Flash Memory (Flash Memory), or a storage device such as a hard disk or an optical disk, and stores a program for controlling various processes executed in the substrate processing apparatus 1.
The control Unit 12 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input/output port, and various circuits. The control unit 12 reads out and executes the program stored in the storage unit 13 to control the operation of the substrate processing apparatus 1.
The program may be recorded in a computer-readable storage medium, and may be installed from the storage medium to the storage unit 13 of the control device 11. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
< embodiment >
Next, the detailed configuration and operation of the substrate processing apparatus 1 according to the embodiment will be described with reference to fig. 3 to 10. Fig. 3 isbase:Sub>A sectional view showing the structure of the collecting section 50 of the embodiment, specifically, an axial sectional view taken along linebase:Sub>A-base:Sub>A shown in fig. 1.
As shown in fig. 3, the recovery unit 50 includes an outer cup 51, an inner cup 52, a liquid receiving space 60, an exhaust hole 61, an exhaust passage 62, an exhaust port 63, and an annular liquid discharge unit 64. Further, the exhaust port 63 is connected to a pump 80.
In the substrate processing apparatus 1, the pump 80 is operated to exhaust the liquid receiving space 60 formed by the outer cup 51 and the inner cup 52 through the exhaust hole 61, the exhaust passage 62, and the exhaust port 63. Thus, the substrate processing apparatus 1 can exhaust the periphery of the wafer W through the liquid receiving space 60 formed by the outer cup 51 and the inner cup 52.
The outer cup 51 is provided so as to surround the outer side of the wafer W and the upper side of the wafer W. The outer cup 51 has a cup base 53, an upper ring member 54, and an O-ring 57.
The cup base 53 surrounds the entire circumference of the substrate rotating unit 20 at the outermost circumference of the recovery unit 50. The cup base 53 is substantially vertically raised to the same height as the upper end of the inner cup 52.
The upper ring member 54 is provided so as to surround the outer upper portion of the wafer W. The upper ring member 54 is inclined so as to become higher toward the inside (i.e., toward the wafer W) from the upper end of the cup base 53.
The O-ring 57 is provided between the upper annular member 54 and the cup base 53, and seals the space between the upper annular member 54 and the cup base 53. In the present invention, the space between the upper ring member 54 and the cup base 53 may be sealed by a member other than an O-ring.
The upper annular member 54 includes a first member 55 and a second member 56. The first member 55 is detachably attached to the upper end of the cup base 53, and annularly surrounds the outer periphery of the wafer W. The inner surface 55a of the first member 55 is hydrophilic and inclined along an inclined portion 52a of an inner cup 52 described later. That is, the inner surface 55a of the first member 55 is a hydrophilic surface.
In the present invention, the phrase "the surface has hydrophilicity" means that the contact angle of the treatment liquid adhering to the surface is 90 ° or less, and the phrase "the surface has hydrophobicity" means that the contact angle of the treatment liquid adhering to the surface is 90 ° or more.
The second member 56 is detachably attached to at least the inner peripheral end of the first member 55, and the surface 56a is hydrophobic. That is, the surface 56a of the second member 56 is a hydrophobic surface. The second member 56 has a support portion 56b and a return portion 56c.
The support portion 56b is a portion supported by the first member 55, and is supported, for example, by an upper end portion of the first member 55. The returning portion 56c is bent downward by a predetermined width (for example, about 3 (mm)) from the inner peripheral end of the supporting portion 56b, and extends in a direction approaching the peripheral edge of the wafer W.
The lower end portion of the returning portion 56c is disposed at a position higher by a given height (for example, about 2 (mm)) with respect to the height at which the wafer W is located. The lower end of the returning section 56c is provided on the outer peripheral side of the wafer W at a predetermined distance (for example, about 5 (mm)) in the horizontal direction from the peripheral edge thereof.
By providing a gap of a predetermined size between the peripheral edge of the wafer W and the lower end of the return portion 56c in this manner, the space in which the upper surface of the wafer W is exposed can be connected to the liquid receiving space 60 formed by the outer cup 51 and the inner cup 52.
In the embodiment, the surface 56a of the second member 56, which is located on the side of the wafer W and on which the processing liquid scattered from the wafer W directly collides, has hydrophobic properties. This can prevent droplets of the processing liquid adhering to the second member 56 from being aggregated and becoming larger. Therefore, according to the embodiment, it is possible to prevent the processing liquid newly scattered from the wafer W from rebounding to the wafer W due to the impact of the processing liquid on the large droplets.
Further, in the embodiment, the first member 55 and the second member 56, which directly receive the processing liquid scattered from the wafer W, are both configured to be attachable to and detachable from the other adjacent members.
Accordingly, even when the surface condition of the wafer W and the type of the processing liquid are changed to various types in the substrate processing apparatus 1, the rebound of the processing liquid onto the wafer W can be suppressed by optimizing the surface conditions of the first member 55 and the second member 56 with respect to the changed parameters.
Therefore, according to the embodiment, the rebound of the processing liquid from the outer cup 51 can be suppressed regardless of the surface state of the wafer W or the type of the processing liquid.
In the embodiment, the inner surface 55a of the first member 55 as the inclined surface may be hydrophilic. This can prevent the processing liquid scattered from the wafer W and adhering to the inner surface 55a of the first member 55 from remaining on the inner surface 55a.
Therefore, according to the embodiment, the processing liquid remaining on the inner surface 55a can be prevented from flowing backward to the wafer W, and therefore contamination of the wafer W by the processing liquid flowing backward can be prevented.
In addition, in the embodiment, the inner surface 53a of the cup base 53 may be hydrophobic. This allows the processing liquid that has reached the inner surface 53a of the cup-shaped body base 53 to smoothly flow to the annular liquid discharge portion 64 located below the inner surface 53 a.
In the embodiment, the second member 56 closest to the wafer W in the outer cup 51 may have the returning portion 56c. This allows a gap of a predetermined size to be formed between the peripheral edge of the wafer W and the outer cup 51, thereby allowing smooth evacuation of the gas around the wafer W through the liquid receiving space 60.
Further, in the embodiment, since the second member 56 has the returning portion 56c, the areas of the first member 55 and the second member 56 near the peripheral edge portion of the wafer W can be reduced. This can reduce the amount of the treatment liquid adhering to the first member 55 and the second member 56.
Therefore, according to the embodiment, the processing liquid remaining on the inner surface 55a of the first member 55 and the front surface 56a of the second member 56 can be prevented from flowing backward to the wafer W, and therefore contamination of the wafer W by the processing liquid flowing backward can be prevented.
Fig. 4 is a perspective view showing the structure of the second member 56 of the embodiment. As shown in fig. 4, the return portion 56c of the second member 56 of the embodiment is annularly provided along the peripheral edge portion of the wafer W.
The return portion 56c of the embodiment has an opening 56d for flowing the scattered processing liquid supplied from the nozzle 32 to the first member 55.
This can prevent the scattered processing liquid supplied from the nozzle 32 from directly colliding with the return portion 56c. Therefore, according to the embodiment, the rebound of the processing liquid from the returning section 56c can be suppressed.
The opening 56d may be formed, for example, from the vicinity of the nozzle 32 in the second member 56 to a position where the scattered processing liquid supplied from the nozzle 32 does not directly collide. This can suppress the rebound of the processing liquid from the returning section 56c and the backflow of the processing liquid from the inner surface 55a of the first member 55.
Therefore, according to the embodiment, contamination of the wafer W by the processing liquid scattered from the wafer W can be further suppressed.
Fig. 5 is a perspective view showing the structure of the first member 55 of the embodiment. As shown in fig. 5, a plurality of grooves 55b are provided on an inner surface 55a of the first member 55 of the embodiment. The grooves 55b are formed along the direction in which the processing liquid supplied to the rotating wafer W flows to be scattered outward.
This allows the processing liquid adhering to the inner surface 55a of the first member 55 to be smoothly guided to the annular liquid discharge portion 64 by the spiral flow of the wafer W.
Further, by providing the plurality of grooves 55b on the inner surface 55a, it is possible to suppress the droplets of the processing liquid adhering to the inner surface 55a from being accumulated and becoming large. Therefore, according to the embodiment, it is possible to prevent the processing liquid newly scattered from the wafer W from rebounding to the wafer W due to the impact of the processing liquid on the large droplets.
The explanation returns to fig. 3. The inner cup 52 is provided inside the outer cup 51 along the inner surface of the outer cup 51 (the inner surface 53a of the cup base 53 and the inner surface 55a of the first member 55).
That is, the inner cup 52 has an inclined portion 52a provided along an inner surface 55a of the first member 55 as an inclined surface, and a vertical portion 52b provided along an inner surface 53a of the cup base portion 53 as a vertical surface.
The inclined portion 52a gradually descends from the vicinity of the peripheral edge of the wafer W toward the outside. The vertical portion 52b extends in a substantially vertical direction from the outer peripheral end of the inclined portion 52a downward.
The liquid receiving space 60 is formed between the outer cup 51 and the inner cup 52. The air vent 61 is formed to penetrate the inner cup 52. The exhaust passage 62 is formed inside the inner cup 52.
The exhaust passage 62 is formed between the inner cup 52 and the wall portion 58 located inside and below the inner cup 52, for example. The exhaust passage 62 is connected to the liquid receiving space 60 through the exhaust hole 61.
The exhaust port 63 is connected to the exhaust passage 62. The exhaust port 63 is provided at a predetermined position of the wall portion 58, for example. The exhaust port 63 may be provided at one location or a plurality of locations on the wall portion 58. Further, details of the exhaust duct 100 (see fig. 10) on the downstream side of the exhaust port 63 will be described later.
The annular drain portion 64 is formed between the outer cup 51 and the inner cup 52 (e.g., between the lower end of the outer cup 51 and the lower end of the inner cup 52). The annular liquid discharge portion 64 discharges the processing liquid supplied to the wafer W to the outside. Details of the annular liquid discharge portion 64 will be described later.
Here, in the embodiment, the air vent hole 61 is formed obliquely downward from the outer surface 52c to the inner surface 52d of the inner cup-shaped body 52. This makes it possible to smooth the flow of the gas from the liquid bearing space 60 to the exhaust passage 62, and thus to efficiently exhaust the gas around the wafer W.
Therefore, according to the embodiment, contamination of the wafer W by mist of the processing liquid or the like staying around the wafer W can be suppressed.
In the embodiment, the exhaust hole 61 may be disposed in the vertical portion 52b of the inner cup 52. This can prevent the processing liquid falling along the outer surface 52c of the inner cup 52 from flowing to the gas discharge hole 61 without flowing to the annular liquid discharge portion 64.
Therefore, according to the embodiment, the processing liquid falling along the inner cup 52 can be separated well.
Fig. 6 is a sectional view showing the structure of the annular liquid discharge portion 64 of the embodiment, and fig. 7 is a plan view showing the structure of the annular liquid discharge portion 64 of the embodiment. As shown in fig. 7, the annular liquid discharge portion 64 is annular (for example, annular) in plan view.
Further, a drain port 64a is provided on the bottom surface of the annular drain portion 64 at a predetermined position. The drain port 64a is connected to the drain DR via a drain line 90.
In the embodiment, as shown in fig. 6 and the like, the cleaning liquid nozzle 46 is provided in the lower surface supply unit 40. The cleaning liquid nozzle 46 is provided in the vicinity of the lower surface nozzle 41, and discharges the cleaning liquid CL in a downward direction.
The cleaning liquid CL discharged from the cleaning liquid nozzle 46 is supplied to the cleaning liquid supply portion 64b of the annular liquid discharge portion 64 through the groove portion 47 formed in the inner cup 52. The cleaning liquid CL of the embodiment is, for example, DIW.
Further, as shown in fig. 7, since the cleaning liquid nozzle 46 is provided at a position facing the liquid discharge port 64a, the cleaning liquid supply portion 64b is provided at a position facing the liquid discharge port 64a.
Here, in the embodiment, the liquid discharge port 64a is provided at the lowest position and the cleaning liquid supply portion 64b is provided at the highest position in the annular liquid discharge portion 64. The annular liquid discharge portion 64 is formed to gradually decrease from the cleaning liquid supply portion 64b toward the liquid discharge port 64a.
Thus, the cleaning liquid CL supplied from the cleaning liquid nozzle 46 to the cleaning liquid supply portion 64b flows through the entire annular liquid discharge portion 64 and is discharged from the liquid discharge port 64a, as shown in fig. 7. That is, in the embodiment, the cleaning liquid CL is supplied to the cleaning liquid supply portion 64b from the cleaning liquid nozzle 46 provided at a position facing the liquid discharge port 64a, whereby the entire annular liquid discharge portion 64 can be cleaned satisfactorily.
In the embodiment, the cleaning liquid nozzle 46 is operated to clean the annular liquid discharge portion 64, so that the amount of mist of the treatment liquid staying in the liquid receiving space 60 can be reduced. Therefore, according to the embodiment, the mist staying in the liquid receiving space 60 can be prevented from flowing backward and contaminating the wafer W.
Fig. 8 is a timing chart showing an example of the cleaning process of the annular liquid discharge portion 64 according to the embodiment. As shown in fig. 8, in the substrate processing apparatus 1 (see fig. 1), various processes are performed on one wafer W.
For example, the control unit 12 (see fig. 1) first performs a transport process of carrying out the wafers W from the process container 10 (see fig. 1) after the completion of the various processes and carrying out the next wafer W into the process container 10 (step S101).
Next, the control unit 12 performs various liquid processes on the peripheral edge portion of the wafer W loaded into the processing container 10 (step S102). Then, the control unit 12 performs a rinsing process on the wafer W subjected to the various liquid processes (step S103). The rinsing process is performed by supplying DIW to the wafer W from the nozzle 32 and the lower surface nozzle 41, for example.
Next, the control unit 12 performs a drying process on the wafer W subjected to the rinsing process (step S104). The drying process is performed by, for example, rotating the wafer W at a high speed.
Finally, the control unit 12 performs a transfer process of transferring the wafer W having completed each process from the process container 10 and transferring the next wafer W into the process container 10 (step S105).
In the example of fig. 8, the controller 12 performs the cleaning process of the annular liquid discharge portion 64 and the transport process of the wafer W (steps S101 and S105) in parallel (step S111).
By performing the cleaning process of the annular liquid discharge portion 64 in parallel with the transport process of the wafer W in this way, contamination of the wafer W can be suppressed even if the amount of mist of the processing liquid remaining in the liquid receiving space 60 during the cleaning process of the liquid discharge portion temporarily increases.
Fig. 9 is a timing chart showing another example of the cleaning process of the annular liquid discharge portion 64 according to the embodiment. In the example of fig. 9, the controller 12 performs the cleaning process of the annular liquid discharge portion 64 and the rinsing process of the wafer W (step S103) in parallel (step S121). In the example of fig. 9, for example, DIW is simultaneously discharged from the nozzle 32, the lower surface nozzle 41, and the cleaning liquid nozzle 46.
In this way, by performing the cleaning process of the annular drain 64 in parallel with the rinsing process of the wafer W, it is not necessary to wait for various processes of the wafer W before the completion of the drain cleaning process, and therefore the overall processing time of the wafer W can be shortened.
Fig. 10 is a perspective view showing the structure of the exhaust duct 100 according to the embodiment. In fig. 10, portions other than the substrate rotating unit 20, the recovery unit 50, the heating mechanism 70, and the exhaust duct 100 are not shown.
As shown in fig. 10, the exhaust duct 100 is connected to the exhaust port 63 (see fig. 3) of the recovery unit 50, and discharges the exhaust gas in the exhaust passage 62 to the pump 80 (see fig. 3). The exhaust duct 100 includes a descending portion 101, a horizontal portion 102, and an ascending portion 103 in this order from the upstream side.
The cylindrical descending portion 101 is connected to the exhaust port 63 of the collection portion 50 and extends downward. The box-shaped horizontal portion 102 is connected to the downstream side of the descending portion 101, and extends in the horizontal direction in a direction away from the collection portion 50.
The cylindrical rising portion 103 is connected to the downstream side of the horizontal portion 102 and extends upward. The rising portion 103 extends to a position above the collection portion 50. Further, since the downstream side of the horizontal portion 102 of the exhaust duct 100 extends to the outer side of the recovery portion 50 in plan view, the rising portion 103 does not interfere with the recovery portion 50 even if it extends to the upper side of the recovery portion 50.
As described above, the exhaust duct 100 according to the embodiment may be connected to the lower side of the recovery unit 50 and may extend to a position above the recovery unit 50. This can prevent the liquid droplets reaching the exhaust passage 62 from being discharged to the outside from the exhaust port 63 through the exhaust duct 100.
That is, in the embodiment, the droplets reaching the exhaust passage 62 can be separated well by the exhaust duct 100.
In the embodiment, a drain line 104 connected to the drain DR may be connected to the bottom surface of the horizontal portion 102. This enables the liquid droplets that have reached the horizontal portion 102 to be discharged to the drain portion DR, and therefore the liquid droplets that have reached the horizontal portion 102 can be further favorably separated by the exhaust duct 100.
In addition, in the embodiment, the horizontal portion 102 of the exhaust duct 100 may have a box shape. Thus, the exhaust duct 100 can be configured by connecting the descending portion 101 and the ascending portion 103, which are linear pipes, to the box-shaped horizontal portion 102. Therefore, according to the embodiment, the manufacturing cost of the exhaust duct 100 can be reduced.
In the embodiment, the box-shaped horizontal portion 102 may be provided with an inclined portion 102a below a portion connected to the lowered portion 101. This can suppress the generation of a vortex flow at a portion connected to the descending portion 101 when the direction of the exhaust gas changes from the downward direction to the horizontal direction.
Therefore, according to the embodiment, the pressure loss in the exhaust duct 100 can be further reduced, and therefore the flow path resistance of the entire exhaust path connected to the pump 80 from the periphery of the wafer W can be further reduced.
In the embodiment, the box-shaped horizontal portion 102 may be provided with an inclined portion 102b below a portion connected to the rising portion 103. This can suppress the generation of a vortex flow at a portion connected to the rising portion 103 when the direction of the exhaust gas changes from the horizontal direction to the upward direction.
Therefore, according to the embodiment, the pressure loss in the exhaust duct 100 can be further reduced, and therefore the flow path resistance of the entire exhaust path connected to the pump 80 from the periphery of the wafer W can be further reduced.
In the embodiment, the inner diameter of the rising portion 103 may be substantially equal to the inner diameter of the falling portion 101, or may be larger than the inner diameter of the falling portion 101. In the embodiment, the pressure loss in the exhaust duct 100 can be further reduced by making the inner diameter of the rising portion 103 larger than the inner diameter of the falling portion 101.
In the embodiment, the inner dimension of the box-shaped horizontal portion 102 may be larger than the inner diameters of the cylindrical descending portion 101 and ascending portion 103. This allows the descending portion 101 and the ascending portion 103 to be connected to the horizontal portion 102 without any problem.
On the other hand, when the inner dimension of the horizontal portion 102 is excessively larger than the inner diameters of the descending portion 101 and the ascending portion 103, the cross-sectional area of the flow path is rapidly increased and decreased at the connection portion between the descending portion 101 and the horizontal portion 102 and the connection portion between the horizontal portion 102 and the ascending portion 103, and thus a large number of vortices are generated. Therefore, in the embodiment, the cross-sectional area of the horizontal portion 102 is preferably 2 times or less the cross-sectional area of the descending portion 101 and the ascending portion 103.
< modification 1 >
Next, various modifications of the substrate processing apparatus 1 according to the embodiment will be described with reference to fig. 11 to 17. Fig. 11 is a sectional view showing the structure of an upper ring member 54 according to modification 1 of the embodiment.
As shown in fig. 11, the second member 56 of the upper annular member 54 in modification 1 is different from the above-described embodiment in structure. Specifically, in modification 1, the front end portion of the returning portion 56c of the second member 56 is also bent outward.
Thus, in modification 1, the droplets of the processing liquid adhering to the distal end portion of the returning section 56c can be separated from the wafer W. Therefore, according to modification 1, contamination of the wafer W by the droplets adhering to the front end portion of the return portion 56c can be suppressed.
In modification 1, the tip end of the return portion 56c may cover the inner peripheral end of the first member 55 from below. This is a boundary between the inner surface 55a, which is a hydrophilic surface, and the surface 56a, which is a hydrophobic surface, and therefore, it is possible to suppress scattering of droplets of the processing liquid to the inner peripheral end of the first member 55 where the droplets are likely to be collected.
Therefore, according to modification 1, the contamination of the wafer W by the droplets adhering to the inner peripheral end of the first member 55 can be suppressed.
< modification 2 >
Fig. 12 is a sectional view showing the structure of an upper ring member 54 according to modification 2 of the embodiment. As shown in fig. 12, the configuration of the first member 55 of the upper annular member 54 in modification 2 is different from that of the above-described embodiment.
Specifically, in modification 2, the inner surface 55a of the first member 55 includes a horizontal portion 55a1 and an inclined portion 55a2. The horizontal portion 55a1 is a surface extending substantially horizontally from the inner surface of the second member 56.
The inclined portion 55a2 is inclined to be lower from the outermost periphery of the horizontal portion 55a1 toward the outside. The inclination angle of the inclined portion 55a2 in modification 2 is substantially equal to the inclination angle of the inner surface 55a in the embodiment.
Thus, in modification 2, the droplets of the processing liquid adhering to the inner surface 55a of the first member 55 can be separated from the wafer W. Therefore, according to modification 2, contamination of the wafer W by the droplets adhering to the inner surface 55a can be suppressed.
< modification 3 >
Fig. 13 is a sectional view showing the structure of an upper ring member 54 according to modification 3 of the embodiment. As shown in fig. 13, a first member 55 of an upper ring member 54 according to modification 3 is different in structure from modification 2 described above.
The horizontal portion 55a1 of modification 3 extends further toward the outer peripheral side than the horizontal portion of modification 2. In addition, the inclination angle of the inclined portion 55a2 in modification 3 is larger than the inclination angle of the inclined portion 55a2 in modification 2.
Thus, in modification 3, the droplets of the processing liquid adhering to the inner surface 55a of the first member 55 can be further separated from the wafer W. Therefore, according to modification 3, contamination of the wafer W by the droplets adhering to the inner surface 55a can be further suppressed.
< modification 4 >
Fig. 14 is a sectional view showing the structure of the collecting unit 50 according to modification 4 of the embodiment. As shown in fig. 14, the configuration of the upper ring member 54 of the collecting unit 50 of modification 4 is different from that of the above-described embodiment.
Specifically, in modification 4, the protruding length of the return portion 56c of the second member 56 is shorter than that in the embodiment. For example, in modification 4, the downward projection length of the returning section 56c (see fig. 3) is about 3 (mm).
Thus, in modification 4, the formation of the extra liquid receiving space 60 on the back side of the returning section 56c can be suppressed, and therefore the size of the eddy current generated in the extra liquid receiving space 60 can be reduced. Therefore, according to modification 4, the flow of the gas from the wafer W to the exhaust hole 61 can be made smooth.
< modification 5 >
Fig. 15 is a sectional view showing the structure of the collecting unit 50 according to modification 5 of the embodiment. As shown in fig. 15, the configuration of the upper ring member 54 of the collecting unit 50 of modification 5 is different from that of the above-described embodiment.
Specifically, in modification 5, the return portion 56c of the second member 56 does not protrude downward, and the inner surface 55a of the first member 55 extends outward directly from the lower end portion of the return portion 56c.
Thus, in modification 5, the formation of the extra liquid receiving space 60 on the back side of the returning section 56c can be further suppressed, and therefore the size of the vortex generated in the extra liquid receiving space 60 can be further reduced. Therefore, according to modification 5, the flow of the gas from the wafer W to the exhaust hole 61 can be made smoother.
< modification 6 >
Fig. 16 is a sectional view showing the structure of the collecting unit 50 according to modification 6 of the embodiment. In the embodiment and the various modifications described above, the example in which the exhaust hole 61 connecting the liquid receiving space 60 and the exhaust passage 62 is provided in the inner cup 52 is described, but the present invention is not limited to this example.
For example, as shown in fig. 16, the air discharge hole 61 may be provided in the outer cup 51. The exhaust hole 61 has a rising portion 61a, a curved portion 61b, and a falling portion 61c. The rising portion 61a extends upward from the upper end of the outermost periphery of the liquid receiving space 60 to between the cup base 53 and the upper annular member 54.
The bent portion 61b is bent downward between the cup base 53 and the upper annular member 54 from the end portion on the downstream side of the rising portion 61 a. The descending portion 61c extends downward from the downstream end of the curved portion 61b into the cup base 53. The downstream side of the descending portion 61c is connected to the exhaust passage 62.
Even if the gas exhaust holes 61 are configured as described above, by configuring both the first member 55 and the second member 56 to be detachable from the other members, the surface states of the first member 55 and the second member 56 can be optimized even when the surface state of the wafer W and the types of the processing liquids are changed to various types.
Therefore, according to modification 6, the rebound of the processing liquid from the outer cup 51 can be suppressed regardless of the surface state of the wafer W or the type of the processing liquid.
In addition, in modification 6, since the rising portion 61a is provided on the upstream side of the exhaust hole 61, it is possible to suppress the entry of the droplets of the processing liquid into the exhaust hole 61. Therefore, according to the embodiment, the liquid droplets reaching the gas discharge holes 61 can be favorably separated by the rising portions 61 a.
< modification 7 >
Fig. 17 is a sectional view showing the structure of the collecting unit 50 according to modification 7 of the embodiment. In the embodiment and the various modifications described above, an example is given in which the upper ring member 54 of the outer cup member 51 is detachably configured, but the present invention is not limited to this example.
For example, as shown in fig. 17, the outer cup 51 may be integrally formed. The outer cup 51 has a base 51a, an upper annular portion 51b, and a return portion 51c.
The base portion 51a surrounds the entire circumference of the substrate rotating portion 20 at the outermost circumference of the recovery portion 50. The base portion 51a is vertically raised to a height approximately equal to the upper end portion of the inner cup 52.
The upper ring portion 51b is provided so as to surround the upper portion of the outer side of the wafer W. The upper ring portion 51b is inclined so as to become higher toward the inside (i.e., toward the wafer W) from the upper end portion of the base portion 51 a.
The returning portion 51c is bent from the inner peripheral end of the upper ring portion 51b by a predetermined width (for example, about 3 (mm)), and extends in a direction approaching the peripheral edge of the wafer W.
Even if the outer cup 51 is configured as described above, the gas flow from the liquid receiving space 60 to the gas discharge passage 62 can be made smooth by forming the gas discharge hole 61 obliquely downward from the outer surface 52c to the inner surface 52d of the inner cup 52.
Therefore, according to modification 7, since the periphery of the wafer W can be efficiently exhausted, contamination of the wafer W by mist or the like of the processing liquid staying around the wafer W can be suppressed.
In modification 7, as in the above-described embodiment, the air vent 61 may be disposed in the vertical portion 52b of the inner cup 52. This can prevent the processing liquid falling along the outer surface 52c of the inner cup 52 from flowing to the gas discharge hole 61 without flowing to the annular liquid discharge portion 64.
Therefore, according to modification 7, the processing liquid falling along the inner cup 52 can be separated well.
< modification 8 >
Fig. 18 is a sectional view showing the structure of a collecting unit 50 according to modification 8 of the embodiment. In the embodiment and the various modifications described above, the example in which the returning portion 56c or the returning portion 51c is provided in the outer cup 51 is described, but the present invention is not limited to this example.
For example, as shown in fig. 18, in the integrally formed outer cup 51, the outer cup 51 may be formed of a base 51a and an upper annular portion 51 b.
In modification 8, the inner surface 51d of the outer cup 51 has a horizontal portion 51d1 extending horizontally outward from a portion closest to the wafer W (for example, an inner peripheral end of the outer cup 51).
Accordingly, since the spiral flow of the wafer W moving outward from the wafer W can be made to follow the horizontal portion 51d1, the processing liquid adhering to the horizontal portion 51d1 can be smoothly guided to the annular liquid discharge portion 64 by the spiral flow of the wafer W.
Therefore, according to modification 8, the processing liquid remaining in the horizontal portion 51d1 can be prevented from flowing back toward the wafer W, and therefore contamination of the wafer W by the processing liquid flowing back can be prevented.
Fig. 19 and 20 are perspective views showing the structure of a cover 59 according to modification 8 of the embodiment. Fig. 19 is a perspective view of the nozzle 32 as viewed from the inside, and fig. 20 is a perspective view of the nozzle 32 as viewed from above. Fig. 19 and 20 show a case where the nozzle 32 is located at a processing position above the peripheral edge of the wafer W.
As shown in fig. 19 and 20, in modification 8, the nozzle 32 has a cover 59. The cover member 59 is disposed around the nozzle 32. The cover 59 has side wall portions 59a, 59b, 59c, an upper wall portion 59d, and a protruding portion 59e.
The side wall portions 59a, 59b, and 59c are disposed near the side portions of the nozzle 32, respectively, and extend in the vertical direction. The side wall portion 59a is disposed inside the nozzle 32 when viewed from the center of the substrate rotating unit 20. The side wall portion 59b is disposed outside the nozzle 32 when viewed from the center of the substrate rotating unit 20. The side wall portion 59c is provided at a position connecting the side wall portion 59a and the side wall portion 59 b.
The upper wall portion 59d is disposed above the nozzle 32 and extends in the horizontal direction. The upper wall portion 59d is disposed above the nozzle 32 at a position connecting the side wall portion 59a and the side wall portion 59 b. The protruding portion 59e is disposed outside the side wall portion 59b and extends in the horizontal direction. That is, the protruding portion 59e protrudes in the horizontal direction from the outer side of the side wall portion 59 b.
In modification 8, the upper annular portion 51b of the outer cup 51 has openings 51e and 51f. The opening 51e allows the scattered processing liquid supplied from the nozzle 32 to flow into the liquid receiving space 60 (see fig. 18).
This can prevent the scattered processing liquid supplied from the nozzle 32 from directly hitting the inner peripheral end of the outer cup 51. Therefore, according to modification 8, the rebound of the processing liquid from the inner peripheral end of the outer cup 51 can be suppressed.
The opening 51e can be formed, for example, from the vicinity of the nozzle 32 at the inner peripheral end of the outer cup 51 to a position where the scattered processing liquid supplied from the nozzle 32 does not directly collide. This can suppress the rebound of the processing liquid from the inner peripheral end of the outer cup 51 and the backflow of the processing liquid from the inner surface 51d (see fig. 18) of the outer cup 51.
Therefore, according to modification 8, contamination of the wafer W by the processing liquid scattered from the wafer W can be further suppressed.
The opening 51f is formed to allow the nozzle 32 to move between the processing position and the standby position. That is, when the nozzle 32 is in the standby position, the nozzle 32 is accommodated in the opening 51f. On the other hand, when the nozzle 32 is at the treatment position, the nozzle 32 is positioned inside the opening 51f.
Here, in modification 8, as shown in fig. 19, when the nozzle 32 is at the treatment position, at least a part of the opening 51f can be closed by the side wall portion 59 b. Accordingly, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, and therefore the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 8, in the liquid treatment of the wafer W, the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, and therefore, the mist of the treatment liquid remaining on the inner surface 51d and the treatment liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 8, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 8, as shown in fig. 20, when the nozzle 32 is at the treatment position, at least a part of the opening 51f may be closed by the protrusion 59e. Accordingly, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, and therefore the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 8, in the liquid treatment of the wafer W, the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, and therefore, the mist of the treatment liquid remaining on the inner surface 51d and the treatment liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 8, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 8, as shown in fig. 20, a slit 59f may be provided between the protruding portion 59e and the side wall portion 59 b. This allows a downward flow from the slit 59f to be formed in the space formed below the protrusion 59e.
Therefore, according to modification 8, stagnation of the space formed below the projection 59e (where the processing liquid is) can be suppressed, and therefore contamination of the wafer W by mist of the processing liquid staying in the space can be suppressed.
< modification 9 >
Fig. 21 and 22 are perspective views showing the structure of a cover 59 according to modification 9 of the embodiment. Fig. 21 is a perspective view of the nozzle 32 as viewed from the inside, and fig. 22 is a perspective view of the nozzle 32 as viewed from above. Fig. 21 and 22 show a case where the nozzle 32 is located at a processing position above the peripheral edge of the wafer W.
As shown in fig. 21 and 22, modification 9 has smaller areas of the side wall portion 59a and the side wall portion 59c than modification 8 described above. In this case as well, when the nozzle 32 is at the processing position, at least a part of the opening 51f is closed by the side wall portion 59b, and the gap area between the wafer W and the outer cup 51 can be reduced, as in the modification 8 described above.
That is, in modification 9, in the liquid treatment of the wafer W, the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, and therefore, the mist of the treatment liquid remaining on the inner surface 51d and the treatment liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 9, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 9, as in modification 8 described above, when the nozzle 32 is at the treatment position, at least a part of the opening 51f can be closed by the protrusion 59e. Accordingly, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, and therefore the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 9, in the liquid treatment of the wafer W, the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, and therefore, the mist of the treatment liquid remaining on the inner surface 51d and the treatment liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 9, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 9, as in modification 8, a slit 59f may be provided between the protruding portion 59e and the side wall portion 59 b. This allows a downward flow from the slit 59f to be formed in the space formed below the protrusion 59e.
Therefore, according to modification 9, stagnation of the space formed below the projection 59e (where the processing liquid is) can be suppressed, and therefore contamination of the wafer W by mist of the processing liquid staying in the space can be suppressed.
< modification 10 >
Fig. 23 and 24 are perspective views showing the structure of a cover 59 according to modification 10 of the embodiment. Fig. 23 is a perspective view of the nozzle 32 as viewed from the inside, and fig. 24 is a perspective view of the nozzle 32 as viewed from above. Fig. 23 and 24 show a case where the nozzle 32 is located at a processing position above the peripheral edge of the wafer W.
As shown in fig. 23 and 24, modification 10 is different from modification 8 in the structure of the side wall portion 59a and the side wall portion 59 b. Specifically, in modification 10, when the nozzle 32 is not in the processing position but in the standby position, at least a part of the opening 51f is closed by the side wall portion 59 a.
Accordingly, when the nozzle 32 is in the standby position, the opening area of the opening 51f can be reduced, and thus the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 10, since the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51 when the nozzle 32 is on standby, the mist of the processing liquid remaining on the inner surface 51d and the processing liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 10, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 10, as in modification 8 described above, when the nozzle 32 is at the treatment position, at least a part of the opening 51f can be closed by the protrusion 59e. Accordingly, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, and thus the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 10, in the liquid treatment of the wafer W, the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, and therefore, the mist of the treatment liquid remaining on the inner surface 51d and the treatment liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 10, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 10, as in modification 8, a slit 59f may be provided between the protruding portion 59e and the side wall portion 59 b. This allows a downward flow from the slit 59f to be formed in the space formed below the protrusion 59e.
Therefore, according to modification 10, stagnation of the space formed below the projection 59e (where the processing liquid is) can be suppressed, and therefore contamination of the wafer W by mist of the processing liquid staying in the space can be suppressed.
< modification 11 >
Fig. 25 and 26 are perspective views showing the structure of a cover 59 according to modification 11 of the embodiment. Fig. 25 is a perspective view of the nozzle 32 as viewed from the inside, and fig. 26 is a perspective view of the nozzle 32 as viewed from above. Fig. 25 and 26 show a case where the nozzle 32 is located at a processing position above the peripheral edge of the wafer W.
As shown in fig. 25 and 26, modification 11 is different from modification 8 and modification 10 in the structure of the side wall portion 59a and the side wall portion 59 b. Specifically, in modification 11, since the side wall portions 59a and 59b have small areas, the entire opening 51f cannot be closed by the side wall portions 59a and 59 b.
Accordingly, when the nozzle 32 is at the processing position or the standby position, the opening area of the opening 51f can be reduced to some extent, and therefore the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 11, since the flow velocity of the spiral flow of the wafer W can be increased to some extent in the gap between the wafer W and the outer cup 51, the mist of the processing liquid remaining on the inner surface 51d and the processing liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 11, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 11, as in modification 8 described above, when the nozzle 32 is at the treatment position, at least a part of the opening 51f can be closed by the protrusion 59e. Accordingly, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, and therefore the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 11, during the liquid treatment of the wafer W, the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, and therefore, the mist of the treatment liquid remaining on the inner surface 51d and the treatment liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 11, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
In modification 11, as in modification 8, a slit 59f may be provided between the protruding portion 59e and the side wall portion 59 b. This allows a downward flow from the slit 59f to be formed in the space formed below the protrusion 59e.
Therefore, according to modification 11, stagnation of the space formed below the projection 59e (where the processing liquid is) can be suppressed, and therefore contamination of the wafer W by mist of the processing liquid staying in the space can be suppressed.
< modification 12 >
Fig. 27 is a perspective view showing the structure of a cover 59 according to modification 12 of the embodiment. Fig. 27 is a perspective view of the nozzle 32 as viewed from above, and shows a case where the nozzle 32 is located at a processing position above the peripheral edge portion of the wafer W.
As shown in fig. 27, modification 12 is different from modification 11 in that no slit 59f is provided in the cover 59. Thus, by providing the side wall portions 59a and 59b in the cover 59, the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 12, since the flow velocity of the spiral flow of the wafer W can be increased to some extent in the gap between the wafer W and the outer cup 51, the mist of the processing liquid remaining on the inner surface 51d and the processing liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 12, contamination of the wafer W by the processing liquid flowing back can be suppressed.
In modification 12, as in modification 11, when the nozzle 32 is at the treatment position, at least a part of the opening 51f may be closed by the protrusion 59e. Accordingly, when the nozzle 32 is at the processing position, the opening area of the opening 51f can be reduced, and therefore the gap area between the wafer W and the outer cup 51 can be reduced.
That is, in modification 12, in the liquid treatment of the wafer W, the flow velocity of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup 51, and therefore, the mist of the treatment liquid remaining on the inner surface 51d and the treatment liquid staying in the liquid receiving space 60 can be prevented from flowing back to the wafer W. Therefore, according to modification 12, contamination of the wafer W by the processing liquid flowing backward can be suppressed.
The substrate processing apparatus 1 of the embodiment includes a substrate rotating unit 20 and a cup (outer cup 51). The substrate rotation section 20 holds and rotates a substrate (wafer W). The cup (outer cup 51) annularly covers the periphery of the substrate (wafer W) held by the substrate rotating unit 20. The cup (outer cup 51) has a cup base 53, a first member 55, and a second member 56. The cup base 53 surrounds the entire circumference of the substrate rotating section 20. The first member 55 is detachably attached to the upper end of the cup base 53, and annularly surrounds the outer periphery of the substrate (wafer W). The second member 56 is detachably attached to at least the inner peripheral end of the first member 55, and the surface 56a is hydrophobic. As a result, the rebound of the processing liquid from the outer cup 51 can be suppressed regardless of the surface state of the wafer W or the type of the processing liquid.
The substrate processing apparatus 1 according to the embodiment further includes a processing liquid nozzle (nozzle 32) which is movable in the horizontal direction and which can supply a processing liquid to the substrate (wafer W) held by the substrate rotating unit 20. The cup (outer cup 51) has an opening 51f formed to allow the processing liquid nozzle (nozzle 32) to move between a processing position above the peripheral edge of the substrate (wafer W) and a standby position outside the processing position. The treatment liquid nozzle (nozzle 32) has a cover 59 for closing at least a part of the opening 51f. This can suppress contamination of the wafer W by the processing liquid flowing backward.
In addition, in the substrate processing apparatus 1 of the embodiment, the cover 59 has side wall portions 59a, 59b, 59c and an upper wall portion 59d. The side walls 59a, 59b, and 59c are disposed close to the side of the treatment liquid nozzle (nozzle 32). The upper wall portion 59d is disposed above the treatment liquid nozzle (nozzle 32). This can suppress contamination of the wafer W by the processing liquid flowing backward.
In the substrate processing apparatus 1 according to the embodiment, the side wall portion 59b is disposed outside the processing liquid nozzle (nozzle 32) when viewed from the center of the substrate rotating unit 20, and closes at least a part of the opening portion 51f when the processing liquid nozzle (nozzle 32) is at the processing position. This can suppress contamination of the wafer W by the processing liquid flowing backward.
In the substrate processing apparatus 1 according to the embodiment, the side wall portion 59a is disposed inside the processing liquid nozzle (nozzle 32) when viewed from the center of the substrate rotating unit 20, and closes at least a part of the opening portion 51f when the processing liquid nozzle (nozzle 32) is located at the standby position. This can suppress contamination of the wafer W by the processing liquid flowing back.
In the substrate processing apparatus 1 according to the embodiment, the inner surface 51d of the cup (outer cup 51) has the horizontal portion 51d1 extending horizontally outward from the portion closest to the substrate (wafer W). This can suppress contamination of the wafer W by the processing liquid flowing backward.
In the substrate processing apparatus 1 according to the embodiment, the inner surface 55a of the first member 55 is hydrophilic, and the inner surface 53a of the cup base 53 is hydrophobic. This can prevent the processing liquid remaining on the inner surface 55a from flowing back toward the wafer W, and thus can prevent the wafer W from being contaminated by the processing liquid flowing back.
In the substrate processing apparatus 1 according to the embodiment, the second member 56 includes: a support portion 56b supported by the first member 55; and a return portion 56c bent from the inner peripheral end of the support portion 56b and extending in a direction close to the peripheral edge portion of the substrate (wafer W). This can suppress contamination of the wafer W by the processing liquid flowing backward.
In the substrate processing apparatus 1 of the embodiment, the returning section 56c is curved inward from the inner peripheral end of the first member 55 so as to have a predetermined width in the horizontal direction. This can suppress contamination of the wafer W by the processing liquid flowing back.
In the substrate processing apparatus 1 according to the embodiment, the tip end portion of the returning portion 56c is also bent outward. This can prevent the wafer W from being contaminated by the droplets adhering to the front end of the return portion 56c.
In the substrate processing apparatus 1 according to the embodiment, the tip end portion of the returning portion 56c covers the inner peripheral end of the first member 55 from below. This can prevent the wafer W from being contaminated by the droplets adhering to the inner peripheral end of the first member 55.
In the substrate processing apparatus 1 according to the embodiment, the opening 56d for allowing the scattered processing liquid supplied from the nozzle 32 to flow to the first member 55 is provided in a part of the return portion 56c. This can further suppress contamination of the wafer W caused by the processing liquid scattered from the wafer W.
In the substrate processing apparatus 1 according to the embodiment, the inner surface 55a of the first member 55 has the groove 55b formed along the direction in which the processing liquid supplied to the rotating substrate (wafer W) is flown to be scattered outward. This allows the processing liquid adhering to the inner surface 55a of the first member 55 to be smoothly guided to the annular liquid discharge portion 64 by the spiral flow of the wafer W.
While the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention.
The embodiments disclosed herein are illustrative in all respects and should not be considered as limiting. In fact, the various embodiments described above can be implemented in a variety of ways. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope of the present invention (claims) and the gist thereof.

Claims (13)

1. A substrate processing apparatus, comprising:
a substrate rotating section for holding and rotating the substrate; and
a cup-shaped body which annularly covers the periphery of the substrate held by the substrate rotating part;
the cup-shaped body includes:
a cup base surrounding the entire circumference of the substrate rotating section;
a first member detachably attached to an upper end portion of the cup-shaped base and annularly surrounding an outer periphery of the substrate; and
and a second member detachably attached to at least an inner peripheral end of the first member, and having a hydrophobic surface.
2. The substrate processing apparatus according to claim 1, wherein:
the inner surface of the first part is hydrophilic,
the inner surface of the base of the cup is hydrophobic.
3. The substrate processing apparatus according to claim 1 or 2, wherein:
further comprising a treatment liquid nozzle which is movable in a horizontal direction and is capable of supplying a treatment liquid to the substrate held by the substrate rotating section,
the cup-shaped body has an opening formed so that the treatment liquid nozzle can move between a treatment position above the peripheral edge portion of the substrate and a standby position outside the treatment position,
the treatment liquid nozzle has a cover member that closes at least a part of the opening.
4. The substrate processing apparatus according to claim 3, wherein:
the cover has a side wall portion and an upper wall portion,
the side wall portion is disposed close to a side portion of the treatment liquid nozzle,
the upper wall portion is disposed above the treatment liquid nozzle.
5. The substrate processing apparatus according to claim 4, wherein:
the side wall portion is disposed outside the treatment liquid nozzle when viewed from the center of the substrate rotating portion, and closes at least a part of the opening portion when the treatment liquid nozzle is at the treatment position.
6. The substrate processing apparatus according to claim 4, wherein:
the side wall portion is disposed inside the treatment liquid nozzle when viewed from the center of the substrate rotating portion, and closes at least a part of the opening portion when the treatment liquid nozzle is in the standby position.
7. The substrate processing apparatus according to claim 1 or 2, wherein:
the inner surface of the cup-shaped body has a horizontal portion horizontally extending from a portion closest to the substrate to an outer side.
8. The substrate processing apparatus according to claim 1 or 2, wherein:
the second component includes:
a support portion supported by the first member; and
a returning portion bent from an inner peripheral end of the supporting portion and extending in a direction close to a peripheral portion of the substrate.
9. The substrate processing apparatus according to claim 8, wherein:
the return portion is bent inward from an inner peripheral end of the first member so as to have a given width in a horizontal direction.
10. The substrate processing apparatus according to claim 8, wherein:
the front end of the return portion is also bent outward.
11. The substrate processing apparatus according to claim 10, wherein:
the front end of the return portion covers the inner peripheral end of the first member from below.
12. The substrate processing apparatus according to claim 8, wherein:
an opening portion through which the scattered processing liquid supplied from the nozzle flows toward the first member is provided in a part of the return portion.
13. The substrate processing apparatus according to claim 1 or 2, wherein:
the inner surface of the first member has a groove formed along a direction in which the processing liquid supplied to the rotating substrate flows to be splashed outward.
CN202222602256.2U 2021-11-04 2022-09-30 Substrate processing apparatus Active CN218602389U (en)

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