CN211238248U - Semiconductor package - Google Patents
Semiconductor package Download PDFInfo
- Publication number
- CN211238248U CN211238248U CN201922495894.7U CN201922495894U CN211238248U CN 211238248 U CN211238248 U CN 211238248U CN 201922495894 U CN201922495894 U CN 201922495894U CN 211238248 U CN211238248 U CN 211238248U
- Authority
- CN
- China
- Prior art keywords
- electronic component
- shielding
- interposer
- semiconductor package
- pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
本公开的实用新型涉及半导体封装。半导体封装包括:衬底,包括多个连接焊盘和多个接地焊盘;电子部件,被联接到衬底的安装表面,并且通过至少一个引线与多个连接焊盘中的至少一个连接;第一中介层,被布置在电子部件的背离衬底的第一表面上,并且包括相对布置的绝缘表面和接地表面;其中绝缘表面与电子部件的第一表面绝缘地耦合;并且接地表面经由第一屏蔽结构与多个接地焊盘连接。提供了具有屏蔽结构的半导体封装。
The utility model of the present disclosure relates to a semiconductor package. The semiconductor package includes: a substrate including a plurality of connection pads and a plurality of ground pads; an electronic component coupled to a mounting surface of the substrate and connected to at least one of the plurality of connection pads through at least one lead; an interposer disposed on a first surface of the electronic component facing away from the substrate and including an insulating surface and a ground surface disposed oppositely; wherein the insulating surface is insulatingly coupled to the first surface of the electronic component; and the ground surface is via the first surface The shield structure is connected to a plurality of ground pads. A semiconductor package having a shielding structure is provided.
Description
技术领域technical field
本公开的实施例一般地涉及半导体领域,并且更具体地涉及半导体封装。Embodiments of the present disclosure relate generally to the field of semiconductors, and more particularly to semiconductor packaging.
背景技术Background technique
集成电路和其它电子器件可以被封装在半导体封装上。半导体封装可以被集成到诸如无线通信装置或者是其他产品上。在一些情况下,半导体封装上的集成电路和/或电子器件可能会彼此干扰或干扰其它电子部件。Integrated circuits and other electronic devices can be packaged on semiconductor packages. Semiconductor packages can be integrated into products such as wireless communication devices or other products. In some cases, integrated circuits and/or electronic devices on a semiconductor package may interfere with each other or with other electronic components.
需要提供一种半导体封装结构,以提高半导体封装的抗干扰能力。There is a need to provide a semiconductor package structure to improve the anti-interference capability of the semiconductor package.
实用新型内容Utility model content
根据本公开的实施例,提供了半导体封装,以解决或部分解决现有半导体封装存在的上述问题和其他问题。According to embodiments of the present disclosure, semiconductor packages are provided to solve or partially solve the above-mentioned problems and other problems with existing semiconductor packages.
在本公开的第一方面中,提供了一种半导体封装,包括:衬底,包括多个连接焊盘和多个接地焊盘;电子部件,被联接到衬底的安装表面,并且通过至少一个引线与多个连接焊盘中的至少一个连接;第一中介层,被布置在电子部件的背离衬底的第一表面上,并且包括相对布置的绝缘表面和接地表面;其中绝缘表面与电子部件的第一表面绝缘地耦合;并且接地表面经由第一屏蔽结构与多个接地焊盘连接。In a first aspect of the present disclosure, there is provided a semiconductor package comprising: a substrate including a plurality of connection pads and a plurality of ground pads; an electronic component coupled to a mounting surface of the substrate and through at least one a lead is connected to at least one of the plurality of connection pads; a first interposer is disposed on a first surface of the electronic component facing away from the substrate, and includes an insulating surface and a ground surface disposed oppositely; wherein the insulating surface is connected to the electronic component and the ground surface is connected to the plurality of ground pads via the first shield structure.
在电子部件的表面布置包括绝缘表面和接地表面的第一中介层,并且通过第一屏蔽结构将接地表面与多个接地焊盘连接,使电子部件的上方形成第一屏蔽结构。如此,位于电子部件顶部的第一中介层的接地表面、以及第一屏蔽结构共同接地,由此,形成了包围电子部件的良好的屏蔽外壳,以提高电子部件的电磁屏蔽性能。这对用于传输高速信号、高速差分信号、射频信号的传输器件而言,可以提供良好的屏蔽性能,可以保证信号的完整性。A first interposer including an insulating surface and a grounding surface is arranged on the surface of the electronic component, and the grounding surface is connected to a plurality of grounding pads through the first shielding structure, so that the first shielding structure is formed above the electronic component. In this way, the grounding surface of the first interposer on the top of the electronic component and the first shielding structure are grounded together, thereby forming a good shielding shell surrounding the electronic component to improve the electromagnetic shielding performance of the electronic component. This can provide good shielding performance for transmission devices used to transmit high-speed signals, high-speed differential signals, and radio frequency signals, and can ensure signal integrity.
在一些实施例中,第一屏蔽结构包括多个第一屏蔽线或第一屏蔽带。将多个第一屏蔽线或第一屏蔽带的每个连接到接地焊盘可以形成接地屏蔽,由此,可以屏蔽外界的干扰信号的能量,从而至少部分地和/或全部地为电子部件提供屏蔽效果。In some embodiments, the first shield structure includes a plurality of first shield wires or first shield strips. Connecting each of the plurality of first shield wires or the first shield strips to the ground pad may form a ground shield, thereby shielding the energy of interfering signals from the outside to provide at least partially and/or fully the electronic component shielding effect.
在一些实施例中,多个接地焊盘与多个连接焊盘对应设置,使得被连接到每个接地焊盘的第一屏蔽线或第一屏蔽带与被连接到对应的连接焊盘的引线相对应。将第一屏蔽线或第一屏蔽带与对应的引线相对应设置,可以方便地保证对应的引线与接地线或接地带之间的间距一致,以可以提供更好地屏蔽电子部件,并且为电子部件传输的信号提供了连续的恒定的参考基准(即接地屏蔽线或屏蔽带)。In some embodiments, the plurality of ground pads are arranged corresponding to the plurality of connection pads, such that the first shield wire or first shield strip connected to each ground pad is connected to the lead wire connected to the corresponding connection pad Corresponding. Arranging the first shielding wire or the first shielding tape corresponding to the corresponding lead can easily ensure that the distance between the corresponding lead and the grounding wire or the grounding tape is consistent, so as to provide better shielding of electronic components, and provide better protection for electronic components. The signal transmitted by the component provides a continuous constant reference (ie, grounded shield wire or shield tape).
在一些实施例中,第一中介层至少覆盖电子部件的第一表面的面积的80%。可以为第一中介层连接第一屏蔽结构预留一定空间,以与引线对应地布置第一屏蔽结构(例如,第一屏蔽线或第一屏蔽带)。In some embodiments, the first interposer covers at least 80% of the area of the first surface of the electronic component. A certain space may be reserved for the first interposer to connect to the first shielding structure, so as to arrange the first shielding structure (eg, the first shielding wire or the first shielding tape) corresponding to the lead.
在一些实施例中,还包括:第二中介层,位于电子部件与衬底之间,并且电子部件通过第二中介层与衬底的安装表面联接,第二中介层包括多个屏蔽焊盘;第二屏蔽结构,包括多个第二屏蔽线或第二屏蔽带,第二屏蔽线或第二屏蔽带与多个屏蔽焊盘中的一个或多个连接以至少部分地包围电子部件。In some embodiments, further comprising: a second interposer between the electronic component and the substrate, and the electronic component is coupled to the mounting surface of the substrate through the second interposer, the second interposer including a plurality of shield pads; The second shield structure includes a plurality of second shield wires or second shield strips connected to one or more of the plurality of shield pads to at least partially surround the electronic component.
利用第二中介层,进一步在电子部件的外围形成第二屏蔽结构,可以进一步提高电子部件的抗干扰能力。这对用于传输高速信号、高速差分信号、射频信号的传输器件而言,可以提供良好的屏蔽性能,可以保证信号的完整性。By using the second interposer, a second shielding structure is further formed on the periphery of the electronic component, which can further improve the anti-interference ability of the electronic component. This can provide good shielding performance for transmission devices used to transmit high-speed signals, high-speed differential signals, and radio frequency signals, and can ensure signal integrity.
在一些实施例中,第一中介层是硅中介层。由此,可以在半导体制造过程中方便地实现中介层的制造。In some embodiments, the first interposer is a silicon interposer. Thereby, the fabrication of the interposer can be conveniently realized during the semiconductor fabrication process.
以上已经描述了本公开的各实施例,上述说明是示例性的,并非穷尽性的,并且也不限于所公开的各实施例。在不偏离所说明的各实施例的范围和精神的情况下,对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。本文中所用术语的选择,旨在最好地解释各实施例的原理、实际应用或对市场中的技术的改进,或者使本技术领域的其他普通技术人员能理解本文公开的各实施例。Various embodiments of the present disclosure have been described above, and the foregoing descriptions are exemplary, not exhaustive, and not limiting of the disclosed embodiments. Numerous modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or improvement over the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
应当理解,实用新型内容部分中所描述的内容并非旨在限定本公开的实施例的关键或重要特征,亦非用于限制本公开的范围。本公开的其它特征将通过以下的描述变得容易理解。It should be understood that what is described in this Summary section is not intended to limit key or critical features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will become apparent from the following description.
附图说明Description of drawings
结合附图并参考以下详细说明,本公开各实施例的上述和其他特征、优点及方面将变得更加明显。在附图中,相同或相似的附图标记表示相同或相似的元素,其中:The above and other features, advantages and aspects of various embodiments of the present disclosure will become more apparent when taken in conjunction with the accompanying drawings and with reference to the following detailed description. In the drawings, the same or similar reference numbers refer to the same or similar elements, wherein:
图1示出了根据本公开的实施例的半导体封装的简化截面示意图;1 shows a simplified cross-sectional schematic diagram of a semiconductor package according to an embodiment of the present disclosure;
图2示出了根据本公开的实施例的半导体封装的简化截面示意图;2 shows a simplified schematic cross-sectional view of a semiconductor package according to an embodiment of the present disclosure;
图3示出了图2中的根据本公开的实施例的半导体封装的俯视图;以及FIG. 3 shows a top view of the semiconductor package of FIG. 2 according to an embodiment of the present disclosure; and
图4示出了图2中的根据本公开的实施例的半导体封装的俯视图。FIG. 4 shows a top view of the semiconductor package of FIG. 2 according to an embodiment of the present disclosure.
具体实施方式Detailed ways
下面将参照附图更详细地描述本公开的实施例。虽然附图中显示了本公开的某些实施例,然而应当理解的是,本公开可以通过各种形式来实现,而且不应该被解释为限于这里阐述的实施例,相反提供这些实施例是为了更加透彻和完整地理解本公开。应当理解的是,本公开的附图及实施例仅用于示例性作用,并非用于限制本公开的保护范围。Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided for the purpose of A more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are only for exemplary purposes, and are not intended to limit the protection scope of the present disclosure.
如上所述,目前存在提高半导体器件的抗干扰的性能的需求。针对上述问题以及其他可能的潜在问题,本公开的实施例提供了一种半导体封装。以下结合图1-图4来具体描述本公开的实施例。As described above, there is currently a need to improve the anti-interference performance of semiconductor devices. In response to the above problems and other possible potential problems, embodiments of the present disclosure provide a semiconductor package. Embodiments of the present disclosure are specifically described below with reference to FIGS. 1 to 4 .
在第一方面,本公开提供了一种半导体封装。图1示出了根据本公开的实施例的半导体封装的示意图。总体上,半导体封装包括衬底10、电子部件20、第一中介层30。In a first aspect, the present disclosure provides a semiconductor package. FIG. 1 shows a schematic diagram of a semiconductor package according to an embodiment of the present disclosure. In general, the semiconductor package includes a
衬底10包括多个连接焊盘12和多个接地焊盘14。连接焊盘12是用于与电子部件20进行通信或电连接的焊盘。接地焊盘14是用于接地的焊盘。在一些实施例中,连接焊盘12和接地焊盘14可以分别是一个或多个焊盘和/或互连迹线。The
在一些实施例中,衬底10可以是有机结构。在其它实施例中下,衬底10可以是无机的(例如,陶瓷等)。衬底10可以具有任何适当尺寸和/或形状。例如,在示例性实施例中,衬底10可以是矩形面板,衬底10可以由任何适当材料制造,包括聚合物材料、玻璃纤维、塑料、复合材料、玻璃、陶瓷材料、FR-5材料、其组合等。In some embodiments, the
电子部件20被联接到衬底10的安装表面,并且电子部件20通过至少一个引线21与多个连接焊盘12中的至少一个连接,从而将电子部件20电气和机械地联接到衬底10。The
在一些实施例中,电子部件包括至少一个集成电路芯片,电子部件可以经由任何方式而电气和机械地联接到衬底10,例如是金属柱、焊料凸块、各向异性导电膜(ACF)、不导电膜(NCF)及其等已知技术。In some embodiments, the electronic components include at least one integrated circuit chip, which may be electrically and mechanically coupled to the
第一中介层30被布置在电子部件20的背离衬底10的第一表面23上(即图1中所示出的电子部件20的顶部表面)。第一中介层30包括相对布置的绝缘表面35和接地表面33,如图1所示,接地表面33比绝缘表面35更远离电子部件20。The
在一些实施例中,绝缘表面35和接地表面33可以是第一中介层30上的绝缘层和接地层。并且,绝缘表面35与电子部件20的第一表面23绝缘地联接,接地表面33经由第一屏蔽结构31与多个接地焊盘14连接。In some embodiments,
在一些实施例中,接地表面33可以通过任何适当方式而被形成在第一中介层30上(例如,硅中介层上)。例如,利用物理气相沉积、化学气相沉积、溅镀、金属膏沉积、其组合等而形成的导通金属层。In some embodiments,
在另一些实施例中,接地表面33可以是一层金属层,例如是铝、银、铜等和/或铝、银、铜等的合金。接地表面33可以经由溅镀、膏料印刷、刮印、原子层沉积(ALD)或多种不同的物理气相沉积(PVD)技术来形成。In other embodiments, the
如此,可以充分地将电子部件20包围在第一屏蔽结构中,以提高电子部件的电磁屏蔽性能。这对用于传输高速信号、高速差分信号、射频信号的传输器件而言,可以提供良好的屏蔽性能,可以保证信号的完整性。In this way, the
利用绝缘表面35与电子部件20绝缘地耦合,并且将接地表面33与接地焊盘通过第一屏蔽结构31连接。这样,位于电子部件20顶部的第一中介层30的接地表面33、以及第一屏蔽结构31共同接地,由此,形成了包围电子部件20的良好的屏蔽外壳,可以充分地屏蔽外界的干扰能量,也能屏蔽电子部件20向外发射的能量(例如电场和/或磁场)。The
在一些实施例中,第一中介层30是硅中介层。可以在半导体制造过程中方便地实现第一中介层的制造。如前所述,该硅中介层包括接地表面33。In some embodiments, the
在一些实施例中,第一屏蔽结构31包括多个第一屏蔽线或第一屏蔽带。由此,可以屏蔽外界的干扰信号的能量,从而至少部分地和/或全部地为电子部件提供屏蔽效果。In some embodiments, the
在一些实施例中,如图1所示,多个接地焊盘14与多个连接焊盘12对应设置。这样被连接到每个接地焊盘14的第一屏蔽线或第一屏蔽带与被连接到对应的连接焊盘12 的引线21相对应。In some embodiments, as shown in FIG. 1 , the plurality of
由此,可以方便地保证对应的引线与接地线或接地带之间的间距一致,以可以提供更好地屏蔽电子部件,并且为电子部件传输的信号提供了连续的恒定的参考基准(即接地屏蔽线或屏蔽带)。In this way, it is convenient to ensure that the distance between the corresponding lead and the grounding wire or grounding strip is consistent, so as to provide better shielding of the electronic components, and provide a continuous and constant reference for the signals transmitted by the electronic components (ie, grounding). shielded wire or tape).
在一些实施例中,第一中介层30至少覆盖电子部件20的第一表面23的面积的80%。由此,可以为第一中介层连接第一屏蔽结构预留一定空间,以与引线对应地布置第一屏蔽结构(例如,第一屏蔽线或第一屏蔽带)。在一些实施例中,使第一中介层至少覆盖电子部件20的第一表面23的面积的例如范围85%-90%(例如,88%)、或者范围90%-98% (例如,95%)。这样布置,既能保证屏蔽效果,又能简化制造工艺。In some embodiments, the
在一些实施例中,如图2-图4所示,半导体封装还可以进一步包括第二中介层40和第二屏蔽结构42。图2示出了包括第二中介层40的半导体封装的侧视图,图3是图2 的半导体封装的俯视图,图4示出了图2的半导体封装的俯视图。为了避免图中的混乱,在图4中略去了图2-图3中的接地焊盘14、连接焊盘12、引线21、第一屏蔽结构31,仅示出了第二屏蔽结构42的示意图。In some embodiments, as shown in FIGS. 2-4 , the semiconductor package may further include a
如图2和图4所示,第二中介层40位于电子部件20与衬底10之间,并且电子部件20通过第二中介层40与衬底10的安装表面联接,第二中介层40包括多个屏蔽焊盘 41。第二屏蔽结构42包括多个第二屏蔽线或第二屏蔽带,第二屏蔽线或第二屏蔽带与多个屏蔽焊盘41中的一个或多个连接,从而电子部件20被第二屏蔽结构42至少部分地包围。As shown in FIGS. 2 and 4 , the
利用第二中介层,进一步在电子部件的外围形成第二屏蔽结构,可以进一步提高电子部件的抗干扰能力。这对用于传输高速信号、高速差分信号、射频信号的传输器件而言,可以提供良好的屏蔽性能,可以保证信号的完整性。By using the second interposer, a second shielding structure is further formed on the periphery of the electronic component, which can further improve the anti-interference ability of the electronic component. This can provide good shielding performance for transmission devices used to transmit high-speed signals, high-speed differential signals, and radio frequency signals, and can ensure signal integrity.
在一些实施例中,如图3和图4所示,第二中介层40的底表面与衬底10联接,第二中介层40的顶表面45与电子部件20联接。多个屏蔽焊盘41被布置在第二中介层40 的顶表面45上。在一些实施例中,第二中介层40比电子部件20的面积大,例如大 1%-10%。以简化屏蔽焊盘41的制造工艺以及促进第二屏蔽结构42与屏蔽焊盘41的连接。In some embodiments, as shown in FIGS. 3 and 4 , the bottom surface of the
在一些实施例中,如图4所示,第二屏蔽线或第二屏蔽带例如可以从电子部件20的一侧上的屏蔽焊盘41连接到电子部件20的另一侧上的屏蔽焊盘41。第二屏蔽线或第二屏蔽带可以以预定密度重复连接多道。根据需要屏蔽水平的要求,可以设计第二屏蔽线或第二屏蔽带的密度、连接方式。例如,可以将多个第二屏蔽线或第二屏蔽带布置成为包围电子部件20的网状壳体屏蔽结构,以提供局部和/或全局屏蔽。In some embodiments, as shown in FIG. 4 , a second shield wire or second shield tape may be connected, for example, from
应当理解的是,半导体封装中可以设置任何数量的电子部件10。电子部件10可以包括但不限于集成电路、有源器件、无源器件、二极管、晶体管、连接器、电阻器、电感器、电容器、微机电系统(MEMS)、其组合等。It should be understood that any number of
本文中的屏蔽线和/或屏蔽带可以被预先制造并且然后经由拾取和放置技术而附接到衬底10。第一屏蔽线和/或屏蔽带可以通过其与接地焊盘14(例如包括银或铜)的连接而连接到衬底10。第一屏蔽线屏蔽线和/或屏蔽带可以包括金、银或铜、铝、和/或其它适合的金属及其组合。第二屏蔽线和/或屏蔽带可以通过其与屏蔽焊盘41(例如包括银或铜)的连接而连接到第二中介层40。第二屏蔽线和/或屏蔽带可以包括金、银或铜、铝、和/或其它适合的金属及其组合。The shielding wires and/or shielding tapes herein may be pre-manufactured and then attached to the
作为示例,线的直径可以大致在大约6微米到大约80毫米的范围中,示例性直径/半径为大约2mm。带的直径可以为大致15微米到大致80毫米,示例性直径为大致2mm。在一些实施例中,当存在多个电子部件20时,并非所有电子部件都被第一屏蔽结构和第二屏蔽结构覆盖。As an example, the diameter of the wire may be approximately in the range of about 6 microns to about 80 millimeters, with an exemplary diameter/radius being about 2 mm. The diameter of the tape may be approximately 15 microns to approximately 80 millimeters, with an exemplary diameter of approximately 2 mm. In some embodiments, when multiple
以上已经描述了本公开的各实施例,上述说明是示例性的,并非穷尽性的,并且也不限于所公开的各实施例。在不偏离所说明的各实施例的范围和精神的情况下,对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。本文中所用术语的选择,旨在最好地解释各实施例的原理、实际应用或对市场中的技术的改进,或者使本技术领域的其他普通技术人员能理解本文公开的各实施例。Various embodiments of the present disclosure have been described above, and the foregoing descriptions are exemplary, not exhaustive, and not limiting of the disclosed embodiments. Numerous modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or improvement over the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201922495894.7U CN211238248U (en) | 2019-12-31 | 2019-12-31 | Semiconductor package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201922495894.7U CN211238248U (en) | 2019-12-31 | 2019-12-31 | Semiconductor package |
Publications (1)
Publication Number | Publication Date |
---|---|
CN211238248U true CN211238248U (en) | 2020-08-11 |
Family
ID=71923982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201922495894.7U Expired - Fee Related CN211238248U (en) | 2019-12-31 | 2019-12-31 | Semiconductor package |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN211238248U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111081696A (en) * | 2019-12-31 | 2020-04-28 | 青岛歌尔智能传感器有限公司 | Semiconductor package and method of making semiconductor package |
-
2019
- 2019-12-31 CN CN201922495894.7U patent/CN211238248U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111081696A (en) * | 2019-12-31 | 2020-04-28 | 青岛歌尔智能传感器有限公司 | Semiconductor package and method of making semiconductor package |
CN111081696B (en) * | 2019-12-31 | 2025-05-09 | 青岛歌尔智能传感器有限公司 | Semiconductor package and method of manufacturing semiconductor package |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5557142A (en) | Shielded semiconductor device package | |
CN106816431B (en) | Electromagnetic shielding packaging structure and manufacturing method thereof | |
US20220254695A1 (en) | Embedded package structure and preparation method therefor, and terminal | |
TW201232745A (en) | Package module with EMI shielding | |
JP2003273571A (en) | Inter-element interference radio wave shield type high frequency module | |
CN212991092U (en) | Packaging module, module carrier plate and electronic equipment | |
CN106206547B (en) | A kind of integrated circuit package structure and its manufacturing method | |
CN107680912A (en) | The chip-packaging structure and method for packing of EMI protection | |
CN114300446B (en) | Chip stacking shielding structure and manufacturing method thereof | |
US9245854B2 (en) | Organic module EMI shielding structures and methods | |
CN102446870A (en) | Encapsulation with electrostatic discharge and anti-electromagnetic interference | |
CN206364008U (en) | A kind of semiconductor package part with electro-magnetic screen function | |
CN211238248U (en) | Semiconductor package | |
TWI484616B (en) | Package module with emi shielding | |
WO2021008228A1 (en) | Sip encapsulation structure | |
CN209161474U (en) | Combination sensor | |
KR101056748B1 (en) | Semiconductor package with electromagnetic shielding means | |
CN111081696B (en) | Semiconductor package and method of manufacturing semiconductor package | |
WO2025092154A1 (en) | Optical packaging chip and manufacturing method therefor, and electronic device | |
JP4057968B2 (en) | Electronic equipment | |
KR100698570B1 (en) | Package device with electromagnetic interference shield | |
CN104409447A (en) | Embedded capacitor-containing semiconductor package and manufacturing method thereof | |
TW201214650A (en) | Chip package having fully covering shield connected to GND ball | |
CN114823557B (en) | Fan-out double-sided packaging structure and preparation method of fan-out double-sided packaging structure | |
JP2002026178A (en) | Semiconductor device, method of manufacturing the same, and electronic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200811 |