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CN102446870A - Encapsulation with electrostatic discharge and anti-electromagnetic interference - Google Patents

Encapsulation with electrostatic discharge and anti-electromagnetic interference Download PDF

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Publication number
CN102446870A
CN102446870A CN2010105086833A CN201010508683A CN102446870A CN 102446870 A CN102446870 A CN 102446870A CN 2010105086833 A CN2010105086833 A CN 2010105086833A CN 201010508683 A CN201010508683 A CN 201010508683A CN 102446870 A CN102446870 A CN 102446870A
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carrier
package
electrostatic discharge
electromagnetic interference
electrically connected
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蔡宗贤
朱恒正
钟兴隆
杨超雅
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Siliconware Precision Industries Co Ltd
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Siliconware Precision Industries Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Elimination Of Static Electricity (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention relates to a packaging part with electrostatic discharge and electromagnetic wave interference prevention, comprising: a carrier having electrically isolated first and second ground structures; a semiconductor element disposed on one surface of the carrier and electrically connected to the first ground structure; and a covering member covering the carrier and the semiconductor element and electrically connected to the second grounding structure. The invention makes the semiconductor element and the covering component respectively electrically connected with the first and the second grounding structures to respectively conduct and remove the charges of static electricity and electromagnetic waves, and prevents the semiconductor element from being damaged by the static electricity, thereby improving the yield and avoiding the occurrence of short circuit.

Description

具有静电放电及防电磁波干扰的封装件Encapsulation with electrostatic discharge and anti-electromagnetic interference

技术领域 technical field

本发明涉及一种封装件,尤其涉及一种具有静电放电及避免电磁波干扰的封装件。The invention relates to a package, in particular to a package with electrostatic discharge and avoiding electromagnetic wave interference.

背景技术 Background technique

随着科技的快速发展,各种新的产品不断推陈出新,为了满足消费者方便使用及携带容易的需求,现今各式电子产品无不朝向轻、薄、短、小发展;其中,半导体封装件(Semiconductor Package)为一种将半导体芯片(chip)电性连接在一封装基板的承载件上,再以例如环氧树脂的封装胶体包覆该半导体芯片及承载件,以通过该封装胶体保护该半导体芯片及承载件,并避免外界水气或污染物的侵害,再在该封装胶体上罩设一金属壳的覆盖构件;或仅在该半导体芯片及承载件上罩设一金属壳的覆盖构件,以通过该覆盖构件保护该半导体芯片免受外界影响(如静电放电(ESD)等)而受损,并通过该覆盖构件阻挡内外部的电磁干扰(Electro-Magnetic Interference,EMI)及电磁兼容性(Electro-Magnetic Compatibility,EMC)。With the rapid development of science and technology, various new products are constantly being introduced. In order to meet the needs of consumers for easy use and portability, all kinds of electronic products are now developing towards light, thin, short and small. Among them, semiconductor packages (Semiconductor Package) is a method of electrically connecting a semiconductor chip (chip) to a carrier of a packaging substrate, and then covering the semiconductor chip and the carrier with an encapsulant such as epoxy resin, so as to protect the semiconductor chip through the encapsulant and the carrier, and avoid external moisture or pollutants, and then cover the encapsulant with a metal shell covering member; or only cover the semiconductor chip and the carrier with a metal shell covering member, so as to Protect the semiconductor chip from damage by external influences (such as electrostatic discharge (ESD), etc.) by the covering member, and block internal and external electromagnetic interference (Electro-Magnetic Interference, EMI) and electromagnetic compatibility (Electromagnetic Compatibility) by the covering member. -Magnetic Compatibility, EMC).

而现有的封装构件或系统级封装(System in Package,SiP或SystemIntegrated Package,SIP)的接地系统,通过该设于外部的覆盖构件与其自身的接地结构电性连接,再与系统大地电性连接,从而导除外部的电磁及静电电荷。The grounding system of the existing packaging component or system-level package (System in Package, SiP or System Integrated Package, SIP) is electrically connected to its own grounding structure through the external covering component, and then electrically connected to the system ground , thereby leading to the removal of external electromagnetic and electrostatic charges.

第5,166,772号美国专利提出一种具有网状金属罩盖的半导体封装件。如图1A及1B所示,该第5,166,772号美国专利所揭示的半导体封装件在基板10上接置一网状金属罩盖(Meshed Metallic Shield)12,将芯片11收纳其中,再以封装胶体13将该网状金属罩盖12及芯片11完全包覆。该半导体封装件通过该网状金属罩盖12的提供,以遮蔽芯片11所产生的电磁波干扰或由外部装置所产生的电磁波干扰,其中,该网状金属罩盖12电性连接该基板10的接地线路14。US Patent No. 5,166,772 proposes a semiconductor package with a mesh metal cover. As shown in Figures 1A and 1B, the semiconductor package disclosed in the US Patent No. 5,166,772 is connected with a meshed metal cover (Meshed Metallic Shield) 12 on the substrate 10, and the chip 11 is accommodated therein, and then the encapsulation compound 13 The mesh metal cover 12 and the chip 11 are completely covered. The semiconductor package is provided with the mesh metal cover 12 to shield the electromagnetic wave interference generated by the chip 11 or the electromagnetic wave interference generated by an external device, wherein the mesh metal cover 12 is electrically connected to the substrate 10 ground line 14.

请参阅图2,为第6,187,613号美国专利所揭示的另一现有半导体封装件的剖视示意图。如图所示,在基板10上通过凸块15以倒装片(flip-chip)方式接置一芯片11,又在该基板10及芯片11上黏附盖设一金属箔16,且在该金属箔16与基板10之间填充封装胶体13。该半导体封装件通过该外设于封装胶体13上的金属箔16,以遮蔽芯片11所产生的电磁波干扰或由外部装置所产生的电磁波干扰。Please refer to FIG. 2 , which is a schematic cross-sectional view of another conventional semiconductor package disclosed in US Pat. No. 6,187,613. As shown in the figure, on the substrate 10, a chip 11 is connected in a flip-chip (flip-chip) manner through a bump 15, and a metal foil 16 is adhered and covered on the substrate 10 and the chip 11, and the metal The encapsulant 13 is filled between the foil 16 and the substrate 10 . The semiconductor package shields the electromagnetic wave interference generated by the chip 11 or the electromagnetic wave interference generated by the external device through the metal foil 16 externally disposed on the encapsulant 13 .

但是,上述的这些封装件的接地方式,都通过网状金属罩盖或金属箔电性连接至芯片及主/被动元件的接地线路,当半导体封装件接置于电路板上时,若该网状金属罩盖或金属箔带有静电,则该静电会沿该接地线路的路径朝电路板及芯片及主/被动元件传导,静电传导至芯片及主/被动元件时发生静电释放,就容易造成芯片及主/被动元件损坏。However, the above-mentioned grounding methods of these packages are all electrically connected to the chip and the grounding lines of the active/passive components through the mesh metal cover or metal foil. When the semiconductor package is connected to the circuit board, if the net If the metal cover or metal foil has static electricity, the static electricity will be conducted along the path of the grounding line to the circuit board, chip and active/passive components. The chip and active/passive components are damaged.

再者,该网状金属罩盖或金属箔连接到系统大地的路径过长,尤其现有基板10小于六层线路时,因线路过多致使该接地线路的接地效果降低,使得电荷不易释放,而有可能导致该芯片或其它主/被动元件内部损坏。Furthermore, the path connecting the meshed metal cover or metal foil to the system ground is too long, especially when the existing substrate 10 is less than six layers of lines, the grounding effect of the grounding line is reduced due to too many lines, making it difficult to release the charge. It may cause internal damage to the chip or other active/passive components.

因此,如何提供一种封装件,能避免内部的芯片或主/被动元件被静电破坏,且具有良好的静电防护并兼具放电与防电磁波干扰的功能,实为一重要课题。Therefore, how to provide a package that can prevent internal chips or active/passive components from being damaged by static electricity, and has good electrostatic protection and has both functions of discharge and electromagnetic interference prevention is an important issue.

发明内容 Contents of the invention

鉴于上述现有技术的种种缺失,本发明揭露一种具有静电防护及防电磁波干扰的封装件,包括:承载件,具有相对的第一及第二表面,且该承载件具有电性绝缘的第一接地结构及第二接地结构;至少一个半导体元件,接置于该承载件的第一表面上,且电性连接至该承载件及其第一接地结构;以及覆盖构件,盖设于该承载件第一表面上以覆盖该半导体元件,且该覆盖构件电性连接该第二接地结构。In view of the various deficiencies of the above-mentioned prior art, the present invention discloses a package with electrostatic protection and anti-electromagnetic interference, including: a carrier with opposite first and second surfaces, and the carrier has an electrically insulating first surface A grounding structure and a second grounding structure; at least one semiconductor element, placed on the first surface of the carrier, and electrically connected to the carrier and its first grounding structure; and a covering member, covered on the carrier on the first surface of the component to cover the semiconductor element, and the covering member is electrically connected to the second grounding structure.

在上述的封装件中,该第二接地结构设于该承载件的周围或四个角落,该承载件的第二表面植设有多个导电元件,且各该导电元件电性连接该第一接地结构及第二接地结构。In the above package, the second grounding structure is disposed around or at four corners of the carrier, a plurality of conductive elements are implanted on the second surface of the carrier, and each of the conductive elements is electrically connected to the first a ground structure and a second ground structure.

在一具体实施例中,该第二接地结构直接贯穿该第一及第二表面的导电孔,且该覆盖构件接置在该导电孔在第一表面的终端。In a specific embodiment, the second ground structure directly passes through the conductive holes on the first and second surfaces, and the covering member is connected to the terminal of the conductive holes on the first surface.

上述的具有静电放电及防电磁波干扰的封装件,该承载件还具有内部线路。In the above package with electrostatic discharge and anti-electromagnetic interference, the carrier also has an internal circuit.

根据上述的封装件,该半导体元件以引线接合(wire bonding)方式或倒装片(flip-chip)方式电性连接该承载件的内部线路及第一接地结构;该半导体元件选自如芯片的主动元件、被动元件或其二者;该被动元件为电容、电阻或电感。According to the above-mentioned package, the semiconductor element is electrically connected to the internal circuit of the carrier and the first ground structure by wire bonding or flip-chip; the semiconductor element is selected from active components such as chips. component, passive component, or both; the passive component is a capacitor, resistor, or inductor.

根据上所述的封装件,该第二表面上设有虚垫,该第二接地结构电性连接该虚垫,且该虚垫位于该承载件周围或四个角落以外的位置。According to the above package, a dummy pad is provided on the second surface, the second ground structure is electrically connected to the dummy pad, and the dummy pad is located around the carrier or outside the four corners.

又在上述的封装件中,还包括封装材料,包覆该半导体元件,且该覆盖构件形成于该封装材料上。Furthermore, in the above-mentioned package, an encapsulation material is further included to cover the semiconductor element, and the covering member is formed on the encapsulation material.

所述的具有静电放电及防电磁波干扰的封装件,还包括封装材料,包覆该覆盖构件。The package with electrostatic discharge and anti-electromagnetic interference further includes a package material covering the covering member.

由上可知,本发明具有静电防护及防电磁波干扰的封装件的该承载件具有电性绝缘的第一及第二接地结构,使该半导体元件及覆盖构件分别电性连接该第一接地结构及第二接地结构,当封装件接置于电路板时,若覆盖构件带有静电,令静电荷能由该覆盖构件经第二接地结构直接传导至电路板,而不会经由该第一接地结构,使该半导体元件不会受到静电释放的影响而得到保护;且能通过该覆盖构件阻挡外部的电磁波及射频等干扰,并通过该第二接地结构释放电荷,以避免该半导体元件受干扰。It can be seen from the above that the carrier of the package with electrostatic protection and anti-electromagnetic interference of the present invention has electrically insulated first and second grounding structures, so that the semiconductor element and the covering member are electrically connected to the first grounding structure and the second grounding structure respectively. The second grounding structure, when the package is connected to the circuit board, if the covering member is charged with static electricity, the static charge can be directly conducted from the covering member to the circuit board through the second grounding structure instead of passing through the first grounding structure , so that the semiconductor element will not be protected from electrostatic discharge; and the covering member can block external electromagnetic waves and radio frequency interference, and discharge charges through the second grounding structure, so as to prevent the semiconductor element from being disturbed.

附图说明 Description of drawings

图1A及1B为第5,166,772号美国专利所揭示的半导体封装件的立体示意图;1A and 1B are three-dimensional schematic diagrams of a semiconductor package disclosed in US Pat. No. 5,166,772;

图2为美国专利第6,187,613号所揭露的半导体封装件的剖视示意图;2 is a schematic cross-sectional view of a semiconductor package disclosed in US Pat. No. 6,187,613;

图3A、3B及3C为本发明具有静电放电及防电磁波干扰的封装件的不同实施例的剖视示意图;3A, 3B and 3C are schematic cross-sectional views of different embodiments of the package with electrostatic discharge and anti-electromagnetic interference of the present invention;

图4A及4B为本发明具有静电放电及防电磁波干扰的封装件的承载件的仰视图;以及4A and 4B are bottom views of the carrier of the package with electrostatic discharge and anti-electromagnetic interference of the present invention; and

图4B’是具有图4B承载件的本发明封装件的剖视图。Figure 4B' is a cross-sectional view of the package of the present invention with the carrier of Figure 4B.

主要组件符号说明Explanation of main component symbols

10基板                11芯片10 Substrates 11 Chips

12网状金属罩盖        13封装胶体12 Mesh metal cover 13 Encapsulation colloid

14接地线路            15、342凸块14 grounding line 15, 342 bumps

16金属箔              20封装件16 foils 20 packages

31承载件              310内部线路31 Carrier 310 Internal circuit

311第一接地结构       312第二接地结构311 First grounding structure 312 Second grounding structure

31a第一表面           31b第二表面31a first surface 31b second surface

32半导体元件          33覆盖构件32 Semiconductor components 33 Covering components

321芯片               322被动元件321 chip 322 passive components

341导线               35导电元件341 wires 35 conductive components

331接触部             312a导电孔331 contact part 312a conductive hole

313、313’焊垫        36电路板313, 313' pad 36 circuit board

37a、37b封装材料37a, 37b packaging material

具体实施方式 Detailed ways

以下通过特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其它优点及功效。Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

请参阅图3A、3B及3C,为本发明的具有静电放电及防电磁波干扰的封装件的不同实施例的剖视示意图。Please refer to FIGS. 3A , 3B and 3C , which are schematic cross-sectional views of different embodiments of the package with electrostatic discharge and anti-electromagnetic interference of the present invention.

本发明提供一种具有静电放电及防电磁波干扰的封装件,包括:承载件31、至少一个半导体元件32及覆盖构件33。The present invention provides a package with electrostatic discharge and anti-electromagnetic interference, including: a carrier 31 , at least one semiconductor element 32 and a covering member 33 .

所述的承载件31,包括球栅阵列基板(BGA substrate)或平面栅阵列式(LGA)基板,该承载件31具有相对的第一表面31a及第二表面31b,且该承载件31具有内部线路310(包含信号与电力部分)、及电性绝缘的第一接地结构311与第二接地结构312。The carrier 31 includes a ball grid array substrate (BGA substrate) or a land grid array (LGA) substrate, the carrier 31 has opposite first surfaces 31a and second surfaces 31b, and the carrier 31 has an internal The circuit 310 (including signal and power parts), and the electrically insulated first ground structure 311 and the second ground structure 312 .

所述的半导体元件32选自如芯片321的主动元件、被动元件322、或其二者,该被动元件322为电容、电阻或电感;且该半导体元件32接置于该承载件31的第一表面31a上,并且以引线接合方式的导线341(如图3A所示)或倒装片方式的凸块(bump)342(如图3B所示)电性连接该承载件31的内部线路310及第一接地结构311。The semiconductor element 32 is selected from an active element such as a chip 321, a passive element 322, or both, and the passive element 322 is a capacitor, a resistor or an inductor; and the semiconductor element 32 is placed on the first surface of the carrier 31 31a, and electrically connect the internal circuit 310 of the carrier 31 with the wire 341 of the wire bonding method (as shown in FIG. A ground structure 311 .

所述的覆盖构件33,盖设于该承载件31的第一表面31a上以覆盖该半导体元件32上,且该覆盖构件33电性连接该第二接地结构312。The covering member 33 is disposed on the first surface 31 a of the carrier 31 to cover the semiconductor device 32 , and the covering member 33 is electrically connected to the second ground structure 312 .

上述的封装件可先进行模压(molding)以形成包覆该半导体元件32的封装材料37a,再在该封装材料37a上溅镀金属层以形成该覆盖构件33(如图3A与3B所示);或者,在盖设已预先成型的该覆盖构件33之后,再进行第二次模压以形成包覆该覆盖构件33的封装材料37b(如图3C所示)。The above package can be molded first to form a packaging material 37a covering the semiconductor element 32, and then a metal layer is sputtered on the packaging material 37a to form the covering member 33 (as shown in FIGS. 3A and 3B ). or, after covering the preformed covering member 33, perform a second molding to form the encapsulating material 37b covering the covering member 33 (as shown in FIG. 3C ).

在优选实施例中,该第二接地结构312直接贯穿该第一表面31a及第二表面31b的导电孔312a,以缩短电性传导路径,且该覆盖构件33接置在该导电孔312a在第一表面31a的终端。In a preferred embodiment, the second grounding structure 312 directly penetrates the conductive holes 312a of the first surface 31a and the second surface 31b to shorten the electrical conduction path, and the covering member 33 is connected to the conductive hole 312a at the second Termination of a surface 31a.

根据上述的封装件,该承载件的第二表面31b植设有多个导电元件35,该导电元件35可为焊球、焊针或焊垫,且各该导电元件35电性连接该内部线路310、第一接地结构311及第二接地结构312;然后将封装件接置于电路板36上,使半导体元件32的信号或电力可通过内部线路310及导电元件35传导,并通过第一接地结构311电性连接至电路板36的接地结构(未图示),而覆盖构件33可通过第二接地结构312及导电元件35以电性连接该电路板36。According to the above package, the second surface 31b of the carrier is implanted with a plurality of conductive elements 35, the conductive elements 35 can be solder balls, solder pins or pads, and each of the conductive elements 35 is electrically connected to the internal circuit 310, the first ground structure 311 and the second ground structure 312; then the package is placed on the circuit board 36, so that the signal or power of the semiconductor element 32 can be conducted through the internal circuit 310 and the conductive element 35, and through the first ground The structure 311 is electrically connected to the ground structure (not shown) of the circuit board 36 , and the cover member 33 can be electrically connected to the circuit board 36 through the second ground structure 312 and the conductive element 35 .

又依上所述,该导电元件35直接设于该第二接地结构312的下方,且该第二接地结构312垂直穿设于该覆盖构件33的下方,从而缩短传导路径,从而能加速电荷释放的速度。According to the above, the conductive element 35 is directly disposed under the second ground structure 312, and the second ground structure 312 is vertically penetrated under the cover member 33, so as to shorten the conduction path and accelerate the discharge of charges. speed.

由上述可知,该半导体元件32电性连接该承载件31的第一接地结构311,而该覆盖构件33电性连接该第二接地结构312,当封装件接置于电路板36时,若覆盖构件33或封装件带有静电时,则该静电荷能由该覆盖构件33经第二接地结构312直接朝电路板36释放排除,而不会经由第一接地结构311,使该半导体元件32不会受到静电电荷的影响,从而使该半导体元件32能得到保护而不致于损坏。It can be known from the above that the semiconductor element 32 is electrically connected to the first ground structure 311 of the carrier 31, and the covering member 33 is electrically connected to the second ground structure 312. When the package is connected to the circuit board 36, if the cover When the component 33 or the package is charged with static electricity, the static charge can be discharged directly toward the circuit board 36 by the covering component 33 through the second ground structure 312 instead of going through the first ground structure 311, so that the semiconductor element 32 will not It will be affected by electrostatic charges, so that the semiconductor element 32 can be protected from damage.

再者,能通过该覆盖构件33阻挡外部的电磁干扰(EMI)及电磁兼容性(EMC),并通过该第二接地结构312释放电荷,以避免该半导体元件32受干扰;而该半导体元件32内部的静电荷、电磁波、及射频等干扰则能单独由该第一接地结构311进行释放,从而以保护该半导体元件32。Furthermore, the covering member 33 can block external electromagnetic interference (EMI) and electromagnetic compatibility (EMC), and discharge charges through the second ground structure 312, so as to prevent the semiconductor element 32 from being disturbed; and the semiconductor element 32 The internal electrostatic charge, electromagnetic wave, and radio frequency interference can be released by the first ground structure 311 alone, so as to protect the semiconductor element 32 .

请参阅图4A及4B,为该承载件31的仰视图;如图4A所示,在此优选实施例中,该第二接地结构312在第二表面31b上所连接的焊垫313设于该承载件31的周围或四个角落,从而提供该覆盖构件33以其延伸至四周或角落的接触部331(如图3A至3C所示)电性连接该第二接地结构312与焊垫313。具体实施上,该第二接地结构312可为设于该承载件31的周围或四个角落的导电孔312a。同理,连接该第二接地结构312的导电元件35也对应设于该承载件31第二表面31b的周围或四个角落的焊垫313上。Please refer to FIGS. 4A and 4B, which are bottom views of the carrier 31; as shown in FIG. The periphery or four corners of the carrier 31 provide the covering member 33 with its contact portion 331 extending to the periphery or corners (as shown in FIGS. 3A to 3C ) to electrically connect the second ground structure 312 and the pad 313 . Specifically, the second grounding structure 312 can be conductive holes 312 a disposed around or at four corners of the carrier 31 . Similarly, the conductive elements 35 connected to the second ground structure 312 are correspondingly disposed around the second surface 31 b of the carrier 31 or on the pads 313 at four corners.

在图4B及4B’所示的另一实施例中,该第二接地结构312在第二表面31b上所连接的焊垫313’也可设于该承载件31的周围或四个角落以外的位置,例如较为内排的位置,且该焊垫313’可为虚垫(dummypad),只要其所电性连接的第二接地结构312与第一接地结构311为独立且电性绝缘即可。In another embodiment shown in FIGS. 4B and 4B', the solder pads 313' to which the second ground structure 312 is connected on the second surface 31b can also be provided around the carrier 31 or outside the four corners. The position, for example, the inner row position, and the welding pad 313 ′ can be a dummy pad, as long as the second ground structure 312 and the first ground structure 311 electrically connected to it are independent and electrically insulated.

综上所述,本发明具有静电放电及防电磁波干扰的封装件的该承载件具有电性隔绝的第一接地结构及第二接地结构,使该半导体元件电性连接该承载件的第一接地结构,而该覆盖构件电性连接该第二接地结构,当封装件接置于电路板时,若覆盖构件带有静电,该静电荷能由该覆盖构件经第二接地结构直接传导至电路板,而不会经由该第一接地结构,使该半导体元件不会受到静电释放的影响而得到保护,不致于损坏;且能通过该覆盖构件阻挡外部的电磁波及射频等干扰,并通过该第二接地结构释放电荷,以避免该半导体元件受干扰。To sum up, in the present invention, the carrier with the electrostatic discharge and anti-electromagnetic interference package has an electrically isolated first ground structure and a second ground structure, so that the semiconductor element is electrically connected to the first ground of the carrier. structure, and the covering member is electrically connected to the second grounding structure. When the package is connected to the circuit board, if the covering member has static electricity, the electrostatic charge can be directly conducted from the covering member to the circuit board through the second grounding structure , without going through the first grounding structure, so that the semiconductor element will not be affected by electrostatic discharge and will not be damaged; and the covering member can block external electromagnetic waves and radio frequency interference, and pass through the second The ground structure discharges the charge to prevent the semiconductor element from being disturbed.

上述实施例用以示例性说明本发明的原理及其功效,而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求所列。The above-mentioned embodiments are used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be listed in the claims.

Claims (11)

1.一种具有静电放电及防电磁波干扰的封装件,其特征在于,包括:1. A package with electrostatic discharge and anti-electromagnetic interference, characterized in that it comprises: 承载件,具有相对的第一及第二表面,且该承载件具有电性绝缘的第一接地结构及第二接地结构;The carrier has opposite first and second surfaces, and the carrier has a first ground structure and a second ground structure that are electrically insulated; 至少一个半导体元件,接置于该承载件的第一表面上,且电性连接至该承载件及其第一接地结构;以及at least one semiconductor device mounted on the first surface of the carrier and electrically connected to the carrier and its first ground structure; and 覆盖构件,盖设于该承载件第一表面上以覆盖该半导体元件,且该覆盖构件电性连接该第二接地结构。A covering member is disposed on the first surface of the carrier to cover the semiconductor element, and the covering member is electrically connected to the second grounding structure. 2.根据权利要求1所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该第二接地结构设于该承载件的周围或四个角落。2 . The package with electrostatic discharge and anti-electromagnetic interference according to claim 1 , wherein the second grounding structure is arranged around or at four corners of the carrier. 3 . 3.根据权利要求2所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该承载件的第二表面植设有多个导电元件,且各该导电元件电性连接该第一接地结构及第二接地结构。3. The package with electrostatic discharge and anti-electromagnetic interference according to claim 2, wherein a plurality of conductive elements are implanted on the second surface of the carrier, and each conductive element is electrically connected to the first a ground structure and a second ground structure. 4.根据权利要求2所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该第二接地结构直接贯穿该第一及第二表面的导电孔,且该覆盖构件接置在该导电孔在第一表面的终端。4. The package with electrostatic discharge and anti-electromagnetic interference according to claim 2, wherein the second grounding structure directly passes through the conductive holes on the first and second surfaces, and the covering member is placed on the The conductive via terminates in the first surface. 5.根据权利要求1所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该承载件还具有内部线路。5 . The package with electrostatic discharge and anti-electromagnetic interference according to claim 1 , wherein the carrier further has an internal circuit. 6 . 6.根据权利要求5所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该半导体元件以引线接合方式或倒装片方式电性连接该承载件的内部线路及第一接地结构。6. The package with electrostatic discharge and anti-electromagnetic interference according to claim 5, wherein the semiconductor element is electrically connected to the internal circuit of the carrier and the first grounding structure by wire bonding or flip-chip . 7.根据权利要求1所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该半导体元件选自主动元件、被动元件、或其二者。7 . The package with electrostatic discharge and anti-electromagnetic interference according to claim 1 , wherein the semiconductor element is selected from active elements, passive elements, or both. 8.根据权利要求1所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该第二表面上设有虚垫,该第二接地结构电性连接该虚垫。8 . The package with electrostatic discharge and anti-electromagnetic interference according to claim 1 , wherein a dummy pad is provided on the second surface, and the second grounding structure is electrically connected to the dummy pad. 9.根据权利要求8所述的具有静电放电及防电磁波干扰的封装件,其特征在于,该虚垫位于该承载件周围或四个角落以外的位置。9 . The package with electrostatic discharge and anti-electromagnetic interference according to claim 8 , wherein the dummy pads are located around the carrier or outside the four corners. 10.根据权利要求1所述的具有静电放电及防电磁波干扰的封装件,其特征在于,还包括封装材料,包覆该半导体元件,且该覆盖构件形成于该封装材料上。10 . The package with electrostatic discharge and anti-electromagnetic interference according to claim 1 , further comprising an encapsulation material covering the semiconductor device, and the covering member is formed on the encapsulation material. 11 . 11.根据权利要求1所述的具有静电放电及防电磁波干扰的封装件,其特征在于,还包括封装材料,包覆该覆盖构件。11 . The package with electrostatic discharge and anti-electromagnetic interference according to claim 1 , further comprising a package material covering the covering member. 12 .
CN2010105086833A 2010-10-13 2010-10-13 Encapsulation with electrostatic discharge and anti-electromagnetic interference Pending CN102446870A (en)

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Application publication date: 20120509