CN210187491U - Spiral photoresist coating structure and preparation device thereof - Google Patents
Spiral photoresist coating structure and preparation device thereof Download PDFInfo
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- CN210187491U CN210187491U CN201920214825.1U CN201920214825U CN210187491U CN 210187491 U CN210187491 U CN 210187491U CN 201920214825 U CN201920214825 U CN 201920214825U CN 210187491 U CN210187491 U CN 210187491U
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Abstract
The utility model discloses a spiral photoresist coating structure and a preparation device thereof in the field of semiconductor packaging manufacture, which comprises a wafer, wherein the surface of the wafer is covered with a processing solvent layer and a photoresist layer, and the photoresist layer is spiral; the device comprises a machine body, wherein a circular rotating table is rotatably arranged on the upper side of the machine body, a rotating driving mechanism is arranged in the machine body, and a movable gluing mechanism is arranged above the rotating table; the preparation method comprises the following steps: the wafer is placed at the center of the rotary table, the vacuum chuck tightly sucks the wafer, the glue spraying arm sprays a processing solvent on the wafer, the rotary table is controlled to rotate, the glue spraying arm moves to the edge of the wafer to start to spray the photoresist, and the glue spraying arm moves towards the center of the wafer in the radial direction until the glue spraying arm moves to the upper portion of the center of the wafer to stop spraying the photoresist. The utility model discloses can reduce the photoresistance quantity and reduce photoresistance coating time for the photoresistance is more rationally distributed on the wafer surface, reduce cost.
Description
Technical Field
The utility model belongs to semiconductor package manufacturing field, in particular to spiral photoresistance coating structure and preparation facilities thereof.
Background
In the prior art, the photolithography technique refers to a technique of transferring a pattern on a mask to a substrate by means of a photoresist under the action of light. The main process is as follows: firstly, irradiating ultraviolet light on the surface of a substrate attached with a layer of photoresist film through a mask plate to cause the photoresist in an exposure area to generate chemical reaction; dissolving and removing the photoresist in the exposed area or the unexposed area by a developing technology, so that the pattern on the mask is copied to the photoresist film; finally, the pattern is transferred to the substrate by using an etching technology.
In the field of photolithography in semiconductor packaging manufacturing industry, there is a conventional photoresist coating process: the photoresist is completely sprayed at the center of the chip by the glue spraying device, after more photoresist is accumulated at the center of the chip, the chip is rotated, and the photoresist is gradually and uniformly opened, so that the photoresist at the center of the chip is uniformly covered on the surface of the chip to achieve the required photoresist thickness. The disadvantages are that: the price of the light resistance is high, the light resistance consumption of the process is large, and the cost is too high; photoresist at the glue spraying opening of the glue spraying device is exposed in the air to easily form a hard glue block, and the photoresist in a local area is uneven in thickness during coating; the air is slightly soluble in the photoresist, and the photoresist at the glue spraying opening part is heated and exploded in coating after being slightly soluble in the air, so that the local area is easy to lack of glue.
SUMMERY OF THE UTILITY MODEL
One of the objectives of the present invention is to provide a spiral photoresist coating structure, which can reduce the photoresist amount, so that the photoresist is more reasonably distributed on the wafer surface, thereby improving the qualification rate of wafer photoresist coating.
The purpose of the utility model is realized like this: the utility model provides a spiral photoresistance coating structure, includes the wafer, wafer surface covering is provided with handles solvent layer, it is provided with the light resistance layer to handle solvent layer top, the light resistance layer is the spiral, and the spiral light resistance layer includes a plurality of end to end's unit section, and adjacent outer unit section tail end links to each other with inlayer unit section head end, and the interval between two adjacent unit sections in the outside is greater than the interval between two adjacent unit sections in the inboard.
Compared with the prior art, the beneficial effects of the utility model reside in that: the viscosity of the photoresist on the surface of the wafer is reduced by processing the solvent so as to achieve the purpose that the photoresist can be diffused more quickly; the processing solvent layer formed on the surface of the wafer plays a role in protecting the film, so that the height difference of the concave-convex circuit on the surface of the wafer can be reduced, and the movement of the photoresist is more convenient; the non-equidistant spiral photoresist layer on the surface of the wafer is more reasonable in distribution, the photoresist amount can be reduced, the cost is reduced, the photoresist distribution qualification rate on the surface of the wafer can be guaranteed, and the subsequent photoetching process can be successfully carried out.
As a further improvement of the present invention, each of the head end and the tail end of the unit segment is located on the same diameter of the wafer. Each unit segment is in the form of a complete circle.
As a further improvement of the utility model, inboard the unit section tail end is located the central point of wafer and puts, and the wafer diameter is 195~205 mm. The technical scheme can ensure that the center of the wafer is covered with the photoresist.
As a further improvement of the present invention, the composition and content of the treatment solvent in the treatment solvent layer are: 69-71 wt% of propylene glycol methyl ether; the weight percentage of the propylene glycol monomethyl ether acetate is 29-31 wt%. The photoresist also contains solvent, the viscosity of the photoresist is determined by the content of the solvent, the wafer surface is contacted with the photoresist after forming a film-shaped processing solvent layer, the viscosity of the bottom of the photoresist layer can be reduced, the height difference of the concave-convex circuit on the wafer surface is reduced, and the photoresist is more easily pushed towards the wafer surface in a rotating state.
The second purpose of the utility model is to provide a preparation facilities of spiral photoresistance coating structure, can be when the wafer rotates, to the wafer surface spout processing solvent and photoresistance in proper order.
The purpose of the utility model is realized like this: the utility model provides a preparation facilities of spiral photoresistance coating structure, includes the fuselage, the fuselage upside rotationally is provided with circular revolving stage, and the inside rotary driving mechanism that is provided with of fuselage, be provided with a plurality of vacuum chuck on the revolving stage, the revolving stage top is provided with removal rubber coating mechanism, remove rubber coating mechanism and include fixed roof-rack, be provided with 2 at least guide rails on the fixed roof-rack, wherein 1 guide rail side axial is provided with the rack, and guide rail downside swing joint has the removal seat, and it is provided with and spouts gluey arm to correspond the revolving stage on the removal seat, spouts the spout axis and the revolving stage surface vertical of gluey arm, and it is provided with the motor cabinet to correspond rack an organic whole on the removal seat, installs motor one on the motor cabinet, and the output shaft of motor one upwards.
When the utility model works, the wafer is fixed by the vacuum chuck, the rotary table drives the wafer to rotate, the motor drives the gear to rotate along the rack, and the movable seat drives the glue spraying arm to move back and forth above the wafer in the radial direction; when the wafer rotates, the glue spraying arm moves along the radial direction of the wafer and sprays the photoresist on the wafer, so that a spiral photoresist can be formed on the surface of the wafer. Compared with the prior art, the beneficial effects of the utility model reside in that: the device can sequentially spray a processing solvent and a light resistance on the surface of the wafer when the wafer rotates.
As a further improvement, the rotary driving mechanism comprises a second motor, the second motor is vertically arranged, and the output end of the second motor is connected with the rotating shaft of the rotating platform through a speed reducer. And the second motor drives the rotating shaft of the rotating platform to rotate after being decelerated by the speed reducer, and the rotating platform is rotated.
The third purpose of the utility model is to provide a preparation method of spiral photoresistance coating structure can prepare out above-mentioned spiral photoresistance coating structure fast, reduces photoresistance coating time, improves photoresistance coating efficiency to reduce the photoresistance quantity, save time.
The purpose of the utility model is realized like this: a preparation method of a spiral photoresist coating structure comprises the following steps:
firstly, a wafer is placed at the center of a rotating table, a vacuum chuck tightly sucks the wafer, a glue spraying arm moves to a position 1-2 cm above the center of the wafer, and the cross section area of a spraying port of the glue spraying arm is 8-12 mm2Spraying a treatment solvent on the wafer by a glue spraying arm, and simultaneously rotating the rotary table at the rotating speed of 190-210 RPM for 50-60S to uniformly spread the treatment solvent on the surface of the wafer to form a treatment solvent layer with the thickness of 10-50 microns; and controlling the rotating platform to rotate at a rotating speed of 90-110 RPM, moving the glue spraying arm to a position 20-40 mm away from the edge of the wafer to start spraying the photoresist, moving the glue spraying arm radially towards the center of the wafer at a speed of 14-16 mm/S in the initial first 2S, then moving the glue spraying arm radially towards the center of the wafer at a speed of 11-14 mm/S in the last 2S, and finally moving the glue spraying arm radially towards the center of the wafer at a speed of 6-9 mm/S until the glue spraying arm moves to the position above the center of the wafer to stop spraying the photoresist.
Compared with the prior art, the beneficial effects of the utility model reside in that: the method sprays the processing solvent on the surface of the wafer and then rotates the wafer, so that the surface of the wafer can be slightly cleaned, the dirt on the surface is removed, and the coating of the photoresist is prevented from being influenced by impurities; the glue spraying arm moves from the edge of the wafer to the center in a variable speed mode to spray the photoresist, compared with the traditional method, the method can reduce the path of the photoresist from the center of the wafer to the edge, and the photoresist is easy to form hard blocks in the air, so that if the photoresist nozzle has the hard blocks, the photoresist nozzle can spray the photoresist on the edge of the wafer preferentially, and the hard blocks can be thrown out of the surface of the wafer in the rotating process, thereby reducing the occurrence of abnormity; because the photoresist has a certain viscosity, the nozzle sprays the photoresist from the edge of the wafer, when the photoresist contacts with air, the air is slightly melted into the photoresist at the nozzle to generate bubbles, and the bubbles are thrown out of the surface of the wafer in the subsequent rotation process. The method can reduce the amount of photoresist coating and shorten the photoresist coating time.
As the utility model discloses a further improvement, after spouting the photoresistance, the revolving stage rotates 18~22S with the rotational speed of 90~110RPM earlier, rotates 26~34S with the rotational speed of 700~900RPM again, rotates 1~2S with the rotational speed of 1900~2100RPM at last for the spiral on the wafer is photoresistance and evenly spreads out. By rotating, the photoresist layer is spread evenly on the wafer.
Drawings
FIG. 1 is a schematic diagram of a spiral photoresist coating structure.
FIG. 2 is a schematic structural diagram of a device for preparing a spiral photoresist coating structure.
Fig. 3 is a partially enlarged view of fig. 2.
Fig. 4 is a view taken along direction a of fig. 2.
Fig. 5 is a cross-sectional view taken along line BB of fig. 4.
The device comprises a wafer 1, a processing solvent layer 1a, a photoresist layer 2, a unit section 2a, a machine body 3, a rotating table 4, a vacuum chuck 4a, a rotating shaft 4b, a fixed top frame 5, a guide rail 6, a rack 7, a moving seat 8, a glue spraying arm 9, a motor seat 10, a motor I10 a, a motor II 11 and a speed reducer 12.
Detailed Description
Example 1
As shown in fig. 1-5, a spiral photoresist coating structure includes a wafer 1, a processing solvent layer 1a is covered on the surface of the wafer 1, a photoresist layer 2 is disposed above the processing solvent layer 1a, the photoresist layer 2 is spiral, the spiral photoresist layer 2 includes a plurality of unit segments 2a connected end to end, the tail end of the adjacent outer unit segment 2a is connected with the head end of the inner unit segment 2a, and the distance between the two adjacent unit segments 2a at the outer side is greater than the distance between the two adjacent unit segments 2a at the inner side. The leading end and the trailing end of each unit segment 2a are located on the same diameter of the wafer 1. The tail end of the inner unit segment 2a is positioned at the center of the wafer 1, and the diameter of the wafer 1 is 200 mm. The composition and content of the treatment solvent layer 1a are: propylene glycol methyl ether 70 wt%; propylene glycol monomethyl ether acetate was 30 wt%.
A preparation device of the spiral photoresist coating structure comprises a machine body 3, a circular rotating table 4 is rotatably arranged on the upper side of the machine body 3, a rotary driving mechanism is arranged in the machine body 3, a plurality of vacuum suckers 4a are arranged on the rotating table 4, a movable coating mechanism is arranged above the rotating table 4 and comprises a fixed top frame 5, at least 2 guide rails 6 are arranged on the fixed top frame 5, a rack 7 is axially arranged on the side surface of 1 guide rail 6, a movable base 8 is movably connected to the lower side of the guide rail 6, a glue spraying arm 9 is arranged on the movable base 8 corresponding to the rotating table 4, the spraying port axis of the glue spraying arm 9 is vertical to the surface of the rotating table 4, a motor base 10 is integrally arranged on the movable base 8 corresponding to the rack 7, a motor 10a is arranged on the motor base 10, and the output shaft of the motor 10a upwards, the gear is meshed with the rack 7. The rotary driving mechanism comprises a second motor 11, the second motor 11 is vertically arranged, and the output end of the second motor 11 is in transmission connection with the rotating shaft 4b of the rotating platform 4 through a speed reducer 12. The second motor 11 drives the rotating shaft 4b of the rotating platform 4 to rotate after being decelerated by the reducer 12, and the rotating platform 4 rotates.
A preparation method of the spiral photoresist coating structure comprises the following steps:
firstly, a wafer 1 is placed at the center of a rotating table 4, a vacuum chuck 4a tightly sucks the wafer 1, a glue spraying arm 9 moves to a position 1.5cm above the center of the wafer 1, and the cross section area of a spraying port of the glue spraying arm 9 is 10mm2Spraying a processing solvent on the wafer 1 by the glue spraying arm 9, and simultaneously rotating the rotating table 4 at a rotating speed of 200RPM for 55S to ensure that the processing solvent is uniformly spread on the surface of the wafer 1 to form a processing solvent layer 1a with the thickness of 30 microns; the rotation of the turntable 4 is controlled to keep rotating at a rotation speed of 100RPM, the glue spraying arm 9 moves to a position 30mm away from the edge of the wafer 1 to start spraying the photoresist, the glue spraying arm moves radially towards the center of the wafer 1 at a speed of 15mm/S in the initial first 2S, then moves radially towards the center of the wafer 1 at a speed of 12.5mm/S in the last 2S, and finally moves radially towards the center of the wafer 1 at a speed of 7.5mm/S until the glue spraying arm 9 moves to the position above the center of the wafer 1 to stop spraying the photoresist. After spraying the photoresist, the rotating table 4 rotates at 100RPM for 20S, then at 800RPM for 30S, and finally at 2000RPM for 1.5S, so that the spiral photoresist layer 2 on the wafer 1 is uniformly spread.
The coating amount of the photoresist of this example was measured to be 3.3g, and the coating time was measured to be 210 s.
Example 2
As shown in fig. 1-5, a spiral photoresist coating structure includes a wafer 1, a processing solvent layer 1a is covered on the surface of the wafer 1, a photoresist layer 2 is disposed above the processing solvent layer 1a, the photoresist layer 2 is spiral, the spiral photoresist layer 2 includes a plurality of unit segments 2a connected end to end, the tail end of the adjacent outer unit segment 2a is connected with the head end of the inner unit segment 2a, and the distance between the two adjacent unit segments 2a at the outer side is greater than the distance between the two adjacent unit segments 2a at the inner side. The leading end and the trailing end of each unit segment 2a are located on the same diameter of the wafer 1. The tail end of the inner unit segment 2a is positioned at the center of the wafer 1, and the diameter of the wafer 1 is 195 mm. The composition and content of the treatment solvent layer 1a are: propylene glycol methyl ether 71 wt%; propylene glycol monomethyl ether acetate 29 wt%.
A preparation device of the spiral photoresist coating structure comprises a machine body 3, a circular rotating table 4 is rotatably arranged on the upper side of the machine body 3, a rotary driving mechanism is arranged in the machine body 3, a plurality of vacuum suckers 4a are arranged on the rotating table 4, a movable coating mechanism is arranged above the rotating table 4 and comprises a fixed top frame 5, at least 2 guide rails 6 are arranged on the fixed top frame 5, a rack 7 is axially arranged on the side surface of 1 guide rail 6, a movable base 8 is movably connected to the lower side of the guide rail 6, a glue spraying arm 9 is arranged on the movable base 8 corresponding to the rotating table 4, the spraying port axis of the glue spraying arm 9 is vertical to the surface of the rotating table 4, a motor base 10 is integrally arranged on the movable base 8 corresponding to the rack 7, a motor 10a is arranged on the motor base 10, and the output shaft of the motor 10a upwards, the gear is meshed with the rack 7. The rotary driving mechanism comprises a second motor 11, the second motor 11 is vertically arranged, and the output end of the second motor 11 is in transmission connection with the rotating shaft 4b of the rotating platform 4 through a speed reducer 12. The second motor 11 drives the rotating shaft 4b of the rotating platform 4 to rotate after being decelerated by the reducer 12, and the rotating platform 4 rotates.
A preparation method of the spiral photoresist coating structure comprises the following steps:
firstly, a wafer 1 is placed at the center of a rotating table 4, a vacuum chuck 4a tightly sucks the wafer 1, a glue spraying arm 9 moves to a position 2cm above the center of the wafer 1, and the cross section area of a spraying port of the glue spraying arm 9 is 12mm2Spraying a processing solvent on the wafer 1 by the glue spraying arm 9, and simultaneously rotating the rotating table 4 at the rotating speed of 190RPM for 50S to ensure that the processing solvent is uniformly spread on the surface of the wafer 1 to form a processing solvent layer 1a with the thickness of 10 microns; the rotating table 4 is controlled to rotate at a rotating speed of 110RPM, and the glue spraying arm 9 moves to a position 20mm away from the edge of the wafer 1 to start sprayingThe photoresist moves radially towards the center of the wafer 1 at a speed of 16mm/S in the initial first 2S, then moves radially towards the center of the wafer 1 at a speed of 14mm/S in the second 2S, and finally moves radially towards the center of the wafer 1 at a speed of 9mm/S until the glue spraying arm 9 moves to the position above the center of the wafer 1 to stop spraying the photoresist. After spraying the photoresist, the rotating table 4 rotates at 90RPM for 22S, then at 700RPM for 34S, and finally at 1900RPM for 2S, so that the spiral photoresist layer 2 on the wafer 1 is uniformly spread.
The coating amount of the photoresist of this example was measured to be 3.4g, and the coating time was measured to be 212 s.
Example 3
As shown in fig. 1-5, a spiral photoresist coating structure includes a wafer 1, a processing solvent layer 1a is covered on the surface of the wafer 1, a photoresist layer 2 is disposed above the processing solvent layer 1a, the photoresist layer 2 is spiral, the spiral photoresist layer 2 includes a plurality of unit segments 2a connected end to end, the tail end of the adjacent outer unit segment 2a is connected with the head end of the inner unit segment 2a, and the distance between the two adjacent unit segments 2a at the outer side is greater than the distance between the two adjacent unit segments 2a at the inner side. The leading end and the trailing end of each unit segment 2a are located on the same diameter of the wafer 1. The tail end of the inner unit segment 2a is located at the center of the wafer 1, and the diameter of the wafer 1 is 205 mm. The composition and content of the treatment solvent layer 1a are: 69 wt% of propylene glycol methyl ether; propylene glycol monomethyl ether acetate was 31 wt%.
A preparation device of the spiral photoresist coating structure comprises a machine body 3, a circular rotating table 4 is rotatably arranged on the upper side of the machine body 3, a rotary driving mechanism is arranged in the machine body 3, a plurality of vacuum suckers 4a are arranged on the rotating table 4, a movable coating mechanism is arranged above the rotating table 4 and comprises a fixed top frame 5, at least 2 guide rails 6 are arranged on the fixed top frame 5, a rack 7 is axially arranged on the side surface of 1 guide rail 6, a movable base 8 is movably connected to the lower side of the guide rail 6, a glue spraying arm 9 is arranged on the movable base 8 corresponding to the rotating table 4, the spraying port axis of the glue spraying arm 9 is vertical to the surface of the rotating table 4, a motor base 10 is integrally arranged on the movable base 8 corresponding to the rack 7, a motor 10a is arranged on the motor base 10, and the output shaft of the motor 10a upwards, the gear is meshed with the rack 7. The rotary driving mechanism comprises a second motor 11, the second motor 11 is vertically arranged, and the output end of the second motor 11 is in transmission connection with the rotating shaft 4b of the rotating platform 4 through a speed reducer 12. The second motor 11 drives the rotating shaft 4b of the rotating platform 4 to rotate after being decelerated by the reducer 12, and the rotating platform 4 rotates.
A preparation method of the spiral photoresist coating structure comprises the following steps:
firstly, a wafer 1 is placed at the center of a rotating table 4, a vacuum chuck 4a tightly sucks the wafer 1, a glue spraying arm 9 moves to a position 1cm above the center of the wafer 1, and the cross section area of a spraying port of the glue spraying arm 9 is 8mm2Spraying a processing solvent on the wafer 1 by the glue spraying arm 9, and simultaneously rotating the rotating table 4 at the rotating speed of 210RPM for 60S to ensure that the processing solvent is uniformly spread on the surface of the wafer 1 to form a processing solvent layer 1a with the thickness of 50 microns; and controlling the rotating platform 4 to rotate at a rotating speed of 90RPM, moving the glue spraying arm 9 to a position 40mm away from the edge of the wafer 1 to start spraying the photoresist, firstly moving the glue spraying arm radially towards the center of the wafer 1 at a speed of 14mm/S in the initial first 2S, then moving the glue spraying arm radially towards the center of the wafer 1 at a speed of 11mm/S in the last 2S, and finally moving the glue spraying arm 9 radially towards the center of the wafer 1 at a speed of 6mm/S until the glue spraying arm 9 moves to the position above the center of the wafer 1 to stop spraying the photoresist. After spraying the photoresist, the turntable 4 rotates at 110RPM for 18S, 900RPM for 26S, and 2100RPM for 1S, so that the spiral photoresist layer 2 on the wafer 1 is uniformly spread.
The coating amount of the photoresist of this example was measured to be 3.2g, and the coating time was measured to be 208 s.
From the 3 examples above, the following table can be derived.
Comparative example: the traditional method is adopted, the photoresist is sprayed on the center of the wafer 1 through a glue spraying device, after more photoresist is accumulated on the center of the wafer 1, the wafer 1 is rotated, the photoresist is gradually and uniformly opened, the photoresist positioned on the center of the wafer 1 is uniformly covered on the surface of the wafer 1, the coating dosage of the photoresist is 6g, and the photoresist coating process time is 270S.
The comparison can result in: the utility model discloses a preparation method can significantly reduce the photoresistance coating quantity to shorten photoresistance coating time, reduce cost improves production efficiency.
The photoresist coating structure of the utility model reduces the photoresist viscosity on the surface of the wafer 1 by processing the solvent, so as to achieve the purpose that the photoresist can be diffused more quickly; the processing solvent layer 1a formed on the surface of the wafer 1 plays a role in protecting a film, so that the height difference of the concave-convex circuit on the surface of the wafer 1 can be reduced, and the movement of a light resistance is facilitated; the non-equidistant spiral photoresist layer 2 on the surface of the wafer 1 is more reasonable in distribution, the photoresist amount can be reduced, the cost is reduced, meanwhile, the photoresist distribution qualification rate on the surface of the wafer 1 can be guaranteed, and the subsequent photoetching process can be successfully carried out.
The preparation method of the utility model rotates the wafer 1 after the processing solvent is sprayed on the surface of the wafer 1, so that the surface of the wafer 1 can be slightly cleaned, the dirt on the surface can be removed, and the coating of the photoresist can be prevented from being influenced by the impurities; the glue spraying arm 9 moves from the edge of the wafer 1 to the center in a variable speed mode to spray the photoresist, compared with the traditional method, the method can reduce the path of the photoresist from the center to the edge of the wafer 1, and the photoresist is easy to form hard blocks in the air, so that if the photoresist nozzle has the hard blocks, the photoresist nozzle can be sprayed on the edge of the wafer 1 preferentially, the hard blocks can be thrown out of the surface of the wafer 1 in the rotating process, and the abnormal occurrence is reduced; because the photoresist has a certain viscosity, the nozzle sprays the photoresist from the edge of the wafer 1, when the photoresist contacts with air, the air slightly melts into the photoresist at the nozzle and bubbles are easily generated, and the bubbles are thrown out of the surface of the wafer 1 in the subsequent rotation process. The method can reduce the amount of photoresist coating and shorten the photoresist coating time.
The present invention is not limited to the above embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some replacements and transformations for some technical features without creative labor according to the disclosed technical contents, and these replacements and transformations are all within the protection scope of the present invention.
Claims (5)
1. The utility model provides a spiral photoresistance coating structure, includes the wafer, its characterized in that, wafer surface covering is provided with handles solvent layer, it is provided with the photoresist layer to handle solvent layer top, the photoresist layer is the spiral, and the spiral photoresist layer includes a plurality of end to end's unit section, and adjacent outer unit section tail end links to each other with inlayer unit section head end, and the interval between two adjacent unit sections in the outside is greater than the interval between two adjacent unit sections in the inboard.
2. The spiral photoresist coating structure of claim 1, wherein the head end and the tail end of each unit segment are located on the same diameter of the wafer.
3. The spiral photoresist coating structure according to claim 1 or 2, wherein the inner end of the unit segment is located at the center of the wafer, and the diameter of the wafer is 195-205 mm.
4. The manufacturing apparatus of a spiral photoresist coating structure according to any one of claims 1 to 3, comprising a machine body, wherein a circular rotating platform is rotatably disposed on the upper side of the machine body, a rotary driving mechanism is disposed inside the machine body, a plurality of vacuum chucks are disposed on the rotating platform, a movable coating mechanism is disposed above the rotating platform, the movable coating mechanism comprises a fixed top frame, at least 2 guide rails are disposed on the fixed top frame, wherein a rack is axially disposed on the side surface of 1 guide rail, a movable base is movably connected to the lower side of the guide rails, a coating arm is disposed on the movable base corresponding to the rotating platform, the spraying axis of the coating arm is perpendicular to the surface of the rotating platform, a motor base is integrally disposed on the movable base corresponding to the rack, a first motor is mounted on the motor base, and the output shaft of the first motor upwards passes, the gear is meshed with the rack.
5. The apparatus according to claim 4, wherein the rotation driving mechanism comprises a second motor, the second motor is vertically disposed, and an output end of the second motor is in transmission connection with a rotating shaft of the rotating table through a speed reducer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109663693A (en) * | 2019-02-20 | 2019-04-23 | 江苏汇成光电有限公司 | A kind of spiral light blockage coating structure and its preparation facilities and method |
| CN112064994A (en) * | 2020-09-11 | 2020-12-11 | 杨道芳 | Finishing coating device |
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2019
- 2019-02-20 CN CN201920214825.1U patent/CN210187491U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109663693A (en) * | 2019-02-20 | 2019-04-23 | 江苏汇成光电有限公司 | A kind of spiral light blockage coating structure and its preparation facilities and method |
| CN109663693B (en) * | 2019-02-20 | 2024-04-16 | 江苏汇成光电有限公司 | Spiral photoresist coating structure and preparation device and method thereof |
| CN112064994A (en) * | 2020-09-11 | 2020-12-11 | 杨道芳 | Finishing coating device |
| CN112064994B (en) * | 2020-09-11 | 2021-10-08 | 江苏飞达安全装备科技有限公司 | Finishing coating device |
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