CN109663693B - Spiral photoresist coating structure and preparation device and method thereof - Google Patents
Spiral photoresist coating structure and preparation device and method thereof Download PDFInfo
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- CN109663693B CN109663693B CN201910125864.9A CN201910125864A CN109663693B CN 109663693 B CN109663693 B CN 109663693B CN 201910125864 A CN201910125864 A CN 201910125864A CN 109663693 B CN109663693 B CN 109663693B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 170
- 238000000576 coating method Methods 0.000 title claims abstract description 50
- 239000011248 coating agent Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 20
- 238000005507 spraying Methods 0.000 claims abstract description 64
- 239000002904 solvent Substances 0.000 claims abstract description 44
- 239000003292 glue Substances 0.000 claims abstract description 23
- 230000007246 mechanism Effects 0.000 claims abstract description 22
- 239000007921 spray Substances 0.000 claims abstract description 13
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000010073 coating (rubber) Methods 0.000 claims description 10
- 239000003638 chemical reducing agent Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004026 adhesive bonding Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 8
- 230000006872 improvement Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/04—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
- B05B13/0431—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with spray heads moved by robots or articulated arms, e.g. for applying liquid or other fluent material to 3D-surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/0221—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts
- B05B13/0228—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts the movement of the objects being rotative
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Robotics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention discloses a spiral photoresist coating structure in the field of semiconductor packaging manufacturing and a preparation device and a preparation method thereof, wherein the spiral photoresist coating structure comprises a wafer, a treatment solvent layer and a photoresist layer are covered on the surface of the wafer, and the photoresist layer is spiral; the device comprises a machine body, wherein a circular rotary table is rotatably arranged on the upper side of the machine body, a rotary driving mechanism is arranged in the machine body, and a movable gluing mechanism is arranged above the rotary table; the preparation method comprises the following steps: firstly placing a wafer at the center of a rotary table, sucking the wafer tightly by a vacuum chuck, spraying a processing solvent on the wafer by a glue spraying arm, controlling the rotary table to keep rotating, starting to spray the photoresist when the glue spraying arm moves to the edge of the wafer, and stopping spraying the photoresist when the glue spraying arm moves to the upper part of the center of the wafer. The invention can reduce the light resistance consumption and the light resistance coating time, so that the light resistance is more reasonably distributed on the surface of the wafer, and the cost is reduced.
Description
Technical Field
The invention belongs to the field of semiconductor packaging manufacturing, and particularly relates to a spiral photoresist coating structure, and a preparation device and a preparation method thereof.
Background
In the prior art, photolithography refers to a technique of transferring a pattern on a reticle onto a substrate by means of a photoresist under the action of light. The main process is as follows: firstly, ultraviolet light irradiates the surface of a substrate attached with a layer of photoresist film through a mask plate to cause the photoresist in an exposure area to generate chemical reaction; then the photoresist in the exposed area or the unexposed area is dissolved and removed by a developing technology, so that the pattern on the mask plate is copied to the photoresist film; finally, the pattern is transferred to the substrate by etching technology.
In the field of photolithography in semiconductor packaging manufacturing, there is a conventional photoresist coating process: and the photoresist is sprayed on the center of the chip through the photoresist spraying device, after more photoresist is accumulated in the center of the chip, the chip is rotated to gradually open the photoresist, so that the photoresist positioned in the center of the chip is uniformly covered on the surface of the chip, and the required photoresist thickness is achieved. The defects are that: the cost of the photoresist is high, the photoresist consumption of the process is large, and the cost is high; the photoresist at the photoresist spraying opening part of the photoresist spraying device is exposed in the air to easily form a hard photoresist block, and the photoresist thickness of a local area is uneven during coating; air is slightly dissolved in the photoresist, and after the photoresist at the glue spraying opening is slightly dissolved in the air, the photoresist is heated and exploded in the coating process, so that the partial area is easy to lack glue.
Disclosure of Invention
One of the purposes of the present invention is to provide a spiral photoresist coating structure, which can reduce the photoresist consumption, so that the photoresist is more reasonably distributed on the surface of the wafer, and the qualification rate of the wafer photoresist coating is improved.
The purpose of the invention is realized in the following way: the utility model provides a spiral photoresist coating structure, includes the wafer, the wafer surface cover is provided with the treatment solvent layer, treatment solvent layer top is provided with the photoresist layer, the photoresist layer is spiral, and spiral photoresist layer includes a plurality of end to end's unit section, and adjacent outer unit section tail end links to each other with inlayer unit section head end, and the interval between two adjacent unit sections in the outside is greater than the interval between two adjacent unit sections of inboard.
Compared with the prior art, the invention has the beneficial effects that: the photoresist viscosity on the surface of the wafer is reduced by treating the solvent, so that the purpose of faster diffusion of the photoresist is achieved; the treatment solvent layer formed on the surface of the wafer plays a role of protecting the film, so that the height difference of the concave-convex circuit on the surface of the wafer can be reduced, and the photoresist can be pushed more conveniently; the non-equidistant spiral photoresist layer on the surface of the wafer is distributed more reasonably, so that the photoresist consumption and the cost can be reduced, the photoresist distribution qualification rate on the surface of the wafer can be ensured, and the subsequent photoetching process can be successfully carried out.
As a further improvement of the invention, the head end and the tail end of each unit section are located on the same diameter of the wafer. Each unit section has a complete circumference.
As a further improvement of the invention, the tail end of the inner unit section is positioned at the center of the wafer, and the diameter of the wafer is 195-205 mm. The technical scheme can ensure that the center of the wafer is covered with the photoresist.
As a further improvement of the present invention, the composition and content of the treatment solvent layer are: the propylene glycol methyl ether accounts for 69-71 wt%; the propylene glycol monomethyl ether acetate accounts for 29-31 wt%. The composition components of the photoresist also contain solvent, the content of the solvent determines the viscosity of the photoresist, and the photoresist is contacted with the photoresist after a film-shaped solvent layer is formed on the surface of the wafer, so that the viscosity of the bottom of the photoresist layer can be reduced, the height difference of concave-convex lines on the surface of the wafer is reduced, and the photoresist is easier to push to the surface of the wafer in a rotating state.
The second object of the present invention is to provide a preparation apparatus for a spiral photoresist coating structure, which can spray a processing solvent and a photoresist on the surface of a wafer in sequence when the wafer rotates.
The purpose of the invention is realized in the following way: the utility model provides a spiral photoresist coating structure's preparation facilities, includes the fuselage, and the fuselage upside rotationally is provided with circular revolving stage, and the inside rotary driving mechanism that is provided with of fuselage, be provided with a plurality of vacuum chuck on the revolving stage, the revolving stage top is provided with and removes the rubber coating mechanism, it includes fixed roof-rack to remove the rubber coating mechanism, is provided with 2 at least guide rails on the fixed roof-rack, and wherein 1 guide rail side axial is provided with the rack, and guide rail downside swing joint has the removal seat, corresponds the revolving stage on the removal seat and is provided with spouts the gluey arm, spouts the spout axis of gluey arm and revolving stage surface perpendicular, corresponds the rack an organic whole on the removal seat and is provided with the motor cabinet, installs motor one on the motor cabinet, and the output shaft of motor one upwards passes the motor cabinet and the transmission is connected with the gear, the gear with the rack meshes mutually.
When the wafer spraying device works, the vacuum chuck fixes the wafer, the rotary table drives the wafer to rotate, the motor drives the gear to rotate along the rack, and the movable seat drives the glue spraying arm to move back and forth radially above the wafer; when the wafer rotates, the photoresist spraying arm moves along the radial direction of the wafer and sprays photoresist on the wafer, so that spiral photoresist can be formed on the surface of the wafer. Compared with the prior art, the invention has the beneficial effects that: the device can spray the processing solvent and the photoresist on the surface of the wafer in sequence when the wafer rotates.
As a further improvement of the invention, the rotary driving mechanism comprises a motor II, the motor II is vertically arranged, and the output end of the motor II is in transmission connection with the rotating shaft of the rotating table through a speed reducer. And the motor II drives the rotating shaft of the rotating platform to rotate after being decelerated by the speed reducer, and the rotating platform realizes rotation.
The third objective of the present invention is to provide a method for preparing a spiral photoresist coating structure, which can rapidly prepare the spiral photoresist coating structure, reduce photoresist coating time, improve photoresist coating efficiency, reduce photoresist consumption, and save time.
The purpose of the invention is realized in the following way: a preparation method of a spiral photoresist coating structure comprises the following steps:
firstly, placing a wafer at the center of a rotary table, sucking the wafer tightly by a vacuum chuck, and moving a glue spraying arm to a position 1-2 cm above the center of the wafer, wherein the cross section area of a spraying outlet of the glue spraying arm is 8-12 mm 2 The glue spraying arm sprays the treatment solvent on the wafer, and the rotary table rotates for 50-60 s at the rotating speed of 190-210 RPM, so that the treatment solvent is uniformly spread on the surface of the wafer to form a treatment solvent layer with the thickness of 10-50 mu m; the rotating table is controlled to keep rotating at the rotating speed of 90-110 RPM, the photoresist spraying arm moves to the position 20-40 mm away from the edge of the wafer to start spraying the photoresist, the photoresist spraying arm firstly moves towards the center of the wafer at the speed of 14-16 mm/S in the initial front 2S, then moves towards the center of the wafer at the speed of 11-14 mm/S in the rear 2S, and finally moves towards the center of the wafer at the speed of 6-9 mm/S until the photoresist spraying arm moves to the position above the center of the wafer to stop spraying the photoresist.
Compared with the prior art, the invention has the beneficial effects that: the method rotates the wafer after spraying the treatment solvent on the surface of the wafer, can carry out micro-cleaning on the surface of the wafer, remove the dirt on the surface and prevent the impurity from affecting the coating of the photoresist; the photoresist spraying arm moves the photoresist spraying arm from the edge of the wafer to the center in a variable speed manner, compared with the traditional method, the path of the photoresist from the center of the wafer to the edge can be reduced, and hard blocks are easy to form in the air, so that if the hard blocks exist at the photoresist spraying nozzle, the hard blocks are sprayed on the edge of the wafer preferentially, and the hard blocks are thrown out of the surface of the wafer in the rotating process, so that the occurrence of abnormality is reduced; because the photoresist has a certain viscosity, the nozzle sprays the photoresist from the edge of the wafer, and when the photoresist is contacted with air, the air is slightly fused into the photoresist at the nozzle of the photoresist, so that bubbles are easy to generate, and the bubbles can be thrown out of the surface of the wafer in the subsequent rotation process. The method can reduce the photoresist coating amount and shorten the photoresist coating time.
As a further improvement of the invention, after the photoresist is sprayed, the rotary table is rotated for 18-22S at 90-110 RPM, then rotated for 26-34S at 700-900 RPM, and finally rotated for 1-2S at 1900-2100 RPM, so that the spiral photoresist layer on the wafer is uniformly spread. The photoresist layer is uniformly spread on the wafer by rotation.
Drawings
FIG. 1 is a schematic diagram of a spiral photoresist coating structure.
Fig. 2 is a schematic structural view of a manufacturing apparatus of a spiral photoresist coating structure.
Fig. 3 is a partial enlarged view of fig. 2.
Fig. 4 is a view in the direction a of fig. 2.
Fig. 5 is a cross-sectional view in BB of fig. 4.
The device comprises a wafer 1, a solvent layer 1a, a photoresist layer 2, a unit section 2a, a machine body 3, a rotary table 4, a vacuum chuck 4a, a rotary shaft 4b, a fixed top frame 5, a guide rail 6, a rack 7, a movable seat 8, a glue spraying arm 9, a motor seat 10, a motor I10, a motor II 11 and a speed reducer 12.
Detailed Description
Example 1
As shown in fig. 1-5, a spiral photoresist coating structure comprises a wafer 1, a treatment solvent layer 1a is covered on the surface of the wafer 1, a photoresist layer 2 is arranged above the treatment solvent layer 1a, the photoresist layer 2 is spiral, the spiral photoresist layer 2 comprises a plurality of unit sections 2a connected end to end, the tail ends of adjacent outer unit sections 2a are connected with the head ends of inner unit sections 2a, and the distance between two adjacent unit sections 2a on the outer side is larger than the distance between two adjacent unit sections 2a on the inner side. The leading and trailing ends of each unit section 2a are located on the same diameter of the wafer 1. The tail end of the inner unit section 2a is positioned at the center of the wafer 1, and the diameter of the wafer 1 is 200mm. The composition and content of the treatment solvent layer 1a were: propylene glycol methyl ether 70 wt%; propylene glycol monomethyl ether acetate was 30 wt%.
The preparation facilities of above-mentioned spiral photoresist coating structure, including fuselage 3, fuselage 3 upside rotationally is provided with circular revolving stage 4, and fuselage 3 is inside to be provided with rotary driving mechanism, is provided with a plurality of vacuum chuck 4a on the revolving stage 4, and revolving stage 4 top is provided with and removes the rubber coating mechanism, it includes fixed roof-rack 5 to remove the rubber coating mechanism, is provided with 2 piece at least guide rails 6 on the fixed roof-rack 5, and wherein 1 guide rail 6 side axial is provided with rack 7, and guide rail 6 downside swing joint has movable seat 8, is provided with spouting gluey arm 9 on the movable seat 8 corresponding revolving stage 4, spouts spouting gluey arm 9 spout axis and revolving stage 4 surface vertically, is provided with motor cabinet 10 on the movable seat 8 corresponding to rack 7 an organic whole, installs motor 10a on the motor cabinet 10, and the output shaft of motor 10a upwards passes motor cabinet 10 and the transmission is connected with the gear, and the gear meshes with rack 7 mutually. The rotary driving mechanism comprises a second motor 11, the second motor 11 is vertically arranged, and the output end of the second motor 11 is in transmission connection with a rotating shaft 4b of the rotating table 4 through a speed reducer 12. The motor II 11 drives the rotating shaft 4b of the rotating table 4 to rotate after being decelerated by the decelerator 12, and the rotating table 4 realizes rotation.
The preparation method of the spiral photoresist coating structure comprises the following steps:
firstly, placing a wafer 1 at the center of a rotary table 4, sucking the wafer 1 by a vacuum chuck 4a, moving a glue spraying arm 9 to a position 1.5cm above the center of the wafer 1, wherein the cross section area of a spraying outlet of the glue spraying arm 9 is 10mm 2 The glue spraying arm 9 sprays the processing solvent on the wafer 1, and simultaneously the rotary table 4 rotates for 55S at the rotating speed of 200RPM, so that the processing solvent is uniformly spread on the surface of the wafer 1 to form a processing solvent layer 1a with the thickness of 30 mu m; the turntable 4 is controlled to keep rotating at a rotating speed of 100RPM, the photoresist spraying arm 9 moves to a position 30mm away from the edge of the wafer 1 to start spraying photoresist, firstly moves towards the center of the wafer 1 at a speed of 15mm/S in the initial front 2S, and then moves towards the center of the wafer 1 at a speed of 12.5mm/S in the rear 2SThe center moves, and finally moves radially towards the center of the wafer 1 at a speed of 7.5mm/S until the photoresist spraying arm 9 moves above the center of the wafer 1 to stop spraying photoresist. After the photoresist is sprayed, the rotary table 4 rotates for 20S at a rotation speed of 100RPM, then rotates for 30S at a rotation speed of 800RPM, and finally rotates for 1.5S at a rotation speed of 2000RPM, so that the spiral photoresist layer 2 on the wafer 1 is uniformly spread.
The photoresist coating amount of this example was measured to be 3.3g and the photoresist coating time was measured to be 210s.
Example 2
As shown in fig. 1-5, a spiral photoresist coating structure comprises a wafer 1, a treatment solvent layer 1a is covered on the surface of the wafer 1, a photoresist layer 2 is arranged above the treatment solvent layer 1a, the photoresist layer 2 is spiral, the spiral photoresist layer 2 comprises a plurality of unit sections 2a connected end to end, the tail ends of adjacent outer unit sections 2a are connected with the head ends of inner unit sections 2a, and the distance between two adjacent unit sections 2a on the outer side is larger than the distance between two adjacent unit sections 2a on the inner side. The leading and trailing ends of each unit section 2a are located on the same diameter of the wafer 1. The tail end of the inner unit section 2a is positioned at the center of the wafer 1, and the diameter of the wafer 1 is 195mm. The composition and content of the treatment solvent layer 1a were: propylene glycol methyl ether 71 wt%; propylene glycol monomethyl ether acetate was 29 wt%.
The preparation facilities of above-mentioned spiral photoresist coating structure, including fuselage 3, fuselage 3 upside rotationally is provided with circular revolving stage 4, and fuselage 3 is inside to be provided with rotary driving mechanism, is provided with a plurality of vacuum chuck 4a on the revolving stage 4, and revolving stage 4 top is provided with and removes the rubber coating mechanism, it includes fixed roof-rack 5 to remove the rubber coating mechanism, is provided with 2 piece at least guide rails 6 on the fixed roof-rack 5, and wherein 1 guide rail 6 side axial is provided with rack 7, and guide rail 6 downside swing joint has movable seat 8, is provided with spouting gluey arm 9 on the movable seat 8 corresponding revolving stage 4, spouts spouting gluey arm 9 spout axis and revolving stage 4 surface vertically, is provided with motor cabinet 10 on the movable seat 8 corresponding to rack 7 an organic whole, installs motor 10a on the motor cabinet 10, and the output shaft of motor 10a upwards passes motor cabinet 10 and the transmission is connected with the gear, and the gear meshes with rack 7 mutually. The rotary driving mechanism comprises a second motor 11, the second motor 11 is vertically arranged, and the output end of the second motor 11 is in transmission connection with a rotating shaft 4b of the rotating table 4 through a speed reducer 12. The motor II 11 drives the rotating shaft 4b of the rotating table 4 to rotate after being decelerated by the decelerator 12, and the rotating table 4 realizes rotation.
The preparation method of the spiral photoresist coating structure comprises the following steps:
firstly, placing a wafer 1 at the center of a rotary table 4, sucking the wafer 1 by a vacuum chuck 4a, moving a glue spraying arm 9 to a position 2cm above the center of the wafer 1, wherein the cross section area of a spraying outlet of the glue spraying arm 9 is 12mm 2 The glue spraying arm 9 sprays the processing solvent on the wafer 1, and simultaneously the rotary table 4 rotates for 50S at the rotating speed of 190RPM, so that the processing solvent is uniformly spread on the surface of the wafer 1 to form a processing solvent layer 1a with the thickness of 10 mu m; the rotary table 4 is controlled to keep rotating at a rotating speed of 110RPM, the photoresist spraying arm 9 moves to a position 20mm away from the edge of the wafer 1 to start spraying photoresist, firstly moves towards the center of the wafer 1 at a speed of 16mm/S in the initial front 2S, then moves towards the center of the wafer 1 at a speed of 14mm/S in the later 2S, and finally moves towards the center of the wafer 1 at a speed of 9mm/S until the photoresist spraying arm 9 moves above the center of the wafer 1 to stop spraying photoresist. After the photoresist is sprayed, the rotary table 4 rotates at a rotation speed of 90RPM for 22S, then rotates at a rotation speed of 700RPM for 34S, and finally rotates at a rotation speed of 1900RPM for 2S, so that the spiral photoresist layer 2 on the wafer 1 is uniformly spread.
The photoresist coating amount of this example was measured to be 3.4g and the photoresist coating time was measured to be 212s.
Example 3
As shown in fig. 1-5, a spiral photoresist coating structure comprises a wafer 1, a treatment solvent layer 1a is covered on the surface of the wafer 1, a photoresist layer 2 is arranged above the treatment solvent layer 1a, the photoresist layer 2 is spiral, the spiral photoresist layer 2 comprises a plurality of unit sections 2a connected end to end, the tail ends of adjacent outer unit sections 2a are connected with the head ends of inner unit sections 2a, and the distance between two adjacent unit sections 2a on the outer side is larger than the distance between two adjacent unit sections 2a on the inner side. The leading and trailing ends of each unit section 2a are located on the same diameter of the wafer 1. The tail end of the inner unit section 2a is positioned at the center of the wafer 1, and the diameter of the wafer 1 is 205mm. The composition and content of the treatment solvent layer 1a were: propylene glycol methyl ether 69 wt%; propylene glycol monomethyl ether acetate was 31 wt%.
The preparation facilities of above-mentioned spiral photoresist coating structure, including fuselage 3, fuselage 3 upside rotationally is provided with circular revolving stage 4, and fuselage 3 is inside to be provided with rotary driving mechanism, is provided with a plurality of vacuum chuck 4a on the revolving stage 4, and revolving stage 4 top is provided with and removes the rubber coating mechanism, it includes fixed roof-rack 5 to remove the rubber coating mechanism, is provided with 2 piece at least guide rails 6 on the fixed roof-rack 5, and wherein 1 guide rail 6 side axial is provided with rack 7, and guide rail 6 downside swing joint has movable seat 8, is provided with spouting gluey arm 9 on the movable seat 8 corresponding revolving stage 4, spouts spouting gluey arm 9 spout axis and revolving stage 4 surface vertically, is provided with motor cabinet 10 on the movable seat 8 corresponding to rack 7 an organic whole, installs motor 10a on the motor cabinet 10, and the output shaft of motor 10a upwards passes motor cabinet 10 and the transmission is connected with the gear, and the gear meshes with rack 7 mutually. The rotary driving mechanism comprises a second motor 11, the second motor 11 is vertically arranged, and the output end of the second motor 11 is in transmission connection with a rotating shaft 4b of the rotating table 4 through a speed reducer 12. The motor II 11 drives the rotating shaft 4b of the rotating table 4 to rotate after being decelerated by the decelerator 12, and the rotating table 4 realizes rotation.
The preparation method of the spiral photoresist coating structure comprises the following steps:
firstly, placing a wafer 1 at the center of a rotary table 4, sucking the wafer 1 by a vacuum chuck 4a, moving a glue spraying arm 9 to a position 1cm above the center of the wafer 1, wherein the cross section area of a spraying outlet of the glue spraying arm 9 is 8mm 2 The glue spraying arm 9 sprays the processing solvent on the wafer 1, and simultaneously the rotary table 4 rotates for 60S at the rotating speed of 210RPM, so that the processing solvent is uniformly spread on the surface of the wafer 1 to form a processing solvent layer 1a with the thickness of 50 mu m; the rotary table 4 is controlled to keep rotating at the rotating speed of 90RPM, the photoresist spraying arm 9 moves to a position 40mm away from the edge of the wafer 1 to start spraying photoresist, the photoresist spraying arm firstly moves towards the center of the wafer 1 at the speed of 14mm/S in the initial front 2S, then moves towards the center of the wafer 1 at the speed of 11mm/S in the later 2S, and finally moves towards the center of the wafer 1 at the speed of 6mm/S until the photoresist spraying arm 9 moves above the center of the wafer 1 to stop spraying photoresist. After spraying the photoresist, rotating the table4, firstly, rotating for 18S at 110RPM, then rotating for 26S at 900RPM, and finally rotating for 1S at 2100RPM, so that the spiral photoresist layer 2 on the wafer 1 is uniformly spread.
The photoresist coating amount of this example was measured to be 3.2g and the photoresist coating time was measured to be 208s.
According to the above 3 embodiments, the following table can be derived.
Comparative example: by adopting a traditional method, photoresist is sprayed on the center of the wafer 1 through a photoresist spraying device, after more photoresist is accumulated in the center of the wafer 1, the wafer 1 is rotated, the photoresist is gradually and evenly opened, the photoresist at the center of the wafer 1 is uniformly covered on the surface of the wafer 1, the used photoresist coating amount is 6g, and the photoresist coating process time is 270S.
By comparison, it can be derived that: the preparation method of the invention can greatly reduce the coating dosage of the photoresist, shorten the coating time of the photoresist, reduce the cost and improve the production efficiency.
The photoresist coating structure reduces the photoresist viscosity on the surface of the wafer 1 through the treatment solvent so as to achieve the purpose of faster diffusion of the photoresist; the treatment solvent layer 1a formed on the surface of the wafer 1 plays a role of protecting a film, so that the height difference of concave-convex circuits on the surface of the wafer 1 can be reduced, and the photoresist can be pushed more conveniently; the non-equidistant spiral photoresist layer 2 on the surface of the wafer 1 is distributed more reasonably, the photoresist consumption and the cost can be reduced, the photoresist distribution qualification rate of the surface of the wafer 1 can be ensured, and the subsequent photoetching process can be successfully carried out.
The preparation method of the invention rotates the wafer 1 after spraying the treatment solvent on the surface of the wafer 1, can carry out micro-cleaning on the surface of the wafer 1, remove the dirt on the surface and prevent the impurity from affecting the coating of the photoresist; the photoresist spraying arm 9 moves the photoresist from the edge of the wafer 1 to the center in a variable speed manner, compared with the traditional method, the path of the photoresist from the center of the wafer 1 to the edge can be reduced, and hard blocks are easy to form in the air, so that if the hard blocks exist at the photoresist spraying head, the hard blocks are sprayed on the edge of the wafer 1 preferentially, and the hard blocks are thrown out of the surface of the wafer 1 in the rotating process, so that the occurrence of abnormality is reduced; because the photoresist has certain viscosity, the photoresist is sprayed from the edge of the wafer 1 by the spray head, and when the photoresist is contacted with air, air is slightly fused into the photoresist at the spray head of the photoresist, so that bubbles are easy to generate, and the bubbles can be thrown out of the surface of the wafer 1 in the subsequent rotation process. The method can reduce the photoresist coating amount and shorten the photoresist coating time.
The invention is not limited to the above embodiments, and based on the technical solution disclosed in the invention, a person skilled in the art may make some substitutions and modifications to some technical features thereof without creative effort according to the technical content disclosed, and all the substitutions and modifications are within the protection scope of the invention.
Claims (2)
1. The preparation method of spiral photoresist coating structure, including the fuselage, fuselage upside rotationally is provided with circular revolving stage, and the fuselage is inside to be provided with rotary driving mechanism, be provided with a plurality of vacuum chuck on the revolving stage, the revolving stage top is provided with and removes the rubber coating mechanism, it includes fixed roof-rack to remove the rubber coating mechanism, be provided with 2 piece at least guide rails on the fixed roof-rack, wherein 1 guide rail side axial is provided with the rack, guide rail downside swing joint has the removal seat, it is provided with the spouting the gluey arm to correspond the revolving stage on the removal seat, spout axis and the revolving stage surface perpendicular of spouting the gluey arm, correspond the rack on the removal seat and integrally be provided with the motor cabinet, install motor one on the motor cabinet, the output shaft of motor one upwards passes the motor cabinet and the transmission is connected with the gear, the gear with the rack meshes, its characterized in that, the method includes the following steps:
firstly, placing a wafer at the center of a rotary table, sucking the wafer tightly by a vacuum chuck, and moving a glue spraying arm to a position 1-2 cm above the center of the wafer, wherein the cross section area of a spraying outlet of the glue spraying arm is 8-12 mm 2 The glue spraying arm sprays the treatment solvent on the wafer, and the rotary table rotates for 50-60 s at the rotating speed of 190-210 RPM, so that the treatment solvent is uniformly spread on the surface of the wafer to form a treatment solvent layer with the thickness of 10-50 mu m; the rotating table is controlled to keep rotating at the rotating speed of 90-110 RPM, and the glue spraying arm moves to be far away from the waferStarting to spray the photoresist at the position of 20-40 mm on the edge, firstly moving towards the center of the wafer at the speed of 14-16 mm/S in the initial front 2S, then moving towards the center of the wafer at the speed of 11-14 mm/S in the rear 2S, and finally moving towards the center of the wafer at the speed of 6-9 mm/S until the photoresist spraying arm moves to the position above the center of the wafer, and stopping spraying the photoresist; after spraying the photoresist, the rotary table rotates for 18-22S at 90-110 RPM, then rotates for 26-34S at 700-900 RPM, and finally rotates for 1-2S at 1900-210RPM, so that the spiral photoresist layer on the wafer is uniformly spread;
the prepared spiral photoresist coating structure comprises a wafer, wherein a treatment solvent layer is covered on the surface of the wafer, a photoresist layer is arranged above the treatment solvent layer, the photoresist layer is spiral, the spiral photoresist layer comprises a plurality of unit sections connected end to end, the tail ends of adjacent outer unit sections are connected with the head ends of inner unit sections, and the distance between two adjacent unit sections on the outer side is larger than the distance between two adjacent unit sections on the inner side; the head end and the tail end of each unit section are positioned on the same diameter of the wafer; the tail ends of the unit sections on the inner side are positioned at the center of the wafer, and the diameter of the wafer is 195-205 mm; the composition and the content of the treatment solvent layer are as follows: the propylene glycol methyl ether accounts for 69-71 wt%; the propylene glycol monomethyl ether acetate accounts for 29-31 wt%.
2. The method for preparing a spiral photoresist coating structure according to claim 1, wherein the rotary driving mechanism comprises a second motor, the second motor is vertically arranged, and an output end of the second motor is in transmission connection with a rotating shaft of the rotating table through a speed reducer.
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| CN112718309B (en) * | 2020-12-23 | 2022-07-05 | 翰贝摩尔表面技术（江苏）有限公司 | Ceramic particle wet spraying equipment for electronic material surface treatment and spraying method thereof |
| CN113318904A (en) * | 2021-05-28 | 2021-08-31 | 杭州腾励传动科技股份有限公司 | Method and device for quantitatively and efficiently coating antifriction layer on end face of outer star wheel |
| CN113786964A (en) * | 2021-08-17 | 2021-12-14 | 芷江积成电子有限公司 | Round crystal groove coating equipment |
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