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CN109663693A - A kind of spiral light blockage coating structure and its preparation facilities and method - Google Patents

A kind of spiral light blockage coating structure and its preparation facilities and method Download PDF

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Publication number
CN109663693A
CN109663693A CN201910125864.9A CN201910125864A CN109663693A CN 109663693 A CN109663693 A CN 109663693A CN 201910125864 A CN201910125864 A CN 201910125864A CN 109663693 A CN109663693 A CN 109663693A
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China
Prior art keywords
wafer
photoresist
turntable
glue spraying
light blockage
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Granted
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CN201910125864.9A
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Chinese (zh)
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CN109663693B (en
Inventor
刘祥峰
周德榕
许原诚
陈洋
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Jiangsu Union Semiconductor Co Ltd
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Jiangsu Union Semiconductor Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B13/00Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
    • B05B13/02Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
    • B05B13/04Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
    • B05B13/0431Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with spray heads moved by robots or articulated arms, e.g. for applying liquid or other fluent material to 3D-surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B13/00Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
    • B05B13/02Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
    • B05B13/0221Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts
    • B05B13/0228Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts the movement of the objects being rotative
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Robotics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The invention discloses a kind of spiral light blockage coating structure and its preparation facilities and method in semiconductor packages manufacture field, including wafer, crystal column surface covering is provided with processing solvent layer and photoresist layer, and photoresist layer is twist;Device includes fuselage, can be rotatably set circular rotating platform on the upside of fuselage, and fuselage interior is provided with rotary drive mechanism, is provided with mobile rubber-coated mechanism above turntable;Preparation method includes the following steps: that wafer is first placed on turntable center, vacuum chuck sucks wafer, glue spraying arm sprays processing solvent on wafer, turntable is controlled again keeps rotation, glue spraying arm, which is moved at crystal round fringes, to be started to spray photoresist, degree is mobile radially towards crystal circle center, stops spray photoresist until glue spraying arm is moved to above crystal circle center.The present invention can reduce photoresist dosage and reduce the light blockage coating time, so that photoresist more reasonable layout reduces cost in crystal column surface.

Description

A kind of spiral light blockage coating structure and its preparation facilities and method
Technical field
The invention belongs to semiconductor packages manufacture field, in particular to a kind of spiral light blockage coating structure and its preparation Apparatus and method.
Background technique
In the prior art, photoetching technique refers under illumination effect, turns the figure on mask plate by photoresist Move on to the technology on substrate.It mainly comprises the processes of ultraviolet light first and is irradiated to by mask plate with a layer photoresist film Substrate surface causes the photoresist of exposure area to chemically react;Again by developing technique dissolution removal exposure area or not The photoresist of exposure area is copied to the figure on mask plate on photoresist film;Finally utilize lithographic technique by figure It is transferred on substrate.
In semiconductor packages manufacturing industry field of lithography, there is a kind of conventional light blockage coating technology mode: passing through glue-spraying device Photoresist is all sprayed on chip center, after chip center gathers more photoresist, then rotary chip is opened photoresist is gradually even, made Photoresist uniform fold positioned at chip center reaches required photoresist thickness in chip surface.Disadvantage is that: photoresist Price is higher, and the photoresist amount which consumes is larger, and cost is excessively high;The glue spraying oral area position photoresist exposure of glue-spraying device is in air Ebonite block is easily formed, the photoresist that when coating will lead to regional area is in uneven thickness;Air is slightly soluble in photoresist, glue spraying oral area position light After resistance is slightly soluble in air, it is heated and pops in coating, easily lead to regional area starved.
Summary of the invention
An object of the present invention is to provide a kind of spiral light blockage coating structure, can reduce photoresist dosage, so that light More reasonable layout is hindered in crystal column surface, improves the qualification rate of wafer light blockage coating.
The object of the present invention is achieved like this: a kind of spiral light blockage coating structure, including wafer, the crystal column surface Covering is provided with processing solvent layer, and the processing solvent layer top is provided with photoresist layer, the photoresist layer twist, spiral shape Photoresist layer includes several end to end elementary sections, and adjacent outer layer elementary section tail end is connected with internal layer elementary section head end, outside Two neighboring elementary section between spacing be greater than inside two neighboring elementary section between spacing.
Compared with prior art, the beneficial effects of the present invention are: the photoresist for reducing crystal column surface by processing solvent is viscous Degree, to achieve the purpose that photoresist can more fast diffusion;The processing solvent layer that crystal column surface is formed plays the role of protective film, can be with Reduce the difference in height of crystal column surface bumps route, the passage for photoresist of being more convenient for;The non-equidistant formula spiral shape photoresist of crystal column surface Layer distribution is more reasonable, can reduce photoresist dosage, reduce cost, while can guarantee that the photoresist distribution of crystal column surface is qualified Rate successfully carries out subsequent photoetching process.
As a further improvement of the present invention, the head end of each elementary section and tail end are located at the same diameter of wafer On.Each elementary section is in a complete circumference.
As a further improvement of the present invention, the elementary section tail end of inside is located at the center of wafer, and wafer is straight Diameter is 195 ~ 205mm.The technical program can guarantee that crystal circle center is covered with photoresist.
As a further improvement of the present invention, the composition and content of the processing solvent of the processing solvent layer are as follows: propylene glycol Methyl ether is 69 ~ 71 wt %;Propylene glycol monomethyl ether acetic acid rouge is 29 ~ 31 wt %.Also contain solvent in the constituent of photoresist, it is molten How much the content of agent determines to contact after the viscosity of photoresist, crystal column surface form film-form processing solvent layer with photoresist, can reduce light Resistance layer bottom viscosity reduces the difference in height of crystal column surface bumps route, and photoresist is easier to push away toward crystal column surface under rotary state It moves.
The second object of the present invention is to provide a kind of preparation facilities of spiral light blockage coating structure, can be rotated in wafer When, processing solvent and photoresist are successively sprayed to crystal column surface.
The object of the present invention is achieved like this: a kind of preparation facilities of spiral light blockage coating structure, including fuselage, machine Side can be rotatably set circular rotating platform with it, and fuselage interior is provided with rotary drive mechanism, is provided on the turntable Several vacuum chucks, the turntable top are provided with mobile rubber-coated mechanism, and the mobile rubber-coated mechanism includes fixed upper frame, Gu Determine to be provided at least 2 guide rails on upper frame, wherein 1 guide rail side axial is provided with rack gear, is connected with shifting on the downside of guide rail Seat is moved, turntable is corresponded on Mobile base and is provided with glue spraying arm, the ejiction opening axis of glue spraying arm is vertical with turntable surface, moves Rack gear is corresponded on dynamic seat and has been wholely set motor cabinet, motor one is installed, the output shaft of motor one is upward through electricity on motor cabinet Base is simultaneously sequentially connected with gear, and gear is meshed with the rack gear.
When the invention works, vacuum chuck fixes wafer, turntable drive wafer rotation, motor one with moving gear along Racks turn, Mobile base, which is realized, drives glue spraying arm to move radially back and forth above wafer;In wafer rotation, glue spraying arm edge Wafer moves radially and sprays photoresist to wafer, can form helical form photoresist in crystal column surface.Compared with prior art, of the invention Beneficial effect be: the present apparatus can successively spray processing solvent and photoresist to crystal column surface when wafer is rotated.
As a further improvement of the present invention, the rotary drive mechanism includes motor two, and motor two is vertically arranged, motor Two output end is connected through the rotating shaft transmission of retarder and turntable.Motor two drives the shaft of turntable after retarder slows down Rotation, turntable realize rotation.
The third object of the present invention is to provide a kind of preparation method of spiral light blockage coating structure, can quickly prepare Above-mentioned spiral light blockage coating structure reduces the light blockage coating time, improves light blockage coating efficiency, and reduce photoresist dosage, saves Time.
The object of the present invention is achieved like this: a kind of preparation method of spiral light blockage coating structure, including walks as follows It is rapid:
Wafer is first placed on turntable center, vacuum chuck sucks wafer, and glue spraying arm moves again to crystal circle center At 1 ~ 2cm of top, the ejiction opening cross-sectional area of glue spraying arm is 8 ~ 12mm2, glue spraying arm sprays processing solvent on wafer, together When turntable with 50 ~ 60S of rotational speed of 190 ~ 210RPM so that processing solvent uniformly spreads out to form 10 ~ 50 μ in crystal column surface The processing solvent layer of m thickness;It controls turntable and rotation is kept with the revolving speed of 90 ~ 110RPM, glue spraying arm is moved to apart from wafer side Start to spray photoresist at 20 ~ 40mm of edge, it is first mobile towards crystal circle center with the velocity radial of 14 ~ 16mm/S in initial preceding 2S, so It is mobile towards crystal circle center with the velocity radial of 11 ~ 14mm/S in rear 2S afterwards, finally with the velocity radial of 6 ~ 9mm/S towards in wafer The heart is mobile, stops spray photoresist until glue spraying arm is moved to above crystal circle center.
Compared with prior art, the beneficial effects of the present invention are: this method turns after crystal column surface sprays processing solvent Dynamic wafer, a micro- cleaning can be done to crystal column surface, removes the dirty of surface, prevents the coating of impurity effect photoresist;Glue spraying hand For arm with speed changing type from crystal round fringes toward the mobile spray photoresist in center, photoresist can be reduced from crystal circle center toward edge by being compared with the traditional method The distance of passage, photoresist in air easily formed lump, if thus have lump at photoresist spray head, can preferentially be sprayed on crystal round fringes, Lump can be thrown out of crystal column surface during rotation, reduce exception;Because photoresist has certain viscosity, spray head is first from wafer Edge sprays photoresist, and when photoresist is first contacted with air, photoresist is also easy to produce bubble at the micro- involvement photoresist spray head of air, in subsequent rotation Bubble can be thrown out of crystal column surface in the process.This method can reduce light blockage coating dosage, and shorten the light blockage coating time.
As a further improvement of the present invention, after having sprayed photoresist, the first rotational speed 18 with 90 ~ 110RPM of turntable ~ 22S, then with 26 ~ 34S of rotational speed of 700 ~ 900RPM, finally with 1 ~ 2S of rotational speed of 1900 ~ 2100RPM, so that wafer On spiral shape photoresist layer uniformly spread out.By rotation, photoresist layer is uniformly spread out on wafer.
Detailed description of the invention
Fig. 1 is the schematic diagram of spiral light blockage coating structure.
Fig. 2 is the structural schematic diagram of the preparation facilities of spiral light blockage coating structure.
Fig. 3 is the partial enlarged view of Fig. 2.
Fig. 4 is the A direction view of Fig. 2.
Fig. 5 is the BB of Fig. 4 to cross-sectional view.
Wherein, 1 wafer, 1a handle solvent layer, 2 photoresist layers, 2a elementary section, 3 fuselages, 4 turntables, 4a vacuum chuck, 4b Shaft, 5 fixed upper frames, 6 guide rails, 7 rack gears, 8 Mobile bases, 9 glue spraying arms, 10 motor cabinets, 10a motor one, 11 motors two, 12 subtract Fast device.
Specific embodiment
Embodiment 1
It as shown in Figs. 1-5, is a kind of spiral light blockage coating structure, including wafer 1, it is molten that the covering of 1 surface of wafer is provided with processing Photoresist layer 2 is provided with above oxidant layer 1a, processing solvent layer 1a, twist, spiral shape photoresist layer 2 includes several head to photoresist layer 2 The connected elementary section 2a of tail, adjacent outer layer elementary section 2a tail end are connected with internal layer elementary section 2a head end, outside it is two neighboring Spacing between elementary section 2a is greater than the spacing between the two neighboring elementary section 2a of inside.The head end and tail of each elementary section 2a End be located at wafer 1 it is same diametrically.The elementary section 2a tail end of inside is located at the center of wafer 1, and 1 diameter of wafer is 200mm.Handle the composition and content of the processing solvent of solvent layer 1a are as follows: propylene glycol monomethyl ether is 70 wt %;Propylene glycol monomethyl ether second Sour rouge is 30wt %.
A kind of preparation facilities of above-mentioned spiral light blockage coating structure, including fuselage 3 can be rotatably set on the upside of fuselage 3 There is circular rotating platform 4, fuselage 3 is internally provided with rotary drive mechanism, and several vacuum chuck 4a are provided on turntable 4, rotates Mobile rubber-coated mechanism is provided with above platform 4, the mobile rubber-coated mechanism includes fixed upper frame 5, is provided at least on fixed upper frame 5 2 guide rails 6 are connected with Mobile base 8 wherein 16 side axial of guide rail is provided with rack gear 7 on the downside of guide rail 6, on Mobile base 8 Corresponding turntable 4 is provided with glue spraying arm 9, and the ejiction opening axis of glue spraying arm 9 is vertical with 4 surface of turntable, right on Mobile base 8 It answers rack gear 7 to be wholely set motor cabinet 10, one 10a of motor is installed on motor cabinet 10, the output shaft of one 10a of motor is upward through Motor cabinet 10 is simultaneously sequentially connected with gear, and wheel and rack 7 is meshed.The rotary drive mechanism includes motor 2 11, motor 2 11 are vertically arranged, and the output end of motor 2 11 is sequentially connected through the shaft 4b of retarder 12 and turntable 4.Motor 2 11 is through subtracting Fast device 12 drives the shaft 4b rotation of turntable 4 after slowing down, turntable 4 realizes rotation.
A kind of preparation method of above-mentioned spiral light blockage coating structure, includes the following steps:
Wafer 1 is first placed on 4 center of turntable, vacuum chuck 4a sucks wafer 1, and glue spraying arm 9 moves again to crystalline substance At 1 overcentre 1.5cm of circle, the ejiction opening cross-sectional area of glue spraying arm 9 is 10mm2, glue spraying arm 9 sprays place on wafer 1 Solvent is managed, while turntable 4 uniformly spreads out to form 30 so that handling solvent with the rotational speed 55S of 200RPM on 1 surface of wafer The processing solvent layer 1a of μ m-thick;It controls turntable 4 and rotation is kept with the revolving speed of 100RPM, glue spraying arm 9 is moved to apart from wafer 1 Start to spray photoresist at edge 30mm, it is first mobile towards 1 center of wafer with the velocity radial of 15mm/S in initial preceding 2S, then exist It is mobile towards 1 center of wafer with the velocity radial of 12.5mm/S in 2S afterwards, finally with the velocity radial of 7.5mm/S towards 1 center of wafer It is mobile, stop spray photoresist until glue spraying arm 9 is moved to 1 overcentre of wafer.After having sprayed photoresist, turntable 4 is first with 100RPM Rotational speed 20S, then with the rotational speed 30S of 800RPM, finally with the rotational speed 1.5S of 2000RPM, so that on wafer 1 Spiral shape photoresist layer 2 uniformly spread out.
By measurement, the light blockage coating dosage of the present embodiment is 3.3g, and the light blockage coating time is 210s.
Embodiment 2
It as shown in Figs. 1-5, is a kind of spiral light blockage coating structure, including wafer 1, it is molten that the covering of 1 surface of wafer is provided with processing Photoresist layer 2 is provided with above oxidant layer 1a, processing solvent layer 1a, twist, spiral shape photoresist layer 2 includes several head to photoresist layer 2 The connected elementary section 2a of tail, adjacent outer layer elementary section 2a tail end are connected with internal layer elementary section 2a head end, outside it is two neighboring Spacing between elementary section 2a is greater than the spacing between the two neighboring elementary section 2a of inside.The head end and tail of each elementary section 2a End be located at wafer 1 it is same diametrically.The elementary section 2a tail end of inside is located at the center of wafer 1, and 1 diameter of wafer is 195mm.Handle the composition and content of the processing solvent of solvent layer 1a are as follows: propylene glycol monomethyl ether is 71 wt %;Propylene glycol monomethyl ether second Sour rouge is 29wt %.
A kind of preparation facilities of above-mentioned spiral light blockage coating structure, including fuselage 3 can be rotatably set on the upside of fuselage 3 There is circular rotating platform 4, fuselage 3 is internally provided with rotary drive mechanism, and several vacuum chuck 4a are provided on turntable 4, rotates Mobile rubber-coated mechanism is provided with above platform 4, the mobile rubber-coated mechanism includes fixed upper frame 5, is provided at least on fixed upper frame 5 2 guide rails 6 are connected with Mobile base 8 wherein 16 side axial of guide rail is provided with rack gear 7 on the downside of guide rail 6, on Mobile base 8 Corresponding turntable 4 is provided with glue spraying arm 9, and the ejiction opening axis of glue spraying arm 9 is vertical with 4 surface of turntable, right on Mobile base 8 It answers rack gear 7 to be wholely set motor cabinet 10, one 10a of motor is installed on motor cabinet 10, the output shaft of one 10a of motor is upward through Motor cabinet 10 is simultaneously sequentially connected with gear, and wheel and rack 7 is meshed.The rotary drive mechanism includes motor 2 11, motor 2 11 are vertically arranged, and the output end of motor 2 11 is sequentially connected through the shaft 4b of retarder 12 and turntable 4.Motor 2 11 is through subtracting Fast device 12 drives the shaft 4b rotation of turntable 4 after slowing down, turntable 4 realizes rotation.
A kind of preparation method of above-mentioned spiral light blockage coating structure, includes the following steps:
Wafer 1 is first placed on 4 center of turntable, vacuum chuck 4a sucks wafer 1, and glue spraying arm 9 moves again to crystalline substance At 1 overcentre 2cm of circle, the ejiction opening cross-sectional area of glue spraying arm 9 is 12mm2, glue spraying arm 9 sprays processing on wafer 1 Solvent, while turntable 4 uniformly spreads out to form 10 μm so that handling solvent with the rotational speed 50S of 190RPM on 1 surface of wafer Thick processing solvent layer 1a;It controls turntable 4 and rotation is kept with the revolving speed of 110RPM, glue spraying arm 9 is moved to apart from 1 side of wafer Start to spray photoresist at edge 20mm, it is first mobile towards 1 center of wafer with the velocity radial of 16mm/S in initial preceding 2S, then rear It is mobile towards 1 center of wafer with the velocity radial of 14mm/S in 2S, it is finally mobile towards 1 center of wafer with the velocity radial of 9mm/S, directly 1 overcentre of wafer, which is moved to, to glue spraying arm 9 stops spray photoresist.After having sprayed photoresist, turntable 4 is first turned with the revolving speed of 90RPM Dynamic 22S, then with the rotational speed 34S of 700RPM, finally with the rotational speed 2S of 1900RPM, so that the spiral shape light on wafer 1 Resistance layer 2 is uniformly spread out.
By measurement, the light blockage coating dosage of the present embodiment is 3.4g, and the light blockage coating time is 212s.
Embodiment 3
It as shown in Figs. 1-5, is a kind of spiral light blockage coating structure, including wafer 1, it is molten that the covering of 1 surface of wafer is provided with processing Photoresist layer 2 is provided with above oxidant layer 1a, processing solvent layer 1a, twist, spiral shape photoresist layer 2 includes several head to photoresist layer 2 The connected elementary section 2a of tail, adjacent outer layer elementary section 2a tail end are connected with internal layer elementary section 2a head end, outside it is two neighboring Spacing between elementary section 2a is greater than the spacing between the two neighboring elementary section 2a of inside.The head end and tail of each elementary section 2a End be located at wafer 1 it is same diametrically.The elementary section 2a tail end of inside is located at the center of wafer 1, and 1 diameter of wafer is 205mm.Handle the composition and content of the processing solvent of solvent layer 1a are as follows: propylene glycol monomethyl ether is 69wt %;Propylene glycol monomethyl ether second Sour rouge is 31wt %.
A kind of preparation facilities of above-mentioned spiral light blockage coating structure, including fuselage 3 can be rotatably set on the upside of fuselage 3 There is circular rotating platform 4, fuselage 3 is internally provided with rotary drive mechanism, and several vacuum chuck 4a are provided on turntable 4, rotates Mobile rubber-coated mechanism is provided with above platform 4, the mobile rubber-coated mechanism includes fixed upper frame 5, is provided at least on fixed upper frame 5 2 guide rails 6 are connected with Mobile base 8 wherein 16 side axial of guide rail is provided with rack gear 7 on the downside of guide rail 6, on Mobile base 8 Corresponding turntable 4 is provided with glue spraying arm 9, and the ejiction opening axis of glue spraying arm 9 is vertical with 4 surface of turntable, right on Mobile base 8 It answers rack gear 7 to be wholely set motor cabinet 10, one 10a of motor is installed on motor cabinet 10, the output shaft of one 10a of motor is upward through Motor cabinet 10 is simultaneously sequentially connected with gear, and wheel and rack 7 is meshed.The rotary drive mechanism includes motor 2 11, motor 2 11 are vertically arranged, and the output end of motor 2 11 is sequentially connected through the shaft 4b of retarder 12 and turntable 4.Motor 2 11 is through subtracting Fast device 12 drives the shaft 4b rotation of turntable 4 after slowing down, turntable 4 realizes rotation.
A kind of preparation method of above-mentioned spiral light blockage coating structure, includes the following steps:
Wafer 1 is first placed on 4 center of turntable, vacuum chuck 4a sucks wafer 1, and glue spraying arm 9 moves again to crystalline substance At 1 overcentre 1cm of circle, the ejiction opening cross-sectional area of glue spraying arm 9 is 8mm2, it is molten that glue spraying arm 9 sprays processing on wafer 1 Agent, while turntable 4 uniformly spreads out to form 50 μ m-thicks so that handling solvent with the rotational speed 60S of 210RPM on 1 surface of wafer Processing solvent layer 1a;It controls turntable 4 and rotation is kept with the revolving speed of 90RPM, glue spraying arm 9 is moved to apart from 1 edge of wafer Start to spray photoresist at 40mm, it is first mobile towards 1 center of wafer with the velocity radial of 14mm/S in initial preceding 2S, then in rear 2S The interior velocity radial with 11mm/S is mobile towards 1 center of wafer, finally mobile towards 1 center of wafer with the velocity radial of 6mm/S, until Glue spraying arm 9 is moved to 1 overcentre of wafer and stops spray photoresist.After having sprayed photoresist, turntable 4 is first with the rotational speed of 110RPM 18S, then with the rotational speed 26S of 900RPM, finally with the rotational speed 1S of 2100RPM, so that the spiral shape photoresist on wafer 1 Layer 2 is uniformly spread out.
By measurement, the light blockage coating dosage of the present embodiment is 3.2g, and the light blockage coating time is 208s.
According to above-mentioned 3 embodiments, it can be deduced that following table.
Comparative example: using conventional method, and photoresist is all sprayed on to 1 center of wafer, the accumulation of 1 center of wafer by glue-spraying device After more photoresist, then rotating wafer 1 opens photoresist is gradually even, makes the photoresist uniform fold positioned at 1 center of wafer in wafer 1 Surface, light blockage coating dosage used are 6g, and light blockage coating processing time is 270S.
By comparing it follows that preparation method of the invention can greatly reduce light blockage coating dosage, and shorten photoresist Coating duration reduces cost, improves production efficiency.
Light blockage coating structure of the invention reduces the photoresist viscosity on 1 surface of wafer by processing solvent, to reach photoresist energy The purpose of more fast diffusion;The processing solvent layer 1a that 1 surface of wafer is formed plays the role of protective film, can reduce by 1 table of wafer The difference in height of face bumps route, the passage for photoresist of being more convenient for;The non-equidistant distribution of formula spiral shape photoresist layer 2 on 1 surface of wafer is more Adduction reason, photoresist dosage can be reduced, reduce cost, at the same can guarantee 1 surface of wafer photoresist distribution qualification rate, success into The subsequent photoetching process of row.
Preparation method of the invention rotates wafer 1 after processing solvent is sprayed on 1 surface of wafer, can do one to 1 surface of wafer A micro- cleaning, removes the dirty of surface, prevents the coating of impurity effect photoresist;Glue spraying arm 9 is past from 1 edge of wafer with speed changing type The mobile spray photoresist in center, the distance that photoresist is elapsed from 1 center of wafer toward edge can be reduced by being compared with the traditional method, and photoresist is in air In easily form lump, if thus have lump at photoresist spray head, can preferentially be sprayed on 1 edge of wafer, lump can quilt during rotation 1 surface of wafer is thrown away, exception is reduced;Because photoresist has certain viscosity, spray head first sprays photoresist from 1 edge of wafer, and photoresist is first When contacting with air, photoresist is also easy to produce bubble at the micro- involvement photoresist spray head of air, bubble can be thrown out of during subsequent rotation 1 surface of wafer.This method can reduce light blockage coating dosage, and shorten the light blockage coating time.
The present invention is not limited to the above embodiments, on the basis of technical solution disclosed by the invention, the skill of this field For art personnel according to disclosed technology contents, one can be made to some of which technical characteristic by not needing creative labor A little replacements and deformation, these replacements and deformation are within the scope of the invention.

Claims (8)

1. a kind of spiral light blockage coating structure, including wafer, which is characterized in that it is molten that the crystal column surface covering is provided with processing Oxidant layer, the processing solvent layer top are provided with photoresist layer, and twist, spiral shape photoresist layer includes several to the photoresist layer End to end elementary section, adjacent outer layer elementary section tail end are connected with internal layer elementary section head end, the two neighboring unit in outside Spacing between section is greater than the spacing between the two neighboring elementary section of inside.
2. a kind of spiral light blockage coating structure according to claim 1, which is characterized in that the head of each elementary section End with tail end be located at wafer it is same diametrically.
3. a kind of spiral light blockage coating structure according to claim 1 or 2, which is characterized in that the unit of inside Section tail end is located at the center of wafer, and diameter wafer is 195 ~ 205mm.
4. a kind of spiral light blockage coating structure according to claim 1 or 2, which is characterized in that the processing solvent layer Processing solvent composition and content are as follows: propylene glycol monomethyl ether be 69 ~ 71 wt %;Propylene glycol monomethyl ether acetic acid rouge is 29 ~ 31 wt %。
5. a kind of preparation facilities of spiral light blockage coating structure according to claim 1-4, which is characterized in that Including fuselage, circular rotating platform can be rotatably set on the upside of fuselage, fuselage interior is provided with rotary drive mechanism, the rotation It is provided with several vacuum chucks on platform, is provided with mobile rubber-coated mechanism above the turntable, the mobile rubber-coated mechanism includes Fixed upper frame is fixed on upper frame and is provided at least 2 guide rails, wherein 1 guide rail side axial is provided with rack gear, lives on the downside of guide rail It is dynamic to be connected with Mobile base, turntable is corresponded on Mobile base is provided with glue spraying arm, the ejiction opening axis and turntable of glue spraying arm Surface is vertical, and rack gear is corresponded on Mobile base and has been wholely set motor cabinet, motor one, the output shaft of motor one are equipped on motor cabinet It is upward through motor cabinet and is sequentially connected with gear, gear is meshed with the rack gear.
6. a kind of preparation facilities of spiral light blockage coating structure according to claim 5, which is characterized in that the rotation Driving mechanism includes motor two, and motor two is vertically arranged, and the output end of motor two connects through the rotating shaft transmission of retarder and turntable It connects.
7. a kind of preparation method of spiral light blockage coating structure according to claim 1-4, it is characterised in that Include the following steps:
Wafer is first placed on turntable center, vacuum chuck sucks wafer, and glue spraying arm moves again to crystal circle center At 1 ~ 2cm of top, the ejiction opening cross-sectional area of glue spraying arm is 8 ~ 12mm2, glue spraying arm sprays processing solvent on wafer, Turntable is simultaneously with 50 ~ 60S of rotational speed of 190 ~ 210RPM so that processing solvent uniformly spread out in crystal column surface to form 10 ~ The processing solvent layer of 50 μ m-thicks;It controls turntable and rotation is kept with the revolving speed of 90 ~ 110RPM, glue spraying arm is moved to apart from wafer Start to spray photoresist at 20 ~ 40mm of edge, it is first mobile towards crystal circle center with the velocity radial of 14 ~ 16mm/S in initial preceding 2S, Then mobile towards crystal circle center with the velocity radial of 11 ~ 14mm/S in rear 2S, finally with the velocity radial of 6 ~ 9mm/S towards wafer Center is mobile, stops spray photoresist until glue spraying arm is moved to above crystal circle center.
8. a kind of preparation method of spiral light blockage coating structure according to claim 7, which is characterized in that sprayed photoresist Afterwards, turntable is first with 18 ~ 22S of rotational speed of 90 ~ 110RPM, then with 26 ~ 34S of rotational speed of 700 ~ 900RPM, finally with 1 ~ 2S of rotational speed of 1900 ~ 2100RPM, so that the spiral shape photoresist layer on wafer is uniformly spread out.
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CN113318904A (en) * 2021-05-28 2021-08-31 杭州腾励传动科技股份有限公司 Method and device for quantitatively and efficiently coating antifriction layer on end face of outer star wheel
CN113786964A (en) * 2021-08-17 2021-12-14 芷江积成电子有限公司 Round crystal groove coating equipment
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CN115685685A (en) * 2022-10-14 2023-02-03 华虹半导体(无锡)有限公司 Coating method of photoresist

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