CN208429863U - MEMS device - Google Patents
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- CN208429863U CN208429863U CN201820574999.4U CN201820574999U CN208429863U CN 208429863 U CN208429863 U CN 208429863U CN 201820574999 U CN201820574999 U CN 201820574999U CN 208429863 U CN208429863 U CN 208429863U
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Abstract
Disclose a kind of MEMS device, wherein include: substrate, substrate has the first cavity；First sacrificial layer is located on substrate；First vibrating diaphragm layer is located on the first sacrificial layer, and at least part of the first vibrating diaphragm layer is supported by the first sacrificial layer；Second sacrificial layer is located in the first vibrating diaphragm layer；Back pole plate layer is located on the second sacrificial layer, and at least part of the back pole plate layer is supported by the second sacrificial layer, so that back pole plate layer and first vibrating diaphragm layer form first capacitor device；3rd sacrifice layer is located on back pole plate layer；Second vibrating diaphragm layer is located in 3rd sacrifice layer, and at least part of the second vibrating diaphragm layer is supported by 3rd sacrifice layer, so that the second vibrating diaphragm layer and back pole plate layer form the second capacitor.By the way that back pole plate layer is placed between the first vibrating diaphragm layer and the second vibrating diaphragm layer, it is possible to reduce pollution of the external environment to back pole plate layer, and two variable condenser composition differential type capacitance structures are formed by, to improve the performance of MEMS device.
Description
Technical field
The utility model relates to MEMS device technical fields, more particularly, to the micro- silicon microphone structure of MEMS.
Background technique
The micro- silicon microphone of MEMS is rapidly developed in recent years, and smart phone, laptop, bluetooth headset,
It is used widely in the consumption electronic products such as intelligent sound box.The micro- silicon microphone of MEMS mainly contains a MEMS chip and IC
Voice signal is converted into electric signal by MEMS chip by chip.Capacitance-type micro silicon microphone is by rigid perforated back pole plate and bullet
Property vibrating diaphragm constitute variable capacitance, when external sound pressure acts on vibrating diaphragm the vibration of membrane that causes to shake, so that its capacitor be made to change,
And then change the potential between vibrating diaphragm and backboard, realize the conversion of sound pressure signal and electric signal.
Currently, capacitive-type silicon microphone mostly uses greatly a vibrating diaphragm and a back board structure to constitute a variable capacitance,
Its sensitivity and signal-to-noise ratio are limited.With the fast development of the consumer products such as high-end handsets and intelligent sound box, market there is an urgent need to
Highly sensitive, low noise silicon microphone.United States Patent (USP) (application number is respectively US20110075865A1 and US9503823B2)
A kind of double backboard silicon microphones based on MEMS technology are provided, by the way that elastic vibrating diaphragm is set between two perforation backboards,
To form two variable capacitances, sensitivity and the signal-to-noise ratio of silicon microphone are substantially increased.However, in double backboard microphones
Two backboards all have the acoustic aperture penetrated, and are exposed to the outside of MEMS chip, are highly prone to the extraneous ring such as fine dust, moisture
The pollution in border, for example causes backboard to be connected with vibrating diaphragm and leak electricity, and adherency etc. occurs for vibrating diaphragm and backboard, affects silicon microphone
Reliability.
Utility model content
Problem to be solved in the utility model is to provide a kind of MEMS device, wherein by placing back pole plate layer
Between the first vibrating diaphragm layer and the second vibrating diaphragm layer, it is possible to reduce pollution of the external environment to back pole plate layer, and be formed by
Two variable condensers form differential type capacitance structure, to improve the performance of MEMS device.
One side according to the present utility model provides a kind of MEMS device, comprising: substrate, the substrate have the first sky
Chamber；First sacrificial layer is located on the substrate, has the second cavity in first sacrificial layer；First vibrating diaphragm layer is located at described
On first sacrificial layer, at least part of first vibrating diaphragm layer is supported by first sacrificial layer；Second sacrificial layer is located at institute
It states in the first vibrating diaphragm layer, there is third cavity in second sacrificial layer；Back pole plate layer is located on second sacrificial layer, institute
At least part for stating back pole plate layer is supported by second sacrificial layer, so that the back pole plate layer and the first vibrating diaphragm layer shape
At first capacitor device；3rd sacrifice layer is located on the back pole plate layer, has the 4th cavity in the 3rd sacrifice layer；Second
Vibrating diaphragm layer is located in the 3rd sacrifice layer, and at least part of second vibrating diaphragm layer is supported by the 3rd sacrifice layer, is made
It obtains second vibrating diaphragm layer and the back pole plate layer forms the second capacitor, wherein the MEMS device further includes for limiting
Multiple stop-layers of the lateral dimension of at least one described second to the 4th cavity.
Preferably, first vibrating diaphragm layer includes the first opening, so that second cavity is connected to the third cavity.
Preferably, second vibrating diaphragm layer includes the second opening, so that the 4th cavity is connected to external environment.
Preferably, the back pole plate layer includes third opening, so that the third cavity is connected to the 4th cavity.
Preferably, the multiple stop-layer includes: the first stop-layer, is located at second cavity inner wall, with described first
Stop-layer is hard mask, forms second cavity；Second stop-layer is located at the third cavity inner wall, stops with described second
Only layer is hard mask, forms the third cavity；Third stop-layer is stopped positioned at the inner wall of the 4th cavity with the third
Only layer is hard mask, forms the 4th cavity.
Preferably, first stop-layer and first vibrating diaphragm layer surround second cavity, second stop-layer
It is empty around the described 4th that the third cavity, the third stop-layer and second vibrating diaphragm layer are surrounded with the back pole plate layer
Chamber.
Preferably, first stop-layer, second stop-layer and the third stop-layer are along perpendicular to principal plane
Direction it is aligned with each other.
Preferably, further includes: passivation layer, surface and second vibrating diaphragm layer at least covering the 3rd sacrifice layer are adjacent
A part of surface of the nearly 3rd sacrifice layer.
Preferably, further includes: anti adhering layer, the anti adhering layer are located at first cavity, second cavity, described
The inner wall of at least one third cavity and the 4th cavity.
Preferably, further includes: the first conductive channel passes through the passivation layer, 3rd sacrifice layer, described from top to bottom
Second sacrificial layer reaches first vibrating diaphragm layer；Second conductive channel passes through the passivation layer from top to bottom and the third is sacrificial
Domestic animal layer, reaches the back pole plate layer；And third conductive channel, the passivation layer is passed through from top to bottom, reaches second vibration
Film layer.
Another aspect according to the present utility model provides a kind of manufacturing method of MEMS device, wherein includes: in substrate
On sequentially form the first sacrificial layer, the first vibrating diaphragm layer, the second sacrificial layer, back pole plate layer, 3rd sacrifice layer and the second vibrating diaphragm layer；
The first cavity is formed in the substrate；Via first cavity, the second cavity is formed in first sacrificial layer, it is described
First cavity and second cavity communicate with each other, and at least part of first vibrating diaphragm layer is by the first sacrificial layer branch
Support；Third cavity is formed in second sacrificial layer, at least part of the back pole plate layer is by the second sacrificial layer branch
Support, so that the back pole plate layer and first vibrating diaphragm layer form first capacitor device；And it is formed in the 3rd sacrifice layer
At least part of 4th cavity, second vibrating diaphragm layer is supported by the 3rd sacrifice layer, so that the back pole plate layer and institute
It states the second vibrating diaphragm layer and forms the second capacitor, wherein the manufacturing method further includes that form multiple stop-layers described for limiting
The lateral dimension of at least one second to the 4th cavity.
Preferably, further includes: the first opening is formed in first vibrating diaphragm layer, in the step of forming the third cavity
In, etchant is from second cavity via the second sacrificial layer described in first opening etching.
Preferably, further includes: the second opening is formed in second vibrating diaphragm layer, in the step of forming four cavity
In, etchant is via 3rd sacrifice layer described in second opening etching.
Preferably, further includes: third opening is formed in the back pole plate layer, so that the third cavity and the described 4th
Cavity connection.
Preferably, the step of forming multiple stop-layers includes: to form first sacrificial layer and first vibrating diaphragm layer
The step of between, first stop-layer is formed in first sacrificial layer；Forming second sacrificial layer and the back
Between the step of pole plate layer, second stop-layer is formed in second sacrificial layer；And forming the third sacrifice
Between the step of layer and second vibrating diaphragm layer, the third stop-layer is formed in the 3rd sacrifice layer.
Preferably, first stop-layer and first vibrating diaphragm layer surround second cavity, second stop-layer
It is empty around the described 4th that the third cavity, the third stop-layer and second vibrating diaphragm layer are surrounded with the back pole plate layer
Chamber.
Preferably, first stop-layer, second stop-layer and the third stop-layer are along perpendicular to principal plane
Direction it is aligned with each other.
Preferably, after forming second vibrating diaphragm layer, further includes: form passivation layer, it is sacrificial at least to cover the third
The surface of domestic animal layer and second vibrating diaphragm layer are adjacent to a part of surface of the 3rd sacrifice layer.
Preferably, after the step of forming four cavity, further includes: form anti adhering layer, the anti adhering layer
Positioned at the inner wall of at least one first cavity, second cavity, the third cavity and the 4th cavity.
Preferably, after the step of forming second vibrating diaphragm layer, further includes: formed the first conductive channel, from up to
Under across the passivation layer, the 3rd sacrifice layer, second sacrificial layer, reach first vibrating diaphragm layer；Second is formed to lead
Electric channel sequentially passes through the passivation layer and the 3rd sacrifice layer from top to bottom, reaches the back pole plate layer；And form the
Three conductive channels pass through the passivation layer from top to bottom, reach second vibrating diaphragm layer.
According to the MEMS device of the utility model embodiment, by the way that back pole plate layer is placed on the first vibrating diaphragm layer and second
Between vibrating diaphragm layer, it is possible to reduce pollution of the external environment to back pole plate layer；And it is formed by two variable condenser compositions
Differential type capacitance structure, not only can be improved the sensitivity of MEMS device, but also the signal-to-noise ratio of MEMS device can be improved.
By the way that the first stop-layer in the first sacrificial layer, the second sacrificial layer and 3rd sacrifice layer, second will be located at respectively
Stop-layer and third stop-layer form the second cavity, third cavity and the 4th cavity, are effectively controlled as hard mask
Lateral encroaching depth, it is possible to reduce the parasitic capacitance of capacitive-type silicon microphone two sides, be conducive to improve microphone sensitivity and
Reliability.
By between substrate and the first vibrating diaphragm layer, between the first vibrating diaphragm layer and back pole plate layer, back pole plate layer and second vibration
Film layer, the first stop-layer, the second stop-layer, third stop-layer and passivation layer all exposed surfaces on form anti-adherency
Layer, anti adhering layer is the material with hydrophobicity and low surface adhesion, can be under the premise of not influencing MEMS device performance
Reinforce the protection to MEMS device.
Detailed description of the invention
By referring to the drawings to the description of the utility model embodiment, above-mentioned and other mesh of the utility model
, feature and advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows the MEMS device sectional view according to the utility model embodiment；
It is corresponding that Fig. 2 a to Fig. 2 m shows each step in the manufacturing method according to the MEMS device of the utility model embodiment
Sectional view.
Specific embodiment
Hereinafter reference will be made to the drawings is more fully described the utility model.In various figures, identical element is using similar
Appended drawing reference indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to be not shown
Certain well known parts.For brevity, the semiconductor structure obtained after several steps can be described in a width figure.
It should be appreciated that being known as being located at another floor, another area when by a floor, a region in the structure of outlines device
When domain " above " or " top ", can refer to above another layer, another region, or its with another layer, it is another
Also comprising other layers or region between a region.Also, if device overturn, this layer, a region will be located at it is another
Layer, another region " following " or " lower section ".
If, herein will be using " A is directly on B in order to describe located immediately at another layer, another region above scenario
The form of presentation of face " or " A on B and therewith abut ".In this application, " A is in B " indicates that A is located in B, and
And A and B is abutted directly against, rather than A is located in the doped region formed in B.
Many specific details of the utility model, such as the structure of device, material, size, place are described hereinafter
Science and engineering skill and technology, to be more clearly understood that the utility model.But just as the skilled person will understand,
The utility model can not be realized according to these specific details.
The MEMS device of the utility model embodiment is mainly used for microphone.
Fig. 1 shows the MEMS device sectional view according to the utility model embodiment.
Fig. 1 is please referred to, there is the first cavity 101 in substrate 100.First sacrificial layer 201 is located on substrate 100, and first is sacrificial
There is the second cavity 204 in domestic animal layer 201, the second cavity 204 can be corresponding with the first cavity 101, and the first cavity 101 and second is empty
Chamber 204 communicates with each other.First vibrating diaphragm layer 301 is located on the first sacrificial layer 201, and at least part of the first vibrating diaphragm layer 301 is by
The support of one sacrificial layer 201, the first vibrating diaphragm layer 301 include the first opening 302, the first opening positioned at 301 layers of centre of the first vibrating diaphragm
302 can be used as acoustic aperture, and the first opening 302 positioned at both sides can be used as relief hole.Second sacrificial layer 401 is located at the first vibrating diaphragm
On layer 301, there is third cavity 404, third cavity 404 and the first cavity 101, the second cavity 204 are right in the second sacrificial layer 401
It answers, and is connected to the second cavity 204 with third cavity 404 by the first opening 302.Back pole plate layer 501 is located at second and sacrifices
On layer 401, at least part of back pole plate layer 501 is supported by the second sacrificial layer 401, so that back pole plate layer 501 and the first vibrating diaphragm
Layer 301 forms first capacitor device.Back pole plate layer 501 includes multiple thirds opening 502, and third opening 502 is located at third cavity 404
Within.3rd sacrifice layer 601 is located on back pole plate layer 501, has the 4th cavity 604, the 4th cavity in 3rd sacrifice layer 601
604 is corresponding with the first cavity 101, the second cavity 204, third cavity 404, and third opening 502 is by third cavity 404 and the
The connection of four cavitys 604.Second vibrating diaphragm layer 701 is located in 3rd sacrifice layer 601, and at least part of the second vibrating diaphragm layer 701 is by
Three sacrificial layers 601 support, so that back pole plate layer 501 and the second vibrating diaphragm layer 701 form the second capacitor, the second vibrating diaphragm layer 701 packet
The second opening 702 is included, the second opening 702 positioned at 701 layers of centre of the second vibrating diaphragm can be used as acoustic aperture, and second positioned at both sides opens
Mouth 702 can be used as relief hole.
Surface that passivation layer 801 at least covers 3rd sacrifice layer 601 and the second vibrating diaphragm layer 701 are adjacent to the third sacrifice
A part of surface of layer 601；Specifically, passivation layer 801 be located at 601 upper surface of 3rd sacrifice layer, 701 side of the second vibrating diaphragm layer with
And second vibrating diaphragm layer 701 at least partly upper surface.
Anti adhering layer 802 be located at the first cavity 101, the second cavity 204, third cavity 404 and the 4th cavity 604 at least it
One inner wall；Specifically, anti adhering layer 802 be located between substrate 100 and the first vibrating diaphragm layer 301, the first vibrating diaphragm layer 301 and backplane
Between plate layer 501, back pole plate layer 501 and the second vibrating diaphragm layer 701, the first stop-layer 203, the second stop-layer 403, third stop-layer
603 and all exposed surfaces of passivation layer 801 on.
The first stop-layer 203 is arranged in second cavity, 204 inner wall, and the first stop-layer 203 is located at substrate 100 and the first vibrating diaphragm layer
Between 301, the second cavity 204 and the first stop-layer 203 are spaced, are hard mask with the first stop-layer 203, forms the second cavity
204.The second stop-layer 403 is arranged in 404 inner wall of third cavity, and the second stop-layer 403 is located at the first vibrating diaphragm layer 301 and back pole plate layer
Between 501, third cavity 404 and the second stop-layer 403 are spaced, are hard mask with the second stop-layer 403, forms third cavity
404.Third stop-layer 603 is arranged in 4th cavity, 604 inner wall, and third stop-layer 603 is located at back pole plate layer 501 and the second vibrating diaphragm layer
Between 701, the 4th cavity 604 is spaced with third stop-layer 603, is hard mask with third stop-layer 603, forms the 4th cavity
604.First stop-layer 203 and the first vibrating diaphragm layer 301 limit the second cavity 204, and the second stop-layer 403 and back pole plate layer 501 limit
Determine third cavity 404, third stop-layer 603 and the second vibrating diaphragm layer 701 limit the 4th cavity 604.Preferably, the first stop-layer
203,603 layers of the second stop-layer 403 and third stopping are aligned with each other along the direction perpendicular to principal plane.
The MEMS device of the utility model embodiment further includes the first conductive channel 304, the second conductive channel 503 and
Three conductive channels 704.First conductive channel 304 passes through passivation layer 801,3rd sacrifice layer 601, the second sacrificial layer from top to bottom
401, reach the first vibrating diaphragm layer 301；Specifically, 304 one end of the first conductive channel reaches 301 upper surface of the first vibrating diaphragm layer, passes through
Second sacrificial layer 401,3rd sacrifice layer 601, passivation layer 801 and anti adhering layer 802, so that the first conductive channel 304 is another
One end exposure.Second conductive channel 503 sequentially passes through passivation layer 801 and 3rd sacrifice layer 601 from top to bottom, reaches back pole plate layer
501；Specifically, 503 one end of the second conductive channel reaches 501 upper surface of back pole plate layer, passes through 3rd sacrifice layer 601, passivation layer
801 and anti adhering layer 802, so that the other end exposure of the second conductive channel 503.Third conductive channel 704 is worn from top to bottom
Transpassivation layer 801 reaches the second vibrating diaphragm layer 701；Specifically, 704 one end of third conductive channel reaches table in the second vibrating diaphragm layer 701
Face passes through passivation layer 801 and anti adhering layer 802, so that the other end exposure of third conductive channel 704.
According to the MEMS device of the utility model embodiment, by by back pole plate layer 501 be placed in the first vibrating diaphragm layer 301 with
And second between vibrating diaphragm layer 701, it is possible to reduce pollution of the external environment to back pole plate layer 501, to improve MEMS device performance；
And two variable condenser composition differential type capacitance structures are formed by, the sensitivity of MEMS device not only can be improved, and
And the signal-to-noise ratio of MEMS device can be improved.
By the way that be located in the first sacrificial layer 201, the second sacrificial layer 401 and 3rd sacrifice layer 601 first is stopped respectively
Only layer 203, the second stop-layer 403 and third stop-layer 603 are used as hard mask, form the second cavity 204, third cavity 404
And the 4th cavity 604, it is effectively controlled lateral encroaching depth, it is possible to reduce the parasitism electricity of capacitive-type silicon microphone two sides
Hold, is conducive to the sensitivity and reliability that improve microphone.
By between substrate 100 and the first vibrating diaphragm layer 301, between the first vibrating diaphragm layer 301 and the back pole plate layer 501,
Back pole plate layer 501 and the second vibrating diaphragm layer 701, the first stop-layer 203, the second stop-layer 403, third stop-layer 603 and passivation
Anti adhering layer 802 is formed on all exposed surfaces of layer 801, anti adhering layer 802 is with hydrophobicity and low surface adhesion
Material can reinforce the protection to MEMS device under the premise of not influencing MEMS device performance.
It is corresponding that Fig. 2 a to Fig. 2 m shows each step in the manufacturing method according to the MEMS device of the utility model embodiment
Sectional view.
As shown in Figure 2 a, pass through thermal oxide, low-pressure chemical vapor phase deposition or plasma enhanced chemical vapor deposition
Method forms the first sacrificial layer 201 on substrate 100.First sacrificial layer 201 can be silicon dioxide layer, and thickness can be 0.5
~2 μm.Photoetching, etching are carried out to the first sacrificial layer 201, form first through hole 202, first through hole in the first sacrificial layer 201
202 can be located remotely from the position at 201 center of the first sacrificial layer.
Then, as in shown in Fig. 2 b, first through hole 202 is deposited, the first stop-layer 203 is formed.The deposition side
Method can be the method for low-pressure chemical vapor phase deposition, plasma enhanced chemical vapor deposition etc..Depositing the material formed can be with
It is silicon nitride or other suitable resistant materials.Then by the way of photoetching or etching, by the first stop-layer 203
Upper surface it is parallel with the upper surface of the first sacrificial layer 201.
Then, as in shown in Fig. 2 c, by the way of low-pressure chemical vapor phase deposition, in the first stop-layer 203 and extremely
The first vibrating diaphragm layer 301 is formed on the first sacrificial layer of small part 201.It is sacrificial that the side edge of first vibrating diaphragm layer 301 can not reach first
The side edge of domestic animal layer 201, so that the first sacrificial layer 201 is at least partly exposed by the upper surface of proximal.First vibrating diaphragm layer 301
It can be formed by DOPOS doped polycrystalline silicon.By lithography and etching technique, the first opening 302 is graphically formed to the first vibrating diaphragm layer 301,
The first opening 302 positioned at 301 layers of centre of the first vibrating diaphragm can be used as acoustic aperture, and the first opening 302 positioned at both sides can be used as
Relief hole.First vibrating diaphragm layer 301 can be polysilicon layer, and thickness can be 0.3~1.0um.
Then, as in shown in Fig. 2 d, using low-pressure chemical vapor phase deposition (LPCVD) or plasma enhanced chemical gas
The method for mutually depositing (PECVD), in the upper surface of the first vibrating diaphragm layer 301, the side of the first vibrating diaphragm layer 301 and the first sacrificial layer
The upper surface of 201 exposures forms the second sacrificial layer 401.Photoetching or etching are carried out to the second sacrificial layer 401 again, sacrificed second
The second through-hole 402 is formed in layer 401, which can be located at except the first opening 302 of the first vibrating diaphragm layer 301, with
And first on vibrating diaphragm layer 301, it is preferable that the second through-hole 402 is corresponding with the first through hole 202 of the first sacrificial layer 201.Second is sacrificial
Domestic animal layer 401 can be silicon dioxide layer, and thickness can be 1.0~4.0 μm.
Then, as in shown in Fig. 2 e, the second through-hole 402 is deposited, the second stop-layer 403 is formed, it is preferable that the
Two stop-layers 403 are corresponding with the first stop-layer 203.The deposition method can be the method for low-pressure chemical vapor phase deposition, plasma
Enhanced chemical vapor deposition etc..The material that deposition is formed can be silicon nitride or other suitable resistant materials.Then
It is by the way of photoetching or etching, the upper surface of the second stop-layer 403 is parallel with the upper surface of the second sacrificial layer 401.
Then, as in shown in Fig. 2 f, by the way of low-pressure chemical vapor phase deposition, in the second stop-layer 403 and extremely
Back pole plate layer 501 is formed on the second sacrificial layer of small part 401.Then it is patterned by lithography and etching technique, forms the
Three openings 502, third opening 502 can be acoustic aperture.The side edge of back pole plate layer 501 can not reach the side of the second sacrificial layer 401
Edge, so that the second sacrificial layer 401 is at least partly exposed by the upper surface of proximal, it is preferable that one of back pole plate layer 501
Side edge is corresponding with 301 1 side edges of the first vibrating diaphragm layer, another side edge of back pole plate layer 501 does not reach the first vibrating diaphragm layer
301 another side edge.Back pole plate layer 501 can be the polysilicon layer of doping, and thickness can be 1.0~3.0um.
Then, as in shown in Fig. 2 g, using low-pressure chemical vapor phase deposition (LPCVD) or plasma enhanced chemical gas
The method for mutually depositing (PECVD), in the upper surface of back pole plate layer 501, the side of back pole plate layer 501 and the second sacrificial layer 401
Exposed upper surface forms 3rd sacrifice layer 601.Photoetching or etching are carried out to 3rd sacrifice layer 601 again, in 3rd sacrifice layer
Third through-hole 602 is formed in 601, which can be located at except the first opening 302 of the first vibrating diaphragm layer 301, and
On back pole plate layer 501, it is preferable that the second through-hole 402 of third through-hole 602 and the second sacrificial layer 401, the first sacrificial layer 201
First through hole 202 it is corresponding.Second sacrificial layer 401 can be silicon dioxide layer, and thickness can be 1.0~4.0 μm.
Then, as in shown in Fig. 2 h, third through-hole 602 is deposited, third stop-layer 603 is formed, it is preferable that the
Three stop-layers 603 are corresponding with the first stop-layer 203, the second stop-layer 403.The deposition method can be low-pressure chemical vapor phase deposition
Method, plasma enhanced chemical vapor deposition etc..The material that deposition is formed can be silicon nitride or other are suitable resistance to
Corrosion material.Then by the way of photoetching or etching, by the upper surface of third stop-layer 603 and 3rd sacrifice layer 601
Upper surface is parallel.
Then, as in shown in Fig. 2 i, by the way of low-pressure chemical vapor phase deposition, in third stop-layer 603 and extremely
The second vibrating diaphragm layer 701 is formed in small part 3rd sacrifice layer 601.It is sacrificial that the side edge of second vibrating diaphragm layer 701 can not reach third
The side edge of domestic animal layer 601, so that 3rd sacrifice layer 601 is at least partly exposed by the upper surface of proximal, specifically, the second vibration
701 1 side edges of film layer do not reach the side edge of 3rd sacrifice layer 601, another side edge of the second vibrating diaphragm layer 701 less than
Up to another side edge of back pole plate layer 501.Second vibrating diaphragm layer 701 can be formed by DOPOS doped polycrystalline silicon.Pass through lithography and etching
Technique graphically forms the second opening 702 to the second vibrating diaphragm layer 701, the second opening 702 positioned at 701 layers of centre of the second vibrating diaphragm
It can be used as acoustic aperture, the second opening 702 positioned at both sides can be used as relief hole.Second opening 702 be located at third through-hole 602 it
Between, i.e., the second opening 702 is between third stop-layer 603.Preferably, the second opening 702 is corresponding with the first opening 302.The
One vibrating diaphragm layer 301 can be polysilicon layer, and thickness can be 0.3~1.0um.
Then, as in shown in Fig. 2 j, pass through the second sacrificial layer of lithography and etching 401 and 3rd sacrifice layer 601, respectively shape
At the first passage of the second vibrating diaphragm layer 701 and the second channel of back pole plate layer 501.First passage one end reaches the first vibrating diaphragm layer
301 upper surfaces pass through the second sacrificial layer 401,3rd sacrifice layer 601, so that at least partly upper surface of the first vibrating diaphragm layer 301 is sudden and violent
Dew.Second channel one end reaches 501 upper surface of back pole plate layer, 3rd sacrifice layer 601 is passed through, so that back pole plate layer 501 is at least
Portion of upper surface exposure.
Then by techniques such as lithography and etchings, the first conductive channel 304 is formed in first passage respectively, is led to second
The second conductive channel 503 is formed in road, forms third conductive channel 704 in 701 upper surface of the second vibrating diaphragm layer.First conductive channel
304 one end reach 301 upper surface of the first vibrating diaphragm layer, pass through the second sacrificial layer 401,3rd sacrifice layer 601, so that first is conductive logical
The other end exposure in road 304.Second conductive channel, 503 one end reaches 501 upper surface of back pole plate layer, passes through 3rd sacrifice layer 601,
So that the other end exposure of the second conductive channel 503.704 one end of third conductive channel reaches the table in the second vibrating diaphragm layer 701
Face, other end exposure.The material for forming the first conductive channel 304, the second conductive channel 503 and third conductive channel 704 can
To be that perhaps the metals such as Al are also possible to Cr-Au perhaps the alloys such as Ti-Pt-Au are also possible to fine aluminium Al, aluminium silicon or Ti- Au
TiN-Al-Si mixture etc., height can be 0.5~2um.
Then, as in shown in Fig. 2 k, using the method for plasma enhanced chemical vapor deposition (PECVD), in third
At least partly upper surface of sacrificial layer 601, the side of the second vibrating diaphragm layer 701 and the second vibrating diaphragm layer 701 forms passivation layer 801,
Specifically, passivation layer 801 is located at except the second opening 702 of the second vibrating diaphragm layer 701.The height of the upper surface of passivation layer 801 is low
In the first conductive channel 304, the second conductive channel 503 and third conductive channel 704.Passivation layer 801 can be corrosion-resistant material
Material, such as silicon nitride.
Then, as in shown in Fig. 2 l, chemically mechanical polishing CMP or reduction process are carried out to 100 lower surface of substrate, so that
The thickness of substrate 100 is suitable.Then pass through the method for dual surface lithography and etching, 100 lower surface of etched substrate, until the first sacrifice
At layer 201, the first cavity 101 is formed.First cavity 101 is located within the first stop-layer 203.
Then, as in shown in Fig. 2 m, by hydrofluoric acid or buffered oxide etch liquid (Buffered Oxide Etch,
BOE) the mode of selective wet etching is hard mask with the first stop-layer 203, and it is sacrificial first to corrode first by the first cavity 101
Domestic animal layer 201, forms the second cavity 204；It is hard mask with the second stop-layer 403, passes through the first opening of the first vibrating diaphragm layer 301
302 corrode the second sacrificial layer 401, form third cavity 404；It is hard mask with third stop-layer 603, passes through the second vibrating diaphragm layer
701 the second opening 702 corrodes 3rd sacrifice layer 601, the 4th cavity 604 is formed, to complete the release of structure.
Then, such as shown in Figure 1, in the first cavity 101, the second cavity 204, third cavity 404 and the 4th cavity 604
At least one inner wall formed anti adhering layer 802；Specifically, between substrate 100 and the first vibrating diaphragm layer 301, the first vibrating diaphragm layer
Between 301 and back pole plate layer 501, back pole plate layer 501 and the second vibrating diaphragm layer 701, the first stop-layer 203, the second stop-layer 403,
Anti adhering layer 802 is formed on third stop-layer 603 and all exposed surfaces of passivation layer 801.Anti adhering layer 802 is preferably one
The aluminum oxide of layer thin SAM organic film or atomic layer deposition, with a thickness of 1~10nm, which has no effect on subsequent
The routing etc. of product forms the utility model due to the hydrophobicity and low surface adhesion of SAM organic film or aluminum oxide
The anti adhering layer 802 of embodiment MEMS device.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the utility model embodiment, these embodiments details all there is no detailed descriptionthe,
Not limiting the utility model is only the specific embodiment.Obviously, as described above, can make many modifications and variations.
These embodiments are chosen and specifically described to this specification, be in order to preferably explain the principles of the present invention and practical application,
To enable skilled artisan to utilize the utility model and modification on the basis of the utility model well
It uses.The utility model is limited only by the claims and their full scope and equivalents.
Claims (10)
1. a kind of MEMS device characterized by comprising
Substrate, the substrate have the first cavity；
First sacrificial layer is located on the substrate, has the second cavity in first sacrificial layer；
First vibrating diaphragm layer is located on first sacrificial layer, and at least part of first vibrating diaphragm layer is sacrificed by described first
Layer support；
Second sacrificial layer is located in first vibrating diaphragm layer, has third cavity in second sacrificial layer；
Back pole plate layer is located on second sacrificial layer, and at least part of the back pole plate layer is by the second sacrificial layer branch
Support, so that the back pole plate layer and first vibrating diaphragm layer form first capacitor device；
3rd sacrifice layer is located on the back pole plate layer, has the 4th cavity in the 3rd sacrifice layer；
Second vibrating diaphragm layer is located in the 3rd sacrifice layer, and at least part of second vibrating diaphragm layer is sacrificed by the third
Layer support, so that second vibrating diaphragm layer and the back pole plate layer form the second capacitor,
Wherein, the MEMS device further includes for limiting the multiple of the lateral dimension of at least one the described second to the 4th cavity
Stop-layer.
2. MEMS device according to claim 1, which is characterized in that first vibrating diaphragm layer includes the first opening, so that
Second cavity is connected to the third cavity.
3. MEMS device according to claim 1, which is characterized in that second vibrating diaphragm layer includes the second opening, so that
4th cavity is connected to external environment.
4. MEMS device according to claim 1, which is characterized in that the back pole plate layer includes third opening, so that institute
Third cavity is stated to be connected to the 4th cavity.
5. MEMS device according to claim 1, which is characterized in that the multiple stop-layer includes:
First stop-layer is located at second cavity inner wall, and using first stop-layer as hard mask, it is empty to form described second
Chamber；
Second stop-layer is located at the third cavity inner wall, and using second stop-layer as hard mask, it is empty to form the third
Chamber；
Third stop-layer, using the third stop-layer as hard mask, it is empty to form the described 4th positioned at the inner wall of the 4th cavity
Chamber.
6. MEMS device according to claim 5, which is characterized in that first stop-layer and first vibrating diaphragm layer are enclosed
Around second cavity, second stop-layer and the back pole plate layer surround the third cavity, the third stop-layer and
Second vibrating diaphragm layer surrounds the 4th cavity.
7. MEMS device according to claim 5, which is characterized in that first stop-layer, second stop-layer and
The third stop-layer is aligned with each other along the direction perpendicular to principal plane.
8. MEMS device according to claim 1, which is characterized in that further include: it is sacrificial at least to cover the third for passivation layer
The surface of domestic animal layer and second vibrating diaphragm layer are adjacent to a part of surface of the 3rd sacrifice layer.
9. MEMS device according to claim 1, which is characterized in that further include:
Anti adhering layer, the anti adhering layer are located at first cavity, second cavity, the third cavity and the described 4th
The inner wall of at least one cavity.
10. MEMS device according to claim 8, which is characterized in that further include:
First conductive channel passes through the passivation layer, the 3rd sacrifice layer, second sacrificial layer from top to bottom, reaches institute
State the first vibrating diaphragm layer；
Second conductive channel passes through the passivation layer and the 3rd sacrifice layer from top to bottom, reaches the back pole plate layer；And
Third conductive channel passes through the passivation layer from top to bottom, reaches second vibrating diaphragm layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820574999.4U CN208429863U (en) | 2018-04-20 | 2018-04-20 | MEMS device |
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| CN201820574999.4U CN208429863U (en) | 2018-04-20 | 2018-04-20 | MEMS device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108584863A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| WO2022135003A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Mems sensor chip, microphone, and electronic device |
| CN115714954A (en) * | 2022-12-28 | 2023-02-24 | 绍兴中芯集成电路制造股份有限公司 | MEMS device and manufacturing method thereof |
-
2018
- 2018-04-20 CN CN201820574999.4U patent/CN208429863U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108584863A (en) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
| CN108584863B (en) * | 2018-04-20 | 2024-07-19 | 杭州士兰集成电路有限公司 | MEMS device and method of manufacturing the same |
| WO2022135003A1 (en) * | 2020-12-25 | 2022-06-30 | 歌尔微电子股份有限公司 | Mems sensor chip, microphone, and electronic device |
| CN115714954A (en) * | 2022-12-28 | 2023-02-24 | 绍兴中芯集成电路制造股份有限公司 | MEMS device and manufacturing method thereof |
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