CN108600928A - MEMS device and its manufacturing method - Google Patents
MEMS device and its manufacturing method Download PDFInfo
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- CN108600928A CN108600928A CN201810362532.8A CN201810362532A CN108600928A CN 108600928 A CN108600928 A CN 108600928A CN 201810362532 A CN201810362532 A CN 201810362532A CN 108600928 A CN108600928 A CN 108600928A
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 238000001947 vapour-phase growth Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Micromachines (AREA)
Abstract
Disclose a kind of MEMS device, wherein include the substrate with the first cavity；First sacrificial layer is located on substrate；First back pole plate layer is located on the first sacrificial layer, and at least part of the first back pole plate layer is supported by the first sacrificial layer；Second sacrificial layer is located on the first back pole plate layer；Vibrating diaphragm layer is located on the second sacrificial layer, and at least part of vibrating diaphragm layer is supported by the second sacrificial layer so that vibrating diaphragm layer forms the first capacitor with the first back pole plate layer；3rd sacrifice layer is located in vibrating diaphragm layer；Second back pole plate layer is located in 3rd sacrifice layer, and at least part of the second back pole plate layer is supported by 3rd sacrifice layer so that the second back pole plate layer forms the second capacitor with vibrating diaphragm layer.By the way that vibrating diaphragm layer is placed between the first back pole plate layer and the second back pole plate layer, be formed by two variable condensers and then forms differential type capacitance structure, meets the needs of market highly sensitive to silicon microphone, low noise, to improve the performance of MEMS device.
Description
Technical field
The present invention relates to MEMS device technical fields, more particularly, to a kind of micro- silicon microphone structure of capacitive MEMS
And its manufacturing method.
Background technology
The micro- silicon microphones of MEMS are rapidly developed in recent years, and smart mobile phone, laptop, bluetooth headset,
It is used widely in the consumption electronic products such as intelligent sound box.The micro- silicon microphones of MEMS mainly contain a MEMS chip and IC
Voice signal is converted into electric signal by chip by MEMS chip.Capacitance-type micro silicon microphone is by rigid perforated back pole plate and bullet
Property vibrating diaphragm constitute variable capacitance, when external sound pressure acts on vibrating diaphragm the vibration of membrane that causes to shake, to make its capacitance change,
And then change the potential between vibrating diaphragm and backboard, realize the conversion of sound pressure signal and electric signal.
Currently, capacitive-type silicon microphone mostly uses greatly a vibrating diaphragm and a back board structure to constitute a variable capacitance,
Its sensitivity and signal-to-noise ratio are limited.With the fast development of the consumer products such as high-end handsets and intelligent sound box, market there is an urgent need to
Highly sensitive, low noise silicon microphone.
In the preparation process of silicon microphone, mostly uses oxide layer as sacrificial layer, carried out by HF acid or BOE solution
Wet etching or gas phase HF stifling method removes sacrificial oxide layer, completes the release of structure.As Fig. 1 shows that one kind is existing
At least part of capacitive-type silicon microphone, back pole plate layer 501 is supported by the second sacrificial layer 401 so that vibrating diaphragm layer 301 and backplane
Plate layer 501 forms capacitor.The thickness of the first sacrificial layer 201 between vibrating diaphragm layer 301 and substrate 100 and vibrating diaphragm layer 301 and the back of the body
The thickness of the second sacrificial layer 401 between pole plate layer 501 is different, however during discharging oxide layer, need excessive cross
The release that structure is completed to corrosion easily causes vibrating diaphragm layer 301 and is contacted with substrate 100, is unfavorable for the reliability of microphone；If
Excessive 501 region of vibrating diaphragm layer 301 and back pole plate layer is reserved on the outside of cavity, there will be larger parasitic capacitances, and then reduce
The sensitivity of microphone.
Invention content
Problem to be solved by this invention is to provide a kind of MEMS device and its manufacturing method, wherein by by vibrating diaphragm
Layer is placed between the first back pole plate layer and the second back pole plate layer, is formed by two variable condensers, is met market to silicon
Microphone high sensitivity, the demand of low noise, to improve the performance of MEMS device.
According to an aspect of the present invention, a kind of MEMS device is provided, including：Substrate, the substrate have the first cavity；The
One sacrificial layer is located on the substrate, has the second cavity in first sacrificial layer；First back pole plate layer is located at described the
On one sacrificial layer, at least part of the first back pole plate layer is supported by first sacrificial layer；Second sacrificial layer is located at institute
It states on the first back pole plate layer, there is third cavity in second sacrificial layer；Vibrating diaphragm layer is located on second sacrificial layer, institute
At least part for stating vibrating diaphragm layer is supported by second sacrificial layer so that the vibrating diaphragm layer is formed with the first back pole plate layer
First capacitor；3rd sacrifice layer is located in the vibrating diaphragm layer, has the 4th cavity in the 3rd sacrifice layer；Second backplane
Plate layer is located in the 3rd sacrifice layer, and at least part of the second back pole plate layer is supported by the 3rd sacrifice layer, is made
It obtains the second back pole plate layer and forms the second capacitor with the vibrating diaphragm layer, wherein the MEMS device further includes for limiting
Multiple stop-layers of the lateral dimension of at least one described second to the 4th cavity.
Preferably, the first back pole plate layer includes the first opening so that second cavity connects with the third cavity
It is logical.
Preferably, the second back pole plate layer includes the second opening so that the 4th cavity is connected to external environment.
Preferably, the multiple stop-layer includes：First stop-layer is located at second cavity inner wall, with described first
Stop-layer is hard mask, forms second cavity；Second stop-layer is located at the third cavity inner wall, stops with described second
Only layer is hard mask, forms the third cavity；Third stop-layer is located at the inner wall of the 4th cavity, is stopped with the third
Only layer is hard mask, forms the 4th cavity.
Preferably, first stop-layer and the first back pole plate layer surround second cavity, and described second stops
It is empty around the described 4th that layer and the vibrating diaphragm layer surround the third cavity, the third stop-layer and the second back pole plate layer
Chamber.
Preferably, first stop-layer, second stop-layer and the third stop-layer are along perpendicular to principal plane
Direction it is aligned with each other.
Preferably, further include：Passivation layer at least covers the surface of the 3rd sacrifice layer and the second back pole plate layer
A part of surface of the neighbouring 3rd sacrifice layer.
Preferably, further include：Anti adhering layer, the anti adhering layer are located at first cavity, second cavity, described
The inner wall of at least one third cavity and the 4th cavity.
Preferably, further include：First conductive channel passes through the passivation layer, 3rd sacrifice layer, described from top to bottom
Second sacrificial layer reaches the first back pole plate layer；Second conductive channel passes through the passivation layer and the third from top to bottom
Sacrificial layer reaches the vibrating diaphragm layer；And third conductive channel, the passivation layer is passed through from top to bottom, reaches second back of the body
Pole plate layer.
According to an aspect of the present invention, a kind of manufacturing method of MEMS device is provided, including：Is sequentially formed on substrate
One sacrificial layer, the first back pole plate layer, the second sacrificial layer, vibrating diaphragm layer, 3rd sacrifice layer and the second back pole plate layer；In the substrate
The first cavity of middle formation；Via first cavity, form the second cavity in first sacrificial layer, first cavity and
Second cavity communicates with each other, and at least part of the first back pole plate layer is supported by first sacrificial layer；Described
Third cavity is formed in second sacrificial layer, at least part of the vibrating diaphragm layer is supported by second sacrificial layer so that described
Vibrating diaphragm layer forms the first capacitor with the first back pole plate layer；And the 4th cavity, institute are formed in the 3rd sacrifice layer
At least part for stating the second back pole plate layer is supported by the 3rd sacrifice layer so that the vibrating diaphragm layer and second back pole plate
Layer forms the second capacitor, and the manufacturing method further includes forming multiple stop-layers for limiting the described second to the 4th cavity extremely
One of few lateral dimension.
Preferably, further include：The first opening is formed in the first back pole plate layer, in the step for forming the third cavity
In rapid, etchant is from second cavity via the second sacrificial layer described in first opening etching.
Preferably, further include：The second opening is formed in the second back pole plate layer, in the step for forming the 4th cavity
In rapid, etchant is via 3rd sacrifice layer described in second opening etching.
Preferably, the step of forming multiple stop-layers include：Forming first sacrificial layer and first back pole plate
Between the step of layer, first stop-layer is formed in first sacrificial layer；Forming second sacrificial layer and described
Between the step of vibrating diaphragm layer, second stop-layer is formed in second sacrificial layer；And forming the third sacrifice
Between the step of layer and the second back pole plate layer, the third stop-layer is formed in the 3rd sacrifice layer.
Preferably, first stop-layer and the first back pole plate layer surround second cavity, and described second stops
It is empty around the described 4th that layer and the vibrating diaphragm layer surround the third cavity, the third stop-layer and the second back pole plate layer
Chamber.
Preferably, first stop-layer, second stop-layer and the third stop-layer are along perpendicular to principal plane
Direction it is aligned with each other.
Preferably, after forming the second back pole plate layer, further include：Passivation layer is formed, the third is at least covered
The surface of sacrificial layer and the second back pole plate layer are adjacent to a part of surface of the 3rd sacrifice layer.
Preferably, after the step of forming four cavity, further include：Form anti adhering layer, the anti adhering layer
Positioned at the inner wall of at least one first cavity, second cavity, the third cavity and the 4th cavity.
Preferably, after the step of forming the second back pole plate layer, further include：The first conductive channel is formed, from upper
The passivation layer, the 3rd sacrifice layer, second sacrificial layer are passed through to lower, reaches the first back pole plate layer；Form the
Two conductive channels sequentially pass through the passivation layer and the 3rd sacrifice layer from top to bottom, reach the vibrating diaphragm layer；And it is formed
Third conductive channel passes through the passivation layer from top to bottom, reaches the second back pole plate layer.
MEMS device according to the ... of the embodiment of the present invention, by the way that vibrating diaphragm layer is placed on the first back pole plate layer and the second backplane
Between plate layer, two capacitors are formed by, differential type capacitance structure is formed, can not only improve the sensitivity of MEMS device,
And the signal-to-noise ratio of MEMS device can be improved, to improve the performance of MEMS device.
By respectively by the first sacrificial layer, the second sacrificial layer and 3rd sacrifice layer the first stop-layer, second
Stop-layer and third stop-layer form the second cavity, third cavity and the 4th cavity, are effectively controlled as hard mask
Lateral encroaching depth, it is possible to reduce the parasitic capacitance of capacitive-type silicon microphone both sides, be conducive to improve microphone sensitivity and
Reliability.
By between substrate and the first back pole plate layer, between the first back pole plate layer and vibrating diaphragm layer, vibrating diaphragm layer with second the back of the body
Pole plate layer, the first stop-layer, the second stop-layer, third stop-layer and passivation layer all exposed surfaces on form anti-adherency
Layer, anti adhering layer is the material with hydrophobicity and low surface adhesion, can be under the premise of not influencing MEMS device performance
Reinforce the protection to MEMS device.
Description of the drawings
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings：
Fig. 1 shows capacitive-type silicon microphone sectional view according to prior art；
Fig. 2 shows MEMS device sectional views according to the ... of the embodiment of the present invention；
Fig. 3 a to Fig. 3 m show in the manufacturing method of MEMS device according to the ... of the embodiment of the present invention that each step is corresponding and cut open
Face figure.
Specific implementation mode
Hereinafter reference will be made to the drawings is more fully described the present invention.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to be not shown certain
Well known part.For brevity, the semiconductor structure that can be obtained after several steps described in a width figure.
It should be appreciated that in the structure of outlines device, it is known as positioned at another floor, another area when by a floor, a region
When domain " above " or " top ", can refer to above another layer, another region, or its with another layer, it is another
Also include other layers or region between a region.Also, if device overturn, this layer, a region will be located at it is another
Layer, another region " following " or " lower section ".
If, herein will be using " A is directly on B in order to describe located immediately at another layer, another region above scenario
The form of presentation of face " or " A is on B and abuts therewith ".In this application, " A is in B " indicates that A is located in B, and
And A and B is abutted directly against rather than A is located in the doped region formed in B.
Many specific details of the present invention, such as the structure of device, material, size, processing work is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
The MEMS device of the embodiment of the present invention is mainly used for microphone.
Fig. 2 shows MEMS device sectional views according to the ... of the embodiment of the present invention.
Fig. 2 is please referred to, there is the first cavity 101 in substrate 100.First sacrificial layer 201 is located on substrate 100, and first is sacrificial
There is the second cavity 204 in domestic animal layer 201, the second cavity 204 can be corresponding with the first cavity 101, and the first cavity 101 and second is empty
Chamber 204 communicates with each other.First back pole plate layer 301 is located on the first sacrificial layer 201, at least part of the first back pole plate layer 301
It is supported by the first sacrificial layer 201, the first back pole plate layer 301 includes the first opening 302, and the first opening 302 can be used as acoustic aperture.The
Two sacrificial layers 401 are located on the first back pole plate layer 301, in the second sacrificial layer 401 have third cavity 404, third cavity 404 with
First cavity 101, the second cavity 204 correspond to, and are connected the second cavity 204 and third cavity 404 by the first opening 302
It is logical.Vibrating diaphragm layer 501 is located on the second sacrificial layer 401, and at least part of vibrating diaphragm layer 501 is supported by the second sacrificial layer 401 so that
Vibrating diaphragm layer 501 and the first back pole plate layer 301 form the first capacitor, and vibrating diaphragm layer 501 passes through the first opening 302 and the first back pole plate
Layer 301 is connected to.3rd sacrifice layer 601 is located in vibrating diaphragm layer 501, has the 4th cavity 604 in 3rd sacrifice layer 601, and the 4th is empty
Chamber 604 is corresponding with the first cavity 101, the second cavity 204, third cavity 404.Second back pole plate layer 701 is located at 3rd sacrifice layer
On 601, at least part of the second back pole plate layer 701 is supported by 3rd sacrifice layer 601 so that vibrating diaphragm layer 501 and the second backplane
Plate layer 701 forms the second capacitor, and the second back pole plate layer 701 includes the second opening 702, and the second opening 702 can be used as acoustic aperture,
Second back pole plate layer 701 is connected to by the second opening 702 with vibrating diaphragm layer 501.
Passivation layer 801 at least cover 3rd sacrifice layer 601 surface and the second back pole plate layer 701 it is sacrificial adjacent to the third
A part of surface of domestic animal layer 601；Specifically, passivation layer 801 is located at 601 upper surface of 3rd sacrifice layer, 701 side of the second back pole plate layer
Face and at least partly upper surface of the second back pole plate layer 701.
Anti adhering layer 802 be located at the first cavity 101, the second cavity 204, third cavity 404 and the 4th cavity 604 at least it
One inner wall；Specifically, anti adhering layer 802 be located between substrate 100 and the first back pole plate layer 301, the first back pole plate layer 301 with
Between vibrating diaphragm layer 501, vibrating diaphragm layer 501 and the second back pole plate layer 701, the first stop-layer 203, the second stop-layer 403, third stop
On layer 603 and all exposed surfaces of passivation layer 801.
The first stop-layer 203 is arranged in second cavity, 204 inner wall, and the first stop-layer 203 is located at substrate 100 and the first back pole plate
Between layer 301, the second cavity 204 and the first stop-layer 203 are spaced, are hard mask with the first stop-layer 203, it is empty to form second
Chamber 204.The second stop-layer 403 is arranged in 404 inner wall of third cavity, and the second stop-layer 403 is located at the first back pole plate layer 301 and vibrating diaphragm
Between layer 501, third cavity 404 and the second stop-layer 403 are spaced, are hard mask with the second stop-layer 403, it is empty to form third
Chamber 404.Third stop-layer 603 is arranged in 4th cavity, 604 inner wall, and third stop-layer 603 is located at vibrating diaphragm layer 501 and the second back pole plate
Between layer 701, the 4th cavity 604 is spaced with third stop-layer 603, is hard mask with third stop-layer 603, it is empty to form the 4th
Chamber 604.First stop-layer 203 and the first back pole plate layer 301 limit the second cavity 204, the second stop-layer 403 and vibrating diaphragm layer 501
Third cavity 404 is limited, third stop-layer 603 and the second back pole plate layer 701 limit the 4th cavity 604.Preferably, first stops
603 layers of the 203, second stop-layer 403 of layer and third stopping are aligned with each other along the direction perpendicular to principal plane.
The MEMS device of the embodiment of the present invention further includes that the first conductive channel 304, the second conductive channel 504 and third are led
Electric channel 704.First conductive channel 304 passes through passivation layer 801,3rd sacrifice layer 601, the second sacrificial layer 401 from top to bottom, arrives
Up to the first back pole plate layer 301；Specifically, 304 one end of the first conductive channel reaches 301 upper surface of the first back pole plate layer, passes through the
Two sacrificial layers 401,3rd sacrifice layer 601, passivation layer 801 and anti adhering layer 802 so that the first conductive channel 304 it is another
End exposure.Second conductive channel 504 sequentially passes through passivation layer 801 and 3rd sacrifice layer 601 from top to bottom, reaches vibrating diaphragm layer 501；
Specifically, 504 one end of the second conductive channel reaches 501 upper surface of vibrating diaphragm layer, pass through 3rd sacrifice layer 601, passivation layer 801 and
Anti adhering layer 802 so that the other end of the second conductive channel 504 exposes.Third conductive channel 704 passes through passivation layer from top to bottom
801, reach the second back pole plate layer 701；Specifically, 704 one end of third conductive channel reaches 701 upper surface of the second back pole plate layer,
Across passivation layer 801 and anti adhering layer 802 so that the other end of third conductive channel 704 exposes.
MEMS device according to the ... of the embodiment of the present invention, by the way that vibrating diaphragm layer 501 is positioned over the first back pole plate layer 301 and
Between two back pole plate layers 701, two variable condensers are formed by, differential type capacitance structure is formed, can not only improve MEMS
The sensitivity of device, and the signal-to-noise ratio of MEMS device can be improved, to improve MEMS device performance.
By the way that first in the first sacrificial layer 201, the second sacrificial layer 401 and 3rd sacrifice layer 601 is stopped respectively
Only layer 203, the second stop-layer 403 and third stop-layer 603 are used as hard mask, form the second cavity 204, third cavity 404
And the 4th cavity 604, it is effectively controlled lateral encroaching depth, it is possible to reduce the parasitism electricity of capacitive-type silicon microphone both sides
Hold, is conducive to the sensitivity and the reliability that improve microphone.
By between substrate 100 and the first back pole plate layer 301, between the first back pole plate layer 301 and vibrating diaphragm layer 501, shake
Film layer 501 and the second back pole plate layer 701, the first stop-layer 203, the second stop-layer 403, third stop-layer 603 and passivation layer
Anti adhering layer 802 is formed on 801 all exposed surfaces, anti adhering layer 802 is with hydrophobicity and low surface adhesion
Material can reinforce the protection to MEMS device under the premise of not influencing MEMS device performance.
Fig. 3 a to Fig. 3 m show in the manufacturing method of MEMS device according to the ... of the embodiment of the present invention that each step is corresponding and cut open
Face figure.
As shown in Figure 3a, pass through thermal oxide, low-pressure chemical vapor phase deposition or plasma enhanced chemical vapor deposition
Method forms the first sacrificial layer 201 on substrate 100.First sacrificial layer 201 can be silicon dioxide layer, and thickness can be 0.5
~2 μm.Photoetching, etching are carried out to the first sacrificial layer 201, form first through hole 202, first through hole in the first sacrificial layer 201
202 can be located remotely from the position at 201 center of the first sacrificial layer.
Then, as in shown in Fig. 3 b, first through hole 202 is deposited, forms the first stop-layer 203.The deposition side
Method can be the method for low-pressure chemical vapor phase deposition, plasma enhanced chemical vapor deposition etc..Depositing the material formed can be with
It is silicon nitride or other suitable resistant materials.Then by the way of photoetching or etching, by the first stop-layer 203
Upper surface it is parallel with the upper surface of the first sacrificial layer 201.
Then, as in shown in Fig. 3 c, by the way of low-pressure chemical vapor phase deposition, in the first stop-layer 203 and extremely
The first back pole plate layer 301 is formed on the first sacrificial layer of small part 201.The lateral edges of first back pole plate layer 301 can not reach
The lateral edges of one sacrificial layer 201 so that the first sacrificial layer 201 is at least partly exposed by the upper surface of proximal.First backplane
Plate layer 301 can be formed by DOPOS doped polycrystalline silicon.By lithography and etching technique, the is graphically formed to the first back pole plate layer 301
One opening 302, acoustic aperture can be used as by being located at the first opening 302 of 301 layers of the first back pole plate.First back pole plate layer 301 can be
Polysilicon layer, thickness can be 1.0~3.0um.
Then, as in shown in Fig. 3 d, using low-pressure chemical vapor phase deposition (LPCVD) or plasma enhanced chemical gas
The method for mutually depositing (PECVD), it is sacrificial in the upper surface of the first back pole plate layer 301, the side of the first back pole plate layer 301 and first
The upper surface of 201 exposure of domestic animal layer forms the second sacrificial layer 401.Photoetching or etching are carried out to the second sacrificial layer 401 again, second
The second through-hole 402 is formed in sacrificial layer 401, which can be located at the first opening 302 of the first back pole plate layer 301
Except and the first back pole plate layer 301 on, it is preferable that the first through hole 202 of the second through-hole 402 and the first sacrificial layer 201 is right
It answers.Second sacrificial layer 401 can be silicon dioxide layer, and thickness can be 1.0~4.0 μm.
Then, as in shown in Fig. 3 e, the second through-hole 402 is deposited, forms the second stop-layer 403, it is preferable that the
Two stop-layers 403 are corresponding with the first stop-layer 203.The deposition method can be the method for low-pressure chemical vapor phase deposition, plasma
Enhanced chemical vapor deposition etc..The material that deposition is formed can be silicon nitride or other suitable resistant materials.Then
It is by the way of photoetching or etching, the upper surface of the second stop-layer 403 is parallel with the upper surface of the second sacrificial layer 401.
Then, as in shown in Fig. 3 f, by the way of low-pressure chemical vapor phase deposition, in the second stop-layer 403 and extremely
Vibrating diaphragm layer 501 is formed on the second sacrificial layer of small part 401.Then it is patterned by lithography and etching technique.Vibrating diaphragm layer 501
Lateral edges can not reach the lateral edges of the second sacrificial layer 401 so that the second sacrificial layer 401 by the upper surface of proximal at least
Part exposure a, it is preferable that lateral edges of vibrating diaphragm layer 501 are corresponding with 301 1 lateral edges of the first back pole plate layer, vibrating diaphragm layer
501 another lateral edges do not reach another lateral edges of the first back pole plate layer 301.Vibrating diaphragm layer 501 can be the more of doping
Crystal silicon layer, thickness can be 0.3~1.0um.
Then, as in shown in Fig. 3 g, using low-pressure chemical vapor phase deposition (LPCVD) or plasma enhanced chemical gas
The method for mutually depositing (PECVD) is exposed in the upper surface of vibrating diaphragm layer 501, the side of vibrating diaphragm layer 501 and the second sacrificial layer 401
Upper surface formed 3rd sacrifice layer 601.Photoetching or etching are carried out to 3rd sacrifice layer 601 again, in 3rd sacrifice layer 601
Third through-hole 602 is formed, which can be located at except the first opening 302 of the first back pole plate layer 301, Yi Jizhen
On film layer 501, it is preferable that the second through-hole 402 of third through-hole 602 and the second sacrificial layer 401, the first sacrificial layer 201
One through-hole 202 corresponds to.Second sacrificial layer 401 can be silicon dioxide layer, and thickness can be 1.0~4.0 μm.
Then, as in shown in Fig. 3 h, third through-hole 602 is deposited, forms third stop-layer 603, it is preferable that the
Three stop-layers 603 are corresponding with the first stop-layer 203, the second stop-layer 403.The deposition method can be low-pressure chemical vapor phase deposition
Method, plasma enhanced chemical vapor deposition etc..The material that deposition is formed can be silicon nitride or other are suitable resistance to
Corrosion material.Then by the way of photoetching or etching, by the upper surface of third stop-layer 603 and 3rd sacrifice layer 601
Upper surface is parallel.
Then, as in shown in Fig. 3 i, by the way of low-pressure chemical vapor phase deposition, in third stop-layer 603 and extremely
The second back pole plate layer 701 is formed in small part 3rd sacrifice layer 601.The lateral edges of second back pole plate layer 701 can not reach
The lateral edges of three sacrificial layers 601 so that 3rd sacrifice layer 601 is at least partly exposed by the upper surface of proximal, specifically, the
Two 701 1, back pole plate layer lateral edges do not reach the lateral edges of 3rd sacrifice layer 601, another side of the second back pole plate layer 701
Edge does not reach another lateral edges of vibrating diaphragm layer 501.Second back pole plate layer 701 can be formed by DOPOS doped polycrystalline silicon.Pass through light
It carves and etching technics is located at the second of 701 layers of the second back pole plate to 701 the second opening 702 of graphical formation of the second back pole plate layer
Opening 702 can be used as acoustic aperture.Between third through-hole 602, i.e., the second opening 702 is located at third and stops second opening 702
Between layer 603.Preferably, the second opening 702 is corresponding with the first opening 302.First back pole plate layer 301 can be polysilicon layer,
Its thickness can be 1.0~3.0um.
Then, as in shown in Fig. 3 j, passed through the second sacrificial layer of lithography and etching 401 and 3rd sacrifice layer 601, shape respectively
At the second channel of the first passage and vibrating diaphragm layer 501 of the second back pole plate layer 701.First passage one end reaches the first back pole plate layer
301 upper surfaces pass through the second sacrificial layer 401,3rd sacrifice layer 601 so that at least partly upper surface of the first back pole plate layer 301
Exposure.Second channel one end reaches 501 upper surface of vibrating diaphragm layer, passes through 3rd sacrifice layer 601 so that at least portion of vibrating diaphragm layer 501
Divide upper surface exposure.
Then by techniques such as lithography and etchings, the first conductive channel 304 is formed in first passage respectively, is led to second
The second conductive channel 504 is formed in road, forms third conductive channel 704 in 701 upper surface of the second back pole plate layer.First is conductive logical
304 one end of road reaches 301 upper surface of the first back pole plate layer, passes through the second sacrificial layer 401,3rd sacrifice layer 601 so that first leads
The other end of electric channel 304 exposes.Second conductive channel, 504 one end reaches 501 upper surface of vibrating diaphragm layer, passes through 3rd sacrifice layer
601 so that the other end of the second conductive channel 504 exposes.704 one end of third conductive channel reaches positioned at the second back pole plate layer
701 upper surfaces, other end exposure.Form the first conductive channel 304, the second conductive channel 504 and third conductive channel 704
Material can be that either the metals such as Al can also be the alloys such as Cr-Au Ti-Pt-Au to Au, can also be fine aluminium Al, aluminium silicon
Or Ti-TiN-Al-Si mixtures etc., height can be 0.5~2um.
Then, as in shown in Fig. 3 k, using the method for plasma enhanced chemical vapor deposition (PECVD), in third
At least partly upper surface of sacrificial layer 601, the side of the second back pole plate layer 701 and the second back pole plate layer 701 forms passivation layer
801, specifically, passivation layer 801 is located at except the second opening 702 of the second back pole plate layer 701.The upper surface of passivation layer 801
Height is less than the first conductive channel 304, the second conductive channel 504 and third conductive channel 704.Passivation layer 801 can be resistance to
Corrosion material, such as silicon nitride.
Then, as in shown in Fig. 3 l, chemically mechanical polishing CMP or reduction process are carried out to 100 lower surface of substrate so that
The thickness of substrate 100 is suitable.Then pass through the method for dual surface lithography and etching, 100 lower surface of etched substrate, until the first sacrifice
At layer 201, the first cavity 101 is formed.First cavity 101 is located within the first stop-layer 203.
Then, as in shown in Fig. 3 m, by hydrofluoric acid or buffered oxide etch liquid (Buffered Oxide Etch,
BOE) the mode of selective wet etching is hard mask with the first stop-layer 203, and it is sacrificial first to corrode first by the first cavity 101
Domestic animal layer 201, forms the second cavity 204；It is hard mask with the second stop-layer 403, passes through the first opening of the first back pole plate layer 301
302 corrode the second sacrificial layer 401, form third cavity 404；It is hard mask with third stop-layer 603, passes through the second back pole plate
Second opening 702 of layer 701 corrodes 3rd sacrifice layer 601, the 4th cavity 604 is formed, to complete the release of structure.
Then, such as shown in Figure 2, in the first cavity 101, the second cavity 204, third cavity 404 and the 4th cavity 604
At least one inner wall formed anti adhering layer 802；Specifically, between substrate 100 and the first back pole plate layer 301, the first backplane
Between plate layer 301 and vibrating diaphragm layer 501, vibrating diaphragm layer 501 and the second back pole plate layer 701, the first stop-layer 203, the second stop-layer
403, anti adhering layer 802 is formed on third stop-layer 603 and all exposed surfaces of passivation layer 801.Anti adhering layer 802 is preferred
For one layer thin of SAM organic films or the alundum (Al2O3) of atomic layer deposition, thickness is 1~10nm, which has no effect on
The routing etc. of subsequent product forms the present invention due to the hydrophobicity and low surface adhesion of SAM organic films or alundum (Al2O3)
The anti adhering layer 802 of embodiment MEMS device.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
As described above according to the embodiment of the present invention, these embodiments are also unlimited there is no all details of detailed descriptionthe
Make the specific embodiment that the invention is only described.Obviously, as described above, can make many modifications and variations.This specification
These embodiments are chosen and specifically described, are in order to preferably explain the principle of the present invention and practical application, to make affiliated skill
Art field technology personnel can utilize modification of the invention and on the basis of the present invention to use well.The present invention is only wanted by right
Ask the limitation of book and its full scope and equivalent.
Claims (18)
1. a kind of MEMS device, wherein including：
Substrate, the substrate have the first cavity；
First sacrificial layer is located on the substrate, has the second cavity in first sacrificial layer；
First back pole plate layer is located on first sacrificial layer, and at least part of the first back pole plate layer is by described first
Sacrificial layer supports；
Second sacrificial layer is located on the first back pole plate layer, has third cavity in second sacrificial layer；
Vibrating diaphragm layer is located on second sacrificial layer, and at least part of the vibrating diaphragm layer is supported by second sacrificial layer, is made
It obtains the vibrating diaphragm layer and forms the first capacitor with the first back pole plate layer；
3rd sacrifice layer is located in the vibrating diaphragm layer, has the 4th cavity in the 3rd sacrifice layer；
Second back pole plate layer is located in the 3rd sacrifice layer, and at least part of the second back pole plate layer is by the third
Sacrificial layer supports so that and the second back pole plate layer forms the second capacitor with the vibrating diaphragm layer,
Wherein, the MEMS device further includes the multiple of the lateral dimension for limiting at least one the described second to the 4th cavity
Stop-layer.
2. MEMS device according to claim 1, wherein the first back pole plate layer includes the first opening so that described
Second cavity is connected to the third cavity.
3. MEMS device according to claim 1, wherein the second back pole plate layer includes the second opening so that described
4th cavity is connected to external environment.
4. MEMS device according to claim 1, wherein the multiple stop-layer includes：
First stop-layer is located at second cavity inner wall, and using first stop-layer as hard mask, it is empty to form described second
Chamber；
Second stop-layer is located at the third cavity inner wall, and using second stop-layer as hard mask, it is empty to form the third
Chamber；
Third stop-layer is located at the inner wall of the 4th cavity, and using the third stop-layer as hard mask, it is empty to form the described 4th
Chamber.
5. MEMS device according to claim 4, wherein first stop-layer and the first back pole plate layer surround institute
State the second cavity, second stop-layer and the vibrating diaphragm layer surround the third cavity, the third stop-layer and described the
Two back pole plate layers surround the 4th cavity.
6. MEMS device according to claim 4, wherein first stop-layer, second stop-layer and described
Three stop-layers are aligned with each other along the direction perpendicular to principal plane.
7. MEMS device according to claim 1, wherein further include：Passivation layer at least covers the 3rd sacrifice layer
Surface and the second back pole plate layer are adjacent to a part of surface of the 3rd sacrifice layer.
8. MEMS device according to claim 1, wherein further include：
Anti adhering layer, the anti adhering layer are located at first cavity, second cavity, the third cavity and the described 4th
The inner wall of at least one cavity.
9. MEMS device according to claim 7 or 8, wherein further include：
First conductive channel passes through the passivation layer, the 3rd sacrifice layer, second sacrificial layer from top to bottom, reaches institute
State the first back pole plate layer；
Second conductive channel passes through the passivation layer and the 3rd sacrifice layer, reaches the vibrating diaphragm layer from top to bottom；And
Third conductive channel passes through the passivation layer from top to bottom, reaches the second back pole plate layer.
10. a kind of manufacturing method of MEMS device, wherein including：
Sequentially form on substrate the first sacrificial layer, the first back pole plate layer, the second sacrificial layer, vibrating diaphragm layer, 3rd sacrifice layer and
Second back pole plate layer；
The first cavity is formed in the substrate；
Via first cavity, the second cavity, first cavity and second sky are formed in first sacrificial layer
Chamber communicates with each other, and at least part of the first back pole plate layer is supported by first sacrificial layer；
Third cavity is formed in second sacrificial layer, at least part of the vibrating diaphragm layer is by the second sacrificial layer branch
Support so that the vibrating diaphragm layer forms the first capacitor with the first back pole plate layer；And
The 4th cavity is formed in the 3rd sacrifice layer, at least part of the second back pole plate layer is sacrificed by the third
Layer support so that the vibrating diaphragm layer forms the second capacitor with the second back pole plate layer,
Wherein, the manufacturing method further includes forming multiple stop-layers for limiting at least one the described second to the 4th cavity
Lateral dimension.
11. manufacturing method according to claim 10, wherein further include：First is formed in the first back pole plate layer
Opening, in the step of forming the third cavity, etchant is from second cavity via described in first opening etching
Second sacrificial layer.
12. manufacturing method according to claim 10, wherein further include：Second is formed in the second back pole plate layer
Opening, in the step of forming four cavity, etchant is via 3rd sacrifice layer described in second opening etching.
13. manufacturing method according to claim 10, wherein the step of forming multiple stop-layers include：
Between the step of forming first sacrificial layer and the first back pole plate layer, institute is formed in first sacrificial layer
State the first stop-layer；
Between the step of forming second sacrificial layer and the vibrating diaphragm layer, described second is formed in second sacrificial layer
Stop-layer；And
Between the step of forming the 3rd sacrifice layer and the second back pole plate layer, institute is formed in the 3rd sacrifice layer
State third stop-layer.
14. manufacturing method according to claim 13, wherein first stop-layer and the first back pole plate layer surround
Second cavity, second stop-layer and the vibrating diaphragm layer surround the third cavity, the third stop-layer and described
Second back pole plate layer surrounds the 4th cavity.
15. manufacturing method according to claim 13, wherein
First stop-layer, second stop-layer and the third stop-layer are right each other along the direction perpendicular to principal plane
It is accurate.
16. manufacturing method according to claim 10, wherein after forming the second back pole plate layer, further include：Shape
At passivation layer, at least cover the 3rd sacrifice layer surface and the second back pole plate layer adjacent to the 3rd sacrifice layer
A part of surface.
17. manufacturing method according to claim 10, wherein after the step of forming four cavity, further include：
Anti adhering layer is formed, the anti adhering layer is located at first cavity, second cavity, the third cavity and the described 4th
The inner wall of at least one cavity.
18. manufacturing method according to claim 16 or 17, wherein the step of forming the second back pole plate layer it
Afterwards, further include：
The first conductive channel is formed, the passivation layer, the 3rd sacrifice layer, second sacrificial layer is passed through from top to bottom, arrives
Up to the first back pole plate layer；
The second conductive channel is formed, sequentially passes through the passivation layer and the 3rd sacrifice layer from top to bottom, reaches the vibrating diaphragm
Layer；And
Third conductive channel is formed, passes through the passivation layer from top to bottom, reaches the second back pole plate layer.
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