CN103281659A - Micro-electro-mechanical-system (MEMS) microphone and manufacturing method thereof - Google Patents
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Abstract
本发明提供一种MEMS麦克风和制作方法，包括基底、背极板、振膜、绝缘层、支撑层和电极；背极板包括第一背极板和第二背极板，绝缘层包括第一绝缘层、第二绝缘层和第三绝缘层，支撑层包括第一支撑层和第二支撑层。第一绝缘层设置在基底和第一背极板之间，第二绝缘层设置在第一背极板的上方。第一支撑层设置在第二绝缘层和振膜之间，第二支撑层设置在振膜和第三绝缘层之间，在振膜上设置有向第二绝缘层方向延伸的振膜突出件，在第三绝缘层上设置有向振膜方向延伸的绝缘层突出件；第二背极板设置在第三绝缘层上方；电极分别设置在第一背极板和第二背极板上。本发明提供的MEMS麦克风和制作方法，能够解决总谐波失真值、振膜与背极板黏粘和短路的问题。
The invention provides a MEMS microphone and a manufacturing method, comprising a substrate, a back plate, a diaphragm, an insulating layer, a supporting layer and an electrode; the back plate includes a first back plate and a second back plate, and the insulating layer includes a first The insulating layer, the second insulating layer and the third insulating layer, the supporting layer includes the first supporting layer and the second supporting layer. The first insulating layer is arranged between the base and the first back plate, and the second insulating layer is arranged above the first back plate. The first supporting layer is arranged between the second insulating layer and the diaphragm, the second supporting layer is arranged between the diaphragm and the third insulating layer, and the diaphragm is provided with a diaphragm protruding piece extending toward the direction of the second insulating layer , on the third insulating layer, there is an insulating layer protruding piece extending toward the diaphragm; the second back plate is set above the third insulating layer; the electrodes are respectively set on the first back plate and the second back plate. The MEMS microphone and the manufacturing method provided by the invention can solve the problems of the total harmonic distortion value, sticking and short circuit of the diaphragm and the back plate.
Description
技术领域technical field
本发明涉及MEMS麦克风技术领域，更为具体地，涉及一种MEMS麦克风及其制作方法。The present invention relates to the technical field of MEMS microphones, and more specifically, to a MEMS microphone and a manufacturing method thereof.
背景技术Background technique
随着社会的进步和技术的发展，近年来，手机、笔记本电脑等电子产品体积不断减小，人们对这些便携电子产品的性能要求也越来越高，从而也要求与之配套的电子零件的体积不断减小、性能和一致性不断提高。MEMS（Micro-Electro-Mechanical-System，简称MEMS）工艺集成的MEMS麦克风开始被批量应用到手机、笔记本电脑等电子产品中，其封装体积比传统的驻极体麦克风小，因此受到大部分麦克风生产商的青睐。With the progress of society and the development of technology, in recent years, the volume of electronic products such as mobile phones and notebook computers has been continuously reduced, and people's requirements for the performance of these portable electronic products are also getting higher and higher. The size continues to decrease, and the performance and consistency continue to increase. MEMS (Micro-Electro-Mechanical-System, MEMS for short) process-integrated MEMS microphones have begun to be applied in batches to electronic products such as mobile phones and notebook computers. favored by merchants.
目前，麦克风结构多为单振膜跟单背极板组合的设计，现有MEMS麦克风背极板结构有两种，一种是MEMS麦克风的振膜在下，背极板在上的结构设计；另外一种是MEMS麦克风的振膜在上，背极板在下的结构设计。At present, the structure of the microphone is mostly a combination of a single diaphragm and a single back plate. There are two types of back plate structures for existing MEMS microphones. One is the structural design of the MEMS microphone with the diaphragm on the bottom and the back plate on the top; One is a structural design in which the diaphragm of the MEMS microphone is on the top and the back plate is on the bottom.
这两种MEMS麦克风结构中，单振膜和单背极板之间设置有支撑层 ，麦克风的线性度特性低，并且MEMS麦克风的THD Value（Total HarmonicDistortion，又称为总谐波失真值）较大。In these two MEMS microphone structures, there is a support layer between the single diaphragm and the single back plate, the linearity characteristics of the microphone are low, and the THD Value (Total Harmonic Distortion, also known as the total harmonic distortion value) of the MEMS microphone is relatively high. big.
同时，振膜在自由振动时，可能会与背极板发生沾黏或者短路，从而影响声电转换的实现。At the same time, when the diaphragm vibrates freely, it may be stuck or short-circuited with the back plate, thereby affecting the realization of acoustic-electric conversion.
发明内容Contents of the invention
鉴于上述问题，本发明的目的是提供一种MEMS麦克风及其制作方法，以解决总谐波失真值、振膜与背极板黏粘和短路的问题。In view of the above problems, the object of the present invention is to provide a MEMS microphone and its manufacturing method to solve the problems of total harmonic distortion, vibrating membrane and back plate sticking and short circuit.
本发明提供一种MEMS麦克风，包括基底、背极板、振膜、绝缘层、支撑层和电极；背极板包括第一背极板和第二背极板，绝缘层包括第一绝缘层、第二绝缘层和第三绝缘层，支撑层包括第一支撑层和第二支撑层。第一绝缘层设置在基底和第一背极板之间，第二绝缘层设置在第一背极板的上方。第一支撑层设置在第二绝缘层和振膜之间，第二支撑层设置在振膜和第三绝缘层之间，其中，在振膜上设置有向第二绝缘层方向延伸的振膜突出件，在第三绝缘层上设置有向振膜方向延伸的绝缘层突出件；其中，第二背极板设置在第三绝缘层上方；电极分别设置在第一背极板和第二背极板上。The invention provides a MEMS microphone, comprising a substrate, a back plate, a diaphragm, an insulating layer, a supporting layer and an electrode; the back plate includes a first back plate and a second back plate, and the insulating layer includes a first insulating layer, The second insulating layer and the third insulating layer, the supporting layer includes the first supporting layer and the second supporting layer. The first insulating layer is arranged between the base and the first back plate, and the second insulating layer is arranged above the first back plate. The first supporting layer is arranged between the second insulating layer and the diaphragm, and the second supporting layer is arranged between the diaphragm and the third insulating layer, wherein a diaphragm extending toward the second insulating layer is arranged on the diaphragm The protruding piece is provided with an insulating layer protruding piece extending toward the diaphragm on the third insulating layer; wherein, the second back plate is set above the third insulating layer; the electrodes are respectively set on the first back plate and the second back plate plate.
此外，优选的方案是，在第一背极板和第二背极板上均设置有多个通孔；第一背极板和第二背极板上的通孔分别与第一绝缘层和第二绝缘层上的通孔一一对应。In addition, the preferred solution is that a plurality of through holes are provided on the first back plate and the second back plate; the through holes on the first back plate and the second back plate are respectively connected with the first insulating layer and the second back plate The through holes on the second insulating layer correspond one to one.
此外，优选的方案是，设置在第一支撑层和第二支撑层之间的振膜与第二绝缘层和第三绝缘层之间分别形成所述振膜振动的空气间隙。In addition, a preferred solution is that an air gap for vibration of the diaphragm is formed between the diaphragm disposed between the first supporting layer and the second supporting layer and the second insulating layer and the third insulating layer.
本发明提供一种MEMS麦克风的制作方法，包括如下步骤：The present invention provides a kind of manufacture method of MEMS microphone, comprises the steps:
通过基底热氧化，使基底的多晶硅与氧化剂发生反应生成二氧化硅作为第一绝缘层；Through the thermal oxidation of the substrate, the polysilicon of the substrate reacts with the oxidant to form silicon dioxide as the first insulating layer;
在第一绝缘层上方沉积第一背极板，并在第一背极板上蚀刻多个通孔；depositing a first back plate over the first insulating layer, and etching a plurality of through holes on the first back plate;
在第一背极板上方沉积第二绝缘层，并且在第二绝缘层形成与第一背极板上的通孔相对应的通孔；Depositing a second insulating layer over the first back plate, and forming through holes corresponding to the through holes on the first back plate in the second insulating layer;
将聚乙烯氧化物通过化学沉积的方法沉积在第二绝缘层上方作为第一支撑层，同时聚乙烯氧化物沉积填充到第一背极板的通孔和第二绝缘层的通孔内；Depositing polyethylene oxide on the second insulating layer by chemical deposition as the first supporting layer, and depositing polyethylene oxide to fill the through holes of the first back plate and the through holes of the second insulating layer;
将第一支撑层通过蚀刻的方法形成多个凹槽；forming a plurality of grooves on the first supporting layer by etching;
在第一支撑层上通过化学沉积的方法形成振膜，其中，沉积到第一支撑层的凹槽内的振膜部分形成振膜突出件；forming a diaphragm on the first support layer by chemical deposition, wherein the part of the diaphragm deposited into the groove of the first support layer forms a protrusion of the diaphragm;
通过化学沉积的方法将聚乙烯氧化物沉积在振膜上作为第二支撑层；Deposit polyethylene oxide on the diaphragm as the second support layer by chemical deposition;
在第二支撑层上蚀刻出多个凹槽；etching a plurality of grooves on the second supporting layer;
在第二支撑层上沉积第三绝缘层，其中，沉积到第二支撑层的凹槽的绝缘层部分形成绝缘层突出件；depositing a third insulating layer on the second support layer, wherein portions of the insulating layer deposited into the recesses of the second support layer form insulating layer protrusions;
在第三绝缘层上沉积第二背极板，并在第二背极板和第三绝缘层上蚀刻多个通孔；depositing a second back plate on the third insulating layer, and etching a plurality of through holes on the second back plate and the third insulating layer;
分别在第一背极板和第二背极板沉积电极。Electrodes are deposited on the first back plate and the second back plate respectively.
此外，优选的方案是，在基底和第一绝缘层上通过蚀刻形成MEMS麦克风的贯通孔。In addition, a preferred solution is to form the through hole of the MEMS microphone by etching on the substrate and the first insulating layer.
此外，优选的方案是，通过蚀刻消除支撑层中与MEMS麦克风的贯通孔相对应位置的聚乙烯氧化物，在振膜与第二绝缘层和第三绝缘层之间分别形成振膜振动的空气间隙。In addition, the preferred solution is to eliminate the polyethylene oxide in the support layer corresponding to the through hole of the MEMS microphone by etching, and form air for vibration of the diaphragm between the diaphragm and the second insulating layer and the third insulating layer, respectively. gap.
从上面的技术方案可知，本发明的MEMS麦克风及其制作方法，采用双背极板的结构，并且振膜设置在两个背极板之间，这种设计结构通过振膜与背极板距离之间的相互补偿，能够减少MEMS麦克风的线性失真，并且降低MEMS麦克风总谐波失真值；由于绝缘层的增加，能够避免振膜与背极板发生短路，同时突出件的增加，能够避免振膜与两背极板黏粘，以保证声电转换的实现。It can be seen from the above technical scheme that the MEMS microphone of the present invention and its manufacturing method adopt the structure of double back plates, and the diaphragm is arranged between the two back plates. This design structure passes the distance between the diaphragm and the back plates. The mutual compensation between the MEMS microphone can reduce the linear distortion of the MEMS microphone, and reduce the total harmonic distortion value of the MEMS microphone; due to the increase of the insulating layer, it can avoid the short circuit between the diaphragm and the back plate, and the increase of the protruding parts can avoid vibration. The film is glued to the two back plates to ensure the realization of sound-to-electricity conversion.
为了实现上述以及相关目的，本发明的一个或多个方面包括后面将详细说明并在权利要求中特别指出的特征。下面的说明以及附图详细说明了本发明的某些示例性方面。然而，这些方面指示的仅仅是可使用本发明的原理的各种方式中的一些方式。此外，本发明旨在包括所有这些方面以及它们的等同物。To the accomplishment of the above and related ends, one or more aspects of the invention comprise the features hereinafter described in detail and particularly pointed out in the claims. The following description and accompanying drawings detail certain exemplary aspects of the invention. These aspects are indicative, however, of but a few of the various ways in which the principles of the invention may be employed. Furthermore, the invention is intended to include all such aspects and their equivalents.
附图说明Description of drawings
通过参考以下结合附图的说明及权利要求书的内容，并且随着对本发明的更全面理解，本发明的其它目的及结果将更加明白及易于理解。在附图中：By referring to the following description combined with the accompanying drawings and the contents of the claims, and with a more comprehensive understanding of the present invention, other objectives and results of the present invention will be more clear and easy to understand. In the attached picture:
图1为根据本发明实施例的MEMS麦克风结构示意图；Fig. 1 is a schematic structural diagram of a MEMS microphone according to an embodiment of the present invention;
图2为根据本发明实施例的MEMS麦克风的制作方法流程图。FIG. 2 is a flow chart of a manufacturing method of a MEMS microphone according to an embodiment of the present invention.
其中的附图标记包括：基底1、第一绝缘层2、第一背极板3、第二绝缘层4、第一支撑层5、振膜6、第二支撑层7、第三绝缘层8、第二背极板9、电极10、通孔11、空气间隙12、绝缘层突出件13、振膜突出件14。The reference signs include: substrate 1, first insulating
在所有附图中相同的标号指示相似或相应的特征或功能。The same reference numerals indicate similar or corresponding features or functions throughout the drawings.
具体实施方式Detailed ways
在下面的描述中，出于说明的目的，为了提供对一个或多个实施例的全面理解，阐述了许多具体细节。然而，很明显，也可以在没有这些具体细节的情况下实现这些实施例。在其它例子中，为了便于描述一个或多个实施例，公知的结构和设备以方框图的形式示出。以下将结合附图对本发明的具体实施例进行详细描述。In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that these embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more embodiments. Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
图1为根据本发明实施例的MEMS麦克风结构示意图。如图1所示，本发明提供一种MEMS麦克风，包括基底1、背极板、振膜、绝缘层、支撑层和电极；背极板包括第一背极板3和第二背极板9；绝缘层包括第一绝缘层2、第二绝缘层3和第三绝缘层8；支撑层包括第一支撑层5和第二支撑层7。FIG. 1 is a schematic structural diagram of a MEMS microphone according to an embodiment of the present invention. As shown in Figure 1, the present invention provides a kind of MEMS microphone, comprises substrate 1, back pole plate, diaphragm, insulation layer, supporting layer and electrode; Back pole plate comprises first back pole plate 3 and second back pole plate 9 The insulating layer includes the first
从下往上的顺序依次为基底1、第一绝缘层2、第一背极板3、第二绝缘层4、第一支撑层5、振膜6、第二支撑层7、第三绝缘层8、第二背极板9和电极10。The order from bottom to top is base 1, first insulating
其中，基底1为多晶硅材料制作，在基底1的内部设置有声音进入的贯通孔，该贯通孔可以为方形的或者是圆形的，根据MEMS麦克风产品的具体要求灵活确定。Wherein, the substrate 1 is made of polysilicon material, and a through hole for sound entry is provided inside the substrate 1. The through hole can be square or circular, which can be flexibly determined according to the specific requirements of MEMS microphone products.
第一绝缘层2设置在基底1和第一背极板3之间，第二绝缘层4设置在第一背极板3的上方。其中，在第一背板3上设置有多个通孔11，第二绝缘层4也设置有多个通孔（在图1中未标出），第一背极3板的通孔11与第一绝缘层上的通孔一一对应。The first
第一支撑层5设置在第二绝缘层4和振膜6之间，第二支撑层7设置在振膜6和第三绝缘层8之间，其中，在振膜6上设置有向第二绝缘层方向延伸的振膜突出件14，在第三绝缘8上设置有振膜方向延伸的绝缘层突出件13。The first supporting layer 5 is arranged between the second insulating layer 4 and the
第二背极板9设置在第三绝缘层8上方；在第二背极板9上设置有多个通孔（未在图1中标出），第三绝缘层8也设置有多个通孔（在图1中未标出），第三绝缘层8的通孔与第二背极板9的通孔一一对应。The second back plate 9 is arranged above the third insulating layer 8; a plurality of through holes (not marked in FIG. 1 ) are arranged on the second back plate 9, and the third insulating layer 8 is also provided with a plurality of through holes (Not marked in FIG. 1 ), the through holes of the third insulating layer 8 correspond to the through holes of the second back plate 9 one by one.
设置在第一支撑层5和第二支撑层7之间的振膜6与第二绝缘层4和第三绝缘层8之间分别形成振膜振动的空气间隙12。An
用于MEMS麦克风内部电路与外部电路连通的电极分别设置在第一背极板3和第二背极板9上。Electrodes for communication between the internal circuit of the MEMS microphone and the external circuit are respectively arranged on the first back plate 3 and the second back plate 9 .
在本发明的实施例中，声音信号能够通过贯通孔，经过背极板和绝缘层的通孔11，到达空气间隙12，作用至振膜6，使振膜6产生振动，振膜2产生大幅度振动时，会碰触两个背极板，两个绝缘层的增加，避免背极板与振膜直接相连，不会发生短路现象，同时，突出件的增加，能避免背极板与振膜黏粘，从而振膜2与第一背极板6和第二背极板11一起作用产生电信号，实现声-电转换。In the embodiment of the present invention, the sound signal can pass through the through hole, pass through the through
因此，本发明提供的MEMS麦克风，采用双背极板结构，并且在背极板和振膜之间增加绝缘层，同时还增加了突出件，以避免振膜与背极板短路和黏粘。与现有技术相比，本发明简化工艺、提高了本发明所述的MEMS麦克风的性能和制造产率。Therefore, the MEMS microphone provided by the present invention adopts a double back plate structure, and an insulating layer is added between the back plate and the diaphragm, and a protrusion is also added to avoid short circuit and adhesion between the diaphragm and the back plate. Compared with the prior art, the invention simplifies the process and improves the performance and manufacturing yield of the MEMS microphone of the invention.
下面将详细描述本发明提供的MEMS麦克风的制作方法，图2示出了本发明实施例的MEMS麦克风的制作方法流程，在下面的描述中，为了清楚简明起见，大量的工艺细节，诸如设备、条件、参数等，考虑到它们为本领域中的技术人员所公知，被省略了。本发明提供的MEMS麦克风的制作方法步骤如下：The manufacturing method of the MEMS microphone provided by the present invention will be described in detail below. FIG. 2 shows the process flow of the manufacturing method of the MEMS microphone according to the embodiment of the present invention. In the following description, for the sake of clarity and conciseness, a large number of process details, such as equipment, Conditions, parameters, etc. are omitted considering that they are known to those skilled in the art. The manufacture method step of MEMS microphone provided by the invention is as follows:
S201：通过基底热氧化，使基底的多晶硅与氧化剂发生反应生成二氧化硅作为第一绝缘层。S201: Through thermal oxidation of the substrate, the polysilicon of the substrate reacts with an oxidizing agent to form silicon dioxide as a first insulating layer.
其中，基底为多晶硅材料制作而成，优选地，可以对基底层提前进行N型掺杂或P型掺杂，使表面电阻较小，但不限于此。然后，用硼离子、砷离子或磷离子等对形成的二氧化硅进行选择性离子注入，并对注入离子进行退火从而形成第一绝缘层。Wherein, the base is made of polysilicon material. Preferably, the base layer can be doped with N-type or P-type in advance to make the surface resistance smaller, but not limited thereto. Then, selective ion implantation is performed on the formed silicon dioxide with boron ions, arsenic ions or phosphorus ions, etc., and the implanted ions are annealed to form a first insulating layer.
S202：在第一绝缘层上方沉积第一背极板，并在第一背极板上蚀刻多个通孔。S202: Deposit a first back plate on the first insulating layer, and etch a plurality of through holes on the first back plate.
S203：在第一背极板上方沉积形成第二绝缘层，并且在第二绝缘层形成与第一背极板上的通孔相对应多个通孔。S203: Deposit and form a second insulating layer on the first back plate, and form a plurality of through holes corresponding to the through holes on the first back plate in the second insulating layer.
S204：将聚乙烯氧化物通过化学沉积的方法沉积在第二绝缘层上方作为第一支撑层，同时聚乙烯氧化物沉积填充到第一背极板的通孔和第二绝缘层的通孔内。S204: Deposit polyethylene oxide on the second insulating layer by chemical deposition as the first supporting layer, and simultaneously deposit polyethylene oxide to fill the through holes of the first back plate and the through holes of the second insulating layer .
S205：将第一支撑层通过光刻和蚀刻的方法形成多个凹槽。S205: forming a plurality of grooves on the first supporting layer by means of photolithography and etching.
其中，第一支撑层的凹槽的形成是为下一步骤做准备，要在第一支撑层的凹槽填充振膜以形成振膜突出件。Wherein, the formation of the grooves of the first support layer is a preparation for the next step, which is to fill the grooves of the first support layer with the diaphragm to form the protrusions of the diaphragm.
S206：在第一支撑层上通过化学沉积的方法形成振膜，其中，沉积到第一支撑层的凹槽内的振膜部分形成振膜突出件，在振膜蚀刻两个孔。S206: Form a diaphragm on the first support layer by chemical deposition, wherein the part of the diaphragm deposited into the groove of the first support layer forms a protrusion of the diaphragm, and etch two holes in the diaphragm.
其中，蚀刻两个孔，一个大孔和一个小孔。Among them, two holes are etched, a large hole and a small hole.
S207：通过化学沉积的方法将聚乙烯氧化物沉积在振膜上作为第二支撑层，同时聚乙烯氧化物沉积填充到振膜形成的大孔和小孔中；S207: Depositing polyethylene oxide on the diaphragm as a second support layer by chemical deposition, and depositing polyethylene oxide to fill the large holes and small holes formed by the diaphragm;
S208：在第二支撑层上蚀刻出多个凹槽；S208: Etching a plurality of grooves on the second supporting layer;
S209：在第二支撑层上沉积第三绝缘层，其中，沉积到第二支撑层的凹槽的绝缘层部分形成绝缘层突出件；S209: Depositing a third insulating layer on the second supporting layer, wherein the part of the insulating layer deposited to the groove of the second supporting layer forms an insulating layer protrusion;
S210：在第三绝缘层上沉积第二背极板，并在第二背极板和第三绝缘层上蚀刻多个通孔。S210: Deposit a second back plate on the third insulating layer, and etch a plurality of through holes on the second back plate and the third insulating layer.
其中，蚀刻除第二背极板和第三绝缘层外，同时还蚀刻第二支撑层、振膜、第一支撑层和第一绝缘层，蚀刻的位置为振膜有大孔的一端，并且对第二支撑层、第一支撑层和第一绝缘层与大孔的一端相对应的位置进行蚀刻，形成一个外界与第一背极板相连的孔洞。Wherein, in addition to etching the second back plate and the third insulating layer, the second supporting layer, the diaphragm, the first supporting layer and the first insulating layer are etched simultaneously, and the etching position is one end where the diaphragm has a large hole, and The positions of the second supporting layer, the first supporting layer and the first insulating layer corresponding to one end of the large hole are etched to form a hole connecting the outside with the first back plate.
S211：金通过蒸镀的方法分别在第一背极板和第二背极板沉积电极，电极用于MEMS麦克风内部电路与外部电路连通。S211: Deposit gold electrodes on the first back plate and the second back plate respectively by vapor deposition, and the electrodes are used for communication between the internal circuit of the MEMS microphone and the external circuit.
其中，由于在S210步骤中形成有孔洞，金属可以直接沉积到第一背极板上。Wherein, due to the holes formed in the step S210, the metal can be directly deposited on the first back plate.
S212：通过蚀刻在基底和第一绝缘层上通过蚀刻形成MEMS麦克风的贯通孔；通过蚀刻消除支撑层中与MEMS麦克风的贯通孔相对应位置的聚乙烯氧化物，在振膜与第二绝缘层和第三绝缘层之间分别形成振膜振动的空气间隙。S212: Form the through-hole of the MEMS microphone by etching on the base and the first insulating layer; eliminate the polyethylene oxide in the support layer corresponding to the through-hole of the MEMS microphone by etching, and connect the diaphragm and the second insulating layer An air gap for vibration of the diaphragm is formed between the third insulating layer and the third insulating layer.
上述为本发明实施例的MEMS麦克风的制作方法。从上述过程中，可以看出本发明工艺简单，有助于进一步提高本发明所述的MEMS麦克风的性能和制造产率。The above is the manufacturing method of the MEMS microphone according to the embodiment of the present invention. From the above process, it can be seen that the process of the present invention is simple, which helps to further improve the performance and manufacturing yield of the MEMS microphone of the present invention.
上述制作工艺的实施例更加细致地描述了本发明提供的双背极板结构的MEMS麦克风的生产工艺流程，在两个背极板之间设置振膜以改善单背极板结构的MEMS麦克风中振膜与背极板之间的距离变化缺陷，降低MEMS麦克风的THD值。The embodiment of the above manufacturing process has described the production process flow of the MEMS microphone with the double back plate structure provided by the present invention in more detail. A diaphragm is arranged between the two back plates to improve The defect of the distance change between the diaphragm and the back plate reduces the THD value of the MEMS microphone.
另外，在两个背极板之间设置的绝缘层能够防止第一背极板和第二背极板与振膜发生短路，避免影响声电转换的实现。In addition, the insulating layer provided between the two back plates can prevent the short circuit between the first back plate and the second back plate and the diaphragm, and avoid affecting the realization of acoustic-electric conversion.
其次，在第二绝缘层和振膜上设置的突出件，能够防止第一背极板和第二背极板与振膜发生黏粘，以保证声电转换的实现。Secondly, the protruding piece provided on the second insulating layer and the diaphragm can prevent the first back plate and the second back plate from sticking to the diaphragm, so as to ensure the realization of acoustic-electric conversion.
本发明提供的MEMS麦克风通常优选采用圆形形状，但其它形状诸如方形、长方形或其它多边形形状也是可以的。The MEMS microphones provided by the present invention are generally preferably circular in shape, but other shapes such as square, rectangular or other polygonal shapes are also possible.
通过上述实施方式可以看出，本发明提供的MEMS麦克风及其制作方法，采用双背极板的结构，并且振膜设置在两个背极板之间，这种设计结构通过振膜与背极板距离之间的相互补偿，能够减少MEMS麦克风的线性失真，并且降低MEMS麦克风总谐波失真值；并且由于绝缘层的增加，能够避免振膜与背极板发生短路，同时，增加的振膜突出件，能够避免振膜与两背极板黏粘，以保证声电转换的实现。It can be seen from the above embodiments that the MEMS microphone provided by the present invention and its manufacturing method adopt the structure of double back plates, and the diaphragm is arranged between the two back plates. The mutual compensation between the plate distance can reduce the linear distortion of the MEMS microphone and reduce the total harmonic distortion value of the MEMS microphone; and due to the increase of the insulating layer, it can avoid the short circuit between the diaphragm and the back plate, and at the same time, the increased diaphragm The protruding parts can prevent the vibrating membrane from sticking to the two back plates, so as to ensure the realization of sound-electric conversion.
如上参照附图以示例的方式描述了根据本发明提出的MEMS麦克风及其制作方法。但是，本领域技术人员应当理解，对于上述本发明所提出的MEMS麦克风及其制作方法，还可以在不脱离本发明内容的基础上做出各种改进。因此，本发明的保护范围应当由所附的权利要求书的内容确定。The MEMS microphone and its manufacturing method according to the present invention are described above by way of example with reference to the accompanying drawings. However, those skilled in the art should understand that various improvements can be made to the above-mentioned MEMS microphone and its manufacturing method proposed in the present invention without departing from the content of the present invention. Therefore, the protection scope of the present invention should be determined by the contents of the appended claims.
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