CN205355041U - Take metal lug structure of release of stress ring - Google Patents
Take metal lug structure of release of stress ring Download PDFInfo
- Publication number
- CN205355041U CN205355041U CN201620021430.6U CN201620021430U CN205355041U CN 205355041 U CN205355041 U CN 205355041U CN 201620021430 U CN201620021430 U CN 201620021430U CN 205355041 U CN205355041 U CN 205355041U
- Authority
- CN
- China
- Prior art keywords
- pad
- stress release
- groove
- release ring
- bump structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 21
- 230000008878 coupling Effects 0.000 claims description 20
- 238000010168 coupling process Methods 0.000 claims description 20
- 238000005859 coupling reaction Methods 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 8
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 2
- 239000003292 glue Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000002015 acyclic group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The utility model discloses a take metal lug structure of release of stress ring, including a basement, the basement is openly spread there is metallic wiring, and the annular groove that corresponding metallic wiring preset the pad position openly is carved with to the basement, has laid the insulating layer between metallic wiring and the basement, and metallic wiring is last to be equipped with an at least pad, and in pad peripheral part or whole extended to the recess, release of stress ring was formed with the recess to the pad part that extends to in the recess, and the pad top growth has the metal lug, and metal lug periphery does not extend to in the recess. The utility model discloses can effectively release the stress that metal lug and pad expend with heat and contract with cold produced, avoid the production of crackle, reduce the crash rate of chip metal lug structure.
Description
Technical field
This utility model relates to field of semiconductor package, particularly relates to the metal bump structure with Stress Release ring of a kind of semiconductor packaging chip.
Background technology
In typical crystal wafer chip dimension encapsulation, reroute (RDL) usually by metal and chip pad (Pads) is electrically caused chip back, and forming pad on metal reroutes, long projection on pad, such as soldered ball, metal salient point, metal column etc..From structure, projection actually includes projection itself and the Underbump metallization (UBM) between projection and pad.
Owing to the multilayer material layer of Underbump metallization (UBM) structure and projection concentrates near pad, therefore, stress also can concentrate on the region at these material places.Owing to below regular bond pads being the passivation glue as insulating barrier, this passivation glue and metal pad thermal coefficient of expansion (CTE) difference are bigger, without preventative design, when reliability thermal shock is tested, stress is excessive will cause that passivation glue cracks, and then causes the problem such as leakage current or standby current.
Summary of the invention
In order to solve above-mentioned technical problem, the utility model proposes a kind of metal bump structure with Stress Release ring, it is possible to effectively release metal coupling and pad expand with heat and contract with cold the stress produced, it is to avoid the generation of crackle, reduce the crash rate of die metal bumps structure.
The technical solution of the utility model is achieved in that
A kind of metal bump structure with Stress Release ring, including a substrate, described substrate front surface is covered with metallic circuit, described substrate front surface is carved with corresponding described metallic circuit presets the annular groove of pad locations, it is equipped with insulating barrier between described metallic circuit and described substrate, described metallic circuit is provided with at least one pad, and described pad peripheral extends partially or entirely to described groove, the pad portion extended in described groove forms a Stress Release ring with described groove, long on described pad have metal coupling, and described metal coupling periphery does not extend in described groove.
Further, the perpendicular shape in sidewall opposed substrate surface of described groove or inclined shape or stepped.
Further, the degree of depth of described groove is 3～20 μm.
Further, the width between inner ring and the outer ring of described groove is more than 15 μm.
Further, the outer ring bore being smaller in size than Stress Release ring of described pad.
Further, the inner ring of described groove is or/and the generally circular in shape or regular polygon of outer ring.
Further, described metallic circuit being equipped with solder mask, described solder mask is provided with opening in pad locations, and described metal coupling is positioned at the opening part of described solder mask.
Further, described pad peripheral extends on the inner ring sidewall of described groove or extends in the middle part of the bottom land of described groove.
The beneficial effects of the utility model are: this utility model provides a kind of metal bump structure with Stress Release ring, by etching annular recess in the chip base peripheral in the position of long metal coupling, and pad is caused in groove, form Stress Release ring, can effectively discharge due to metal coupling and pad expand with heat and contract with cold produce stress, the generation of Crack prevention, reduces the crash rate of die metal bumps structure.
Accompanying drawing explanation
Fig. 1 is this utility model pad peripheral profile when extending to recess sidewall；
Fig. 2 is this utility model pad peripheral profile when extending in the middle part of groove bottom land；
Fig. 3 is this utility model pad peripheral profile when extending partially in groove；
Fig. 4 is the structural representation carving annular groove in this utility model in substrate；
Fig. 5 is the top view after this utility model is laid metallic circuit in substrate and formed pad；
Fig. 6 is the top view after this utility model is laid metallic circuit in substrate and formed pad, and the outer ring of its annular recess is octagon；
In conjunction with accompanying drawing, make the following instructions:
1-substrate, 2-metallic circuit, 3-groove, 301-inner ring, 302-outer ring 4-insulating barrier, 5-pad, 6-metal coupling, 7-solder mask, 8-opening.
Detailed description of the invention
For enabling this utility model more understandable, below in conjunction with accompanying drawing, detailed description of the invention of the present utility model is described in detail.For convenience of description, in the structure of embodiment accompanying drawing, each ingredient does not press normal rates convergent-divergent, therefore does not represent the actual relative size of each structure in embodiment.Wherein described structure or the above or upside in face, comprise the middle situation also having other layers.
Such as Fig. 1, Fig. 2, shown in Fig. 3, a kind of metal bump structure with Stress Release ring, including a substrate 1, described substrate front surface is covered with metallic circuit 2, described substrate front surface is carved with corresponding described metallic circuit presets the annular groove 3 of pad locations, insulating barrier 4 it is equipped with between described metallic circuit and described substrate, described metallic circuit is provided with at least one pad 5, and described pad peripheral extends partially or entirely to described groove, the pad portion extended in described groove forms a Stress Release ring with described groove, long on described pad have metal coupling 6, and described metal coupling periphery does not extend in described groove.So, by etching annular recess in the chip base peripheral in the position of long metal coupling, and pad is caused in groove, form Stress Release ring, can effectively discharge due to metal coupling and pad expand with heat and contract with cold produce stress, the generation of Crack prevention, reduces the crash rate of die metal bumps structure.
Preferably, the perpendicular shape in sidewall opposed substrate surface of described groove or inclined shape or stepped.
Preferably, the degree of depth of described groove is 3～20 μm.
Preferably, the width between inner ring and the outer ring of described groove is more than 15 μm.
Preferably, the outer ring bore being smaller in size than Stress Release ring of described pad.
Preferably, the inner ring 301 of described groove is or/and the generally circular in shape or regular polygon of outer ring 302.Referring to Fig. 1, Fig. 2 and Fig. 3, wherein the inner ring of Stress Release ring and the shape of outer ring are both designed as circle, and in other embodiments, referring to Fig. 6, the shape of its inner ring and outer ring can be also regular polygon, it is possible to reach the effect of release metal coupling stress.
Preferably, described metallic circuit being equipped with solder mask 7, described solder mask is provided with opening 8 in pad locations, and described metal coupling is positioned at the opening part of described solder mask.
Preferably, described pad peripheral extends on the inner ring sidewall of described groove or extends in the middle part of the bottom land of described groove.
The preparation method of this utility model metal bump structure with Stress Release ring is as follows:
First, referring to Fig. 4, the substrate of chip is preset and around the pad locations place of metallic circuit, carves annular groove, recess sidewall vertical (such as Fig. 4) or tilt (as shown in Figure 1, Figure 2 and Fig. 3) or stepped (not shown), depth of groove scope 3～20 μm, width between groove inner ring and outer ring is more than 15 μm, and this annular groove has be sized according to the pad size preset and metal coupling size.
Then, laying a layer insulating at the upper surface of substrate with annular groove, this insulating barrier covers annular groove.
Then, referring to Fig. 5, lay metallic circuit on the insulating layer, and on metallic circuit, form default some pads；This metallic circuit connects the weld pad of electronic component in chip or the extension conductive structure of weld pad.Require the outer ring bore being smaller in size than annular groove of pad, and more than the inner ring bore of annular groove, when being embodied as, pad edge can be made to extend to the sidewall of annular groove, as shown in Figure 1, it is possible to make pad edge extend in the middle part of the bottom land of annular groove, as shown in Figure 2.Pad edge part can certainly be made to extend in annular groove, as shown in Figure 3.Annular groove constitutes Stress Release ring with extending into its interior pad edge.Under normal circumstances, acyclic structure insulating layer equivalent stress occurs in pad and insulating barrier contact position, and after this utility model has Stress Release ring, insulating barrier maximum equivalent will appear in groove step lower edge and is greatly reduced.
Finally, metallic circuit is laid one layer of solder mask, opening is formed in each pad locations of solder mask, and on the pad of opening part long metal coupling, and metal coupling periphery does not extend in groove, namely the bottom surface of metal coupling and contact pads fully falls within the scope of the inner ring of Stress Release ring, referring to Fig. 1, Fig. 2 and Fig. 3.
Above example is with reference to accompanying drawing, and preferred embodiment of the present utility model is described in detail.Those skilled in the art by carrying out amendment on various forms or change to above-described embodiment, but when without departing substantially from essence of the present utility model, all drops within protection domain of the present utility model.
Claims (8)
1. the metal bump structure with Stress Release ring, it is characterized in that: include a substrate (1), described substrate front surface is covered with metallic circuit (2), described substrate front surface is carved with corresponding described metallic circuit presets the annular groove (3) of pad locations, insulating barrier (4) it is equipped with between described metallic circuit and described substrate, described metallic circuit is provided with at least one pad (5), and described pad peripheral extends partially or entirely to described groove, the pad portion extended in described groove forms a Stress Release ring with described groove, long on described pad have metal coupling (6), and described metal coupling periphery does not extend in described groove.
2. the metal bump structure with Stress Release ring according to claim 1, it is characterised in that: the perpendicular shape in sidewall opposed substrate surface of described groove or inclined shape or stepped.
3. the metal bump structure with Stress Release ring according to claim 1, it is characterised in that the degree of depth of described groove is 3～20 μm.
4. the metal bump structure with Stress Release ring according to claim 1, it is characterised in that the width between inner ring and the outer ring of described groove is more than 15 μm.
5. the metal bump structure with Stress Release ring according to claim 1, it is characterised in that the outer ring bore being smaller in size than Stress Release ring of described pad.
6. the metal bump structure with Stress Release ring according to claim 1, it is characterised in that the inner ring (301) of described groove is or/and the generally circular in shape or regular polygon of outer ring (302).
7. the metal bump structure with Stress Release ring according to claim 1, it is characterized in that, being equipped with solder mask (7) on described metallic circuit, described solder mask is provided with opening (8) in pad locations, and described metal coupling is positioned at the opening part of described solder mask.
8. the metal bump structure with Stress Release ring according to claim 1, it is characterised in that described pad peripheral extends on the inner ring sidewall of described groove or extends in the middle part of the bottom land of described groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620021430.6U CN205355041U (en) | 2016-01-11 | 2016-01-11 | Take metal lug structure of release of stress ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620021430.6U CN205355041U (en) | 2016-01-11 | 2016-01-11 | Take metal lug structure of release of stress ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205355041U true CN205355041U (en) | 2016-06-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620021430.6U Expired - Fee Related CN205355041U (en) | 2016-01-11 | 2016-01-11 | Take metal lug structure of release of stress ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205355041U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564878A (en) * | 2017-08-15 | 2018-01-09 | 华天科技（昆山）电子有限公司 | The enhanced encapsulating structure of salient point |
| WO2018192016A1 (en) * | 2017-04-21 | 2018-10-25 | 北京大学 | Silicon island array structure for increasing fatigue life of solder ball, and flip chip packaging method |
| CN118315270A (en) * | 2024-06-07 | 2024-07-09 | 北京大学 | Chip substrate, preparation method thereof and functional chip |
-
2016
- 2016-01-11 CN CN201620021430.6U patent/CN205355041U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018192016A1 (en) * | 2017-04-21 | 2018-10-25 | 北京大学 | Silicon island array structure for increasing fatigue life of solder ball, and flip chip packaging method |
| CN107564878A (en) * | 2017-08-15 | 2018-01-09 | 华天科技（昆山）电子有限公司 | The enhanced encapsulating structure of salient point |
| CN118315270A (en) * | 2024-06-07 | 2024-07-09 | 北京大学 | Chip substrate, preparation method thereof and functional chip |
| CN118315270B (en) * | 2024-06-07 | 2024-08-23 | 北京大学 | Chip substrate and preparation method thereof, and functional chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160629 Termination date: 20200111 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |