CN202841076U - High fundamental frequency quartz-crystal resonator - Google Patents
High fundamental frequency quartz-crystal resonator Download PDFInfo
- Publication number
- CN202841076U CN202841076U CN 201220494552 CN201220494552U CN202841076U CN 202841076 U CN202841076 U CN 202841076U CN 201220494552 CN201220494552 CN 201220494552 CN 201220494552 U CN201220494552 U CN 201220494552U CN 202841076 U CN202841076 U CN 202841076U
- Authority
- CN
- China
- Prior art keywords
- wafer
- crystal resonator
- thickness
- support
- fundamental frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 13
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 26
- 238000000034 method Methods 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The utility model relates to a high fundamental frequency quartz-crystal resonator, which comprises an insulating base, a bracket, a wafer and a shell, wherein plug pins, which are electrically connected with the bracket, are fixed on the lower end of the insulating base, the bracket is provided with clamping holes for fixing the wafer, the wafer is of a square shape and the thickness thereof is 0.05-0.08mm, a blind hole shaped circular groove is symmetrically arranged in a center area at two sides of the wafer so as to enable the bottom part of the groove to form an oscillation area. According to the utility model, the oscillation area with a thickness of 6-27mum is formed at the center of the wafer, thereby enabling the oscillation frequency to be improved to 60-255MHz, being capable of meeting requirements of the high fundamental frequency quart-crystal resonator, and having the advantages of small equivalent series impedance and great Ts value.
Description
Technical field
The utility model relates to a kind of high base frequency quartz crystal resonator.
Background technology
Quartz-crystal resonator is the frequency device of a kind of high accuracy and high stability, is called as the heart of digital circuit.Its basic comprising is: a quartz wafer, the metallizing rete is connected on the lead-in wire by leader tape on each electrode as electrode on two corresponding surfaces in wafer centre position, adds package casing and forms.
The main performance of quartz crystal determines by wafer, and its frequency determines by the thickness of wafer, and (AT pellet, frequency=1660/ wafer thickness) is inversely proportional to wafer thickness.Traditional quartz wafer is planar structure, and main machining method is mechanical two-sided lapping.Because processing technology and die strength, frequency range is generally at 1～40MHz(wafer thickness 0.04mm), the highest 60MHz(wafer thickness 0.027mm that also can only reach).Along with electronic circuit miniaturization, high frequency, increasing occasion need to be used the above quartz crystal of 60MHz, therefore traditional wafer can't satisfy high fundamental frequency product requirement.
Summary of the invention
The purpose of this utility model is for the deficiencies in the prior art, and a kind of high base frequency quartz crystal resonator is provided, and frequency of oscillation can be increased to more than the 60MHz.
The utility model has adopted following technical scheme: comprise insulator foot, support, wafer, shell, the insulator foot lower end is fixed with the pin that is electrically connected with support, have the clamping hole of fixed wafer on the support, described wafer is square, its thickness is 0.05～0.08mm, the both sides of wafers zone line is symmetrical arranged and is blind hole shape circular groove, so that bottom portion of groove forms the vibration zone, two diagonal angles of wafer are fixed on the support by clamping hole.
Above-mentioned vibration zone can form by ion etching method, the thickness in vibration zone can be machined to 6～27 μ m with the method processing, so that frequency of oscillation can be increased to 60～255MHz.
The diameter in above-mentioned vibration zone can be 2.5mm.
The utility model forms by ion etching method can form thickness in the vibration zone of 6～27 μ m in the middle of wafer, so that frequency of oscillation can be increased to 60～255MHz, can satisfy the needs of high base frequency quartz crystal resonator, and have advantages of that equivalent series resistance is little and the Ts value is large, can satisfy electronic circuit low consumpting power and adjustability requirement.
Description of drawings
Fig. 1 is the utility model structural representation.
Fig. 2 be among Fig. 1 wafer along A-A line cutaway view.
Embodiment
By shown in Figure 1, the utility model comprises insulator foot 1, support 2, wafer 3, shell 5, insulator foot 1 lower end is fixed with the pin 4 that is electrically connected with support 2, have the clamping hole 21 of fixed wafer 3 on the support 2, wafer 3 is square, every edge lengths is 5.0mm, and its thickness is 0.05～0.08mm, and two diagonal angles of wafer 3 are fixed on two side stands 2 by clamping hole 21.Fig. 1 housing 5 is in last encapsulation state.
Chip architecture as shown in Figure 2, the both sides of wafers zone line is symmetrical arranged and is blind hole shape circular groove 33, so that bottom portion of groove forms vibration zone 31.The diameter in this vibration zone 31 is 2.5mm, and thickness is 6～27 μ m.This vibration zone is by adopting ion etching method to form in both sides of wafers.Be square matrix 32 around the vibration zone 31.
Claims (3)
1. high base frequency quartz crystal resonator, comprise insulator foot (1), support (2), wafer (3), shell (5), insulator foot (1) lower end is fixed with the pin (4) that is electrically connected with support (2), have the clamping hole (21) of fixed wafer (3) on the support (2), it is characterized in that: described wafer (3) is square, its thickness is 0.05～0.08mm, wafer (3) both sides zone line is symmetrical arranged and is blind hole shape circular groove (33), so that vibration zone (31) is formed on groove (33) bottom, two diagonal angles of wafer (3) are fixed on the support (2) by clamping hole (21).
2. high base frequency quartz crystal resonator according to claim 1 is characterized in that: the thickness in vibration zone (31) is 6～27 μ m.
3. high base frequency quartz crystal resonator according to claim 1 is characterized in that: the diameter in vibration zone (31) is 2.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220494552 CN202841076U (en) | 2012-09-25 | 2012-09-25 | High fundamental frequency quartz-crystal resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220494552 CN202841076U (en) | 2012-09-25 | 2012-09-25 | High fundamental frequency quartz-crystal resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202841076U true CN202841076U (en) | 2013-03-27 |
Family
ID=47952671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220494552 Expired - Fee Related CN202841076U (en) | 2012-09-25 | 2012-09-25 | High fundamental frequency quartz-crystal resonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202841076U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105958957A (en) * | 2016-04-27 | 2016-09-21 | 北京无线电计量测试研究所 | Crystal resonator and preparation method thereof |
-
2012
- 2012-09-25 CN CN 201220494552 patent/CN202841076U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105958957A (en) * | 2016-04-27 | 2016-09-21 | 北京无线电计量测试研究所 | Crystal resonator and preparation method thereof |
| CN105958957B (en) * | 2016-04-27 | 2018-07-17 | 北京无线电计量测试研究所 | A kind of crystal resonator and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102047563B1 (en) | Coil component and and board for mounting the same | |
| TWI556362B (en) | Substrate embedding passive element | |
| TW200841368A (en) | Capacitor with improved volumetric efficiency and reduced cost | |
| JP5007677B2 (en) | Solid electrolytic capacitor and manufacturing method thereof | |
| US20130241684A1 (en) | Method for manufacturing common mode filter and common mode filter | |
| JP2017168621A (en) | Solid electrolytic capacitor and method for manufacturing the same | |
| CN202841073U (en) | High fundamental frequency quartz-crystal resonator | |
| KR20160092265A (en) | Coil component and and board for mounting the same | |
| CN205283813U (en) | A kind of MEMS microphone chip and MEMS microphone | |
| CN202841076U (en) | High fundamental frequency quartz-crystal resonator | |
| CN202841074U (en) | High fundamental frequency quartz-crystal resonator | |
| JP2008140976A (en) | Chip-shaped solid electrolytic capacitor | |
| CN107910313B (en) | A novel semiconductor packaging structure, packaging method and electronic product | |
| CN202906850U (en) | SMD type high frequency quartz crystal resonator | |
| CN102867615A (en) | Low Profile High Power Inductors | |
| CN106409808A (en) | Three-dimensional spiral inductor | |
| TWM624678U (en) | Integrated circuitry of speaker | |
| JP5376134B2 (en) | Solid electrolytic capacitor | |
| JP5201684B2 (en) | Chip type solid electrolytic capacitor | |
| TW202111742A (en) | Inductive component and the fabrication method thereof | |
| CN203661007U (en) | An all-metal-packaged quartz crystal resonator pad | |
| CN110400786A (en) | A leadless packaged semiconductor product and its processing method | |
| CN216437459U (en) | Integrated circuit of loudspeaker | |
| CN102158786A (en) | Electret condenser microphone | |
| CN220545201U (en) | Inductance based on printed circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130327 Termination date: 20160925 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |