[go: up one dir, main page]

CN105958957A - Crystal resonator and preparation method thereof - Google Patents

Crystal resonator and preparation method thereof Download PDF

Info

Publication number
CN105958957A
CN105958957A CN201610269246.8A CN201610269246A CN105958957A CN 105958957 A CN105958957 A CN 105958957A CN 201610269246 A CN201610269246 A CN 201610269246A CN 105958957 A CN105958957 A CN 105958957A
Authority
CN
China
Prior art keywords
wafer
crystal
crystal oscillation
fixing device
bottom electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610269246.8A
Other languages
Chinese (zh)
Other versions
CN105958957B (en
Inventor
崔巍
潘立虎
叶林
周伟平
郑文强
王作羽
刘小光
哈斯图亚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Institute of Radio Metrology and Measurement
Original Assignee
Beijing Institute of Radio Metrology and Measurement
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Institute of Radio Metrology and Measurement filed Critical Beijing Institute of Radio Metrology and Measurement
Priority to CN201610269246.8A priority Critical patent/CN105958957B/en
Publication of CN105958957A publication Critical patent/CN105958957A/en
Application granted granted Critical
Publication of CN105958957B publication Critical patent/CN105958957B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

The invention discloses a crystal resonator and preparation method thereof. The crystal resonator comprises a crystal oscillation wafer and a fixing device wherein the edge of the crystal oscillation wafer is provided with a structure block for crystal wafer positioning, and the fixing device is provided with a wafer positioning notch matching the structure block for crystal wafer positioning. Through the placement of the structure block for crystal wafer positioning into the wafer positioning notch, a connection between the crystal oscillation wafer and the fixing device can be realized. Compared to the prior art, the crystal resonator of the invention is added by a structure block for crystal wafer positioning in a crystal oscillation wafer and a wafer positioning notch matching the structure block on a fixed device correspondingly. With the positioning notch, the crystal oscillation wafer and the fixing device can be connected so as to solve the problem that the workability of the crystal resonator is relatively low due to the stress generated on the crystal oscillation wafer by the adhesion effect of the conductive adhesive when the crystal oscillation wafer is fixed with the base through the use of conductive adhesive in the prior art.

Description

A kind of crystal resonator and preparation method thereof
Technical field
The present invention relates to electronic technology field, particularly relate to a kind of crystal resonator and preparation method thereof.
Background technology
At present, owing to quartz-crystal resonator can provide stable clock signal, therefore can be applied to In a lot of fields, such as, computer, space flight, satellite fix, TV, radio etc. all utilize quartz-crystal Body resonator provides clock signal.
Conventional quartz-crystal resonator comprises the parts such as quartz crystal oscillation chip, pedestal and shell, wherein, Quartz crystal oscillation chip is connected by conducting resinl with pedestal, i.e. by smearing on quartz oscillation chip Quartz crystal oscillation chip is fixed on pedestal by conducting resinl.
The operation principle of quartz-crystal resonator is that the piezoelectric effect utilizing quartz crystal realizes, pressure here Electrical effect specifically refers to: use mechanical means (stretch, compression etc.) to produce on quartz crystal oscillation chip Mechanical strain, so that crystals produces polarization phenomena;In turn, it is also possible to by crystal Electric field is added, so that produce mechanical strain on quartz crystal oscillation chip in polarised direction.
Quartz crystal oscillation chip is carried out the method being connected, operation step by prior art with pedestal by conducting resinl The most relatively simple, it is convenient really to bring to user.But, when conducting resinl by adhesive attraction by quartz-crystal When oscillation body wafer is connected with pedestal, in the adhesive attraction of conducting resinl can be formed on quartz crystal oscillation chip Stress, and this internal stress can affect the piezoelectric effect of quartz crystal oscillation chip, causes the frequency of oscillation of wafer Change;It addition, the adhesive attraction of conducting resinl the most also can form stress on pedestal, so that should Pedestal generation stress deformation, quartz crystal oscillation chip, because wanting recovery stress deformation, can be produced by this pedestal Stress effect, also can make the frequency of oscillation of wafer change, reduce the service behaviour of crystal resonator.
Summary of the invention
In view of the above problems, the invention provides a kind of crystal resonator, be used for solving prior art utilizes Crystal oscillation wafer is connected by conducting resinl with pedestal, causes relatively low the asking of service behaviour of crystal resonator Topic.
A kind of crystal resonator, including: crystal oscillation wafer and fixing device, wherein:
It is provided with wafer orientation block structure on the edge of described crystal oscillation wafer, described fixing device is arranged Have and the wafer orientation breach of described crystal location structure Block-matching, by described wafer orientation block structure is put It is placed in described wafer orientation breach, it is achieved being connected between described crystal oscillation wafer and described fixing device.
Preferably, the quantity of described crystal location structure block is four, and described four crystal location structure blocks Laid respectively in two vertical direction in the described crystal oscillation wafer center of circle.
Preferably, described crystal location structure block be shaped as trapezium structure, and the going to the bottom of described trapezium structure It is connected with described crystal oscillation Waffer edge.
Preferably, going to the bottom of described trapezium structure is connected with described crystal oscillation Waffer edge, wherein, and linking The edge angle of the most corresponding described crystal oscillation wafer is more than or equal to 5 degree, and less than or equal to 45 degree.
Preferably, described fixing device includes: upper electrode and bottom electrode, wherein:
Described upper electrode, for suppressing described crystal oscillation wafer in described bottom electrode;
Described bottom electrode, is used for carrying described crystal oscillation wafer.
Preferably, described bottom electrode is provided with wafer orientation breach, and the most described upper electrode is by described crystal oscillation Wafer is suppressed and is specifically included on described bottom electrode:
Crystal location structure block in described crystal oscillation wafer is suppressed in described bottom electrode by described upper electrode In wafer orientation breach in.
Preferably, described upper electrode is provided with electrode locating notch, and described bottom electrode is provided with lower electricity Pole positioning step, the linking corresponding with described upper electrode locating notch of described bottom electrode positioning step.
Preferably, the linking corresponding with described upper electrode locating notch of described bottom electrode positioning step specifically includes:
Utilize positioning fixture that described bottom electrode positioning step and described upper electrode locating notch are fixed rank Connect.
Preferably, described fixing device also includes pedestal, and is drawn by the electrode of described pedestal with described upper electrode Go out end to be connected.
A kind of preparation method of crystal resonator, including:
According to default size, crystalline material is processed, obtains crystal oscillation wafer, described crystal oscillation Wafer orientation block structure it is provided with on the edge of wafer;
Described crystal oscillation wafer is connected with fixing device, wherein, described fixing device is provided with With the wafer orientation breach of described crystal location structure Block-matching, by by described wafer orientation block structure place In described wafer orientation breach, it is achieved being connected between described crystal oscillation wafer and described fixing device.
The invention provides a kind of crystal resonator, this crystal resonator includes crystal oscillation wafer and fixing dress Put, wherein, the edge of this crystal oscillation wafer is provided with wafer orientation block structure, this fixing device sets It is equipped with and the wafer orientation breach of this crystal location structure Block-matching, by this wafer orientation block structure is placed In this wafer orientation breach, it is achieved being connected between this crystal oscillation wafer and fixing device.The present invention carries Crystal oscillation wafer in the crystal resonator of confession, compared to crystal oscillation wafer of the prior art, increases Wafer orientation block structure, and the most correspondingly devise wafer orientation breach, utilize this crystalline substance Body location structure block and this wafer orientation breach, it is achieved that being connected between crystal oscillation wafer and fixing device, Solve prior art when utilizing conducting resinl crystal oscillation wafer and pedestal to be fixed, due to the adhesion of conducting resinl Act on the stress produced on crystal oscillation wafer and cause relatively low the asking of service behaviour of crystal resonator Topic.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes the part of the present invention, The schematic description and description of the present invention is used for explaining the present invention, is not intended that the improper limit to the present invention Fixed.In the accompanying drawings:
The structural representation of the crystal oscillation wafer a kind of of the prior art that Fig. 1 provides for the present invention;
The structural representation of the crystal resonator a kind of of the prior art that Fig. 2 provides for the present invention;
The structural representation of the positive oscillation chip of a kind of crystal that Fig. 3 provides for the present invention;
The structural representation of the positive oscillation chip of a kind of crystal that Fig. 4 provides for the present invention;
The structural representation of a kind of crystal resonator that Fig. 5 provides for the present invention;
The structural representation of the fixing device in a kind of crystal resonator that Fig. 6 provides for the present invention;
A kind of schematic flow sheet making wafer resonator that Fig. 7 provides for the present invention.
Detailed description of the invention
Stated in the background, the operation principle of quartz-crystal resonator is mainly by the pressure of quartz crystal Electrical effect, piezoelectric effect here had both included direct piezoelectric effect and reversed piezoelcetric effect.Specifically, positive piezoelectricity Effect refers to: crystal when being produced stress deformation by the effect of external force along certain direction, this crystal Inside will produce polarization phenomena, on two relative surfaces of crystal, form positive and negative contrary electric charge simultaneously; When the external force in effect with crystal disappears, this crystal will recover uncharged state.Reversed piezoelcetric effect refers to: When in polarised direction to the additional polarizing electric field of crystal so that this crystal deforms upon;When this polarized electric field During disappearance, this crystal will recover deformation.
It follows that give the effect applying power on the crystal in crystal resonator, it will affect crystal resonator Service behaviour, and when the quartz crystal oscillation chip that prior art is in fixed resonator and fixing device, Generally utilize conducting resinl to be adhered to each other with fixing device by quartz crystal oscillation chip, be illustrated in figure 1 mesh Front normally used crystal oscillation wafer, Fig. 2 show prior art and crystal oscillation wafer is fixed on pedestal Schematic diagram, wherein: 110 is crystal oscillation wafer, 120 is pedestal, and 130 is fixing crystal oscillation wafer 110 with the stationary fixture of pedestal 120,140 be conducting resinl, is used for crystal oscillation wafer 110 and pedestal 120 secure adhesion.
Adhesive attraction power due to conducting resinl 140 can produce the effect of additional stress to crystal oscillation wafer 110, It addition, conducting resinl 140 the most also can produce the effect of additional stress to pedestal 120 so that pedestal 120 Raw stress deformation, because substrate 120 to recover this stress deformation, will produce again crystal oscillation wafer 110 One stress effect.And this two additional stresses effect produced reduces the service behaviour of crystal resonator.Separately Outward, because conducting resinl 140 is coated directly on wafer oscillation chip 110, so can be to crystal oscillation wafer 110 Pollute, so, accelerate the aging speed of crystal oscillation wafer 110, i.e. shortened crystal resonator Life-span.
For the problems referred to above, the invention provides a kind of crystal resonator.For making the purpose of the present invention, technology Scheme and advantage are clearer, below in conjunction with the specific embodiment of the invention and corresponding accompanying drawing to skill of the present invention Art scheme is clearly and completely described.Obviously, described embodiment is only that a part of the present invention is implemented Example rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not having Have and make the every other embodiment obtained under creative work premise, broadly fall into the scope of protection of the invention.
Below in conjunction with accompanying drawing, describe the technical scheme that the present invention provides in detail.
The invention provides a kind of crystal resonator, specifically include: crystal oscillation wafer and fixing device, its In, the edge of described crystal oscillation wafer is provided with wafer orientation block structure, described fixing device is arranged Have and the wafer orientation breach of described crystal location structure Block-matching, by described wafer orientation block structure is put It is placed in described wafer orientation breach, it is achieved being connected between described crystal oscillation wafer and described fixing device.
Specifically, the structure of the crystal oscillation wafer that the present invention provides is as it is shown on figure 3, compared to prior art In crystal oscillation chip architecture 110, the edge of crystal oscillation wafer 210 that the present invention provides is provided with crystalline substance Sheet location structure block 211, the effect of this wafer orientation block structure 211 is: by crystal oscillation wafer 210 with Fixing device is connected.
In actual applications, the quantity of this wafer orientation block structure 211 is two or more, but in order to Crystal oscillation wafer 210 is more firmly fixed, the fixing crystalline substance of four wafer orientation block structures 211 can be used Oscillation body wafer 210, and these four wafer orientation block structures 211 are positioned at the two of this crystal oscillation wafer 210 In individual vertical direction.
Be illustrated in figure 4 have four wafer orientation block structures 211 (wafer orientation block structure A, B, C and D) crystal oscillation wafer 210, wherein, the wafer orientation knot in these four wafer orientation block structures 211 Line between line between building block A and C, and wafer orientation block structure B and D, all crosses crystal The center of circle of oscillation chip 210, and this two line is mutually perpendicular to.So purpose of design is: four crystal are fixed The fixing crystal oscillation wafer 210 that bit architecture block 211 can equalize so that crystal oscillation wafer 210 is with solid Determine device to be more firmly connected.
And, the shape of the wafer orientation block structure 211 that the present invention provides has a variety of, such as, and Fig. 4 institute Being shaped as of the crystal location structure block 211 shown is trapezoidal, and this trapezoidal crystal location structure block go to the bottom with The edge junction of crystal oscillation wafer 210.And the edge angle of the corresponding crystal oscillation wafer 210 of linking part is big In equal to 5 degree, and less than or equal to 45 degree.
As the θ angle in Fig. 4 is: being connected between crystal location structure block 211 and crystal oscillation wafer 210 The edge angle of the corresponding crystal oscillation wafer 210 of part.Above-mentioned linking part correspondence crystal oscillation wafer 210 Edge angle is designed to the reason more than or equal to 5 degree: if less than 5 degree, may cause crystal location structure Block 211 cannot stably fix crystal oscillation wafer 210;Above-mentioned linking part correspondence crystal oscillation wafer 210 The reason that is designed to less than or equal to 45 degree of edge angle be: if greater than 45 degree, other may be brought negative Impact, reason is: crystal location structure block 211 here is for being connected with fixing device, i.e. brilliant The size of body location structure block 211 has only to allow crystal oscillation wafer 210 fix with fixing device, as Really crystal location structure block 211 design is too big, and crystal oscillation wafer can be hindered to do mechanical vibration, thus shadow Ring the frequency of oscillation of crystal resonator.
Fig. 4 is the structure of exemplary explanation crystal oscillation wafer 210, and in actual applications, wafer is fixed The number of bit architecture block 211, wafer orientation block structure 211 at the distributing position of crystal oscillation wafer 210, And the shapes and sizes of wafer orientation block structure 211, all can be adjusted according to actual needs, such as, Use three wafer orientation block structures 211 can also realize crystal oscillation wafer 210 etc. is relatively firmly fixed Deng.
Compared to crystal oscillation wafer (such as Fig. 1) of the prior art, the crystal oscillation wafer that the present invention provides Shape there occurs change, correspondingly, the fixing device of fixing crystal oscillation wafer also will change, and have Body ground, is designed with the wafer mated with the wafer orientation block structure in crystal oscillation wafer fixed on the securing means Position breach, by the wafer orientation block structure in crystal oscillation wafer is positioned in this wafer orientation breach, Thus realize being connected between this crystal oscillation wafer and fixing device.
The fixing device that the present invention provides also has a variety of, the most exemplary explanation one of which fixing device, Specific as follows:
The structure of the fixing device that the present invention provides is as it is shown in figure 5, specifically include: upper electrode 410 and lower electricity Pole 420, wherein: described upper electrode 410, for suppressing described crystal oscillation wafer in described bottom electrode On;Described bottom electrode 420, is used for carrying described crystal oscillation wafer.
Equally, the design of upper electrode 410 and bottom electrode 420 also has a variety of, such as, in one In embodiment, this bottom electrode 420 is provided with wafer orientation breach, then goes up electrode by crystal location structure Block 211 is suppressed in the crystal locating notch in this bottom electrode.
In another embodiment, bottom electrode 420 is provided with bottom electrode positioning step, and upper electrode 410 sets It is equipped with electrode locating notch, the linking corresponding with upper electrode locating notch of bottom electrode positioning step.Specifically, In order to stably make bottom electrode positioning step be connected with upper electrode locating notch, it is possible to use under positioning fixture is incited somebody to action Electrode is fixing with upper electrode locating notch etc..
In another embodiment, bottom electrode 420 had both included wafer orientation breach, included again lower electricity Pole positioning step, correspondingly, upper electrode 410 includes the upper electrode being mutually linked with bottom electrode positioning step Locating notch.
It addition, upper electrode 410 and bottom electrode 420 must also meet the principle of conduction, therefore can power on It is provided with upper electrode metal film on pole 410, and on bottom electrode 420, is provided with bottom electrode metal film.
Below by the structure of explanation bottom electrode 420 exemplary for Fig. 5, this bottom electrode 420 specifically includes: Bottom electrode substrate 421, bottom electrode positioning step 422, bottom electrode wafer orientation breach 423, bottom electrode substrate Film groove 424 and bottom electrode metal film 425, wherein, bottom electrode substrate 421 is used for carrying crystal oscillation wafer 210, bottom electrode positioning step 422 is connected for the locating notch of the upper electrode with upper electrode 410, lower electricity Pole wafer orientation breach 423 is used for disposing the wafer orientation block structure 211 in crystal oscillation wafer 210, under Electrode substrate film groove 424 makees the part of oscillating movement, bottom electrode gold for disposing in crystal oscillation wafer 210 Belong to film 425 to be used for conducting electricity.
Three of the above embodiment is exemplary explanation above electrode 410 and the structure of bottom electrode 420, in reality In the application of border, according to the crystal oscillation chip architecture of design, correspondingly design for fixing this crystal oscillation The fixing device of wafer, is not the most construed as limiting the structure of fixing device.
After crystal oscillation wafer 210 is fixed by electrode 410 and bottom electrode 420 on utilizing, base can be added Seat, this pedestal is used for carrying this crystal oscillation wafer and upper and lower electrode.Specifically, can use for dispensing glue The electrode leads to client of upper electrode 410 is connected by mode with pedestal, and wherein, particular location for dispensing glue meets support The requirement of wafer;Upper electrode 410 uses with pedestal point glue mode be connected here, prior art can be avoided In when utilizing conducting resinl directly crystal oscillation wafer and pedestal to be fixed, owing to the adhesive attraction of conducting resinl causes The problem that the service behaviour of crystal resonator is relatively low.
After the making completing crystal resonator, this crystal resonator is added peripheral circuit, when giving peripheral electricity In road after galvanization, electric current is passed to crystal oscillation wafer by the upper and lower pole in crystal resonator, forms electric field, Thus excite crystal oscillation wafer to produce mechanical vibration.
Correspondingly, present invention also offers the preparation method of a kind of crystal resonator, the method includes:
According to default size, crystalline material is processed, obtains crystal oscillation wafer, described crystal oscillation Wafer orientation block structure it is provided with on the edge of wafer;Described crystal oscillation wafer is held in the mouth with fixing device Connect, wherein, described fixing device be provided with and the wafer orientation breach of described crystal location structure Block-matching, By described wafer orientation block structure is positioned in described wafer orientation breach, it is achieved described crystal oscillation is brilliant Being connected between sheet with described fixing device.
Preparation process in this crystal resonator in detail will be illustrated below, specific make step such as figure Shown in 7, including:
Step S501: prepare crystal oscillation wafer.
Specifically, quartz crystal materials is entered as requested in terms of angle, size, thickness and radian etc. Row cutting, grind and the operation such as polishing, to be cut complete after, quartz crystal oscillation chip is put into culture dish In stand-by.
Step S502: prepare crystal location structure block.
Specifically, the structure of the quartz wafer after cutting according to step S501, design and this quartz wafer The crystal location structure block joined, can position crystal according to dimensional requirement here in the way of using cut Block structure is processed, it is thus achieved that have the crystal oscillation wafer of wafer orientation block structure, and by this crystal oscillation Wafer is put in culture dish stand-by.
Step S503: clean crystal oscillation wafer and fixing device.
In step, the first step: add cleanout fluid in the culture dish equipped with crystal oscillation wafer, and put into Supersonic cleaning machine carries out ultrasonic cleaning, during cleaning a length of 1~2min, or sets the most voluntarily Determine scavenging period;Second step: supersonic cleaning machine to be used, by after crystal oscillation wafer cleaning, places into electric furnace On be heated to after cleanout fluid comes to life, turning off furnace power, making crystal oscillation wafer natural cooling;3rd Step: outwelled by the cleanout fluid in culture dish, containing acid flux material in usual cleanout fluid, at this moment can use hydrogen Other basic solvent such as sodium hydroxide solution cleans the surface of crystal oscillation wafer, to the acid flux material in cleanout fluid It is neutralized;4th step: with the pure water after boiling to electroded crystal oscillation wafer and fixing device (on Electrode, bottom electrode and pedestal) it is rinsed, then, then and fix crystal oscillation wafer with dehydrated alcohol Device is dehydrated, and finally, electricity consumption baking oven is done.
Step S504: crystal oscillation wafer and fixing device are mounted to crystal resonator.
In step, first, crystal oscillation wafer after cleaning and fixing device are positioned over to be easy to pick and place On position, wear the fingerstall upper and lower electrode of taking-up and put in culture dish, and take out crystal oscillation with clean tweezers Wafer is put in bottom electrode, specifically, the wafer orientation block structure in crystal oscillation wafer is placed on lower electricity In the wafer orientation breach of pole;Then, electrode upper electrode is placed on the upper of crystal oscillation wafer in taking-up Side so that the positioning step in bottom electrode is placed in the locating notch in electrode so that upper and lower electrode Go between parallel but misaligned, and utilize positioning fixture to be fixed with bottom electrode by the locating notch of upper electrode;Finally, Loading pedestal, the electrode leads to client of pole that specifically can make to power on is connected with the support in pedestal, and in junction Point glue processes.
After crystal oscillation wafer is fixed with fixing device, the crystal resonator fixed is put in baking oven Carry out baking process so that the connection of whole crystal resonator is more firm.
The preparation process of above-mentioned crystal oscillator is exemplary explanation, in actual applications, according to design The structure of crystal oscillator can adjust the preparation method of crystal oscillator, the system to crystal oscillator here Preparation Method is not especially limited.
The invention provides a kind of crystal resonator, this crystal resonator includes crystal oscillation wafer and fixing dress Put, wherein, the edge of this crystal oscillation wafer is provided with wafer orientation block structure, this fixing device sets It is equipped with and the wafer orientation breach of this crystal location structure Block-matching, by this wafer orientation block structure is placed In this wafer orientation breach, it is achieved being connected between this crystal oscillation wafer and fixing device.The present invention carries Crystal oscillation wafer in the crystal resonator of confession, compared to crystal oscillation wafer of the prior art, increases Wafer orientation block structure, and the most correspondingly devise wafer orientation breach, utilize this crystalline substance Body location structure block and this wafer orientation breach, it is achieved that being connected between crystal oscillation wafer and fixing device, Solve prior art when utilizing conducting resinl crystal oscillation wafer and pedestal to be fixed, due to the adhesion of conducting resinl Act on the stress produced on crystal oscillation wafer and cause relatively low the asking of service behaviour of crystal resonator Topic.
The foregoing is only embodiments of the invention, be not limited to the present invention.For this area skill For art personnel, the present invention can have various modifications and variations.All institutes within spirit and principles of the present invention Any modification, equivalent substitution and improvement etc. made, within should be included in scope of the presently claimed invention.

Claims (10)

1. a crystal resonator, it is characterised in that including:
Crystal oscillation wafer and fixing device, wherein:
It is provided with wafer orientation block structure on the edge of described crystal oscillation wafer, described fixing device is arranged Have and the wafer orientation breach of described crystal location structure Block-matching, by described wafer orientation block structure is put It is placed in described wafer orientation breach, it is achieved being connected between described crystal oscillation wafer and described fixing device.
Crystal resonator the most according to claim 1, it is characterised in that described crystal location structure The quantity of block is four, and described four crystal location structure blocks laid respectively at described crystal oscillation wafer circle In two vertical direction of the heart.
Crystal resonator the most according to claim 1, it is characterised in that described crystal location structure Block be shaped as trapezium structure, and going to the bottom of described trapezium structure is connected with described crystal oscillation Waffer edge.
Crystal resonator the most according to claim 3, it is characterised in that under described trapezium structure The end, is connected with described crystal oscillation Waffer edge, wherein, and the limit of the linking corresponding described crystal oscillation wafer of part Edge angle is more than or equal to 5 degree, and less than or equal to 45 degree.
Crystal resonator the most according to claim 1, it is characterised in that described fixing device includes: Upper electrode and bottom electrode, wherein:
Described upper electrode, for suppressing described crystal oscillation wafer in described bottom electrode;
Described bottom electrode, is used for carrying described crystal oscillation wafer.
Crystal resonator the most according to claim 5, it is characterised in that described bottom electrode is provided with Wafer orientation breach, described crystal oscillation wafer is suppressed and is specifically wrapped on described bottom electrode by the most described upper electrode Include:
Crystal location structure block in described crystal oscillation wafer is suppressed in described bottom electrode by described upper electrode In wafer orientation breach in.
Crystal resonator the most according to claim 5, it is characterised in that described upper electrode is provided with Upper electrode locating notch, and described bottom electrode is provided with bottom electrode positioning step, described bottom electrode positioning table Rank linking corresponding with described upper electrode locating notch.
Crystal resonator the most according to claim 7, it is characterised in that described bottom electrode positioning table Rank linking corresponding with described upper electrode locating notch specifically includes:
Utilize positioning fixture that described bottom electrode positioning step and described upper electrode locating notch are fixed rank Connect.
9. according to the crystal resonator described in any one of claim 1~8, it is characterised in that described fixing Device also includes pedestal, and is connected by the electrode leads to client of described pedestal with described upper electrode.
10. the preparation method of a crystal resonator, it is characterised in that including:
According to default size, crystalline material is processed, obtains crystal oscillation wafer, described crystal oscillation Wafer orientation block structure it is provided with on the edge of wafer;
Described crystal oscillation wafer is connected with fixing device, wherein, described fixing device is provided with With the wafer orientation breach of described crystal location structure Block-matching, by by described wafer orientation block structure place In described wafer orientation breach, it is achieved being connected between described crystal oscillation wafer and described fixing device.
CN201610269246.8A 2016-04-27 2016-04-27 A kind of crystal resonator and preparation method thereof Active CN105958957B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610269246.8A CN105958957B (en) 2016-04-27 2016-04-27 A kind of crystal resonator and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610269246.8A CN105958957B (en) 2016-04-27 2016-04-27 A kind of crystal resonator and preparation method thereof

Publications (2)

Publication Number Publication Date
CN105958957A true CN105958957A (en) 2016-09-21
CN105958957B CN105958957B (en) 2018-07-17

Family

ID=56915748

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610269246.8A Active CN105958957B (en) 2016-04-27 2016-04-27 A kind of crystal resonator and preparation method thereof

Country Status (1)

Country Link
CN (1) CN105958957B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1326266A (en) * 2000-05-26 2001-12-12 威廉·比华 Surface mount quartz crystal resonator and manufacturing method
US20090195126A1 (en) * 2008-02-06 2009-08-06 Nihon Dempa Kogyo Co., Ltd. Crystal unit
CN202841076U (en) * 2012-09-25 2013-03-27 铜陵晶越电子有限公司 High fundamental frequency quartz-crystal resonator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1326266A (en) * 2000-05-26 2001-12-12 威廉·比华 Surface mount quartz crystal resonator and manufacturing method
US20090195126A1 (en) * 2008-02-06 2009-08-06 Nihon Dempa Kogyo Co., Ltd. Crystal unit
CN202841076U (en) * 2012-09-25 2013-03-27 铜陵晶越电子有限公司 High fundamental frequency quartz-crystal resonator

Also Published As

Publication number Publication date
CN105958957B (en) 2018-07-17

Similar Documents

Publication Publication Date Title
CN101867080B (en) Bulk silicon micro mechanic resonator and manufacturing method thereof
CN103400797B (en) With the preparation method of the Semiconductor substrate of cavity
KR101661361B1 (en) Composite substrate, and elastic surface wave filter and resonator using the same
JP2003017967A (en) Surface acoustic wave element and its manufacturing method
KR20160037898A (en) Composite board and method for making same
JPWO2008129989A1 (en) Substrate holding mechanism and substrate assembling apparatus having the same
CN109450401A (en) Flexible unitary lamb wave resonator and forming method thereof
TW201004740A (en) Wafer, wafer polishing apparatus, wafer polishing method, method of fabricating piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus and radiowave timepiece
WO2020132997A1 (en) Single crystal piezoelectric thin film bulk acoustic wave resonator and forming method therefor
CN109831173B (en) Single crystal piezoelectric film bulk acoustic resonator and method of forming the same
CN104551871B (en) A grinding method for lithium tantalate wafer
CN106357154A (en) Multi-arm coupled collision piezoelectric energy collection device
CN105958957A (en) Crystal resonator and preparation method thereof
WO2020220599A1 (en) Batch transfer head and processing method therefor
CN106787938B (en) An annular traveling wave ultrasonic motor with welding process
US11747905B2 (en) Display apparatus
WO2023035400A1 (en) Lamb wave resonator and manufacturing method therefor
CN105729251B (en) A kind of ferroelectric material method of surface finish based on additional asymmetric electric field
CN109065508B (en) Ultrathin wafer with reverse mesa composite structure and preparation method thereof
CN211605172U (en) Fixing device for preventing silicon wafer from being plated in winding manner and graphite boat
CN106533250A (en) Ultrasonic motor of multi-stator planar array structure
EP3704735A1 (en) Method for manufacturing a film on a flexible sheet
TW200923471A (en) Method for thinning a display panel
CN206370784U (en) An ultrasonic motor with multi-stator planar array structure
TW201248950A (en) Wafer, method of manufacturing package, and piezoelectric oscillator

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant