CN1941427A - Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface - Google Patents
Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface Download PDFInfo
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- CN1941427A CN1941427A CNA2005101052625A CN200510105262A CN1941427A CN 1941427 A CN1941427 A CN 1941427A CN A2005101052625 A CNA2005101052625 A CN A2005101052625A CN 200510105262 A CN200510105262 A CN 200510105262A CN 1941427 A CN1941427 A CN 1941427A
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- Prior art keywords
- layer
- gaas
- gallium arsenide
- window layer
- type
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 24
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract 24
- MCIPPDNFOOHAFD-UHFFFAOYSA-N S.[Zn+2].[Se-2].[SeH2] Chemical compound S.[Zn+2].[Se-2].[SeH2] MCIPPDNFOOHAFD-UHFFFAOYSA-N 0.000 claims abstract 7
- 238000002834 transmittance Methods 0.000 claims abstract 7
- 239000010931 gold Substances 0.000 claims abstract 4
- 229910052737 gold Inorganic materials 0.000 claims abstract 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract 2
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 claims abstract 2
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract 2
- 239000010936 titanium Substances 0.000 claims abstract 2
- 229910052719 titanium Inorganic materials 0.000 claims abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 8
- 238000000407 epitaxy Methods 0.000 claims 1
- BTTOHACVRWMHOB-UHFFFAOYSA-N [Zn].[Se].[S] Chemical compound [Zn].[Se].[S] BTTOHACVRWMHOB-UHFFFAOYSA-N 0.000 abstract description 15
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 21
- 239000006117 anti-reflective coating Substances 0.000 description 7
- 230000003471 anti-radiation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
一种n+/p型砷化镓太阳电池表面高透射率窗口层锌硒硫的制备方法，包括如下步骤：以p型砷化镓或锗单晶片为衬底；利用金属有机化合物气相沉积法、分子束外延生长技术，生长n+/p型太阳电池外延片，外延至顶电池的发射区层；在发射区层上外延一层锌硒硫材料作为窗口层；在窗口层上外延高掺杂的砷化镓帽子层，完成电池外延片的制备；在外延片的上面蒸镀金锗镍/金正电极，在外延片底层高掺杂的砷化镓上面制作钛/金背电极；腐蚀帽子层、合金、蒸镀减反射膜、腐蚀台面、对电池组件进行封装，安装聚光装置、冷却装置及对日跟踪装置，完成电池的制作。A method for preparing a high-transmittance window layer zinc-selenide-sulfur on the surface of an n + /p-type gallium arsenide solar cell, comprising the following steps: using a p-type gallium arsenide or germanium single wafer as a substrate; utilizing a metal organic compound vapor phase deposition method , Molecular beam epitaxy growth technology, grow n + /p type solar cell epitaxial wafer, epitaxial to the emitter layer of the top cell; epitaxially layer a layer of zinc selenium sulfur material on the emitter layer as the window layer; epitaxially highly doped on the window layer Doped gallium arsenide cap layer to complete the preparation of the battery epitaxial wafer; evaporate gold germanium nickel/gold positive electrode on the epitaxial wafer, and make titanium/gold back electrode on the highly doped gallium arsenide at the bottom of the epitaxial wafer; corrode the cap layer , alloys, vapor-deposited anti-reflection film, corroded table tops, packaged battery components, installed light-concentrating devices, cooling devices, and sun-tracking devices to complete the production of batteries.
Description
Technical field
A kind of technical field of semiconductors that belongs to of the present invention is meant a kind of n especially
+/ p type GaAs solar battery surface high-transmission rate Window layer zinc selenium sulfur (ZnSe
0.944S
0.056) the preparation method.
Background technology
In the photoelectron technology field, AlGaAs alloy material and AlGaAs/GaAs heterostructure have all been carried out deep research; At photovoltaic cell field, Al
0.8Ga
0.2The As layer has also been carried on the back generally as the Window layer of GaAs battery and has been adopted.Al wherein
0.8Ga
0.2The band gap of As is about 2.1eV, and most of sunlight can see through, but because band gap is wide inadequately, also can absorb a part of high-energy photon, causes the current loss of GaAs battery to reach about 10%; In addition, its compensation of being with mainly occurs in conduction band, is the diffuse in reverse direction of restriction light induced electron, thereby only is fit to do p type Window layer and its easy oxidation.Therefore, seek novel, suitable Window layer material, improve the collection rate of light induced electron, be the difficult problem that the GaAs battery is badly in need of solution always.
ZnSe has many incomparable advantages as a kind of novel Window layer.At first, the band gap width of ZnSe is 2.67eV, much larger than the band gap of GaAs Window layer material (GaInP, AlGaAs, AlInP etc.), thereby greatly reduces absorption to high-energy photon.Secondly, the compensation of being with of ZnSe and GaAs can occur in valence-band edge.Therefore, ZnSe is fit to do the Window layer of n type GaAs, at n
+In the GaAs solar cell of/p structure, form diffuse in reverse direction potential barrier, and help collection light induced electron to photohole.This structure is than p
+The GaAs solar cell of/n structure can be obtained higher conversion efficiency and better anti-radiation performance.Once more, the refractive index of ZnSe is 2.6-2.8, and variations in refractive index is little under the high temperature, has the effect of antireflective coating, but or double as meet the high refractive index layer of antireflective coating.But the lattice constant of ZnSe is 0.567nm, with the lattice mismatch rate of GaAs and GaInP be 0.23%, when epitaxial growth, can produce a large amount of defectives, form effective complex centre, reduce the performance of battery each side.For addressing this problem, the S of employing 5.6% replaces the zinc selenium sulfur (ZnSe of Se
0.944S
0.056) material, can adjust lattice constant, make it to mate fully with the lattice of GaAs and GaInP material.
At zinc selenium sulfur (ZnSe
0.944S
0.056) the serial advantage of material, a kind of n of the present invention
+/ p type GaAs solar battery surface high-transmission rate Window layer zinc selenium sulfur (ZnSe
0.944S
0.056) the preparation method, and extension goes out to have the solar cell epitaxial wafer of this novel Window layer material, is aided with beam condensing unit again, this invention all has great importance for collection rate, anti-radiation performance and the photoelectric conversion efficiency etc. that improve light induced electron.
Summary of the invention
The objective of the invention is to, a kind of n is provided
+/ p type GaAs solar battery surface high-transmission rate Window layer zinc selenium sulfur (ZnSe
0.944S
0.056) the preparation method.This have a novel Window layer zinc selenium sulfur (ZnSe
0.944S
0.056) n of material
+/ p type GaAs solar cell is than p
+The GaAs solar cell of/n structure can be obtained higher conversion efficiency and better anti-radiation performance.In addition, adopt zinc selenium sulfur (ZnSe
0.944S
0.056) novel Window layer material, not only greatly reduce the absorption to high-energy photon, the collection that has improved light induced electron, overcome the bigger shortcoming of traditional GaAs battery current loss, it is about 10% to reduce the loss of electric current, and zinc selenium sulfur (ZnSe
0.944S
0.056But) high refractive index layer of double as antireflective coating, and and GaAs and GaInP material between lattice mate fully.This invention provides the feasibility technology of a kind of high electric current, high-photoelectric transformation efficiency, strong radiation resistance for photovoltaic generating system.
The present invention
Embodiment
For further specifying concrete technology contents of the present invention, describe a kind of n in detail below in conjunction with embodiment
+/ p type GaAs solar battery surface high-transmission rate Window layer zinc selenium sulfur (ZnSe
0.944S
0.056) the preparation method, it is characterized in that, comprise the steps:
Step 1: with p p type gallium arensidep or single germanium wafer is substrate; With the GaAs single-chip is substrate, and its band gap and Spectral matching, absorption coefficient height, the temperature stabilization performance is good, anti-radiation performance is good, and does not have the problem on epitaxial loayer and the reverse farmland of substrate interface, and technological requirement is comparatively simple; But compare with monocrystalline GaAs material, the mechanical strength of Ge substrate is higher, weight is lighter, anti-radiation performance and GaAs are suitable, and price is about 30% of monocrystalline GaAs material, this to attenuate solar cell thickness, alleviate solar cell weight, reduce battery material, cost consumption, raising solar module power/weight ratio, improve battery mechanical strength and aspects such as reliability, raising battery production all very strong;
Step 2: utilize metal organic chemical compound vapor deposition method, molecular beam epitaxial growth technology, growth n
+/ p type solar cell epitaxial wafer is extended down to the emitter layer of top battery outward;
Step 3: extension one deck zinc selenium sulfur (ZnSe on emitter layer
0.944S
0.056) material is as Window layer, wherein temperature is controlled between 600-800 ℃, and pressure is controlled between the 300-300Pa; This novel Window layer zinc selenium sulfur (ZnSe
0.944S
0.056) material, not only greatly reduce the absorption to high-energy photon, the collection that has improved light induced electron, overcome the bigger shortcoming of traditional GaAs battery current loss, it is about 10% to have reduced the loss of electric current, and zinc selenium sulfur (ZnSe
0.944S
0.056But) high refractive index layer of double as antireflective coating, with SiO
2Constitute the composite double layer antireflective coating, the anti-reflective effect that can on the scope of wide range territory, realize ideal; In addition, ZnSe
0.944S
0.056Lattice mates fully between material and GaAs and the GaInP material, can avoid not producing a large amount of defectives because of lattice matches.
Step 4: the highly doped GaAs cap layer of extension on Window layer, finish the preparation of battery epitaxial wafer; Window layer heavy doping improves the transformation efficiency and the power output of device in order to reduce series resistance;
Step 5: evaporation AuGeNi/Au positive electrode on epitaxial wafer, the epitaxial wafer bottom highly doped GaAs above make the Ti/Au back electrode, form ohmic contact;
Step 6: corrode cap layer, alloy, evaporation antireflective coating, etched mesa, battery component is encapsulated, installation beam condensing unit, cooling device reach the day tracking means, finish the making of battery; Wherein beam condensing unit employing refraction type Fresnel Lenses, light concentrating times are 2-1000 times, are being lower than under the 100 optically focused conditions, adopt the natural cooling mode, under greater than 100 times of optically focused conditions, adopt air-cooled or water-cooled, and beam condensing unit is one dimension or two-dimensional tracking.
Wherein the structure of battery epitaxial wafer is to be the unijunction or the multijunction solar cell of substrate with p type GaAs or Ge single-chip, as n
+/ p type unijunction is with GaAs/GaAs (GaAs/GaAs), GaAs/germanium (GaAs/Ge), or binode gallium indium phosphorus/GaAs/GaAs (GaInP/GaAs/GaAs), gallium indium phosphorus/GaAs/germanium (GaInP/GaAs/Ge), or three knot gallium indium phosphorus/GaAs/germanium/germanium (GaInP/GaAs/Ge/Ge).
Realize the best way of invention
1. realize the capital equipment of invention:
MOCVD, MBE equipment;
Photoetching equipment;
Sputtering system;
Vacuum evaporation apparatus;
Device package equipment.
Embodiment 1
(1): with GaAs (GaAs) or germanium (Ge) single-chip is substrate;
(2): utilize metal organic chemical compound vapor deposition method (MOCVD), molecular beam epitaxy (MBE) growing technology, growth n
+/ p type solar cell epitaxial wafer is extended down to the emitter layer of top battery outward;
(3): extension one deck zinc selenium sulfur (ZnSe on emitter layer
0.944S
0.056) material is as Window layer, wherein temperature is controlled at 600 ℃, and pressure is controlled at 300Pa; Argon gas is taken Zn steam and H as carrier gas
2Se/H
2S gas enters the settling chamber, and the flow of carrier gas is strict controlled in 0.5L/min.
(4): the highly doped GaAs cap layer of extension on Window layer, finish the preparation of battery epitaxial wafer;
(5): evaporation AuGeNi/Au positive electrode on epitaxial wafer, the epitaxial wafer bottom highly doped GaAs above make the Ti/Au back electrode, form ohmic contact;
(6): corrode cap layer, alloy, evaporation antireflective coating, etched mesa, battery component is encapsulated, installation beam condensing unit, cooling device reach the day tracking means, finish the making of battery; Wherein beam condensing unit employing refraction type Fresnel Lenses, light concentrating times are 2-1000 times, are being lower than under the 100 optically focused conditions, adopt the natural cooling mode, under greater than 100 times of optically focused conditions, adopt air-cooled or water-cooled, and beam condensing unit is one dimension or two-dimensional tracking.
Embodiment 2
The step of the step of present embodiment 2 and embodiment 1 is identical, and difference is, step (3): extension one deck zinc selenium sulfur (ZnSe on emitter layer
0.944S
0.056) material is as Window layer, wherein temperature is controlled at 800 ℃, and pressure is controlled at 500Pa; Argon gas is taken Zn steam and H as carrier gas
2Se/H
2S gas enters the settling chamber, and the flow of carrier gas is strict controlled in 2.5L/min.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005101052625A CN1941427A (en) | 2005-09-28 | 2005-09-28 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005101052625A CN1941427A (en) | 2005-09-28 | 2005-09-28 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1941427A true CN1941427A (en) | 2007-04-04 |
Family
ID=37959366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005101052625A Pending CN1941427A (en) | 2005-09-28 | 2005-09-28 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1941427A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752457B (en) * | 2008-12-18 | 2011-11-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and equipment for manufacturing solar battery |
| CN101624725B (en) * | 2008-07-09 | 2012-01-04 | 中国科学院半导体研究所 | Molecular beam epitaxial method for growing non-antiphase domain gallium arsenide film on germanium substrate |
| CN102593229A (en) * | 2011-01-11 | 2012-07-18 | 朱忻 | Multi-junction solar cell and manufacturing method thereof |
| CN102881736A (en) * | 2012-10-12 | 2013-01-16 | 天津三安光电有限公司 | Compound semiconductor solar cell |
| CN104576776A (en) * | 2014-12-29 | 2015-04-29 | 瑞德兴阳新能源技术有限公司 | GaAs solar cell with selectively grown contact layer and preparation method thereof |
| CN105762227A (en) * | 2014-12-19 | 2016-07-13 | 天津恒电空间电源有限公司 | Method for forming passivated edges for gallium arsenide solar cell |
| CN106449790A (en) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | Graphene/gallium arsenide solar cell |
| CN106784068A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院微电子研究所 | Graphene/gallium arsenide solar cell |
-
2005
- 2005-09-28 CN CNA2005101052625A patent/CN1941427A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101624725B (en) * | 2008-07-09 | 2012-01-04 | 中国科学院半导体研究所 | Molecular beam epitaxial method for growing non-antiphase domain gallium arsenide film on germanium substrate |
| CN101752457B (en) * | 2008-12-18 | 2011-11-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and equipment for manufacturing solar battery |
| CN102593229A (en) * | 2011-01-11 | 2012-07-18 | 朱忻 | Multi-junction solar cell and manufacturing method thereof |
| CN102881736A (en) * | 2012-10-12 | 2013-01-16 | 天津三安光电有限公司 | Compound semiconductor solar cell |
| CN102881736B (en) * | 2012-10-12 | 2015-12-16 | 天津三安光电有限公司 | A kind of compound semiconductor solar cell |
| CN105762227A (en) * | 2014-12-19 | 2016-07-13 | 天津恒电空间电源有限公司 | Method for forming passivated edges for gallium arsenide solar cell |
| CN104576776A (en) * | 2014-12-29 | 2015-04-29 | 瑞德兴阳新能源技术有限公司 | GaAs solar cell with selectively grown contact layer and preparation method thereof |
| CN106449790A (en) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | Graphene/gallium arsenide solar cell |
| CN106784068A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院微电子研究所 | Graphene/gallium arsenide solar cell |
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