[go: up one dir, main page]

CN102881736A - Compound semiconductor solar cell - Google Patents

Compound semiconductor solar cell Download PDF

Info

Publication number
CN102881736A
CN102881736A CN2012103842642A CN201210384264A CN102881736A CN 102881736 A CN102881736 A CN 102881736A CN 2012103842642 A CN2012103842642 A CN 2012103842642A CN 201210384264 A CN201210384264 A CN 201210384264A CN 102881736 A CN102881736 A CN 102881736A
Authority
CN
China
Prior art keywords
ohmic contact
contact layer
solar cell
compound semiconductor
semiconductor solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2012103842642A
Other languages
Chinese (zh)
Other versions
CN102881736B (en
Inventor
宋明辉
林桂江
丁杰
刘建庆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Sanan Optoelectronics Co Ltd
Original Assignee
Tianjin Sanan Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Sanan Optoelectronics Co Ltd filed Critical Tianjin Sanan Optoelectronics Co Ltd
Priority to CN201210384264.2A priority Critical patent/CN102881736B/en
Publication of CN102881736A publication Critical patent/CN102881736A/en
Priority to PCT/CN2013/083908 priority patent/WO2014056395A1/en
Application granted granted Critical
Publication of CN102881736B publication Critical patent/CN102881736B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种化合物半导体太阳能电池，其特征在于：在电池欧姆接触叠层内插入一隧穿结，从而改变欧姆接触层表面的导电类型。对于本发明所公开的外延结构，其欧姆接触层内插入的隧穿结厚度较薄，将不会导致电池外延成本的有效增加；另一方面电池欧姆接触层表面导电类型的改变，将使得可以选用较为廉价的金属用于制作电池芯片电极，即在保证电池性能的前提下，有效降低了太阳能电池的生产成本。

Figure 201210384264

The invention discloses a compound semiconductor solar cell, which is characterized in that a tunnel junction is inserted into the ohmic contact layer of the cell, thereby changing the conductivity type of the surface of the ohmic contact layer. For the epitaxial structure disclosed in the present invention, the thickness of the tunnel junction inserted in the ohmic contact layer is relatively thin, which will not lead to an effective increase in the cost of cell epitaxy; on the other hand, the change of the surface conductivity type of the ohmic contact layer of the battery will make it possible to Selecting relatively cheap metals for the production of battery chip electrodes effectively reduces the production cost of solar cells on the premise of ensuring battery performance.

Figure 201210384264

Description

A kind of compound semiconductor solar cell
Technical field
The invention belongs to the compound semiconductor area of solar cell, be specifically related to a kind of compound semiconductor solar cell.
Background technology
In the last few years, along with the further aggravation of energy crisis and ecological degeneration, developing novel renewable and clean energy resource had become people's production, life, kept the active demand of social sustainable development.Develop in recent years solar energy, photovoltaic power generation technology has attracted people's common concern, wherein the compound semiconductor solar cell reduces the space with its higher conversion efficiency and larger cost of electricity-generating, is acknowledged as the Ground Application generation technology of tool potentiality.Yet the solar cell power generation technology has too high cost of electricity-generating, hampers the quick commercialization process of this technology always.
Generally, at p-type Ge or GaAs Grown battery epitaxial loayer, the battery surface ohmic contact layer will be N-shaped GaAs layer, therefore in solar battery chip manufacturing process, usually need to use the noble metals such as AuGe, Au, Pt as metal electrode, obtaining preferably ohmic contact characteristic and lower series resistance, and then be conducive to improve the conversion efficiency of battery.For example, N-shaped GaAs and AuGeNi(are greater than 150nm)/the about 20nm of Au() can form preferably ohmic contact through after the short annealing.
Summary of the invention
The object of the present invention is to provide a kind of compound semiconductor solar cell, under the prerequisite that guarantees battery performance, can use comparatively cheap metal as the metal electrode of battery chip, thereby reduce the battery production cost.
According to a first aspect of the invention, a kind of compound semiconductor solar cell comprises a substrate, the battery active layer, the ohmic contact lamination is characterized in that: insert a tunnel junctions in the described ohmic contact lamination, thereby change the conduction type of ohmic contact stack surface.
Further, described ohmic contact lamination is comprised of the first ohmic contact layer, the second ohmic contact layer, the 3rd ohmic contact layer and the 4th ohmic contact layer, wherein the second ohmic contact layer and the 3rd ohmic contact layer consist of tunnel junctions jointly, the first ohmic contact layer is consistent with the second ohmic contact layer conduction type, and the 3rd ohmic contact layer is consistent with the 4th ohmic contact layer conduction type.
Among the present invention, in the battery of common p-type Ge or GaAs Grown, by in ohmic contact layer, inserting a tunnel junctions, thereby change the conduction type on ohmic contact layer surface, be that the ohmic contact layer surface is p-type electric-conducting, the metal of P type semiconductor electric conducting material and lower cost is processed through short annealing can obtain better ohmic contact, such as p-type GaAs and Ti(＜20nm)/about 20nm of Au() can obtain preferably ohmic contact and lower contact resistance through after the short annealing, thereby solved in the conventional solar cell chip manufacturing process and needed to use AuGe, Au, the noble metals such as Pt have reduced the battery electrode cost as metal electrode.
According to a second aspect of the invention, the present invention also provides a kind of solar energy luminous system, and it is equipped with the aforesaid compound semiconductor solar cell.
Other features and advantages of the present invention will be set forth in the following description, and, partly from specification, become apparent, perhaps understand by implementing the present invention.Purpose of the present invention and other advantages can realize and obtain by specifically noted structure in specification, claims and accompanying drawing.
Description of drawings
Fig. 1 is the full structure of GaInP/GaAs/Ge three junction batteries on the conventional p-type Ge substrate.
Fig. 2 is the full structure of GaInP/GaAs/Ge three junction batteries on the p-type Ge substrate provided by the present invention.
Each label represents among the figure:
The full structure of GaInP/GaAs/Ge three junction batteries on the 100:p type Ge substrate
101:n type GaAs ohmic contact layer
The 102:AuGeNi/Au metal electrode
201:n type GaAs the first ohmic contact layer
202:n+ type GaAs the second ohmic contact layer
203:p+ type GaAs the 3rd ohmic contact layer
204:p type GaAs the 4th ohmic contact layer
The 205:Ti/Au metal electrode.
Embodiment
The invention will be further described below in conjunction with embodiment.
In existing chemical combination half semiconductor solar cell, usually with the p-type material as growth substrates, such as p-type Ge substrate, p-type GaAs substrate or p-type InP substrate.Take the GaInP/GaAs/Ge three-joint solar cell as example, be generally the full structure 100 of extension formation GaInP/GaAs/Ge three junction batteries on p-type Ge substrate such as it, continue afterwards extension and form N-shaped GaAs ohmic contact layer 101, its doping content is 5 * 10 18/ cm 3, GaInP/GaAs/Ge three junction battery epitaxial structures on the p-type Ge substrate of final acquisition routine.In battery chip manufacturing process on N-shaped GaAs ohmic contact layer 101 evaporation AuGeNi/Au metal electrode 102, through 380 ℃, battery obtains good ohmic contact behind 3 minutes the rapid thermal annealing, its resistivity is 2.2 * 10 -5, the battery fill factor, curve factor is about 85%, and its side sectional view is as shown in Figure 1.
In aforementioned existing chemical combination half semiconductor solar cell epitaxial structure, its ohmic contact layer 101 is N-shaped GaAs, and in the chip processing procedure, need to adopt and use expensive metal A uGeNi/Au as the contacting metal electrode, the thickness of getting AuGeNi is 180nm, the 20nm of gold, and then solar cell is stated in evaporation one stokehold in process of production, AuGeNi, Au(20nm) metal consumption be respectively 5.1g, 1g, its cost is higher.
In aforesaid compound semiconductor solar cell epitaxial structure, the cost of metal electrode is high in the chip processing procedure, the below proposes a kind of new solar battery structure, it is under the prerequisite that guarantees battery performance, can use comparatively cheap metal as the metal electrode of battery chip, thereby reduce the battery production cost.
As shown in Figure 2, extension forms the full structure 100 of GaInP/GaAs/Ge three junction batteries on p-type Ge substrate, continue afterwards extension and form successively N-shaped GaAs the first ohmic contact layer 201, n+ type GaAs the second ohmic contact layer 202, p+ type GaAs the 3rd ohmic contact layer 203, with p-type GaAs the 4th ohmic contact layer 204, finally obtain the full structure of GaInP/GaAs/Ge three junction batteries on the p-type Ge substrate provided by the present invention.Wherein, n+ type GaAs the second ohmic contact layer 202 and p+ type GaAs the 3rd ohmic contact layer 203 common formation GaAs tunnel junctions have 150A/cm 2Peak value tunnelling current density.Particularly, the doping content of the first ohmic contact layer 201 is 2 * 10 18/ cm 3, the doping content of the second ohmic contact layer 202 is 8 * 10 18/ cm 3, the doping content of the 3rd ohmic contact layer 203 is 3 * 10 19/ cm 3, the doping content of the 4th ohmic contact layer 204 is 1.5 * 10 19/ cm 3By inserted tunnel junctions in ohmic contact layer, the top layer that makes its ohmic contact layer is P-type conduction.In battery chip manufacturing process, evaporation Ti/Au metal electrode 205 on p-type GaAs the 4th ohmic contact layer 204 through 360 ℃, obtains good ohmic contact behind 1 minute the rapid thermal annealing, and its resistivity is 1.2 * 10 -5, the battery fill factor, curve factor is about 85.3%.The thickness of getting Ti is that the thickness of 10nm, Au is 20nm, and then solar cell is stated in evaporation one stokehold in process of production, and the metal consumption of noble metal Au (20nm) electrode is 1g.
Find by contrast, the conventional full structure of GaInP/GaAs/Ge three junction batteries and the full structure of GaInP/GaAs/Ge three junction batteries provided by the present invention corresponding battery chip have similar series resistance and fill factor, curve factor, namely have similar battery performance.Required noble metal lacked a lot when yet required noble metal was than the conventional full structure fabrication metal electrode of GaInP/GaAs/Ge three junction batteries during GaInP/GaAs/Ge three junction battery structure fabrication metal electrode provided by the present invention, each stove consumes the AuGe of 5.1g less, and therefore compound semiconductor solar cell epitaxial structure provided by the present invention has preferably cost advantage.
Aforementioned solar cell, combining optical element can form the high concentration solar battery system.

Claims (9)

1.一种化合物半导体太阳能电池，包括一衬底，电池活性层，欧姆接触叠层，其特征在于：所述欧姆接触叠层插入一隧穿结，从而改变欧姆接触叠层表面的导电类型。 1. A compound semiconductor solar cell, comprising a substrate, a cell active layer, and an ohmic contact stack, characterized in that: the ohmic contact stack is inserted into a tunnel junction, thereby changing the conductivity type of the surface of the ohmic contact stack. 2.根据权利要求1所述的化合物半导体太阳能电池，其特征在于：所述欧姆接触叠层包含第一欧姆接触层、第二欧姆接触层、第三欧姆接触层和第四欧姆接触层，其中第二欧姆接触层和第三欧姆接触层共同构成隧穿结。 2. The compound semiconductor solar cell according to claim 1, wherein the ohmic contact stack comprises a first ohmic contact layer, a second ohmic contact layer, a third ohmic contact layer and a fourth ohmic contact layer, wherein The second ohmic contact layer and the third ohmic contact layer together form a tunnel junction. 3.根据权利要求2所述的化合物半导体太阳能电池，其特征在于：所述第一欧姆接触层和第二欧姆接触层导电类型一致，第三欧姆接触层和第四欧姆接触层导电类型一致。 3 . The compound semiconductor solar cell according to claim 2 , wherein the first ohmic contact layer and the second ohmic contact layer have the same conductivity type, and the third ohmic contact layer and the fourth ohmic contact layer have the same conductivity type. 4 . 4.根据权利要求3所述的化合物半导体太阳能电池，其特征在于：所述第一欧姆接触层和第二欧姆接触层的材料为n型GaAs，其中第一欧姆接触层的掺杂浓度小于第二欧姆接触层的掺杂浓度。 4. The compound semiconductor solar cell according to claim 3, characterized in that: the material of the first ohmic contact layer and the second ohmic contact layer is n-type GaAs, wherein the doping concentration of the first ohmic contact layer is lower than that of the second ohmic contact layer The doping concentration of the two-ohmic contact layer. 5.根据权利要求3所述的化合物半导体太阳能电池，其特征在于：所述第三欧姆接触层和第四欧姆接触层的材料为P型GaAs，其中第一欧姆接触层的掺杂浓度大于第二欧姆接触层的掺杂浓度。 5. The compound semiconductor solar cell according to claim 3, characterized in that: the material of the third ohmic contact layer and the fourth ohmic contact layer is P-type GaAs, wherein the doping concentration of the first ohmic contact layer is higher than that of the first ohmic contact layer The doping concentration of the two-ohmic contact layer. 6.根据权利要求1所述的化合物半导体太阳能电池，其特征在于：所述欧姆接触叠层表面呈P型导电。 6 . The compound semiconductor solar cell according to claim 1 , wherein the surface of the ohmic contact stack is P-type conductive. 7.根据权利要求6所述的化合物半导体太阳能电池，其特征在于：还包括一电极结构，其位于所述欧姆接触叠层表面上，其材料为Ti/Au。 7. The compound semiconductor solar cell according to claim 6, further comprising an electrode structure, which is located on the surface of the ohmic contact stack, and its material is Ti/Au. 8.根据权利要求1所述的化合物半导体太阳能电池，其特征在于：所述电池活性层包含一结或者多结子电池，所述欧姆接触叠层位于所述顶电池的顶部。 8. The compound semiconductor solar cell according to claim 1, wherein the cell active layer comprises a junction or multi-junction sub-cell, and the ohmic contact stack is located on top of the top cell. 9.一种太阳能发电系统，其特征在于：安装有前述任一权利要求所述的化合物半导体太阳能电池。 9. A solar power generation system, characterized in that: the compound semiconductor solar cell according to any one of the preceding claims is installed.
CN201210384264.2A 2012-10-12 2012-10-12 A kind of compound semiconductor solar cell Active CN102881736B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201210384264.2A CN102881736B (en) 2012-10-12 2012-10-12 A kind of compound semiconductor solar cell
PCT/CN2013/083908 WO2014056395A1 (en) 2012-10-12 2013-09-22 Compound semiconductor solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210384264.2A CN102881736B (en) 2012-10-12 2012-10-12 A kind of compound semiconductor solar cell

Publications (2)

Publication Number Publication Date
CN102881736A true CN102881736A (en) 2013-01-16
CN102881736B CN102881736B (en) 2015-12-16

Family

ID=47483002

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210384264.2A Active CN102881736B (en) 2012-10-12 2012-10-12 A kind of compound semiconductor solar cell

Country Status (2)

Country Link
CN (1) CN102881736B (en)
WO (1) WO2014056395A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014056395A1 (en) * 2012-10-12 2014-04-17 厦门市三安光电科技有限公司 Compound semiconductor solar battery

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1941427A (en) * 2005-09-28 2007-04-04 中国科学院半导体研究所 Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface
US20100006136A1 (en) * 2008-07-08 2010-01-14 University Of Delaware Multijunction high efficiency photovoltaic device and methods of making the same
CN101950773A (en) * 2010-08-09 2011-01-19 上海联孚新能源科技有限公司 Preparation method of multi-junction solar cell tunnel junction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63100781A (en) * 1986-10-17 1988-05-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
CN102414840A (en) * 2009-04-30 2012-04-11 汉阳大学校产学协力团 Silicon solar cell comprising a carbon nanotube layer
CN201466053U (en) * 2009-07-07 2010-05-12 扬州乾照光电有限公司 Light emitting diode
CN102569476A (en) * 2012-03-13 2012-07-11 天津三安光电有限公司 Three-section solar battery and preparation method thereof
CN102881736B (en) * 2012-10-12 2015-12-16 天津三安光电有限公司 A kind of compound semiconductor solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1941427A (en) * 2005-09-28 2007-04-04 中国科学院半导体研究所 Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface
US20100006136A1 (en) * 2008-07-08 2010-01-14 University Of Delaware Multijunction high efficiency photovoltaic device and methods of making the same
CN101950773A (en) * 2010-08-09 2011-01-19 上海联孚新能源科技有限公司 Preparation method of multi-junction solar cell tunnel junction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014056395A1 (en) * 2012-10-12 2014-04-17 厦门市三安光电科技有限公司 Compound semiconductor solar battery

Also Published As

Publication number Publication date
WO2014056395A1 (en) 2014-04-17
CN102881736B (en) 2015-12-16

Similar Documents

Publication Publication Date Title
CN101197399B (en) A kind of thin film silicon/crystalline silicon back junction solar cell
MY170106A (en) Method for manufacturing solar cell, solar cell and solar-cell module
CN104269457B (en) A kind of N-type IBC silicon solar cell manufacture method based on ion implantation technology
CN103178132B (en) Solaode
CN108352420B (en) Photovoltaic device and method of manufacturing the same
KR101886818B1 (en) Method for manufacturing of heterojunction silicon solar cell
CN205657066U (en) Back passivation contact battery electrode structure
CN103296123A (en) P-type carbon quantum dot/N-type silicon nano-wire array hetero-junction solar cell and method for manufacturing same
US20200313010A1 (en) Solar cell and solar cell module
CN106784068A (en) Graphene/gallium arsenide solar cell
CN105405901B (en) Localized contact back of the body passivation solar cell
CN110021673A (en) A kind of double-sided solar battery and preparation method thereof
CN102844881A (en) Multiple solar cell having p-n juction and schottky juction, and fabricating method thereof
CN103594530A (en) Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof
CN205985014U (en) Passivation projecting pole solar battery with stromatolite heterostructure
CN207353259U (en) A P-type PERC cell with front passivated contacts
CN101814539B (en) Solar cell and method for fabricating the same
CN204558503U (en) A kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed
CN104134706B (en) Graphene silicon solar cell and manufacturing method thereof
CN103199152A (en) Phosphorus diffusion method of crystal silicon slice
CN102931268A (en) N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof
CN102201480A (en) Cadmium telluride semiconductor thin-film heterojunction solar cell based on N-shaped silicon slice
CN104681651A (en) Silicon-based multi-junction solar cell
CN104465811A (en) Local back surface field n type solar cell
CN208722902U (en) A kind of back contacts heterojunction solar battery

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant