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CN1921159B - 具有紫外发光二极管及紫外反光板的光源 - Google Patents

具有紫外发光二极管及紫外反光板的光源 Download PDF

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CN1921159B
CN1921159B CN2006101114626A CN200610111462A CN1921159B CN 1921159 B CN1921159 B CN 1921159B CN 2006101114626 A CN2006101114626 A CN 2006101114626A CN 200610111462 A CN200610111462 A CN 200610111462A CN 1921159 B CN1921159 B CN 1921159B
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phosphor layer
phosphor
ultraviolet
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CN1921159A (zh
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蔡美莺
雷内·P·海尔兵
莫泽林
伍启元
陈吉恩
古沃凯
刘宇宏
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Avago Technologies International Sales Pte Ltd
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    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
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Abstract

一种光源，其可利用半导体辐射源产生白色光。该半导体辐射源可以是紫外(“UV”)发光二极管(“LED”)器件，其发出例如近紫色或紫外光的较短波长的光。磷光体的薄膜可以沉积或涂在UV LED的表面上或直接设置在UV LED之上。该光源还可包括辐射地连接至薄的磷光体层的UV反光板，其允许从薄的磷光体发出的可见白色光穿过并将较短波长的光反射回至薄的磷光体层。

Description

具有紫外发光二极管及紫外反光板的光源
技术领域
本发明涉及具有紫外发光二极管及紫外反光板的光源。
背景技术
大体而言，发光二极管(LED)是微型半导体器件，其采用对半导体材料进行电子激发而产生电致发光的形式来产生可见光。最初，对这些器件的使用主要局限于电子设备上的显示功能，且所发出的颜色为红色及绿色。随着技术的进步，LED变的功能更强且可发出较宽光谱中的各种颜色。
随着于1990年代早期制成第一只蓝色LED(其发出可见光光谱中与红色相反端的光)，实际产生各种颜色的光成为可能。通过LED器件，除了可以产生原色，即红、绿、蓝(即RGB颜色模式)，现在还可以实际产生任何颜色的光，包括白光。因为可以产生白光，故现在可利用LED替代白炽灯及荧光灯进行照明。白光照明还在某些医学应用中非常有效，例如，外科手术用医学设备、内窥镜检查、以及彩色照片评估等。利用LED进行照明的优点在于其远较于传统照明方式效率更高、结实小巧、并远较于白炽灯及荧光灯灯泡或灯更耐用。
可以以不同方式产生白光：通过混合红色、绿色及蓝色；通过利用紫外(“UV”)LED来激发白色荧光；或通过利用激发嵌入环氧顶罩中的发射黄色光的磷光体的蓝色发光二极管，而蓝色与黄色组合形成白色发光LED。而且，通过将白色荧光LED与多个琥珀色LED相组合，可以产生一系列不同的白色。
在需要整个光谱的颜色来自单个点光源的应用中，优选的方式是对在一个独立的封装中或在容纳一组二极管的灯组件中的红、蓝及绿二极管芯片进行组合。但是，因为在混合由这些组件发出的光时存在由三个发光组件发出的光的色调及亮度不同以及其他问题，故该方式不能如所希望的有效的产生白光。
大部分白色发光二极管都采用发出较短波长(蓝色、紫色或紫外线)的半导体芯片以及波长转换物，波长转换物吸收来自二极管的光，并以较长波长进行二次发光。因此，这些二极管发出两种或更多种波长的光，这些光被组合时显出白色。组合的发光的性质及光谱特性随着可行的不同设计变化而改变。最常用的波长转换材料是所谓的磷光体，其通常是当其从另一辐射源吸收能量时可发光的任何材料。通常应用的磷光体是由包含光学活性掺杂物的无机基质物质构成的。钇铝石榴石(“YAG”)是常用的基质材料，对于二极管方面的应用，通常用一种稀土元素或稀土化合物对其掺杂。在为了白色发光二极管所设计的YAG磷光体中，铈是常用的掺杂物元素。
目前制造的大部分“白色”LED都采用450nm-470nm蓝色氮化镓(“GaN”)LED，其被通常由铈掺杂钇铝石榴石(“YAG:Ce”)晶体(该晶体已制成粉末状并结合在粘性粘合剂中)制成的淡黄色磷光体涂层覆盖。LED芯片发出蓝色光，该蓝色光的一部分由YAG:Ce转换为黄色。YAG:Ce的单晶体形式实际上被认为是闪烁体而非磷光体。因为黄色光刺激人眼的红色及绿色受体，故蓝色光与黄色光的混合将显出白色光。
第一个可商购的白色发光器件(由Nichia Corporation制造并分销)是基于由黄色磷光体所包围的蓝色发光氮化镓铟(“GaInN”)半导体器件。该器件的一个示例由U.S.Patent Serial No.5,998,925、授权于Shimizu等人、名称为“Light Emitting Device Having a Nitride CompoundSemiconductor and a Phosphor Containing a Garnet Fluorescent Material”所揭示。
图1说明了这种类型的发光器件的截面结构。LED器件100设置有安装引线102及内部引线104。安装引线102还包括反射罩106，其中安装有蓝色发光二极管108。反射罩106填充有环氧树脂1 14，其中悬浮有粉末状磷光体。发光组件108的n电极及p电极通过接合线110及112分别连接至安装引线102及内部引线104。
磷光体可以是Ce掺杂YAG，其制成为粉末形式并悬浮在用于密封管芯的环氧树脂114中。该磷光体环氧混合物填充反射罩106(其将管芯支撑在安装引线102上)，且来自芯片的蓝色发光的一部分由磷光体吸收并以较长的磷光波长再次发出。因为仅需要一种类型的转换物，故在蓝光照射下组合黄色光激发是理想的。互补的蓝色及黄色波长通过迭加混合以产生所需的白色光。LED的合成发光光谱表现为磷光体发光与通过磷光体涂层的未被吸收的蓝色发光的组合。
白光二极管可根据另一机理而发光，即，利用由近紫色或紫外光辐射光学激发的宽光谱磷光体。在这种器件中，利用紫外发光二极管以向磷光体传送能量，而由磷光体产生全部可见发光。以这种方法产生白色光的优点在于其达到的彩色性能优于蓝色发光LED，这是因为UV LED对由该器件所产生的可见颜色不会有大的影响。
很容易获得在较宽波长范围上发光并产生白色光的磷光体，这是因为相同的材料应用于制造荧光管及阴极射线管。尽管荧光管通过气体放电过程而实现其UV发光，但产生白色光输出的磷光体发光阶段与UV激发的白色二极管中的相同。磷光体具有公知的彩色特性，故这种类型的器件具有其可被设计用于需要关键性的颜色渲染的应用的优点。但是，相较于采用蓝色光进行荧光激发的白色二极管，UV激发二极管的很大的缺点在于其较差的发光效率。这是因为从UV光到更长的可见波长的降频转换中能量损耗较高。
此外，使用UV LED的另一个缺点在于，由于较高的光子能量会导致化学键断裂以及环氧材料的结构分解，封装材料(即，围绕二极管用于密封发光器件的环氧树脂)会快速劣化。这导致照明(“Lv”)劣化，即由于磷光体/环氧材料受到来自UV LED的UV照射，随着时间流逝，输出的光减少了。此外，使用UV发光也增加了对人眼的伤害的危险，而需要对其补偿。
因此，需要减小在UV LED中UV环氧树脂或UV材料劣化的影响，由此改善发光效率及光源的使用寿命。此外，因为需要保护人眼，需要防止UV发光从LED漏出。
发明内容
本发明揭示了一种光源，其可利用紫外(“UV”)发光二极管(“LED”)器件及UV反光板产生白色光。该光源可包括UV LED作为其辐射源，所述UV LED发出例如近紫色或紫外光的较短波长的光，还包括可以沉积或涂在UV LED的表面上的磷光体的薄膜。该光源还可包括设置在薄的磷光体层之上的UV反光板材料。
在工作的示例中，UV LED发出较短波长的光，接着该光照在薄的磷光体层上。部分较短波长的光被磷光体层转化为白色光，而较短波长的光的另一部分穿过磷光体层透射。穿过磷光体层的那部分光照在UV反光板上，所述UV反光板允许可见光穿过并将UV光反射回至磷光体层。磷光体层将反射的UV光转化为白色光，然后所述白色光通过磷光体层再次发出。
通过研究以下附图及详细说明，本领域的技术人员将明白本发明的其他系统、方法及特征。意在将所有这些其他系统、方法、特征及优点包括在该说明中、落入本发明的范围内、并由所附权利要求保护。
附图说明
参考以下附图可以更好的理解本发明。图中的组件并不一定完全成比例，重点在于说明本发明的原理。在附图中，类似的参考标号用于表示各个示图中相应的部件。
图1示出了示意性截面图，说明了包括LED的已知光源的应用的示例。
图2示出了示意性截面图，说明了包括UV LED及UV反光板的光源的应用的示例。
图3示出了图2中所示的光源的示意性截面图，更详细的说明了UVLED及UV反光板。
图4示出了对于图2及图3中所示的UV反光板的示例应用，反射率随着以纳米(“nm”)为单位的光波长变化的图形表示。
具体实施方式
在优选实施例的以下描述中，参考组成其一部分的附图，且其示意性的示出了可实施本发明的具体实施例。不脱离本发明的范围，也可以采用其他实施例并进行结构改变。
大体上，本发明为一种光源，其可包括可以是紫外(“UV”)发光二极管(“LED”)的辐射源，该LED发出可以是在可见及不可见光光谱上的近紫色或紫外光的较短波长的光，即，具有约400纳米(“nm”)或更短的波长的光。大体上，术语“UV光”指具有不能被人眼所观察到的波长的光。
该光源还可以包括薄的磷光体层或涂附在UV LED的表面上的磷光体涂层。在薄的磷光体层上可以设置可反射由UV LED发出的UV光并允许较长波长的光通过其的UV反光板。被反射的UV光可再次射向薄的磷光体层，由此将反射的UV光转换为可见光，接着可见光穿过UV反光板，产生基于薄的磷光体层中的磷光体材料的色度(shade)的白色光。
图2示出了可产生可见光的光源的应用示例的示意性截面图。光源200设置有安装引线202及内部引线204。安装引线202还包括反射罩206，其中附装有UV发光二极管208。UV发光二极管208的n电极及p电极(未示出)通过单独的接合线(未示出)分别连接至安装引线202及内部引线204。
薄的磷光体层222可以直接涂在UV发光二极管208的表面上。薄的磷光体层222可以包含单一磷光体或多种磷光体的组合，当由来自UV发光二极管208的UV光激发时其将发出白色光。在另一应用中，磷光体可以悬浮在分布于UV发光二极管208的表面上的密封材料中。用于在半导体器件上沉积材料的方法，例如，在LED上沉积磷光体，在标题为“Electrophoretic Processes for the Selective Deposition of Materials on aSemiconducting Device”、于2005年3月8日公告的U.S.Patent No.6,864,110中进行了描述，在这里通过参考其全文而结合在本文中。
UV反光板224定位在薄的磷光体层222之上。在图2中示出UV反光板224直接附装在薄的磷光体层222上并大体为相同尺寸。但是，UV反光板也可以直接定位在薄的磷光体层222上并与其分离，并且可以是与薄的磷光体层222不同的尺寸，例如，UV反光板224可以更宽并叠置在薄的磷光体层222上。
图3示出了图2中的光源的示意性截面图，其更详细的示出了UVLED及UV反光板。在图3中，UV发光二极管308由反射罩306支撑并发出具有例如从380nm至410nm的波长的UV光330。UV光330“激发”薄的磷光体层322，且一部分UV光330由薄的磷光体层322吸收并转化为较长波长的光332。较长波长的光332穿过UV反光板324并变为可见光334。
UV光330的某些部分不会被薄的磷光体层322所转化，由此从薄的磷光体层322发出较短波长的光336。较短波长的光336被UV反光板324反射，产生反射光338。接着该反射光338“激发”薄的磷光体层322，产生另一较长波长的光340。该较长波长的光340穿过薄的磷光体层322，产生另一可见光342。
图4示出了对于图2及3中所示的UV反光板的示例应用，反射率随着以纳米(“nm”)为单位的光波长变化的图形表示。图4描述了理想的UV反光板，其基本上反射全部的具有约350nm或更短波长的光，同时允许具有约450nm或更长波长的光穿过。
虽然以上的描述参考使用UV LED，但主题不应限于以这种器件作为辐射源。可受益于由上述组件提供的功能的任何半导体辐射源都可以应用为光源，包括半导体激光二极管。
此外，需要理解的是，上述多种应用的描述目的仅在于说明而非限制。并不是绝对的且不应将所请求保护的发明限制为所揭示的特定形式。鉴于以上描述，修改及改变是可行的，或可以通过实践本发明而获得。权利要求及其等同物界定了本发明的范围。

Claims (20)

1.一种可发出可见光的光源，所述光源包括：
半导体辐射源；
位于所述半导体辐射源的表面之上的磷光体层，当被来自所述半导体辐射源的、由所述磷光体层吸收的辐射激发时，所述磷光体层发出光；及
紫外反光板，其被配置为将来自所述半导体辐射源的、未被所述薄的磷光体层吸收的部分辐射反射回至所述薄的磷光体层，
封装材料，所述封装材料用作所述光源的密封件，所述紫外反光板位于所述磷光体层与所述封装材料之间。
2.根据权利要求1所述的光源，其中所述半导体辐射源是可发出紫外光的紫外发光二极管。
3.根据权利要求2所述的光源，其中所述磷光体层是直接涂在所述紫外发光二极管的表面上的磷光体薄层。
4.根据权利要求3所述的光源，其中所述薄的磷光体层包含一种或多种磷光体，当被紫外发光二极管所发出的紫外光激发时所述磷光体发出可见光。
5.根据权利要求4所述的光源，其中所述磷光体层包括单一黄色磷光体，当被紫外光激发时所述黄色磷光体发出白色光。
6.根据权利要求4所述的光源，其中所述磷光体层包括磷光体体系，所述磷光体体系从由基于石榴石、基于硅酸盐、基于含氧硝酸盐、基于氮化物、基于硫化物、基于正硅酸盐、以及基于铝酸盐及硒化物的磷光体体系构成的组中选择。
7.根据权利要求3所述的光源，其中所述紫外反光板被配置为将接收自所述薄的磷光体层的、具有小于预定量的波长的光反射回至所述薄的磷光体层，并允许具有较长波长的光穿过所述紫外反光板。
8.根据权利要求7所述的光源，其中所述预定量具有在约380纳米至410纳米范围内的值。
9.根据权利要求2所述的光源，其中所述磷光体层包括透明密封材料，所述透明密封材料中悬浮有一种或多种磷光体，其中所述透明密封材料涂在所述半导体辐射源的表面上。
10.根据权利要求9所述的光源，其中所述透明密封材料是透明环氧树脂或硅酮体系。
11.一种利用光源产生可见光的方法，所述光源包括半导体辐射源、磷光体层、紫外反光板及封装材料，所述紫外反光板位于所述磷光体层与所述封装材料之间，所述方法包括：
从所述半导体辐射源发出光；
通过以所述发出的光激发所述磷光体层而将所述发出的光转化为转化的光，其中所述转化的光具有不同于所述发出的光的波长；
通过紫外滤光器过滤所述转化的光；
使经过过滤的光穿过所述封装材料出射。
12.根据权利要求11所述的方法，其中过滤所述转化的光的步骤还包括：
将具有小于预定长度的波长的光反射回至所述磷光体层；并
允许具有大于所述预定长度的波长的光穿过所述紫外滤光器。
13.根据权利要求12所述的方法，还包括：
通过以所述反射的光激发所述磷光体层，将从所述紫外滤光器反射的所述发出的光转化为二次转化的光，其中所述二次转化的光具有不同于所述反射的光的波长；且
通过所述紫外滤光器再次过滤所述二次转化的光。
14.根据权利要求13所述的方法，其中所述半导体辐射源是紫外发光二极管。
15.根据权利要求12所述的方法，其中所述磷光体层包含一种或多种磷光体，当被所述半导体辐射源所发出的紫外光激发时所述磷光体发出可见光。
16.根据权利要求15所述的方法，其中所述磷光体层包括单一黄色磷光体，当被紫外光激发时所述黄色磷光体发出白色光。
17.根据权利要求15所述的方法，其中所述磷光体层包括磷光体体系，所述磷光体体系从由基于石榴石、基于硅酸盐、基于含氧硝酸盐、基于氮化物、基于硫化物、基于正硅酸盐、以及基于铝酸盐及硒化物的磷光体体系构成的组中选择。
18.根据权利要求12所述的方法，其中所述预定长度具有在约380纳米至410纳米的范围内的值。
19.根据权利要求11所述的方法，其中所述磷光体层包括透明密封材料，所述透明材料中悬浮有一种或多种磷光体，其中所述透明密封材料涂在所述半导体辐射源的表面上。
20.根据权利要求19所述的方法，其中所述透明密封材料是透明环氧树脂或硅酮体系。
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