CN1892327A - Liquid crystal display device and fabrication method thereof - Google Patents
Liquid crystal display device and fabrication method thereof Download PDFInfo
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- CN1892327A CN1892327A CNA2006100903140A CN200610090314A CN1892327A CN 1892327 A CN1892327 A CN 1892327A CN A2006100903140 A CNA2006100903140 A CN A2006100903140A CN 200610090314 A CN200610090314 A CN 200610090314A CN 1892327 A CN1892327 A CN 1892327A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/365—Non-linear optics in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
A liquid crystal display device and its fabrication method may prevent occurrence of light leakage generated from the sides of a data line. A dummy pattern at sides of the data line with glass powder as an insulation film may simplify the repairing process. A method for fabricating a liquid crystal display device includes a gate electrode, a gate line, a dummy pattern and a first insulation film that are formed on a substrate. A switching element is formed on a portion of the gate electrode and includes a source electrode, a drain electrode and an active layer. A data line formed at a portion of the dummy pattern. A second insulation film is formed on the substrate and has a first contact hole that exposes a portion of the drain electrode. A pixel electrode is formed on the substrate and is electrically connected with the drain electrode through the first contact hole.
Description
Technical field
The present invention relates to a kind of liquid crystal display device and manufacture method thereof, relate in particular to a kind of liquid crystal display device and manufacture method thereof of using glass powder as dielectric film.
Background technology
Along with the consumer in the growth of the interest aspect the information demonstration and increase that portable (removable) information equipment is required, increased research and the commercialization of gossamery flat-panel monitor (" FPD ").Flat-panel monitor can substitute as the cathode-ray tube (CRT) (" CRT ") of ubiquitous display device.
LCD is (" LCD ") FPD device by the optical anisotropy display image of use liquid crystal.The LCD device demonstrates outstanding resolution and color and image quality, and thereby, they are widely used in notebook computer and desktop monitor or the like.Usually, in the LCD device, be provided to liquid crystal cells independently, and the light transmission of control liquid crystal cells shows needed image with cells arranged in matrix based on the data of image information signal.
Referring now to Fig. 1 the LCD device is described in detail.Fig. 1 is the decomposition diagram that common prior art LCD device architecture is shown.As shown in Figure 1, the LCD device comprises colour filtering chip basic board 5, i.e. first substrate, and array base palte 10, i.e. second substrate, and be formed on liquid crystal layer 30 between colour filtering chip basic board 5 and the array base palte 10.Colour filtering chip basic board comprises the color filter (C) of the sub-color filter 7 that is used to realize red (R), green (G) and blue (B) look, be used to divide sub-color filter 7 and cover black matrix 6 through the light of liquid crystal layer 30, and the transparent common electrode 8 that is used for voltage is applied to liquid crystal layer 30.
The manufacturing step of LCD device can be divided into array step that forms on-off element on array base palte and the color filter step that forms color filter.When array base palte and colour filtering chip basic board were made by this array step and color filter step, they were bonding to finish LCD panel by unit step.Compare with the color filter step with this array step, this unit step does not comprise the step of repeatability.This unit step can be divided into the oriented film that makes the liquid crystal molecule orientation and form step, the formation of box gap step, cutting step and liquid crystal implantation step.LCD panel by the above-mentioned steps manufacturing is screened by inspection.If determine that LCD panel is good, then polarization plates bonded on the outside of this LCD panel, and driving circuit is connected thereto, to finish this LCD device.
In the above-mentioned inspection step of LCD device, show on the screen of LCD panel whether test pattern has defect pixel to check.When finding the defectiveness pixel, carry out and repair step.The defective of LCD device may comprise any color of pixel defective, such as the point defect of spot (under continuous ON state) or dim spot (under OFF state continuously).Other defect can be short circuit between the adjacent connection line or open circuit, because the line defect that the on-off element that static causes puncture causes etc.Particularly, the disconnection of data line is a kind of line defect.Under the situation of point defect, according to degree, quantity and the type of its distribution, it may be tolerable, but under the situation of line defect, even a line defect is just very serious.Line defect has seriously weakened the quality of display, and its existence can cause the loss of the output value.
In this case, overlapping or close data line forms to improve the aperture ratio if pixel electrode is with data line, then may produce stray capacitance between this data line and this pixel electrode.Then, the liquid crystal layer that is arranged on the data line left and right sides will be arranged along undesirable direction, thereby cause light leak in this zone.
Summary of the invention
In first aspect, a kind of liquid crystal display device comprises the grid that is formed on the substrate, grid line and dummy pattern.First dielectric film is formed on this substrate.In addition, on-off element is formed on the part of this grid and comprises source electrode, drain electrode and active layer.Data line is formed on the part place of dummy pattern, and second dielectric film is formed on this substrate and has first contact hole of expose portion drain electrode.Pixel electrode is formed on this substrate and by this first contact hole and is electrically connected with this drain electrode.
In second aspect, a kind of method that is used to make liquid crystal display device is included in and forms grid, grid line and dummy pattern on the substrate.Then first dielectric film is formed on this substrate and with on-off element and is formed on this first dielectric film.This on-off element comprises source electrode, drain electrode and at the active layer at the part place of this grid.Data line is formed on the part place of this dummy pattern and second dielectric film is formed on this substrate.By being removed, this second dielectric film forms first contact hole.This first contact holes exposing partly drains.Form the pixel electrode that is electrically connected with this drain electrode by this first contact hole.
In the third aspect, a kind of liquid crystal display device comprises grid, grid line and the dummy pattern that is formed on the substrate.First dielectric film is formed on this grid and the grid line.This first dielectric film can comprise glass powder.On-off element is formed on the part of this grid and comprises source electrode, drain electrode and active layer.Data line is formed on this substrate and intersects with this grid line.The adjacent formation of at least one side of this dummy pattern and this data line.Second dielectric film is formed on this substrate and has first contact hole of expose portion drain electrode.Pixel electrode is formed on this substrate and by this first contact hole and is electrically connected with this drain electrode.
In fourth aspect, a kind of liquid crystal display device comprises grid, grid line and the dummy pattern that is formed on the substrate.First dielectric film is formed on this grid and the grid line.On-off element is formed on the part of this grid and comprises source electrode, drain electrode and active layer.Data line is formed on this substrate and intersects with this grid line.At least one side of this dummy pattern and this data line is adjacent to form.Connecting line makes this dummy pattern link to each other with this data line.Second dielectric film is formed on this connecting line top on this substrate.This second dielectric film has first contact hole of expose portion source electrode.Pixel electrode is formed on this substrate and by this first contact hole and is electrically connected with this drain electrode.
When in conjunction with the accompanying drawings, above-mentioned and other embodiments, feature, aspect and the advantage of content disclosed herein will become clearer by the following detailed description to content disclosed herein.
Description of drawings
Be included in further understanding that embodiment is provided and included and the accompanying drawing that constitutes a part of the present invention has been described the embodiment of disclosed content and has been used from the principle of explaining these embodiments with this instructions one.
In the drawings:
Fig. 1 is the decomposition diagram that common prior art LCD device architecture is shown;
Fig. 2 is the planimetric map that illustrates based on the part of the LCD device array substrate of first embodiment;
Fig. 3 A to 3H is that it shows manufacturing step successively along the sectional view of the line IIa-IIa ' of array base palte among Fig. 2 and IIb-IIb ' extraction;
Fig. 4 A to 4E shows the planimetric map of the manufacturing step of array base palte among Fig. 2 successively;
Fig. 5 A is a part of planimetric map that illustrates based on the array base palte of the LCD device of second embodiment;
Fig. 5 B illustrates along the line Va-Va ' of the array base palte among Fig. 5 A and the sectional view of Vb-Vb ' extraction;
Fig. 6 is a part of planimetric map that illustrates based on the array base palte of the LCD device of the 3rd embodiment;
Fig. 7 is a part of planimetric map that illustrates based on the array base palte of the LCD device of the 4th embodiment.
Embodiment
Referring now to liquid crystal display (LCD) device and the manufacturing thereof of accompanying drawing description based on embodiment of the present invention.
Fig. 2 is a part of planimetric map that illustrates based on the array base palte of the LCD device of first embodiment.Can have and form N bar grid line intersected with each other and M bar data line (not shown) on array base palte 10, to limit M * N pixel.But, in Fig. 2, for the sake of brevity, on figure, only show (m, n) individual pixel.
As shown in the figure, array base palte 110 comprises that sweep signal is applied to grid line 116 on it from the external drive circuit (not shown), picture signal is applied to the data line 117 on it, be formed on thin film transistor (TFT) (" the TFT ") T at the place, point of crossing of this grid line 116 and this data line 117, be on-off element, and the pixel electrode 118 that links to each other with this TFT.
TFT comprises the grid 121 that links to each other with this grid line 116, source electrode 122 that links to each other with this data line 117 and the drain electrode 123 that links to each other with this pixel electrode 118.TFT also comprise be used to make this grid 121 respectively with the first dielectric film 115A of this source electrode 122 and drain electrode 123 insulation, and be used for by gate voltage being provided to this grid 121 active layer 120 of formation conducting channel between this source electrode 122 and this drain electrode 123 '.In this case, the second dielectric film (not shown) with first contact hole 140A is formed in this drain electrode 123, allows this drain electrode 123 and this pixel electrode 118 to be electrically connected to each other by this first contact hole 140A.
The (m, n+1) part of individual pixel electrode (118n+1) is towards the grid line 116 of respective pixel, promptly n bar grid line 116 extends, with first storage electrode 116 that forms the part that grid line 116 protrudes ' overlapping.This first overlapping storage electrode 116 ' and the (m, n+1) this part of individual pixel electrode (118n+1) forms and has the memory capacitance that is inserted in the first dielectric film 115A therebetween.
When dummy pattern 150 is formed on the left and right sides of data line 117 and glass powder is formed when forming the grid lead-in wire at an upper portion thereof, this glass powder not only can repair data line 117 and is used to prevent that light from passing dummy pattern 150 and leaking.In addition, because the glass powder that will have a less dielectric constant values is used to form this first dielectric film 115A, i.e. therefore gate insulating film can improve the electrical characteristics of this TFT in fact.
About the manufacturing step of this LCD device, in the manufacturing of the array base palte that comprises TFT, may need many wheel masks (that is, lithography step), therefore, aspect throughput rate, need reduce the quantity of masks.
Fig. 3 A to 3H is that it shows manufacturing step along the sectional view of the line IIa-IIa ' of array base palte among Fig. 2 and IIb-IIb ' extraction, and Fig. 4 A to 4E is the planimetric map that the manufacturing step of the array base palte among Fig. 2 is shown.
In the present embodiment, carry out four-wheel masks (four-wheel lithography step just) forming this array base palte, but be not limited thereto, can not consider that the quantity of masks uses.
Shown in Fig. 3 A and 4A, comprise grid 121 and storage electrode 116 ' grid line 116 and dummy pattern 150 be formed on the substrate 110 that constitutes by transparent insulation material such as glass.Dummy pattern 150 can be formed on data line about the zone and be used to repair this data line and avoid this data line and this pixel electrode between light leak.
After on the whole surface that this first conductive material is deposited on substrate 110, carry out composition by lithography step (first masks) and form grid 121, grid line 116, first storage electrode 116 ' and dummy pattern 150.As first conductive material, can use the opaque conductive material of low resistance, such as aluminium (Al), Al alloy, tungsten (W), copper (Cu), chromium (Cr), molybdenum (Mo) etc.In addition, can with grid 121, grid line 116, first storage electrode 116 ' and dummy pattern 150 form sandwich construction, in this sandwich construction, pile up two kinds and more eurypalynous low resistance conductive material.In addition, based on present embodiment, can by composition have grid 121, grid line 116 and first storage electrode 116 ' grid lead-in wires conductive material form dummy pattern 150.Therefore, needn't need extra masks.
Shown in Fig. 3 B and 4B, form the first dielectric film 115A with cover gate 121, grid line 116, first storage electrode 116 ' and dummy pattern 150.As mentioned above, the first dielectric film 115A can form by printing, deposition or sintered glass powder.By printing process, the glass powder that is mixed into solvent forms pattern by printing, makes solvent evaporates by sintering then.In sintering method, powder is pressurised into suitable form, then its heating is made its closely combination and sintering.Because glass powder has low relatively specific inductive capacity, therefore compare it and can advantageously generate thinly with other inorganic insulating membranes such as silicon nitride film.
Then, shown in Fig. 3 C, the amorphous si film 120, n+ amorphous si film 130 and the conducting film 160 that are formed by second conductive material can form on the surface of the substrate 110 that is formed with the first dielectric film 115A thereon.
Shown in Fig. 3 D, the photosensitive film 170 that is made of the photochromics such as photoresist is formed on the whole surface of substrate 110, and by slit (or diffraction) mask 180 that comprises slit areas illumination is mapped on the photosensitive film 170.Slit mask 180 comprises first regional transmission (I) that is used for all light of transmission, is used for second regional transmission (II) of transmission part light, and the occlusion area (III) that is used to block all irradiates lights.Only the transmission light that passes mask 180 can shine on the photosensitive film 170.
When using slit mask 180 in the present embodiment, second regional transmission (II) has narrow slit structure, and the light quantity of passing this second regional transmission (II) irradiation is less than the light quantity that shines on first regional transmission (I), and this first regional transmission (I) allows all transmittance to pass in fact.Therefore, after applying photosensitive film 170, utilize mask 180 to make photosensitive film 170 exposures and development with local slot zone (II).Dissimilate at the thickness of the residual photosensitive film of slit areas (II) and thickness at the residual photosensitive film of first regional transmission (I) and occlusion area (III).
In an example, by using positive light anti-etching agent, can make thickness at the residual photosensitive film of slit areas (II) less than thickness at the residual photosensitive film of occlusion area (III) as photosensitive film 170.Replacedly, by using negative type photoresist, can make thickness at the residual photosensitive film of slit areas (II) less than thickness at the residual photosensitive film of first regional transmission (I) as photosensitive film 170.Based on present embodiment, use positive light anti-etching agent, and replaceable embodiment is not limited thereto, and also can uses negative type photoresist.
Subsequently, when making the photosensitive film 170 that exposes by slit mask 180 develop (second masks), shown in Fig. 3 E, the photosensitive pattern 170A ~ 170D that respectively has specific thicknesses is retained in the zone that light is blocked by occlusion area (III) and second regional transmission (II) or part is blocked.The photosensitive film that passes the zone that first regional transmission (I) shines fully at light is removed to expose the surface of conducting film 160.In this case, to be formed on the 4th photosensitive film pattern 170D of second regional transmission (II) thick for first to the 3rd photosensitive film pattern 170A to the 170C ratio that forms by occlusion area (III).
Particularly, in the present embodiment, the first photosensitive film pattern 170A with first thickness be retained in figure left part regions and source (promptly, the source electrode that will form by the etch step that will describe and the zone of drain electrode) top, the second photosensitive film pattern 170B with first thickness be retained in first storage electrode 116 at the middle part of figure ' the specific region, top, and the 3rd photosensitive film pattern 170C with first thickness is retained between a pair of dummy pattern 150 of figure right part.In addition, the 4th photosensitive film pattern 170D with second thickness is retained between source region and the drain region.
After this, by use photosensitive film pattern 170A ~ 170D can optionally remove conducting film 160, n+ amorphous si film 130 and amorphous si film 120 with the top at grid 121 form the active layer 120 that constitutes by amorphous si film '.Storage electrode 116 ' top form second storage electrode 160 by conducting film ", and the top between dummy pattern 150 forms data line 117 by conducting film.
In this case, a n+ amorphous si film pattern 130 that forms by the n+ amorphous si film ' and by conduction film formed first conductive film pattern 160 ' can be formed on active layer 120 ' top.The second amorphous si film pattern 120 " and the 2nd n+ amorphous si film pattern 130 " that forms pattern with same form can be formed on second storage electrode 160 " the bottom.In addition, form the 3rd amorphous si film pattern 120 of pattern and the bottom that the 3rd n+ amorphous si film pattern 130 can be formed on data line 117 with same form or shape.
The 4th photosensitive film pattern 170D of second regional transmission (II) can be removed fully by cineration step in the present embodiment.Shown in Fig. 3 F and 4C, it is so much to make the first photosensitive film pattern 170A, the second photosensitive film pattern 170B and the 3rd photosensitive film pattern 170C remove the thickness of the 4th photosensitive film pattern 170D of second regional transmission (II) as much as possible, stays the 5th photosensitive film pattern 170A ', the 6th photosensitive film pattern 170B ' and the 7th photosensitive film pattern 170C ' with the 3rd thickness thus.When by with residual photosensitive film pattern 170A ' ~ 170C ' as mask and to first conductive film pattern 160 ' and n+ amorphous si film pattern 130 ' when optionally removing, have first conductive film pattern 160 ' source electrode 122 and drain electrode 123 can be formed on active layer 120 ' top.
The one n+ amorphous si film pattern 130 ' also can with identical form form pattern be formed for allowing source electrode and drain electrode 122 and 123 and active layer 120 ' the specific region ohmic contact layer 125 of Ohmic contact each other.Therefore, can by one take turns masks form active layer 120 ', source electrode and drain electrode 122 and 123 and data line 117, so can reduce the quantity of mask.Yet interchangeable embodiment is not limited to this, and be used for active layer 120 ' masks different, source electrode and drain electrode 122 and 123 can form by masks independently.That is to say, active layer 120 ' and source electrode and drain electrode 122 and 123 and data line 117 can by two independently the example of masks form.
In the present embodiment, when on the part of data line 117, the line defect of disconnection taking place, carry out and repair step by the dummy pattern 150 that is formed on data line 117 left and right sides the data line 117 that disconnects is reconnected by use connecting line (not shown).Repair procedure can be carried out so that by using laser that the first insulation course 115A of the top of data line 117 upper and lowers that are positioned at disconnection is melted with expose portion dummy pattern 150.The dummy pattern 150 of this exposure can connect via this connecting line by welding in the top and the bottom of the disconnection of data line 117.
Then, shown in Fig. 3 G and 4D, the second dielectric film 115B is formed on the whole surface of substrate 110.Then, by use lithography step (the 3rd masks) optionally to the second dielectric film 115B composition forming the first contact hole 140A of expose portion drain electrode 123, and form expose portion second storage electrode 160 simultaneously " the second contact hole 140B.
Shown in Fig. 3 H and 4E, the 3rd conductive material is deposited on the whole surface of substrate 110, then by using lithography step (the 4th masks) that its composition is passed through the first contact hole 140A and drain electrode 123 pixel electrode that is electrically connected 118 and 118n+1 to form.In this case, the (m, n+1) part of the individual pixel electrode 118n+1 grid line 116 that extends to respective pixel with grid line 116 overlaids, and " be electrically connected with bottom second storage electrode 160 by the second contact hole 140B.
In the present embodiment, come the manufacturing array substrate by the example that uses the four-wheel masks, but be not limited to this, interchangeable example can not consider that the quantity of masks uses.In addition, with an example that uses the amorphous si film TFT of amorphous si film as an embodiment that is used for active layer, but be not limited to this.Also can use based on interchangeable embodiment and to have polysilicon membrane as the multi-crystal TFT of active layer.
Can use embodiments of the present invention and do not consider the pattern of LCD device, such as twisted nematic (TN) pattern, in-plain switching (IPS) pattern and perpendicular alignmnet (VA) pattern.In addition, the different display devices that present embodiment can be used to use TFT to make, for example Organic Light Emitting Diode (OLED) display device that links to each other with driving transistors of OLED.
In the first embodiment, the first dielectric film 115A that is made of glass powder forms and covers dummy pattern 150 fully, but present embodiment is not limited to this, and the first dielectric film 115A can only cover the part of dummy pattern 150.This will be described in second embodiment below.
Fig. 5 A shows a part of planimetric map based on the array base palte of the LCD device of second embodiment, wherein shows (m, n) individual pixel example.Fig. 5 B illustrates along the line Va-Va ' of the array base palte of Fig. 5 A and the cross sectional view of Vb-Vb ' extraction.
Shown in Fig. 5 A and 5B, in second embodiment, array base palte 210 comprises that sweep signal is applied to grid line 216 on it from the external drive circuit (not shown), picture signal is applied to the data-signal 217 on it, is formed on the TFT (or on-off element) at the place, point of crossing of grid line 216 and data line 217.TFT comprises the grid 221 that is connected with grid line 216, source electrode 222 that is connected with data line 217 and the drain electrode 223 that is connected with pixel electrode 218.In addition, TFT comprises the first dielectric film 215A that are used to make grid 221 and source electrode and drain electrode 222 and 223 insulation, and be used for gate voltage by being applied to grid 221 at source electrode 222 with the active layer 220 that forms conducting channel between 223 of draining '.The second dielectric film 215B with first contact hole 240A is arranged in the drain electrode 223, makes drain electrode 223 and pixel electrode 218 to be electrically connected by the first contact hole 240A.
The (m, n+1) part of individual pixel electrode (218n+1) is towards the grid line of respective pixel, just n bar grid line 216 extends, with first storage electrode 216 that forms the part that grid line 216 protrudes ' overlapping.This first overlapping storage electrode 216 ' and the (m, n+1) this part of individual pixel electrode (218n+1) forms the first dielectric film 215A is inserted in therebetween memory capacitance.Dummy pattern 250 can be formed on zone about data line 217 specific so that repair this data line 217 when producing the disconnection defective on data line 217.As mentioned above, dummy pattern 250 can be formed on the specific part of the left and right sides of data line.Dummy pattern 250 can be arranged between data line 217 and the pixel electrode 218 and form opaque grid lead-in wire, to be used to avoid as Protective film because the light leak that the stray capacitance that produces between data line 217 and the pixel electrode 218 causes.
Second storage electrode 260 " can be formed on first storage electrode 216 ' top, and second storage electrode 260 " (m, n+1) individual pixel electrode (218n+1) is electrically connected by being formed on the second contact hole 240B and the on the second dielectric film 215B.As mentioned above, the first dielectric film 215A can be for having the glass powder of little specific inductive capacity (k) value.The first dielectric film 215A that forms by glass powder can composition so that the top of cover gate 221 and grid line 216 only.
In addition, can be to the first dielectric film 215A composition so that only cover the part of dummy pattern 250.In other words, the local top and the bottom of dummy pattern 250 are not covered (with reference to Fig. 5 B) by the first dielectric film 215A.Based on present embodiment, even when data line 217 disconnects, also do not need to weld the first dielectric film 215A.
In the LCD based on first and second embodiments, for example, first dielectric film can be formed on the data line zone between the dummy pattern of the left and right sides.Yet replaceable embodiment can comprise that first dielectric film is not formed on the situation that data line passes the zone between therebetween the left and right sides dummy pattern, and this is described in more detail with reference to the 3rd embodiment of the present invention.
Fig. 6 is a part of planimetric map that illustrates based on the LCD device array substrate of the 3rd embodiment.As shown in Figure 6, in the 3rd embodiment, array base palte 310 comprises that sweep signal is applied to grid line 316 on it from the external drive circuit (not shown), and picture signal is applied to the data line 317 on it, with the TFT at the place, point of crossing that is formed on grid line 316 and data line 317, or on-off element.
TFT comprises the grid 321 that is connected with grid line 316, source electrode 322 that is connected with data line 317 and the drain electrode 323 that is connected with pixel electrode 318.In addition, TFT comprises the first dielectric film 315A that are used to make grid 321 and source electrode and drain electrode 322 and 323 insulation, and be used for gate voltage by being applied to grid 321 at source electrode 322 with the active layer 320 that forms conducting channel between 323 of draining '.The second dielectric film (not shown) with first contact hole 340A is arranged in the drain electrode 323, makes drain electrode 323 and pixel electrode 318 to be electrically connected by the first contact hole 340A.
The (m, n+1) part of individual pixel electrode (318n+1) is towards the grid line of respective pixel, just n bar grid line 316 extends, with first storage electrode 316 that forms the part that grid line 316 protrudes ' overlapping.This first overlapping storage electrode 316 ' and the (m, n+1) part of individual pixel electrode (318n+1) forms the first dielectric film 315A is inserted in therebetween memory capacitance.
Dummy pattern 350 be formed on data line 317 about the zone in case when on data line 317, producing the disconnection defective repair data line 317.Dummy pattern 350 can be arranged between data line 317 and the pixel electrode 318 and form opaque grid lead-in wire, to be used to avoid as Protective film because the light leak that the stray capacitance that produces between data line 317 and the pixel electrode 318 causes.
Second storage electrode 360 " can be formed on first storage electrode 316 ' top, and second storage electrode (m, n+1) individual pixel electrode (318n+1) is electrically connected by being formed on the second contact hole 340B and the on second dielectric film.
As mentioned above, the first dielectric film 315A can be for having the glass powder of little specific inductive capacity (k) value.The first dielectric film 315A that is formed by glass powder is patterned so that the top of cover gate 321 and grid line 316 only.In addition, to the first dielectric film 315A composition so that only cover the part of left and right sides dummy pattern 350.As in second embodiment, the local top and the bottom of dummy pattern 350 are not covered by the first dielectric film 315A.Adopt this structure, even when data line 317 disconnects, also do not need to weld the first dielectric film 315A.In other words, because the first dielectric film 315A is not formed on the local top and the bottom of dummy pattern 350, therefore can easily carry out welding step.In addition, to the first dielectric film 315A composition so that only cover left and right sides dummy pattern 350, so the first dielectric film 315A is not formed on the zone between the left and right sides dummy pattern 350 that data line 317 passes.As a result, dummy pattern 350 can be arranged on identical in fact layer with data line 317.
Based on first to the 3rd embodiment, as an example, first dielectric film can be formed on the top of dummy pattern.Yet replaceable embodiment can comprise that first dielectric film is not formed on the situation on the top of dummy pattern, and this will be described in detail in the 4th embodiment.
Fig. 7 is a part of planimetric map that illustrates based on the LCD device array substrate of the 4th embodiment.As shown in Figure 7, in the 4th embodiment, array base palte 410 comprises that sweep signal is applied to grid line 416 on it from the external drive circuit (not shown), and picture signal is applied to the data line 417 on it, with the TFT at the place, point of crossing that is formed on grid line 416 and data line 417, i.e. on-off element.
TFT comprises the grid 421 that is connected with grid line 416, source electrode 422 that is connected with data line 417 and the drain electrode 423 that is connected with pixel electrode 418.In addition, TFT comprises the first dielectric film 415A that are used to make grid 421 and source electrode and drain electrode 422 and 423 insulation, and be used for gate voltage by being applied to grid 421 at source electrode 422 with the active layer 420 that forms conducting channel between 423 of draining '.The second dielectric film (not shown) with first contact hole 440A is arranged in the drain electrode 423, makes drain electrode 423 and pixel electrode 418 to be electrically connected by the first contact hole 440A.
The (m, n+1) part of individual pixel electrode (418n+1) is towards the grid line of respective pixel, just n bar grid line 416 extends, with first storage electrode 416 that forms the part that grid line 416 protrudes ' overlapping.This first overlapping storage electrode 416 ' and the (m, n+1) part of individual pixel electrode (418n+1) forms the first dielectric film 415A is inserted in therebetween memory capacitance.
Dummy pattern 450 be formed on zone about data line 417 specific in case when on data line 417, producing the disconnection defective repair data line 417.As mentioned above, dummy pattern 450 can be formed on the specific part of data line left and right sides.Dummy pattern 450 can be arranged between data line 417 and the pixel electrode 418 and form opaque grid lead-in wire, to be used to avoid as Protective film because the light leak that the stray capacitance that produces between data line 417 and the pixel electrode 418 causes.
Second storage electrode 460 " can be formed on first storage electrode 416 ' top, and second storage electrode (m, n+1) individual pixel electrode (418n+1) is electrically connected by being formed on the second contact hole 440B and the on second dielectric film.
As mentioned above, the first dielectric film 415A can be for having the glass powder of little specific inductive capacity (k) value.To the first dielectric film 415A composition that forms by glass powder so that the top of cover gate 421 and grid line 416 only.
In the present embodiment, the first dielectric film 415A is not formed on the top of dummy pattern 450, when data line 417 disconnects, does not need to weld the first dielectric film 415A thus, repairs step so can easily carry out on data line 417.Dummy pattern 450 is arranged on the identical in fact layer with data line 417.
Because present embodiment can be embodied as various ways under the situation that does not break away from its spirit or essential characteristic, therefore be to be understood that, unless stated otherwise, otherwise above-mentioned embodiment is not limited to previously described details, but should as defined in additional claims, in its spirit and scope, carry out wide in range explanation, and therefore plan to make additional claims comprise all border that falls into these claims and scopes, or the changes and improvements within the equivalent of these borders and scope.
Claims (44)
1. method that is used to make liquid crystal display device comprises:
Grid, grid line and dummy pattern are provided on substrate;
On this grid and this grid line, form first dielectric film;
Part place at this grid provides on-off element, and this on-off element comprises source electrode, drain electrode and active layer;
The data line that intersects with this grid line is provided on this substrate;
On this substrate, form second dielectric film;
The part of this second dielectric film is removed to form first contact hole of expose portion drain electrode; And
Form the pixel electrode that is electrically connected with drain electrode by this first contact hole;
Wherein at least one side of this dummy pattern and this data line is adjacent to form.
2. method as claimed in claim 1 is characterized in that, the part of described data line is formed on this first dielectric film.
3. method as claimed in claim 2 is characterized in that, described first dielectric film is formed on this dummy pattern.
4. method as claimed in claim 2 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
5. method as claimed in claim 1 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
6. method as claimed in claim 1 is characterized in that, described dummy pattern is formed on one of the left side of this data line and right side, perhaps is formed on the left and right sides simultaneously.
7. method as claimed in claim 1 is characterized in that, described dummy pattern is by forming with the similar manufacturing step of the manufacturing step of this grid and this grid line.
8. method as claimed in claim 1 is characterized in that, when taking place to disconnect defective on this data line, by repairing this dummy pattern of step the top and the bottom of the data line of this disconnection is electrically connected.
9. method as claimed in claim 8 is characterized in that, the top and the bottom of the data line of described disconnection are electrically connected with this dummy pattern by welding.
10. method as claimed in claim 9 is characterized in that, laser is adopted in described welding.
11. method as claimed in claim 1 is characterized in that, described first dielectric film is formed by glass powder.
12. the method as claim 11 is characterized in that, described first dielectric film forms by printing and sintering step.
13. the method as claim 11 is characterized in that, described first dielectric film is by applying and sintering step formation.
14. a method that is used for repairing liquid crystal display device comprises:
Grid, grid line and dummy pattern are provided on substrate;
On this grid and grid line, form first dielectric film;
Part place at this grid provides on-off element, and this on-off element comprises source electrode, drain electrode and active layer;
The data line that intersects with this grid line is provided on this substrate;
Repair this data line by being connected with dummy pattern;
On this substrate, form second dielectric film;
With the part of this second dielectric film remove with form the expose portion drain electrode first contact hole; And
Form the pixel electrode that is electrically connected with this drain electrode by this first contact hole;
Wherein at least one side of this dummy pattern and this data line is adjacent to form.
15. the method as claim 14 is characterized in that, the part of described data line is formed on this first dielectric film.
16. the method as claim 15 is characterized in that, described first dielectric film is formed on this dummy pattern.
17. the method as claim 15 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
18. the method as claim 14 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
19. the method as claim 14 is characterized in that, described dummy pattern is formed on one of the left side of this data line and right side, perhaps is formed on the left and right sides simultaneously.
20. the method as claim 14 is characterized in that, described dummy pattern is by forming with the similar manufacturing step of the manufacturing step of this grid and this grid line.
21. the method as claim 14 is characterized in that, the step of described reparation comprises makes this dummy pattern be electrically connected with the top and the bottom of the data line of disconnection.
22. the method as claim 21 is characterized in that, these top and the bottom of the data line of described disconnection are electrically connected with this dummy pattern by welding.
23. the method as claim 22 is characterized in that, laser is adopted in described welding.
24. the method as claim 14 is characterized in that, described first dielectric film is formed by glass powder.
25. the method as claim 24 is characterized in that, described first dielectric film forms by printing and sintering step.
26. the method as claim 24 is characterized in that, described first dielectric film is by applying and sintering step formation.
27. a liquid crystal display device comprises:
Be formed on grid, grid line and dummy pattern on the substrate;
Be formed on first dielectric film on this grid and the grid line, wherein this first dielectric film comprises glass powder;
Be formed on the part of this grid and comprise the on-off element of source electrode, drain electrode and active layer;
Be formed on the data line that intersects with this grid line on this substrate, wherein the adjacent formation of at least one side of this dummy pattern and this data line;
Be formed on this substrate and have second dielectric film of first contact hole of expose portion drain electrode; And
Be formed on the pixel electrode that also is electrically connected with this drain electrode on this substrate by this first contact hole.
28. the device as claim 27 is characterized in that, the part of described data line is formed on this first dielectric film.
29. the device as claim 28 is characterized in that, described first dielectric film is formed on this dummy pattern.
30. the device as claim 28 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
31. the device as claim 27 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
32. the device as claim 27 is characterized in that, described dummy pattern is arranged on one of the left side of bottom of this data line and right side, perhaps is arranged on the left and right sides simultaneously.
33. the device as claim 27 is characterized in that, described dummy pattern is made of the conductive material identical with this grid line with this grid.
34. the device as claim 27 is characterized in that, when taking place to disconnect defective on this data line, by repairing this dummy pattern of step the breaking part of the data line of this disconnection is electrically connected.
35. the device as claim 34 is characterized in that, the breaking part of described data line is electrically connected with this dummy pattern by utilizing laser bonding.
36. a liquid crystal display device comprises:
Be formed on grid, grid line and dummy pattern on the substrate;
Be formed on first dielectric film on this grid and the grid line;
Be formed on the part of this grid and comprise the on-off element of source electrode, drain electrode and active layer;
Be formed on the data line that intersects with this grid line on this substrate, wherein the adjacent formation of at least one side of this dummy pattern and this data line;
The connecting line that this dummy pattern is linked to each other with this data line;
Be formed on second dielectric film that is positioned at this connecting line top on this substrate, this second dielectric film has first contact hole of expose portion drain electrode; And
Be formed on the pixel electrode that also is electrically connected with this drain electrode on this substrate by this first contact hole.
37. the device as claim 36 is characterized in that, the part of described data line is formed on this first dielectric film.
38. the device as claim 37 is characterized in that, described first dielectric film is formed on this dummy pattern.
39. the device as claim 37 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
40. the device as claim 36 is characterized in that, described first dielectric film is formed on the part of this dummy pattern.
41. the device as claim 36 is characterized in that, described dummy pattern is arranged on one of the left side of bottom of this data line and right side, perhaps is arranged on the left and right sides simultaneously.
42. the device as claim 36 is characterized in that, described dummy pattern is made of the conductive material identical with this grid line with this grid.
43. the device as claim 36 is characterized in that, when taking place to disconnect defective on this data line, this connecting line makes the breaking part of the data line of this disconnection be electrically connected with this dummy pattern.
44. the device as claim 43 is characterized in that, welds by utilizing laser, this connecting line makes this breaking part of this data line be connected with this dummy pattern.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050057341 | 2005-06-29 | ||
| KR1020050057341 | 2005-06-29 | ||
| KR1020060044415 | 2006-05-17 |
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| CN1892327A true CN1892327A (en) | 2007-01-10 |
| CN100562782C CN100562782C (en) | 2009-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006100903140A Expired - Fee Related CN100562782C (en) | 2005-06-29 | 2006-06-29 | Liquid crystal display device and manufacture method thereof |
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| KR (1) | KR101234215B1 (en) |
| CN (1) | CN100562782C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064516A (en) * | 2014-07-17 | 2014-09-24 | 深圳市华星光电技术有限公司 | Array substrate and manufacturing method thereof |
| CN105607306A (en) * | 2014-11-18 | 2016-05-25 | 三星显示有限公司 | Method of manufacturing display substrate, repair method of display substrate and display substrate repaired by the repair method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8259249B2 (en) | 2009-10-12 | 2012-09-04 | Samsung Electronics Co., Ltd. | Display substrate, method of manufacturing the display substrate and display device having the display substrate |
| KR101794283B1 (en) | 2010-10-07 | 2017-11-07 | 삼성디스플레이 주식회사 | Thin film transtistor array panel and liquid crystal display |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000250436A (en) * | 1999-02-26 | 2000-09-14 | Nec Corp | Thin film transistor array and method of manufacturing the same |
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- 2006-05-17 KR KR1020060044415A patent/KR101234215B1/en active IP Right Grant
- 2006-06-29 CN CNB2006100903140A patent/CN100562782C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064516A (en) * | 2014-07-17 | 2014-09-24 | 深圳市华星光电技术有限公司 | Array substrate and manufacturing method thereof |
| WO2016008197A1 (en) * | 2014-07-17 | 2016-01-21 | 深圳市华星光电技术有限公司 | Array substrate and manufacturing method therefor |
| CN104064516B (en) * | 2014-07-17 | 2017-12-26 | 深圳市华星光电技术有限公司 | Array base palte and its manufacture method |
| US9859269B2 (en) | 2014-07-17 | 2018-01-02 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate and method of preparing the same |
| CN105607306A (en) * | 2014-11-18 | 2016-05-25 | 三星显示有限公司 | Method of manufacturing display substrate, repair method of display substrate and display substrate repaired by the repair method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070001792A (en) | 2007-01-04 |
| KR101234215B1 (en) | 2013-02-18 |
| CN100562782C (en) | 2009-11-25 |
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