CN1392615A - Luminous device and its producing method - Google Patents

Abstract

The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

Description

Light emitting device and manufacturing method thereof

1. Field of invention

The present invention relates to a method of manufacturing a semiconductor device, and in particular, to a light emitting device including a light emitting element such as an organic light emitting diode (OLED) formed on a plastic substrate. The present invention also relates to an OLED module in which an IC such as a controller is mounted on an OLED board. In this description, OLED panels and OLED modules are generally referred to as light emitting devices. The present invention also relates to such an electric appliance using such a light emitting device.

2. Related technologies

Recently, the technology of forming TFTs (Thin Film Transistors) on a substrate has been remarkably advanced, and research on its application to active matrix displays is continuing. In particular, a TFT using a polysilicon thin film can operate at a high speed because such a TFT has higher field-effect mobility than a TFT using a conventional amorphous silicon thin film. Thus, pixel control previously performed with off-substrate driver circuits can now be performed with driver circuits on the same substrate on which the pixels are formed.

Such an active matrix display includes various circuits or elements formed on the same substrate. Due to such a structure, this active matrix display has several advantages, such as low production cost, small size of the display, high yield, and high throughput.

In addition, active matrix light-emitting devices (hereinafter simply referred to as light-emitting devices) including OLEDs as self-luminous elements have been actively studied. Such light-emitting devices are also called organic EL displays (OELDs) or organic light-emitting diodes.

Such OLEDs are particularly suitable for reducing the thickness of light-emitting devices because they are self-illuminating and therefore highly visible, eliminating the need for a backlight that is essential for liquid crystal displays (LCDs). In addition, OLED has no limitation on viewing angle. Due to these advantages, light emitting devices employing OLEDs have attracted attention as display devices replacing CRTs or LCDs.

The OLED includes an organic compound (organic light-emitting material; such a layer will be referred to as an organic light-emitting layer hereinafter) layer, an anode layer, and a cathode layer. The organic light-emitting layer emits luminescence (electroluminescence) by applying an electric field between the anode and the cathode. The electroluminescence produced by organic compounds includes: luminescence (fluorescence) caused by returning from a singlet excited state to a ground state; and luminescence (phosphorescence) caused by returning from a triplet excited state to a ground state. The light-emitting device of the present invention can use any one of the above-mentioned light-emitting types, and can also use the above-mentioned two light-emitting types at the same time.

In this description, all layers between the OLED cathode and anode are generally defined as organic light-emitting layers. Specifically, light emitting layers, hole injection layers, electron injection layers, hole transport layers, electron transport layers and the like are all included in the broad category of organic light emitting layers. The structure of an OLED is basically an anode, a light-emitting layer, and a cathode in sequence. In addition to this structure, the structure of some OLEDs includes an anode, a hole injection layer, a light-emitting layer, and a cathode in order, and other OLED structures include an anode, a hole injection layer, a light-emitting layer, an electron transport layer, and a cathode in order. .

Such light emitting devices are expected to be suitable for various applications. Especially because of its small thickness, it is required to use this light-emitting device for portable equipment, which can reduce the weight. For this purpose, attempts have been made to form OLEDs on flexible plastic films.

The advantage of forming an OLED light-emitting device on a flexible substrate such as a plastic film is not only that it is small in thickness and light in weight, but also that it can be used for display on curved surfaces, shop windows, and the like. Therefore, it has a particularly wide application range and is not limited to portable devices.

In general, however, moisture or oxygen can pass through substrates made of plastic. Since moisture and oxygen will accelerate the aging of the organic light-emitting layer, the penetration of moisture and oxygen will shorten the life of the light-emitting device. As a conventional solution to this problem, an insulating film such as a silicon nitride film or a silicon oxynitride film is used between the plastic substrate and the OLED to prevent moisture and oxygen from entering the organic light-emitting layer.

But in general, substrates like plastic films are easily affected by heat. When an insulating film such as a silicon nitride film or a silicon oxynitride film is formed, a particularly high film formation temperature causes deformation of the substrate. Conversely, an extremely low film-forming temperature affects film quality, making it difficult to adequately prevent moisture and oxygen permeation.

In addition, if the thickness of an insulating film such as a silicon nitride film or a silicon oxynitride film is increased to prevent the penetration of moisture and oxygen, the stress will be increased accordingly, which will easily lead to cracking of the film. In addition, as the thickness increases, the insulating film is easily cracked when the substrate is bent.

Brief description of the invention

In view of the above problems, an object of the present invention is to provide a light emitting device including an OLED formed on a plastic substrate capable of slowing down aging caused by moisture or oxygen permeation.

The present invention forms a multilayer thin film on a plastic substrate to prevent oxygen and moisture from entering the organic light-emitting layer of the OLED (hereinafter it will be called an isolation film), and also forms a layer with a smaller stress than the isolation film (hereinafter it will be called a stress relaxation film) , sandwiched between the isolation membranes. In this specification, a thin film formed by laminating a separator film and a stress relaxation film is called a sealing film.

Specifically, two or more layers of isolation films (hereinafter referred to simply as isolation films) are made of inorganic materials. In addition, a stress relaxation film (hereinafter simply referred to as a stress relaxation film) including a resin is formed between the isolation films. OLEDs are then formed on these three or more insulating films. This OLED is sealed to form a light-emitting device.

The present invention stacks multiple layers of isolation films. In this way, even if one layer of these isolation films is cracked, the other isolation films can effectively prevent moisture and oxygen from entering the organic light-emitting layer. In addition, even if the quality of the separator is deteriorated due to the low film formation temperature, the laminated multi-layer separator can effectively block the entry of moisture and oxygen into the organic light-emitting layer.

Furthermore, a layer of stress relaxation film having a lower stress than the isolation film is sandwiched between the isolation films to reduce the total stress of the sealing film. Thus, cracking due to stress is less likely to occur on a multilayer separator in which a stress relaxation film is sandwiched between the separators, compared to a single layer separator of the same thickness.

Therefore, compared with a single-layer barrier film of the same thickness, the multi-layer film can effectively prevent moisture and oxygen from entering the organic light-emitting layer. In addition, such a multilayer separator is less prone to cracking due to stress.

Also, the lamination structure of the isolation film and the stress relaxation film enables better flexibility of the device, thereby preventing cracking due to substrate bending.

In addition, the OLED sealing film (hereinafter referred to as sealing film) formed on the substrate in the present invention may also have the above-mentioned multilayer structure. Utilizing this structure can effectively prevent moisture and oxygen from entering the organic light-emitting layer. In addition, it is possible to prevent cracks from occurring when the substrate is bent. As a result, a more flexible light-emitting device can be obtained.

Brief description of the drawings

In the attached picture:

1A-1C illustrate the manufacturing method of the light-emitting device in the present invention;

2A-2B illustrate the manufacturing method of the light-emitting device in the present invention;

3A-3D illustrate the manufacturing method of the light emitting device in the present invention;

4A-4C illustrate the manufacturing method of the light-emitting device in the present invention;

Figure 5A illustrates the appearance of the light-emitting device in the present invention; Figure 5B is an enlarged view of the FPC connection part; Figure 5C is a sectional view of the connection part;

Fig. 6A is a schematic diagram of the bending state of the light-emitting device in the present invention; Fig. 6B is its cross-sectional view;

Fig. 7 illustrates the cross-sectional structure of the part where the light-emitting device is connected to the FPC in the present invention;

8A-8D illustrate the manufacturing method of the light emitting device in the present invention;

9A-9C illustrate the manufacturing method of the light emitting device in the present invention;

10A-10C illustrate the manufacturing steps of TFT and OLED included in the light emitting device of the present invention;

11A-11C illustrate the manufacturing steps of TFT and OLED included in the light emitting device of the present invention;

12A-12B illustrate the manufacturing steps of TFT and OLED included in the light emitting device of the present invention;

Fig. 13 is a cross-sectional view of a light emitting device in the present invention;

Figure 14 illustrates how to remove the adhesive layer by water jet method;

Figure 15 illustrates how to form an organic light-emitting layer by sputtering;

Figure 16A is a top view of a pixel; Figure 16B is a circuit diagram of a pixel;

Fig. 17 is a schematic diagram of the circuit structure of the light emitting device;

Fig. 18A-18D respectively illustrate the electric appliance that adopts light-emitting device of the present invention; With

Fig. 19 illustrates a sealing film forming apparatus employing the roll-to-roll method.

preferred embodiment

Embodiment modes of the present invention will be described below with reference to the drawings. 1A-4C illustrate manufacturing steps of a pixel portion and a driver circuit.

Implementation Mode 1

A first adhesive layer 102 is formed with a thickness of 100-500 nm (300 nm in this embodiment mode) on a first substrate 101 in FIG. 1A using an amorphous silicon thin film. Although a glass substrate is used as the first substrate 101 in this embodiment mode, a quartz substrate, a metal substrate, or a ceramic substrate may also be used. Any material can be used as the first substrate 101 as long as it can withstand the processing temperature in the subsequent manufacturing steps.

As one method of forming the first adhesive layer 102, a low-pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method can be used. On the first adhesive layer 102, an insulating film 103 was formed with a thickness of 200 nm using a silicon oxide film. As a method of forming the insulating film 103, a low-pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method can be employed. The insulating film 103 serves to protect elements formed on the first substrate 101 when the first adhesive layer 102 is peeled off the first substrate 101 .

Next, elements are formed on the insulating film 103 (FIG. 1B). The element is a semiconductor element (usually a TFT) or an MIM element, and is used as a switching element such as a pixel or an OLED in an active matrix light emitting device. For passive light emitting devices, this element is an OLED. In FIG. 1B, a TFT 104a in a driving circuit 106, TFTs 104b and 104c in a pixel portion, and an OLED 105 are represented as elements.

Then, an insulating film 108 is formed to cover the above elements. After formation, the above-mentioned insulating film 108 preferably has a flat surface. The insulating film 108 is indispensable.

Next, as shown in FIG. 1C , the second substrate 110 is bonded to the first substrate 101 through the second adhesive layer 109 . In this embodiment mode, a plastic substrate is used as the second substrate 110 . Specifically, a resin substrate having a thickness of 10 micrometers or more made of PES (polyethersulfone), PC (polycarbonate), PET (polyethylene terephthalate) or PEN can be used.

As the material of the second adhesive layer 109, it is necessary to use such a material that provides sufficient room for selection when the first adhesive layer 102 is to be removed in a later step. In general, an insulating film made of resin can be used as the second adhesive layer 109 . Although polyimide is used as the material of the second adhesive layer 109 in this embodiment mode, acrylic, polyamide, or epoxy resin may also be used. When looking through the OLED, if the second adhesive layer 109 is on the viewer's side (user side of the light emitting device), a material is required to emit light.

Also, in this embodiment mode, two or more isolation films are formed on the second substrate 110 . A stress relaxation film is then formed between the two isolation films. As a result, a sealing film having a lamination structure of a separation film and a stress relaxation film is formed between the second substrate 110 and the second adhesive layer 109 .

For example, in this embodiment mode, a silicon nitride thin film is formed as the isolation film 111a by sputtering on the second substrate 110; a stress relaxation film 111b including polyimide is formed on the isolation film 111a; A silicon nitride film is formed as the isolation film 111c by sputtering on the stress relaxation film 111b. A layered film formed of the isolation film 111a, the stress relaxation film 111b, and the isolation film 111c is collectively referred to as the sealing film 111. The second substrate 110 on which the sealing film 111 is formed is then bonded to the element formed on the first substrate 101 through the second adhesive layer 109 .

It is sufficient to provide two or more layers of isolation molds. Silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, or aluminum silicon oxynitride (AlSiON) can be used as the material of the isolation film.

Since aluminum oxynitride has a high thermal conductivity, using it as an isolation film can effectively dissipate the heat generated in the component.

A light-transmitting resin may be used as the stress relaxation film 111b. Generally, polyimide, acrylic, polyamide, polyimide, epoxy resin or the like can be used. Resins other than the above resins may also be employed. In this embodiment mode, a stress relaxation film is formed using a polymerizable polyimide followed by baking.

The silicon nitride film was formed using argon at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. In addition to argon, nitrogen and hydrogen are used to form a thin film using silicon as a target. For silicon oxynitride, a thin film is formed by introducing argon at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. Using silicon as a target, a thin film is formed by introducing nitrogen, nitrogen dioxide, and hydrogen in addition to argon. Silicon oxide can also be used as a target.

The thickness of each isolation film 111a and 111c needs to be in the range of 50 nm to 3 microns. In this embodiment mode, a silicon nitride film is formed to a thickness of 1 micron.

The method of forming the isolation film is not limited to sputtering; the method of forming the thin film can be determined by those who realize the present invention. For example, the isolation film can be formed by LPCVD, plasma CVD, or the like.

The thickness of the stress relaxation film 111b should be between 200 nm and 2 microns. In this embodiment mode, a 1 µm polyimide film is formed as a stress relaxation film.

For the isolation films 111a and 111c and the stress relaxation film 111b, it is necessary to select a material which should provide sufficient room for selection when removing the first adhesive layer 102 in a later step.

Due to the steps shown in Figure 1A, the OLED can be completely isolated from the air. As a result, aging of the organic light-emitting material due to oxygen can be completely suppressed, significantly improving the reliability of the OLED.

Next, as shown in FIG. 2A , the first substrate 101 , the second substrate 110 , all components formed therebetween, and the entire film are exposed to a gas including halogen fluoride, thereby removing the first adhesive layer 102 . In this embodiment mode, chlorine trifluoride (ClF ₃ ) is used as the halogen fluoride and nitrogen is used as the diluent gas. Argon, helium or neon can also be used as diluent gas. The flow rates of the two gases can be set to 500 sccm (8.35×10 ^-6 m ³ /s), and the reaction pressure can be set to 1-10 Torr (1.3×10 ² -1.3×10 ³ Pa). The treatment temperature may be room temperature (usually 20-27 degrees Celsius).

In this case, the silicon film is etched, but the plastic film, glass substrate, polyimide film, and silicon dioxide film are not etched. Specifically, after being exposed to chlorine trifluoride, the first adhesive layer 102 is selectively etched away so that it is completely etched away. Since the active layer of the TFT similarly made of a silicon layer is not exposed to the outside, the active layer is not exposed to chlorine trifluoride and thus not corroded.

In this embodiment mode, the first adhesive layer 102 is gradually etched away from its exposed edge portion. When the first adhesive layer 102 is completely removed, the first substrate 101 and the insulating film 103 are completely separated. These TFTs and OLEDs each including multilayer thin films are left on the second substrate.

The size of the first substrate 101 is preferably not too large, because the corrosion starts from the edge of the first adhesive layer 102, so the time required to completely remove the first adhesive layer 102 becomes longer as the size of the substrate increases . So in this embodiment mode, the diagonal of the first substrate 101 should be 3 inches or less (preferably 1 inch or less).

After the first substrate 101 is peeled off in this way, the third adhesive layer 113 is formed in the manner shown in FIG. 2B . The third substrate 112 is then bonded to the second substrate 110 through the third adhesive layer 113 . In this way, one plastic substrate is used as the third substrate 112 . Specifically, a resin substrate having a thickness of 10 µm or more, such as a PES (polyethersulfone) substrate, PC (polycarbonate), PET (polyethylene terephthalate), or PEN, can be used as the third substrate. Substrate 112.

An insulating film made of resin (generally polyimide, acrylic, polyamide, or epoxy) may be used as the third adhesive layer 113 . Viewed from the OLED, when the third adhesive layer 113 is on the viewer's side (light emitting device user's side), a material capable of transmitting light is required.

In this embodiment mode, two or more isolation films are formed on the third substrate 112 . A stress relaxation film is then made between the two isolation films. As a result, a sealing film having a lamination structure of a separation film and a stress relaxation film is formed between the second substrate 112 and the third adhesive layer 113 .

For example, in this embodiment mode, a silicon nitride thin film is formed as the isolation film 114a on the third substrate 110 by sputtering; a stress relaxation film 114b including polyimide is formed on the isolation film 114a; A silicon nitride film is formed as the isolation film 114c by sputtering on the stress relaxation film 114b. The layered film formed by the isolation film 114 , the stress relaxation film 114 b and the isolation film 114 c is collectively referred to as the sealing film 114 . Then the third substrate 112 on which the sealing film 114 is formed is bonded to the element fixed on the second substrate 110 through the third adhesive layer 113 .

It is sufficient to provide two or more layers of isolation films. The material of the isolation film may be silicon nitride, silicon oxynitride, aluminum oxide, chlorine nitride, aluminum oxynitride or aluminum silicon oxynitride (AlSiON).

Since aluminum oxynitride has a high thermal conductivity, using it as an isolation film can effectively dissipate the heat generated by the component.

A resin capable of transmitting light may be used as the stress relaxation film 114b. Generally, polyimide, acrylic, polyamide, polyimide, epoxy resin or the like can be used. In this embodiment mode, the stress relaxation mold is formed by using heat-polymerizable polyimide followed by baking.

The silicon nitride film is formed by introducing argon at a substrate temperature of 150 degrees Celsius at a sputtering pressure of about 0.4 Pa. The thin film is formed by using silicon as a target and introducing nitrogen and hydrogen in addition to argon. Silicon oxynitride is formed by introducing argon at a substrate temperature of 150 degrees Celsius at a sputtering pressure of about 0.4 Pa. To form a thin film, silicon is used as a target, and nitrogen, nitrogen dioxide, and hydrogen are introduced in addition to argon. Silica can also be used as a target.

The thickness of the isolation films 114a and 114c should be between 50 nm and 3 microns. In this embodiment mode, the thickness of the silicon nitride film is 1 micron.

The method of forming the isolation film is not limited to sputtering; the thin film forming method can be determined by those who realize the present invention. For example, the isolation film can be formed by LPCVD, plasma CVD, or the like.

The thickness of the stress relaxation film 114b should be between 200 nm and 2 microns. In this embodiment mode, the thickness of the polyimide film used as the stress relaxation film is 1 micron.

In this way, a flexible light emitting device between two layers of flexible substrates 110 and 112 can be obtained. Using the same material as the second substrate 110 and the third substrate 112, the substrates 110 and 112 would have the same coefficient of thermal expansion. As a result, the substrates 110 and 112 are less susceptible to stress strains caused by temperature changes.

A light-emitting device fabricated according to this embodiment mode allows fabrication of elements such as TFTs using semiconductors without being affected by the thermal resistance of the plastic substrate. In this way, a light emitting device with very good performance can be obtained.

Although the first adhesive layer 102 is made of amorphous silicon and removed with a gas including halogen fluoride in this embodiment mode, the present invention is not limited to this structure. Which material to use for the first adhesive layer 102 and which removal method to use can be determined by the person implementing the present invention. It is very important to find a suitable material and removal method for the first adhesive layer 102, so as to ensure that the substrates, components and films that do not need to be removed except for the first adhesive layer 102 are not removed, and at the same time, the first adhesive layer can be removed. layer 102 without affecting the operation of the light emitting device. It is also very important that the material of the first adhesive layer 102 is not removed in a step other than that of the first adhesive layer 102 .

For example, an organic material may be used as the first adhesive layer 102, which is irradiated with a laser beam to be evaporated in whole or in part. In addition, this material should be able to absorb the energy of the laser beam, for example, it is colored, or a black material (such as a resin material with melanin), so that when the second harmonic of the YAG laser is used, only the first sticky The composite layer 102 can effectively absorb the laser beam energy. A material that does not evaporate during the heat treatment of the element forming step is used as the first adhesive layer 102 .

Each of the first, second and third adhesive layers may be single layer or multilayer. An amorphous silicon film or a DLC film may be used between the adhesive layer and the substrate.

The first adhesive layer 102 may be formed of an amorphous silicon thin film, and the first substrate may be peeled off by irradiating a laser beam onto the first adhesive layer 102 in a later step. In this case, in order to facilitate the peeling of the first substrate, it is preferable to use an amorphous silicon film including a large amount of hydrogen. Hydrogen included in the amorphous silicon thin film evaporates when irradiated with the laser beam, so that the first substrate can be easily peeled off.

To obtain a laser beam, a pulsed or continuous wave excimer laser, a YAG laser or a YVO ₄ laser can be used. A laser beam is irradiated to the first adhesive layer through the first substrate, thereby evaporating only the first adhesive layer and peeling it off the first substrate. Therefore, the first substrate is preferably a substrate that can transmit laser beams, such as a glass substrate, a quartz substrate, etc., and its thickness is greater than that of the second and third substrates.

In the present invention, in order for the laser beam to transmit through the first substrate, the laser beam and the first substrate should be properly selected. For example, when using a quartz substrate as the first substrate, use a YAG laser (fundamental (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm)) Or an excimer laser (wavelength: 308nm) forms a straight beam, which can pass through a quartz substrate. The excimer laser beam cannot pass through the glass substrate. Therefore, when using a glass substrate as the first substrate, use the fundamental wave, the second harmonic or the third harmonic of the YAG laser, preferably the second harmonic (wavelength 532 nm), to form a straight beam that can pass through Glass substrate.

A method (typically water jet method) of spraying a liquid (pressurized liquid or gas) onto the first adhesive layer to separate the first substrate may also be used.

If the first adhesive layer is made of an amorphous silicon film, the first adhesive layer can be removed with hydrazine.

The method of separating the first substrate by etching described in Japanese Patent Application No. Hei 8-288522 may also be used. Specifically, a silicon oxide film (SOG) was used as the first adhesive layer, which was then removed with hydrogen fluoride. In this case, it is very important that the silicon oxide film that does not need to be removed has a fine structure by sputtering or CVD, so that when the first adhesion layer is removed by hydrogen fluoride, the silicon oxide film can provide sufficient There is room for choice.

With such a structure, a highly reliable light emitting device can be obtained even with a very thin substrate, specifically, 50 to 300 microns, preferably 150 to 200 microns. Forming components on such thin substrates is difficult with conventional fabrication equipment. However, since this element is bonded to the first substrate, manufacturing equipment using thin substrates can be used without changing existing equipment.

With a sealing film including a multi-layer insulating film, deterioration due to moisture and oxygen penetration can be effectively prevented. In addition, it is possible to prevent cracks from occurring when the substrate is bent. As a result, a more flexible light-emitting device can be obtained.

Implementation Mode 2

Another embodiment mode of the present invention different from the first embodiment mode will be described below.

In FIG. 3A, a first adhesive layer 202 having a thickness of 100-500 nm (300 nm in this embodiment mode) is formed on a first substrate 201 using an amorphous silicon thin film. Although a glass substrate is used as the first substrate 201 in this embodiment mode, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may also be used. The first substrate 201 may be any material as long as it can withstand heat treatment in subsequent processing steps.

The method of forming the first adhesive layer 202 may be a low pressure thermal CVD method, a plasma CVD method, a sputtering method or an evaporation method. On the first adhesive layer 202, an insulating film 203 is formed with a thickness of 200 nm using a silicon oxide film. The method of forming the insulating film 203 may be a low-pressure thermal CVD method, a plasma CVD method, a sputtering method, or an evaporation method. The insulating film 203 is used to protect the components formed on the first substrate 201 when the first adhesive layer 202 is peeled off from the first substrate 201 .

Next, an element is formed on the insulating film 203 (FIG. 3B). The element here is a semiconductor element (generally a TFT) or a MIM element, which is used as a switching element of a pixel in an active matrix light emitting device, or an OLED or the like. For passive light emitting devices, this element is an OLED. In FIG. 3B, the TFT 204a in the driving circuit 206, the TFTs 204b and 204c in the pixel portion, and the OLED 205 are taken as an example of elements.

An insulating film 208 is then formed to cover the above elements. The insulating film 208 preferably has a flat surface after formation. The insulating film 208 is not essential.

As shown in FIG. 3C , the next step is to bond the second substrate 210 to the first substrate 201 through the second adhesive layer 209 . Although a glass substrate is used as the second substrate 210 in this embodiment mode, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may also be used. Any material can be used for the second substrate 210 as long as the material can withstand heat treatment in subsequent processing steps.

The material of the second adhesive layer 209 must be able to provide sufficient options when removing the first adhesive layer 202 in subsequent steps. In addition, for the second adhesive layer 209, the third adhesive layer bonding the third substrate must not be removed when the second adhesive layer is removed, so as not to cause the third substrate to peel off. In this embodiment mode, a polyamic acid solution described in Laid-Open Japanese Patent Application No. Hei 5-315630, which is a previous product of polyimide resin, is used. Specifically, when the polyamic acid solution is used to form the second adhesive layer 209 with a thickness of 10-15 microns, it is a kind of unhardened resin, and the second substrate 210 and the interlayer insulating film 208 are bonded by heat and pressure. glued together. Heat is then applied to temporarily harden the resin.

The material of the second adhesive layer 209 in this embodiment mode is not limited to polyamic acid solution. Any material can be used, as long as it can provide enough room for selection when removing the first adhesive layer 202 in subsequent steps, and the third adhesive layer bonding the third substrate will not be removed when removing the second adhesive layer 209 , not to cause the third substrate to fall off. It is very important that the material of the second adhesive layer 209 is not removed in steps other than removing the second adhesive layer 209 .

As shown in FIG. 3D , the next step is to expose the first substrate 201 , the second substrate 210 and all components and the entire film formed therebetween to a gas including halogen fluoride, and remove the first adhesive layer 202 . In this embodiment mode, chlorine trifluoride ( _ClF3 ) is used as the halogen fluoride and nitrogen is used as the diluent gas. Argon, helium or neon can also be used as diluent gas. The flow rate of both gases can be 500 sccm (8.35×10 ^-6 m ³ /S), and the reaction pressure can be 1-10 Torr (1.3×10 ² -1.3×10 ³ Pa). The treatment temperature may be room temperature (generally 20-27 degrees Celsius).

In this case, the silicon film is etched, but the plastic film, glass substrate, polyimide film, and silicon oxide film are not etched. Specifically, exposure to chlorine trifluoride gas selectively corrodes the first adhesive layer 202 and completely peels it off. Since the active layer of the TFT also formed of the silicon film is not exposed, the active layer is not exposed to the chlorine trifluoride gas and thus is not corroded.

In this embodiment mode, the first adhesive layer 202 is gradually etched from its exposed edge portion. After the first adhesive layer 202 is completely removed, the first substrate 201 and the insulating film 203 are separated from each other. After the first adhesive layer 202 is removed, the TFT and the OLED each including a thin film stack remain on the second substrate 210 .

It is not optimal to use a bulky substrate as the first substrate 201, because the first adhesive layer 202 is gradually etched away from its edges, and the time required to completely remove the first adhesive layer 202 increases with its The size becomes larger and elongated. Therefore, the diagonal of each base 201 in this embodiment mode should be 3 inches or less (preferably 1 inch or less).

After removing the first substrate 201 in this way, a third adhesive layer 213 is formed, as shown in FIG. 4A . The third substrate 212 is then bonded to the second substrate 212 through a third adhesive layer 213 . In this embodiment mode, a plastic substrate is used as the third substrate 212 . Specifically, a resin substrate having a thickness of 10 micrometers or more can be used as the third substrate 212, such as a substrate made of PES (polyethersulfone), PC (polycarbonate), PET (polyethylene terephthalate), etc. ester) or PEN.

An insulating film made of resin (typically polyimide, acrylic, polyamide, or epoxy) may be used as the third adhesive layer 213 . If the third adhesive layer 213 is on the viewer's side (user's side of the lighting device) when viewed from the OLED, this material should transmit light.

Furthermore, in this embodiment mode, two or more isolation films are formed on the third substrate 212 . Then, a stress relaxation film is created between the two isolation films. As a result, a sealing film having a layered structure of the isolation film and the stress relaxation film is formed between the third substrate 212 and the third adhesive layer 213 .

For example, in this embodiment mode, a silicon nitride thin film is formed as an isolation film 214a on the third substrate 212 by sputtering; a stress relaxation film 214b including polyimide is formed on the isolation film 214a. ; On the stress relaxation film 214b, a silicon nitride film is formed by sputtering as the isolation film 214c. The layered film formed by the isolation film 214 a , the stress relaxation film 214 b , and the isolation film 214 c is collectively referred to as the sealing film 214 . The third substrate 212 on which the sealing film 214 is formed is then bonded to the element fixed to the second substrate 210 through the third adhesive layer 213 .

It is sufficient to provide two or more layers of isolation films. The material of the isolation film may be silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride or aluminum silicon oxynitride (AlSiON).

Due to the high thermal conductivity of silicon oxynitride, using it as an isolation film can effectively dissipate the heat generated by the component.

A light-transmitting resin can be used as the stress relaxation film 214b. Generally, polyimide, acrylic, polyamide, polyimide, epoxy resin and the like can be used. In this embodiment mode, a stress relaxation film is formed by using propylene followed by baking.

A silicon nitride film was formed by introducing argon at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. The thin film is formed by using silicon as a target and introducing nitrogen and hydrogen in addition to argon. For silicon oxynitride, a film is formed by introducing argon at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. The thin film is formed by using silicon as a target while introducing nitrogen, nitrogen dioxide, and hydrogen in addition to argon. Silicon oxide can also be used as a target.

The thickness of the isolation films 214a and 214c should be between 50 nm and 3 microns. In this embodiment mode, the thickness of the silicon nitride film is 1 micron.

The forming method of the isolation film is not limited to sputtering; what kind of thin film forming method to use can be determined by those who realize the present invention. For example, the isolation film can be formed by LPCVD, plasma CVD, or the like.

The thickness of the stress relaxation film 214b should be between 200 nm and 2 microns. In this embodiment mode, the thickness of the acrylic film is 1 micron.

Next, as shown in FIG. 4B , the second adhesive layer 209 is peeled off the second substrate 210 . Specifically, the second adhesive layer 209 is removed by immersing in water for about 1 hour, thereby peeling off the second substrate 210 .

It is very important to select a peeling method according to the material of the second adhesive layer 209, the material of the element or film, the base material, and the like.

Next, as shown in FIG. 4C , on the side where the second substrate 210 is peeled off, that is, on the side opposite to the third substrate through the OLED, an isolation film in two or more layers is provided. A stress relaxation film is then provided between the two isolation films.

For example, in this embodiment mode, on the side of the insulating film 208 opposite to the side contacting the second substrate 210, a silicon nitride film is formed by sputtering as the isolation film 215a; A stress relaxation film 215b of imide; a silicon nitride thin film is formed as an isolation film 215c on the stress relaxation film 215b by sputtering. The isolation film 215 a , the stress relaxation film 215 b , and the isolation film 215 c are collectively referred to as the sealing film 215 .

It is sufficient to provide two or more layers of isolation films. The material of the isolation film may be silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride or aluminum silicon oxynitride (AlSiON).

Due to the high thermal conductivity of silicon oxynitride, using it as an isolation film can effectively dissipate the heat generated by the component.

A light-transmitting resin may be used as the stress relaxation film 215b. Generally, polyimide, acrylic, polyamide, polyimide, epoxy resin or the like can be used. In this embodiment mode, the stress relaxation film is formed by using propylene, followed by baking.

A silicon nitride film was formed by introducing argon at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. The thin film is formed by introducing nitrogen and hydrogen in addition to argon, using silicon as a target. For silicon oxynitride, a film was formed by introducing argon at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. The thin film is formed by introducing nitrogen, nitrogen dioxide, and hydrogen in addition to argon, using silicon as a target. Silicon oxide can also be used as a target.

The thickness of the isolation films 215a and 215c should be in the range of 50 nm to 3 microns. In this embodiment mode, the thickness of the silicon nitride film is 1 micrometer.

The method of forming the isolation film is not limited to sputtering; what kind of thin film forming method to use can be determined by those who realize the present invention. For example, a thin film can be formed by LPCVD, plasma CVD, or the like.

The thickness of the stress relaxation film 215b should be between 200 nm and 2 microns. In this embodiment mode, the thickness of the acrylic film is 1 micron.

In this way a flexible light-emitting device can be obtained with a single plastic substrate.

Since an element such as a TFT can be formed using a semiconductor without being limited by the thermal resistance of a plastic substrate, a high-performance light emitting device can be manufactured according to the present invention.

Although the first adhesive layer 202 is formed of amorphous silicon in the first embodiment mode of the present invention and removed with a gas including halogen fluoride, the present invention is not limited to this structure. The material and removal method for the first adhesive layer 202 can be determined by the person implementing the present invention. The material and removal method of the first adhesive layer 202 can ensure that the base, other adhesive layers, components and films that do not need to be removed except the first adhesive layer 202 will not be removed when the first adhesive layer 202 is removed , so as not to affect the work of the light emitting device, which is very important. The material of the first adhesive layer 202 is such that it is not removed during steps other than the first adhesive layer 202 removal step.

Although polyamic acid solution is used as the second adhesive layer 209 and then removed with water, which is a previous product of polyimide resin, the structure of the present invention is not limited thereto. The material and method of removal of the second adhesive layer 209 can be determined by those practicing the invention. The material and removal method of the second adhesive layer 209 can ensure that the base, other adhesive layers, elements and films that do not need to be removed except the second adhesive layer 209 are not removed when the second adhesive layer is removed, thereby It is very important that the operation of the lighting device is not affected. It is also important that the material of the second adhesive layer 209 is such that it is not removed in steps other than the step of removing the second adhesive layer 209 .

For example, as the first and second adhesive layers 202 and 209, an organic material that can be fully or partially evaporated by irradiation with a laser beam can be used. In addition, materials capable of absorbing laser beam energy should be used, such as colored materials or black materials (such as resin materials including melanin), so that only the first and second adhesive layers 202 and 209 efficiently absorb the energy of the laser beam. The first and second adhesive layers 202 and 209 which are not evaporated during the heat treatment in the element forming step are used.

Each of the first, second, and third adhesive layers may be a single layer or a multilayer. An amorphous silicon film or a DLC film may be provided between the adhesive layer and the substrate.

The first adhesive layer 202 or the second adhesive layer 209 can be formed with an amorphous silicon film, which can be irradiated by a beam of laser light on the first adhesive layer 202 or the second adhesive layer 209 in a later step. A basal peel. In this case, in order to facilitate the peeling of the first substrate, it is preferable to use an amorphous silicon film including a large amount of hydrogen. Hydrogen included in the amorphous silicon is evaporated under irradiation with a laser beam, so that this substrate can be easily peeled off.

The laser beam can be pulsed oscillation or continuous wave excimer laser, YAG laser or YVO ₄ laser. When peeling off the first substrate, a laser beam is irradiated onto the first adhesive layer through the first substrate, so that only the first adhesive layer is evaporated, and the first substrate is peeled off. When the second substrate is to be peeled off, a laser beam is irradiated onto the second adhesive layer through the second substrate, so that only the second adhesive layer is evaporated, and the second substrate is peeled off. Therefore, the first or second substrate is preferably a substrate thicker than the third substrate, which at least allows the laser beam to pass through, and generally it can transmit light, such as a glass substrate, a quartz substrate and the like.

In the present invention, in order for the laser beam to pass through the first or second substrate, it is necessary to correctly select the type of the laser beam and the type of the first substrate. For example, when using a quartz substrate as the first substrate, use a YAG laser (fundamental (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm)) Or an excimer laser (wavelength: 308nm) forms a straight beam, which can pass through a quartz substrate. The excimer laser beam cannot pass through the glass substrate. Therefore, when using a glass substrate, use the fundamental wave, second harmonic or third harmonic of the YAG laser, preferably the second harmonic (wavelength 532 nm), to form a straight beam that can pass through the glass substrate.

A method of, for example, spraying a liquid (pressurized fluid or gas) onto the first adhesive layer to separate the first substrate (usually a water jet method) may also be used.

If the first adhesive layer is made of an amorphous silicon film, the first adhesive layer can be removed by hydrogen.

Alternatively, the first substrate may be separated by the etching method described in Japanese Patent Application Laid-Open No. Hei 8-288522. Specifically, a silicon oxide film (SOG) may be used as the first or second adhesive layer, which is then removed with hydrogen fluoride. In this case, it is very important that the silicon oxide film that does not need to be removed has a fine structure by sputtering or CVD, so that the silicon oxide film can provide sufficient options when removing the first or second adhesion layer with hydrogen fluoride. room.

With such a structure, even if a very thin substrate is used as the third substrate, specifically, 50-300 micrometers, preferably 150-200 micrometers, a highly reliable light-emitting device can be obtained. Forming components on such thin substrates is difficult using conventional fabrication equipment. But since the elements are formed by bonding to the first and second substrates, manufacturing equipment using thin substrates can be used without changing the equipment.

With a sealing film including a multilayer insulating film, aging due to moisture or oxygen penetration can be effectively mitigated. It also prevents cracking when the substrate is bent. As a result, a more flexible light emitting device can be obtained.

In the first and second embodiment modes, both the anode and the cathode of the OLED can be used as pixel electrodes.

implementation plan

Embodiments of the present invention will be described below.

Implementation 1

In Embodiment 1, the appearance of the light emitting device in the present invention and how it is connected to the FPC are described.

FIG. 5A is an example of a top view of the light-emitting device of the present invention described in Embodiment Mode 1. FIG. Both the second substrate 301 and the third substrate 302 are flexible plastic substrates. The pixel portion 303 and the driver circuits (source-side driver circuit 304 and gate-side driver circuit 305 ) are between the second substrate 301 and the third substrate 302 .

An example is shown in FIG. 5A in which the source side driver circuit 304 and the gate side driver circuit 305 are formed on the substrate where the pixel portion 303 is formed at the same time. However, the driver circuits represented by the source-side driver circuit 304 and the gate-side driver circuit 305 may be formed on a substrate different from that on which the pixel portion 303 is formed. In this case, the driving circuit may be connected to the pixel portion 303 through an FPC or the like.

The numbering and layout of the source-side driving circuit 304 and the gate-side driving circuit 305 may be different from the structure shown in FIG. 5A .

Reference numeral 306 denotes an FPC through which a signal from an IC including a controller or a source voltage is applied to the pixel portion 303 , the source side driver circuit 304 and the gate side driver circuit 305 .

FIG. 5B is an enlarged view of a portion surrounded by a dotted line in FIG. 5A, where the FPC 306 and the second substrate 301 are connected to each other. Fig. 5C is a sectional view along the line A-A' in Fig. 5B.

Between the second substrate 301 and the third substrate 302 there are wires 310 capable of supplying signals or source voltages to the pixel portion 303 , the source side driver circuit 304 and the gate side driver circuit 305 . Terminal 311 is prepared for FPC 306.

Various thin films such as a sealing film and an insulating film between the second substrate 301 and the extended wire 310 and the second substrate 301 are partially removed with a laser beam or the like, thereby providing the contact hole 313 . Therefore, a plurality of extending wires 310 are exposed through the contact holes 313 , and are respectively connected to the terminals 311 through the anisotropic conductive resin 312 .

Although the extending wire 310 is partially exposed from the second substrate 301 in this example of FIGS. 5A-5C , the present invention is not limited thereto. Extended wires can also be partially exposed from the third substrate 302 .

FIG. 6A illustrates the bent state of the light emitting device shown in FIG. 5A. Since both the second substrate and the third substrate of the light emitting device in Embodiment Mode 1 are flexible, this light emitting device can be bent at a certain angle as shown in FIG. 6A. Thus, this light emitting device has a wide range of uses, as it can be used on curved surfaces, in shop windows for display. Furthermore, not only the light emitting device described in Embodiment Mode 1 but also the light emitting device described in Embodiment Mode 2 can be bent.

FIG. 6B is a cross-sectional view of the light emitting device shown in FIG. 6A. A plurality of elements are formed between the second substrate 301 and the third substrate 302 . TFTs 303a, 303b and 303c and OLED 304 are representatively drawn here. A dotted line 309 represents a center line between the second substrate 301 and the third substrate 302 .

Between the second substrate 301 and the plurality of components are an isolation film 306a, a stress relaxation film 306b, and an isolation film 306c (together they are called a sealing film 306). Between the third substrate 302 and the plurality of elements are an isolation film 307a, a stress relaxation film 307b, and an isolation film 307c (collectively called a sealing film 307).

In addition, there is a second adhesive layer 305 between the sealing film 306 and the plurality of elements, and a third adhesive layer 308 between the sealing film 307 and the plurality of elements.

Next, the connection of the light emitting device described in Embodiment Mode 2 to the FPC will be described. Fig. 7 is a sectional view illustrating a portion where the light emitting device described in Embodiment Mode 2 is connected to an FPC.

The third substrate 401 has wires 403 on it. A sealing film 402 is formed so as to cover the wires 403 and various elements on the third substrate 401 . Although the sealing film 402 in FIG. 7 is a single layer film, this sealing film actually includes a multilayer sealing film with a stress relaxation film in between.

Various thin films such as the sealing film 402 and the insulating film between the third substrate 401 and the extended wiring 403 are removed by a laser beam or the like to produce a contact hole. Therefore, the extended wire 403 is exposed through the contact hole, and is electrically connected to the terminal 405 included in the FPC 404 through the anisotropic conductive resin 406.

Although the extending wires are partially exposed from the sealing film 402 in FIG. 7 in this example, the present invention is not limited thereto. The extended wires may be partially exposed from one side of the third substrate.

Embodiment 2

An example of Embodiment Mode 1 in the present invention is described in Embodiment 2.

In FIG. 8A, a silicon oxide film (SOG) is used to form a first adhesive layer 502 on a first substrate 501 with a thickness of 100-500 (300 nm in this embodiment) nm. Although a glass substrate is used as the first substrate 501 in this embodiment, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may also be used. Any material can be used for the first substrate 501 as long as it can withstand the processing temperature in subsequent manufacturing steps.

The method of forming the SOG film is to add the iodine solution to the SOG solution by spin coating, and then dry it to release the iodine therein. The SOG thin film is then formed in a heat treatment at about 400 degrees Celsius. In this embodiment, a SOG thin film was formed with a thickness of 100 nm. The method of forming the SOG thin film as the first adhesive layer 502 is not limited to the above-mentioned method. Both organic SOG and inorganic SOG can be used as SOG; any SOG can be used as long as it can be removed with hydrogen fluoride in a subsequent step. It is very important that the silicon oxide film that does not need to be removed has a fine structure formed by sputtering or CVD methods, so as to provide sufficient options when removing the first adhesion layer with hydrogen fluoride.

In the next step, an aluminum protective film is formed on the first adhesive layer 502 by low pressure thermal CVD, plasma CVD, sputtering or evaporation. In this embodiment, a protective film 503 is formed with a thickness of 200 nm using aluminum on the first adhesive layer 502 by sputtering.

Although aluminum is used as the material of the protective film 503 in this embodiment, the present invention is not limited thereto. It is very important that such material is not removed when the first adhesive layer 502 is removed, and in other processing steps than the step of removing the protective film 503 . Furthermore, it is also very important that such material does not cause other films and substrates to be removed during the step of removing the protective film 503 . The protective film 503 is used to protect the components formed on the first substrate 501 from being peeled off the first substrate 501 when the first adhesive layer 502 is removed.

Next, an element is formed on the protective film 503 (FIG. 8B). In FIG. 8B, TFTs 504a and 504b in the driving circuit are used as representative elements.

In this embodiment, TFT 504a is an n-channel TFT and TFT 504b is a p-channel TFT. TFTs 504a and 504b form a CMOS.

The TFT 504a includes a first electrode 550 formed on the protective film 503, an insulating film 551 covering the first electrode 550, a semiconductor film 552 in contact with the insulating film 551, an insulating film 553 in contact with the semiconductor film 552, and an insulating film 553 in contact with the insulating film 553. contact with the second electrode 554 .

The TFT 504b includes a first electrode 560, an insulating film 551 covering the first electrode 560, a semiconductor film 562 in contact with the insulating film 551, an insulating film 553 in contact with the semiconductor film 562, and a second electrode in contact with the insulating film 553 564.

A terminal 570 is formed simultaneously with the first electrode 550 on the protective film 503 .

An insulating film 565 is then formed to cover the TFTs 504a and 504b. A wire 571 in contact with the semiconductor film 552 and the terminal 570, a wire 572 in contact with the semiconductor films 552 and 562, and a wire 573 in contact with the semiconductor film 562 are formed through contact holes formed through the insulating films 565, 551, and 553.

An insulating film 574 is formed to cover the wires 571 , 572 , and 573 and the insulating film 565 . Although not shown in the figure, an OLED is formed on the insulating film 574 .

An insulating film 508 is then formed to cover these elements. The insulating film 508 preferably has a flat surface after formation. It is not necessary to form the insulating film 508 .

The next step is to bond the second substrate 510 to the first substrate via the second adhesive layer 509 as shown in FIG. 8C . A plastic substrate is used as the second substrate 510 in this embodiment. Specifically, for example, a resin substrate having a thickness of 10 nm or more, PES (polyethersulfone), PC (polycarbonate), PET (polyethylene terephthalate), or PEN can be used as the second substrate 510 .

The material of the second adhesive layer 509 should be able to provide sufficient options when removing the first adhesive layer 502 in subsequent steps. In general, an insulating film made of resin can be used. Although polyimide is used in this embodiment, acrylic, polyamide or epoxy resins may also be used. When the second adhesive layer 590 is placed on the viewer's side (the user's side of the lighting device) as viewed from the OLED, this material should transmit light.

Also, in this embodiment, two or more isolation films are formed on the second substrate 510 . A stress relaxation film is then formed between the two isolation films. As a result, a separation film and a stress relaxation film constituting a sealing film are formed between the second substrate 510 and the second adhesive layer 509 .

For example, in this embodiment, a silicon nitride thin film is formed as the isolation film 51 by sputtering on the second substrate 510; a stress relaxation film 511b including polyimide is formed on the isolation film 511a; A silicon nitride thin film is formed as an isolation film 511c on the stress relaxation film 511b by sputtering. The isolation film 511a, the stress relaxation film 511b, and the isolation film 511c are collectively called a sealing film 511 . Then, the second substrate 510 forming the sealing film 511 is bonded to the element formed on the first substrate through the second adhesive layer 509 .

It is sufficient to provide two or more layers of isolation films. The material of the isolation film may be silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride or aluminum silicon oxynitride (AlSiON).

A resin capable of transmitting light may be used as the stress relaxation film 511b. Generally, polyimide, acrylic, polyamide, polyimide, epoxy resin and the like can be used. In this embodiment, the stress relaxation pattern is formed by using heat polymerizable polyimide followed by baking.

A silicon nitride film was formed by introducing argon at a sputtering pressure of 0.4 Pa and a substrate temperature of 150°C. When forming a thin film, silicon is used as a target, and nitrogen and hydrogen are simultaneously introduced in addition to argon. For silicon oxynitride, a thin film was formed by introducing argon at a sputtering pressure of 0.4 Pa and a substrate temperature of 150°C. When forming a thin film, silicon is used as a target, and nitrogen, nitrogen dioxide, and hydrogen are simultaneously introduced in addition to argon. Silicon oxide can also be used as a target.

The thickness of each isolation film 511a and 511c should be between 50 nm and 3 microns. In this embodiment, the thickness of the silicon nitride film is 1 micron.

The method of forming the isolation film is not limited to the sputtering method; what kind of thin film forming method to use can be determined by those who realize the present invention. For example, the thin film can be formed by LPCVD method, plasma CVD method, or the like.

The thickness of the stress relaxation film 511b should be between 200 nm and 2 microns. In this embodiment, the thickness of the polyimide film is 1 micron.

For the first and second isolation layers 511a and 511c and the stress relaxation layer 511b, the materials used should provide sufficient options when removing the first adhesive layer 502 in a subsequent step.

Due to the process shown in Figure 8C, the OLED can be completely isolated from the air. As a result, aging of the organic light-emitting material due to oxidation can be sufficiently delayed, thereby significantly improving the reliability of the OLED.

Next, as shown in FIG. 8D, the first adhesive layer 502 is removed using hydrogen fluoride. In this embodiment, the first and second substrates 501 and 510, all components formed therebetween and the entire film are immersed in buffered hydrofluoric acid (HF/NH ₄ F = 0.01-0.2, eg 0.1), and the first Adhesive layer 502 .

Since the silicon oxide film that should not be removed is formed with a fine film by sputtering or CVD, only the first adhesive layer is removed with hydrogen fluoride.

For this embodiment, the first adhesive layer 502 is gradually etched away from the exposed edge portions. When the first adhesive layer 502 is completely removed, the first substrate 501 and the protective film 503 are isolated from each other. After the first adhesive layer 502 is removed, TFTs and OLEDs each including many thin films remain on the second substrate 510 .

Using a large substrate as the first substrate 501 is not optimal because as the size of the first substrate becomes larger, it takes longer and longer to completely remove the first adhesive layer 502 from the edge. Therefore, the diagonal of the first base 501 in this embodiment should be 3 inches or less (preferably 1 inch or less).

The next step is to remove the protective film 503, as shown in FIG. 9A. In this embodiment, the protective film 503 made of aluminum is removed by wet etching using a phosphoric acid type etchant, thereby exposing the terminal 570 and the first electrodes 550 and 560.

Then, as shown in FIG. 9B, an anisotropic third adhesive layer 513 made of conductive resin is formed. Through the third adhesive layer 513 , the third substrate 512 is bonded to a side where the terminal 570 and the first electrodes 550 and 560 are exposed.

In this embodiment, a plastic substrate is used as the third substrate 512 . Specifically, a resin substrate having a thickness of 10 microns or thicker, for example, a substrate made of PES (polyethersulfone), PC (polycarbonate), PET (polyethylene terephthalate) or PEN, Used as the third substrate 512.

The third adhesive layer 513 can be an insulating film made of resin (generally, polyimide, acrylic, polyamide or epoxy resin). If viewed from the OLED, the third adhesive layer 513 is on the viewer's side, and this material must transmit light.

In this embodiment, two or more layers of isolation films are formed on the third substrate 512 . Then, a stress relaxation film is formed between the two isolation films. As a result, between the third substrate 512 and the third adhesive layer 513, a sealing film of a lamination structure formed of a separation film and a stress relaxation film is formed.

For example, in this embodiment, a silicon nitride film is formed as the isolation film 514a by sputtering on the third substrate 512; a stress relaxation film 514b including polyimide is formed on the isolation film 514a; A silicon nitride thin film is formed as an isolation film 514c on the stress relaxation film 514b by sputtering. A laminated film formed of the isolation film 514 a , the stress relaxation film 514 b , and the isolation film 514 c is collectively referred to as the sealing film 514 . Then, the third substrate 512 on which the sealing film 514 is formed is bonded to the element fixed on the second substrate 510 through the third adhesive layer 513 .

It is sufficient to provide two or more layers of isolation films. The material of the isolation film may be silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride or aluminum silicon oxynitride (AlSiON).

A light-transmitting resin can be used for the stress relaxation film 51b. Generally, polyimide, acrylic, polyamide, polyimide, epoxy resin or the like can be used. In this embodiment, the stress relaxation mold is formed by using heat polymerizable polyimide followed by baking.

A silicon nitride film was formed by introducing argon at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. In addition to argon, nitrogen and hydrogen are introduced, and silicon is used as a target to form a thin film. As for silicon oxynitride, a film is formed by introducing a pressure at a sputtering pressure of about 0.4 Pa and a substrate temperature of 150 degrees Celsius. Thin film formation is achieved by introducing nitrogen, nitrogen dioxide, and hydrogen other than argon, and using silicon as a target. Silicon oxide can also be used as a target.

The thickness of each isolation film 514a and 514c should be between 50 nm and 3 microns. In this embodiment, the thickness of the silicon nitride film is 1 micron.

The method of forming the isolation film is not limited to sputtering; the thin film forming method can be determined by those who realize the present invention. For example, the thin film can be formed by LPCVD method, plasma CVD method, or the like.

The thickness of the stress relaxation film 514b should be between 200 nm and 2 microns. In this embodiment, the thickness of the polyimide film is 1 micron.

Then, with laser beam irradiation, a contact hole is formed through the third substrate 512 and the sealing film. Aluminum is evaporated on the third substrate 512 where the contact holes are formed and around them, and terminals 580 and 581 are formed on the corresponding surfaces of the third substrate 512 to be electrically connected to each other. The method of forming the terminals 580 and 581 is not limited to the above structure.

The terminal 580 formed on the third substrate 512 is connected to the terminal 570 which is formed simultaneously with the first electrodes 550 and 560 through the third adhesive layer 513 .

In this way a flexible light emitting device between the plastic substrates 510 and 512 can be obtained. The second substrate 510 and the third substrate 512 are made of the same material, and the substrates 510 and 512 have the same coefficient of thermal expansion. As a result, the substrates 510 and 512 are hardly affected by temperature changes.

As shown in FIG. 9C , the fourth one made of the terminal 581 and the terminal 591 included in the FPC 590 will not be in contact with the third adhesive layer 513 but will be connected with the third substrate 512 and made by anisotropic conductive resin. Adhesive layers 592 are interconnected.

The light-emitting device manufactured according to the present invention allows the use of semiconductor components (such as TFT) without being limited by the thermal resistance of the plastic substrate. This makes it possible to obtain a lighting device with particularly high performance.

Although the adhesive layer 502 in this embodiment is made of SOG and finally removed with hydrogen fluoride, the present invention is not limited to this structure. The material and method of removal of the first adhesive layer 502 can be determined by those practicing the present invention. The material and removal method of the first adhesive layer 502 should ensure that when the first adhesive layer 502 is removed, the substrate, components and other films other than the first adhesive layer 502 that do not need to be removed will not be removed, and at the same time it will not affect The work of the luminous device. In addition, it is also very important that the material of the first adhesive layer 502 is not removed in steps other than the step of removing the first adhesive layer 502 .

For example, an organic material partially or fully evaporated by laser beam irradiation may be used as the first adhesive layer 502 . In addition, materials capable of absorbing laser beams such as colored materials or black materials (such as resin materials including black pigments) should be used, so that only the first adhesive layer 502 can be activated when the second harmonic wave from the YAG laser is used. Effectively absorbs the energy of the laser beam. The first adhesive layer 502 which is not evaporated during the heat treatment in the element forming step is used.

The first, second and third adhesive layers can all be single-layer or multi-layer. An amorphous silicon film or a DLC film may be used between the adhesive layer and the substrate.

The first adhesive layer 502 may be formed with an amorphous silicon thin film, and in a later step, the first substrate may be peeled off by irradiating the first adhesive layer 502 with a laser beam. In this case, in order to facilitate the peeling of the first substrate, an amorphous silicon film including a large amount of hydrogen is used. Hydrogen in amorphous silicon is evaporated by laser beam irradiation, thereby easily peeling off the first substrate.

The laser beam can be a pulsed or continuous wave excimer laser, a YAG laser or a YVO ₄ laser. A laser beam is irradiated on the first adhesive layer through the first substrate to evaporate only the first adhesive layer, thereby peeling off the first substrate. Therefore, the first substrate is preferably a substrate with a thickness greater than that of the second and third substrates, which can at least transmit the irradiated laser light, and is usually a light-transmitting substrate, such as a glass substrate, a quartz substrate, and the like.

In the present invention, in order for the laser beam to pass through the first substrate, it is necessary to properly select the types of the laser beam and the first substrate. For example, when using a quartz substrate as the first substrate, use a YAG laser (fundamental (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm)) Or an excimer laser (wavelength: 308nm) forms a straight beam, which can pass through a quartz substrate. The excimer laser beam cannot pass through the glass substrate. Therefore, when a glass substrate is used as the first substrate, the fundamental wave, the second harmonic wave or the third harmonic wave, preferably the second harmonic wave (wavelength: 532 nm) of the YAG laser is used to form a straight beam, which can pass through Glass substrate.

In addition, a method of separating the first substrate by spraying a fluid (pressurized fluid or gas) to the first adhesive layer (usually a water jet method) may be used, or a method combining the method may be used.

If the first adhesive layer is made of an amorphous silicon film, the first adhesive layer can be removed with hydrazine.

Alternatively, the method of separating the first substrate by etching described in JP 8-288522 A may be employed. Specifically, a silicon oxide film (SOG) was used as the first adhesive layer, which was removed with hydrogen fluoride. At this time, since the silicon oxide film that does not need to be removed has a fine structure by sputtering or CVD, it is very important that the silicon oxide film can provide sufficient options when removing the first adhesive layer with hydrogen fluoride.

With such a structure, even if very thin substrates are used for the second and third substrates, specifically 50-300 microns, preferably 150-200 microns, a highly reliable light-emitting device can still be obtained. It is also difficult to form components on such thin substrates using known fabrication equipment. However, since the components are bonded to the first substrate, the device can be fabricated using a thick substrate without changing the device.

With the sealing film including the multi-layer insulating film, aging caused by moisture or oxygen permeation can be effectively mitigated. In addition, cracking occurs when the substrate is bent. As a result, a more flexible light emitting device can be obtained.

Embodiment 3

Using this embodiment, a method of forming TFTs of driver circuits (source signal line driver circuit and gate signal line driver circuit) around the pixel portion and the pixel portion will be described in detail. In this embodiment, only the CMOS circuit is briefly introduced as a basic unit of the driving circuit.

First, as shown in FIG. 10A, an amorphous silicon film is used to form a first substrate on a glass, such as No. 7059 and No. 1737 glasses of CORNING, barium silicate glass or borosilicate glass. The adhesive film 5001 has a thickness of 100-500 nanometers (preferably 300 nanometers). The first adhesive film 5001 can be formed by a low-pressure CVD method, a plasma method, a sputtering method, or an evaporation method. The first adhesive film 5001 is formed by sputtering in this embodiment.

Next, a base film 5002 formed of an insulating film such as a silicon oxide film, a silicon oxynitride film, or a silicon oxynitride film is formed on the first adhesive film 5001 . The base film 5002 can prevent the elements formed on the substrate 5000 from being peeled off from the substrate 5000 when the first adhesive layer 5001 is removed. For example, a silicon oxynitride film is formed from SiH ₄ , NH ₃ and N ₂ O to a thickness of 10-200 nm (preferably 50-100 nm) by plasma CVD. Similarly, SiH ₄ and N ₂ O are used to stack a silicon nitride oxide film with a thickness of 50-200 nanometers (preferably 100-150 nanometers) on it. In this embodiment, this base film 5002 has two layers, but it is also possible to form a single-layer film using one of the above insulating films, or to form a multilayer film of two or more layers using the above insulating films.

A crystalline semiconductor film is obtained by laser crystallization or a known thermal crystallization method on an amorphous semiconductor film, and island-like semiconductor layers 5003-5006 are formed from such a crystalline semiconductor film. The thickness of these island-like semiconductor layers 5003-5006 is between 25-80 nanometers (preferably 30-60 nanometers). The material of the crystalline semiconductor film is not limited in any way, but the crystalline semiconductor film is preferably formed of silicon, silicon germanium (SiGe) alloy, or the like.

When producing crystalline semiconductor thin films by laser crystallization, excimer lasers, YAG lasers, and YVO ₄ lasers of pulse type or continuous emission type are used. When using these lasers, it is preferable to use a method in which the laser beam emitted from the excitation light device is converged into a straight line by an optical system, and then irradiated onto the semiconductor thin film. It is up to the operator to select the appropriate crystallization conditions. When an excimer laser is used, the pulse oscillation frequency is set to 300 Hz, and the laser energy density is set to 100-400 millijoules per square centimeter (generally 200-300 millijoules per square centimeter). When using a YAG laser, the pulse oscillation frequency is preferably set to 30-300kHz, and its second harmonic is used, and the laser energy density is preferably 300-600 millijoules per square centimeter (generally 350-500 millijoules per square centimeter centimeter). A laser beam converged into a straight line with a width of 100-1000 microns, such as 400 microns, is irradiated onto the entire surface of the substrate. At this time, the overlapping ratio of the straight laser beams is set to 50-90%.

Next, a gate insulating film 5007 covering the island-like semiconductor layers 5003-5006 is formed. The gate insulating film 5007 is made of silicon, with a thickness of 40-150 nanometers, and is formed by CVD or sputtering. In this embodiment, the gate insulating film 5007 is formed from silicon oxynitride with a thickness of 120 nm. However, the gate insulating film is not limited to such a silicon oxynitride film, but may be an insulating film including other things, a single layer or a multilayer. For example, when using a silicon oxide film, mix TEOS and O ₂ by plasma CVD, the reaction pressure is 40Pa, the substrate temperature is 300-400 degrees Celsius, and the high-frequency (13.56MHz) power density of 0.5-0.8W/ ^cm2 is used discharge. Thus, a silicon oxide film can be formed by discharge. At an annealing temperature of 400-500 degrees Celsius, the silicon oxide film manufactured in this way can obtain good characteristics of the gate insulating film.

A first conductive film 5008 and a second conductive film 5009 forming a gate electrode are formed on the gate insulating film 5007 . In this embodiment, Ta is used to form the first conductive film 5008 to a thickness of 50-100 nm, and W is used to form the second conductive film 5009 to a thickness of 100-300 nm.

The Ta film is formed by sputtering, and the Ta target is sputtered by Ar. At this time, when an appropriate amount of Xe and Kr is added to Ar, the internal stress of the Ta thin film is released, thereby preventing the thin film from peeling off. The resistance of the α-phase Ta film is about 20 µΩcm, and this Ta film can be used as a gate electrode. However, the resistance of the β-phase Ta film is about 180 µΩcm, and this Ta film is not suitable for use as a gate electrode. The tantalum nitride with a crystal structure close to the α-phase structure of the Ta film and a thickness of 10-50 nanometers is formed in advance as the base of the Ta film. When the α-phase Ta film is formed, the α-phase Ta film can be easily obtained.

Using tungsten as a target, a tungsten thin film is formed by sputtering. In addition, a tungsten thin film can be formed using tungsten hexafluoride (WF ₆ ) by thermal CVD. In any case, to use this thin film as a gate electrode, its resistance must be reduced. It is necessary to set the resistance of the tungsten thin film to be equal to or less than 20 μΩcm. When the crystal grains of tungsten become larger, the resistance of the tungsten thin film can be reduced. However, when there are many impurities in the tungsten film, such as oxygen, etc., crystallization can be prevented and the resistance will increase. Therefore, for the sputtering method, the tungsten film can be formed by using a tungsten target with a purity of 99.9999% or 99.99%, and paying sufficient attention not to mix impurities from the gas phase into the tungsten film when forming the film. This enables a resistance of 9-20 μΩcm to be achieved.

In this embodiment, the first conductive film 5008 is formed using Ta, and the second conductive film 5009 is formed using tungsten. However, the present invention is not limited to this case. Each of these conductive thin films can also be made of Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material mainly composed of these elements. Also, a semiconductor thin film represented by a polysilicon thin film doped with an impurity such as phosphorus can also be used. Examples of combinations other than those described in this embodiment include: a combination of the first conductive film 5008 formed of tantalum nitride (TaN), and the second conductive film formed of W; the first conductive film 5008 is formed of tantalum nitride ( TaN), the second conductive film 5009 is a combination formed of Al; and the first conductive film 5008 is a combination of tantalum nitride (TaN), and the second conductive film 5009 is formed of Cu.

Next, a template is formed with a resist, and the first etching is performed to form electrodes and wires. In this embodiment, ICP (Inductively Coupled Plasma) etching is used, and CF ₄ and Cl ₂ are mixed with a gas for etching. Under a pressure of 1 Pa, 500 W of RF (13.56 MHz) power was applied to the coil-type electrode to generate plasma. Simultaneously, 100 W of RF (13.56 MHz) power was applied to the substrate side (sample level) to apply a self-bias voltage that was substantially negative. When CF ₄ and Cl ₂ are mixed, W film and Ta film are etched to the same extent.

Under the above etching conditions, the end portions of the first conductive layer and the second conductive layer are tapered by applying a bias voltage to the substrate side by making a template formed of a resist into an appropriate shape. The angle of the awl portion is 15 to 45 degrees. It is better to extend the etching time by 10-20% so that the etching can be completed without leaving residues on the gate insulating film. Since the selectivity ratio of the silicon oxynitride film to the W film is 2-4 (usually 3), the exposed surface of the silicon oxynitride film is etched away by 20-50 nm by the overetching process. Thus, the first etching process forms the conductive layers 5011-5016 (first conductive layers 5011a-5016a and second conductive layers 5011b-5016B) of the first shape formed by the first and second conductive layers. Areas not covered by the conductive layers 5011-5016 of the first shape are etched by about 20-50 nm on the gate insulating film 5007 (see FIG. 10A).

Then, the first doping is performed to add impurity elements to obtain an n-type conductor. The doping method may be an ion doping method or an ion implantation method. The conditions of the ion doping method are that the dose is 1×10 ¹³ -5×10 ¹⁴ atoms per square centimeter, and the electron voltage is 60-100keV. An element belonging to Group 15, usually phosphorus (P) or arsenic (As) is used as an impurity element to obtain an n-type conductor. But phosphorus (P) is used here. At this time, the conductive layers 5011-5015 are used as impurity element templates to form n-type conductors, and the first impurity regions 5017-5025 are formed by a self-alignment method. Impurities giving n-type conductors are added to the first impurity regions 5017-5025 at a density of 1x1020-1x1021 atoms per cubic centimeter. (See Figure 10B)

The next step is to perform a second etching process without removing the resist template, as shown in FIG. 10C. The W film was selectively etched with CF ₄ , Cl ₂ and O ₂ . A second etching process is used to form the second shape of conductive layers 5026-5031 (first conductive layers 5026a-5031a and second conductive layers 5026b-5031b). The regions of the conductive layers 5026-5031 of the second shape not covered by the gate insulating film 5007 are further etched by about 20-50 nm, thereby forming a thin region.

The corrosion reaction of W film corrosion using _CF4 and _Cl2 mixed gas and Ta film can be realized by using the generated vapor pressure and ions and reaction products. When comparing the vapor pressures of fluorine and chloride of W and Ta, the vapor pressure of WF ₆ which is the fluoride of W is particularly high, and the vapor pressures of other WCl ₅ , TaF ₅ , and TaCl ₅ are equal to each other. Therefore, the W thin film and Ta film were etched with the mixed gas of CF ₄ and Cl ₂ . However, when an appropriate amount of O ₂ is added to this mixed gas, CF ₄ and O ₂ react to form CO and F, thus producing a large number of F atomic groups or F ions. As a result, the corrosion rate of the W film whose fluoride vapor pressure is very high increases. On the contrary, the increase of Ta film etching rate is very small when F is increased. Since Ta is easily oxidized compared to W, the surface of the Ta film was oxidized by adding _O2 . Since there is no reaction of any Ta oxide with fluorine or chloride, the corrosion rate of the Ta film is further reduced. Therefore, there is a possibility that the etching rate of the W film and the Ta film may be different, and the etching rate of the W film may be higher than that of the Ta film.

As shown in FIG. 11A, the second doping is performed. In this case, by reducing the dose to be lower than that of the first doping process, the amount of impurity elements used to give n-type conductivity is less than that of the first doping process, and the acceleration voltage is higher . For example, the acceleration voltage is set to 70-120keV, and the dose is 1×10 ¹³ atoms per square centimeter. Thus, a new impurity region is formed in the first impurity region formed in the island-like semiconductor layer shown in FIG. 10B. When doping, the conductive layers 5026-5030 of the second shape are used as templates for impurity elements, and doping is performed so that the impurity elements are also added to the regions below the first conductive layers 5026a-5030a. This forms the third impurity regions 5032-5041. The third impurity regions 5032-5036 include phosphorus (P), and the density gradient is relatively small, matching the thickness gradient of the tapered portion of the first conductive layer 5026a-5030a. In the semiconductor layers overlapping the tapered portions of the first conductive layers 5026a-5030a, the impurity density is slightly lower at the center than in the edge portions of the tapered portions of the first conductive layers 5026a-5030a. But this difference is very small, and the entire semiconductor layer has almost the same impurity density.

Then a third etching treatment is performed, as shown in FIG. 11B. Using CHF ₆ as the etching gas, reactive ion etching (RIE) technology is employed. Through the third etching process, the tapered portion of the first conductive layer 5026a-5031a is partially etched, reducing the area where the first conductive layer overlaps the semiconductor layer. Thus formed are the third shape conductive layers 5037-5042 (first conductive layers 5037a-5042a and second conductive layers 5037b-5042b). At this time, the region of the gate insulating film 5007 not covered by the conductive layer 5037-5042 of the third shape is further etched and thinned to about 20-50 nanometers.

The third impurity regions 5032-5036 are formed by the third etching process. The third impurity regions 5032a-5036a overlap the first conductive layers 5037a-5041a, respectively, and the second impurity regions 5032b-5036b are each formed between the first impurity region and the third impurity region.

As shown in FIG. 11C, a fourth impurity region 5043-5054 having a conductivity type opposite to that of the first one is formed in the island-like semiconductor layers 5004 and 5006 to form a p-channel TFT. The conductive layers 5038b and 5041b of the third shape are used as templates for impurity elements to form impurity regions in a self-aligned manner. At this point, the island-like semiconductor layers 5003 and 5005 for forming the n-channel TFT and the wiring portion 5042 are all covered with the resist template 5200 . The impurity regions 5043-5054 have been doped with different densities of phosphorus. The impurity regions 5043-5054 are doped with diborane (B ₂ H ₆ ) by ion doping, so that there is more diborane than phosphorus in each region, and each region includes a density of 2×10 ²⁰ -2×10 ²¹ atoms per cubic centimeter of impurity elements.

Through the above steps, impurity regions are formed in the island-like semiconductor layer. Conductor layers 5037-5041 of the third shape covering the island-like semiconductor layer are used as gate electrodes. The portion illustrated by the numeral 5042 is used as the island-like source signal line.

After removing the resist template 5200, the impurity elements added to the island-like semiconductor layer are activated to control the conductivity type. This process is accomplished by thermal annealing using a furnace for in-furnace annealing. A laser annealing method or a rapid thermal annealing method (RTA method) may also be used. In the thermal annealing method, the process is carried out at a temperature of 400-700 degrees Celsius, usually 500-600 degrees Celsius, in nitrogen, where the oxygen concentration is equal to or less than 1 ppm, preferably equal to or less than 0.1 ppm. . In this embodiment, the heat treatment is performed at a temperature of 500 degrees Celsius for 4 hours. When the conductive material used in the conductive layers 5037-5042 of the third shape cannot withstand heat, it is preferable to activate after forming an interlayer insulating film (using silicon as a basic composition) in order to protect wires and the like.

In addition, the island-like semiconductor layer is hydrogenated by performing heat treatment at a temperature of 300-450 degrees Celsius for 1-12 hours in a gas including 3-100% hydrogen. This step is to terminate the unsaturated bonds of the semiconductor layer with thermally activated hydrogen. Plasma hydrogenation (using plasma-activated hydrogen) can be used as another means of hydrogenation.

Next, as shown in FIG. 12A, a first interlayer insulating film 5055 is formed using a silicon nitride oxide film with a thickness of 100-200 nm. A second interlayer insulating film is formed using an organic insulating material on the first interlayer insulating film. Then, a contact hole is formed through the first interlayer insulating film 5055 , the second interlayer insulating film 5056 and the gate insulating film 5007 . Each wire (including connecting wires and signal wires) 5057-5062 and 5064 is patterned. Then, the pattern of the pixel electrode 5063 connected to the connection wire 5062 is formed, and it is formed.

A thin film made of an organic resin is used as the second interlayer insulating film 5056 . Polyimide, polyamide, acrylic, BCB, etc. can be used as this organic resin. Specifically, since the second interlayer insulating film 5056 is mainly used for planarization, acrylic capable of flattening the film is best. In this embodiment, an acrylic film is formed to a thickness sufficient to level the difference caused by the TFT. Its film thickness is preferably 1-5 microns (better set to 2-4 microns).

In the formation process of the contact holes, contact holes reaching the n-type impurity regions 5017, 5018, 5021 and 5023 or p-type impurity regions 5043-5054, contact holes reaching the wire 5042, and contact holes reaching the power line (not shown in the figure) are formed. drawn), and a contact hole (not shown) reaching the gate electrode.

In addition, a three-layer structure is formed according to the required shape, which is used as wires (including connecting wires and signal wires) 5057-5062, 5064. In this three-layer structure, a Ti film with a thickness of 100 nm, an aluminum film including Ti with a thickness of 300 nm, and a Ti film with a thickness of 150 nm were formed by the sputtering method. But another conductive film can also be used.

In this embodiment, an ITO film having a thickness of 110 nm was formed as a pixel electrode, and a pattern was formed thereon. The pixel electrode 5063 is in contact with the connection electrode 5062 and overlaps with the connection wire 5062 to form a contact. In addition, a transparent conductive film obtained by mixing 2 to 20% of zinc oxide (ZnO) and indium oxide can also be used. This pixel electrode 5063 becomes the anode of the OLED (see FIG. 12A).

As shown in FIG. 12B, an insulating film (in this embodiment, a silicon oxide film) comprising silicon is formed to a thickness of 500 nm. A third interlayer insulating film 5065 is formed, with openings corresponding to the positions of the pixel electrodes 5063 . When forming the opening, the side wall of the opening can be easily tapered by wet etching. When the sidewalls of the openings are not smooth enough, the performance degradation of the organic light-emitting layer caused by the unevenness becomes a serious problem.

Next, an organic light-emitting layer 5066 and a cathode (MgAg electrode) 5067 are successively formed by vacuum evaporation without exposure to air. The thickness of the organic light-emitting layer 5066 is 80-200 nm (generally 100-120 nm), and the thickness of the cathode 5067 is 180-300 nm (generally 200-250 nm).

In this process, organic light emitting layers corresponding to red, green, and blue pixels are sequentially formed. In this case, since the organic light emitting layer is not sufficiently resistant to solution, it is necessary to form the organic light emitting layer for each color separately instead of using photolithography. Therefore, it is preferable to cover a part with a metal template, except required pixels, so that the organic light emitting layer is selectively formed only in required parts.

In other words, a template is first made to cover all parts except the pixels corresponding to red, and the organic light-emitting layer that emits red light is selectively formed with this template. The next step is to make a template that covers all but the pixels corresponding to green, and use this template to selectively form the organic light-emitting layer that emits green light. Next, a template is made to cover all parts except the pixels corresponding to blue light, and the organic light-emitting layer that emits blue light is selectively formed with this template. A different template is used here, but the same template can also be reused.

A system forming three kinds of OLEDs corresponding to RGB is employed here. However, it is also possible to use a system that combines OLEDs that emit white light and color filters, OLEDs that emit blue light or blue-green light that combine fluorescent substances (fluorescence color conversion layer: CCM), and use transparent electrodes, etc. to convert the corresponding R, G , A system in which the OLED of B overlaps with the cathode.

A known material can be used as the organic light emitting layer 5066 . It is best to consider the driving voltage when using organic materials. For example, it is preferable to use a four-layer structure including a hole injection layer, a hole transport layer, a light emitting layer and an electron injection layer as the organic light emitting layer.

A cathode 5067 is formed next to the pixels (pixels on the same line), including switching TFTs whose gate electrodes are connected to the same gate signal line with a metal template. This embodiment uses MgAg as the cathode 5067, but is not limited thereto. Other materials can also be used as the cathode 5067.

Finally, a planarization film 5068 formed of a silicon nitride film is formed with a thickness of 300 nanometers. Actually, the planarization film 5068 plays a role of protecting the organic light-emitting layer 5066 from moisture and the like. However, the reliability of the OLED can be further improved by forming the planarization film 5068 .

This completes the state shown in Fig. 12B. Although not illustrated in the drawings, according to the manufacturing method of Embodiment Mode 1, the second substrate providing the sealing film and the planarizing film 5068 are bonded with the second adhesive layer. In addition, the following steps can be performed in accordance with the method shown in Embodiment Mode 1. According to the manufacturing method of Embodiment Mode 2, the second substrate to be the sealing film is bonded to the planarizing film 5068 by the second adhesive layer. In addition, the following steps may be performed in accordance with the method of Embodiment Mode 2.

In the process of forming the light-emitting device in this embodiment, for the sake of simple circuit structure and convenient process, the source signal line is formed of Ta and W, which are the materials of the gate electrode, and the gate signal line is formed of Al, which is source and drain wire material.

The light-emitting device in this embodiment has high reliability, except for the pixel portion, by arranging optimally structured TFTs in the driving circuit portion, improving the operating characteristics. In addition, in the crystallization process, by adding a metal catalyst such as Ni, the crystallinity is also improved. In this way, the driving frequency of the source signal line driving circuit can reach 10 MHz or even higher.

First, a TFT whose structure can reduce hot carrier injection so as not to lower the operating speed as much as possible is used as an n-channel TFT of a CMOS circuit forming a driver circuit. Here, the driving circuit includes a shift register, a buffer, a level shifter, a latch in row-sequential driving, and a transfer gate in dot-sequential driving.

For this embodiment, the active layer of an n-channel TFT includes a source region, a drain region, an overlapping LDD (Lov region) overlapping with a gate electrode through a gate insulating film, an offset LDD region not overlapping with a gate electrode through a gate insulating film ( Loff region) and channel formation region.

The performance degradation caused by hot carrier injection in p-channel TFTs of CMOS circuits is almost negligible. Therefore, there is no need to form an LDD region in such an n-channel TFT. However, similar to the n-channel TFT, the LDD region can be used as a hot carrier protection measure.

In addition, when a CMOS circuit is used in this drive circuit, and current flows bidirectionally through the channel forming region, that is, the role of the source region and the drain region in the CMOS circuit is reversed, the n-channel TFT constituting the CMOS circuit is preferably formed LDD region, so that the channel formation region is sandwiched between the LDD region. As an example thereof, a transmission gate used in dot sequential driving is given. When a CMOS circuit required to reduce the off-state current as much as possible is used in the driving circuit, it is preferable that the n-channel TFT forming the CMOS circuit has a Lov region. A transfer gate used in point sequential driving can also be used as an example of it.

In fact, when making a light-emitting device according to Embodiment Mode 1 or 2, it is best to use a layer of protective film (layered film, UV-repairable resin film) to encapsulate (seal) it, and the protective film has a good Airtight, does not allow outgassing and a translucent sealing film, in order to prevent exposure to the outside air. In this case, the reliability of the OLED is improved by filling the inside of the sealing film with an inert gas, placing a diluent material such as barium oxide.

Furthermore, after enhancing airtightness by packaging or the like, this device is made a product with a connector (flexible printed circuit: FPC). Connectors are used to connect with external signal terminals. A device in this state is ready for shipment and is referred to herein as a self-launching device.

Furthermore, according to the process in this embodiment, the number of light-shielding films required to manufacture a light-emitting device can be reduced. The result is a reduced process, resulting in lower costs and higher yields.

It is to be noted that embodiments 1-2 can be combined into embodiment 3.

Embodiment 4

In Embodiment 4, the structure of a light emitting device employing an inverse stagger type TFT in the present invention is described.

Fig. 13 is a cross-sectional view of a light emitting device in the present invention. A sealing film 601 is formed on the flexible third substrate 601 . The sealing film 601 includes an isolation film 601a, a stress relaxation film 601b, and an isolation film 601c.

A sealing film 608 is formed on the flexible second substrate 606 . The sealing film 608 includes an isolation film 608a, a stress relaxation film 608b, and an isolation film 608c.

TFTs, OLEDs, and other elements are formed between the sealing films 601 and 608 . In this embodiment, the TFT 604a included in the driver circuit 610 and the TFTs 604b and 604c included in the pixel portion 611 are taken as a representative example.

OLED 605 includes a pixel electrode 640, an organic light emitting layer 641 and a cathode 642.

The TFT 604a includes gate electrodes 613 and 614, an insulating film 612 formed to be in contact with the gate electrodes 613 and 614, and a semiconductor film 615 formed to be in contact with the insulating film 612. The TFT 604b includes gate electrodes 620 and 621, an insulating film 612 formed to be in contact with the gate electrodes 620 and 621, and a semiconductor film 622 formed to be in contact with the insulating film 612. The TFT 604c includes a gate electrode 630 , an insulating film 612 formed to be in contact with the gate electrode 630 , and a semiconductor film 631 formed to be in contact with the insulating film 612 .

Although in this example an inverse stagger type TFT is used in the light-emitting device manufactured according to Embodiment Mode 1, the structure of the present invention is not limited thereto. An inverse stagger type TFT can be used in the light-emitting device manufactured according to Embodiment Mode 2.

Embodiment 4 can be freely combined with Embodiment 1.

Embodiment 5

In Embodiment 5, an example of removing an adhesive layer by jetting a fluid is described.

As a method of spraying fluid, it is possible to spray a high-pressure water stream from a nozzle to an object (called a water jet method), or to spray a high-pressure air stream to an object. In the case of the water jet method, organic solvents, acid solutions, or alkaline solutions can be used instead of water. For gas flow, air, nitrogen, carbon dioxide gas, or rare gas can be used. In addition, plasmas obtained from these gases can also be used. It is very important to select the appropriate fluid based on the material of the film and substrate that is not desired to be removed and the material of the adhesive layer so that the adhesive layer can be removed without removing these films and substrates.

As the adhesive layer, a porous silicon layer or a silicon layer to which hydrogen, oxygen, nitrogen, or a rare gas is added can be used. In the case of using a porous silicon layer, the amorphous silicon film or the polycrystalline silicon film can be anodized to enhance their porosity.

Figure 14 illustrates how to remove the adhesive layer with a water jet. Between the substrates 603 and 606 there is an OLED 604. The OLED 604 is covered with an insulating film 603. Between the insulating film 603 and the base 606 is a sealing film 609 including a multilayer insulating film.

An insulating film 603 and an adhesive layer 606 are provided between the substrate 603 and the OLED 604. The adhesive layer 606 is in contact with the substrate 603 . Although only OLEDs are represented in FIG. 14 , TFTs and other elements are often used between insulating films 605 and 603 .

The adhesive layer 606 has a thickness of 0.1-900 microns (preferably 0.5-10 microns). In Embodiment 5, an SOG film having a thickness of 1 micron is used as the adhesive layer 606 .

Fluid 607 is sprayed from nozzle 608 towards adhesive layer 606 . In order to effectively spray the fluid 607 onto the entire exposed portion of the adhesive layer 606 , it is recommended that the adhesive layer 606 rotate along a centerline perpendicular to the substrate 601 when spraying the fluid, as shown in FIG. 14 .

A fluid 607 with a pressure of 1×10 ⁷ -1×10 ⁹ Pa (preferably 3×10 ⁷ -5×10 ⁸ Pa) is sprayed from a nozzle 608 to the exposed portion of the adhesive layer 606 . As the sample rotates, fluid 607 is sprayed against the exposed surface of adhesive layer 606 .

When the fluid sprayed from the nozzle 608 sprays to the adhesive layer 606, the adhesive layer is broken due to its fragility, and then removed, or removed by chemical methods. As a result, the adhesive layer 606 is removed, separating the substrate 603 and the insulating film 605 from each other. If separated by breaking the bonding layer 606, the remaining bonding layer can be removed by etching.

The fluid 607 can be water, organic solvent, acid solution or alkaline solution. Air, nitrogen, carbon dioxide gas or rare gases can also be used. Plasmas obtained from these gases can also be used.

Embodiment 5 can be used in combination with Embodiments 1-4.

Embodiment 6

In this embodiment, the extrinsic luminescence quantum efficiency can be significantly improved by using an organic luminescent material, with which light can be emitted using phosphorescence from triplet excitons. Therefore, the power consumed by the OLED can be reduced, the lifetime of the OLED can be prolonged, and the weight of the OLED can be reduced.

Enhancing the quantum efficiency of external luminescence with triplet excitons in the following report (T.Tsutsui, C.Adachi, S.Saito, Phosphorus Chemical Processes in Organic Molecular Systems, edited by K.Honda (Elsvier Sci.Pub., Tokyo, 1991 ) on page 437).

The molecule of the organic luminescent material (coumarin pigment) reported in the above article can be expressed as: chemical formula 1

(M.A.Baldo, D.F.O Brien, Y.You, A.Shoustikov, S.Sibley, M.E.Thompson, S.R.Forrest, Natural Impurities 395 (1998) p. 151)

The molecular formula of the EL material (Pt composite) reported in the above article is expressed as: chemical formula 2

(M.A.Baldo, S.Lamansky, P.E.Burrows, M.E.Thompson, S.R.Forrest, Applied Physics Communications, 75 (1999) p. 4) (T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T. . Watanabe, T. Tsuji, Y. Fukuda, T. Wakimoto, S. Mayaguchi, Applied Physics of Japan, 38(12B)(1999)L1502).

化学式3The molecular formula of the EL material (Ir composition) reported in the above article is as follows:

chemical formula 3

As mentioned above, if phosphorescence from triplet excitons can be put into practical use, it could, in principle, increase the quantum efficiency of extrinsic luminescence to three to four times that of singlet exciton fluorescence.

The structure of this embodiment can be freely used in combination with the structures of Embodiments 1-5.

Embodiment 7

Organic light emitting material thin films are generally formed by inkjet method, spin coating method or evaporation method. In Embodiment 7, a method other than the above method among methods of forming an organic light-emitting layer is described.

In this embodiment, sputtering is performed using a colloidal solution (also called sol) in which molecular groups constituting an organic light emitting material are dispersed to form a thin film including molecular groups of an organic light emitting material on a substrate in an inert gas. This organic luminescent material exists as particles, each particle has a cluster of several molecules in the liquid.

FIG. 15 illustrates how to form the organic light emitting layer 650 by spraying the composition from a nozzle (not shown) in an inert gas (nitrogen in this embodiment). The composition was obtained by spraying tris(2-phenylpyridine)iridium (Ir(ppy) ₃ ), an iridium compound used as an organic light-emitting material, and bathocuproine (BCP), in toluene. It is an organic light-emitting material used as a matrix (it will be called a matrix material hereinafter).

In FIG. 15, a template 651 is used to selectively form an organic light emitting layer 650 with a thickness of 25-40 nm. Both iridium compounds and BCP are insoluble in toluene.

Actually, the organic light-emitting layer is sometimes used as a single layer, and sometimes it is used as a multilayer. If the organic light emitting layer has a multilayer structure, another (other) organic light emitting layer is formed after forming the organic light emitting layer 650 in a similar manner. At this time, all organic light-emitting layers deposited are collectively referred to as an organic light-emitting layer.

The thin film forming method in this embodiment is capable of forming a thin film even if the organic light-emitting material in the liquid is in any state. In particular, this method allows the formation of an organic light-emitting layer of good quality using a hardly soluble organic light-emitting material. Also, since a thin film is formed by sputtering a liquid including an organic light-emitting material with a carrier gas, it is possible to form a thin film in a short time. The method of producing a liquid comprising an organic light-emitting material for spraying can be greatly simplified. Further, in this embodiment a template is used to form the film with a desired pattern so that the film is formed through the openings of the template. In addition, in addition to effectively utilizing expensive organic light-emitting materials, it is also possible to collect and reuse organic light-emitting materials attached to templates.

The ink-jet method and the spin-coating method have a limitation that organic light-emitting materials that are easily soluble in solvents cannot be used. The limitation of evaporation is that organic light-emitting materials, which decompose before evaporation, cannot be used. However, the thin film forming method in this embodiment does not have the above limitations.

Organic light-emitting materials suitable for the thin film forming method in this embodiment include dihydroxyquinoacridine, tris(2-phenylpyridine) iridium, bathocuproine, poly(1,4-divinylbenzene), poly (1,4-divinylnaphthalene), poly(2-phenyl-1,4-divinylbenzene), polythiophene, poly(3-phenylthiophene), poly(1,4-phenylene) , poly(2,7-fluorene) and so on.

The structure of Embodiment 7 can be freely combined with any one of Embodiments 1-6.

Embodiment 8

This embodiment describes in more detail the pixel portion of the light-emitting device obtained in the present invention. The top structure of the pixel portion is shown in Fig. 16A, and its circuit diagram is shown in Fig. 16B. Figures 16A and 16B use the same reference symbols.

The source of the switching TFT 802 is connected to the source wire 815, and its drain is connected to the drain wire 805. The drain wire 805 is electrically connected to the gate electrode of the current control TFT 806. The source of the current control TFT 806 is electrically connected to the power line 816, and the drain is electrically connected to the drain wire 817. The drain wire 817 is electrically connected to the pixel electrode (cathode) 818 shown by the dotted line.

A storage capacitor is formed in region 819 . The capacitive memory 819 includes a semiconductor film 820 connected to the power line 816, an insulating film (not shown) on the same layer as the gate insulating film and a gate electrode 807. Capacitors including the gate electrode 807, the layer (not shown) where the first interlayer insulating film is located, and the power supply line 816 can also be used as storage capacitors.

This embodiment 8 can be used in combination with embodiments 1-7.

Embodiment 9

This embodiment describes an example of a circuit configuration of a light emitting device with reference to FIG. 17. FIG. The circuit configuration in this embodiment is for digital driving. The structure in this embodiment has an active-side driver circuit 901, a pixel portion 906, and a gate-side driver circuit 907.

The drive circuit 901 on the source side has a shift register 902 , a latch (A) 903 , a latch (B) 904 and a buffer 905 . For analog driving, replace latches (A) and (B) with sampling circuits (transmission gates). The driver circuit 907 on the gate side has a shift register 908 and a buffer 909 . However, buffer 909 does not always have to be present.

In this embodiment, pixel portion 906 includes a plurality of pixels, each pixel having an OLED. Preferably, the cathode of the OLED is connected to the drain of the current control TFT.

The driver circuit 901 on the source side and the driver circuit 907 on the gate side include n-channel TFTs or p-channel TFTs obtained in Embodiments 2-4.

Although not illustrated, another gate-side driver circuit is added across the pixel portion 906 opposite to the gate-side driver circuit 907 . At this time, the drive circuits on the two gate sides have the same structure and share the same gate wire, so the other can send a gate signal instead of the separate one, so that the pixel part can work normally.

This embodiment can be used in combination with embodiments 1-8.

Embodiment 10

In Embodiment 10, a roll-to-roll method of forming a sealing film on a flexible plastic substrate is described.

Fig. 19 schematically shows the structure of a thin film forming apparatus in Embodiment 10. The thin film forming apparatus of the present invention shown in FIG. 19 includes two spaces 804 and 890 for forming an isolation film by sputtering, spaces 805-808 for controlling air pressure in the two spaces 804 and 809, a mechanism 820 for using resin, and A mechanism 813 for curing the resin used.

A space 804 for forming an isolation film by sputtering includes a roller 801 for spreading a substrate 802, a voltage electrode 810 having a target, and a heater 811 also serving as an electrode. A space 809 for forming an isolation film by sputtering includes a roll 803 for the roll substrate 802, a voltage electrode 814 with a target, and a heater 815 also serving as an electrode.

The substrate 802 is unrolled from the unwinding roller 801 and rolled up by the roller 803 for rolling the substrate.

In this embodiment, a silicon nitride film is formed in the space 804 . Specifically, the air pressure in the space 804 is maintained at 0.4 Pa with a turbomolecular pump or the like. In this state, a flow rate of 10 seem of argon, 35 seem of nitrogen and 5 seem of hydrogen was applied.

The substrate 802 on which the silicon nitride film is formed in the space 804 passes through the spaces 805 and 806 successively, and is then exposed to atmospheric pressure. Resin 812 is applied to substrate 802 by mechanism 820 . The spaces 805 and 806 are evacuated with a turbomolecular pump or the like to maintain the air pressure in the space 804 at a desired level without being affected by atmospheric pressure. Although two spaces 805 and 806 are used to prevent the influence of atmospheric pressure, one space may be sufficient, depending on the situation. There are also spaces for three or more if required.

In this embodiment, resin 812 employs thermally polymerizable polyethylene. After the resin 812 is applied, the substrate 802 is heated with a halogen lamp 813 to cure the applied resin 812 .

Specifically, in this embodiment, a halogen lamp that heats the substrate serves as the mechanism 813 for curing the resin used. If the resin is to be cured by heating, the heating device is not limited to a halogen lamp; infrared lamps, metal halide lamps, xenon arc lamps, carbon arc lamps, high pressure sodium lamps or high pressure mercury lamps may also be used. In addition, the heating means is not limited to lamps; heating may be performed with a heater or the like. If the resin is curable not by heat but by ultraviolet rays, the resin can be cured by irradiating with ultraviolet rays.

The substrate 802 on which the resin film is formed is sent into the spaces 807 and 808 and finally reaches the space 809 . Spaces 807 and 808 are evacuated with a turbomolecular pump or the like, so that the air pressure in space 809 is a required pressure without being affected by atmospheric pressure. Although two spaces 807 and 808 are used to prevent atmospheric pressure effects, one space may be sufficient, depending on the situation. Three or more spaces can be used when necessary.

A silicon nitride oxide film is formed in the space 809 . Specifically, while maintaining the air pressure in the space 809 at 0.4 Pa with a turbomolecular pump or the like, a flow rate of 10 sccm of argon, 31 sccm of nitrogen, 5 sccm of hydrogen, and 4 sccm of _N2O was used.

The substrate 802 on which the silicon oxynitride film is formed is rolled up by a roller 803 for rolling the substrate.

The structure described above can be used for mass production of flexible plastic substrates having a sealing film including a stress relaxation film between two separating films.

Although it is described in this embodiment that the film forming apparatus for forming the sealing film includes a silicon nitride film, a polyethylene thin film and a silicon oxynitride film, the material of the isolation film is not limited thereto. In addition, the stress relaxation film is not limited to polyethylene; any resin material having a smaller stress than that of the separator can be used.

Although two layers of isolation films are formed in this embodiment, three or more layers of isolation films may also be formed. In this case, it is sufficient to provide a sputtering space, a space protected from the influence of atmospheric pressure, a mechanism for applying resin, and a mechanism for curing the used resin in a manner suitable for each thin film formation.

In addition, by repeatedly unwinding the rolled substrate with the unrolling roller 801 after rolling the substrate 802 onto the roller 803, a multilayer sealing film including a release film and a stress relaxation film can be formed.

Embodiment 10 can be used in combination with any one of Embodiments 1-9.

Embodiment 11

Using light-emitting elements, light-emitting devices capable of self-illumination have better visibility and wider viewing angles in bright places than liquid crystal displays. Therefore, this light emitting device can be used in display devices of various electric appliances.

Examples of electrical appliances employing light-emitting devices manufactured according to the invention are video cameras, digital cameras, eyeglass-like displays (head-band displays), navigation systems, audio playback devices (such as car audio and audio components), notebook computers, gaming machines, portable information terminals (such as mobile computers, cellular phones, portable game machines, and electronic books), and image reproducing devices equipped with recording media (specifically, devices equipped with displays capable of reproducing data recorded on digital discs ( data on a recording medium such as a DVD) to display an image of the data). A wide viewing angle is very important, especially for portable information terminals, since they are often viewed at an angle. Therefore, it is preferable that a portable information terminal employs a light emitting device using a light emitting element. Specific examples of these appliances are given in Figures 18A-18H.

FIG. 18A shows a digital camera, which includes a main body 2101, a display unit 2102, an image receiving unit 2103, control keys 2104, an external connection port 2105, a shutter button 2106, and the like. The light emitting device manufactured according to the present invention can be used for the display unit 2102.

FIG. 18B shows a mobile computer, which includes a main body 2301, a display unit 2302, a switch 2303, control keys 2304, an infrared port 2305 and so on. The light emitting device manufactured according to the present invention can be used for the display unit 2302 .

FIG. 18C shows a glasses-type display (head-mounted display), which includes a main body 2501 , a display unit 2502 and temples 2503 . A light emitting device fabricated according to the present invention can be used for the display unit 2502 .

18D shows a cellular phone, which includes a main body 2701, a housing 2702, a display unit 2703, an audio input unit 2704, an audio output unit 2705, control keys 2706, an external connection port 2707, an antenna 2708, and the like. A light emitting device manufactured according to the present invention can be used for the display unit 2703 . If the display unit 2703 displays white letters on a black background, the cellular phone consumes less power.

If the intensity of the light emitted by the organic material is enhanced in the future, this light-emitting device can be used in a projector or a rear projector to amplify the light including image information through a lens or the like, and project the light out.

These appliances are used more and more frequently to display information, especially animation information, transmitted through communication lines such as the Internet and CATV (Cable TV). Due to the high response speed of organic materials, this light-emitting device is suitable for animation display.

In such lighting devices, the light emitting parts consume power, so it is desirable to display information in a way that requires fewer light emitting parts. When a light-emitting device is used in a display unit of a portable information terminal, especially a cellular phone and an audio reproduction device mainly displaying text information, it is preferable to drive the device so that the part that does not emit light constitutes the background and the part that emits light The part of constitutes the text information.

As described above, the application range of the light emitting device manufactured according to the deposition apparatus of the present invention is so wide that it can be used for electric appliances in all fields. The electric appliance of this embodiment can adopt any light-emitting device in Embodiments 1-10.

According to the present invention, due to the laminated structure formed by multiple isolation films, even if one isolation film cracks, the other isolation films can still effectively prevent moisture or oxygen from entering the organic light-emitting layer. In addition, even if the quality of the isolation film is reduced due to the low film formation temperature, the laminated structure of the multi-layer isolation film can still effectively prevent moisture and oxygen from entering the organic light-emitting layer.

In addition, a stress relaxation film thinner than the isolation films is interposed between the isolation films, so the stress of the entire insulating film can be reduced. Thus, a separator sandwiching a stress relaxation film is less likely to crack due to stress than a single-layer separator, even though the multilayer separator has the same total thickness as the single-layer separator.

Therefore, compared with the single-layer isolation film, the multi-layer isolation film can effectively prevent moisture and oxygen from entering the organic light-emitting layer, even though the total thickness of the multi-layer isolation film is the same as that of the single-layer isolation film. Also, such a multilayer separator rarely cracks due to stress.

Claims (102)

1. A lighting device, comprising: first base; second base; a light emitting element formed between the first substrate and the second substrate; a multilayer first insulating film formed between the first substrate and the light emitting element; at least one second insulating film formed in each space between the plurality of first insulating films; a multilayer third insulating film formed between the second substrate and the light emitting element; and at least one fourth insulating film formed in each space between the plurality of third insulating films, wherein the first substrate and the second substrate are formed of plastic, and The stress of at least one second insulating film is smaller than the stress of each layer in the multi-layer first insulating film, and the stress of at least one fourth insulating film is smaller than the stress of each layer in the multi-layer third insulating film. 2. The light emitting device of claim 1, wherein at least one of the first substrate and the second substrate is flexible. 3. The light emitting device of claim 1, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate, and polyethylene glycol phthalate. 4. The light-emitting device of claim 1, wherein at least one of the multilayer first insulating film and the multilayer third insulating film comprises silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and nitrogen Any layer selected from the group of alumina silicon. 5. The light-emitting device of claim 1, wherein the second insulating film and the fourth insulating film are selected from the group consisting of polyimide, acrylic, polyamide, polyimide ammonia, benzocyclobutene, and epoxy resin. Choose any layer. 6. An electric appliance comprising the light emitting device of claim 1, wherein the electric appliance is selected from the group consisting of video cameras, digital cameras, eyeglass displays, car navigation systems, personal computers and portable information terminals. 7. A lighting device comprising: first base; second base; a light emitting element and a thin film transistor formed between the first substrate and the second substrate; a multilayer first insulating film formed between the first substrate and the light emitting element and the thin film transistor; at least one second insulating film formed in each space between the plurality of first insulating films; a multilayer third insulating film formed between the second substrate, the light emitting element, and the thin film transistor; and at least one fourth insulating film formed in each space between the plurality of third insulating films, wherein the first substrate and the second substrate are formed of plastic, and The stress of at least one second insulating film is smaller than the stress of each layer in the multi-layer first insulating film; the stress of at least one fourth insulating film is smaller than the stress of each layer in the multi-layer third insulating film. 8. The light emitting device of claim 7, wherein at least one of the first substrate and the second substrate is flexible. 9. The light emitting device of claim 7, wherein the plastic comprises any layer selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate, and polyethylene glycol phthalate. 10. The light-emitting device of claim 7, wherein at least one of the multilayered first insulating film and the multilayered third insulating film comprises silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and nitrogen Any one selected from the group of alumina silicon. 11. The light-emitting device of claim 7, wherein at least one layer of the second insulating film and the fourth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonium, styrene-cyclobutene and ring Any one selected from the group of epoxy resins. 12. An electric appliance comprising the light emitting device of claim 7, wherein the electric appliance is selected from the group consisting of video cameras, digital cameras, eyeglass displays, car navigation systems, personal computers and portable information terminals. 13. A lighting device comprising: a base; a light emitting element; a multilayer first insulating film formed between the substrate and the light emitting element; at least one second insulating film formed in each space between the plurality of first insulating films; multilayer third insulating film; and at least one fourth insulating film formed in each space between the plurality of third insulating films, wherein the light emitting element is formed between the multilayer third insulating film and the substrate, wherein the substrate is formed of plastic, and The stress of at least one second insulating film is smaller than the stress of each layer in the multi-layer first insulating film; the stress of at least one fourth insulating film is smaller than the stress of each layer in the multi-layer third insulating film. 14. The light emitting device of claim 13, wherein the substrate is flexible. 15. The light emitting device of claim 13, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate, and polyethylene glycol phthalate. 16. The light-emitting device of claim 13, wherein at least one of the multilayer first insulating film and the multilayer third insulating film comprises silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and nitrogen Any one selected from the group of alumina silicon. 17. The light-emitting device of claim 13, wherein at least one layer of the second insulating film and the fourth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonium, styrene-cyclobutene, and cyclic Any one selected from the group of epoxy resins. 18. An electric appliance comprising the light emitting device of claim 13, wherein the electric appliance is selected from the group consisting of a video camera, a digital camera, an eyeglass display, a car navigation system, a personal computer, and a portable information terminal. 19. A lighting device comprising: a base; a light emitting element and a thin film transistor; a multilayer first insulating film formed between the substrate, the light emitting element and the thin film transistor; at least one second insulating film formed in each space between the plurality of first insulating films; multilayer third insulating film; and at least one fourth insulating film formed in each space between the plurality of third insulating films, The light emitting element and the thin film transistor are formed between the multi-layer third insulating film and the substrate, wherein the substrate is formed of plastic, and The stress of at least one second insulating film is smaller than the stress of each layer in the multi-layer first insulating film; the stress of at least one fourth insulating film is smaller than the stress of each layer in the multi-layer third insulating film. 20. The light emitting device of claim 19, wherein the substrate is flexible. 21. The light emitting device of claim 19, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate, and polyethylene glycol phthalate. 22. The light-emitting device of claim 19, wherein at least one of the multilayered first insulating film and the multilayered third insulating film comprises silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and nitrogen Any one selected from the group of alumina silicon. 23. The light-emitting device according to claim 19, wherein at least one layer of the second insulating film and the fourth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonium, styrene-cyclobutene and ring Any one selected from the group of epoxy resins. 24. An electric appliance comprising the light emitting device of claim 19, wherein the electric appliance is selected from the group consisting of video cameras, digital cameras, eyeglass displays, car navigation systems, personal computers and portable information terminals. 25. A lighting device comprising: first base; second base; a light emitting element formed between the first substrate and the second substrate; a multilayer first insulating film formed between the first substrate and the light emitting element; at least one second insulating film formed in each space between the plurality of first insulating films; a multilayer first adhesive layer formed between the first substrate and the multilayer first insulating film; and a multilayer third insulating film formed between the second substrate and the light emitting element; at least one fourth insulating film formed in each space between the plurality of third insulating films; and a second adhesive layer formed between the second substrate and the multilayer third insulating film, wherein the first substrate and the second substrate are formed of plastic, and The stress of at least one second insulating film is smaller than the stress of each layer in the multi-layer first insulating film, and the stress of at least one fourth insulating film is smaller than the stress of each layer in the multi-layer third insulating film. 26. The light emitting device of claim 25, wherein at least one of the first substrate and the second substrate is flexible. 27. The light emitting device of claim 25, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate, and polyethylene glycol phthalate. 28. The light-emitting device of claim 25, wherein at least one of the multilayered first insulating film and the multilayered third insulating film comprises silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and nitrogen Any one selected from the group of alumina silicon. 29. The light-emitting device according to claim 25, wherein at least one layer of the second insulating film and the fourth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonium, styrene-cyclobutene, and cyclic Any one selected from the group of epoxy resins. 30. An electric appliance comprising the light emitting device of claim 25, wherein the electric appliance is selected from the group consisting of video cameras, digital cameras, eyeglass displays, car navigation systems, personal computers and portable information terminals. 31. A method of making a light emitting device comprising: forming a first adhesive layer on the first substrate; forming a first insulating film on the first adhesive layer; forming a light emitting element and a thin film transistor on the first insulating film; forming a second insulating film to cover the light emitting element and the thin film transistor; bonding the multilayer fourth insulating film and the second insulating film included in the second substrate to each other through the second adhesive layer, the multilayer fourth insulating film sandwiching at least one layer of the third insulating film; removing the first substrate to expose the first insulating film by removing the first adhesive layer; and adhering the multilayer sixth insulating film and the first insulating film included in the third substrate to each other through the third adhesive layer, the multilayer sixth insulating film sandwiching at least one fifth insulating film, wherein the second substrate and the third substrate are formed of plastic, and The stress of at least one layer of the third insulating film is smaller than the stress of each layer of the multi-layer fourth insulating film, and the stress of at least one layer of the fifth insulating film is smaller than the stress of each layer of the multi-layer sixth insulating film. 32. The method of manufacturing a light emitting device of claim 31, wherein the first adhesive layer is removed by spraying a fluid thereon. 33. The method of manufacturing a light emitting device of claim 31, wherein the first adhesive layer comprises silicon. 34. The method of manufacturing a light-emitting device of claim 33, wherein the first adhesive layer is removed using halogen fluoride. 35. The method of manufacturing a light emitting device of claim 31, wherein the first adhesive layer comprises SOG. 36. The method of manufacturing a light-emitting device of claim 35, wherein the first adhesive layer is removed using hydrogen fluoride. 37. The method of manufacturing a light emitting device as claimed in claim 31, wherein the first adhesive layer is removed using a laser beam. 38. The method of manufacturing a light emitting device as claimed in claim 37, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO ₄ laser. 39. The method of manufacturing a light-emitting device as claimed in claim 37, wherein the laser beam is any one of a fundamental wave, a second harmonic wave and a third harmonic wave emitted by a YAG laser. 40. The method for manufacturing a light-emitting device according to claim 31, wherein at least one layer of the third insulating film and at least one layer of the fifth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonia, benzene Any one selected from the group of propylene cyclobutene and epoxy resin. 41. The method for manufacturing a light-emitting device according to claim 31, wherein some of the multilayer fourth insulating film and the multilayer sixth insulating film comprise silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and Any one selected from the group of aluminum oxynitride silicon. 42. The method of manufacturing a light emitting device as claimed in claim 31, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate and polyethylene glycol phthalate. 43. A method of making a light emitting device comprising: forming a first adhesive layer on the first substrate; forming a first insulating film on the first adhesive layer; forming a light emitting element, a thin film transistor and a wire on the first insulating film; Forming a second insulating film to cover the light-emitting elements, thin film transistors and wires; bonding the multilayer fourth insulating film and the second insulating film included in the second substrate to each other through the second adhesive layer, the multilayer fourth insulating film sandwiching at least one layer of the third insulating film; removing the first substrate to expose the first insulating film by removing the first adhesive layer; and adhering the multilayer sixth insulating film and the first insulating film included in the third substrate to each other through the third adhesive layer, the multilayer sixth insulating film sandwiching at least one fifth insulating film, Partially remove the second substrate, the second insulating film, at least one layer of the third insulating film, the multi-layer fourth insulating film and the second adhesive layer, and partially expose the wires, thereby using the anisotropic conductive resin to make part of the wires and the terminals included in the FPC are electrically connected to each other, wherein the second substrate and the third substrate are formed of plastic, and The stress of at least one layer of the third insulating film is smaller than the stress of each layer of the multi-layer fourth insulating film, and the stress of at least one layer of the fifth insulating film is smaller than the stress of each layer of the multi-layer sixth insulating film. 44. The method of manufacturing a light emitting device of claim 43, wherein the first adhesive layer is removed by spraying a fluid thereon. 45. The method of manufacturing a light emitting device of claim 43, wherein the first adhesive layer comprises silicon. 46. The method of manufacturing a light-emitting device of claim 45, wherein the first adhesive layer is removed using halogen fluoride. 47. The method of manufacturing a light emitting device of claim 43, wherein the first adhesive layer comprises SOG. 48. The method of manufacturing a light-emitting device as claimed in claim 47, wherein the first adhesive layer is removed using hydrogen fluoride. 49. The method of manufacturing a light emitting device as claimed in claim 43, wherein the first adhesive layer is removed using a laser beam. 50. The method of manufacturing a light emitting device as claimed in claim 49, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO ₄ laser. 51. The method of manufacturing a light-emitting device as claimed in claim 49, wherein the laser beam is any one of fundamental wave, second harmonic wave and third harmonic wave emitted by YAG laser. 52. The method for manufacturing a light emitting device according to claim 43, wherein at least one layer of the third insulating film and at least one layer of the fifth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonia, benzene Any one selected from the group of propylene cyclobutene and epoxy resin. 53. The method for manufacturing a light-emitting device according to claim 43, wherein some of the multilayer fourth insulating film and the multilayer sixth insulating film comprise silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and Any one selected from the group of aluminum oxynitride silicon. 54. The method of manufacturing a light emitting device as claimed in claim 43, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate and polyethylene glycol phthalate. 55. A method of making a light emitting device comprising: forming a first adhesive layer on the first substrate; forming a first insulating film on the first adhesive layer; forming a light emitting element, a thin film transistor and a wire on the first insulating film; Forming a second insulating film to cover the light-emitting elements, thin film transistors and wires; bonding the multilayer fourth insulating film and the second insulating film included in the second substrate to each other through the second adhesive layer, the multilayer fourth insulating film sandwiching at least one layer of the third insulating film; removing the first substrate to expose the first insulating film by removing the first adhesive layer; and adhering the multilayer sixth insulating film and the first insulating film included in the third substrate to each other through the third adhesive layer, the multilayer sixth insulating film sandwiching at least one fifth insulating film, Partially removing the third substrate, the first insulating film, at least one fifth insulating film, the multi-layer sixth insulating film and the third adhesive layer, and partially exposing the wires, thereby using an anisotropic conductive resin to make part of the wires and The terminals included in the FPC are electrically connected to each other, wherein the second substrate and the third substrate are formed of plastic, and The stress of at least one layer of the third insulating film is smaller than the stress of each layer of the multi-layer fourth insulating film, and the stress of at least one layer of the fifth insulating film is smaller than the stress of each layer of the multi-layer sixth insulating film. 56. The method of manufacturing a light emitting device of claim 55, wherein the first adhesive layer is removed by spraying a fluid thereon. 57. The method of fabricating a light emitting device of claim 55, wherein the first adhesive layer comprises silicon. 58. The method of manufacturing a light-emitting device of claim 57, wherein the first adhesive layer is removed using halogen fluoride. 59. The method of manufacturing a light emitting device of claim 55, wherein the first adhesive layer comprises SOG. 60. The method of manufacturing a light-emitting device of claim 59, wherein the first adhesive layer is removed using hydrogen fluoride. 61. The method of manufacturing a light emitting device as claimed in claim 55, wherein the first adhesive layer is removed using a laser beam. 62. The method of manufacturing a light emitting device as claimed in claim 61, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO ₄ laser. 63. The method of manufacturing a light-emitting device as claimed in claim 61, wherein the laser beam is any one of fundamental wave, second harmonic wave and third harmonic wave emitted by YAG laser. 64. The method for manufacturing a light-emitting device according to claim 55, wherein at least one layer of the third insulating film and at least one layer of the fifth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonia, benzene Any one selected from the group of propylene cyclobutene and epoxy resin. 65. The method for manufacturing a light-emitting device according to claim 55, wherein some of the multilayer fourth insulating film and the multilayer sixth insulating film comprise silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and Any one selected from the group of aluminum oxynitride silicon. 66. The method of manufacturing a light emitting device as claimed in claim 55, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate and polyethylene glycol phthalate. 67. A method of making a light emitting device comprising: forming a first adhesive layer on the first substrate; forming a first insulating film on the first adhesive layer; forming a light emitting element and a thin film transistor on the first insulating film; forming a second insulating film to cover the light emitting element and the thin film transistor; bonding the second substrate and the second insulating film to each other through a second adhesive layer; removing the first substrate, exposing the first insulating film by removing the first adhesive layer; bonding the multilayer fourth insulating film and the first insulating film included in the third substrate to each other through a third adhesive layer, the multilayer fourth insulating film sandwiching at least one layer of the third insulating film; removing the second substrate, exposing the second insulating film by removing the second insulating film; forming a plurality of sixth insulating films with at least one fifth insulating film sandwiched therebetween, the multi-layer sixth insulating films are in contact with the second insulating film, wherein the third substrate is formed of plastic, and The stress of at least one layer of the third insulating film is smaller than the stress of each layer of the multi-layer fourth insulating film, and the stress of at least one layer of the fifth insulating film is smaller than the stress of each layer of the multi-layer sixth insulating film. 68. The method of manufacturing a light emitting device of claim 67, wherein one of the first adhesive layer and the second adhesive layer is removed by spraying a fluid thereon. 69. The method of fabricating a light emitting device of claim 67, wherein the first adhesive layer comprises silicon. 70. The method of manufacturing a light-emitting device of claim 69, wherein the first adhesive layer is removed using halogen fluoride. 71. The method of manufacturing a light emitting device of claim 67, wherein the first adhesive layer comprises SOG. 72. The method of manufacturing a light-emitting device as claimed in claim 71, wherein the first adhesive layer is removed using hydrogen fluoride. 73. The method of manufacturing a light emitting device as claimed in claim 67, wherein one of the first adhesive layer and the second adhesive layer is removed using a laser beam. 74. The method of manufacturing a light-emitting device as claimed in claim 73, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a _YVO4 laser. 75. The method of manufacturing a light emitting device as claimed in claim 73, wherein the laser beam is any one of fundamental wave, second harmonic wave and third harmonic wave emitted by YAG laser. 76. The method for manufacturing a light-emitting device according to claim 67, wherein at least one layer of the third insulating film and at least one layer of the fifth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonium, benzene Any one selected from the group of propylene cyclobutene and epoxy resin. 77. The method of manufacturing a light-emitting device in claim 67, wherein some of the multilayer fourth insulating film and the multilayer sixth insulating film are made from silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and Any one selected from the group of aluminum oxynitride silicon. 78. The method of manufacturing a light emitting device as claimed in claim 67, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate and polyethylene glycol phthalate. 79. A method of making a light emitting device comprising: forming a first adhesive layer on the first substrate; forming a first insulating film on the first adhesive layer; forming a light emitting element, a thin film transistor and a wire on the first insulating film; Forming a second insulating film to cover the light-emitting elements, thin film transistors and wires; bonding the second substrate and the second insulating film to each other through a second adhesive layer; removing the first substrate to expose the first insulating film by removing the first adhesive layer; and The multilayer fourth insulating film and the first insulating film included in the third substrate are bonded to each other through the third adhesive layer, the multilayer fourth insulating film sandwiching at least one layer of the third insulating film, removing the second adhesive layer, thereby removing the second substrate and exposing the second insulating film; forming a multilayer sixth insulating film with at least one fifth insulating film interposed therebetween, the multilayer sixth insulating film being in contact with the second insulating film; and Partially removing the second insulating film, at least one layer of the fifth insulating film and the multi-layer sixth insulating film, and partially exposing the wires, thereby using an anisotropic conductive resin to electrically connect part of the wires to the terminals included in the FPC, wherein the third substrate is formed of plastic, and The stress of at least one layer of the third insulating film is smaller than the stress of each layer of the multi-layer fourth insulating film, and the stress of at least one layer of the fifth insulating film is smaller than the stress of each layer of the multi-layer sixth insulating film. 80. The method of manufacturing a light emitting device of claim 79, wherein one of the first adhesive layer and the second adhesive layer is removed by spraying a fluid thereon. 81. The method of fabricating a light emitting device of claim 79, wherein the first adhesive layer comprises silicon. 82. The method of manufacturing a light-emitting device of claim 81, wherein the first adhesive layer is removed using halogen fluoride. 83. The method of manufacturing a light emitting device of claim 79, wherein the first adhesive layer comprises SOG. 84. The method of manufacturing a light-emitting device of claim 83, wherein the first adhesive layer is removed using hydrogen fluoride. 85. The method of manufacturing a light emitting device as claimed in claim 79, wherein one of the first adhesive layer and the second adhesive layer is removed using a laser beam. 86. The method of manufacturing a light emitting device as claimed in claim 85, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO ₄ laser. 87. The method of manufacturing a light-emitting device as claimed in claim 85, wherein the laser beam is any one of fundamental wave, second harmonic wave and third harmonic wave emitted by YAG laser. 88. The method for manufacturing a light-emitting device according to claim 79, wherein at least one layer of the third insulating film and at least one layer of the fifth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonia, benzene Any one selected from the group of propylene cyclobutene and epoxy resin. 89. The method for manufacturing a light-emitting device as claimed in claim 79, wherein some of the multilayer fourth insulating film and the multilayer sixth insulating film comprise silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and Any one selected from the group of aluminum oxynitride silicon. 90. The method of manufacturing a light emitting device as claimed in claim 79, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate and polyethylene glycol phthalate. 91. A method of making a light emitting device, comprising: forming a first adhesive layer on the first substrate; forming a first insulating film on the first adhesive layer; forming a light emitting element, a thin film transistor and a wire on the first insulating film; Forming a second insulating film to cover the light emitting element, thin film transistor and wire; bonding the second base and the second insulating film to each other through a second adhesive layer; removing the first substrate to expose the first insulating film by removing the first adhesive layer; and The multilayer fourth insulating film and the first insulating film included in the third substrate are bonded to each other through the third adhesive layer, the multilayer fourth insulating film sandwiching at least one layer of the third insulating film, removing the second substrate, exposing the second insulating film by removing the second adhesive layer; forming a multilayer sixth insulating film with at least one fifth insulating film interposed therebetween, the multilayer sixth insulating film being in contact with the second insulating film; and Partially remove the third substrate, the first insulating film, at least one layer of the third insulating film, the multi-layer fourth insulating film and the third adhesive layer, and partially expose the wires, thereby using an anisotropic conductive resin to make part of the wires and The terminals included in the FPC are electrically connected to each other, wherein the third substrate is formed of plastic, and The stress of at least one layer of the third insulating film is smaller than the stress of each layer of the multi-layer fourth insulating film, and the stress of at least one layer of the fifth insulating film is smaller than the stress of each layer of the multi-layer sixth insulating film. 92. The method of manufacturing a light emitting device of claim 91, wherein one of the first adhesive layer and the second adhesive layer is removed by spraying a fluid thereon. 93. The method of fabricating a light emitting device of claim 91, wherein the first adhesive layer comprises silicon. 94. The method of manufacturing a light-emitting device of claim 93, wherein the first adhesive layer is removed using halogen fluoride. 95. The method of manufacturing a light emitting device of claim 91, wherein the first adhesive layer comprises SOG. 96. The method of manufacturing a light-emitting device as claimed in claim 95, wherein the first adhesive layer is removed using hydrogen fluoride. 97. The method of manufacturing a light emitting device as claimed in claim 91, wherein one of the first adhesive layer and the second adhesive layer is removed using a laser beam. 98. The method of manufacturing a light emitting device as claimed in claim 97, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO ₄ laser. 99. The method of manufacturing a light-emitting device as claimed in claim 97, wherein the laser beam is any one of fundamental wave, second harmonic wave and third harmonic wave emitted by YAG laser. 100. The method for manufacturing a light-emitting device according to claim 91, wherein at least one layer of the third insulating film and at least one layer of the fifth insulating film comprises polyimide, acrylic, polyamide, polyimide ammonium, benzene Any one selected from the group of propylene cyclobutene and epoxy resin. 101. The method of manufacturing a light-emitting device as claimed in claim 91, wherein some of the multilayer fourth insulating film and the multilayer sixth insulating film comprise silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and Any one selected from the group of aluminum oxynitride silicon. 102. The method of manufacturing a light emitting device as claimed in claim 91, wherein the plastic comprises any one selected from the group consisting of polyethersulfone, polycarbonate, polyethylene terephthalate and polyethylene glycol phthalate.

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