JP3809681B2 - Peeling method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for peeling an object to be peeled, and more particularly, to a transfer method for peeling a transfer layer made of a thin film such as a functional thin film and transferring it to a transfer body such as a transparent substrate.
[0002]
[Prior art]
For example, when manufacturing a liquid crystal display (LCD) using a thin film transistor (TFT), a thin film transistor is formed on a transparent substrate by CVD or the like.
[0003]
These thin film transistors include those using amorphous silicon (a-Si) and those using polysilicon (p-Si), and those using polysilicon are formed through a high-temperature process. And those formed through a low-temperature process.
[0004]
By the way, since the thin film transistor is formed on the transparent substrate at a high temperature, it is necessary to use a material having excellent heat resistance as the transparent substrate. Therefore, at present, a transparent substrate made of quartz glass is used because it has a high softening point and a high melting point and can sufficiently withstand a temperature of about 1000 ° C. in a high-temperature process. Further, in the low temperature process, since a temperature around 500 ° C. becomes the maximum process temperature, heat resistant glass is used.
[0005]
However, such quartz glass having excellent heat resistance is a rare and very expensive material compared to ordinary glass, and it is difficult to produce a large transparent substrate. In addition, heat-resistant glass can be made larger than quartz glass, but it is much more expensive than ordinary glass. Further, both quartz glass and heat-resistant glass are brittle and easily broken, and are heavy. This is a serious drawback in constructing an LCD. Therefore, it has been an obstacle to manufacturing a large and inexpensive liquid crystal display.
[0006]
[Problems to be solved by the invention]
An object of the present invention is to provide a peeling method that can be easily peeled regardless of the properties, conditions, etc. of the object to be peeled, and in particular, can be transferred to various transfer bodies.
[0007]
[Means for Solving the Problems]
Such an object is achieved by the present invention of the following (1) to (30).
[0008]
(1) A peeling method for peeling an object to be peeled from a substrate through a separation layer composed of a laminate of a plurality of layers on the substrate,
A peeling method characterized by irradiating the separation layer with irradiation light to cause peeling within the separation layer and / or at the interface, thereby separating the object to be peeled from the substrate.
[0009]
(2) A peeling method for peeling an object to be peeled from a substrate through a separation layer composed of a laminate of a plurality of layers on a light-transmitting substrate,
A peeling method characterized by irradiating the separation layer with irradiation light from the substrate side, causing peeling in the layer and / or interface of the separation layer, and separating the object to be peeled from the substrate.
[0010]
(3) A method of peeling a transfer layer formed on a substrate via a separation layer composed of a laminate of a plurality of layers from the substrate and transferring it to another transfer member,
After bonding the transfer body to the opposite side of the substrate to be transferred,
Peeling characterized in that the separation layer is irradiated with irradiation light to cause peeling within the separation layer and / or at the interface, and the transfer layer is detached from the substrate and transferred to the transfer body. Method.
[0011]
(4) A method of peeling a transfer layer formed on a translucent substrate via a separation layer composed of a laminate of a plurality of layers from the substrate and transferring it to another transfer body,
After bonding the transfer body to the opposite side of the substrate to be transferred,
Irradiating the separation layer with irradiation light from the substrate side, causing separation within the layer and / or the interface of the separation layer, separating the transferred layer from the substrate, and transferring to the transfer body. A characteristic peeling method.
[0012]
(5) forming a separation layer composed of a laminate of a plurality of layers on a light-transmitting substrate;
Forming a transfer layer directly on the separation layer or via a predetermined intermediate layer;
Bonding a transfer body to the opposite side of the substrate to be transferred;
Irradiating the separation layer with irradiation light from the substrate side, causing separation in the layer and / or interface of the separation layer, separating the transferred layer from the substrate, and transferring to the transfer body; The peeling method characterized by having.
[0013]
(6) The peeling method according to (5), further including a step of removing the separation layer adhering to the substrate side and / or the transfer body side after the transfer of the transfer target layer to the transfer body.
[0014]
(7) The peeling method according to any one of (3) to (6), wherein the transferred layer is a functional thin film or a thin film device.
[0015]
(8) The peeling method according to any one of (3) to (6), wherein the transfer layer is a thin film transistor.
[0016]
(9) The peeling method according to any one of (3) to (8), wherein the transfer body is a transparent substrate.
[0017]
(10) The transfer body is composed of a material having a glass transition point (Tg) or a softening point equal to or lower than Tmax, where Tmax is a maximum temperature in forming the transfer layer. The peeling method according to any one of the above.
[0018]
(11) The peeling method according to any one of (3) to (10), wherein the transfer body is made of a material having a glass transition point (Tg) or a softening point of 800 ° C. or less.
[0019]
(12) The peeling method according to any one of (3) to (11), wherein the transfer body is made of a synthetic resin or a glass material.
[0020]
(13) The peeling method according to any one of (1) to (12), wherein the substrate has heat resistance.
[0021]
(14) The peeling according to any one of (3) to (12), wherein the substrate is made of a material having a strain point equal to or higher than Tmax, where Tmax is a maximum temperature in forming the transfer layer. Method.
[0022]
(15) The peeling method according to any one of (1) to (14), wherein the separation layer includes at least two layers having different compositions or characteristics.
[0023]
(16) The separation layer according to any one of (1) to (14), wherein the separation layer includes a light absorption layer that absorbs the irradiation light and another layer having a composition or characteristics different from the light absorption layer. Peeling method.
[0024]
(17) The separation method according to any one of (1) to (14), wherein the separation layer includes a light absorption layer that absorbs the irradiation light and a light shielding layer that blocks the irradiation light.
[0025]
(18) The peeling method according to (17), wherein the light shielding layer is located on a side opposite to an incident direction of the irradiation light with respect to the light absorption layer.
[0026]
(19) The peeling method according to (17) or (18), wherein the light shielding layer is a reflective layer that reflects the irradiation light.
[0027]
(20) The peeling method according to (19), wherein the reflective layer is formed of a metal thin film.
[0028]
(21) The separation according to any one of (16) to (20), wherein the separation of the separation layer is caused by disappearance or reduction of the bonding force between atoms or molecules of the substance constituting the light absorption layer. Method.
[0029]
(22) The peeling method according to any one of (1) to (21), wherein the separation layer includes a light absorption layer made of amorphous silicon.
[0030]
(23) The stripping method according to (22), wherein the amorphous silicon contains 2 at% or more of H (hydrogen).
[0031]
(24) The peeling method according to any one of (1) to (21), wherein the separation layer includes a light absorption layer made of ceramics.
[0032]
(25) The separation method according to any one of (1) to (21), wherein the separation layer has a light absorption layer made of metal.
[0033]
(26) The peeling method according to any one of (1) to (21), wherein the separation layer includes a light absorption layer made of an organic polymer material.
[0034]
(27) The organic polymer material is —CH— or —CH—. ₂ The peeling according to the above (26), which has at least one bond selected from-, -CO-, -CONH-, -NH-, -COO-, -N = N-, and -CH = N-. Method.
[0035]
(28) The peeling method according to any one of (1) to (27), wherein the irradiation light is laser light.
[0036]
(29) The peeling method according to (28), wherein the laser beam has a wavelength of 100 to 350 nm.
[0037]
(30) The peeling method according to (28), wherein the laser beam has a wavelength of 350 to 1200 nm.
[0038]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the peeling method of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
[0039]
1-8 is sectional drawing which shows the process of the Example of the peeling method of this invention, respectively. Hereinafter, the steps of the peeling method (transfer method) of the present invention will be sequentially described based on these drawings.
[0040]
[1] As shown in FIG. 1, a separation layer 2 made of a laminate of a plurality of layers is formed on one surface (separation layer forming surface 11) of a substrate 1. In this case, the separation layer 2 is formed by a method described later in order from the layer closer to the substrate 1.
[0041]
When the substrate 1 irradiates the irradiation light 7 from the substrate 1 side, the substrate 1 preferably has translucency through which the irradiation light 7 can pass.
[0042]
In this case, the transmittance of the irradiation light 7 is preferably 10% or more, and more preferably 50% or more. If this transmittance is too low, the attenuation (loss) of the irradiation light 7 increases, and a larger amount of light is required to peel off the separation layer 2.
[0043]
Moreover, it is preferable that the board | substrate 1 is comprised with the material with high reliability, and it is especially preferable that it is comprised with the material excellent in heat resistance. The reason is that, for example, when forming the transferred layer 4 or the intermediate layer 3 described later, the process temperature may be high (for example, about 350 to 1000 ° C.) depending on the type and the forming method. This is because if the substrate 1 is excellent in heat resistance, the range of setting of film forming conditions such as the temperature condition is widened when forming the transferred layer 4 or the like on the substrate 1.
[0044]
Therefore, the substrate 1 is preferably made of a material having a strain point equal to or higher than Tmax, where Tmax is the maximum temperature when the transfer layer 4 is formed. Specifically, the constituent material of the substrate 1 preferably has a strain point of 350 ° C. or higher, more preferably 500 ° C. or higher. Examples of such a material include heat-resistant glass such as quartz glass, soda glass, Corning 7059, and Nippon Electric Glass OA-2.
[0045]
In addition, if the process temperature at the time of formation of the separation layer 2, the intermediate layer 3, and the transferred layer 4 described later is lowered, an inexpensive glass material or synthetic resin having a low melting point can be used for the substrate 1 as well. .
[0046]
The thickness of the substrate 1 is not particularly limited, but is usually preferably about 0.1 to 5.0 mm, more preferably about 0.5 to 1.5 mm. If the thickness of the substrate 1 is too thin, the strength is reduced, and if it is too thick, the irradiation light 7 is easily attenuated when the transmittance of the substrate 1 is low. In addition, when the transmittance | permeability of the irradiation light 7 of the board | substrate 1 is high, the thickness may exceed the said upper limit.
[0047]
In addition, it is preferable that the thickness of the separation layer forming portion of the substrate 1 is uniform so that the irradiation light 7 can be uniformly irradiated.
[0048]
Further, the separation layer forming surface 11 and the irradiation light incident surface 12 of the substrate 1 are not limited to flat surfaces as shown in the figure, and may be curved surfaces.
[0049]
In the present invention, the substrate 1 is not removed by etching or the like, but the separation layer 2 between the substrate 1 and the transferred layer 4 is peeled off to separate the substrate 1. The range of choices for the substrate 1 is wide, such as using a relatively thick substrate.
[0050]
Next, the separation layer 2 will be described.
[0051]
The separation layer 2 has such a property that it absorbs irradiation light 7 to be described later and causes peeling (hereinafter referred to as “in-layer peeling” or “interface peeling”) in the layer and / or at the interface.
[0052]
The separation layer 2 includes at least two layers having different compositions or characteristics, and in particular, a light absorption layer 21 that absorbs the irradiation light 7 and another layer having a different composition or characteristics from the light absorption layer 21. Is preferably included. The other layer is preferably a light shielding layer (reflective layer 22) that shields the irradiation light 7. The light shielding layer is located on the opposite side (upper side in the figure) of the incident direction of the irradiation light 7 with respect to the light absorption layer 21, reflects or absorbs the irradiation light 7, and the irradiation light 7 is on the transferred layer 4 side. It functions to prevent or suppress entry into
[0053]
In this embodiment, the reflective layer 22 that reflects the irradiation light 7 is formed as the light shielding layer. The reflection layer 22 may be any layer that can reflect the irradiation light 7 with a reflectance of preferably 10% or more, more preferably 30% or more.
[0054]
Examples of such a reflective layer 22 include a metal thin film composed of a single layer or a plurality of layers, an optical thin film composed of a laminate of a plurality of thin films having different refractive indexes, and the like. It is preferably composed mainly of a metal thin film.
[0055]
As a constituent metal of the metal thin film, for example, Ta, W, Mo, Cr, Ni, Co, Ti, Pt, Pd, Ag, Au, Al, or the like, or an alloy containing at least one of these as a basic component is used. Can be mentioned. Examples of preferable additive elements constituting the alloy include Fe, Cu, C, Si, and B. By adding these, thermal conductivity and reflectance can be controlled. In addition, when the reflective layer 22 is formed by physical vapor deposition, there is an advantage that the target can be easily manufactured. Furthermore, by alloying, there is an advantage that the material is easier to obtain than pure metal, and the cost is low.
[0056]
The thickness of the reflective layer (light shielding layer) 22 is not particularly limited, but is usually preferably about 10 nm to 10 μm, and more preferably about 50 nm to 5 μm. If this thickness is too thick, it takes time to form the reflective layer 22, and it also takes time to remove the reflective layer 22 performed later. On the other hand, if the thickness is too thin, the light shielding effect may be insufficient depending on the film composition.
[0057]
The light absorption layer 21 is a layer that contributes to the separation of the separation layer 2, absorbs the irradiation light 7, and the bonding force between atoms or molecules of the substance constituting the light absorption layer 21 disappears or decreases, Phenomenologically, by causing ablation or the like, delamination within the layer and / or interfacial delamination results.
[0058]
Furthermore, irradiation with the irradiation light 7 may cause a gas to be released from the light absorption layer 21 and exhibit a separation effect. That is, there are a case where the component contained in the light absorption layer 21 is released as a gas, and a case where the separation layer 2 absorbs light and becomes a gas for a moment, and its vapor is released, contributing to the separation. is there.
[0059]
Examples of the composition of the light absorption layer 21 include the following.
[0060]
(1) Amorphous silicon (a-Si)
This amorphous silicon may contain H (hydrogen). In this case, the H content is preferably about 2 at% or more, more preferably about 2 to 20 at%. As described above, when a predetermined amount of H is contained, hydrogen is released by the irradiation of the irradiation light 7, and an internal pressure is generated in the separation layer 2, which becomes a force for peeling the upper and lower thin films.
[0061]
The content of H in the amorphous silicon is adjusted by appropriately setting film forming conditions such as gas composition, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power in CVD. Can do.
[0062]
(2) Various oxide ceramics such as silicon oxide or silicate compound, titanium oxide or titanate compound, zirconium oxide or zirconate compound, lanthanum oxide or lanthanate compound, dielectric (ferroelectric) or semiconductor
Examples of silicon oxide include SiO and SiO. ₂ , Si _Three O ₂ Examples of silicic acid compounds include K ₂ SiO _Three , Li ₂ SiO _Three , CaSiO _Three , ZrSiO _Four , Na ₂ SiO _Three Is mentioned.
[0063]
As titanium oxide, TiO, Ti ₂ O _Three TiO ₂ As the titanic acid compound, for example, BaTiO _Four , BaTiO _Three , Ba ₂ Ti ₉ O ₂₀ , BaTi _Five O ₁₁ , CaTiO _Three , SrTiO _Three , PbTiO _Three , MgTiO _Three , ZrTiO ₂ , SnTiO _Four , Al ₂ TiO _Five , FeTiO _Three Is mentioned.
[0064]
As zirconium oxide, ZrO ₂ Examples of the zirconate compound include BaZrO. _Three , ZrSiO _Four , PbZrO _Three MgZrO _Three , K ₂ ZrO _Three Is mentioned.
[0065]
(3) Ceramics such as PZT, PLZT, PLLZT, PBZT or dielectrics (ferroelectric materials)
(4) Nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride
(5) Organic polymer materials
Organic polymer materials include -CH- and -CH ₂ Bonds such as-, -CO- (ketone), -CONH- (amide), -NH- (imide), -COO- (ester), -N = N- (azo), -CH = N- (Schiff) Any material may be used as long as it has a large number of these bonds (particularly those bonds are cut by irradiation with irradiation light 7). Specific examples include polyolefins such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), polyethersulfone (PES), and epoxy resin.
[0066]
▲ 6 ▼ Metal
Examples of the metal include Al, Li, Ti, Mn, In, Sn, rare earth metals such as Y, La, Ce, Nd, Pr, Sm, and Gd, or alloys containing at least one of these. Can be mentioned.
[0067]
▲ 7 ▼ Hydrogen storage alloy
As a specific example, LaNi _Five Examples thereof include a hydrogen storage alloy of a rare earth transition metal compound such as that described above, or a Ti-based or Ca-based hydrogen storage alloy in which hydrogen is stored.
[0068]
▲ 8 ▼ Nitrogen storage alloy
Specific examples include rare earth iron such as Sm—Fe and Nd—Co, rare earth cobalt, rare earth nickel, and rare earth manganese compounds in which nitrogen is occluded.
[0069]
The thickness of the light absorption layer 21 varies depending on various conditions such as the purpose of peeling, the composition of the separation layer 2, the layer structure, and the forming method, but it is usually preferably about 1 nm to 20 μm, and about 10 nm to 2 μm. It is more preferable that the thickness is about 40 nm to 1 μm.
[0070]
If the film thickness of the light absorbing layer 21 is too small, the uniformity of film formation may be impaired, and unevenness may occur in the peeling. If the film thickness is too thick, irradiation is performed in order to ensure good peelability. It is necessary to increase the power (light quantity) of the light 7, and it takes time to remove the separation layer 2 later. In addition, it is preferable that the film thickness of the light absorption layer 21 and the reflection layer 22 is as uniform as possible.
[0071]
For the same reason as described above, the total thickness of the separation layer 2 is more preferably about 2 nm to 50 μm, and further preferably about 20 nm to 20 μm.
[0072]
The formation method of each layer (in this embodiment, the light absorption layer 21 and the reflection layer 22) constituting the separation layer 2 is not particularly limited, and is appropriately selected according to various conditions such as a film composition and a film thickness. For example, CVD (including MOCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion plating, PVD and other various vapor deposition methods, electroplating, immersion plating (dipping), Various plating methods such as electroless plating, Langmuir / Blodget (LB) method, spin coating, spray coating, roll coating and other coating methods, various printing methods, transfer methods, ink jet methods, powder jet methods, and the like. Two or more of them can be combined to form. In addition, the formation method of the light absorption layer 21 and the reflection layer 22 may be the same or different, and is suitably selected according to the composition etc.
[0073]
For example, when the composition of the light absorption layer 21 is amorphous silicon (a-Si), it is preferable to form the film by CVD, particularly low pressure CVD or plasma CVD.
[0074]
Further, when the light absorption layer 21 is made of ceramics by a sol-gel method or an organic polymer material, it is preferable to form a film by a coating method, particularly by spin coating.
[0075]
The reflective layer 22 made of a metal thin film is preferably formed by vapor deposition, molecular beam vapor deposition (MB), laser ablation vapor deposition, sputtering, ion plating, the above-described various platings, and the like.
[0076]
The formation of each layer constituting the separation layer 2 may be performed in two or more steps (for example, a layer formation step and a heat treatment step).
[0077]
[2] As shown in FIG. 2, an intermediate layer (underlayer) 3 is formed on the separation layer 2.
[0078]
The intermediate layer 3 is formed for various purposes. For example, a protective layer, an insulating layer, a conductive layer, and an irradiation light 7 that physically or chemically protect the transferred layer 4 described later at the time of manufacture or use. Examples thereof include a light shielding layer, a barrier layer that prevents migration of components to or from the transferred layer 4, and a layer that exhibits at least one of functions as a reflective layer.
[0079]
The composition of the intermediate layer 3 is appropriately set according to the purpose of formation thereof. For example, the intermediate layer 3 is formed between the separation layer 2 including the light absorption layer 21 made of amorphous silicon and the transferred layer 4 made of a thin film transistor. In the case of layer 3, SiO ₂ In the case of the intermediate layer 3 formed between the separation layer 2 and the transferred layer 4 made of PZT, Pt, Au, W, Ta, Mo, Al, Cr, Ti or these And metals such as alloys mainly composed of
[0080]
The thickness of such an intermediate layer 3 is appropriately determined according to the purpose of formation and the degree of function that can be exhibited, but it is usually preferably about 10 nm to 5 μm, and preferably about 40 nm to 1 μm. Is more preferable.
[0081]
Moreover, the formation method of the intermediate | middle layer 3 can also mention the method similar to the formation method quoted by the said separation layer 2. Further, the formation of the intermediate layer 3 may be performed in two or more steps.
[0082]
Note that two or more layers having the same or different composition can be formed as the intermediate layer 3. In the present invention, the transfer layer 4 may be formed directly on the separation layer 2 without forming the intermediate layer 3.
[0083]
[3] As shown in FIG. 3, a layer to be transferred (a material to be peeled) 4 is formed on the intermediate layer 3.
[0084]
The transferred layer 4 is a layer to be transferred to a transfer body 6 to be described later, and can be formed by the same method as the forming method described for the separation layer 2.
[0085]
The formation purpose, type, form, structure, composition, physical or chemical characteristics, etc. of the transferred layer 4 are not particularly limited, but in consideration of the purpose and usefulness of the transfer, a thin film, particularly a functional thin film or a thin film device. Is preferred.
[0086]
As functional thin films and thin film devices, for example, thin film transistors, thin film diodes, other thin film semiconductor devices, electrodes (eg, transparent electrodes such as ITO and mesa films), photoelectric conversion elements used for solar cells and image sensors, Switching elements, memories, actuators such as piezoelectric elements, micromirrors (piezo thin film ceramics), magnetic recording media, magneto-optical recording media, optical recording media and other recording media, magnetic recording thin film heads, coils, inductors, thin film high magnetic permeability materials And micro magnetic devices, filters, reflection films, dichroic mirrors, polarizing elements, etc., optical thin films, semiconductor thin films, superconducting thin films (eg, YBCO thin films), magnetic thin films, metal multilayer thin films, metal ceramic multilayer thin films, metals Semiconductor multilayer thin film, ceramic semiconductor multilayer thin film, organic Film and the multilayer thin film or the like other materials.
[0087]
Among these, it is particularly useful because it is highly useful when applied to a thin film device, a micro magnetic device, a configuration of a micro three-dimensional structure, an actuator, a micro mirror, and the like.
[0088]
Such a functional thin film or thin film device is usually formed through a relatively high process temperature in relation to its formation method. Therefore, in this case, as described above, the substrate 1 needs to have a high reliability that can withstand the process temperature.
[0089]
The transferred layer 4 may be a single layer or a laminate of a plurality of layers. Furthermore, a predetermined patterning may be performed like the thin film transistor. Formation (lamination) and patterning of the transferred layer 4 are performed by a predetermined method corresponding thereto. Such a transferred layer 4 is usually formed through a plurality of steps.
[0090]
The formation of the transferred layer 4 using a thin film transistor is, for example, disclosed in Japanese Patent Publication No. 2-50630 and literature: H. Ohshima et al: International Symposium Digest of Technical Papers SID 1983 “B / W and Color LC Video Display Addressed by Poly Si It can be carried out according to the method described in “TFTs”.
[0091]
Further, the thickness of the transferred layer 4 is not particularly limited, and is appropriately set according to various conditions such as the purpose of formation, function, composition, and characteristics. When the transferred layer 4 is a thin film transistor, the total thickness is preferably about 0.5 to 200 μm, more preferably about 1.0 to 10 μm. In the case of other thin films, the preferred total thickness may be in a wider range, for example, about 50 nm to 1000 μm.
[0092]
The transferred layer 4 is not limited to the thin film as described above, and may be a thick film such as a coating film or a sheet, and further, for example, constitutes a film (layer) such as a powder. It may be an object to be transferred or an object to be peeled off.
[0093]
[4] As shown in FIG. 4, an adhesive layer 5 is formed on a transfer target layer (object to be peeled) 4, and the transfer body 6 is bonded (bonded) through the adhesive layer 5.
[0094]
Suitable examples of the adhesive constituting the adhesive layer 5 include various curable types such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. An adhesive is mentioned. The composition of the adhesive may be any, for example, epoxy, acrylate, or silicone. Such an adhesive layer 5 is formed, for example, by a coating method.
[0095]
In the case of using the curable adhesive, for example, after applying a curable adhesive on the transfer layer 4 and joining a transfer body 6 to be described later on the curable adhesive, the curing method according to the characteristics of the curable adhesive is used. The curable adhesive is cured, and the transferred layer 4 and the transfer body 6 are bonded and fixed.
[0096]
In the case of a photocurable adhesive, it is preferable that the translucent transfer body 6 is disposed on the adhesive layer 5 and then the adhesive is cured by irradiating light on the transfer body 6. In addition, if the substrate 1 is translucent, it is preferable to cure the adhesive by irradiating light from both sides of the substrate 1 and the transfer body 6 to ensure the curing.
[0097]
Unlike the illustration, the adhesive layer 5 may be formed on the transfer body 6 side, and the transferred layer 4 may be adhered thereon. Further, an intermediate layer as described above may be provided between the transferred layer 4 and the adhesive layer 5. For example, when the transfer body 6 itself has an adhesive function, the formation of the adhesive layer 5 may be omitted.
[0098]
Although it does not specifically limit as the transfer body 6, A board | substrate (plate material), especially a transparent substrate are mentioned. Such a substrate may be a flat plate or a curved plate.
[0099]
Further, the transfer body 6 may be inferior to the substrate 1 in properties such as heat resistance and corrosion resistance. The reason is that, in the present invention, the transfer layer 4 is formed on the substrate 1 side, and then the transfer layer 4 is transferred to the transfer body 6. This is because it does not depend on the temperature condition or the like when forming the transferred layer 4.
[0100]
Therefore, when the maximum temperature during formation of the transferred layer 4 is Tmax, a material having a glass transition point (Tg) or a softening point equal to or lower than Tmax can be used as a constituent material of the transfer body 6. For example, the transfer body 6 can be made of a material having a glass transition point (Tg) or a softening point of preferably 800 ° C. or lower, more preferably 500 ° C. or lower, and further preferably 320 ° C. or lower.
[0101]
Further, the mechanical properties of the transfer body 6 are preferably those having a certain degree of rigidity (strength), but may be those having flexibility and elasticity.
[0102]
Examples of the constituent material of the transfer body 6 include various synthetic resins or various glass materials, and various synthetic resins and normal (low melting point) inexpensive glass materials are particularly preferable.
[0103]
The synthetic resin may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified polyolefin , Polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylpentene-1), ionomer, acrylic resin, polymethyl methacrylate, acrylonitrile-butadiene-styrene copolymer ( ABS resin), acrylonitrile-styrene copolymer (AS resin), butadiene-styrene copolymer, polyoxymethylene, polyvinyl alcohol (PVA), ethylene-vinyl alcohol copolymer (EVOH) Polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polycyclohexane terephthalate (PCT), polyether, polyether ketone (PEK), polyether ether ketone (PEEK), polyether imide, polyacetal (POM), Polyphenylene oxide, modified polyphenylene oxide, polysulfone, polyethersulfone, polyphenylene sulfide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin, polychlorination Vinyl, polyurethane, polyester, polyamide, polybutadiene, trans polyisoprene, fluorine rubber, chlorine Various thermoplastic elastomers such as polyethylene, epoxy resins, phenol resins, urea resins, melamine resins, unsaturated polyesters, silicone resins, polyurethanes, etc., or copolymers, blends, polymer alloys, etc. mainly comprising these These can be used alone or in combination of two or more thereof (for example, as a laminate of two or more layers).
[0104]
Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potash lime glass, lead (alkali) glass, barium glass, borosilicate glass, and the like. Of these, glass other than silicate glass is preferable because it has a lower melting point than silicate glass, is relatively easy to mold and process, and is inexpensive.
[0105]
When the transfer member 6 made of a synthetic resin is used, the large transfer member 6 can be integrally formed, and even a complicated shape such as a curved surface or an uneven surface can be easily formed. In addition, various advantages such as low material cost and low manufacturing cost can be obtained. Therefore, a large and inexpensive device (for example, a liquid crystal display) can be easily manufactured.
[0106]
The transfer body 6 is a part of a device such as a liquid crystal cell that constitutes an independent device itself, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. May be included.
[0107]
Further, the transfer body 6 may be a material such as metal, ceramics, stone, wood, paper, etc., or on an arbitrary surface constituting a certain item (on the surface of the watch, on the surface of the air conditioner, on the printed circuit board). Etc.) and further on the surface of a structure such as a wall, column, beam, ceiling, window glass or the like.
[0108]
[5] As shown in FIG. 5, the irradiation light 7 is irradiated from the back surface side (irradiation light incident surface 12 side) of the substrate 1. The irradiation light 7 passes through the substrate 1 and then is irradiated onto the separation layer 2 from the interface 2a side. More specifically, a part of the irradiation light 7 that is irradiated and absorbed by the light absorption layer 21 and cannot be absorbed by the light absorption layer 21 is reflected by the reflection layer 22 and passes through the light absorption layer 21 again.
[0109]
As a result, in-layer separation and / or interfacial separation occurs in the separation layer 2 and the bonding force is reduced or disappears. Therefore, when the substrate 1 and the transfer body 6 are separated as shown in FIG. The transferred layer 4 is detached from the substrate 1 and transferred to the transfer body 6.
[0110]
6 shows a case where intra-layer separation occurs in the separation layer 2, and FIG. 7 shows a case where interface separation occurs at the interface 2a in the separation layer 2. FIG. The principle that separation in the separation layer 2 and / or interfacial separation occurs is that ablation occurs in the constituent material of the light absorption layer 21, the gas contained in the light absorption layer 21 is released, and immediately after irradiation. It is estimated that this is due to phase changes such as melting and transpiration that occur in
[0111]
Here, the ablation means that a solid material that absorbs irradiated light (a constituent material of the light absorption layer 21) is photochemically or thermally excited, and its surface or internal atoms or molecules are cut and released. In general, all or part of the constituent material of the light absorption layer 21 appears as a phenomenon that causes phase change such as melting and transpiration (vaporization). In addition, the phase change may result in a fine foamed state, resulting in a decrease in bonding strength.
[0112]
Whether the separation layer 2 causes in-layer separation, interfacial separation, or both depends on the layer configuration of the separation layer 2, the composition and thickness of the light absorption layer 21, and various other factors. As one of the factors, conditions such as the type, wavelength, intensity, and reaching depth of the irradiation light 7 can be mentioned.
[0113]
Irradiation light 7 may be any material as long as it causes intralayer separation and / or interfacial separation in separation layer 2, for example, X-rays, ultraviolet rays, visible light, infrared rays (heat rays), laser light, millimeter waves. , Microwaves, electron beams, radiation (α rays, β rays, γ rays) and the like. Among them, laser light is preferable in that separation (ablation) of the separation layer 2 is likely to occur.
[0114]
Examples of laser devices that generate this laser beam include various gas lasers, solid-state lasers (semiconductor lasers), and the like. Excimer lasers, Nd-YAG lasers, Ar lasers, CO lasers, etc. ₂ A laser, a CO laser, a He—Ne laser or the like is preferably used, and an excimer laser is particularly preferable among them.
[0115]
Since the excimer laser outputs high energy in a short wavelength region, it is possible to cause ablation in the light absorption layer 21 in a very short time. Therefore, the reflective layer 22, the intermediate layer 3, the transferred layer adjacent to or adjacent to the light absorbing layer 21 can be generated. 4. The separation layer 2 can be peeled off almost without causing a temperature rise in the substrate 1 or the like, that is, without causing deterioration or damage.
[0116]
Moreover, when the irradiation light at the time of generating ablation in the light absorption layer 21 has wavelength dependence, it is preferable that the wavelength of the irradiated laser light is about 100 to 350 nm.
[0117]
In addition, when the separation layer 2 is given a separation characteristic by causing a phase change such as gas release, vaporization, and sublimation, the wavelength of the irradiated laser light is preferably about 350 to 1200 nm.
[0118]
The energy density of the irradiated laser light, particularly the energy density in the case of an excimer laser, is 10 to 5000 mJ / cm. ² It is preferable to be about 100 to 500 mJ / cm. ² More preferably, it is about. The irradiation time is preferably about 1 to 1000 nsec, more preferably about 10 to 100 nsec. When the energy density is low or the irradiation time is short, sufficient ablation does not occur, and when the energy density is high or the irradiation time is long, the separation layer 2 may be excessively destroyed.
[0119]
Irradiation light 7 represented by such laser light is preferably irradiated so that its intensity is uniform.
[0120]
The irradiation direction of the irradiation light 7 is not limited to the direction perpendicular to the separation layer 2 and may be a direction inclined by a predetermined angle with respect to the separation layer 2.
[0121]
In addition, when the area of the separation layer 2 is larger than the irradiation area of one irradiation light, the entire area of the separation layer 2 can be irradiated with irradiation light in a plurality of times. Moreover, you may irradiate the same location twice or more.
[0122]
Further, irradiation light (laser light) of different types and different wavelengths (wavelength regions) may be irradiated twice or more to the same region or different regions.
[0123]
In this embodiment, the reflective layer 22 is provided adjacent to the side opposite to the substrate 1 of the light absorption layer 21, so that the irradiation light 7 can be effectively irradiated to the light absorption layer 21 without loss, and the reflection layer The light shielding function of the (light shielding layer) 22 has an advantage that the irradiated light 7 can be prevented from being irradiated onto the transferred layer 4 and the like, and adverse effects such as deterioration and deterioration of the transferred layer 4 can be prevented.
[0124]
In particular, the fact that the light absorption layer 21 can be effectively irradiated without any loss means that the energy density of the irradiation light 7 can be reduced accordingly, that is, the area of one irradiation can be increased. Therefore, a certain area of the separation layer 2 can be peeled with a smaller number of irradiations, which is advantageous in manufacturing.
[0125]
[6] As shown in FIG. 8, the separation layer 2 adhering to the intermediate layer 3 is removed by a method such as cleaning, etching, ashing, polishing, or a combination thereof.
[0126]
In the case of the in-layer peeling of the separation layer 2 as shown in FIG. 6, the light absorption layer 21 adhering to the substrate 1 is similarly removed as necessary.
[0127]
When the substrate 1 is made of an expensive material such as quartz glass or a rare material, the substrate 1 is preferably used for recycling (recycling). In other words, the present invention can be applied to the substrate 1 to be reused, which is highly useful.
[0128]
The transfer of the transfer layer 4 to the transfer body 6 is completed through the above steps. Thereafter, the intermediate layer 3 adjacent to the transferred layer 4 can be removed, or any other layer can be formed.
[0129]
In the present invention, since the layer to be transferred 4 itself, which is the object to be peeled, is not peeled directly, but peels off at the separation layer 2 bonded to the layer to be transferred 4, the characteristics of the object to be peeled (transfer layer 4) Regardless of conditions, etc., it can be peeled (transferred) easily, reliably and uniformly, and there is no damage to the peeled object (transferred layer 4) during the peeling operation, and the transferred layer 4 has high reliability. Can be maintained.
[0130]
Note that the layer configuration of the separation layer 2 is not limited to the illustrated one. For example, a stack of a plurality of light absorption layers having different at least one of conditions such as film composition, film thickness, and characteristics, In addition to these, any layer may be used as long as a plurality of layers are laminated, such as a layer having another layer such as the reflection layer described above. For example, the separation layer 2 can be composed of a three-layer laminate in which a reflective layer is interposed between the first light absorption layer and the second light absorption layer.
[0131]
Further, the interface between the layers constituting the separation layer 2 is not necessarily clear, and the composition, the concentration of a predetermined component, the molecular structure, the physical or chemical characteristics, etc. continuously change in the vicinity of the interface. It may be (having a gradient).
[0132]
In the illustrated embodiment, the transfer method of the transfer layer 4 to the transfer body 6 has been described. However, the peeling method of the present invention may not perform such transfer. In this case, the object to be peeled is used instead of the transfer layer 4 described above. The object to be peeled may be either a layered one or one that does not constitute a layer.
[0133]
Also, the purpose of peeling the object to be peeled is, for example, removal (trimming) of unnecessary portions of the thin film (particularly functional thin film) as described above, and attachments such as dust, oxides, heavy metals, carbon, and other impurities. Anything such as removal and recycling of the substrate using the same may be used.
[0134]
In addition, the transfer body 6 is not limited to the above-described one, and includes, for example, various metal materials, ceramics, carbon, paper material, rubber, and the like, which have completely different properties from the substrate 1 (regardless of translucency). It may be done. In particular, when the transfer body 6 is a material that cannot directly form the transferred layer 4 or is not suitable for forming, the value of applying the present invention is high.
[0135]
Further, in the illustrated embodiment, the irradiation light 7 is irradiated from the substrate 1 side. However, for example, when the deposit (the object to be peeled) is removed, the transferred layer 4 is not adversely affected by the irradiation of the irradiation light 7. In the case of a thing, the irradiation direction of the irradiation light 7 is not limited to the above, and the irradiation light may be irradiated from the side opposite to the substrate 1. In this case, the separation layer 2 preferably reverses the positional relationship between the light absorption layer 21 and the reflection layer 22 as described above.
[0136]
As mentioned above, although the peeling method of this invention was demonstrated about the Example of illustration, this invention is not limited to this.
[0137]
For example, the structure may be such that the layer to be transferred 4 is peeled or transferred in the pattern by irradiating irradiation light partially with respect to the surface direction of the separation layer 2, that is, in a predetermined pattern. Method). In this case, in the step [5], the irradiation light incident surface 12 of the substrate 1 is masked corresponding to the pattern and irradiated with the irradiation light 7 or the irradiation position of the irradiation light 7 is set. It can be performed by a method such as precise control.
[0138]
Further, instead of forming the separation layer 2 on the entire surface of the separation layer forming surface 11 of the substrate 1, the separation layer 2 can be formed in a predetermined pattern (second method). In this case, it is possible to form the separation layer 2 in a predetermined pattern in advance by masking or the like, or to form the separation layer 2 on the entire surface of the separation layer forming surface 11 and then pattern or trim by etching or the like. .
[0139]
According to the first method and the second method as described above, the transferred layer 4 can be transferred together with its patterning and trimming.
[0140]
Further, the transfer may be repeated twice or more by the same method as described above. In this case, if the number of times of transfer is an even number, the front / back positional relationship of the transferred layer formed on the last transfer body may be the same as the state in which the transferred layer is first formed on the substrate 1. it can.
[0141]
Further, a small transparent layer 4 (thin film transistor) formed on a small substrate 1 (for example, 45 mm × 40 mm) having a large transparent substrate (for example, an effective area of 900 mm × 1600 mm) as a transfer body 6 is provided. The transferred layer 4 is formed so as to cover the entire effective area of the large-sized transparent substrate by transferring a plurality of times (for example, about 800 times), preferably sequentially to adjacent positions, and finally the same as the large-sized transparent substrate. A liquid crystal display of a size can also be manufactured.
[0142]
【Example】
Next, specific examples of the present invention will be described.
[0143]
Example 1
Prepare a quartz substrate (softening point: 1630 ° C., strain point: 1070 ° C., transmittance of excimer laser: almost 100%) with a length of 50 mm × width 50 mm × thickness 1.1 mm, and light is applied to one side of the quartz substrate. A separation layer composed of a two-layer laminate of an absorption layer and a reflection layer was formed.
[0144]
As the light absorption layer, an amorphous silicon (a-Si) film is formed by a low pressure CVD method (Si ₂ H ₆ Gas, 425 ° C.). The thickness of this light absorption layer was 120 nm.
[0145]
Moreover, the reflective layer formed the metal thin film by Ta on sputtering on the light absorption layer. The thickness of this reflective layer was 100 nm, and the reflectance of laser light described later was 60%.
[0146]
Next, on the separation layer, SiO as an intermediate layer ₂ The film is formed by ECR-CVD (SiH _Four + O ₂ Gas, 100 ° C.). The film thickness of the intermediate layer was 200 nm.
[0147]
Next, an amorphous silicon film having a film thickness of 60 nm is formed on the intermediate layer as a transfer layer by a low pressure CVD method (Si ₂ H ₆ The amorphous silicon film was irradiated with laser light (wavelength 308 nm) and crystallized to obtain a polysilicon film. Thereafter, the polysilicon film was subjected to predetermined patterning, ion implantation and the like to form a thin film transistor.
[0148]
Next, an ultraviolet curable adhesive is applied on the thin film transistor (film thickness: 100 μm), and a large transparent glass having a length of 200 mm × width of 300 mm × thickness of 1.1 mm is applied to the coating film. After bonding the substrates (soda glass, softening point: 740 ° C., strain point: 511 ° C.), the adhesive was cured by irradiating ultraviolet rays from the glass substrate side, and these were bonded and fixed.
[0149]
Next, Xe—Cl excimer laser (wavelength: 308 nm) was irradiated from the quartz substrate side to cause separation (in-layer separation and interface separation) in the separation layer. The energy density of the irradiated Xe-Cl excimer laser is 160 mJ / cm. ² The irradiation time was 20 nsec.
[0150]
Excimer laser irradiation includes spot beam irradiation and line beam irradiation. In the case of spot beam irradiation, spot irradiation is performed on a predetermined unit region (for example, 10 mm × 10 mm). / Irradiate while shifting by about 10 steps. In the case of line beam irradiation, irradiation is performed while shifting a predetermined unit area (for example, 378 mm × 0.1 mm or 378 mm × 0.3 mm (these are areas where 90% or more of energy is obtained) by about 1/10. Accordingly, each point of the separation layer is irradiated at least 10 times, and this laser irradiation is performed while shifting the irradiation region with respect to the entire surface of the quartz substrate.
[0151]
Thereafter, the quartz substrate and the glass substrate (transfer body) were separated by separating them from the separation layer, and the thin film transistor and the intermediate layer were transferred to the glass substrate side.
[0152]
Thereafter, the separation layer attached to the surface of the intermediate layer on the glass substrate side was removed by etching, washing, or a combination thereof. Further, the same treatment was performed on the quartz substrate and it was reused.
[0153]
(Example 2)
The thin film transistor was transferred in the same manner as in Example 1 except that the light absorption layer was an amorphous silicon film containing 18 at% of H (hydrogen).
[0154]
Note that the amount of H in the amorphous silicon film was adjusted by appropriately setting conditions during film formation by the low pressure CVD method.
[0155]
Example 3
A ceramic thin film (composition: PbTiO) in which the light absorption layer is formed by a sol-gel method by spin coating _Three The thin film transistor was transferred in the same manner as in Example 1 except that the film thickness was 200 nm.
[0156]
Example 4
Ceramic thin film (composition: BaTiO2) formed by sputtering the light absorption layer _Three Transfer of the thin film transistor in the same manner as in Example 1 except that the reflective layer was a metal thin film made of Al formed by sputtering (film thickness: 120 nm, laser beam reflectance: 85%). Went.
[0157]
(Example 5)
A ceramic thin film (composition: Pb (Zr, Ti) O) in which a light absorption layer is formed by a laser ablation method _Three (PZT), film thickness: 50 nm), and the reflective layer was a metal thin film (film thickness: 80 nm, laser beam reflectance: 65%) made of an Fe—Cr alloy formed by sputtering using an alloy target. The thin film transistor was transferred in the same manner as in Example 1.
[0158]
(Example 6)
The thin film transistor was transferred in the same manner as in Example 1 except that the light absorption layer was a polyimide film (thickness: 200 nm) formed by spin coating.
[0159]
(Example 7)
The thin film transistor was transferred in the same manner as in Example 1 except that the light absorption layer was a Pr layer (rare earth metal layer) (film thickness: 500 nm) formed by sputtering.
[0160]
(Example 8)
The thin film transistor was transferred in the same manner as in Example 2 except that a Kr-F excimer laser (wavelength: 248 nm) was used as the irradiation light. The energy density of the irradiated laser is 180 mJ / cm. ² The irradiation time was 20 nsec.
[0161]
Example 9
The thin film transistor was transferred in the same manner as in Example 2 except that Ar laser (wavelength: 1024 nm) was used as the irradiation light. The energy density of the irradiated laser is 250 mJ / cm. ² The irradiation time was 50 nsec.
[0162]
(Example 10)
The thin film transistor was transferred in the same manner as in Example 1 except that the transferred layer was a polysilicon film (thickness 90 nm) thin film transistor formed by a high temperature process (1000 ° C.).
[0163]
(Example 11)
The thin film transistor was transferred in the same manner as in Example 2 except that the transferred layer was a polysilicon film (thickness: 80 nm) thin film transistor formed by a high temperature process (1030 ° C.).
[0164]
(Example 12)
The thin film transistor was transferred in the same manner as in Example 4 except that the transferred layer was a polysilicon film (thickness: 80 nm) thin film transistor by a high temperature process (1030 ° C.).
[0165]
(Example 13)
The thin film transistor was transferred in the same manner as in Example 1 except that a transparent substrate made of polycarbonate (glass transition point: 130 ° C.) was used as the transfer body.
[0166]
(Example 14)
The thin film transistor was transferred in the same manner as in Example 2 except that a transparent substrate made of AS resin (glass transition point: 70 to 90 ° C.) was used as the transfer body.
[0167]
(Example 15)
The thin film transistor was transferred in the same manner as in Example 3 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as the transfer body.
[0168]
(Example 16)
The thin film transistor was transferred in the same manner as in Example 5 except that a transparent substrate made of polyethylene terephthalate (glass transition point: 67 ° C.) was used as the transfer body.
[0169]
(Example 17)
A thin film transistor was transferred in the same manner as in Example 6 except that a transparent substrate made of high-density polyethylene (glass transition point: 77 to 90 ° C.) was used as the transfer body.
[0170]
(Example 18)
The thin film transistor was transferred in the same manner as in Example 8 except that a transparent substrate made of polyamide (glass transition point: 145 ° C.) was used as the transfer body.
[0171]
(Example 19)
The thin film transistor was transferred in the same manner as in Example 9 except that a transparent substrate made of an epoxy resin (glass transition point: 120 ° C.) was used as the transfer body.
[0172]
(Example 20)
The thin film transistor was transferred in the same manner as in Example 10 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as the transfer body.
[0173]
About Examples 1-20, when the state of the transferred thin-film transistor was observed with the naked eye and a microscope, there was no defect or unevenness, and the transfer was made uniformly.
[0174]
【The invention's effect】
As described above, according to the peeling method of the present invention, it can be easily and reliably peeled regardless of the properties, conditions, etc. of the object to be peeled (transferred layer). Transfer to various transfer bodies becomes possible. For example, transfer to thin materials that cannot be directly formed or are not suitable for forming, materials that are easy to mold, materials that are inexpensive, or large objects that are difficult to move Can form it.
[0175]
In particular, the transfer body may be one having inferior characteristics such as heat resistance and corrosion resistance as compared with the substrate material, such as various synthetic resins and glass materials having a low melting point. Therefore, for example, when manufacturing a liquid crystal display in which a thin film transistor (especially polysilicon TFT) is formed on a transparent substrate, a quartz glass substrate having excellent heat resistance is used as the substrate, and various synthetic resins and low melting points are used as the transfer body. By using a transparent substrate made of an inexpensive and easy-to-process material such as a glass material, a large and inexpensive liquid crystal display can be easily manufactured. Such advantages are not limited to the liquid crystal display, and the same applies to the manufacture of other devices.
[0176]
In addition, while receiving the advantages as described above, a transfer layer such as a functional thin film is formed and patterned on a highly reliable substrate, particularly a substrate having high heat resistance such as a quartz glass substrate. Therefore, a highly reliable functional thin film can be formed on the transfer body regardless of the material characteristics of the transfer body.
[0177]
In addition, such a highly reliable substrate is expensive, but it can be reused, and thus the manufacturing cost is reduced.
[0178]
In addition, when the separation layer has a light-shielding layer, particularly a reflective layer, it is possible to prevent adverse effects on the transferred layer such as a thin film transistor due to the transmission of irradiation light, and use the reflected light from the reflective layer. Therefore, the separation layer can be peeled off more efficiently.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing steps of an embodiment of a peeling method of the present invention.
FIG. 2 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.
FIG. 3 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.
FIG. 4 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.
FIG. 5 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.
FIG. 6 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.
FIG. 7 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.
FIG. 8 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.
[Explanation of symbols]
1 Substrate
11 Separation layer forming surface
12 Irradiation light incident surface
2 Separation layer
2a interface
21 Light absorption layer
22 Reflective layer
3 middle class
4 Transfer target layer
5 Adhesive layer
6 Transcript
7 Irradiation light

Claims (20)

To be peeled which are present over a partial delamination on a transparent substrate a stripping method for peeling from the substrate,
On the light-transmitting substrate, a separation layer composed of a laminate of a plurality of layers including a light absorption layer and a light shielding layer is disposed, and the light shielding layer is positioned on the opposite side of the substrate with the light absorption layer interposed therebetween. A step of forming
Forming the object to be peeled including a thin film device on the separation layer;
Irradiating the separation layer with irradiation light from the translucent substrate side, causing separation in the layer and / or interface of the separation layer, and separating the object to be separated from the translucent substrate. A peeling method characterized by the above. In the transferred layer formed through a partial delamination on a transparent substrate is peeled from the substrate, transferred to other transfer member,
On the light-transmitting substrate, a separation layer composed of a laminate of a plurality of layers including a light absorption layer and a light shielding layer is disposed, and the light shielding layer is positioned on the opposite side of the substrate with the light absorption layer interposed therebetween. A step of forming
Forming the transferred layer including a thin film device on the separation layer;
Wherein after joining the transfer body on the opposite side of the translucent substrate of the transfer layer, wherein the translucent substrate side is irradiated with irradiation light to the separating layer, wherein the layer in the separating layer and / Alternatively, a peeling method is characterized in that peeling occurs at the interface, and the transferred layer is detached from the substrate and transferred to the transfer body. Wherein the transfer layer, the release process of claim 2 wherein is on the separation layer formed directly or via an predetermined intermediate layer and said Rukoto. The peeling method according to claim 3 , further comprising a step of removing the separation layer adhering to the substrate side and / or the transfer body side after the transfer of the transfer target layer to the transfer body. The peeling method according to claim 2 , wherein the transfer layer is a thin film transistor. The peeling method according to claim 2 , wherein the transfer body is a transparent substrate. The transfer member, when the maximum temperature during the formation of the transfer layer was Tmax, according to any one of the glass transition point (Tg) or softening point claims 2 is composed of the following materials Tmax 6 Peeling method. The peeling method according to claim 2 , wherein the transfer body is made of a material having a glass transition point (Tg) or a softening point of 800 ° C. or less. The peeling method according to claim 2 , wherein the transfer body is made of a synthetic resin or a glass material. 10. The peeling method according to claim 2 , wherein the substrate is made of a material having a strain point equal to or higher than Tmax, where Tmax is a maximum temperature in forming the transfer layer. The peeling method according to claim 2 , wherein the light shielding layer is a reflective layer that reflects the irradiation light. The peeling method according to claim 11 , wherein the reflective layer is formed of a metal thin film. The peeling method according to any one of claims 2 to 12 , wherein peeling of the separation layer is caused by disappearance or reduction of bonding force between atoms or molecules of a substance constituting the light absorption layer. The separating layer separation method according to any one of claims 1 to 13 having a configured light absorption layer of amorphous silicon. The peeling method according to claim 14 , wherein the amorphous silicon contains H (hydrogen) at 2 at% or more. The separating layer separation method according to any one of claims 1 to 13 having a configured light absorbing layer of a nitride ceramic. The separating layer separation method according to any one of claims 1 to 13 having a configured light absorbing layer of a metal Ti or Mn. The irradiation light, the release method according to any one of claims 1 to 17 is a laser beam. The peeling method according to claim 18 , wherein the laser beam has a wavelength of 100 to 350 nm. The peeling method according to claim 18 , wherein the laser beam has a wavelength of 350 to 1200 nm.

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