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CN1255866C - Flip chip packaging process and its device - Google Patents

Flip chip packaging process and its device Download PDF

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Publication number
CN1255866C
CN1255866C CNB021467234A CN02146723A CN1255866C CN 1255866 C CN1255866 C CN 1255866C CN B021467234 A CNB021467234 A CN B021467234A CN 02146723 A CN02146723 A CN 02146723A CN 1255866 C CN1255866 C CN 1255866C
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CN
China
Prior art keywords
chip
flip
substrate
printing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021467234A
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Chinese (zh)
Other versions
CN1499589A (en
Inventor
谢翰坤
林蔚峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Integrated Systems Corp
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Silicon Integrated Systems Corp
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Filing date
Publication date
Application filed by Silicon Integrated Systems Corp filed Critical Silicon Integrated Systems Corp
Priority to CNB021467234A priority Critical patent/CN1255866C/en
Publication of CN1499589A publication Critical patent/CN1499589A/en
Application granted granted Critical
Publication of CN1255866C publication Critical patent/CN1255866C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

A flip chip packaging process and a device thereof are suitable for a method for filling underfill, and comprise the following steps: providing a wafer with an active area, wherein the active area is provided with a plurality of metal bumps which are arranged at intervals; providing a substrate with a chip bonding area on the surface, wherein the chip bonding area is provided with a plurality of welding pads which are arranged at intervals and are provided with pre-solder paste; forming a glue filling material between the welding pads in the chip bonding area by using a printing screen plate and a screen printing method; the metal bump is bonded to the bonding pad, so that the chip is adhered to the substrate. The flip chip packaging device is suitable for the flip chip packaging process, a glue filling material is formed on a substrate through a printing block by screen printing, the printing screen comprises the printing block and other areas, the printing area comprises a plurality of open areas and a plurality of shielding parts, and a plurality of connecting wires are used for connecting the shielding parts with the other areas of the printing screen and connecting the shielding parts. The method has the effects of increasing the output of the underfill in the flip chip package, improving the excellent rate of the flip chip package process, and improving the reliability and the service life of the flip chip package product.

Description

Flip-Chip Using technology and device thereof
Technical field
The invention relates to a kind of Flip-Chip Using technology and device thereof, particularly a kind ofly one filler material is formed at technology and device thereof on the substrate with screen painting.
Background technology
Along with the active demand of high density, high-power electronic packaging, flip-chip (Flip Chip) encapsulation technology becomes the focus that all circles are noted gradually.So-called Flip-Chip Using is the technology that naked crystalline substance (bar die) is engaged with substrate (substrate) in surface mode down.Under the situation of using organic substrate (organic substrate), because the thermal coefficient of expansion (CTE of organic substrate; Coefficient of thermal expansion) it is excessive to be about 14-17ppm/ ℃ of CTE (the being about 4ppm/ ℃) gap with silicon wafer, and when expanding with heat and contract with cold, the CTE stress that is caused that do not match is easy to cause contact to damage.
Therefore, for the consideration of reliability, need in the gap of substrate and wafer, insert primer (underfill) usually, so that stress is dispersed to colloid,, so just can reduce contact break (crack) to reduce the suffered stress of contact, the extension that inhibition is broken, and the fatigue life of prolongation contact.In addition, described primer is a megohmite insulant, also can prevent to have between contact impurity to cause the transmission of leakage current.Data show, the structure of the wafer be adhered on substrate person that do not have the wafer be adhered on substrate is arranged, and the high 5-10 of reliability (reliability) doubly.Because primer can promote the reliability of joint effectively, therefore in Flip-Chip Using technology, wafer be adhered on substrate is the technology of can not ignore.Yet filler technology greatest problem is its filling and sclerosis (curing) overlong time, and the bottleneck major part that causes assembling production all occurs in filler technology.
Primer is mostly inserted in liquid adhesive material utilization point glue (dispensing) mode at present, its technology at first will be hanged down viscous fluid colloid point and be sticked to wafer next door on the base plate for packaging at oneself, utilize liquid between wafer and base plate for packaging the formed capillary pressure of fine pore (capillary pressure) as actuating force, permeated, and filled up gap between contact.The major defect of this technology has:
(1) filling is slow, under the driving of capillary pressure, loading time approximately with square being directly proportional of distance, for example to a 7mm 2Wafer, on the sol temperature decide filling take time into most minutes to dozens of minutes;
(2) limited because of driving pressure, after filling is finished, easy entrapped air pockets in the packing body, the then property on the interface is also not enough, and bubble is probably in follow-up thermal process, cause the popcorn effect (popcorn) of packaging body, packaging body was lost efficacy, or at packaging body when meeting with stresses, stress is concentrated, and accelerate the failure and lost efficacy, these all can directly influence Flip-Chip Using acceptance rate or production reliability and useful life;
(3) one groups of primer pad devices once can only be made a glue to single packaging body, if simultaneously two (containing) above packaging body is made a glue, certainly will will prepare many groups equipment, increase the burden of cost;
(4) fill before the primer, must earlier base plate for packaging be shaped, be separated into single encapsulation unit substrate or packaging body, to follow-up technology, for example: the output (throughput) of planting ball (ballplacement) technology of Flip Chip BGA packaging body has adverse influence.
Summary of the invention
Main purpose of the present invention provides a kind of Flip-Chip Using technology and device thereof, can finish the technology of wafer be adhered on substrate in the short time, to improve traditional technology filling problem slowly, reaches the purpose that increases the output of wafer be adhered on substrate in the Flip-Chip Using.
Second purpose of the present invention provides a kind of Flip-Chip Using technology and device thereof, can avoid the problem of primer entrapped air pockets, reaches the acceptance rate and the reliability that promotes the Flip-Chip Using product and the purpose in useful life that promote Flip-Chip Using technology.
The 3rd purpose of the present invention provides a kind of Flip-Chip Using technology and device thereof, simultaneously one or more encapsulation unit substrates or packaging body is carried out the technology of wafer be adhered on substrate, reaches the purpose that further increases the output of wafer be adhered on substrate in the Flip-Chip Using.
The 4th purpose of the present invention provides a kind of Flip-Chip Using technology and device thereof, base plate for packaging is shaped not needing, or be separated under the situation of single encapsulation unit substrate or packaging body, simultaneously one or more base plate for packaging with one or more encapsulation units or packaging body are carried out the technology of wafer be adhered on substrate, not only can increase the output of wafer be adhered on substrate in the Flip-Chip Using, more can help back technology to increase its output, further increase the purpose of the output of wafer be adhered on substrate in the whole Flip-Chip Using.
The object of the present invention is achieved like this: a kind of Flip-Chip Using technology, be applicable to the method for a wafer be adhered on substrate, and it comprises the following steps:
One wafer with an active area is provided, and described active area has most spaced metal couplings; One substrate is provided, and a surface of described substrate has a wafer bonding land, and described wafer bonding land has most and is spaced, and has finished the pre-weld pad of going up tin cream; One printing screen plate is provided, uses described printing screen plate, between the described weld pad in described wafer bonding land, form a filler material with the screen painting method; And more described metal coupling engaged with described weld pad, described wafer is adhered on the described substrate.It still includes the reflow process that makes this metal coupling and weld pad seam.
The present invention also provides a kind of Flip-Chip Using device, be applicable in the Flip-Chip Using technology, with screen painting one filler material is formed on the substrate via this printing block, employed printing screen plate includes printing block and other zone, wherein said printing block includes most aperture area and most shielding parts, and most connecting lines are as the binding in described shielding part and other zone of described printing screen plate and the binding between the described shielding part.
Describe in detail below in conjunction with the preferred embodiment conjunction with figs..
Description of drawings
Fig. 1-Fig. 5 is the flow process generalized section of the Flip-Chip Using process of the embodiment of the invention 1.
Fig. 6-Fig. 7 is the Flip-Chip Using schematic representation of apparatus of the embodiment of the invention 2.
Embodiment
Embodiment 1
Consult Fig. 1-shown in Figure 5, Flip-Chip Using process of the present invention can be finished the technology of wafer be adhered on substrate in the Flip-Chip Using apace, to increase the output of the method for wafer be adhered on substrate in the Flip-Chip Using; And can avoid the problem of primer entrapped air pockets,, promote the reliability and the useful life of Flip-Chip Using product to promote the acceptance rate of Flip-Chip Using technology.
Flip-Chip Using process of the present invention comprises the following steps:
Consult shown in Figure 1; the surface of flip chip package substrate 100 has a welding resisting layer 102 (soldermask); also claim in " green lacquer "; internal wiring (not being illustrated in drawing) in order to protection flip chip package substrate 100; avoid in welding procedure; described internal wiring is because of being subjected to the pollution of scolder, and the phenomenon that is short-circuited.
Be positioned at lip-deep wafer bonding land 150 scopes, welding resisting layer 102 has most perforates 106 of arranging with an ad hoc fashion, so that weld pad 104 is exposed to the open air out, its arrangement mode is to have identical arrangement mode with the active area 310 flip-chip-on projections 310 (as shown in Figure 4) of the IC wafer 300 that will engage, wherein, the spacing distance between the inversed-chip lug 310 is for being not less than 180 μ m; Wherein weld pad 104 is to be connected with the internal wiring of described flip chip package substrate 100, in back technology with after IC wafer 300 (being illustrated in Fig. 4) is connected, make the internal wiring and 300 conductings of IC wafer of flip chip package substrate 100, the spacing distance between each weld pad 104 is preferably and is not less than 180 μ m; And finished on the weld pad 104 one pre-on the technology of tin cream (solder paste), there is a tin cream 110 formed thereon respectively, and the main component of tin cream 110 is a metal dust and a scaling powder (not being illustrated in drawing), in order to help engaging of inversed-chip lug 310 (being illustrated in Fig. 4) and weld pad 104.
Consult shown in Figure 2, flip chip package substrate 100 is aimed at a printing screen plate 200 (or aim at Flip-Chip Using base version 100 printing screen plate 200), tin cream 110 on the weld pad 104 is aimed at the shielding part 230 of printing screen plate 200, and the zone in 150 scopes of wafer bonding land beyond each welding pad opening 106 is aimed at the aperture area 220 of printing screen plate 200; One filler material 120 is placed on the printing screen plate 200, with a direction filler material 120 is formed at zone beyond each welding pad opening 106 in 150 scopes of wafer bonding land via the aperture area 220 of printing screen plate 200 with a scraper 210 (squeegee) with screen painting again.
Consulting shown in Figure 3ly, is that filler material 120 has been formed at zone beyond each welding pad opening 106 in 150 scopes of wafer bonding land;
Next, consult shown in Figure 4, most inversed-chip lugs 310 of one IC wafer 300 are aimed at corresponding weld pad 104 on the flip chip package substrate 100, and wherein the material of inversed-chip lug 310 can be the alloy of gold, copper, acid bronze alloy (Cu based alloy), leypewter or stanniferous.
Consult shown in Figure 5ly, the IC wafer of having aimed at 300 is engaged with flip chip package substrate 100, become a packaging body 400.
Comprise following technology afterwards:
(1) makes the baking process of filler hardened material, for example can add heat-sealing body 400 with a temperature that is not higher than the metal dust fusing point of tin cream 110 or is not higher than inversed-chip lug 310 fusing points, make after 120 sclerosis of filler material, the temperature that is not less than the metal dust fusing point of tin cream 110 with one again or is not less than inversed-chip lug 310 fusing points adds heat-sealing body 400, makes inversed-chip lug 310 and weld pad 104 seam; Or
(2) make the baking process of filler hardened material, the temperature that for example is not less than the metal dust fusing point of tin cream 110 with one or is not less than inversed-chip lug 310 fusing points adds heat-sealing body 400, make inversed-chip lug 310 and weld pad 104 seam, and make 120 sclerosis of filler material.It still includes the reflow process that makes this inversed-chip lug 310 and weld pad 104 seam.
Embodiment 2
Consult Fig. 6-shown in Figure 7, Flip-Chip Using device of the present invention is applicable in the Flip-Chip Using technology, is with screen painting one filler material to be formed on the substrate.The present invention can finish the technology of wafer be adhered on substrate in the Flip-Chip Using apace, to increase the output of the method for wafer be adhered on substrate in the Flip-Chip Using; And more can avoid the problem of primer entrapped air pockets,, promote the reliability and the useful life of Flip-Chip Using product to promote the acceptance rate of Flip-Chip Using technology.
The present invention still can be by different half tone designs in addition, simultaneously one or more encapsulation unit substrates or packaging body are carried out the technology of wafer be adhered on substrate, further increase the output of the method for wafer be adhered on substrate in the Flip-Chip Using;
The present invention more can be by different half tone designs, be not separated under the situation of single encapsulation unit substrate or packaging body the first base plate for packaging work is shaped, simultaneously one or more base plate for packaging with one or more encapsulation units or packaging body are carried out the technology of wafer be adhered on substrate, not only can increase the output of the method for wafer be adhered on substrate in the Flip-Chip Using, more can help back technology to increase its output, further increase the output of the method for wafer be adhered on substrate in the whole Flip-Chip Using.
Consult shown in Figure 6, printing screen plate 500 of the present invention have 9 the printing blocks 510, can carry out filler technology to 9 groups of in type flip chip package substrates simultaneously; Can also be simultaneously to 1 group or most group, the base plate for packaging that has 9 encapsulation units altogether carries out the method for wafer be adhered on substrate, decides on process requirements.
Please note: the design of printing screen plate of the present invention can change according to the design of base plate for packaging, the size of packaging body, ability, process requirements or other condition of printing board (not being illustrated in drawing), can carry out the technology of wafer be adhered on substrate simultaneously to one or more base plate for packaging with one or more encapsulation units or packaging body, be not limited in Fig. 6 for example.
Consult shown in Figure 7, be among Fig. 6 in the printing block 510 by the enlarged drawing of a regional A.By Fig. 6-Fig. 7 as can be known: printing block 510 is made up of with connecting line 516 most aperture area 512, shielding part 514.Wherein aperture area 512 is in order to when the screen painting, and a filler material (not being illustrated in drawing) is formed on the flip chip package substrate (not being illustrated in drawing); Shielding part 514 is in order to when the screen painting, and the zone (for example weld pad or other zone) that need not form described filler material on the described flip chip package substrate is shielded, and is formed at the zone that need not form the filler material to avoid described filler material; Connecting line 516 is in order to the binding between individual other shielding part 514, or the binding in individual other shielding part 514 and printing screen plate 500 other zones.
Please note: the arrangement mode and the size of aperture area 512, shielding part 514 and connecting line 516, be design difference, and can adjust to some extent according to pairing flip chip package substrate (not being illustrated in drawing), be not limited in Fig. 7 for example; And the spacing distance between the shielding part 514 is preferably and is not less than 180 μ m.
And the material of printing screen plate 500 can be the composite material of metal or metal and organic polymer; In addition in order to prevent other materials such as surface adhesion filler material of printing screen plate 500, and the surface that prevents printing screen plate 500 is corroded, or the surface that prevents printing screen plate 500 is subjected to scratch, and have influence on useful life of printing screen plate 500, or to the method overslaugh to some extent of wafer be adhered on substrate, can on described printing screen plate 500 surfaces, add a face coat or an overlay coating.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limiting the present invention, anyly has the knack of this 4 skill persons, and without departing from the spirit and scope of the present invention, a little change and the retouching done all belongs within protection scope of the present invention.

Claims (9)

1, a kind of Flip-Chip Using technology is applicable to the method for wafer be adhered on substrate, and it is characterized in that: it comprises the following steps:
(1) provide a wafer with active area, this active area has most spaced metal couplings;
(2) substrate that provides a surface to have the wafer bonding land, this wafer bonding land have most and are spaced, and have finished the pre-weld pad of going up tin cream;
(3) use a printing screen plate with the screen painting method, the zone beyond the weld pad in this wafer bonding land forms a filler material;
(4) this metal coupling is engaged with weld pad, this wafer is adhered on this substrate;
Wherein, this printing screen plate has a printing block, this Printing Zone has most aperture area, most shielding parts and most connecting lines, and this aperture area is with respect to the zone between the weld pad in this wafer bonding land, via this aperture area this filler material is formed on this substrate; This shielding part is with respect to the weld pad in this wafer bonding land, avoids this filler material to be formed on those weld pads; This connecting line is as the binding in this shielding part and other zone of printing screen plate and the binding between those shielding parts.
2, Flip-Chip Using technology according to claim 1 is characterized in that: the material of this printing screen plate is the composite material of metal or metal and organic polymer.
3, Flip-Chip Using technology according to claim 1, it is characterized in that: it also includes the baking process that makes this filler hardened material.
4, Flip-Chip Using technology according to claim 1 is characterized in that: it still includes the reflow process that makes this metal coupling and weld pad seam.
5, Flip-Chip Using technology according to claim 1 is characterized in that: it still includes makes this metal coupling and weld pad seam, and makes the reflow process of this filler hardened material.
6, Flip-Chip Using technology according to claim 1 is characterized in that: in this spaced metal coupling, the spacing distance between the metal coupling is more than or equal to 180 μ m.
7, Flip-Chip Using technology according to claim 1 is characterized in that: in this spaced weld pad, the spacing distance between the weld pad is more than or equal to 180 μ m.
8, Flip-Chip Using technology according to claim 1 is characterized in that: in this shielding part, the spacing distance between the shielding part is more than or equal to 180 μ m.
9, a kind of Flip-Chip Using device, be applicable in the Flip-Chip Using technology, with screen painting one filler material is formed on the substrate, it is characterized in that: it includes the printing block at least, this printing block is made up of with most connecting lines most aperture area, most shielding parts, this connecting line is that this connecting line is cut apart this aperture area simultaneously in order to the binding in this shielding part and other zone of printing screen plate and the binding between this shielding part.
CNB021467234A 2002-11-04 2002-11-04 Flip chip packaging process and its device Expired - Fee Related CN1255866C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB021467234A CN1255866C (en) 2002-11-04 2002-11-04 Flip chip packaging process and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB021467234A CN1255866C (en) 2002-11-04 2002-11-04 Flip chip packaging process and its device

Publications (2)

Publication Number Publication Date
CN1499589A CN1499589A (en) 2004-05-26
CN1255866C true CN1255866C (en) 2006-05-10

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101431030B (en) * 2007-11-07 2010-08-11 联测科技股份有限公司 Method for manufacturing semiconductor device
CN101990365B (en) * 2009-08-04 2013-04-24 东莞信浓马达有限公司 Tin printing steel mesh and method for printing tin paste
US20110285013A1 (en) * 2010-05-20 2011-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Controlling Solder Bump Profiles by Increasing Heights of Solder Resists
CN103794515B (en) * 2012-10-30 2016-12-21 碁鼎科技秦皇岛有限公司 Chip package base plate and structure and preparation method thereof
CN103035604B (en) 2012-12-17 2014-07-16 矽力杰半导体技术(杭州)有限公司 Flip chip encapsulation structure and fabrication process thereof
CN103400819B (en) 2013-08-14 2017-07-07 矽力杰半导体技术(杭州)有限公司 A kind of lead frame and its preparation method and application its encapsulating structure
CN109727877A (en) * 2018-12-20 2019-05-07 通富微电子股份有限公司 A kind of method for packaging semiconductor and semiconductor packing device
TWI729846B (en) 2020-06-10 2021-06-01 友達光電股份有限公司 Light-emitting device
CN111730963A (en) * 2020-06-30 2020-10-02 福建华佳彩有限公司 A screen structure and screen printing method

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