CN119292017A - A mask pre-alignment method for projection lithography based on motion compensation model - Google Patents
A mask pre-alignment method for projection lithography based on motion compensation model Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
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- 238000005516 engineering process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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Abstract
本发明公开了一种基于运动补偿模型的投影光刻机掩膜预对准方法，属于光刻领域。本发明首先建立了掩膜台运动补偿模型，补偿R轴移动带来的旋转偏差以及X、Y方向上的位移误差。接着，基于预对准图像算法获取对准标记的精确坐标，并结合运动补偿模型驱动伺服电机，使掩膜台沿X、Y和R方向进行相应的调整，最终进入对准位置。本发明通过对掩膜台运动的精确控制，确保了掩膜的预对准精度，有效提高了掩膜与硅片对准的整体精度，进而提升了光刻工艺的稳定性和可靠性。本发明在降低对准误差的同时，提高了光刻工艺的生产效率，具有广泛的工业应用前景。
The present invention discloses a method for pre-alignment of a projection lithography machine mask based on a motion compensation model, and belongs to the field of lithography. The present invention first establishes a motion compensation model for a mask stage to compensate for the rotational deviation caused by the movement of the R axis and the displacement errors in the X and Y directions. Then, the precise coordinates of the alignment mark are obtained based on the pre-alignment image algorithm, and the servo motor is driven in combination with the motion compensation model to make corresponding adjustments to the mask stage along the X, Y and R directions, and finally enter the alignment position. The present invention ensures the pre-alignment accuracy of the mask by precisely controlling the movement of the mask stage, effectively improves the overall accuracy of the alignment between the mask and the silicon wafer, and thus improves the stability and reliability of the lithography process. While reducing the alignment error, the present invention improves the production efficiency of the lithography process, and has broad industrial application prospects.
Description
Technical Field
The invention belongs to the field of photoetching, and comprises an image processing algorithm, in particular to a mask pre-alignment method of a projection photoetching machine based on a motion compensation model, which is used for accurately and rapidly realizing the mask pre-alignment in the projection photoetching machine.
Background
The projection lithography machine is a core device in the modern integrated circuit manufacture, and projects a circuit pattern onto a silicon wafer through a mask plate for exposure, so that a micro structure is formed, and the integrated circuit manufacture is realized. In the photolithography process, precise alignment of the mask to the wafer is a critical factor in ensuring accurate projection of the final circuit pattern. Therefore, the prealignment technique of the mask is critical to the overall accuracy and production efficiency of the photolithography process. The mask stage is used in a projection lithography machine to hold and move the mask into precise alignment with the exposure area. In actual lithographic operations, the X, Y translation of the mask table and the R-axis rotational movement have a decisive influence on the precise alignment of the mask. However, due to assembly errors and unavoidable factors in the debugging process, the X, Y direction of the mask table cannot be completely concentric with the movement of the R axis, and the linear movement characteristic of the R axis motor and the change of the rotation angle of the mask are difficult to directly correspond, so that deviation exists in the mask alignment process. If the deviation is not compensated effectively, the exposure accuracy of the silicon wafer is directly affected, and finally, the circuit pattern is deviated, and even product defects are caused when the deviation is serious.
In the prior art, the alignment of a mask stage mostly depends on direct mechanical adjustment and a simple image recognition algorithm, and the method has the defects of low initial alignment precision, complicated adjustment process and time consumption, and particularly has an unsatisfactory alignment effect when a large error exists between X, Y directions and R-axis movements. In addition, the prior art for compensating the rotation angle of the mask often depends on a complex mechanical structure or manual intervention, and quick and automatic alignment adjustment is difficult to realize. These deficiencies limit the overall efficiency of the lithographic process and also increase the complexity of process tuning, especially in the production of high precision alignment requirements.
Disclosure of Invention
The invention relates to a projection lithography mask pre-alignment method based on a motion compensation model, which aims to ensure the consistency of a mask coordinate system and a lithography exposure coordinate system, thereby providing an important premise for accurate exposure of a silicon wafer. In a projection lithography machine, the mask table is formed by three servomotors, which control the movement of the mask in three directions X, Y and R (rotation), respectively. In the mask pre-alignment process of the photoetching machine, firstly, the mask cannot be completely concentric with the mask table in the X direction and the Y direction due to assembly and debugging, and the linear motion of the R-axis motor cannot directly correspond to the rotation angle of the mask. Therefore, the invention firstly establishes a mask stage motion compensation model to compensate the rotation deviation caused by the R-axis movement and the displacement error in the X, Y direction. And then, acquiring the accurate coordinates of the alignment mark based on a pre-alignment image algorithm, driving a servo motor by combining a motion compensation model, enabling the mask table to be correspondingly adjusted along X, Y and R directions, and finally entering an alignment position. The method ensures the prealignment precision of the mask through the accurate control of the movement of the mask table, effectively improves the integral precision of the alignment of the mask and the silicon wafer, and further improves the stability and the reliability of the photoetching process. The invention reduces alignment error, improves the production efficiency of the photoetching process, and has wide industrial application prospect.
The specific technical scheme provided by the invention is as follows:
a method for pre-alignment of a projection lithography mask based on a motion compensation model, the method comprising the steps of:
And S1, measuring the R-axis motion of the mask stage by using a left mask pre-alignment camera, a right mask pre-alignment camera and a special mask for measurement of the projection lithography machine, analyzing and calculating according to a measurement result, and establishing a mask stage R-axis motion compensation model.
And S2, based on a mask pre-alignment image algorithm, combining a mask stage R-axis motion compensation model, identifying a pre-alignment positioning mark on a mask and calculating an adjustment amount for the mark so that the mark can quickly and accurately enter an exposure setting position.
The beneficial effects of the invention are as follows:
1. the invention improves the prealignment precision of the mask and ensures the consistency of the mask and an exposure coordinate system. By establishing a motion compensation model of the mask table, rotation deviation caused by movement of an R axis and displacement error in the direction X, Y are compensated, and consistency of a mask coordinate system and an exposure coordinate system of a photoetching machine is ensured, so that a stable foundation is provided for accurate exposure of a silicon wafer.
2. The invention precisely controls the movement of the mask table and improves the stability and reliability of the photoetching process. By combining the mask pre-alignment image algorithm with the mask stage motion compensation model, the mask pre-alignment mark can be accurately identified, the servo motor is driven to rapidly and accurately adjust the position of the mask stage, the accuracy of the mask pre-alignment process is ensured, and the stability and reliability of the photoetching process are greatly improved.
3. The invention reduces the alignment error of the mask and improves the production efficiency. By means of compensation model calculation and an image algorithm, alignment errors caused by non-concentricity of a mask and a mask table and R-axis motion characteristics are reduced, so that the requirement for multiple adjustment is reduced, the alignment time is shortened, and the production efficiency of a photoetching process is remarkably improved.
4. The method is suitable for various mask pre-alignment scenes, improves alignment precision by introducing a compensation model and an image processing technology, adapts to production processes with different size and precision requirements, and has wide industrial application potential.
5. In the invention, firstly, the error generated by the rotation of the R axis is accurately compensated, so that the problem of rotation deviation caused by the non-concentricity of the mask and the mask table in the X, Y direction is solved, and the mask and the exposure coordinate system can be aligned more accurately, thereby obviously improving the alignment precision. And secondly, the mask stage position can be automatically calculated and adjusted through an automatic error compensation model and an image recognition algorithm, so that manual intervention is reduced, the degree of automation of operation is improved, the dependence on experience of operators is reduced, and the rapidness and accuracy of alignment are ensured. In addition, the invention effectively reduces errors generated in the mask pre-alignment process, reduces the requirement of multiple times of adjustment, obviously shortens the alignment time, and further improves the overall production efficiency of the photoetching process. Finally, the compensation model and the image processing technology have wide adaptability, can meet the production process with different size and precision requirements, have higher flexibility and universality, and provide wide prospects and possibility for industrial application.
Drawings
FIG. 1 is a schematic illustration of measurement scales in a mask pre-alignment left and right camera interface;
FIG. 2 is a schematic diagram of a method for calculating a mask rotation angle;
FIG. 3 is a schematic diagram of an R-axis motion compensation model;
fig. 4 is a schematic diagram of a left and right side mark image of a mask.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other. In order to achieve the above purpose, the present invention adopts the following technical scheme.
The invention relates to a projection lithography mask pre-alignment method based on a motion compensation model, which comprises the following steps:
and S1, measuring the R-axis motion of the mask stage by using a left mask pre-alignment camera, a right mask pre-alignment camera and a mask for measurement of the projection lithography machine, analyzing and calculating according to a measurement result, and establishing a R-axis motion compensation model of the mask stage.
And S2, based on a mask pre-alignment image algorithm, combining a mask stage R-axis motion compensation model, identifying a pre-alignment positioning mark on a mask and calculating an adjustment amount for the mark so that the mark can quickly and accurately enter an exposure setting position.
The invention ensures the prealignment precision of the mask by precisely controlling the movement of the mask table, effectively improves the integral precision of the alignment of the mask and the silicon wafer, and further improves the stability and the reliability of the photoetching process. The invention reduces alignment error, improves the production efficiency of the photoetching process, and has wide industrial application prospect.
Specifically, step 1 includes the following steps:
In step S11, the measuring tool for establishing the mask stage R-axis compensation motion model is a specific mask plate with scale values, and in the left and right mask pre-alignment cameras, as shown in (a) and (b) of FIG. 1, a group of measuring scale values are respectively arranged in the left and right mask pre-alignment cameras, wherein the longitudinal scale values are used for measuring the Y-direction variation after the R-axis movement, the transverse scale values are used for measuring the X-direction variation after the R-axis movement, and the marks of the left and right mask pre-alignment cameras are left and right marks.
First, the initial position of the R axis is determined asAnd the left and right masks are prealigned with the marks in the camera, i.e. the Y-direction initial values of the left and right marksAnd (3) withAnd an initial value in X directionAnd (3) withAccording to the step distanceMoving the R axis by i steps, then respectively measuring the coordinates of the left mark after the Y-direction and the X-direction are moved and the coordinates of the right mark after the Y-direction and the X-direction are moved, and then respectively calculating the change amounts of the left mark after the Y-direction and the X-direction according to a formulaAnd (3) withMarker Y-direction and X-direction variation of right cameraAnd (3) with。
The measuring and calculating formula of the Y-direction variation of the R-axis motion of the mask table is that the R-axis position (mm) is as follows: The R axis movement (mm) is: The left mark Y-direction moved coordinates (um) are: the right mark Y-direction moved coordinates (um) are: The left mark Y-direction variation (um) is: the right mark Y-direction variation (um) is: The average cumulative change in Y-direction (um) is: 。
the measuring and calculating formula of the X-direction change quantity of the R-axis motion of the mask table is that the R-axis position (mm) is as follows: The R axis movement (mm) is: the coordinates (um) after the left mark X moves in the direction are: The left mark X-direction variation (um) is: the coordinates (um) after the right mark X moves in the direction are: the right mark X-direction variation (um) is: the average cumulative change in the X direction (um) is: 。
step S12, according to FIG. 2 and equation (1), the R-axis movement can be calculated Angle of mask rotation after distance. Then according toWith corresponding movement of R axisThe motion quantity of the R axis can be obtained by performing inverse function fittingAnd the unitary linear function relation with the rotation angle is shown as a formula (2).
(1)
(2)
Wherein, Is the mask rotation radius; the absolute value of the Y-direction variation is marked on the left, Marking the absolute value of the Y-direction variation quantity for the right side;, is a unitary linear function correlation coefficient.
In step S13, because the mask and the mask stage cannot be completely concentric, errors corresponding to the Y direction and the X direction generated when the R axis moves need to be calculated, and the errors are compensated by the X axis and the Y axis of the mask stage in the mask pre-alignment part.
When calculating the Y-direction error, it is first necessary to obtain the spatial position of the mask according to the measurement situation. For example, during the measurement, when the R axis moves forward, the mask moves clockwise, the left mark moves less than the right mark, indicating that the left is a short axis during rotation, the right is a long axis, the center of motion is left, and when the R axis moves forward, the left mark and the right mark move to the right, so that the rotation center of the mask table is determined to be below the center of the mask, and based on this, a mask motion model as shown in fig. 3 can be established, whereinAnd (3) withRespectively represent the left end point and the right end point of the mask center horizontal line,Representing the midpoint of the horizontal line at the center of the mask,Indicating the center of rotation of the mask stage,Indicating the intersection of the center horizontal lines of the mask before and after rotation,Is thatIs provided with a central point of the (c),And (3) withRespectively represent the change amounts of the left and right marks after rotationThen the Y-direction offset due to mask rotation. Due to errors in measurement, in order to accurately calculate the Y-direction offsetCan not be directly usedBut calculatesIs defined by the length ofThe offset is calculated and the offset is calculated,Is thatRelative toIs provided with a rotation angle of (a),The length of (2) is calculated from the formula (3) in whichAll are mask rotation radii, combine allCorresponding R-axis movement amountAnd (3) performing inverse function fitting to obtain the relation between the Y-direction offset and the R-axis motion, wherein the relation is shown in a formula (4).
(3)
(4)
When calculating X-direction error, since the left and right marks are almost the same in each change, the X-direction average accumulated change can be directly usedWith corresponding movement of R axisAnd performing inverse function fitting to obtain the relation between the X-direction offset and the R-axis motion, as shown in the formula (5).
(5)
Wherein, For the Y-direction error of the mask,As an X-directional error of the mask,,,,And the correlation coefficient is a unitary primary function, thereby forming a mask table compensation motion model.
Further, step S2 includes the steps of:
Step S21, firstly, loading alignment parameters, wherein the parameters comprise set alignment coordinates of left and right marks of the mask And (3) withDistance between left and right marks of maskMask mark space sizeAnd marking the template image by a mask.
Step S22, performing image recognition on marks in the left and right mask pre-alignment cameras, wherein red cross frame coordinates, namely set alignment coordinates of the left and right mask marks, are displayed in a control software interface as shown in (a) and (b) of FIG. 4And (3) withThe mask image recognition algorithm flow is as follows.
1) Firstly, calculating a distribution map of gray values of a mask mark template image, selecting a threshold value to perform binarization operation on the image to obtain a cross mark part, performing smooth noise reduction on a mark region by using open operation, then strengthening image characteristics by using closed operation, and storing the mark part as an alignment template.
2) Detecting the outline of the cross mark in the mask mark template image, storing the result in a boundary point set, and then carrying out minimum external matrix operation on the boundary point set to obtain the pixel side length of the mask alignment markAnd (3) with。
3) When the left mask and the right mask are pre-aligned to the camera detection image, gaussian filtering processing is performed on the detection image to remove background noise, and then a closing operation is used to highlight the characteristics of the region to be detected.
4) Performing matching identification on mask marks in a detection image, and firstly settingTo the point ofAnd carrying out matching search in a detection image by utilizing the graph of the alignment template to obtain a matching score, filtering a matching result according to the minimum matching score and the maximum matching quantity, carrying out overlapping filtering according to the maximum overlapping degree, and sequencing and screening the matching result according to the greedy degree to obtain a final matching result. The pixel center coordinates of the mask alignment mark are finally obtained as the mask alignment mark matching result when the score is highestAndCross template scalingAnd。
Step S23, calculating mask mark space and driving a mask table, firstly, respectively calculating the size ratio of left and right mask prealignment camera pixels to space according to the step (6)AndThen, the difference between the left and right alignment marks of the mask and the set alignment coordinates in the X direction and the Y direction is calculated according to the formula (7)AndWhen presentAt this time, the existence of the mask angle is described, and the angle value is calculated according to the formula (8)Then, the movement amount of the R axis of the mask stage is calculated according to the formulas (2), (4) and (5)The Y-direction and X-direction offsets that followAndThen, the movement amounts of the X axis and the Y axis are calculated according to the formula (9) and the formula (10)And (3) withFinally, the motion quantity can be input and the mask stage can be driven to move into the alignment position.
(6)
(7)
(8)
(9)
(10)
Wherein, formulas (6), (7) omit subscripts Left and Right;、 respectively is Is set for the X-axis and Y-axis offsets,、Respectively isX-axis and Y-axis offsets of (c).
Claims (9)
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