CN118867096B - A light emitting diode structure and preparation method thereof - Google Patents
A light emitting diode structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a light-emitting diode structure and a preparation method thereof, wherein the light-emitting diode structure comprises a plurality of light-emitting units which are arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are arranged in a stacked mode, the second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region further comprises a central region and an edge region, the edge region comprises a first photonic crystal structure, the first photonic crystal structure and the light-emitting layer are arranged in one-to-one correspondence, and/or the plurality of second photonic crystal structures are arranged on one side, far from a substrate, of the light-emitting unit layer, the second photonic crystal structure and the light-emitting units are arranged in one-to-one correspondence, and vertical projection of the second photonic crystal structure on the substrate covers vertical projection of the light-emitting unit on the substrate. The invention can improve the light utilization rate and collimation.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting diode structure and a preparation method thereof.
Background
Light Emitting Diodes (LEDs) have advantages of long service life, low power consumption, high resolution, etc., and are widely used in various fields. Micro LIGHT EMITTING Diode (Micro LED) generally refers to a technology of forming a display array by using LED light emitting units with a size of 1-60 μm, and a Micro LED display panel generally includes a plurality of LED pixels, i.e. light emitting units, and at present, micro LEDs realize pixel isolation by Ion Beam Etching (IBE), but light emitted by each pixel unit is scattered and has a low light utilization rate, and the effect of converging and collimating light is poor.
Disclosure of Invention
The invention provides a light-emitting diode structure and a preparation method thereof, which can improve the light utilization rate and the collimation.
According to an aspect of the present invention, there is provided a light emitting diode structure including:
The light-emitting device comprises a substrate, a light-emitting unit layer and a light-emitting unit layer, wherein the light-emitting unit layer comprises a plurality of light-emitting units which are arranged at intervals;
The second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region is located at one side of the first sub-region away from the substrate, the second sub-region further comprises a central region and an edge region, the edge region surrounds the central region, the edge region comprises a first photonic crystal structure, the first photonic crystal structure and the light emitting layer are arranged in one-to-one correspondence, and/or the plurality of second photonic crystal structures are located at one side of the light emitting unit layer away from the substrate, the second photonic crystal structures and the light emitting units are arranged in one-to-one correspondence, and the vertical projection of the second photonic crystal structure on the substrate covers the vertical projection of the light emitting unit on the substrate.
Optionally, the light emitting diode structure further includes:
the refractive index of the material of the micro lens is larger than that of the material of the second photonic crystal structure;
and the vertical projection of the micro lens on the substrate covers the vertical projection of the second photonic crystal structure on the substrate.
Optionally, the first photonic crystal structure and the second photonic crystal structure comprise a plurality of nano-columns arranged at intervals, wherein the shape of the nano-columns comprises at least one of a cylinder, a round table and a cone;
The arrangement mode of the plurality of nano-pillars comprises one of matrix arrangement, staggered arrangement and triangular arrangement.
Optionally, the distance between adjacent nano-pillars is 200 nm-700 nm;
The height of the nano column is 150nm-1000nm along the direction of the substrate pointing to the light-emitting unit layer;
The angle between the side wall of the nano-pillar and the first surface of the nano-pillar is 60 degrees to 90 degrees, and the first surface of the nano-pillar is the surface of the nano-pillar adjacent to one side of the substrate.
Optionally, the light emitting diode structure further includes:
a transparent conductive layer, a plurality of bonding layers, and a plurality of first insulating layers;
The bonding layers are positioned on one side of the light-emitting unit adjacent to the substrate, and each bonding layer corresponds to one light-emitting unit;
the light-emitting unit comprises a substrate, a first insulating layer, a second semiconductor layer, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, wherein the first insulating layer is positioned at one side of the light-emitting unit far away from the substrate and comprises through holes;
The transparent conductive layer is positioned on one side of the first insulating layer away from the substrate, the transparent conductive layer is contacted with the second semiconductor layer through the through hole, and the transparent conductive layer covers the through hole, the first insulating layer and the substrate which is not covered by the first insulating layer.
Optionally, the light emitting diode structure further includes:
A second insulating layer and a plurality of isolation layers;
The isolation layer is positioned on one side of the transparent conductive layer far away from the substrate, the isolation layer covers part of the transparent conductive layer, and an isolation layer is arranged between adjacent light-emitting units;
The second insulating layer is positioned on one side of the isolating layer away from the substrate, and covers the isolating layers and the transparent conductive layer which is not covered by the isolating layers.
According to another aspect of the present invention, there is provided a method for manufacturing a light emitting diode structure, including:
forming a substrate;
The light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals, wherein each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, and the second semiconductor layer is positioned on one side of the first semiconductor layer away from the substrate;
And the second photonic crystal structures are arranged in one-to-one correspondence with the light emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate.
According to another aspect of the present invention, there is provided a method for manufacturing a light emitting diode structure, including:
forming a substrate;
the light-emitting unit layer comprises a plurality of light-emitting units which are arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, the second semiconductor layer is located on one side, far away from the substrate, of the first semiconductor layer, the second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region is located on one side, far away from the substrate, of the first sub-region, the second sub-region further comprises a central region and an edge region, the edge region surrounds the central region, the edge region comprises a first photonic crystal structure, and the first photonic crystal structure and the light-emitting layer are arranged in a one-to-one correspondence mode.
According to another aspect of the present invention, there is provided a method for manufacturing a light emitting diode structure, including:
forming a substrate;
The light-emitting unit layer comprises a plurality of light-emitting units which are arranged at intervals, wherein each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, the second semiconductor layer is positioned on one side of the first semiconductor layer far away from the substrate, the second semiconductor layer comprises a first sub-zone and a second sub-zone, the second sub-zone is positioned on one side of the first sub-zone far away from the substrate, the second sub-zone also comprises a central zone and an edge zone, the edge zone surrounds the central zone, the edge zone comprises a first photonic crystal structure, and the first photonic crystal structure and the light-emitting layer are arranged in a one-to-one correspondence manner;
And the second photonic crystal structures are arranged in one-to-one correspondence with the light emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate.
Optionally, after forming the plurality of second photonic crystal structures on a side of the light emitting unit layer away from the substrate, the method further includes:
Forming a plurality of microlenses on a side of the second photonic crystal structure away from the substrate, wherein the refractive index of the material of the microlenses is greater than that of the material of the second photonic crystal structure;
and the vertical projection of the micro lens on the substrate covers the vertical projection of the second photonic crystal structure on the substrate.
The light emitting diode structure comprises a light emitting unit layer, wherein the light emitting unit layer is arranged on one side of a substrate, the light emitting unit layer comprises a plurality of light emitting units which are arranged at intervals, each light emitting unit comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are arranged in a stacked mode, the second semiconductor layer is arranged on one side, far away from the substrate, of the first semiconductor layer, the second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region is arranged on one side, far away from the substrate, of the first sub-region, the second sub-region further comprises a central region and an edge region, the edge region surrounds the central region, the edge region comprises a first photonic crystal structure, the first photonic crystal structure and the light emitting layer are arranged in one-to-one correspondence, and/or a plurality of second photonic crystal structures are arranged on one-to-one correspondence, vertical projections of the second photonic crystal structures on the substrate cover vertical projections of the light emitting units on the substrate, and the first photonic crystal structures and the second photonic crystal structures are used for inhibiting light lateral propagation of the light emitting units, so that light emitted by the light emitting units can only propagate along the light emitting direction, and the light emitting surface utilization rate and collimation performance are improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a light emitting diode according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of yet another led according to a first embodiment of the present invention.
Fig. 3 is a schematic structural diagram of yet another led according to a first embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a light emitting unit according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of yet another light emitting unit according to the first embodiment of the present invention.
Fig. 6 is a schematic structural diagram of yet another led according to a first embodiment of the present invention.
Fig. 7 to fig. 9 are schematic structural diagrams of a photonic crystal according to a first embodiment of the present invention.
Fig. 10-12 are schematic views illustrating an arrangement of photonic crystals according to a first embodiment of the present invention.
Fig. 13 is a flowchart of a method for manufacturing a light emitting diode structure according to a second embodiment of the present invention.
Fig. 14 to 20 are schematic views illustrating an intermediate structure of a light emitting diode structure according to a second embodiment of the present invention.
Fig. 21 is a flowchart of a method for manufacturing a light emitting diode structure according to a third embodiment of the present invention.
Fig. 22 is a schematic diagram illustrating an intermediate structure of a light emitting diode structure according to a third embodiment of the present invention.
Fig. 23 is a flowchart of a method for manufacturing a light emitting diode structure according to a fourth embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like herein are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements that are expressly listed or inherent to such process, method, article, or apparatus.
Example 1
An embodiment of the present invention provides a light emitting diode structure, fig. 1 is a schematic structural diagram of a light emitting diode provided in the first embodiment of the present invention, fig. 2 is a schematic structural diagram of yet another light emitting diode provided in the first embodiment of the present invention, fig. 3 is a schematic structural diagram of yet another light emitting diode provided in the first embodiment of the present invention, fig. 4 is a schematic structural diagram of a light emitting unit provided in the first embodiment of the present invention, fig. 5 is a schematic structural diagram of yet another light emitting unit provided in the first embodiment of the present invention, and referring to fig. 1 to 5, the light emitting diode structure includes:
A light emitting unit layer 30, the light emitting unit layer 30 being located at one side of the substrate 10, the light emitting unit layer 30 comprising a plurality of light emitting units 301 arranged at intervals, each light emitting unit 301 comprising a first semiconductor layer 31, a light emitting layer 32 and a second semiconductor layer 33 arranged in a stacked manner, the second semiconductor layer 33 being located at one side of the first semiconductor layer 31 remote from the substrate 10;
The second semiconductor layer 33 includes a first sub-region 331 and a second sub-region 332, the second sub-region 332 is located at a side of the first sub-region 331 away from the substrate 10, the second sub-region 332 further includes a central region 01 and an edge region 02, the edge region 02 surrounds the central region 01, the edge region 02 includes a first photonic crystal structure 81, the first photonic crystal structure 81 and the light emitting layer 32 are disposed in one-to-one correspondence, and/or a plurality of second photonic crystal structures 82, the second photonic crystal structures 82 are located at a side of the light emitting unit layer 30 away from the substrate 10, the second photonic crystal structures 82 and the light emitting units 301 are disposed in one-to-one correspondence, and a perpendicular projection of the second photonic crystal structures 82 on the substrate 10 covers a perpendicular projection of the light emitting units 301 on the substrate 10.
The substrate 10 is a substrate with a driving circuit, the substrate 10 comprises a plurality of driving units, each driving unit is provided with a contact point 11, the contact points 11 of the driving units are arranged in one-to-one correspondence with the light emitting units 301, the light emitting units 301 are arranged right above the contact points 11, and each light emitting unit 301 can be independently controlled. Each light emitting unit 301 includes a first semiconductor layer 31, a light emitting layer 32 and a second semiconductor layer 33 that are stacked, where the materials of the first semiconductor layer 31, the light emitting layer 32 and the second semiconductor layer 33 are all III-V compound materials commonly used in the semiconductor industry, the first semiconductor layer 31 may be an N-type semiconductor layer or a P-type semiconductor layer, if the first semiconductor layer 31 is an N-type semiconductor layer, the second semiconductor layer 33 is a P-type semiconductor layer, and if the first semiconductor layer 31 is a P-type semiconductor layer, the second semiconductor layer 33 is an N-type semiconductor layer, and the light emitting unit 301 may be any one of a red light emitting unit, a green light emitting unit or a blue light emitting unit, which may be set according to requirements.
Specifically, the edge region 02 of the second sub-region 332 of the second semiconductor layer 33 includes a first photonic crystal structure 81, the second photonic crystal structure 82 is located at one side of the light emitting unit layer 30 away from the substrate 10, the materials of the second photonic crystal structure 82 and the first photonic crystal structure 81 may be the same or different, the vertical projection of the second photonic crystal structure 82 on the substrate 10 covers the vertical projection of the light emitting unit 301 on the substrate 10, by setting the first photonic crystal structure 81 and the second photonic crystal structure 82 of different refractive index materials, the propagation path and speed of light can be controlled, the photonic band gap is realized, the light with specific resistance frequency passes through, the first photonic crystal structure 81 and the light emitting layer 32 are set in one-to-one correspondence, the second photonic crystal structure 82 and the light emitting unit 301 are set in one-to-one correspondence, so that the light emitted by the light emitting unit 301 can propagate only along the direction of the light emitting surface, which is the surface of the light emitting unit layer 30 away from the substrate 10, the light side propagation of the light emitting unit 301 can be effectively suppressed, and the light utilization and collimation can be improved.
The light emitting diode structure provided by the technical scheme of the embodiment of the invention comprises a light emitting unit layer 30, wherein the light emitting unit layer 30 is positioned on one side of a substrate 10, the light emitting unit layer 30 comprises a plurality of light emitting units 301 which are arranged at intervals, each light emitting unit 301 comprises a first semiconductor layer 31, a light emitting layer 32 and a second semiconductor layer which are arranged in a stacked mode, the second semiconductor layer 33 is positioned on one side of the first semiconductor layer 31 which is far away from the substrate 10, the second semiconductor layer 33 comprises a first sub-region 331 and a second sub-region 332, the second sub-region 332 is positioned on one side of the first sub-region 331 which is far away from the substrate 10, the second sub-region 332 also comprises a central region 01 and an edge region 02, the edge region 02 surrounds the central region 01, the edge region 02 comprises a first photonic crystal structure 81, the first photonic crystal structure 81 and the light emitting layer 32 are arranged in a one-to-one correspondence mode, and/or the second photonic crystal structure 82 is positioned on one side of the light emitting unit layer 30 which is far away from the substrate 10, the second photonic crystal structure 82 and the light emitting unit 301 are arranged in one-to-one correspondence mode, the second photonic crystal structure 82 vertically projects the second photonic crystal structure 82 on the substrate 10 to cover the light emitting unit 301, and the second photonic crystal structure 82 vertically projects on the substrate 10 to the side of the first photonic crystal structure and the second photonic structure can be used for inhibiting light emitting light emission of the light and the light from the first photonic crystal structure and the light emitting unit.
Optionally, referring to fig. 1-3, the light emitting diode structure further includes a plurality of microlenses 90, the microlenses 90 being located on a side of the second photonic crystal structure 82 remote from the substrate 10, the material of the microlenses 90 having a refractive index greater than that of the material of the second photonic crystal structure 82, each light emitting unit 301 corresponding to at least one microlens 90, and a vertical projection of the microlenses 90 onto the substrate 10 covering a vertical projection of the second photonic crystal structure 82 onto the substrate 10.
The shape of the micro lens 90 may be hemispherical or truncated cone, each light emitting unit 301 corresponds to at least one micro lens 90, and exemplary fig. 1 to 3 are all schematic diagrams of a structure of one light emitting unit 301 corresponding to one micro lens 90, or fig. 6 is a schematic diagram of another led according to an embodiment of the present invention, referring to fig. 6, a plurality of micro lenses 91 with small dimensions are further disposed on a curved surface of the micro lens 90 far from the substrate 10, any dimensions of the micro lenses 91 are smaller than those of the micro lenses 90, fig. 6 is only an example, and a plurality of micro lenses 91 with small dimensions may be disposed on the basis of fig. 1 to 3, so as to improve light utilization and collimation of the led. In some embodiments, the microlenses 90 composed of an inorganic or organic material are patterned through a mask, lithographically etched, and then formed by etching. In some embodiments, the microlenses 90 composed of an organic material are formed by patterning with a mask, photolithography, and then thermal reflow process, etching at high temperature.
Specifically, the second photonic crystal structure 82 includes a plurality of nano columns arranged at intervals, the adjacent nano columns are filled with the micro lenses 90, the refractive index of the material of the micro lenses 90 is larger than that of the material of the second photonic crystal structure 82, which is favorable for light collimation and improves light output at a small angle, the material of the second photonic crystal structure 82 and the material of the micro lenses are alternately arranged, so that the light utilization rate of the second photonic crystal structure 82 is higher, the collimation is better, the micro lenses 90 are arranged in one-to-one correspondence with the second photonic crystal structure 82, the surfaces of the micro lenses 90 far away from the substrate 10 are curved surfaces, light can be further converged and/or collimated, the micro lenses 90 serve as an important optical element, and the arrangement of the micro lenses 90 can reduce scattering, internal reflection, absorption and the like, and can effectively improve the light utilization rate and collimation of the light emitting diode. Each light emitting unit 301 includes one or more groups of photonic crystal structures and one or more microlenses 90, which can improve the light emitting efficiency of the light emitting unit 301 and improve the light utilization and collimation.
Alternatively, fig. 7 to fig. 9 are schematic structural diagrams of a photonic crystal according to the first embodiment of the present invention, and referring to fig. 3 and fig. 7 to fig. 9, the first photonic crystal structure 81 and the second photonic crystal structure 82 include a plurality of nano-pillars 03 disposed at intervals, the shape of the nano-pillars 03 includes at least one of a cylinder, a round table and a cone, and the arrangement of the photonic crystal according to the first embodiment of the present invention, and referring to fig. 10 to fig. 12, the arrangement of the plurality of nano-pillars 03 includes one of a matrix arrangement, a staggered arrangement and a triangular arrangement.
The shape of the nano-pillars 03 in fig. 7 is a cylinder, the shape of the round table of the nano-pillars 03 in fig. 8 is a cone of the shape of the nano-pillars 03 in fig. 9, the different shapes of the nano-pillars 03 can affect the photonic band gap and the optical characteristics of the photonic crystal structure, the nano-pillars 03 can be specifically set according to requirements, the shape of the nano-pillars 03 can also be a sphere or a prism, the arrangement mode of the plurality of nano-pillars 03 in fig. 10 is a matrix arrangement, the arrangement mode of the plurality of nano-pillars 03 in fig. 11 is a staggered arrangement, the arrangement mode of the plurality of nano-pillars 03 in fig. 12 is a triangular arrangement, the matrix arrangement, the staggered arrangement and the triangular arrangement are all regular arrangements, and the regular arrangement can form an obvious photonic band gap, thereby improving the light utilization rate.
Alternatively, referring to fig. 7 to 9, the distance a between adjacent nano-pillars 03 is 200nm to 700nm, the height B of the nano-pillars is 150nm to 1000nm along the direction of the substrate toward the light emitting unit layer, the angle C between the sidewall of the nano-pillars 03 and the first surface of the nano-pillars 03 is 60 ° to 90 °, and the first surface of the nano-pillars 03 is the surface of the nano-pillars 03 adjacent to the side of the substrate 10.
The distance A between adjacent nano columns 03 is 200 nm-700 nm, the height B of the nano columns is 150nm-1000nm, and the angle C between the side wall of the nano column 03 and the first surface of the nano column 03 is 60 degrees to 90 degrees, so that the light utilization rate and the collimation can be improved.
Alternatively, referring to fig. 1 to 5, the light emitting diode structure further includes a transparent conductive layer 50, a plurality of bonding layers 20, and a plurality of first insulating layers 40, the bonding layers 20 are positioned at one side of the light emitting unit 301 adjacent to the substrate 10, each bonding layer 20 corresponds to one light emitting unit 301, and the light emitting unit 301 covers a portion of the bonding layers 20.
The first insulating layers 40 are located at a side of the light emitting unit 301 remote from the substrate 10, the first insulating layers 40 include through holes 41, each of the first insulating layers 40 covers a sidewall of the light emitting unit 301, a sidewall of the bonding layer 20, and the bonding layer 20 not covered by the light emitting unit 301, when the second semiconductor layer 33 includes the first photonic crystal structure 81, the through holes 41 penetrate from a surface of the first insulating layer 40 remote from the substrate 10 to a central region 01 of the second sub-region 332, and when the second semiconductor layer 33 does not include the first photonic crystal structure 81, the through holes 41 penetrate from a surface of the first insulating layer 40 remote from the substrate 10 to the second semiconductor layer 33.
The transparent conductive layer 50 is located at a side of the first insulating layer 40 away from the substrate 10, the transparent conductive layer 50 is in contact with the second semiconductor layer 33 through the via hole 41, and the transparent conductive layer 50 covers the via hole 41, the first insulating layer 40, and the substrate 10 not covered by the first insulating layer 40.
The bonding layer 20 may be a metal bonding layer, the metal bonding layer may include a first adhesion layer, a bonding metal, a barrier layer, a second adhesion layer and an ohmic contact layer, which are stacked, the first adhesion layer may increase adhesion with the substrate 10, the second adhesion layer may increase adhesion between the ohmic contact layer and the barrier layer, and when the bonding metal is bonded with the substrate 10, the barrier layer may block diffusion of metal ions into the ohmic contact layer, which affects device performance, and the metal bonding material may include gold (Au-Au) bonding, copper-copper (Cu-Cu) bonding, gold-tin (Au-Sn) bonding, or gold-indium (Au-In) bonding.
The first insulating layer 40 is used to protect all of the light emitting cells 301, the first insulating layer is a transparent insulating passivation layer, and the material of the first insulating layer 40 comprises a transparent inorganic or plastic (organic) material, and in some embodiments, the inorganic material comprises silicon oxide, titanium oxide, silicon nitride, silicon carbide, aluminum oxide, phosphosilicate glass (PSG), or any combination thereof. In some embodiments, the plastic material comprises a polymer such as SU-8, benzocyclobutene (BCB), or a transparent plastic (resin) including spin-on glass (SOG), or any combination of the above. If the second semiconductor layer 33 includes the first photonic crystal structure 81, the material of the first photonic crystal structure 81 and the material of the first insulating layer 40 are alternately arranged, so that the light utilization rate of the first photonic crystal structure 81 is higher and the collimation is better.
The transparent conductive layer 50 is used to electrically connect the second semiconductor layers 33 of all the light emitting cells 301 so that the second semiconductor layers 33 have the same electrical signal, and the material of the transparent conductive layer 50 may be an ITO material.
Optionally, referring to fig. 1-3, the light emitting diode structure further includes a second insulating layer 70 and a plurality of insulating layers 60, wherein the insulating layers 60 are located at a side of the transparent conductive layer 50 away from the substrate 10, the insulating layers 60 cover a portion of the transparent conductive layer 50, one insulating layer 60 is disposed between adjacent light emitting units 301, the second insulating layer 70 is located at a side of the insulating layers 60 away from the substrate 10, and the second insulating layer 70 covers the plurality of insulating layers 60 and the transparent conductive layer 50 not covered by the insulating layers 60.
The isolation layer 60 is a metal strip, and the isolation layer 60 can be used for current spreading and pixel isolation segmentation. The material of the second insulating layer 70 is the same as that of the second photonic crystal structure 82, and since the light emitting units 301 are arranged in a rectangular array, the thickness of the second insulating layer 70 needs to be set thicker, and the second insulating layer 70 needs to be planarized for improving the performance of the device. The material of the second insulating layer 70 includes a transparent inorganic or plastic (organic) material for use as a passivation layer and planarization material for the light-emitting unit, and in some embodiments, the inorganic material includes silicon oxide, titanium oxide, silicon nitride, silicon carbide, aluminum oxide, phosphosilicate glass (PSG), or any combination thereof. In some embodiments, the plastic material comprises a polymer such as SU-8, benzocyclobutene (BCB), or a transparent plastic (resin) including spin-on glass (SOG), or any combination of the above. The second photonic crystal structure 82 is formed by using electron beam Exposure (EBL) and plasma etching (ICP) etching, and is the same material as the second insulating layer 70.
Example two
The embodiment of the present invention provides a method for manufacturing a light emitting diode structure based on the above embodiment, and fig. 13 is a flowchart of a method for manufacturing a light emitting diode structure provided in the second embodiment of the present invention, and referring to fig. 13, the method for manufacturing a light emitting diode structure includes:
s110, forming a substrate.
The substrate comprises a plurality of driving units, each driving unit is provided with a contact point, the contact points of the driving units are arranged in one-to-one correspondence with the light emitting units, and each light emitting unit can be independently controlled.
And S120, forming a light-emitting unit layer on one side of the substrate, wherein the light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, and the second semiconductor layer is positioned on one side of the first semiconductor layer away from the substrate.
The light-emitting unit layer is formed first, the substrate and the light-emitting unit layer can be bonded together through a bonding process, and then the redundant materials and the materials of bonding metal are removed through a micro-nano processing mode, mainly a photoetching, etching and depositing mode, so that the final structure of the light-emitting unit layer is formed.
And S130, forming a plurality of second photonic crystal structures on one side of the light emitting unit layer away from the substrate, wherein the second photonic crystal structures are arranged in one-to-one correspondence with the light emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate.
Wherein a plurality of second photonic crystal structures are formed on a side of the light emitting unit layer remote from the substrate by using electron beam Exposure (EBL) and plasma etching (ICP) etching.
The following is a specific flow of a method for manufacturing a light emitting diode structure according to an embodiment of the present invention, and fig. 14 to fig. 20 are schematic diagrams of an intermediate structure of a light emitting diode structure according to a second embodiment of the present invention, including:
s210, forming a substrate.
Referring to fig. 15, the substrate includes a plurality of driving units, each driving unit is provided with a contact point 11, the contact points 11 of the driving units are arranged in a one-to-one correspondence with the light emitting units, and each light emitting unit can be independently controlled.
S220, forming an entire light-emitting unit layer.
S230, bonding the whole light-emitting unit layer and the substrate through the whole bonding layer.
Referring to fig. 14, the entire bonding layer 20 covers the substrate 10, and the entire light emitting unit layer 30 covers the entire bonding layer 20.
S240, etching the whole light-emitting unit layer and the whole bonding layer to form a light-emitting unit layer and a plurality of bonding layers, wherein the light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are arranged in a stacked mode, and the second semiconductor layer is located on one side, far away from the substrate, of the first semiconductor layer.
Referring to fig. 15, the light emitting unit layer is patterned and etched to form a plurality of light emitting units 301, and a plurality of bonding layers 20 are formed by photolithography and etching, wherein the size of each light emitting unit 301 is smaller than the size of each bonding layer 20 along the direction parallel to the substrate 10, and when etching the whole bonding layer 20, the photoresist in the photolithography and etching can protect each light emitting unit 301, so as to prevent the bonding layer 20 from metal ions from carrying out the light emitting units 301 during etching, thereby causing device short circuit, or damaging the side wall of the light emitting unit 301 during etching the bonding layer 20.
The bonding layer 20 may be a metal bonding layer, the metal bonding layer may include a first adhesion layer, a bonding metal, a barrier layer, a second adhesion layer and an ohmic contact layer, which are stacked, the first adhesion layer may increase adhesion with the substrate 10, the second adhesion layer may increase adhesion between the ohmic contact layer and the barrier layer, and when the bonding metal is bonded with the substrate 10, the barrier layer may block diffusion of metal ions into the ohmic contact layer, which affects device performance, and the metal bonding material may include gold (Au-Au) bonding, copper-copper (Cu-Cu) bonding, gold-tin (Au-Sn) bonding, or gold-indium (Au-In) bonding.
S250, forming a plurality of first insulating layers on one side of the light emitting unit far away from the substrate, wherein the first insulating layers comprise through holes, each first insulating layer covers the side wall of the light emitting unit, the side wall of the bonding layer and the bonding layer which is not covered by the light emitting unit, and the through holes penetrate through the surface of the first insulating layer far away from the substrate to the second semiconductor layer.
In this case, referring to fig. 16, an entire first insulating layer 40 is deposited first, and a plurality of first insulating layers 40 having via holes 41 are formed by photolithography.
And S260, forming a transparent conductive layer on one side of the first insulating layer away from the substrate, wherein the transparent conductive layer is contacted with the second semiconductor layer through the through hole, and the transparent conductive layer covers the through hole, the first insulating layer and the substrate which is not covered by the first insulating layer.
S270, forming a plurality of isolation layers on one side of the transparent conductive layer source electrode substrate, wherein the isolation layers cover part of the transparent conductive layer, and an isolation layer is arranged between adjacent light emitting units.
S280, forming a second insulating layer on one side of the isolation layer away from the substrate, wherein the second insulating layer covers the isolation layers and the transparent conductive layer which is not covered by the isolation layers.
And S290, forming a plurality of second photonic crystal structures on one side of the second insulating layer far away from the substrate, wherein the second photonic crystal structures and the light emitting units are arranged in one-to-one correspondence, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate.
In which, referring to fig. 17, a second photonic crystal structure 82 is formed by etching a surface of the second insulating layer 70 away from the substrate 10 using electron beam Exposure (EBL) and plasma etching (ICP).
S300, referring to fig. 18, a photoresist 91 is formed on a side of the second photonic crystal structure 82 away from the substrate 10.
S310, referring to fig. 19, a mask pattern 92 is formed on a side of the photoresist 91 away from the substrate 10.
Wherein the mask pattern 92 may be formed by mask patterning.
S320, referring to fig. 19 and 20, a thermal reflow process is performed on the mask pattern 92 to form a curved mask pattern 92.
Referring to fig. 20, the thermal reflow process is performed at a high temperature, i.e., a temperature at which the mask pattern is melted into a curved surface.
S330, referring to fig. 2, the photoresist 91 is etched through the curved mask pattern to form a plurality of microlenses 90. The refractive index of the material of the micro-lens 90 is larger than the refractive index of the material of the second photonic crystal structure 82, each light emitting unit 301 corresponds to at least one micro-lens 90, and the perpendicular projection of the micro-lens 90 onto the substrate 10 covers the perpendicular projection of the second photonic crystal structure 82 onto the substrate 10.
The number of the micro lenses on the single light-emitting unit is one or more, and the micro lenses are generally hemispherical or truncated cone-shaped. In some embodiments, microlenses composed of inorganic or organic materials are patterned through a mask, lithographically, and then etched. In some embodiments, microlenses composed of an organic material are formed by patterning with a mask, photolithography, and then thermal reflow process, etching at high temperature.
According to the preparation method of the light-emitting diode structure, the second photonic crystal structure is used for inhibiting lateral propagation of light emitted by the light-emitting unit, so that the light emitted by the light-emitting unit can be propagated only along the direction of the light-emitting surface, and the light utilization rate and collimation are improved.
Example III
The third embodiment of the present invention is different from the second embodiment in that a second photonic crystal structure is not required to be formed, and a first photonic crystal structure is formed on a surface of the second semiconductor layer away from the substrate.
Fig. 21 is a flowchart of a method for manufacturing a light emitting diode structure according to a third embodiment of the present invention, and referring to fig. 21, the method includes:
S410, forming a substrate.
Wherein, S410 is the same as S110, and has the same beneficial effects.
S420, forming a light-emitting unit layer on one side of a substrate, wherein the light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, the second semiconductor layer is located on one side, far away from the substrate, of the first semiconductor layer, the second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region is located on one side, far away from the substrate, of the first sub-region, the second sub-region further comprises a central region and an edge region, the edge region surrounds the central region, the edge region comprises a first photonic crystal structure, and the first photonic crystal structure and the light-emitting layer are arranged in one-to-one correspondence.
The light-emitting unit layer is formed first, the substrate and the light-emitting unit layer can be bonded together through a bonding process, and then the redundant materials and the materials of bonding metal are removed through a micro-nano processing mode, mainly a photoetching, etching and depositing mode, so that the final structure of the light-emitting unit layer is formed.
The following is a specific flow of a method for manufacturing a light emitting diode structure according to the technical solution of the embodiment of the present invention, and fig. 22 is a schematic diagram of an intermediate structure of a light emitting diode structure according to the third embodiment of the present invention, where the manufacturing method includes:
S510, forming a substrate.
S520, forming a whole light-emitting unit layer.
S530, bonding the whole light-emitting unit layer and the substrate through the whole bonding layer;
S540, etching a whole light-emitting unit layer and a whole bonding layer to form a light-emitting unit layer and a plurality of bonding layers, wherein the light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are arranged in a stacked mode, the second semiconductor layer is located on one side, far away from a substrate, of the first semiconductor layer, the second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region is located on one side, far away from the substrate, of the first sub-region, the second sub-region further comprises a central region and an edge region, and the edge region surrounds the central region.
Wherein, S510-S540 have the same beneficial effects as S210-S240.
S550, etching the edge area of the second sub-area of the second semiconductor layer to form a first photonic crystal structure, wherein the first photonic crystal structure and the light emitting layer are arranged in one-to-one correspondence.
Referring to fig. 22, the surface of the second sub-region of the edge region away from the substrate is etched to form a first photonic crystal structure, and finally, a light emitting unit 301 having the first photonic crystal structure is formed.
S560, forming a plurality of first insulating layers on one side of the light emitting unit far from the substrate, wherein the first insulating layers comprise through holes, each first insulating layer covers the side wall of the light emitting unit, the side wall of the bonding layer and the bonding layer which is not covered by the light emitting unit, and the through holes penetrate through the surface of the first insulating layer far from the substrate to the central area of the second sub-zone.
The width of the through holes in the central area is consistent, and the conductivity of the subsequent transparent conductive layer is improved. An entire first insulating layer may be deposited first, and a plurality of first insulating layers having via holes may be formed by photolithography.
S570, forming a transparent conductive layer on one side of the first insulating layer away from the substrate, wherein the transparent conductive layer is in contact with the second semiconductor layer through the through hole, and the transparent conductive layer covers the through hole, the first insulating layer and the substrate which is not covered by the first insulating layer.
S570, forming a plurality of isolation layers on one side of the transparent conductive layer source electrode substrate, wherein the isolation layers cover part of the transparent conductive layer, and one isolation layer is arranged between adjacent light emitting units.
And S590, forming a second insulating layer on one side of the isolation layer away from the substrate, wherein the second insulating layer covers the isolation layers and the transparent conductive layer which is not covered by the isolation layers.
And S600, forming photoresist on the side, away from the substrate, of the second insulating layer.
And S610, forming a mask pattern on one side of the photoresist, which is far away from the substrate.
S620, performing a thermal reflow process on the mask pattern to form a curved mask pattern.
And S630, etching the photoresist through the curved mask pattern to form a plurality of microlenses.
Wherein, S570-S590 are the same as S260-S280, and S600-S630 are the same as S300-S330, with the same beneficial effects.
Example IV
The fourth embodiment of the present invention is different from the third and second embodiments in that the embodiment of the present invention forms both the second photonic crystal structure and the first photonic crystal structure.
An embodiment of the present invention provides a method for manufacturing a light emitting diode structure based on the above embodiment, and fig. 23 is a flowchart of a method for manufacturing a light emitting diode structure according to a fourth embodiment of the present invention, and referring to fig. 23, the method for manufacturing a light emitting diode structure includes:
S710, forming a substrate;
s720, forming a light-emitting unit layer on one side of the substrate, wherein the light-emitting unit layer comprises a plurality of light-emitting units which are arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, the second semiconductor layer is positioned on one side of the first semiconductor layer far away from the substrate, the second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region is positioned on one side of the first sub-region far away from the substrate, the second sub-region also comprises a central region and an edge region, the edge region surrounds the central region, the edge region comprises a first photonic crystal structure, and the first photonic crystal structure and the light-emitting layer are arranged in a one-to-one correspondence;
And S730, forming a plurality of second photonic crystal structures on one side of the light emitting unit layer away from the substrate, wherein the second photonic crystal structures are arranged in one-to-one correspondence with the light emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate.
The following is a specific flow of a preparation method of a light emitting diode structure according to the technical scheme of the embodiment of the invention, and the preparation method comprises the following steps:
S810, forming a substrate.
S820, forming a whole light-emitting unit layer.
S830, bonding the whole light-emitting unit layer and the substrate through the whole bonding layer;
And S840, etching the whole light-emitting unit layer and the whole bonding layer to form a light-emitting unit layer and a plurality of bonding layers, wherein the light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals, each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are arranged in a stacked mode, the second semiconductor layer is positioned on one side, far away from the substrate, of the first semiconductor layer, the second semiconductor layer comprises a first sub-zone and a second sub-zone, the second sub-zone is positioned on one side, far away from the substrate, of the first sub-zone, the second sub-zone further comprises a central zone and an edge zone, and the edge zone surrounds the central zone.
S850, etching the edge area of the second sub-area of the second semiconductor layer to form a first photonic crystal structure, wherein the first photonic crystal structure and the light emitting layer are arranged in one-to-one correspondence.
S860, forming a plurality of first insulating layers on one side of the light emitting unit far from the substrate, wherein the first insulating layers comprise through holes, each first insulating layer covers the side wall of the light emitting unit, the side wall of the bonding layer and the bonding layer which is not covered by the light emitting unit, and the through holes penetrate through the surface of the first insulating layer far from the substrate to the central area of the second sub-zone.
And S870, forming a transparent conductive layer on one side of the first insulating layer away from the substrate, wherein the transparent conductive layer is contacted with the second semiconductor layer through the through hole, and the transparent conductive layer covers the through hole, the first insulating layer and the substrate which is not covered by the first insulating layer.
S580, forming a plurality of isolation layers on one side of the transparent conductive layer source electrode substrate, wherein the isolation layers cover part of the transparent conductive layer, and an isolation layer is arranged between adjacent light-emitting units.
And S890, forming a second insulating layer on one side of the isolation layer away from the substrate, wherein the second insulating layer covers the isolation layers and the transparent conductive layer which is not covered by the isolation layers.
The S810-S890 are the same as the S510-S590, and have the same beneficial effects.
And S900, forming a plurality of second photonic crystal structures on one side of the second insulating layer, which is far away from the substrate, wherein the second photonic crystal structures are arranged in one-to-one correspondence with the light emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate.
And S910, forming photoresist on one side of the second photonic crystal structure away from the substrate.
S920, forming a mask pattern on one side of the photoresist away from the substrate.
S930, performing a thermal reflow process on the mask pattern to form a curved mask pattern.
S940, etching the photoresist through the curved mask pattern to form a plurality of microlenses.
Wherein, S900-S940 are the same as S290-S330, and have the same beneficial effects.
The preparation method of the light-emitting diode structure provided by any embodiment of the invention has the same beneficial effects as the light-emitting diode structure provided by any embodiment of the invention.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (9)
1. A light emitting diode structure, comprising:
The light-emitting device comprises a substrate, a light-emitting unit layer and a light-emitting unit layer, wherein the light-emitting unit layer comprises a plurality of light-emitting units which are arranged at intervals;
The second photonic crystal structures are positioned on one side of the light-emitting unit layer, which is far away from the substrate, and the second photonic crystal structures are arranged in one-to-one correspondence with the light-emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light-emitting units on the substrate;
The light emitting diode structure further comprises a plurality of micro lenses, wherein the micro lenses are positioned on one side, away from the substrate, of the second photonic crystal structure, the refractive index of materials of the micro lenses is larger than that of materials of the second photonic crystal structure, and the materials of the second photonic crystal structure and the materials of the micro lenses are alternately arranged.
2. The light emitting diode structure of claim 1, wherein the second semiconductor layer comprises a first sub-region and a second sub-region, the second sub-region being located on a side of the first sub-region away from the substrate, the second sub-region further comprising a center region and an edge region, the edge region surrounding the center region, the edge region comprising a first photonic crystal structure, the first photonic crystal structure and the light emitting layer being disposed in a one-to-one correspondence.
3. The structure of claim 1, wherein,
And the vertical projection of the micro lens on the substrate covers the vertical projection of the second photonic crystal structure on the substrate.
4. The structure of claim 2, wherein,
The first photonic crystal structure and the second photonic crystal structure comprise a plurality of nano columns which are arranged at intervals, and the shape of each nano column comprises at least one of a cylinder, a round table and a cone;
the arrangement mode of the plurality of nano-pillars comprises one of matrix arrangement, staggered arrangement and triangular arrangement.
5. The structure of claim 4, wherein,
The distance between adjacent nano-pillars is 200 nm-700 nm;
the height of the nano-pillars is 150nm-1000nm along the direction of the substrate pointing to the light-emitting unit layer;
The angle between the side wall of the nano-pillar and the first surface of the nano-pillar is 60-90 degrees, and the first surface of the nano-pillar is the surface of the nano-pillar adjacent to one side of the substrate.
6. The light emitting diode structure of claim 2, further comprising:
a transparent conductive layer, a plurality of bonding layers, and a plurality of first insulating layers;
The bonding layers are positioned on one side of the light-emitting units adjacent to the substrate, and each bonding layer corresponds to one light-emitting unit;
The first insulating layers are positioned on one side of the light emitting unit far away from the substrate and comprise through holes, each first insulating layer covers the side wall of the light emitting unit, the side wall of the bonding layer and the bonding layer which is not covered by the light emitting unit, when the second semiconductor layer comprises a first photonic crystal structure, the through holes penetrate from the surface of the first insulating layer far away from the substrate to the central area of the second sub-region, and when the second semiconductor layer does not comprise the first photonic crystal structure, the through holes penetrate from the surface of the first insulating layer far away from the substrate to the second semiconductor layer;
The transparent conductive layer is positioned on one side of the first insulating layer away from the substrate, the transparent conductive layer is in contact with the second semiconductor layer through the through hole, and the transparent conductive layer covers the through hole, the first insulating layer and the substrate which is not covered by the first insulating layer.
7. The light emitting diode structure of claim 6, further comprising:
A second insulating layer and a plurality of isolation layers;
the isolation layer is positioned on one side of the transparent conductive layer far away from the substrate, the isolation layer covers part of the transparent conductive layer, and one isolation layer is arranged between the adjacent light-emitting units;
The second insulating layer is positioned on one side of the isolating layer far away from the substrate, and covers the isolating layers and the transparent conductive layer which is not covered by the isolating layers.
8. A method for fabricating a light emitting diode structure, comprising:
forming a substrate;
The light-emitting device comprises a substrate, a light-emitting unit layer and a light-emitting unit layer, wherein the light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals;
Forming a plurality of second photonic crystal structures on one side of the light emitting unit layer far away from the substrate, wherein the second photonic crystal structures are arranged in one-to-one correspondence with the light emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate;
after forming a plurality of second photonic crystal structures on a side of the light emitting unit layer away from the substrate, the method further includes:
the refractive index of the material of the micro lens is larger than that of the material of the second photonic crystal structure, and the material of the second photonic crystal structure and the material of the micro lens are alternately arranged.
9. A method for fabricating a light emitting diode structure, comprising:
forming a substrate;
Forming a light emitting unit layer on one side of the substrate; the light-emitting unit layer comprises a plurality of light-emitting units arranged at intervals, wherein each light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked, the second semiconductor layer is positioned on one side of the first semiconductor layer far away from the substrate, the second semiconductor layer comprises a first sub-zone and a second sub-zone, the second sub-zone is positioned on one side of the first sub-zone far away from the substrate, the second sub-zone also comprises a central zone and an edge zone, the edge zone surrounds the central zone, and the edge zone comprises a first photonic crystal structure, and the first photonic crystal structure and the light-emitting layer are arranged in a one-to-one correspondence manner;
Forming a plurality of second photonic crystal structures on one side of the light emitting unit layer far away from the substrate, wherein the second photonic crystal structures are arranged in one-to-one correspondence with the light emitting units, and the vertical projection of the second photonic crystal structures on the substrate covers the vertical projection of the light emitting units on the substrate;
after forming a plurality of second photonic crystal structures on a side of the light emitting unit layer away from the substrate, the method further includes:
forming a plurality of microlenses on one side of the second photonic crystal structure far away from the substrate, wherein the refractive index of the material of the microlenses is larger than that of the material of the second photonic crystal structure;
Each light-emitting unit corresponds to at least one micro lens, the vertical projection of the micro lens on the substrate covers the vertical projection of the second photonic crystal structure on the substrate, and the materials of the second photonic crystal structure and the materials of the micro lenses are alternately arranged.
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| CN102169948A (en) * | 2010-02-08 | 2011-08-31 | Lg伊诺特有限公司 | Light emitting apparatus and lighting system |
| TW202349064A (en) * | 2022-02-25 | 2023-12-16 | 美商元平台技術有限公司 | Multilayer flat lens for ultra-high resolution phase delay and wavefront reshaping |
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| CN102386200B (en) * | 2010-08-27 | 2014-12-31 | 财团法人工业技术研究院 | Light emitting unit array and projection system |
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| CN117316937A (en) * | 2022-06-21 | 2023-12-29 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | A display substrate for a reflective layer type retaining wall and its preparation method and application |
| CN115332423A (en) * | 2022-08-19 | 2022-11-11 | 天津三安光电有限公司 | Light emitting diode and method for manufacturing the same |
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| CN102169948A (en) * | 2010-02-08 | 2011-08-31 | Lg伊诺特有限公司 | Light emitting apparatus and lighting system |
| TW202349064A (en) * | 2022-02-25 | 2023-12-16 | 美商元平台技術有限公司 | Multilayer flat lens for ultra-high resolution phase delay and wavefront reshaping |
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