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CN118553621A - Method for manufacturing package substrate - Google Patents

Method for manufacturing package substrate Download PDF

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Publication number
CN118553621A
CN118553621A CN202310250500.XA CN202310250500A CN118553621A CN 118553621 A CN118553621 A CN 118553621A CN 202310250500 A CN202310250500 A CN 202310250500A CN 118553621 A CN118553621 A CN 118553621A
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Prior art keywords
layer
circuit
circuit structure
insulating layer
carrier
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Granted
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CN202310250500.XA
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Chinese (zh)
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CN118553621B (en
Inventor
陈敏尧
张垂弘
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Xinai Technology Nanjing Co ltd
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Xinai Technology Nanjing Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The invention discloses a method for manufacturing a packaging substrate, which comprises the steps of firstly manufacturing an asymmetric substrate structure on two opposite surfaces of a bearing piece at the same time, and after the bearing piece is removed, manufacturing circuit layers on two opposite sides of the asymmetric substrate structure at the same time.

Description

封装基板的制法Method for manufacturing packaging substrate

技术领域Technical Field

本发明有关一种基板制法,尤指一种不对称封装基板的制法。The present invention relates to a method for manufacturing a substrate, and in particular to a method for manufacturing an asymmetric packaging substrate.

背景技术Background Art

随着产业应用的发展,近年来逐渐朝向5G高频通讯、扩增实境(AugmentedReality,简称AR)、虚拟实境(virtual reality,缩写VR)等发展,因此更需要研发高阶半导体的封装技术,以应用于如人工智能芯片(AI Chip)、高阶芯片、多芯片等的半导体覆晶封装或多芯片封装,而在此封装需求之下,封装尺寸势必越来越大,叠层数也越来越高,导致线路设计更是朝高密度、细线路间距、高电性连接点数等方向设计,借以满足上揭芯片的封装需求。With the development of industrial applications, in recent years, it has gradually developed towards 5G high-frequency communications, augmented reality (AR), virtual reality (VR), etc. Therefore, it is more necessary to develop high-end semiconductor packaging technology to be applied to semiconductor flip-chip packaging or multi-chip packaging such as artificial intelligence chips (AI chips), high-end chips, and multi-chips. Under this packaging requirement, the package size is bound to become larger and larger, and the number of stacking layers is also getting higher and higher, resulting in the circuit design being designed towards high density, fine line spacing, and high electrical connection points to meet the packaging requirements of the above-mentioned chips.

图1为现有封装基板1的剖视图。如图1所示,该封装基板1包括一核心板体10,其具有相对的第一侧10a及第二侧10b,且于该核心板体10的第一侧10a形成有第一线路结构11,而于该核心板体10的第二侧10b形成有第二线路结构12,其中,该核心板体10具有多个连通该第一侧10a与第二侧10b的导电通孔100,以电性连接该第一线路结构11及该第二线路结构12,且该第一线路结构11的布线层数及该第二线路结构12的布线层数不相同。Fig. 1 is a cross-sectional view of an existing package substrate 1. As shown in Fig. 1, the package substrate 1 includes a core board 10 having a first side 10a and a second side 10b opposite to each other, and a first circuit structure 11 is formed on the first side 10a of the core board 10, and a second circuit structure 12 is formed on the second side 10b of the core board 10, wherein the core board 10 has a plurality of conductive through holes 100 connecting the first side 10a and the second side 10b to electrically connect the first circuit structure 11 and the second circuit structure 12, and the number of wiring layers of the first circuit structure 11 and the number of wiring layers of the second circuit structure 12 are different.

然而,现有封装基板1于制作过程中,先于该核心板体10的第一侧10a制作该第一线路结构11,再于该第二侧10b制作该第二线路结构12,故于制作该第二线路结构12时,容易因该第一线路结构11的布线层数及该第二线路结构12的布线层数不相同而发生应力分布不均的问题,导致该封装基板1发生翘曲的问题,进而使该封装基板1的生产良率不佳。However, in the manufacturing process of the existing packaging substrate 1, the first circuit structure 11 is first manufactured on the first side 10a of the core board 10, and then the second circuit structure 12 is manufactured on the second side 10b. Therefore, when manufacturing the second circuit structure 12, it is easy to cause uneven stress distribution due to the different number of wiring layers of the first circuit structure 11 and the second circuit structure 12, resulting in warping of the packaging substrate 1, thereby causing poor production yield of the packaging substrate 1.

因此,如何克服上述现有制法的问题,实已成目前亟欲解决的课题。Therefore, how to overcome the problems of the above-mentioned existing manufacturing methods has become a topic that needs to be solved urgently.

发明内容Summary of the invention

鉴于上述现有技术的种种缺失,本发明提供一种封装基板的制法,包括:提供具有相对的第一表面及第二表面的承载件;于该承载件的第一表面及第二表面上均依序形成绝缘层与核心板体,以令各该绝缘层结合于该承载件上,其中,该核心板体具有相对的第一侧及第二侧,以令各该核心板体以其第一侧结合该绝缘层,且各该核心板体具有多个连通该第一侧与第二侧的导电通孔;形成一第二线路结构于各该核心板体的第二侧上;移除该承载件,以获取不对称式基板结构;以及于该绝缘层上形成第一线路结构,其中,该第一线路结构的布线层数不同于该第二线路结构的布线层数。In view of the various deficiencies of the above-mentioned prior art, the present invention provides a method for manufacturing a packaging substrate, comprising: providing a carrier having a first surface and a second surface relative to each other; forming an insulating layer and a core board body in sequence on the first surface and the second surface of the carrier so that each of the insulating layers is combined with the carrier, wherein the core board body has a first side and a second side relative to each other so that each of the core boards is combined with the insulating layer with its first side, and each of the core boards has a plurality of conductive through holes connecting the first side and the second side; forming a second circuit structure on the second side of each of the core boards; removing the carrier to obtain an asymmetric substrate structure; and forming a first circuit structure on the insulating layer, wherein the number of wiring layers of the first circuit structure is different from the number of wiring layers of the second circuit structure.

前述的制法中,还包括于该绝缘层上形成该第一线路结构时,同时制作该第二线路结构的另一线路层。The aforementioned manufacturing method further includes forming another circuit layer of the second circuit structure while forming the first circuit structure on the insulating layer.

前述的制法中,该承载件包含铜箔或预浸材。In the aforementioned manufacturing method, the carrier comprises copper foil or prepreg.

前述的制法中,该核心板体还具有多个电性连接该导电通孔的内线路层。In the aforementioned manufacturing method, the core board also has a plurality of inner circuit layers electrically connected to the conductive through holes.

前述的制法中,该第一线路结构包含有该绝缘层、及结合该绝缘层的第一线路层。In the aforementioned manufacturing method, the first circuit structure includes the insulating layer and the first circuit layer combined with the insulating layer.

前述的制法中,该第一线路结构包含有该绝缘层、至少一设于该绝缘层上的第一介电层、及结合该绝缘层与该第一介电层的第一线路层。例如,该第一介电层以压合方式形成于该核心板体的第一侧。In the above-mentioned manufacturing method, the first circuit structure includes the insulating layer, at least one first dielectric layer disposed on the insulating layer, and a first circuit layer combining the insulating layer and the first dielectric layer. For example, the first dielectric layer is formed on the first side of the core board by lamination.

前述的制法中,该第二线路结构包含有至少一第二介电层、及结合该第二介电层的第二线路层。例如,该第二介电层以压合方式形成于该核心板体的第二侧。In the above-mentioned manufacturing method, the second circuit structure includes at least one second dielectric layer and a second circuit layer combined with the second dielectric layer. For example, the second dielectric layer is formed on the second side of the core board by lamination.

前述的制法中,该绝缘层与该核心板体以压合方式形成于该承载件上。In the aforementioned manufacturing method, the insulating layer and the core board are formed on the carrier by pressing.

由上可知,本发明的封装基板的制法中,主要借由同时于该承载件的第一与第二表面上制作第二线路结构,故相较于现有技术,本发明可避免于制作该第二线路结构时发生翘曲。As can be seen from the above, in the method for manufacturing the package substrate of the present invention, the second circuit structure is mainly manufactured on the first and second surfaces of the carrier at the same time. Therefore, compared with the prior art, the present invention can avoid warping when manufacturing the second circuit structure.

再者,本发明的封装基板的制法中,于移除该承载件后,即使该不对称式基板结构的上、下侧的布线层数不相等(或上、下侧的结构厚度不一致),仍因同时于该核心板体的第一侧与第二侧制作第一线路结构(如第一线路层)与第二线路结构的另一线路层(如第二线路层),而可避免发生翘曲的现象。Furthermore, in the method for manufacturing the packaging substrate of the present invention, after removing the carrier, even if the number of wiring layers on the upper and lower sides of the asymmetric substrate structure is not equal (or the structural thicknesses on the upper and lower sides are inconsistent), warping can be avoided because the first circuit structure (such as the first circuit layer) and another circuit layer of the second circuit structure (such as the second circuit layer) are simultaneously manufactured on the first side and the second side of the core board.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1为现有封装基板的剖视图。FIG. 1 is a cross-sectional view of a conventional packaging substrate.

图2A至图2F为本发明的封装基板的制法的剖面示意图。2A to 2F are cross-sectional views of a method for manufacturing a packaging substrate according to the present invention.

图2A-1为图2A的承载件的另一态样的剖面示意图。FIG. 2A-1 is a cross-sectional schematic diagram of another embodiment of the carrier of FIG. 2A .

图3及图4为本发明的封装基板的制法的其它不同实施例的剖面示意图。3 and 4 are cross-sectional views of other different embodiments of the method for manufacturing a package substrate of the present invention.

其中,附图标记说明如下:The reference numerals are described as follows:

1,2:封装基板1, 2: Package substrate

10,20:核心板体10, 20: core board

10a,20a:第一侧10a, 20a: First side

10b,20b:第二侧10b, 20b: Second side

100,200:导电通孔100, 200: Conductive vias

11,21:第一线路结构11, 21: First line structure

12,22:第二线路结构12, 22: Second line structure

2a:不对称式基板结构2a: Asymmetric substrate structure

201:塞孔材料201: Plug material

21b:第一导电盲孔21b: First conductive blind hole

210:第一内线路层210: First inner circuit layer

211:绝缘层211: Insulation layer

212,214,216:第一线路层212, 214, 216: First circuit layer

213,215:第一介电层213, 215: first dielectric layer

22a:金属层22a: Metal layer

22b:第二导电盲孔22b: Second conductive blind hole

220:第二内线路层220: Second inner circuit layer

221,223,225,227,229:第二介电层221, 223, 225, 227, 229: Second dielectric layer

222,224,226,228,320:第二线路层222, 224, 226, 228, 320: Second circuit layer

410,420:内线路层410, 420: Inner circuit layer

9:承载件9: Bearing parts

9a:第一表面9a: First surface

9b:第二表面9b: Second surface

90,90a,90b:铜箔90, 90a, 90b: copper foil

91:板体。91: Board body.

具体实施方式DETAILED DESCRIPTION

以下借由特定的具体实施例说明本发明的实施方式,熟悉此技艺的人士可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。The following describes the implementation of the present invention by means of specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供熟悉此技艺的人士的了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“下”、“第一”、“第二”、“一”等的用语,亦仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当亦视为本发明可实施的范畴。It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for the understanding and reading of people familiar with this technology, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention. At the same time, the terms such as "upper", "lower", "first", "second", "one", etc. cited in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

图2A至图2F为本发明的封装基板2的制法的剖面示意图。2A to 2F are cross-sectional views of a method for manufacturing a package substrate 2 according to the present invention.

如图2A所示,提供一承载件9、多个核心板体20、多个绝缘层211及多个具有金属层22a的第二介电层221,其中,该承载件9具有相对的第一表面9a及第二表面9b。As shown in FIG. 2A , a carrier 9 , a plurality of core boards 20 , a plurality of insulating layers 211 and a plurality of second dielectric layers 221 having metal layers 22 a are provided, wherein the carrier 9 has a first surface 9 a and a second surface 9 b opposite to each other.

于本实施例中,该承载件9为暂时性载板,其板体91可为如双顺丁烯二酸酰亚胺/三氮阱(Bismaleimide triazine,简称BT)等的有机聚合板材或铜箔基板。例如,该承载件9为一铜箔基板,其包含铜箔90,且于该铜箔90上可依需求设有一剥离层(图未示)。应可理解地,有关暂时性载板的种类繁多,如铝、铜或不锈钢等的金属板、具有金属表面的预浸材(prepreg)所构成的板材、如图2A-1所示的内埋贴合双铜箔90a,90b的基材或其它等,可依成本需求选用,并无特别限制。In this embodiment, the carrier 9 is a temporary carrier, and its plate body 91 can be an organic polymer plate such as bismaleimide triazine (BT) or a copper foil substrate. For example, the carrier 9 is a copper foil substrate, which includes a copper foil 90, and a peeling layer (not shown) can be provided on the copper foil 90 as required. It should be understood that there are many types of temporary carriers, such as metal plates such as aluminum, copper or stainless steel, plates composed of prepreg with a metal surface, substrates with embedded double copper foils 90a, 90b as shown in FIG. 2A-1, or other types, which can be selected according to cost requirements without special restrictions.

再者,该核心板体20为单一核心层规格,其具有相对的第一侧20a及第二侧20b,并于该核心板体20的第一侧20a及第二侧20b上布设有第一内线路层210与第二内线路层220,且该核心板体20具有多个连通该第一侧20a与第二侧20b的导电通孔200,以电性连接该第一内线路层210与第二内线路层220。Furthermore, the core board 20 is a single core layer specification, which has a first side 20a and a second side 20b opposite to each other, and a first inner circuit layer 210 and a second inner circuit layer 220 are arranged on the first side 20a and the second side 20b of the core board 20, and the core board 20 has a plurality of conductive through holes 200 connecting the first side 20a and the second side 20b to electrically connect the first inner circuit layer 210 and the second inner circuit layer 220.

另外,该导电通孔200中为中空柱状,其可于中空处填满塞孔材料201,其中,该塞孔材料201的种类繁多,如导电胶、油墨等,并无特别限制。应可理解地,于其他实施例中,该导电通孔200亦可为实心金属柱体,而无需填入塞孔材料201。In addition, the conductive via 200 is a hollow column, and the hollow part thereof can be filled with a plugging material 201, wherein the plugging material 201 can be of various types, such as conductive glue, ink, etc., and is not particularly limited. It should be understood that in other embodiments, the conductive via 200 can also be a solid metal column without being filled with the plugging material 201.

另外,该绝缘层211为介电层,如聚对二唑苯(Polybenzoxazole,简称PBO)、聚酰亚胺(Polyimide,简称PI)、预浸材(Prepreg,简称PP)或其它等介电材。In addition, the insulating layer 211 is a dielectric layer, such as polybenzoxazole (PBO), polyimide (PI), prepreg (PP) or other dielectric materials.

如图2B所示,将该核心板体20、该绝缘层211及该第二介电层221以压合方式对称形成于该承载件9的第一表面9a及第二表面9b上,使该核心板体20以其第一侧20a结合该绝缘层211,而以第二侧20b结合该第二介电层221,且该金属层22a位于最外侧。As shown in Figure 2B, the core board 20, the insulating layer 211 and the second dielectric layer 221 are symmetrically formed on the first surface 9a and the second surface 9b of the carrier 9 by pressing, so that the core board 20 is combined with the insulating layer 211 with its first side 20a and combined with the second dielectric layer 221 with its second side 20b, and the metal layer 22a is located at the outermost side.

如图2C所示,将该金属层22a进行图案化制程,以形成第二线路层222,并于该第二介电层221中形成电性连接该第二内线路层220与该第二线路层222的多个第二导电盲孔22b。As shown in FIG. 2C , the metal layer 22 a is patterned to form a second circuit layer 222 , and a plurality of second conductive blind vias 22 b electrically connecting the second inner circuit layer 220 and the second circuit layer 222 are formed in the second dielectric layer 221 .

于本实施例中,该第二线路层222与第二介电层221可作为第二线路结构22,使各该核心板体20的第二侧20b上分别形成一第二线路结构22。In this embodiment, the second circuit layer 222 and the second dielectric layer 221 can be used as the second circuit structure 22 , so that a second circuit structure 22 is formed on the second side 20 b of each core board 20 .

如图2D所示,该第二线路结构22的布线层数可依需求设计,故可于该第二线路层222与第二介电层221上压合具有金属层的第二介电层223,以制作第二线路层224,且形成不对称式基板结构2a。As shown in FIG. 2D , the number of wiring layers of the second circuit structure 22 can be designed according to demand, so a second dielectric layer 223 having a metal layer can be laminated on the second circuit layer 222 and the second dielectric layer 221 to manufacture a second circuit layer 224 and form an asymmetric substrate structure 2a.

于本实施例中,基于保护该第二线路层224,故于该第二线路层224上压合一具有金属层22a的第二介电层225,以于该第二线路结构22的外侧呈现该金属层22a。In this embodiment, in order to protect the second circuit layer 224 , a second dielectric layer 225 having a metal layer 22 a is laminated on the second circuit layer 224 , so that the metal layer 22 a is presented on the outer side of the second circuit structure 22 .

如图2E所示,借由剥离层移除该承载件9,以获取不对称式基板结构2a。As shown in FIG. 2E , the carrier 9 is removed by peeling off the layer to obtain an asymmetric substrate structure 2 a .

于本实施例中,该不对称式基板结构2a具有该铜箔90,供后续制作线路层。应可理解地,由于制作线路层的方式繁多,故于其它实施例中,于移除该承载件9时,亦可移除该铜箔90,并不影响后续制作线路层的作业。In this embodiment, the asymmetric substrate structure 2a has the copper foil 90 for subsequent production of the circuit layer. It should be understood that since there are many ways to produce the circuit layer, in other embodiments, when removing the carrier 9, the copper foil 90 can also be removed without affecting the subsequent production of the circuit layer.

如图2F所示,于该绝缘层211上将该铜箔90进行图案化制程,以令该铜箔90形成第一线路层212,并于该绝缘层211中形成电性连接该第一内线路层210与该第一线路层212的多个第一导电盲孔21b,以形成第一线路结构21,且可依需求将该金属层22a进行图案化制程,以形成该第二线路结构22的第二线路层226,而得到一非对称式布线配置的封装基板2,其中,该第一线路结构21的布线层数不同于该第二线路结构22的布线层数。As shown in FIG. 2F , the copper foil 90 is patterned on the insulating layer 211 to form a first circuit layer 212 with the copper foil 90, and a plurality of first conductive blind vias 21b electrically connecting the first inner circuit layer 210 and the first circuit layer 212 are formed in the insulating layer 211 to form a first circuit structure 21. The metal layer 22a can be patterned as required to form a second circuit layer 226 of the second circuit structure 22, thereby obtaining a packaging substrate 2 with an asymmetric wiring configuration, wherein the number of wiring layers of the first circuit structure 21 is different from the number of wiring layers of the second circuit structure 22.

于本实施例中,该第一线路结构21包含有该绝缘层211、及结合该绝缘层211的第一线路层212,且该第二线路结构22包含有多个第二介电层221,223,225、及结合该些第二介电层221,223,225的第二线路层222,224,226,故该第二线路结构22的布线层数为三层,其多于该第一线路结构21的一层布线层数。In this embodiment, the first circuit structure 21 includes the insulating layer 211 and the first circuit layer 212 combined with the insulating layer 211, and the second circuit structure 22 includes multiple second dielectric layers 221, 223, 225, and second circuit layers 222, 224, 226 combined with the second dielectric layers 221, 223, 225. Therefore, the number of wiring layers of the second circuit structure 22 is three, which is one more than the number of wiring layers of the first circuit structure 21.

再者,该第一线路结构21借由压合方式,可于该核心板体20的第一侧20a形成所需的布线层数,如图3所示的多个第一介电层213,215及三层第一线路层212,214,216;同理地,该第二线路结构22可借由压合方式,于该核心板体20的第二侧20b形成所需的布线层数,如图3所示的五层第二线路层222,224,226,228,320,以及增加第二介电层227,229。Furthermore, the first circuit structure 21 can form the required number of wiring layers on the first side 20a of the core board 20 by pressing, such as the multiple first dielectric layers 213, 215 and three first circuit layers 212, 214, 216 shown in Figure 3; similarly, the second circuit structure 22 can form the required number of wiring layers on the second side 20b of the core board 20 by pressing, such as the five second circuit layers 222, 224, 226, 228, 320 shown in Figure 3, and additional second dielectric layers 227, 229.

另外,该核心板体20内亦可依需求配置多个电性连接该导电通孔200的内线路层410,420,如图4所示。In addition, a plurality of inner circuit layers 410 , 420 electrically connected to the conductive vias 200 may be disposed in the core board 20 as required, as shown in FIG. 4 .

另外,该第一线路结构21及第二线路结构22的介电层的材料包括无机材料(如氧化硅、氮化硅、氮氧化硅或其它合适的材料)、有机材料(如聚酰亚胺(PI)、聚苯唑(PBO)、预浸材(PP)、环氧树脂(Epoxy)、苯并环丁烯(Benzocyclobutene,简称BCB)或其它合适的材料),且该第一线路结构21及第二线路结构22的线路层的材料为铜或其它金属。In addition, the materials of the dielectric layers of the first circuit structure 21 and the second circuit structure 22 include inorganic materials (such as silicon oxide, silicon nitride, silicon oxynitride or other suitable materials), organic materials (such as polyimide (PI), polybenzazole (PBO), prepreg (PP), epoxy resin (Epoxy), benzocyclobutene (BCB) or other suitable materials), and the materials of the circuit layers of the first circuit structure 21 and the second circuit structure 22 are copper or other metals.

因此,本发明的制法,主要借由同时于该承载件9的第一表面9a与第二表面9b制作线路结构,以于移除该承载件9后,可获取该不对称式基板结构2a,再进一步制得该封装基板2,故相较于现有技术,本发明借由该承载件9可避免该封装基板2于制作该第二线路结构22时发生翘曲,且于移除该承载件9后,即使该不对称式基板结构2a的上、下两侧的布线层数不相等(或结构厚度不一致),仍因同时于该核心板体20的第一侧20a与第二侧20b制作第一线路层212,214,216与第二线路层226,228,320而可避免发生翘曲。Therefore, the manufacturing method of the present invention mainly manufactures the circuit structure on the first surface 9a and the second surface 9b of the carrier 9 at the same time, so that after removing the carrier 9, the asymmetric substrate structure 2a can be obtained, and then the packaging substrate 2 can be further manufactured. Therefore, compared with the prior art, the present invention can prevent the packaging substrate 2 from warping when manufacturing the second circuit structure 22 by using the carrier 9, and after removing the carrier 9, even if the number of wiring layers on the upper and lower sides of the asymmetric substrate structure 2a is not equal (or the structural thickness is inconsistent), warping can still be avoided because the first circuit layer 212, 214, 216 and the second circuit layer 226, 228, 320 are manufactured on the first side 20a and the second side 20b of the core board 20 at the same time.

综上所述,本发明的封装基板的制法,借由该承载件于其相对两侧同时制作不对称式基板结构,且于移除该承载件后,于该不对称式基板结构的相对两侧同时制作线路层,故本发明的封装基板的制法能避免单一侧布线的情况发生,以避免发生翘曲的问题,因而能维持结构可靠度,进而有效提升产品良率。In summary, the method for manufacturing the packaging substrate of the present invention uses the carrier to simultaneously manufacture an asymmetric substrate structure on two opposite sides thereof, and after removing the carrier, simultaneously manufactures the circuit layer on two opposite sides of the asymmetric substrate structure. Therefore, the method for manufacturing the packaging substrate of the present invention can avoid the situation of wiring on one side to avoid the problem of warping, thereby maintaining structural reliability and effectively improving product yield.

上述实施例仅用以例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟习此项技艺的人士均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。The above embodiments are only used to illustrate the principles and effects of the present invention, and are not used to limit the present invention. Anyone skilled in the art can modify the above embodiments without violating the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be as listed in the claims.

Claims (10)

1. A method of fabricating a package substrate, comprising:
providing a carrier having opposite first and second surfaces;
Sequentially forming an insulating layer and a core plate body on the first surface and the second surface of the bearing piece so as to enable each insulating layer to be combined on the bearing piece, wherein each core plate body is provided with a first side and a second side which are opposite to each other, each core plate body is combined with the insulating layer by the first side, and the core plate body is provided with a plurality of conductive through holes which are communicated with the first side and the second side;
Forming a second circuit structure on the second side of each core board body;
Removing the bearing piece to obtain an asymmetric substrate structure; and
And forming a first circuit structure on the insulating layer, wherein the wiring layer number of the first circuit structure is different from the wiring layer number of the second circuit structure.
2. The method of claim 1, further comprising forming another circuit layer of the second circuit structure simultaneously with the first circuit structure on the insulating layer.
3. The method of claim 1, wherein the carrier comprises copper foil or prepreg.
4. The method of claim 1, wherein the core board further comprises a plurality of inner circuit layers electrically connected to the conductive vias.
5. The method of claim 1, wherein the first circuit structure comprises the insulating layer and a first circuit layer combined with the insulating layer.
6. The method of claim 1, wherein the first circuit structure comprises the insulating layer, at least one first dielectric layer disposed on the insulating layer, and a first circuit layer connecting the insulating layer and the first dielectric layer.
7. The method of claim 6, wherein the first dielectric layer is formed on the first side of the core board body by lamination.
8. The method of claim 1, wherein the second circuit structure comprises at least one second dielectric layer and a second circuit layer combined with the second dielectric layer.
9. The method of claim 8, wherein the second dielectric layer is formed on the second side of the core board body by lamination.
10. The method of claim 1, wherein the insulating layer and the core plate are formed on the carrier by pressing.
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