CN1182587C - High temperature resistant solid piezoresistive flat film force sensitive chip and manufacturing method thereof - Google Patents
High temperature resistant solid piezoresistive flat film force sensitive chip and manufacturing method thereof Download PDFInfo
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- CN1182587C CN1182587C CNB031344461A CN03134446A CN1182587C CN 1182587 C CN1182587 C CN 1182587C CN B031344461 A CNB031344461 A CN B031344461A CN 03134446 A CN03134446 A CN 03134446A CN 1182587 C CN1182587 C CN 1182587C
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000007787 solid Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 238000005259 measurement Methods 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 19
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- -1 oxygen ions Chemical class 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 abstract description 6
- 230000001133 acceleration Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 abstract 2
- 238000007740 vapor deposition Methods 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000003466 welding Methods 0.000 description 9
- 239000011888 foil Substances 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- Measuring Fluid Pressure (AREA)
Abstract
本发明提供了耐高温固态压阻式平膜力敏芯片及其制作方法，该方法采用高能氧离子注入(SIMOX)工艺在硅片下注入形成二氧化硅绝缘层，用气相淀积技术外延单晶硅测量电路层，采用低压气相淀积技术在单晶硅测量电路层上外延氮化硅应力匹配层，然后光刻出四个电阻条R1、R2、R3和R4，得到凸出于二氧化硅表面的“浮雕式”电阻条，通过钛-铂-金梁式引线技术将电阻条连接成为惠斯登测量电路。该芯片的二氧化硅绝缘层避免了测量电路层与硅基底之间因环境温度升高而造成的漏电流，提高了耐高温性能，工作温度范围为-40～350℃，钛-铂-金梁式引线技术解决了力敏芯片的高温引线技术问题。该芯片可适用于耐高温环境的力、压力、位移、加速度、扭矩及流速等传感器。
The invention provides a high-temperature-resistant solid-state piezoresistive flat-film force-sensing chip and a manufacturing method thereof. The method uses a high-energy oxygen ion implantation (SIMOX) process to implant a silicon dioxide insulating layer under the silicon chip, and uses vapor deposition technology to epitaxy a single chip. The crystalline silicon measurement circuit layer is epitaxial silicon nitride stress matching layer on the monocrystalline silicon measurement circuit layer by low-pressure vapor deposition technology, and then photoetched four resistance strips R 1 , R 2 , R 3 and R 4 to obtain a convex Out of the "embossed" resistance strips on the surface of silicon dioxide, the resistance strips are connected into a Wheatstone measurement circuit through titanium-platinum-gold beam lead technology. The silicon dioxide insulating layer of the chip avoids the leakage current caused by the increase of ambient temperature between the measurement circuit layer and the silicon substrate, and improves the high temperature resistance performance. The working temperature range is -40～350℃, titanium-platinum-gold Beam lead technology solves the problem of high temperature lead technology for force sensitive chips. The chip can be applied to sensors for force, pressure, displacement, acceleration, torque and flow velocity in high temperature environments.
Description
Technical field
The present invention relates to a kind of high temperature resistant sensor measurement chip and preparation method thereof, specifically, relate to a kind of quick chip of solid-state pressure resistance type plane film force that is used for force-sensing sensor and preparation method thereof.
Background technology
At present, the used measuring component of force-sensing sensor has: single metal foil gauge, bridge-type metal strain plate, silicon pressure drag bridge-type foil gauge and the solid-state pressure drag chip of body silicon.
When existing transducer adopts the single metal foil gauge as measuring component, often need be complementary and to constitute measuring unit with other single foil gauge or peripheral circuit, so just exist inconsistency, thereby cause zero-bit output excessive, its certainty of measurement and sensitivity are lower simultaneously.
The bridge-type metal strain plate is a kind of foil gauge of four single metal foil gauges as four resistor stripes on the Wheatstone bridge, because of the metal strain effect, it exists shortcomings such as volume is big, measurement sensitivity is low, electrical error of null position is big, can not detect some micro-members, faint strain.
Four resistor stripes of the Hui Sideng measuring bridge of traditional body silicon pressure sensor chip are to utilize silicon plane ion implantation technology or silicon planar diffusion technology, by the SiO of silicon chip surface
2As injecting or the diffusion mask, treating that doping elements is from SiO
2Mask window injects and is diffused in the silicon chip, forms PN junction at upper strata P type semiconductor resistor stripe and substrate N type silicon.The sensor process of this PN junction structure is simple, be fit to work at normal temperatures, but when temperature was elevated to more than 120 ℃, the PN junction leakage current is very big, and the quick chip of this kind power can't be worked.
Summary of the invention
The object of the present invention is to provide a kind of measured chip that is used for high temperature resistant solid-state pressure resistance type plane film force dependent sensor and preparation method thereof, conventional metals foil gauge volume is excessive, sensitivity is low, electrical error of null position is big and the electrical error of null position of silicon pressure drag bridge-type foil gauge and the big shortcoming of temperature drift to solve.
For achieving the above object, the invention provides quick chip of the solid-state pressure resistance type plane film force of a kind of high temperature resistant silicon strain and preparation method thereof, the quick chip of high temperature resistant solid-state pressure resistance type plane film force comprises silicon base, and the upper surface 0.1 μ m～0.2 μ m place that is characterized in the distance silicon base is provided with the silicon dioxide separator that a thickness is 0.3 μ m～0.4 μ m; The surface of silicon base is provided with the Hui Sideng silica measurement circuit layer that a thickness is 1.2 μ m～2 μ m; And Hui Sideng silica measurement circuit layer is provided with the silicon nitride stress matching layer that a thickness is 0.1 μ m～0.2 μ m.
The manufacture method of the quick chip of high temperature resistant solid-state pressure resistance type plane film force may further comprise the steps:
A), adopt the silicon base of N type (001) crystal face, be the silicon dioxide separator of 0.3 μ m～0.4 μ m with the energetic oxygen ions injection method at upper surface 0.1 μ m～0.2 μ m place formation thickness of distance silicon base;
B), on the silicon base surface, be about the thick monocrystalline silicon measuring circuit layer of 1.2 μ m～2 μ m with the vapor phase deposition technique epitaxial thickness;
C), with low-pressure vapor phase deposition technology epitaxial thickness on monocrystalline silicon measuring circuit layer be one deck silicon nitride stress coupling of 0.1 μ m～0.2 μ m;
D), make four resistance R of Wheatstone bridge by lithography along [110] crystal orientation of monocrystalline silicon measuring circuit layer and [1 10] crystal orientation
1, R
2, R
3And R
4, the using plasma lithographic technique is carved silicon nitride stress matching layer and the monocrystalline silicon measuring circuit layer beyond the resistor stripe figure;
E), use titanium-platinum-Jin beam lead technique with four resistance R
1, R
2, R
3And R
4Couple together;
F), be 0.18mm～0.2mm with thinning back side to the thickness of chip, be diced into single chip then.
Four resistance R of above-mentioned Wheatstone bridge
1, R
2, R
3And R
4For protruding from the sculptured resistor stripe measuring circuit on silicon dioxide insulating layer surface, wherein resistor stripe R
1And R
4[110] crystal orientation along monocrystalline silicon measuring circuit layer is arranged in parallel in resistor stripe R
2And R
3Both sides, resistor stripe R
2And R
3Along the parallel resistor stripe R that is arranged in parallel in [1 10] crystal orientation
1And R
4The centre, four resistance are butterfly-shaped layout.
Adopt energetic oxygen ions to inject the silicon dioxide insulating layer of the uniformity of (SIMOX) technology formation, the monocrystalline silicon Hui Sideng measuring circuit and the base silicon on upper strata are kept apart, avoided the leakage current that raises and cause because of ambient temperature between measuring circuit layer and the silicon base.Adopt titanium-platinum-Jin beam lead technique, promptly the metal that contacts with the silicon resistor bar is a titanium, and the middle diffuse metal that stops is a platinum, and extraneous beam metal is a gold, adopts titanium-platinum-Jin beam lead to solve the high temperature lead technology problem of the quick chip of power.Therefore the transducer that is formed by the quick Chip Packaging of the high temperature resistant solid-state pressure resistance type plane film force of SOI has resistant to elevated temperatures characteristic.The advantage of this chip has satisfied the measurement requirement under the hot environment when can guaranteeing than high measurement sensitivity.
Description of drawings
Fig. 1 represents the solid-state piezoresistance sensor manufacture method of silicon isolation SOI microstrain of the present invention;
Fig. 2 represents the quick chip composition of power of the present invention structure chart;
Wherein Fig. 2 (a) is the circuit structure diagram of the quick chip of power;
Fig. 2 (b) is for protruding from " sculptured " resistor stripe measuring circuit of silicon face;
Fig. 3 represents the concrete scope of application of the present invention and mode;
Wherein Fig. 3 (a) is that the quick chip of power uses on spring beam;
Fig. 3 (b) acts on the flexible member for the quick chip of power.
Embodiment
The present invention is illustrated in conjunction with the accompanying drawings by embodiment, and embodiment of the present invention are described in detail in detail.
With reference to Fig. 1, the present invention is that the upper surface 0.1 μ m～0.2 μ m place in distance silicon base 1 makes it form the silicon dioxide separator 2 that a thickness is 0.3 μ m～0.4 μ m with the energetic oxygen ions injection method; On the surface of silicon base 1, make it form the Hui Sideng silica measurement circuit layer 3 that a thickness is 1.2 μ m～2 μ m with vapor phase deposition technique; And on Hui Sideng silica measurement circuit layer (3), make it form the silicon nitride stress matching layer 4 that a thickness is 0.1 μ m～0.2 μ m with low-pressure vapor phase deposit (LPCVD) technology.
With reference to Fig. 2, the manufacture method of the quick chip of high temperature resistant solid-state pressure resistance type plane film force of the present invention is described:
A), on the monocrystalline silicon piece 1 of N type (001) crystal face, injecting (SIMOX) technology with energetic oxygen ions is the silicon dioxide separator 2 of 0.4 μ m at the upper surface 0.2 μ m place of distance monocrystalline silicon piece formation thickness;
B), on the surface of monocrystalline silicon piece 1, be the thick monocrystalline silicon measuring circuit layers 3 of 2 μ m with the vapor phase deposition technique epitaxial thickness;
C), with low-pressure vapor phase deposit (LPCVD) technology epitaxial thickness on monocrystalline silicon measuring circuit layer 3 be one deck silicon nitride stress coupling 4 of 0.1 μ m;
D), make four resistance R of Wheatstone bridge by lithography along [110] crystal orientation of monocrystalline silicon measuring circuit layer 3 and [1 10] crystal orientation
1, R
2, R
3And E
4, wherein the width of resistor stripe is 10 μ m～20 μ m, resistor stripe length is 600 μ m～1200 μ m.The using plasma lithographic technique is carved silicon nitride stress matching layer 4 and the monocrystalline silicon measuring circuit layer 3 beyond the resistor stripe figure;
E), use titanium-platinum-Jin beam lead technique with four resistance R
1, R
2, R
3And R
4Couple together.By titanium-platinum-Jin beam lead process four resistor stripes are coupled together and to form the Hui Sideng measuring circuit.Resistor stripe R
1And R
2Connect resistor stripe R by a public press welding block 6
3And R
4Connect by a public press welding block 7; Press welding block 5,8,9,10 respectively with resistor stripe R
1, R
4, R
3And R
2The other end link to each other, the effect of press welding block is to realize in the chip and the outer lead-in wire of chip.By resistor stripe R
1, R
2, R
3And R
4When forming the Hui Sideng measuring circuit, press welding block 5 and 9 short circuits are together to positive source 5V, and press welding block 4 is connected with power supply ground with 10 short circuits together, and welding block 6 and 7 is the output of electric bridge.
F), with the thinning back side of chip to 0.18mm～0.2mm.For improving the measurement sensitivity of sensor chip, the thinning back side of transducer to thickness is 0.2mm, is diced into single chip then and promptly obtains the quick chip of the high temperature resistant solid-state pressure resistance type plane film force of designed SOI.
Four resistance R of the Wheatstone bridge that makes by lithography
1, R
2, R
3And R
4Protrude from silicon dioxide insulating layer 2 surfaces, be sculptured resistance measuring circuit; Resistor stripe R wherein
1And R
4[110] crystal orientation along monocrystalline silicon measuring circuit layer 3 is arranged in parallel in resistor stripe R
2And R
3Both sides, resistor stripe R
2And R
3Along the parallel resistor stripe R that is arranged in parallel in [1 10] crystal orientation
1And R
4The centre, four resistance R
1, R
2, R
3And R
4Be the butterfly-shaped surface that is arranged in silicon dioxide insulating layer 2.
Owing to through the insulating barrier silicon dioxide of SIMOX technology formation uniformity, the monocrystalline silicon Hui Sideng measuring circuit and the base silicon on upper strata are kept apart, have avoided the leakage current that raises and cause because of ambient temperature between measuring circuit layer and the silicon base.For guaranteeing to have between press welding block and the resistor stripe reliability of good Ohmic contact and sensor chip outer lead under hot environment, press welding block adopts titanium-platinum-Jin beam lead technique, promptly the metal that contacts with the silicon resistor bar is a titanium, titanium and silicon have very little contact resistance, form good Ohmic contact easily; The middle diffuse metal that stops is a platinum, has good corrosion resistance; Extraneous beam metal is a gold, because of the easy bonding of Jin Liang, make easily, and higher corrosion resistance is arranged, the thickness ratio of titanium-platinum-Jin is 500: 500: 5000 ( of unit), employing titanium-platinum-Jin beam lead has solved the high temperature lead technology problem of the quick chip of power, so the transducer that is formed by the quick Chip Packaging of the high temperature resistant solid-state pressure resistance type plane film force of SOI has resistant to elevated temperatures characteristic.The advantage of the quick chip of solid-state pressure resistance type plane film force can satisfy the measurement requirement under the hot environment when just being can guarantee higher sensitivity when measuring.
Use the quick chip of this power and can produce transducer on the multiple different mechanism of action, as pulling force, tension force, displacement, moment of torsion, transducers such as pressure, measured body can be directly changed into changes in resistance by the quick chip of SOI silicon power, but reach measured body is detected conveniently and accurately, must be by certain flexible member and circuit form, become pulling force when using the quick chip manufacturing of plane film force, tension force, displacement, moment of torsion, during transducers such as pressure, usually need to be consolidated by technologies such as glass dust sintering between high temperature resistant quick chip of solid-state pressure resistance type plane film force of SOI and the metallic elastic component, wherein metallic elastic component requires as far as possible consistent with silicon of its coefficient of thermal expansion, to reduce the influence of thermal mismatch stress, stressed on the silicon diaphragm be [110] or [1 10] direction along the crystal orientation, i.e. two arm resistance R of Wheatstone bridge on SOI silicon diaphragm (001) the work crystal face
1, R
4Place [110] crystal orientation, in addition two arm resistance R
2, R
3Place [1 10] crystal orientation.
With reference to Fig. 3 (a), when ergometry, displacement, acceleration, the quick chip 11 of power of the present invention is posted on an end of cantilever beam 12, extraneous power, displacement or acceleration act on the other end of transducer cantilever beam 12, cause the distortion of cantilever beam, and produce certain strain on the surface of cantilever beam, SOI senser 11 is under the stabilized power source excitation, this strain can be converted to certain voltage signal, reach the purpose of ergometry, displacement, acceleration.
With reference to Fig. 3 (b), when measuring pulling force, tension force, tested pulling force, tension force act on the flexible member 13, flexible member 13 is deformed, produce corresponding strain on the flexible member surface, SOI is high temperature resistant, and the quick chip 11 of solid-state pressure resistance type plane film force can convert this strain to corresponding with it voltage signal, thereby reaches the purpose of measuring pulling force, tension force.
The positive and negative variation of the resistance change rate Δ R/R of SOI the is high temperature resistant quick chip of solid-state pressure resistance type plane film force is realized by the positive and negative variation of stress difference.For R
1, R
4, longitudinal stress σ
l=σ
y, lateral stress σ
t=σ
xFor R
2, R
3, longitudinal stress σ
l=σ
x, lateral stress σ
t=σ
yVertical piezoresistance coefficient π
l=1/2 π
44, horizontal piezoresistance coefficient π
t=-1/2 π
44, when strain took place, each resistance rate of change was respectively on the Wheatstone bridge:
Wherein: σ
y, σ
xBe respectively the stress of flexible member measurement point vertical and horizontal.
The Wheatstone bridge of being made up of four " sculptured " resistance that protrude from silicon face can reflect delicately that earth resistance that stress causes changes; Can eliminate the influence of the inhomogeneities and the temperature coefficient of resistance of diffusion resistance itself again effectively.
The result that below to be the present invention draw after implementing: the overall dimension of SOI the is high temperature resistant quick chip of solid-state pressure resistance type plane film force: 2.0mm * 2.0mm * 0.18mm; Sensitivity: 〉=0.1mv/ μ ε; Strain limit: 〉=3000 μ ε; Single resistor stripe resistance: 1200 Ω; Power supply: 5VDC; Working temperature :-40～350 ℃; Fatigue life: 〉=10
7Inferior.
Claims (6)
1, the quick chip of a kind of high temperature resistant solid-state pressure resistance type plane film force, this chip includes silicon base (1), it is characterized in that the upper surface 0.1 μ m～0.2 μ m place in distance silicon base (1) is provided with the silicon dioxide separator (2) that a thickness is 0.3 μ m～0.4 μ m; The surface of silicon base (1) is provided with the Hui Sideng silica measurement circuit layer (3) that a thickness is 1.2 μ m～2 μ m; And Hui Sideng silica measurement circuit layer (3) is provided with the silicon nitride stress matching layer (4) that a thickness is 0.1 μ m～0.2 μ m.
2, the quick chip of high temperature resistant solid-state pressure resistance type plane film force according to claim 1 is characterized in that the upper surface 0.1 μ m～0.2 μ m place in silicon base (1) is provided with the silicon dioxide separator (2) that a thickness is 0.4 μ m.
3, the quick chip of high temperature resistant solid-state pressure resistance type plane film force according to claim 1 is characterized in that the surface of silicon base (1) is provided with the Hui Sideng silica measurement circuit layer (3) that a thickness is 2 μ m.
4, the quick chip of high temperature resistant solid-state pressure resistance type plane film force according to claim 1 is characterized in that Hui Sideng silica measurement circuit layer (3) is provided with the silicon nitride stress matching layer (4) that a thickness is 0.1 μ m.
5, the manufacture method of the quick chip of a kind of high temperature resistant solid-state pressure resistance type plane film force, its feature may further comprise the steps:
A), adopt the silicon base (1) of N type (001) crystal face, be the silicon dioxide separator (2) of 0.3 μ m～0.4 μ m with the energetic oxygen ions injection method at upper surface 0.1 μ m～0.2 μ m place formation thickness of distance silicon base (1);
B), on silicon base (1) surface, be the thick monocrystalline silicon measuring circuit layers (3) of 1.2 μ m～2 μ m with the vapor phase deposition technique epitaxial thickness;
C), go up one deck silicon nitride stress coupling (4) that epitaxial thickness is 0.1 μ m～0.2 μ m with the low-pressure vapor phase deposition technology at monocrystalline silicon measuring circuit layer (3);
D), make four resistance R of Wheatstone bridge by lithography along [110] crystal orientation of monocrystalline silicon measuring circuit layer (3) and [1 10] crystal orientation
1, R
2, R
3And R
4, the using plasma lithographic technique is carved silicon nitride stress matching layer (4) and the monocrystalline silicon measuring circuit layer (3) beyond the resistor stripe figure;
E), use titanium-platinum-Jin beam lead technique with four resistance R
1, R
2, R
3And R
4Couple together;
F), be 0.18mm～0.2mm with thinning back side to the thickness of chip, be diced into single chip then.
6, the manufacture method of the quick chip of high temperature resistant solid-state pressure resistance type plane film force as claimed in claim 5 is characterized in that four resistance R of said Wheatstone bridge
1, R
2, R
3And R
4For protruding from the sculptured resistor stripe measuring circuit on silicon dioxide insulating layer (2) surface, wherein resistor stripe R
1And R
4[110] crystal orientation along monocrystalline silicon measuring circuit layer (3) is arranged in parallel in resistor stripe R
2And R
3Both sides, resistor stripe R
2And R
3Along the parallel resistor stripe R that is arranged in parallel in [1 10] crystal orientation
1And R
4The centre, four resistance are butterfly-shaped layout.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031344461A CN1182587C (en) | 2003-07-31 | 2003-07-31 | High temperature resistant solid piezoresistive flat film force sensitive chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031344461A CN1182587C (en) | 2003-07-31 | 2003-07-31 | High temperature resistant solid piezoresistive flat film force sensitive chip and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1484319A CN1484319A (en) | 2004-03-24 |
| CN1182587C true CN1182587C (en) | 2004-12-29 |
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|---|---|---|---|
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102980695B (en) * | 2012-11-29 | 2015-04-15 | 北京大学 | MEMS (Micro Electro Mechanical System) piezoresistive type absolute pressure sensor based on SOI (Silicon on Insulator) silicon chip |
| CN102980694B (en) * | 2012-11-29 | 2015-07-29 | 北京大学 | Without the MEMS piezoresistive pressure transducer and preparation method thereof of strain films structure |
| CN103398806B (en) * | 2013-07-25 | 2015-07-22 | 清华大学 | Chip of 6H-SiC high-temperature pressure sensor |
| JP7320402B2 (en) * | 2019-08-08 | 2023-08-03 | ローム株式会社 | MEMS sensor |
| CN111890249B (en) * | 2020-07-10 | 2021-11-16 | 东南大学 | A Chip Clamping Fixing and Chip Parallelism Measuring Structure for Ultrasonic Bonding |
| CN112284605B (en) * | 2020-09-30 | 2021-10-22 | 西安交通大学 | A kind of cross island beam film high temperature micro pressure sensor chip and preparation method |
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2003
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| Publication number | Publication date |
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| CN1484319A (en) | 2004-03-24 |
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