CN220056358U - Ultralow pressure core body with stress buffer groove - Google Patents
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- CN220056358U CN220056358U CN202223381590.6U CN202223381590U CN220056358U CN 220056358 U CN220056358 U CN 220056358U CN 202223381590 U CN202223381590 U CN 202223381590U CN 220056358 U CN220056358 U CN 220056358U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
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- Pressure Sensors (AREA)
Abstract
The utility model relates to the technical field of pressure cores, and particularly discloses an ultralow pressure core with a stress buffer groove, which comprises a core main body and a substrate connected to the bottom of the core main body; the core body comprises a silicon wafer supporting substrate and a customized SOI wafer, wherein a cavity is formed in the customized SOI wafer, a sensitive film suspended on the cavity is arranged on the customized SOI wafer, and a four-flap type beam film structure with an inwards concave edge formed by etching is arranged on the sensitive film; the edge of the four-flap type beam film structure is provided with a piezoresistive region, and the side of the sensitive film is provided with a lead region; the middle part of the silicon wafer supporting substrate is provided with an air hole, and the bottom of the silicon wafer supporting substrate is provided with a buffer groove; the four-flap beam film structure design with the concave edge is adopted in the utility model, so that the stress concentration and uniformity of the piezoresistive region are increased; the customized SOI wafer with the cavity is adopted, so that the complexity of the preparation process is reduced; and the silicon wafer is adopted, so that the thermal stress brought by bonding other non-silicon-based materials is greatly reduced.
Description
Technical Field
The utility model relates to the technical field of pressure cores, in particular to an ultralow pressure core with a stress buffer groove.
Background
The pressure sensor is one of the earliest commercialized and most successful products in all Micro-Electro-MechanicalSystem, MEMS technologies, because the pressure sensing core body adopting the MEMS technology has the advantages of small volume, mass production, easy creation of high added value and the like, and the resolution and the sensitivity are higher than those of the traditional electromechanical system, so that the MEMS pressure sensor is widely applied to the fields of consumer electronics, medical care, industrial control, automobiles, aerospace and the like. MEMS pressure sensors can be divided into five main categories according to their principle of action: piezoresistive, capacitive, piezoelectric, optical interferometric and resonant pressure sensors are among the most popular, and the vast majority of micro-pressure sensing market demands are based on piezoresistive.
The piezoresistive pressure sensor mainly comprises a monocrystalline silicon elastic film piece, a piezoresistor, an interconnection lead and a surface passivation layer, and has the action principle that the piezoresistor is arranged on a sensitive film piece by using a piezoresistance effect measurement pressure, namely a doping technology of diffusion or ion implantation to form a Wheatstone bridge, when the measured pressure acts on the film piece, the film piece deforms due to the stress to cause the change of the resistance value of the piezoresistor, the Wheatstone bridge is unbalanced, the bridge with zero voltage in an equilibrium state obtains an output voltage, and the sensor realizes pressure measurement based on the specific ratio formed by the output voltage and the measured pressure. The piezoresistive pressure sensor has the advantages of simple structure, easy integration and easy measurement, and has the defect that the output of the piezoresistive pressure sensor is easy to drift.
Ideally, the output of the pressure sensor at a particular pressure is unchanged with the passage of time and the change in the outside temperature, however, in practice, both the temperature change and the passage of time have an effect on its output. Stability is the ability of evaluating a pressure sensor to maintain its output index constant for a longer period of time under the same input pressure conditions, and may also be referred to as "long-term stability", and its quality directly affects the validity and accuracy of test system data, so related stability improvement techniques become a common technique of widespread attention in academia and industry. Factors affecting the stability of the pressure sensor are mainly as follows: in the sensor manufacturing process, materials with different structures are processed and assembled under different temperature and stress conditions, and the thermal mismatch problem is difficult to avoid due to the different materials, such as the use of organic epoxy resin glue in the bonding of silicon and glass in the manufacturing process and the subsequent pasting. The different materials and the high temperature process steps lead to residual stress of the core body, and the influence of the residual stress on the long-term stability of the core body is particularly remarkable in the field of micro-pressure sensing.
The long-term stability of the MEMS pressure sensor is related to sensitive materials, manufacturing process and use environment, and is a difficult problem for restricting high-consistency mass production of the sensor. Methods for improving long-term stability include the elimination of residual stress and data compensation by high and low temperature aging. The data compensation can be used for reproducible and quantifiable stability error compensation, but more errors are random errors, and the data compensation method has limitation in practical application along with continuous and natural release of residual stress.
The residual stress mainly comes from two sources, one is a key process in the preparation of the pressure core, the bonding process. Bonding requires high temperature and high voltage, and the bonding substrate material is often glass, which has similar thermal expansion coefficient to silicon, but when the temperature change is large, internal stress is inevitably generated due to inconsistent thermal expansion coefficient. The generation of internal stress caused by bonding is currently unavoidable. When the core is packaged, the core is fixed on a metal, ceramic or plastic substrate by using solder, and the thermal expansion coefficients of the core and the substrate material are also different, so that the mechanical stress is remained. The root cause of the residual stress is seen to be the result of a layer-by-layer stack of different materials, which is unavoidable, but some effective method can be taken to reduce the residual stress when the core is bonded to the substrate. In order to solve the problems, an ultra-low pressure core body with a stress buffer groove is provided.
Disclosure of Invention
The utility model aims to provide an ultralow pressure core body with a stress buffer groove, so as to solve the problem that the pressure sensing core body in the micro-pressure application field in the background art brings residual stress in the die bonding step.
In order to achieve the above purpose, the present utility model provides the following technical solutions:
an ultra-low pressure core with a stress buffer groove comprises a core body and a substrate connected to the bottom of the core body;
the core body comprises a silicon wafer supporting substrate and a customized SOI wafer, wherein a cavity is formed in the customized SOI wafer, a sensitive film suspended on the cavity is arranged on the customized SOI wafer, and a four-flap beam film structure with an inwards concave edge formed by etching is arranged on the sensitive film;
the edge of the four-flap type beam film structure is provided with a piezoresistive region, and the side of the sensitive film is provided with a lead region;
the middle part of the silicon wafer supporting substrate is provided with an air hole, and the bottom of the silicon wafer supporting substrate is provided with a buffer groove.
In one alternative: the piezoresistive region includes a piezoresistive strip and an ohmic contact region.
In one alternative: the distance between the edge of the convex structure on the outer side of the buffer groove and the edge of the main body of the core body is more than 100um, the width of the convex structure is set to 100um, the center distance between the two convex structures is set to 250um, and the right-angle turning part of the buffer groove is treated by adopting a round angle with the radius of 80 um.
In one alternative: the thickness of the customized SOI wafer device layer is 15um, and the resistivity is 1-10Ω cm and the thickness is 300um.
In one alternative: the lead area is prepared by adopting a Ti/Si-Al (Si-doped Al alloy) two-layer metal stack mode, the thickness of the Ti layer is 20-50nm, and the thickness of the Si-Al layer is 300-500nm.
In one alternative: the dimensions of the core body were 3.3x3.3mm.
Compared with the prior art, the utility model has the beneficial effects that:
the four-flap beam film structure design with the concave edge is adopted in the utility model, so that the stress concentration and uniformity of the piezoresistive region are increased;
the utility model adopts the customized SOI wafer with the cavity, thereby reducing the complexity of the preparation process;
the utility model adopts the silicon wafer, thereby greatly reducing the thermal stress brought by bonding other non-silicon-based materials;
the utility model has the range as low as 1kPa under the condition that the main size of the core body is 3.3 multiplied by 3.3mm (without scribing channels) and the sensitive film thickness is 15 um.
Drawings
Fig. 1 is a schematic structural view of a core body according to the present utility model.
Fig. 2 is a schematic view of the structure of the back surface of the core body in the present utility model.
FIG. 3 is a schematic cross-sectional view of a core body according to the present utility model.
Fig. 4 is an enlarged schematic view of the structure of fig. 3 a according to the present utility model.
Fig. 5 is a schematic cross-sectional view of an SOI wafer in a first fabrication step of the present utility model.
FIG. 6 is a schematic cross-sectional view of a second preparation step of the present utility model.
FIG. 7 is a schematic cross-sectional view of a third preparation step of the present utility model.
FIG. 8 is a schematic cross-sectional view of a fourth preparation step of the present utility model.
Fig. 9 is a schematic view of the four-lobe beam film structure of fig. 8 according to the present utility model.
FIG. 10 is a schematic cross-sectional view of a fifth step of the present utility model.
FIG. 11 is a schematic cross-sectional view of a sixth preparation step of the present utility model.
FIG. 12 is a schematic cross-sectional view of the seventh preparation step of the present utility model.
FIG. 13 is a schematic cross-sectional view of the eighth preparation step of the present utility model.
Fig. 14 is a schematic view showing the bonding of the core body and the substrate in the present utility model.
Fig. 15 is an enlarged schematic view of the structure of fig. 14B according to the present utility model.
In the figure: 1. a core body; 2. customized SOI wafers; 3. a silicon wafer support substrate; 4. a piezoresistive region; 41. a piezoresistive strip; 42. an ohmic contact region; 5. lead area: 51. a metal interconnect lead; 52. PAD area; 6. a four-lobe beam film structure; 7. a cavity; 8. a buffer tank; 9. air holes; 10. oxidizing the isolation layer; 11. a surface passivation layer; 12. an epoxy resin; 13. a substrate.
Detailed Description
Referring to fig. 1-4, in the present embodiment, an ultra-low pressure core with a stress buffer groove includes a core body 1 and a substrate 13 connected to the bottom of the core body 1, as shown in fig. 14;
the core body 1 comprises a silicon wafer supporting substrate 3 and a customized SOI wafer 2, wherein a cavity 7 is formed in the customized SOI wafer 2, a sensitive film suspended on the cavity 7 is arranged on the customized SOI wafer 2, and a four-flap-type beam film structure 6 with a concave edge formed by etching is arranged on the sensitive film; the concave edges help to increase stress concentration and uniformity of the piezoresistive region;
the edge of the four-flap type beam film structure 6 is provided with a piezoresistive region 4, and the side of the sensitive film is provided with a lead region 5;
the middle part of the silicon wafer supporting substrate 3 is provided with an air hole 9, and the bottom of the silicon wafer supporting substrate 3 is provided with a buffer groove 8.
In one embodiment, the piezoresistive region includes a piezoresistive strip 41 and an ohmic contact region 42; the piezoresistive strip 41 is manufactured by a lightly doped process of ion implantation; the ohmic contact region 42 is prepared by an ion implantation heavy doping process; the piezoresistive strips 41 are arranged in a stress concentration area of the sensitive film and connected in a wheatstone bridge mode, and are used for sensing electric signals generated by the compression of the sensitive film; also above the piezoresistive strip 41 is an oxide isolation layer 10, and the metal interconnect lead 51 connected to the piezoresistive strip 41 through the hole and the surface passivation layer 11 are referred to as fig. 14;
in one embodiment, the distance between the edge of the convex structure at the outer side of the buffer groove 8 and the edge of the core body 1 is more than 100um, the width of the convex structure is set to be 100um, the center distance between the two convex structures is set to be 250um, and the right-angle turning part of the buffer groove 8 is treated by adopting a round angle with the radius of 80 um; the depth of the structure can be determined according to the thickness of the adhesive during the surface mounting, and the depth is slightly larger than the thickness of the adhesive.
In one embodiment, the custom SOI wafer 2 device layer thickness is 15um, and the resistivity is 1-10Ω cm 300um thick.
In one embodiment, the lead region 5 is prepared in the form of a two-layer metal stack of Ti/Si-Al (Si-doped Al alloy), the Ti layer being 20-50nm thick and the Si-Al layer being 300-500nm thick.
In one embodiment, the core body has dimensions of 3.3 x 3.3mm.
In one embodiment, the piezoresistive strip 41 in the central region of the boundary of the sensing diaphragm may have different configurations, and may be folded in two-section type piezoresistive strip in both the transverse direction and the longitudinal direction, or folded in two-section type piezoresistive strip in one-section type in the transverse direction.
In one embodiment, the lateral and longitudinal piezoresistive strips may be disposed entirely within the sensitive film region, or, depending on other requirements or constraints, the lateral piezoresistive strips extend 5-10um beyond the sensitive film boundary, the longitudinal piezoresistive strips being disposed entirely within the sensitive film;
in order to improve the temperature coefficient of the piezoresistive strip, the doping concentration of the piezoresistive region 4 is preferably 3.10 18 [1/cm 3 ]To ensure good electrical contact between the piezoresistive strip and the metal, the doping concentration of the heavily doped region reaches 1.10 20 [/cm 3 ]Is of the order of magnitude of (2);
according to the ultra-low pressure core with the stress buffer groove, the sensitive film of the core is deformed under the action of external air pressure, the piezoresistor strips on the ultra-low pressure core are deformed, the resistance value of the piezoresistor strips is changed due to the piezoresistance effect, the energized piezoresistor strips can have voltage or current output corresponding to pressure, the piezoresistor strips 41 on four sides of the edge of the sensitive film are arranged in a Wheatstone bridge configuration according to the output measurement pressure, compared with a half-arm bridge configuration, the Wheatstone configuration can compensate partial thermal drift and improve the linearity of the output, the design of the four-flap type beam film structure 6 with the concave edge on the sensitive film layer can increase the concentration and uniformity of stress of the piezoresistor area 4 and improve the sensitivity and the linearity of the output, and in addition, the pressure sensing core is prepared by adopting a customized SOI wafer, so that the preparation process difficulty is reduced, and the preparation cost is reduced.
Referring to fig. 5-15, a method for preparing an ultra-low pressure core with stress buffer grooves, comprising the steps of:
step one, cleaning a customized SOI wafer 2 by adopting a standard silicon wafer cleaning process;
depositing a layer of silicon oxide on the surface of the customized SOI wafer 2 by utilizing a thermal oxidation process, preparing an ohmic contact area 42 and a piezoresistive strip 41 on a monocrystalline silicon wafer pressure sensitive film by utilizing a thick boron doping process and a thin boron doping process, and repairing lattice damage caused by injection by adopting an annealing process after injection is finished;
etching the implantation masking layer on the sensitive film layer by using an etching process, and depositing a shape oxidation isolation layer 10 on the monocrystalline silicon pressure sensitive film by using an MEMS film deposition process, wherein the thickness is 450nm; and an electrical contact hole of the piezoresistive strip 41 is formed on the oxidation isolation layer 10 by using an etching process; depositing a Ti/Si-Al metal film on the insulating layer by using a MEMS film deposition process, patterning and then etching to form a metal interconnection lead 51, and then using an annealing process to ensure the formation of an ohmic contact region 42 between the piezoresistive strip 41 and the metal layer;
etching a four-flap beam film structure 6 with an inward-concave edge on the front surface of the sensitive film layer through an etching process after the patterning process;
depositing a surface passivation layer 11 on the upper layer of the patterned metal interconnection lead 51 by using a MEMS film deposition process, wherein the thickness of the surface passivation layer is about 500nm;
step six, opening contact holes for wiring between the PAD area 52 of the four patterned metal interconnection leads 51 and the outside on the surface passivation layer 11 by utilizing an etching process;
step seven, bonding a silicon wafer support substrate 3 on the customized SOI wafer 2 after the step six by utilizing a bonding process, and etching a stress buffer groove structure, namely a buffer groove 8, on the back surface;
and step eight, etching the air inlet hole 9 from the back surface by using an etching process.
And step nine, bonding a substrate 13 on the bottom of the core body 1 processed in step eight through epoxy resin (or silica gel), wherein the substrate 13 can be a plastic substrate, a PCB substrate or a ceramic substrate.
In one alternative: in the second step, ohmic contact areas and piezoresistive strips 41 are prepared on the monocrystalline silicon wafer pressure sensitive film by utilizing the thick boron doping and the thin boron doping processes, and according to the process conditions, the thick boron doping process can be omitted, and the piezoresistive strip 41 areas are directly interconnected with metal leads.
In one alternative: the MEMS film deposition process in the third and fifth steps is a sputtering deposition process or an electron beam evaporation deposition process or a heating evaporation deposition process, and Si-Al can be Al or Au.
In one alternative: the etching process in the step six, the step seven and the step eight is a dry ion etching process or a vapor phase etching process or a wet corrosion process, and the bonding process in the step seven is a fusion bonding process.
Claims (5)
1. An ultra-low pressure core body with a stress buffer groove comprises a core body (1) and a base plate (13) connected to the bottom of the core body (1);
the method is characterized in that: the core body (1) comprises a silicon wafer supporting substrate (3) and a customized SOI wafer (2), wherein a cavity (7) is formed in the customized SOI wafer (2), a sensitive film suspended on the cavity (7) is arranged on the customized SOI wafer (2), and a four-flap beam film structure (6) with a concave edge formed by etching is arranged on the sensitive film;
the edge of the four-flap type beam film structure (6) is provided with a piezoresistive region (4), and the side of the sensitive film is provided with a lead region (5);
the middle part of the silicon wafer supporting substrate (3) is provided with an air hole (9), and the bottom of the silicon wafer supporting substrate (3) is provided with a buffer groove (8).
2. An ultra low pressure core with stress buffer tank as claimed in claim 1, wherein: the piezoresistive region (4) comprises a piezoresistive strip (41) and an ohmic contact region (42).
3. An ultra low pressure core with stress buffer tank as claimed in claim 1, wherein: the distance between the edge of the convex structure at the outer side of the buffer groove (8) and the edge of the core body main body (1) is more than 100um, the width of the convex structure is set to be 100um, the center distance between the two convex structures is set to be 250um, and the right-angle turning part of the buffer groove (8) is treated by adopting a round corner with the radius of 80 um.
4. An ultra low pressure core with stress buffer tank as claimed in claim 1, wherein: the thickness of the device layer of the customized SOI wafer (2) is 15um, and the resistivity is 1-10Ω cm and the thickness is 300um.
5. An ultra low pressure core with stress buffer tank as claimed in claim 1, wherein: the core body (1) has dimensions of 3.3X3.3 mm.
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| CN115876378A (en) * | 2022-12-16 | 2023-03-31 | 明石创新(烟台)微纳传感技术研究院有限公司 | Ultralow-pressure core body with stress buffer groove and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115876378A (en) * | 2022-12-16 | 2023-03-31 | 明石创新(烟台)微纳传感技术研究院有限公司 | Ultralow-pressure core body with stress buffer groove and preparation method thereof |
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