CN118173672B - MicroLED flexible display screen preparation monitoring method - Google Patents
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Abstract
本发明公开了一种MicroLED柔性显示屏制备监测方法,涉及显示屏制备技术领域;本发明通过对MicroLED阵列在通电检查测试时间段内的的电压估值、差异估值、预期漏电电流以及极端漏电电流进行综合分析得到修复评估指数,为MicroLED阵列的修复和优化提供了一个综合的评估指标,进一步计算修复差值并将其与设定的差值取值范围匹配,可以快速确定每个MicroLED阵列的修复等级,从而将其送往最合适的修复车间,提高了制备得到效率和智能化程度。
The present invention discloses a method for monitoring the preparation of a MicroLED flexible display screen, and relates to the technical field of display screen preparation. The present invention obtains a repair evaluation index by comprehensively analyzing the voltage estimation, difference estimation, expected leakage current, and extreme leakage current of a MicroLED array during a power-on inspection test period, thereby providing a comprehensive evaluation index for the repair and optimization of the MicroLED array. The repair difference is further calculated and matched with a set difference value range, so that the repair level of each MicroLED array can be quickly determined, thereby sending it to the most suitable repair workshop, thereby improving the preparation efficiency and intelligence.
Description
技术领域Technical Field
本发明涉及显示屏制备技术领域,特别涉及一种MicroLED柔性显示屏制备监测方法。The present invention relates to the technical field of display screen preparation, and in particular to a method for monitoring the preparation of a MicroLED flexible display screen.
背景技术Background Art
MicroLED显示技术具有发光效率高、色域宽以及寿命长等优点,广泛用于大屏幕和高亮度信息显示;在Micro LED柔性显示屏进行制备过程中,需要在阵列经通电检查修复后,采用注模方法将阵列浸泡到透明硅胶、树脂或者透明聚酰亚胺等胶体材料中,胶体固化后将像素和导线固定形成薄膜结构柔性显示屏体。MicroLED display technology has the advantages of high luminous efficiency, wide color gamut and long life, and is widely used in large-screen and high-brightness information display. In the preparation process of Micro LED flexible display screens, after the array is powered on, inspected and repaired, the array needs to be immersed in transparent silicone, resin or transparent polyimide and other colloid materials by injection molding. After the colloid is cured, the pixels and wires are fixed to form a thin-film structure flexible display screen.
但上述制备过程中还存在以下不足:However, there are still the following deficiencies in the above-mentioned preparation process:
不能根据阵列通电检查的结果将阵列分为不同的修复等级,并将其分送至对应的车间进行修复,都是将问题产品直接输送至人工处进行分选,智能化程度较低的同时影响柔性显示屏的制备效率;The arrays cannot be classified into different repair levels according to the results of the array power-on inspection and sent to the corresponding workshops for repair. The defective products are directly sent to manual sorting, which has a low degree of intelligence and affects the production efficiency of flexible displays.
阵列浸泡到胶体材料进行固化的过程中,不能对固化的过程进行监测和调节,导致注模的质量得不到保证,出现气泡和缺陷,影响产品最终的质量。During the process of the array being immersed in the colloidal material for curing, the curing process cannot be monitored and adjusted, resulting in the quality of the injection molding not being guaranteed, bubbles and defects appearing, and affecting the final quality of the product.
为此,推出一种MicroLED柔性显示屏制备监测方法。To this end, a method for monitoring the preparation of a MicroLED flexible display screen is introduced.
发明内容Summary of the invention
有鉴于此,本发明提供一种MicroLED柔性显示屏制备监测方法,以解决上述背景技术提出的问题。In view of this, the present invention provides a method for preparing and monitoring a MicroLED flexible display screen to solve the problems raised by the above-mentioned background technology.
本发明的目的可以通过以下技术方案实现:一种MicroLED柔性显示屏制备监测方法,包括:The object of the present invention can be achieved by the following technical solution: A method for preparing and monitoring a MicroLED flexible display screen, comprising:
步骤一:制备MicroLED阵列,采用自动化检测设备对每个MicroLED阵列进行通电检查,并记录相关参数进行分析,得到对应MicroLED阵列的修复评估指数α;Step 1: Prepare a MicroLED array, use automated testing equipment to power on each MicroLED array, and record relevant parameters for analysis to obtain a repair assessment index α of the corresponding MicroLED array;
步骤二:基于制备的质量标准,设定修复评估指数α的参考阈值,根据对应MicroLED阵列修复评估指数α的比对结果,将对应MicroLED阵列输送至对应车间;Step 2: Based on the quality standard of the preparation, a reference threshold of the repair evaluation index α is set, and according to the comparison result of the corresponding MicroLED array repair evaluation index α, the corresponding MicroLED array is transported to the corresponding workshop;
步骤三:选取胶体材料后,将对应MicroLED阵列浸泡到选取的胶体材料中,基于胶体材料的特性,设定MicroLED阵列的固化时间段,并实时监测固化过程,在到达设定固化时间段中间点时,对中间点前监测时间段内固化过程的参数变化进行分析,得到优化调节指数β;Step 3: After selecting the colloid material, immerse the corresponding MicroLED array in the selected colloid material, set the curing time period of the MicroLED array based on the characteristics of the colloid material, and monitor the curing process in real time. When the midpoint of the set curing time period is reached, analyze the parameter changes of the curing process in the monitoring time period before the midpoint to obtain the optimized adjustment index β;
步骤四:基于对应MicroLED阵列在中间点前监测时间段内的优化调节指数β,将得到的优化调节指数β与设定的参考阈值进行比对,若大于设定的参考阈值,则触发预警信令,暂停MicroLED阵列的固化,并将触发的预警信令以及优化调节指数β发送至管理人员的移动终端内,管理人员在接收到预警信令后,基于优化调节指数β对加热元件和压力控制系统进行远程调节,调节后,对MicroLED阵列基于中间点剩余固化时间段继续进行固化;Step 4: Based on the optimization adjustment index β of the corresponding MicroLED array in the monitoring time period before the midpoint, the obtained optimization adjustment index β is compared with the set reference threshold. If it is greater than the set reference threshold, the warning signal is triggered to suspend the curing of the MicroLED array, and the triggered warning signal and the optimization adjustment index β are sent to the mobile terminal of the manager. After receiving the warning signal, the manager remotely adjusts the heating element and the pressure control system based on the optimization adjustment index β. After the adjustment, the MicroLED array continues to be cured based on the remaining curing time period of the midpoint;
步骤五:胶体固化完成后,对显示屏进行一系列的预处理步骤,形成薄膜结构的柔性显示屏体,并进行后续的测试和检查。Step 5: After the colloid is cured, the display screen undergoes a series of pretreatment steps to form a flexible display screen body with a thin film structure, and then undergoes subsequent testing and inspection.
在一些实施例中,得到修复评估指数α的具体过程为:In some embodiments, the specific process of obtaining the repair assessment index α is:
设定通电检查的测试时间段,获取测试时间段内MicroLED阵列在正常工作条件下的正向电压变化情况,提取测试时间段内各时间点的正向电压,利用标准差公式对各时间点的正向电压进行计算,得到MicroLED阵列的电压变值,同时提取各时间点正向电压中的最高正向电压和最低正向电压,对两者进行差值的计算,作为MicroLED阵列的电压差值;Set a test time period for power-on inspection, obtain the change of the forward voltage of the MicroLED array under normal working conditions during the test time period, extract the forward voltage at each time point during the test time period, calculate the forward voltage at each time point using the standard deviation formula, and obtain the voltage change value of the MicroLED array. At the same time, extract the highest forward voltage and the lowest forward voltage at each time point, calculate the difference between the two, and use it as the voltage difference value of the MicroLED array;
设定MicroLED阵列电压变值和电压差值的权重系数,将MicroLED阵列的电压变值和电压差值分别与对应的权重系数相乘,然后将相乘的结果求和,作为MicroLED阵列的电压估值Da;Setting weight coefficients of the voltage change value and the voltage difference value of the MicroLED array, multiplying the voltage change value and the voltage difference value of the MicroLED array by the corresponding weight coefficients respectively, and then summing the multiplication results as the voltage estimation Da of the MicroLED array;
获取测试时间段内MicroLED阵列在不同电压下的电流值,同时测量MicroLED阵列电极的有效面积,将获取的电流值与有效面积通过公式J=K/A进行计算,得到电流密度;其中K是电流值,A是电极的有效面积;Obtain the current value of the MicroLED array at different voltages during the test period, and measure the effective area of the MicroLED array electrode at the same time, and calculate the current value and the effective area using the formula J=K/A to obtain the current density, where K is the current value and A is the effective area of the electrode;
测量MicroLED阵列在不同电流密度下的亮度和发光面积,将亮度乘以发光面积,得到光通量,对得到的光通量进行转换,得到MicroLED阵列的发光功率并记为;The brightness and luminous area of the MicroLED array at different current densities are measured, and the luminous flux is obtained by multiplying the brightness by the luminous area. The obtained luminous flux is converted to obtain the luminous power of the MicroLED array and recorded as ;
并通过公式计算MicroLED阵列的电功率;其中V为具体施加的电压;And through the formula Calculating the Electrical Power of MicroLED Arrays ; Where V is the specific applied voltage;
通过进行计算,得到MicroLED阵列在不同电流密度下的发光效率,利用标准差公式对不同电流密度下的发光效率进行计算,将计算的值作为MicroLED阵列的差异估值Db;pass Calculate and obtain the luminous efficiency of the MicroLED array at different current densities , using the standard deviation formula to calculate the luminous efficiency at different current densities Perform calculation and use the calculated value as the difference estimate Db of the MicroLED array;
对测试时间段内MicroLED阵列施加设定的反向偏压,设定的反向偏压包括预期反向偏压和极端反向偏压,并在每个施加的反向偏压下,测量通过MicroLED阵列的反向漏电电流并进行记录,将预期反向偏压和极端反向偏压下的漏电电流值分别标记为Dc和Ds;Apply a set reverse bias voltage to the MicroLED array during the test period, where the set reverse bias voltage includes an expected reverse bias voltage and an extreme reverse bias voltage, and measure and record the reverse leakage current through the MicroLED array at each applied reverse bias voltage, marking the leakage current values at the expected reverse bias voltage and the extreme reverse bias voltage as Dc and Ds, respectively;
将MicroLED阵列在通电检查测试时间段内的电压估值Da、差异估值Db、预期漏电电流Dc以及极端漏电电流Ds代入公式,进行加权计算得到对应MicroLED阵列的修复评估指数α;其中、、以及分别表示允许最大电压估值、允许最大差异估值、允许最高预期漏电电流以及允许最高极端漏电电流;ea1、ea2、ea3以及ea4分别为电压估值Da、差异估值Db、预期漏电电流Dc以及极端漏电电流Ds的影响权重因子。Substitute the voltage estimate Da, difference estimate Db, expected leakage current Dc and extreme leakage current Ds of the MicroLED array during the power-on test period into the formula , weighted calculation is performed to obtain the repair evaluation index α of the corresponding MicroLED array; , , as well as They respectively represent the maximum allowable voltage estimation, the maximum allowable difference estimation, the maximum allowable expected leakage current and the maximum allowable extreme leakage current; ea1, ea2, ea3 and ea4 are the influence weight factors of the voltage estimation Da, the difference estimation Db, the expected leakage current Dc and the extreme leakage current Ds.
在一些实施例中,根据对应MicroLED阵列修复评估指数α的比对结果,将对应MicroLED阵列输送至对应车间,具体为:In some embodiments, according to the comparison result of the corresponding MicroLED array repair assessment index α, the corresponding MicroLED array is transported to the corresponding workshop, specifically:
将MicroLED阵列的修复评估指数α与设定的参考阈值进行比对,若小于设定的参考阈值,则生成输送至固化车间进行固化工序;若大于设定的参考阈值,则生成修复信令,计算修复评估指数α与参考阈值之间的差值,并将计算的差值记为修复差值,设定修复差值对应的各差值取值范围,每个差值取值范围分别对应一个修复等级,将MicroLED阵列的修复差值与设定的各差值取值范围进行匹配,得到MicroLED阵列的修复等级;修复等级分为一般修复等级、中等修复等级以及严重修复等级;设定一般修复、中等修复以及严重修复分别对应一般修复车间、中等修复车间以及严重修复车间;The repair evaluation index α of the MicroLED array is compared with the set reference threshold. If it is less than the set reference threshold, it is sent to the curing workshop for curing process; if it is greater than the set reference threshold, a repair signal is generated, the difference between the repair evaluation index α and the reference threshold is calculated, and the calculated difference is recorded as the repair difference, and the difference value ranges corresponding to the repair difference are set. Each difference value range corresponds to a repair level, and the repair difference of the MicroLED array is matched with the set difference value ranges to obtain the repair level of the MicroLED array; the repair level is divided into general repair level, medium repair level and severe repair level; set general repair, medium repair and severe repair to correspond to general repair workshop, medium repair workshop and severe repair workshop respectively;
基于MicroLED阵列的修复等级,将MicroLED阵列输送至对应的修复车间。Based on the repair level of the MicroLED array, the MicroLED array is transported to the corresponding repair workshop.
在一些实施例中,根据对应MicroLED阵列修复评估指数α的比对结果,将对应MicroLED阵列输送至对应车间,还包括:In some embodiments, according to the comparison result of the corresponding MicroLED array repair assessment index α, the corresponding MicroLED array is transported to the corresponding workshop, further comprising:
输送的过程中获取对应修复车间的待修复数量,设定待修复数量的参考值,若对应修复车间的待修复数量大于设定的参考值,则生成输送优化信令,获取对应修复车间外其他两个修复车间的待修复数量,若均大于对应修复车间的待修复数量,则继续将MicroLED阵列输送至对应的修复车间;During the transportation process, the number of cells to be repaired in the corresponding repair workshop is obtained, and a reference value of the number of cells to be repaired is set. If the number of cells to be repaired in the corresponding repair workshop is greater than the set reference value, a transportation optimization signaling is generated to obtain the number of cells to be repaired in the other two repair workshops outside the corresponding repair workshop. If both are greater than the number of cells to be repaired in the corresponding repair workshop, the MicroLED array continues to be transported to the corresponding repair workshop.
若小于对应修复车间的待修复数量,则分别获取对应修复车间与其他两个修复车间之间的输送距离,设定待修复数量和输送距离所对应的权重系数,分别将其他两个修复车间的待修复数量和输送距离与对应的权重系数进行相乘,然后求和得到结果一;基于一般修复车间、中等修复车间以及严重修复车间预设的使用优先系数;将其他两个修复车间的结果一与对应的使用优先系数进行相乘计算,得到其他两个修复车间的优选评值,将优选评值最小的修复车间作为MicroLED阵列的目标修复车间,对MicroLED阵列进行标记后改变输送路径至目标修复车间,同时目标修复车间的待修复数量加一。If it is less than the number of items to be repaired in the corresponding repair workshop, the transportation distances between the corresponding repair workshop and the other two repair workshops are obtained respectively, and the weight coefficients corresponding to the number of items to be repaired and the transportation distances are set. The number of items to be repaired and the transportation distances of the other two repair workshops are multiplied by the corresponding weight coefficients respectively, and then the result is summed up to obtain result one; based on the preset usage priority coefficients of the general repair workshop, the medium repair workshop and the serious repair workshop; the result one of the other two repair workshops is multiplied by the corresponding usage priority coefficients to obtain the preferred evaluation values of the other two repair workshops, and the repair workshop with the smallest preferred evaluation value is used as the target repair workshop for the MicroLED array. After marking the MicroLED array, the transportation path is changed to the target repair workshop, and the number of items to be repaired in the target repair workshop is increased by one.
在一些实施例中,对中间点前监测时间段内固化过程的参数变化进行分析,具体为:In some embodiments, the parameter changes of the curing process during the monitoring period before the intermediate point are analyzed, specifically:
获取中间点前监测时间段内各时间点的固化区域温度值并代入温度图形内表示,绘制各时间点固化区域温度值对应在温度图形内的数值点,基于预设的参考温度变化范围,绘制参考温度变化范围对应在温度图形内的参考区域,统计温度图形内处于参考区域外的数值点数量,作为异常温数并记为Fa,同时以处于参考区域外的各数值点为基准点,以距离最近的参考区域线为目标点作垂线,计算各垂线的长度并进行累加,得到异常温值并记为Fb;利用标准差公式对各时间点的固化区域温度值进行计算,得到温变异值并记为Fc;Obtain the temperature value of the curing area at each time point in the monitoring period before the middle point and substitute it into the temperature graph for representation, draw the numerical point in the temperature graph corresponding to the temperature value of the curing area at each time point, draw the reference area in the temperature graph corresponding to the reference temperature change range based on the preset reference temperature change range, count the number of numerical points outside the reference area in the temperature graph as the abnormal temperature number and record it as Fa, and at the same time, use each numerical point outside the reference area as the reference point, and use the nearest reference area line as the target point to draw a vertical line, calculate the length of each vertical line and accumulate them, and obtain the abnormal temperature value and record it as Fb; use the standard deviation formula to calculate the temperature value of the curing area at each time point, and obtain the temperature variation value and record it as Fc;
基于上述步骤,获取中间点前监测时间段内各时间点的胶体材料内部的压力值并代入压力图形内表示,得到监测时间段内压力变化所对应的异常压数Ha、异常压值Hb以及压变异值Hc。Based on the above steps, the pressure value inside the colloidal material at each time point in the monitoring period before the middle point is obtained and substituted into the pressure graph to represent the abnormal pressure number Ha, abnormal pressure value Hb and pressure variation value Hc corresponding to the pressure change in the monitoring period are obtained.
在一些实施例中,得到优化调节指数β的具体步骤为:依据公式进行加权计算,得到MicroLED阵列的优化调节指数β;其中ra1、ra2以及ra3分别为异常温数Fa、异常温值Fb以及温变异值Fc的影响权重因子;ry1、ry2以及ry3分别为异常压数Ha、异常压值Hb以及压变异值Hc的影响权重因子;In some embodiments, the specific steps of obtaining the optimized adjustment index β are: according to the formula Perform weighted calculation to obtain the optimization adjustment index β of the MicroLED array; ra1, ra2 and ra3 are the influence weight factors of the abnormal temperature number Fa, abnormal temperature value Fb and temperature variation value Fc respectively; ry1, ry2 and ry3 are the influence weight factors of the abnormal pressure number Ha, abnormal pressure value Hb and pressure variation value Hc respectively;
其中Gt和Gk分别表示MicroLED阵列固定过程中的固温值和固压值,和分别表示固温值和固压值的最大允许值;m1和m2分别为固温值Gt和固压值Gk的影响权重因子。Where Gt and Gk represent the fixing temperature and pressure of the MicroLED array during the fixing process, respectively. and They represent the maximum allowable values of solid temperature and solid pressure respectively; m1 and m2 are the influencing weight factors of solid temperature Gt and solid pressure Gk respectively.
与现有技术相比,本发明的有益效果是:Compared with the prior art, the present invention has the following beneficial effects:
本发明通过对MicroLED阵列在通电检查测试时间段内的电压估值、差异估值、预期漏电电流以及极端漏电电流进行综合分析得到修复评估指数,为MicroLED阵列的修复和优化提供了一个综合的评估指标,进一步计算修复差值并将其与设定的差值取值范围匹配,可以快速确定每个MicroLED阵列的修复等级,从而将其送往最合适的修复车间,提高了制备得到效率和智能化程度;The present invention obtains a repair evaluation index by comprehensively analyzing the voltage estimation, difference estimation, expected leakage current and extreme leakage current of the MicroLED array during the power-on inspection test period, thereby providing a comprehensive evaluation index for the repair and optimization of the MicroLED array. The repair difference is further calculated and matched with the set difference value range, so that the repair level of each MicroLED array can be quickly determined, so that it can be sent to the most suitable repair workshop, thereby improving the preparation efficiency and intelligence.
本发明通过生成输送优化信令并考虑其他车间的待修复数量和输送距离,可以避免修复和制备延误;The present invention can avoid repair and preparation delays by generating transport optimization signaling and taking into account the number of repairs to be made and the transport distance in other workshops;
本发明通过在固化过程中实时监测温度和压力,并在固化时间段中间点进行参数分析得到优化调节指数,进一步通过比对优化调节指数和参考阈值,能够实时识别固化过程中的异常情况,及时触发预警,防止潜在的质量问题,确保了固化质量。The present invention monitors the temperature and pressure in real time during the curing process, performs parameter analysis at the middle point of the curing time period to obtain an optimized adjustment index, and further compares the optimized adjustment index with a reference threshold to identify abnormal conditions in the curing process in real time, trigger early warnings in time, prevent potential quality problems, and ensure the curing quality.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
在下面结合附图对于示例性实施例的描述中,本申请的更多细节、特征和优点被公开,在附图中:Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:
图1为本发明的流程图;Fig. 1 is a flow chart of the present invention;
图2为本发明中构建的温度图形。FIG. 2 is a temperature graph constructed in the present invention.
具体实施方式DETAILED DESCRIPTION
下面将参照附图更详细地描述本申请的若干个实施例以便使得本领域技术人员能够实现本申请。本申请可以体现为许多不同的形式和目的并且不应局限于本文所阐述的实施例。提供这些实施例以使得本申请全面且完整,并充分地向本领域技术人员传达本申请的范围。所述实施例并不限定本申请。Several embodiments of the present application will be described in more detail below with reference to the accompanying drawings so that those skilled in the art can implement the present application. The present application can be embodied in many different forms and purposes and should not be limited to the embodiments described herein. These embodiments are provided to make the present application comprehensive and complete, and to fully convey the scope of the present application to those skilled in the art. The embodiments do not limit the present application.
除非另有定义,本文中使用的所有术语(包括技术术语和科学术语)具有与本申请所属领域的普通技术人员所通常理解的相同含义。将进一步理解的是,诸如那些在通常使用的字典中定义的之类的术语应当被解释为具有与其在相关领域和/或本说明书上下文中的含义相一致的含义,并且将不在理想化或过于正式的意义上进行解释,除非本文中明确地如此定义。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this application belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the relevant art and/or the context of this specification, and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.
请参阅图1-图2所示,一种MicroLED柔性显示屏制备监测方法,包括:Referring to FIG. 1 and FIG. 2 , a method for preparing and monitoring a MicroLED flexible display screen includes:
步骤一:制备MicroLED阵列;在制备Micro LED阵列的阶段,需要通过微加工技术在半导体基板上制作出大量的微型LED结构,微型LED结构将作为显示屏的发光单元;采用自动化检测设备对每个MicroLED阵列进行通电检查,并记录相关参数进行分析,得到对应MicroLED阵列的修复评估指数α;Step 1: Prepare MicroLED arrays. In the preparation of MicroLED arrays, a large number of microLED structures need to be produced on semiconductor substrates through micromachining technology. The microLED structures will serve as the light-emitting units of the display screen. Each MicroLED array is powered on and inspected using automated testing equipment. Related parameters are recorded for analysis to obtain the repair assessment index α of the corresponding MicroLED array.
得到修复评估指数α的具体过程为:The specific process of obtaining the repair evaluation index α is:
设定通电检查的测试时间段,获取测试时间段内MicroLED阵列在正常工作条件下的正向电压变化情况,提取测试时间段内各时间点的正向电压,利用标准差公式对各时间点的正向电压进行计算,得到MicroLED阵列的电压变值,同时提取各时间点正向电压中的最高正向电压和最低正向电压,对两者进行差值的计算,作为MicroLED阵列的电压差值;Set a test time period for power-on inspection, obtain the change of the forward voltage of the MicroLED array under normal working conditions during the test time period, extract the forward voltage at each time point during the test time period, calculate the forward voltage at each time point using the standard deviation formula, and obtain the voltage change value of the MicroLED array. At the same time, extract the highest forward voltage and the lowest forward voltage at each time point, calculate the difference between the two, and use it as the voltage difference value of the MicroLED array;
设定MicroLED阵列电压变值和电压差值的权重系数,将MicroLED阵列的电压变值和电压差值分别与对应的权重系数相乘,然后将相乘的结果求和,作为MicroLED阵列的电压估值Da;Setting weight coefficients of the voltage change value and the voltage difference value of the MicroLED array, multiplying the voltage change value and the voltage difference value of the MicroLED array by the corresponding weight coefficients respectively, and then summing the multiplication results as the voltage estimation Da of the MicroLED array;
需要说明的是,通过计算正向电压的标准差,可以评估MicroLED阵列在连续工作过程中的电压稳定性,较小的标准差值表明电压稳定性高,性能一致性好。It should be noted that by calculating the standard deviation of the forward voltage, the voltage stability of the MicroLED array during continuous operation can be evaluated. A smaller standard deviation value indicates high voltage stability and good performance consistency.
获取测试时间段内MicroLED阵列在不同电压下的电流值;将电流探头连接到MicroLED阵列的相应电极上,并逐渐增加电流;同时测量MicroLED阵列电极的有效面积,将获取的电流值与有效面积通过公式J=K/A进行计算,得到电流密度;其中K是电流值,A是电极的有效面积;Obtain the current value of the MicroLED array at different voltages during the test period; connect the current probe to the corresponding electrode of the MicroLED array and gradually increase the current; at the same time, measure the effective area of the MicroLED array electrode, and calculate the current value and the effective area using the formula J=K/A to obtain the current density; where K is the current value and A is the effective area of the electrode;
测量MicroLED阵列在不同电流密度下的亮度和发光面积;使用光度计测量MicroLED阵列的亮度;将亮度乘以发光面积,得到光通量,对得到的光通量进行转换,得到MicroLED阵列的发光功率并记为;通过设定的转换系数,将光通量与设定的转换系数相乘,得到发光功率;Measure the brightness and luminous area of the MicroLED array at different current densities; use a photometer to measure the brightness of the MicroLED array; multiply the brightness by the luminous area to obtain the luminous flux, convert the obtained luminous flux to obtain the luminous power of the MicroLED array and record it as ; Through the set conversion coefficient, the luminous flux is multiplied by the set conversion coefficient to obtain the luminous power;
并通过公式计算MicroLED阵列的电功率;其中V为具体施加的电压;And through the formula Calculating the Electrical Power of MicroLED Arrays ; Where V is the specific applied voltage;
通过进行计算,得到MicroLED阵列在不同电流密度下的发光效率,利用标准差公式对不同电流密度下的发光效率进行计算,将计算的值作为MicroLED阵列的差异估值Db;pass Calculate and obtain the luminous efficiency of the MicroLED array at different current densities , using the standard deviation formula to calculate the luminous efficiency at different current densities Perform calculation and use the calculated value as the difference estimate Db of the MicroLED array;
需要说明的是,利用标准差公式对各组发光效率进行计算,得到的值反映了发光效率的变化程度;标准差越大,意味着在不同电流密度下,发光效率的变化范围越大,表明MicroLED阵列的性能存在较大的不一致性。It should be noted that the standard deviation formula is used to calculate the luminous efficiency of each group, and the value obtained reflects the degree of variation in the luminous efficiency; the larger the standard deviation, the greater the range of variation in the luminous efficiency at different current densities, indicating that there is a large inconsistency in the performance of the MicroLED array.
对测试时间段内MicroLED阵列施加设定的反向偏压,设定的反向偏压包括预期反向偏压和极端反向偏压,并在每个施加的反向偏压下,测量通过MicroLED阵列的反向漏电电流并进行记录,将预期反向偏压和极端反向偏压下的漏电电流值分别标记为Dc和Ds;Apply a set reverse bias voltage to the MicroLED array during the test period, where the set reverse bias voltage includes an expected reverse bias voltage and an extreme reverse bias voltage, and measure and record the reverse leakage current through the MicroLED array at each applied reverse bias voltage, marking the leakage current values at the expected reverse bias voltage and the extreme reverse bias voltage as Dc and Ds, respectively;
需要说明的是,通过设定的预期反向偏压和极端反向偏压可以更加全面的反映出MicroLED阵列的不同条件下的性能表现。It should be noted that the performance of the MicroLED array under different conditions can be more comprehensively reflected by setting the expected reverse bias voltage and the extreme reverse bias voltage.
将MicroLED阵列在通电检查测试时间段内的电压估值Da、差异估值Db、预期漏电电流Dc以及极端漏电电流Ds代入公式,进行加权计算得到对应MicroLED阵列的修复评估指数α;其中、、以及分别表示允许最大电压估值、允许最大差异估值、允许最高预期漏电电流以及允许最高极端漏电电流;ea1、ea2、ea3以及ea4分别为电压估值Da、差异估值Db、预期漏电电流Dc以及极端漏电电流Ds的影响权重因子,且取值分别设置为1.172、1.165、1.163以及1.158;Substitute the voltage estimate Da, difference estimate Db, expected leakage current Dc and extreme leakage current Ds of the MicroLED array during the power-on test period into the formula , weighted calculation is performed to obtain the repair evaluation index α of the corresponding MicroLED array; , , as well as They represent the maximum allowable voltage estimate, the maximum allowable difference estimate, the maximum allowable expected leakage current, and the maximum allowable extreme leakage current respectively; ea1, ea2, ea3, and ea4 are the influence weight factors of the voltage estimate Da, the difference estimate Db, the expected leakage current Dc, and the extreme leakage current Ds, and their values are set to 1.172, 1.165, 1.163, and 1.158 respectively;
需要说明的是,通过对MicroLED阵列在通电检查测试时间段内的电压估值、差异估值、预期漏电电流以及极端漏电电流进行综合分析得到修复评估指数,为MicroLED阵列的修复和优化提供了一个综合的评估指标,便于后续的分送和管理。It should be noted that the repair evaluation index is obtained by comprehensively analyzing the voltage valuation, difference valuation, expected leakage current and extreme leakage current of the MicroLED array during the power-on inspection test period, which provides a comprehensive evaluation indicator for the repair and optimization of the MicroLED array, facilitating subsequent distribution and management.
步骤二:基于制备的质量标准,设定修复评估指数α的参考阈值,根据对应MicroLED阵列修复评估指数α的比对结果,将对应MicroLED阵列输送至对应车间;具体为:Step 2: Based on the quality standard of the preparation, a reference threshold of the repair evaluation index α is set, and according to the comparison result of the corresponding MicroLED array repair evaluation index α, the corresponding MicroLED array is transported to the corresponding workshop; specifically:
将MicroLED阵列的修复评估指数α与设定的参考阈值进行比对,若小于设定的参考阈值,则生成输送至固化车间进行固化工序;若大于设定的参考阈值,则生成修复信令,计算修复评估指数α与参考阈值之间的差值,并将计算的差值记为修复差值,设定修复差值对应的各差值取值范围,每个差值取值范围分别对应一个修复等级,将MicroLED阵列的修复差值与设定的各差值取值范围进行匹配,得到MicroLED阵列的修复等级;修复等级分为一般修复等级、中等修复等级以及严重修复等级;The repair evaluation index α of the MicroLED array is compared with the set reference threshold. If it is less than the set reference threshold, it is sent to the curing workshop for curing process; if it is greater than the set reference threshold, a repair signal is generated, the difference between the repair evaluation index α and the reference threshold is calculated, and the calculated difference is recorded as the repair difference. The difference value ranges corresponding to the repair difference are set, and each difference value range corresponds to a repair level. The repair difference of the MicroLED array is matched with the set difference value ranges to obtain the repair level of the MicroLED array; the repair level is divided into general repair level, medium repair level and severe repair level;
设定一般修复、中等修复以及严重修复分别对应一般修复车间、中等修复车间以及严重修复车间;Set general repair, medium repair and severe repair to correspond to general repair workshop, medium repair workshop and severe repair workshop respectively;
基于MicroLED阵列的修复等级,将MicroLED阵列输送至对应的修复车间,输送的过程中获取对应修复车间的待修复数量,设定待修复数量的参考值,若对应修复车间的待修复数量大于设定的参考值,则生成输送优化信令,获取对应修复车间外其他两个修复车间的待修复数量,若均大于对应修复车间的待修复数量,则继续将MicroLED阵列输送至对应的修复车间;Based on the repair level of the MicroLED array, the MicroLED array is transported to the corresponding repair workshop. During the transportation process, the number of LEDs to be repaired in the corresponding repair workshop is obtained, and a reference value of the number of LEDs to be repaired is set. If the number of LEDs to be repaired in the corresponding repair workshop is greater than the set reference value, a transport optimization signaling is generated to obtain the number of LEDs to be repaired in the other two repair workshops outside the corresponding repair workshop. If both are greater than the number of LEDs to be repaired in the corresponding repair workshop, the MicroLED array continues to be transported to the corresponding repair workshop.
若小于对应修复车间的待修复数量,则分别获取对应修复车间与其他两个修复车间之间的输送距离,设定待修复数量和输送距离所对应的权重系数,分别将其他两个修复车间的待修复数量和输送距离与对应的权重系数进行相乘,然后求和得到结果一;基于一般修复车间、中等修复车间以及严重修复车间预设的使用优先系数;严重修复车间的使用优先系数最大,一般修复车间的使用优先系数最小;将其他两个修复车间的结果一与对应的使用优先系数进行相乘计算,得到其他两个修复车间的优选评值,将优选评值最小的修复车间作为MicroLED阵列的目标修复车间,对MicroLED阵列进行标记后改变输送路径至目标修复车间,同时目标修复车间的待修复数量加一;If it is less than the number of items to be repaired in the corresponding repair workshop, the transportation distances between the corresponding repair workshop and the other two repair workshops are obtained respectively, and the weight coefficients corresponding to the number of items to be repaired and the transportation distances are set. The number of items to be repaired and the transportation distances of the other two repair workshops are multiplied by the corresponding weight coefficients respectively, and then the result is summed to obtain result one; based on the preset usage priority coefficients of the general repair workshop, the medium repair workshop and the serious repair workshop; the usage priority coefficient of the serious repair workshop is the largest, and the usage priority coefficient of the general repair workshop is the smallest; the result one of the other two repair workshops is multiplied by the corresponding usage priority coefficients to obtain the preferred evaluation values of the other two repair workshops, and the repair workshop with the smallest preferred evaluation value is used as the target repair workshop for the MicroLED array. After marking the MicroLED array, the transportation path is changed to the target repair workshop, and the number of items to be repaired in the target repair workshop is increased by one;
需要说明的是,通过计算修复差值并将其与设定的差值取值范围匹配,可以快速确定每个MicroLED阵列的修复等级,从而将其送往最合适的修复车间;通过生成输送优化信令并考虑其他车间的待修复数量和输送距离,可以避免修复和制备延误;根据实际情况灵活调整MicroLED阵列的输送路径,确保每个阵列都能在最短时间内得到修复,同时最大化修复车间的使用效率。It should be noted that by calculating the repair difference and matching it with the set difference value range, the repair level of each MicroLED array can be quickly determined so that it can be sent to the most suitable repair workshop; by generating transport optimization signaling and considering the number of repairs to be made and the transport distance of other workshops, repair and preparation delays can be avoided; the transport path of the MicroLED array can be flexibly adjusted according to actual conditions to ensure that each array can be repaired in the shortest time possible, while maximizing the utilization efficiency of the repair workshop.
步骤三:选取胶体材料后,将对应MicroLED阵列浸泡到选取的胶体材料中,基于胶体材料的特性,设定MicroLED阵列的固化时间段,并实时监测固化过程,在到达设定固化时间段中间点时,对中间点前监测时间段内固化过程的参数变化进行分析,得到优化调节指数β;Step 3: After selecting the colloid material, immerse the corresponding MicroLED array in the selected colloid material, set the curing time period of the MicroLED array based on the characteristics of the colloid material, and monitor the curing process in real time. When the midpoint of the set curing time period is reached, analyze the parameter changes of the curing process in the monitoring time period before the midpoint to obtain the optimized adjustment index β;
得到优化调节指数β的具体步骤为:The specific steps to obtain the optimized adjustment index β are:
S1:获取中间点前监测时间段内各时间点的固化区域温度值并代入温度图形内表示;利用温度传感器进行检测;绘制各时间点固化区域温度值对应在温度图形内的数值点,基于预设的参考温度变化范围,绘制参考温度变化范围对应在温度图形内的参考区域,统计温度图形内处于参考区域外的数值点数量,作为异常温数并记为Fa,同时以处于参考区域外的各数值点为基准点,以距离最近的参考区域线为目标点作垂线,计算各垂线的长度并进行累加,得到异常温值并记为Fb;S1: Obtain the temperature value of the curing area at each time point in the monitoring time period before the middle point and substitute it into the temperature graph for representation; use the temperature sensor for detection; draw the numerical points corresponding to the temperature value of the curing area at each time point in the temperature graph, and based on the preset reference temperature change range, draw the reference area in the temperature graph corresponding to the reference temperature change range, and count the number of numerical points outside the reference area in the temperature graph as the abnormal temperature number and record it as Fa. At the same time, use each numerical point outside the reference area as the reference point, and draw a vertical line with the nearest reference area line as the target point, calculate the length of each vertical line and accumulate them, and obtain the abnormal temperature value and record it as Fb;
利用标准差公式对各时间点的固化区域温度值进行计算,得到温变异值并记为Fc;The temperature value of the curing area at each time point is calculated using the standard deviation formula to obtain the temperature variation value and record it as Fc;
S2:基于步骤S1,获取中间点前监测时间段内各时间点的胶体材料内部的压力值并代入压力图形内表示,得到监测时间段内压力变化所对应的异常压数Ha、异常压值Hb以及压变异值Hc;S2: Based on step S1, the pressure value inside the colloidal material at each time point in the monitoring time period before the middle point is obtained and substituted into the pressure graph to represent it, and the abnormal pressure number Ha, abnormal pressure value Hb and pressure variation value Hc corresponding to the pressure change in the monitoring time period are obtained;
S3:依据公式进行加权计算,得到MicroLED阵列的优化调节指数β;其中ra1、ra2以及ra3分别为异常温数Fa、异常温值Fb以及温变异值Fc的影响权重因子,且取值分别设置为1.124、1.127以及1.129;ry1、ry2以及ry3分别为异常压数Ha、异常压值Hb以及压变异值Hc的影响权重因子,且取值分别设置为1.135、1.138以及1.142;S3: According to the formula A weighted calculation is performed to obtain the optimized adjustment index β of the MicroLED array; wherein ra1, ra2 and ra3 are the influence weight factors of the abnormal temperature number Fa, the abnormal temperature value Fb and the temperature variation value Fc, and the values are set to 1.124, 1.127 and 1.129 respectively; ry1, ry2 and ry3 are the influence weight factors of the abnormal pressure number Ha, the abnormal pressure value Hb and the pressure variation value Hc, and the values are set to 1.135, 1.138 and 1.142 respectively;
其中Gt和Gk分别表示MicroLED阵列固定过程中的固温值和固压值,和分别表示固温值和固压值的最大允许值;m1和m2分别为固温值Gt和固压值Gk的影响权重因子,且取值分别设置为1.548和1.562;Where Gt and Gk represent the fixing temperature and pressure of the MicroLED array during the fixing process, respectively. and They represent the maximum allowable values of the solid temperature value and the solid pressure value respectively; m1 and m2 are the influence weight factors of the solid temperature value Gt and the solid pressure value Gk respectively, and their values are set to 1.548 and 1.562 respectively;
需要说明的是,通过计算的优化调节指数提供了一个量化的指标,用于评估固化过程中的实际参数与预设参考值之间的偏差,并进行必要的参数调整,保证了MicroLED柔性显示屏的制备质量。It should be noted that the calculated optimization adjustment index provides a quantitative indicator for evaluating the deviation between the actual parameters in the curing process and the preset reference values, and making necessary parameter adjustments to ensure the preparation quality of the MicroLED flexible display.
步骤四:基于对应MicroLED阵列在中间点前监测时间段内的优化调节指数β,将得到的优化调节指数β与设定的参考阈值进行比对,若大于设定的参考阈值,则触发预警信令,暂停MicroLED阵列的固化,并将触发的预警信令以及优化调节指数β发送至管理人员的移动终端内,管理人员在接收到预警信令后,基于优化调节指数β对加热元件和压力控制系统进行远程调节,调节后,对MicroLED阵列基于中间点剩余固化时间段继续进行固化;Step 4: Based on the optimization adjustment index β of the corresponding MicroLED array in the monitoring time period before the midpoint, the obtained optimization adjustment index β is compared with the set reference threshold. If it is greater than the set reference threshold, the warning signal is triggered to suspend the curing of the MicroLED array, and the triggered warning signal and the optimization adjustment index β are sent to the mobile terminal of the manager. After receiving the warning signal, the manager remotely adjusts the heating element and the pressure control system based on the optimization adjustment index β. After the adjustment, the MicroLED array continues to be cured based on the remaining curing time period of the midpoint;
需要说明的是,通过比对优化调节指数和参考阈值,能够实时识别固化过程中的异常情况,及时触发预警,防止潜在的质量问题;管理人员可以远程调节加热元件和压力控制系统,无需现场干预,这样可以快速响应并解决固化过程中的问题,提高生产效率和制备的质量;通过及时调整固化参数,确保了MicroLED阵列的固化质量,有助于提升最终产品的可靠性和性能。It should be noted that by comparing the optimized adjustment index and the reference threshold, abnormal conditions in the curing process can be identified in real time, early warnings can be triggered in time, and potential quality problems can be prevented; managers can remotely adjust the heating elements and pressure control systems without on-site intervention, which can quickly respond to and solve problems in the curing process and improve production efficiency and preparation quality; by timely adjusting the curing parameters, the curing quality of the MicroLED array is ensured, which helps to improve the reliability and performance of the final product.
步骤五:胶体固化完成后,对显示屏进行一系列的预处理步骤;预处理步骤包括去除固化过程中可能产生的多余胶体材料,以及对显示屏进行精细的打磨和抛光,确保像素和导线的精确固定;形成薄膜结构的柔性显示屏体,并进行后续的测试和检查。Step 5: After the colloid is cured, the display screen undergoes a series of pretreatment steps; the pretreatment steps include removing excess colloid material that may be generated during the curing process, and finely grinding and polishing the display screen to ensure accurate fixation of pixels and wires; forming a flexible display screen body with a thin film structure, and conducting subsequent testing and inspection.
以上公开的本发明优选实施例只是用于帮助阐述本发明。优选实施例并没有详尽叙述所有的细节,也不限制该发明仅为的具体实施方式。显然,根据本说明书的内容,可作很多的修改和变化。本说明书选取并具体描述这些实施例,是为了更好地解释本发明的原理和实际应用,从而使所属技术领域技术人员能很好地理解和利用本发明。本发明仅受权利要求书及其全部范围和等效物的限制。The preferred embodiments of the present invention disclosed above are only used to help explain the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to only specific implementation methods. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.
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