CN117821934A

CN117821934A - Chamber assembly, air inlet device and substrate processing equipment

Info

Publication number: CN117821934A
Application number: CN202211197131.4A
Authority: CN
Inventors: 庞云玲; 姜勇; 刘柱晗
Original assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Current assignee: Advanced Micro Fabrication Equipment Inc Shanghai
Priority date: 2022-09-29
Filing date: 2022-09-29
Publication date: 2024-04-05
Also published as: TW202413708A

Abstract

The present invention provides a chamber assembly comprising: an annular liner assembly, an air intake insert; the bushing assembly includes: an upper bushing and a lower bushing; one side of the lower bushing is provided with a plurality of layers of first air inlet structures, each layer of first air inlet structures is divided into a plurality of first air inlet areas along the circumferential direction of the lower bushing, and each first air inlet area comprises a plurality of first air inlet channels distributed along the circumferential direction of the lower bushing; the air inlet plug-in is coupled to the lining assembly, a plurality of layers of second air inlet structures corresponding to the plurality of layers of first air inlet structures are arranged in the air inlet plug-in, each layer of second air inlet structures is divided into a plurality of second air inlet areas along the horizontal direction, each second air inlet area comprises at least one second air inlet channel, and one second air inlet channel corresponds to one first air inlet area; the process gas flows into the processing region of the substrate processing apparatus through the second gas inlet channel corresponding to the second gas inlet region and the first gas inlet channel corresponding to the first gas inlet region in sequence. The invention also provides an air inlet device and substrate processing equipment.

Description

Chamber assembly, air inlet device and substrate processing equipment

Technical Field

The present invention relates to the field of semiconductor devices, and in particular, to a chamber assembly, an air inlet device, and a substrate processing apparatus.

Background

In the semiconductor manufacturing industry, chemical vapor deposition (Chemical Vapor Deposition, CVD for short) is a well-known process for forming thin film materials (including a wide range of insulating materials, most metallic materials, and metallic alloy materials) on silicon substrates (e.g., silicon substrates). In a CVD process, gaseous molecules of a material to be deposited are supplied to a substrate to form a thin film of the material on the substrate by chemical reaction. Such formed films may be polycrystalline, amorphous or epitaxial. Typically, CVD processes are performed at high temperatures to accelerate chemical reactions and produce high quality films.

In the film deposition process, the growth environment of the film is very harsh, and various process conditions can influence the uniformity of film deposition on the surface of the substrate, and the flow direction and speed of the process gas, the uniformity of the gas flow field, the pressure distribution condition in the reaction chamber and the like directly determine the quality of the film deposited on the surface of the substrate. If the process environment of the processing area in the reaction chamber is not completely consistent, the film deposited on the surface of the substrate can generate adverse phenomena such as uneven thickness, uneven components, uneven physical characteristics and the like, thereby reducing the yield of the substrate production. However, in practical application, the process environment in the reaction chamber is often complex, especially the distribution of the process gas flow field, and precise regulation and control are difficult to realize.

Accordingly, improvements to existing substrate processing equipment are needed to improve uniformity of substrate film deposition.

Disclosure of Invention

An object of the present invention is to provide a chamber assembly, an air inlet device and a substrate processing apparatus, the chamber assembly comprising a liner assembly and an air inlet insert. The bushing component is provided with a multi-layer first air inlet structure, the air inlet plug-in component is provided with a multi-layer second air inlet structure (corresponding to the multi-layer first air inlet structure respectively), and the air inlet flange of the air inlet device is provided with a plurality of groups of third air inlet channels (corresponding to the multi-layer second air inlet structure respectively). Wherein, a third air inlet channel is communicated with a second air inlet area of the second air inlet structure of the corresponding layer, and a second air inlet channel of the second air inlet area is communicated with a first air inlet area (comprising a plurality of first air inlet channels) of the first air inlet structure of the corresponding layer. The air flow of each third air inlet channel is independently adjustable, so that the air flow field distribution of the treatment area in the reaction cavity can be effectively regulated and controlled at different heights and different azimuth angles in the process, the uniformity of the air flow distribution and the uniformity of each component can be improved, the effect of depositing the substrate film is ensured, and the yield of producing the substrate film is improved.

In order to achieve the above object, the present invention provides a chamber assembly for forming a chamber of a substrate processing apparatus, comprising: an annular liner assembly, an air intake insert;

the bushing assembly includes: an upper bushing and a lower bushing; the upper bushing is arranged above the lower bushing and combined with the lower bushing, and a processing space is defined by the inner surface of the upper bushing and the inner surface of the lower bushing; one side of the lower bushing is provided with a first air inlet structure which is distributed in multiple layers in the vertical direction; the first air inlet structure of each layer is divided into a plurality of first air inlet areas along the circumferential direction of the lower bushing, and the first air inlet areas comprise a plurality of first air inlet channels distributed along the circumferential direction of the lower bushing;

the intake insert is coupled to the bushing assembly; the inside of the air inlet plug-in is provided with a second air inlet structure which is distributed in a plurality of layers in the vertical direction; the first air inlet structures of the multiple layers respectively correspond to the second air inlet structures of the multiple layers; the second air inlet structure of each layer is divided into a plurality of second air inlet areas along the horizontal direction, and the second air inlet areas comprise at least one second air inlet channel; one of the second air intake passages corresponds to one of the first air intake areas;

The process gas flows into the processing region of the substrate processing apparatus through the second gas inlet channel corresponding to the second gas inlet region and the first gas inlet channel corresponding to the first gas inlet region in sequence.

Optionally, the first air inlet channel comprises a first air inlet and a first air outlet; the first air inlet is formed on the outer surface of the lower bushing, and the first air outlet is formed on the top of the lower bushing; the process gas flowing upward from the first gas outlet is guided to the processing region in a horizontal direction through the lower surface of the upper liner.

Optionally, the first air outlets of the first air inlet channels of each layer have the same height.

Optionally, the first air outlets of the first air inlet channels on the same layer have the same or different heights; the first air outlet of the first air inlet channel of the upper layer is positioned outside the first air outlet of the first air inlet channel of the lower layer; the first air outlet on the outer side is higher than the first air outlet on the inner side.

Optionally, a first groove is formed at the outer edge of the top surface of the lower bushing; the first groove is divided into a plurality of first notches by a plurality of L-shaped partition plates along the circumferential direction of the lower bushing; the vertical portion of L-shaped baffle laminating the lateral wall of first recess, the horizontal portion of L-shaped baffle is followed the bottom of vertical portion outwards extends and sets up on the diapire of first recess.

Optionally, the outer surface of one side of the upper bushing extends downwards to form an inlet convex part matched with the first groove, and the horizontal part of the L-shaped partition plate provides support for the inlet convex part; and a plurality of first air inlet channels of the uppermost first air inlet structure are respectively formed in the plurality of first notches by matching the plurality of L-shaped partition plates with the inlet convex parts.

Optionally, the L-shaped spacer is integrally formed with the lower bushing.

Optionally, the first air inlet structure at least comprises 3 first air inlet channels; the number of the first intake passages included in the different first intake regions is the same or different.

Alternatively, the process gases flowing from different ones of the first gas outlets flow into the processing region in parallel with each other.

Optionally, the process gas flowing out of the first gas outlet flows into the processing region in a radial direction of the lower liner.

Optionally, the air intake insert has opposed air intake insert outer and inner surfaces; the inner surface of the air inlet insert is a curved surface and is connected with the outer surface of the bushing assembly; the second air inlet channel is provided with a second air inlet and a second air outlet which are respectively formed on the outer surface of the air inlet insert and the inner surface of the air inlet insert; the second air inlet channel is provided with a horizontal linear structure; the different second intake passages may have the same or different widths.

Optionally, the second air inlet structure at least comprises 3 second air inlet channels; the number of the second air intake passages included in the different second air intake regions is the same or different.

Optionally, a second groove opposite to the first groove is further formed in the outer edge of the top surface of the lower bushing; the outer surface of the other side of the upper bushing extends downwards to form an outlet convex part matched with the second groove, and the outlet convex part corresponds to the second groove in position; a first exhaust section is formed between the side wall of the second groove and the inner wall of the outlet convex part, and a second exhaust section communicated with the first exhaust section is formed between the bottom wall of the second groove and the lower surface of the outlet convex part; the process gas is exhausted from the lower surface of the other side of the upper liner and the upper surface of the other side of the lower liner to the outside of the substrate processing equipment through the first exhaust section and the second exhaust section in sequence.

Optionally, the chamber assembly further comprises an annular purge zone liner disposed below the lower liner; a space defining a purge zone of a substrate processing apparatus by an inner surface of the purge zone liner and an inner surface of the lower liner, the purge zone being located below the process zone; the purge zone liner has a plurality of gas homogenizing holes communicating an external purge gas source with the purge zone.

Optionally, a third groove is formed in the inner edge of the bottom surface of one side of the lower bushing; along the circumferential direction of the purifying area lining, the upper surface of the purifying area lining is provided with an arc-shaped baffle matched with the third groove; the arc-shaped baffle plate corresponds to the third groove in position and is provided with an inner baffle surface and an outer baffle surface which are opposite to each other, and a buffer cavity communicated with an external purifying gas source is formed between the outer baffle surface and the side wall of the third groove; the air homogenizing holes are communicated with the outer surface of the baffle plate and the inner surface of the baffle plate.

Optionally, one side of the lower bushing further has a purge gas channel communicating an external purge gas source with the buffer chamber.

The present invention also provides an air intake device coupled to the chamber assembly according to the present invention, comprising: an air inlet flange;

the air inlet flange has opposite flange outer and inner surfaces; the inner surface of the flange is connected with the outer surface of the air inlet insert; the inside of the air inlet flange is provided with a plurality of groups of third air inlet channels; the third air inlet channel is provided with a third air inlet and a third air outlet, and the third air outlet is formed on the inner surface of the flange; a group of the third air inlet channels corresponds to a layer of the second air inlet structure; one of the third air inlet channels corresponds to one of the second air inlet areas; process gas flows from the corresponding third gas inlet channel into the second gas inlet channel corresponding to the second gas inlet zone.

Optionally, the third air outlets of the third air inlet passages in the same group have the same or different heights.

Optionally, the third air inlet and the third air outlet of the third air inlet channel have different heights respectively.

Optionally, the air inlet device further comprises a plurality of mass flowmeters and a plurality of flow splitters; one of the mass flow meters and one of the flow splitters correspond to one of the third air inlet channels; process gas from a process gas source flows into a corresponding set of the third gas inlet channels through a corresponding mass flow meter and a corresponding flow divider in sequence; the mass flowmeter is used for controlling the total flow of the process gas flowing into a corresponding group of the third air inlet channels; the flow divider is used for distributing the process gas output from the mass flowmeter to a plurality of corresponding third air inlet channels according to a set proportion.

The present invention also provides a substrate processing apparatus comprising:

a reaction chamber comprising an upper dome, a lower dome and an air inlet device according to the invention; the upper dome, the lower dome, and the liner assembly are coupled together to define a space in the upper dome, the lower dome, and the liner assembly that includes a treatment area and a purge area below the treatment area.

Optionally, the substrate processing apparatus further comprises an exhaust device; the exhaust apparatus includes: a vent insert and a vent flange;

the exhaust insert is connected and arranged between the exhaust flange and the chamber component; the interior of the exhaust insert has at least one exhaust passage communicating with the treatment area;

an exhaust cavity communicated with the exhaust channel is formed in the exhaust flange; the exhaust cavity comprises an exhaust cavity inner surface and an exhaust cavity outer surface; the vent lumen inner surface tapers inwardly in a horizontal direction away from the vent insert; the inner surface of the exhaust cavity is gradually reduced inwards along the vertical direction from top to bottom; the bottom of the exhaust cavity is provided with an exhaust port.

Optionally, the vent insert comprises opposing vent insert inner and outer surfaces; the inner surface of the exhaust insert is a curved surface which is connected with the outer surface of the bushing assembly; the exhaust passage has a fourth gas inlet and a fourth gas outlet formed in the inner surface of the exhaust insert and the outer surface of the exhaust insert, respectively, through which the process gas is guided to the exhaust chamber in a horizontal direction.

Optionally, the exhaust device further comprises an exhaust pipe embedded in the exhaust port for exhausting the process gas downwards.

Compared with the prior art, the chamber component, the air inlet device and the substrate processing equipment have the beneficial effects that:

1) The bushing assembly of the invention has a multi-layer first air inlet structure (each layer is divided into a plurality of first air inlet areas), the air inlet plug-in has a multi-layer second air inlet structure (each layer is divided into a plurality of second air inlet areas), and the air inlet flange has a plurality of third air inlet channels; the process gas flows into the processing region of the substrate processing apparatus through the corresponding third gas inlet channel, second gas inlet region, and first gas inlet region in sequence. Because the air flow of each third air inlet channel is independently adjustable, the process gas can enter the reaction chamber in a manner of being beneficial to the process by independently controlling the air parameters (such as the air type, the speed, the density, the pressure, the temperature and the like) of the third air inlet channels, so that the air flow field distribution of a processing area can be more finely regulated and controlled at different heights and different azimuth angles in the process, the uniformity of the air flow distribution and the uniformity of each component can be improved, the effect of depositing a substrate film can be ensured, the yield of the substrate film production can be improved, and the film forming uniformity can be improved.

2) The chamber component can lead out the process gas from the top of the lower lining, so that the process gas can have sufficient diffusion time before reaching the surface of the substrate, and the components are ensured to be uniformly distributed on the surface of the substrate.

3) The width of the second fluid channel can be set according to actual process requirements, and the flow rate of the process gas flowing into the processing area from the plurality of first air inlet channels corresponding to the first air inlet area can be adjusted by adjusting the width of the second air inlet channel.

4) In the invention, the first air inlet and the first air outlet of the first air inlet channel have different heights, and the third air inlet and the third air outlet of the third air inlet channel have different heights; when process gas parameters (such as flow rate, air pressure and the like) are adjusted along with the process change, the third air inlet channel can buffer the changed air flow to prevent turbulence in the chamber; at this time, the first exhaust passage may further buffer the process gas flowing in from the corresponding third intake passage, further preventing turbulence from being generated in the chamber.

5) In the invention, a buffer cavity is formed between the arc baffle plate of the liner of the purifying area and the lower liner, and the purifying gas can be fully diffused in the buffer cavity and injected into the purifying gas area more evenly through a plurality of air homogenizing holes of the arc baffle plate. The purification gas can be rapidly and uniformly distributed in the purification area through the purification area bushing, so that sediment in the purification area is greatly reduced; and meanwhile, the pressure distribution of the purifying area is uniform, and the process gas flowing into the purifying area from the processing area is reduced.

6) The exhaust flange can collect the process gas exhausted from the reaction chamber in the horizontal direction and the vertical direction and guide the process gas to the air outlet of the exhaust flange, thereby improving the exhaust efficiency of the process gas.

Drawings

For a clearer description of the technical solutions of the present invention, the drawings that are needed in the description will be briefly introduced below, it being obvious that the drawings in the following description are one embodiment of the present invention, and that, without inventive effort, other drawings can be obtained by those skilled in the art from these drawings:

FIG. 1 is a schematic view of a substrate processing apparatus;

FIG. 2 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention;

FIG. 3 is a schematic view of a chamber assembly and a vent insert in accordance with a first embodiment of the invention;

FIG. 4 is a schematic view of an upper bushing according to a first embodiment of the present invention;

FIG. 5 is a schematic view of a lower bushing according to a first embodiment of the present invention;

FIG. 6 is an enlarged view of FIG. 2 at a broken box;

FIG. 7 is a schematic view of an air inlet insert according to a first embodiment of the present invention;

FIG. 8 is a schematic view of an air inlet flange according to a first embodiment of the present invention;

FIG. 9 is a schematic view of an inner side of an air intake flange according to a first embodiment of the present invention;

FIG. 10 is a view A-A of FIG. 9;

FIG. 11 is a schematic view of a venting insert in accordance with a first embodiment of the invention;

FIG. 12 is a schematic view of an exhaust flange according to a first embodiment of the present invention;

FIG. 13 is a schematic view of a purge zone liner according to a first embodiment of the present invention.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article or terminal device comprising the element.

It is noted that the drawings are in a very simplified form and utilize non-precise ratios for convenience and clarity in aiding in the description of one embodiment of the invention.

Fig. 1 is a schematic view of a substrate processing apparatus 10 for performing vapor deposition, the substrate processing apparatus 10 comprising a horizontally flowing reaction chamber 120, a susceptor 105, a process gas injection port 113, a purge gas injection port 114, and a gas exhaust port 106.

The reaction chamber 120 is used to deposit or grow a thin film on a substrate. The reaction chamber 120 is enclosed by the intermediate base ring 118, the upper dome 116 and the lower dome 108. The upper dome 116, lower dome 108 may be flat or have a generally dome shape. The upper and lower domes 116, 108 are made of an optically transparent or translucent material that is transparent to thermal energy (e.g., a quartz material that is transparent to a particular infrared band). The intermediate susceptor 118 is typically stainless steel to provide a chamber frame for ease of assembly, and the process gas within the chamber is prevented from corroding the intermediate susceptor 118 by the quartz upper and lower liners 110, 112 disposed on the inner surface of the intermediate susceptor.

The process gas injection port 113 and the purge gas injection port 114 are provided at one end of the reaction chamber 120, and the gas discharge port 106 is provided at the other end of the reaction chamber 120 opposite to the gas injection port.

A plurality of heating elements 101 are respectively disposed above and/or below the reaction chamber 120 for supplying heat energy to the reaction chamber 120 to heat the substrate W and the susceptor 105. The heating power of the heating element 101 is adjusted based on the temperature value measured by the thermometer 102. The susceptor 105 may be rapidly rotated about a central axis of the susceptor by a drive shaft 109 to improve the uniformity of the gas flow field at the substrate surface. The susceptor 105 may be made of any of silicon carbide and graphite coated with silicon carbide.

The susceptor 105 in fig. 1 is located at a process position (the susceptor 105 has approximately the same height as the process gas injection port 113), and the susceptor 105 divides the inner space of the reaction chamber 120 into an upper space (a process region) and a lower space (a purge region) that is located above the susceptor and the purge region is located below the susceptor. Process gas flows into the processing region through the process gas injection port 113; then, a process gas flows over the substrate surface, effecting deposition of a film on the substrate surface; finally, unreacted process gases and reaction byproducts flow out of the process zone through the gas exhaust port 106. At the same time as the substrate processing, the purge gas flows into the purge region through the purge gas injection port 114 and flows out of the reaction chamber through the gas exhaust port 106. The flow of purge gas prevents or substantially prevents process gas from entering the purge zone, creates deposits on the surfaces of components in the purge zone, or reduces diffusion of process gas into the purge zone. In some cases, purge gas is also introduced into the reaction chamber when the substrate is not being processed.

The substrate processing apparatus of fig. 1 cannot precisely control the flow direction, flow rate, and distribution area of the process gas injected into the reaction chamber, and thus cannot control the gas flow field distribution of the process gas in the reaction chamber. Because the uniformity of the process gas flow field in the reaction chamber cannot be ensured, the film deposited on the surface of the substrate can generate adverse phenomena such as uneven thickness, uneven components, uneven physical characteristics and the like, thereby reducing the yield of the production of the substrate W.

In some processes, it may be desirable to inject multiple precursor gases into the processing region through the process gas injection port 113. Typically, different precursors have different pyrolysis (pyrolysis) temperatures. The precursor gas, if not uniformly diffused over the substrate, can greatly affect the composition uniformity of the thin film on the substrate surface. For example, the first precursor (having a lower pyrolysis temperature) may be cracked faster than the second precursor (having a higher pyrolysis temperature), and only a short heating time may be required to cause pyrolysis after the first precursor enters the processing region (the gas containing the first precursor may reach the edge region of the substrate corresponding to the location of the process gas injection port just before reaching the edge region of the substrate), resulting in a higher concentration of the first precursor at the edge of the substrate; a longer heating time is required for the second precursor to thermally decompose after entering the processing region, and thus a higher concentration of the second precursor is present at the center of the substrate. The substrate processing apparatus of fig. 1 cannot adjust the distribution of precursor gases within the reaction chamber based on the pyrolysis temperatures of the various precursor gases.

In addition, the purge gas in fig. 1 has a high concentration only around the purge gas injection port 114, but is not uniformly distributed inside the entire purge region. The non-uniform distribution of gas pressure within the purge zone causes the process gas to flow into the purge zone and deposit on the inner surface of the lower dome. Over time, the down-dome deposits tend to create particulate contaminants within the chamber and also affect the thermal energy provided by the heating lamps 102 below the chamber to the chamber 120, which prevents the substrate W from reaching the desired temperature.

Thus, improvements to existing substrate processing equipment are needed to improve the quality of substrate thin film deposition.

Example 1

Fig. 2 is a schematic view of a substrate processing apparatus 20 of the present invention, the apparatus comprising: a chamber assembly, an upper dome 203, a lower dome 204, an intermediate susceptor ring 205, an air inlet, an air outlet, a plurality of mass flow meters (not shown), a plurality of flow splitters (not shown), a substrate transfer port 206, and a susceptor 207.

As shown in fig. 2, the upper dome 203, lower dome 204, and intermediate base ring 205 are coupled together to form a reaction chamber of a substrate processing apparatus. As shown in fig. 2 and 3, the chamber assembly includes an annular liner assembly and an intake insert 214. The bushing assembly includes: an upper bushing 211 and a lower bushing 212. The upper liner 211 is disposed above the lower liner 212 and is combined with the lower liner 212 to define a space in the reaction chamber, which includes a process region and a purge region below the process region. The substrate transfer port 206 is used to transfer substrates into the reaction chamber. When the substrate is transferred, the driving susceptor 207 is lowered to approximately the same height as the substrate transfer port 206. Fig. 4 and 5 are schematic views of the upper liner 211 and the lower liner 212 in the present embodiment, respectively.

As shown in fig. 5, one side of the lower liner 212 has a first air intake structure that is distributed in multiple layers in the vertical direction. The first air intake structure of each layer is divided into a plurality of first air intake regions in the circumferential direction of the lower liner 212, and the first air intake regions include a plurality of first air intake passages 2121 distributed in the circumferential direction of the lower liner 212. The number of the first air inlet channels 2121 included in each layer of the first air inlet structure and the number of the first air inlet channels 2121 included in each first air inlet zone can be set according to practical requirements, which is not limited in the present invention. The air inlet and the air outlet of the air inlet structure positioned at the same layer, which are described below, can have the same height or a certain height difference. In fig. 5, a first air intake structure of 3 layers is shown, and the first air intake structure of the lowermost layer is divided into 3 first air intake regions A, B, C. In this embodiment, a sufficiently wide gas flow is provided through the first gas inlet structure to substantially cover the diameter of the substrate.

According to the invention, the first air inlet area is taken as a basic unit, and parameters (gas types, speeds, densities, pressures, temperatures and the like) of process gases flowing into each basic unit are independently controlled, so that the air flow flowing into the processing area from the corresponding first air inlet area is controlled more finely at a plurality of azimuth angles and a plurality of heights, the air flow field distribution of the processing area is effectively regulated and controlled in the process, the uniformity of the air flow distribution and the uniformity of each component are improved, the effect of depositing the substrate film is ensured, and the yield of the substrate film production is improved.

In fig. 6, 3 first air intake passages 2121 are shown arranged in a stacked manner in the vertical direction, the first air intake passages 2121 include a first air intake j1 formed at the outer surface of the lower liner 212, and a first air outlet c1 formed at the top of the lower liner 212. The process gas flowing upward from the first gas outlet c1 is guided to the processing region in the horizontal direction by the lower surface of the upper liner 211 and the upper surface of the lower liner 212. The present invention provides for a sufficient diffusion time of the process gas (e.g., precursor gas) before it reaches the substrate surface by directing the process gas from the top of the lower liner 212 to ensure uniform distribution of the components across the substrate surface.

In the present embodiment, as shown in fig. 2 and 6, the upper liner 211 and the lower liner 212 cooperate to form the uppermost first intake passage 2121.

As shown in fig. 5, the outer edge of the top surface of the lower bushing is provided with a first groove 2124, and the first groove 2124 is divided into a plurality of first notches 2123 along the circumferential direction of the lower bushing 212 by a plurality of L-shaped partition plates 2122 (which may be integrally formed with the lower bushing 212 without limitation of the present invention). The vertical portion of the L-shaped diaphragm 2122 connects to the side wall of the first recess 2124, and the horizontal portion of the L-shaped diaphragm 2122 extends outwardly from the bottom of the vertical portion and connects to the bottom wall of the first recess 2124.

As shown in fig. 2, 4 and 6, the outer surface of the upper bushing side extends downward to form an inlet lip 2111 that mates with the first recess 2124. The inlet boss is supported by the horizontal portion of the L-shaped diaphragm 2122. By the plurality of L-shaped partition plates 2122 being fitted with the inlet boss 2111, a plurality of first air intake passages 2121 of the uppermost layer are respectively formed in the plurality of first notches. As shown in fig. 6, the uppermost first intake passage 2121a includes a horizontal section and a vertical section. A horizontal section of the first air intake passage 2121a is formed between the bottom surface of the inlet boss 2111 and the bottom wall of the corresponding first notch 2123, and a vertical section of the first air intake passage 2121a is formed between the inner wall of the inlet boss 2111 and the side wall of the corresponding first notch 2123.

As shown in fig. 6, the first intake passages 2121b, 2121c below the first intake passage 2121a also include corresponding horizontal and vertical segments. The outer surface of the lower liner is opened by the horizontal section, the top surface of the lower liner is opened by the upper end of the vertical section, and the lower end of the vertical section is communicated with the corresponding horizontal section.

In the present invention, as shown in fig. 6, the first air inlets j1 and the first air outlets c1 of the first air inlet passages 2121a, 2121b, 2121c have different heights. When the gas parameters (such as flow rate, gas pressure, etc.) of the first air intake passage 2121 are adjusted according to the process variation, the first air intake passage 2121 can buffer the gas flow varying inside thereof to prevent turbulence in the processing region.

In one embodiment, the first air outlets c1 of the first air inlet channels 2121 of the layers have the same height.

In the present embodiment, as shown in fig. 5, the first air outlets c1 of the same-layer first air intake passages 2121 have the same height. As shown in fig. 5 and 6, the first air outlet c1 of the upper first air inlet passage 2121 is located outside the first air outlet c1 of the lower first air inlet passage 2121, and the first air outlet c1 on the outside is higher than the first air outlet c1 on the inside.

It will be readily appreciated that the temperature in the processing region decreases from the substrate surface to the vertical direction of the upper dome 203. In this embodiment, the first gas inlet structure of the upper layer may be used to inject the precursor gas with a lower pyrolysis temperature, and the first gas inlet structure of the lower layer may be used to inject the precursor gas with a higher pyrolysis temperature, so that pyrolysis times of different precursors are substantially synchronized, and uniform distribution of each precursor on the surface of the substrate is achieved.

In one embodiment, the process gases flowing from the different first gas outlets c1 flow into the process zone parallel to each other. In the present embodiment, the process gas flowing out of the first gas outlet c1 may flow into the processing region in the radial direction of the lower liner 212.

As shown in fig. 2, the air intake insert 214 is embedded within the interior of the intermediate base ring 205. As shown in fig. 7, the intake insert 214 has opposing intake insert outer and inner surfaces 2140, 2142. The air intake insert interior surface 2142 is curved and connects to the exterior surface of the liner assembly. The air inlet plug-in is internally provided with a plurality of layers of second air inlet structures distributed in the vertical direction, and the plurality of layers of second air inlet structures correspond to the plurality of layers of first air inlet structures respectively. The second air intake structure of each layer is divided into a plurality of second air intake areas in the horizontal direction, and the second air intake areas include one or more second air intake passages 2141. In the present embodiment, as shown in fig. 7, the lowermost second air intake structure includes 3 second air intake regions D, E, F, each of which includes one second air intake passage 2141 (this is merely an example).

As shown in fig. 7, the second air intake channel 2141 has a second air inlet j2 and a second air outlet (not shown in fig. 7) formed in the air intake insert outer surface 2140 and the air intake insert inner surface 2142, respectively. One second intake passage 2141 corresponds to one first intake zone (that is, a corresponding plurality of first intake passages 2121 of the bushing assembly may be communicated through one second intake passage 2141 of the intake insert). The process gas flows into the processing region of the substrate processing apparatus through the second gas inlet passage 2141 corresponding to the second gas inlet region and the plurality of first gas inlet passages 2121 corresponding to the first gas inlet region in sequence.

The number of second air intake areas included in each layer of the second air intake structure and the number of second air intake channels 2141 included in each second air intake area are not limited in the present invention, and in this embodiment, each layer of the second air intake structure includes at least 3 second air intake channels 2141.

In this embodiment, as shown in fig. 2, the second air intake passage 2141 has a horizontal in-line structure. The different second intake passages 2141 have the same or different widths. The width of the second air intake passage may be set according to actual process requirements, and adjusting the flow rate of the process gas flowing into the processing region through the plurality of first air intake passages 2121 corresponding to the first air intake region is achieved by adjusting the width of the second air intake passage 2141. It will be readily appreciated that when the process gas is delivered through two different width second inlet channels 2141 of the same second inlet region, the gas in the wider second inlet channel has a lower fluidity.

As shown in fig. 2, the air intake device includes an air intake flange 220. As shown in fig. 8-10, the intake flange 220 has opposing flange outer and inner surfaces 2202, 2200. The flange inner surface 2200 connects to the intake insert outer surface 2140. The air intake flange has a plurality of sets of third air intake passages 2201 therein. As shown in fig. 10, the third air intake channel 2201 has a third air inlet j3 and a third air outlet c3. As shown in fig. 8 and 9, the third air outlet c3 is formed in the inner surface of the flange. In this embodiment, the third air outlets c3 of the third air intake passages 2201 in the same group have the same height. In another embodiment, the heights of the third outlets c3 of the third inlet channels 2201 of the same set are slightly different to meet the actual requirements of the distribution of the process gases in the processing region. One set of third intake channels 2201 corresponds to one layer of second intake structure, one third intake channel 2201 corresponds to one second intake zone, and process gas flows from the corresponding third intake channel 2201 into the second intake channel 2141 corresponding to the second intake zone.

As shown in fig. 10, the third air inlet j3 may be provided at the top, bottom, and outer surfaces of the air inlet flange 220. The third intake passage 2201 includes a vertical passage through which the process gas is sequentially injected into the third intake passage 2201 and a horizontal passage through which the process gas flows from the third gas outlet c3 into the corresponding second intake passage 2141. Since the third inlet j3 and the third outlet c3 of the third inlet channel 2201 have different heights, when the gas parameters (such as the flow rate, the gas pressure, etc.) of the third inlet channel 2201 are adjusted along with the process variation, the third inlet channel 2201 can buffer the gas flow varying inside the third inlet channel 2201, so as to prevent turbulence in the processing area.

In this embodiment, one mass flowmeter and one flow divider correspond to one set of third air intake channels 2201. Process gas from a process gas source flows sequentially through a corresponding mass flow meter, flow splitter, and into a corresponding set of third gas inlet channels 2201. The mass flow meter is used to control the total flow of process gas into a corresponding set of third gas inlet channels 2201. The flow divider is configured to divide the process gas output from the mass flowmeter into a corresponding plurality of third gas intake channels 2201 according to a set ratio.

In this embodiment, the air flow of the third air inlet channel 2201 is independently regulated and controlled by the mass flowmeter and the flow divider, so that the process gas enters the processing area in a manner that is beneficial to the process without damaging the vacuum degree, the gas distribution state in the processing area is simply and conveniently regulated and controlled, the formation of a uniform flow field of the gas is facilitated, and the film forming uniformity is improved.

In another embodiment, each third intake channel 2201 is connected to a corresponding source of process gas through a corresponding mass flow meter. By independently adjusting each mass flow meter, an adjustment is achieved to independently adjust the flow of air into the process zone by the plurality of first air intake passages 2121 corresponding to the first air intake zone.

In the present invention, the gas in the third gas inlet channel may be divided into multiple paths that respectively flow into multiple second gas inlet channels 2141 corresponding to the second gas inlet region (primary homogenization), and the gas in the second gas inlet channel may be further divided into multiple paths that respectively flow into multiple first gas inlet channels 2121 corresponding to the first gas inlet region (further homogenization), so that the gas flow on the surface of the substrate may have a better flow field.

In this embodiment, as shown in fig. 5, a second groove 2125 opposite to the first groove 2124 is formed on the outer edge of the top surface of the lower bushing. The outer surface of the other side of the upper bushing extends downwardly to form an outlet tab 2112 that mates with the second recess 2125, which corresponds in location to the second recess 2125. A first exhaust section 2126 as shown in fig. 2 is formed between the side wall of the second groove 2125 and the inner wall of the outlet boss, and a second exhaust section 2127 (as shown in fig. 2) communicating with the first exhaust section 2126 is formed between the bottom wall of the second groove 2125 and the lower surface of the outlet boss. Process gas flows into the exhaust from between the lower surface of the other side of the upper liner and the upper surface of the other side of the lower liner sequentially through the first exhaust section 2126, the second exhaust section 2127.

As shown in fig. 2, the exhaust apparatus includes: a vent insert 230 and a vent flange 240. The vent insert 230 is disposed in connection between the vent flange and the chamber assembly. As shown in fig. 11, the vent insert 230 includes opposing vent insert inner surfaces 2300 and vent insert outer surfaces 2302. The exhaust insert inner surface 2300 is curved and connects to the outer surface of the liner assembly. The exhaust insert has at least one exhaust passage 2301 (two exhaust passages 2301 are shown in fig. 11) communicating with the processing region inside, and the exhaust passage 2301 has a fourth gas inlet (not shown) and a fourth gas outlet c4 formed in the exhaust insert inner surface 2300 and the exhaust insert outer surface 2302, respectively, and the process gas in the reaction chamber is guided in the horizontal direction to the inside of the exhaust flange through the exhaust passage 2301.

As shown in fig. 2 and 12, the exhaust flange 240 has an exhaust cavity 243 communicating with an exhaust passage 2301. The vent lumen 243 includes a vent lumen inner surface and a vent lumen outer surface. The vent lumen inner surface tapers inwardly in a horizontal direction away from the vent insert 230. The inner surface of the exhaust cavity tapers inwards along the vertical direction from top to bottom. The bottom of the exhaust chamber 243 is provided with an exhaust port 242. An exhaust pipe 241 is inserted into the exhaust port 242 for exhausting the process gas downward. The exhaust flange 240 of the present invention can collect the process gas exhausted from the reaction chamber in the horizontal and vertical directions and guide the process gas to the exhaust port 242 of the exhaust flange 240, thereby improving the exhaust efficiency of the process gas.

As shown in fig. 2, the chamber assembly in this embodiment further includes an annular purge zone liner 250 disposed below the lower liner 212. The space of the purge zone is defined by the inner surface of the purge zone liner 250 and the inner surface of the lower liner 212.

In the embodiment shown in fig. 2, a third groove 2128 is formed on the inner edge of the bottom surface of one side of the lower bushing, and as shown in fig. 13, an arc-shaped baffle 252 matching with the third groove 2128 is provided on the upper surface of the purge zone bushing 250 along the circumferential direction of the purge zone bushing 250. The arcuate baffle 252 corresponds in position to the third recess 2128 and has opposed baffle inner and outer surfaces. As shown in fig. 2, a buffer chamber 251 communicating with an external purge gas source is formed between the outer surface of the baffle and the sidewall of the third recess 2128. The arc-shaped baffle is provided with a plurality of air homogenizing holes 253 communicated with the outer surface of the baffle and the inner surface of the baffle.

The purge gas injected from the external process gas source is sufficiently diffused in the buffer chamber 251 and is more uniformly injected into the purge gas region through the plurality of gas uniformity holes 253 of the arc baffle 252. The purge gas can be rapidly and uniformly distributed in the purge zone through the purge zone liner 250, thereby greatly reducing the sediment in the purge zone; and meanwhile, the uniform distribution of the air pressure in the purifying area is facilitated, and the process gas flowing into the purifying area from the processing area is reduced.

While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.

Claims

1. A chamber assembly for forming a chamber of a substrate processing apparatus, comprising: an annular liner assembly, an air intake insert;

2. The chamber assembly of claim 1, wherein the first air inlet channel comprises a first air inlet and a first air outlet; the first air inlet is formed on the outer surface of the lower bushing, and the first air outlet is formed on the top of the lower bushing; the process gas flowing upward from the first gas outlet is guided to the processing region in a horizontal direction through the lower surface of the upper liner.

3. The chamber assembly of claim 2, wherein the first air outlets of the first air inlet passages of each tier are of the same height.

4. The chamber assembly of claim 2, wherein the first air outlets of the first air inlet passages of a same tier have the same or different heights; the first air outlet of the first air inlet channel of the upper layer is positioned outside the first air outlet of the first air inlet channel of the lower layer; the first air outlet on the outer side is higher than the first air outlet on the inner side.

5. The chamber assembly of claim 1, wherein an outer edge of the top surface of the lower liner is notched with a first groove; the first groove is divided into a plurality of first notches by a plurality of L-shaped partition plates along the circumferential direction of the lower bushing; the vertical portion of L-shaped baffle laminating the lateral wall of first recess, the horizontal portion of L-shaped baffle is followed the bottom of vertical portion outwards extends and sets up on the diapire of first recess.

6. The chamber assembly of claim 5, wherein an outer surface of one side of the upper liner extends downwardly to form an inlet boss that mates with said first recess, said inlet boss being supported by said horizontal portion of said L-shaped baffle; and a plurality of first air inlet channels of the uppermost first air inlet structure are respectively formed in the plurality of first notches by matching the plurality of L-shaped partition plates with the inlet convex parts.

7. The chamber assembly of claim 5, wherein the L-shaped baffle is integrally formed with the lower liner.

8. The chamber assembly of claim 1, wherein the first air intake structure comprises at least 3 of the first air intake passages; the number of the first intake passages included in the different first intake regions is the same or different.

9. The chamber assembly of claim 2, wherein process gases flowing from different ones of the first gas outlets flow into the processing region in parallel with each other.

10. The chamber assembly of claim 2, wherein process gas flowing from the first gas outlet flows into the processing region in a radial direction of the lower liner.

11. The chamber assembly of claim 1, wherein the air intake insert has opposed air intake insert outer and inner surfaces; the inner surface of the air inlet insert is a curved surface and is connected with the outer surface of the bushing assembly; the second air inlet channel is provided with a second air inlet and a second air outlet which are respectively formed on the outer surface of the air inlet insert and the inner surface of the air inlet insert; the second air inlet channel is provided with a horizontal linear structure; the different second intake passages may have the same or different widths.

12. The chamber assembly of claim 11, wherein the second air intake structure comprises at least 3 of the second air intake passages; the number of the second air intake passages included in the different second air intake regions is the same or different.

13. The chamber assembly of claim 5, wherein the outer edge of the lower liner top surface is further notched with a second notch opposite the first notch; the outer surface of the other side of the upper bushing extends downwards to form an outlet convex part matched with the second groove, and the outlet convex part corresponds to the second groove in position; a first exhaust section is formed between the side wall of the second groove and the inner wall of the outlet convex part, and a second exhaust section communicated with the first exhaust section is formed between the bottom wall of the second groove and the lower surface of the outlet convex part; the process gas is exhausted from the lower surface of the other side of the upper liner and the upper surface of the other side of the lower liner to the outside of the substrate processing equipment through the first exhaust section and the second exhaust section in sequence.

14. The chamber assembly of claim 1, further comprising an annular purge zone liner disposed below the lower liner; a space defining a purge zone of a substrate processing apparatus by an inner surface of the purge zone liner and an inner surface of the lower liner, the purge zone being located below the process zone; the purge zone liner has a plurality of gas homogenizing holes communicating an external purge gas source with the purge zone.

15. The chamber assembly of claim 14, wherein a third recess is formed in an inner edge of the bottom surface of the lower liner side; along the circumferential direction of the purifying area lining, the upper surface of the purifying area lining is provided with an arc-shaped baffle matched with the third groove; the arc-shaped baffle plate corresponds to the third groove in position and is provided with an inner baffle surface and an outer baffle surface which are opposite to each other, and a buffer cavity communicated with an external purifying gas source is formed between the outer baffle surface and the side wall of the third groove; the air homogenizing holes are communicated with the outer surface of the baffle plate and the inner surface of the baffle plate.

16. The chamber assembly of claim 15, wherein one side of the lower liner further has a purge gas channel communicating an external purge gas source with the buffer chamber.

17. An air inlet device coupled to the chamber assembly of any one of claims 1 to 16, comprising: an air inlet flange;

18. The air intake device of claim 17, wherein the third air outlets of the same set of the third air intake passages have the same or different heights.

19. The air intake apparatus of claim 17, wherein the third air inlet and the third air outlet of the third air intake passage each have a different height.

20. The air intake apparatus of claim 17, further comprising a plurality of mass flow meters, a plurality of flow splitters; one of the mass flow meters and one of the flow splitters correspond to one of the third air inlet channels; process gas from a process gas source flows into a corresponding set of the third gas inlet channels through a corresponding mass flow meter and a corresponding flow divider in sequence; the mass flowmeter is used for controlling the total flow of the process gas flowing into a corresponding group of the third air inlet channels; the flow divider is used for distributing the process gas output from the mass flowmeter to a plurality of corresponding third air inlet channels according to a set proportion.

21. A substrate processing apparatus, comprising:

a reaction chamber comprising an upper dome, a lower dome and an air inlet device according to any one of claims 17 to 20; the upper dome, the lower dome, and the liner assembly are coupled together to define a space in the upper dome, the lower dome, and the liner assembly that includes a treatment area and a purge area below the treatment area.

22. The substrate processing apparatus of claim 21, further comprising an exhaust device; the exhaust apparatus includes: a vent insert and a vent flange;

23. The substrate processing apparatus of claim 22, wherein the exhaust insert comprises opposing exhaust insert inner and exhaust insert outer surfaces; the inner surface of the exhaust insert is a curved surface which is connected with the outer surface of the bushing assembly; the exhaust passage has a fourth gas inlet and a fourth gas outlet formed in the inner surface of the exhaust insert and the outer surface of the exhaust insert, respectively, through which the process gas is guided to the exhaust chamber in a horizontal direction.

24. The substrate processing apparatus of claim 23, wherein the exhaust means further comprises an exhaust pipe embedded in the exhaust port for exhausting the process gas downward.