CN221971671U - Gas supply device and film forming device - Google Patents

Abstract

The utility model discloses a gas supply device and a film forming device, wherein the gas supply device comprises: a base; an air inlet top cover arranged on the top end of the base; a water cooling plate provided on the base; a first set of zoned rings disposed on the gas separation plate. And the second partition ring group is arranged on the water cooling plate. A part of partition rings in the third partition ring group encircle the first partition ring group, and an upper central area space and a first upper edge area space which are mutually independent are formed with the first partition ring group; the remaining partition rings in the third partition ring set surround the second partition ring set, forming a lower center region space and first and second lower edge region spaces independent of each other with the second partition ring set. The second upper/lower edge area is communicated with the space, and purge gas surrounding the reaction gas is introduced into the reaction cavity.

Description

A gas supply device and a film forming device

Technical Field

The utility model relates to the technical field of semiconductor equipment, in particular to a gas supply device and a film forming device.

Background Art

Existing film forming devices such as CVD (Chemical Vapor Deposition) equipment usually require that a variety of reaction gas raw materials be introduced into a reaction chamber for reaction, thereby growing an epitaxial thin film on a substrate in the reaction chamber.

However, the existing gas supply device or structure is used to supply gas to the reaction chamber in a pre-mixed manner, that is, multiple reaction gas raw materials are pre-mixed in the gas pipeline outside the reaction chamber, and then introduced into the reaction chamber by the gas supply device. However, different reaction gases have different reaction temperatures. For example, some reaction gases can pre-react at room temperature. Therefore, the reaction gas will pre-react in the gas pipeline outside the reaction chamber, producing reaction by-products (for example, particles), which will have an adverse effect on the subsequent film-making process.

In order to realize zoned gas supply in the reaction chamber, the prior art requires the use of multiple sets of pipelines introduced into different areas of the gas supply device. However, this solution has the problem of complex pipeline structure, increased process manufacturing difficulty, and increased equipment manufacturing cost.

Utility Model Content

The utility model aims to provide a gas supply device and a film forming device, so as to simplify the gas supply pipeline to realize the independent gas supply to the partitions in the reaction chamber, reduce the difficulty of process manufacturing, and reduce the equipment manufacturing cost.

In order to achieve the above objectives, the utility model is implemented through the following technical solutions:

A gas supply device, used for introducing a variety of reaction gases into a reaction chamber of a film forming device, comprises: a base, which is arranged on the reaction chamber; an air intake cover, which is arranged on the top of the base; a water cooling plate, which is arranged below the air intake cover and forms a containing space with the air intake cover, at least one gas separation plate, located in the containing space, for dividing the containing space into independent upper containing space and lower containing space.

At least three partition ring groups are concentrically arranged in the upper accommodating space and the lower accommodating space, respectively, for dividing the upper accommodating space and the lower accommodating space into an independent upper central area space, a first and a second upper edge area space; and dividing the lower accommodating space into an independent lower central area space, a first and a second lower edge area space.

The first central air intake passage passes through the air intake top cover and is in communication with the upper central area space.

The first edge air inlet channel passes through the air inlet top cover and is in communication with the first upper edge region space.

An air guide ring is mounted on the base and is located between the air intake cover and the base; the air guide ring comprises an air guide ring body and an air guide portion connected to the air guide ring body, wherein the air guide portion extends radially toward the center.

The second edge air inlet channel passes through the air inlet top cover, the air guide ring body and a corresponding one of the air guide parts and is in communication with the first lower edge region space.

The second central air intake passage passes through the air intake top cover, the air guide ring body and another corresponding air guide portion and is in communication with the lower central area space.

The third edge air inlet channel passes through the air inlet top cover and is in communication with the second upper edge region space.

Optionally, the first partition ring group of the three partition ring groups is arranged on the gas partition plate, and is used to divide the upper accommodating space into the independent upper central area space and upper edge area space.

The second partition ring group of the three partition ring groups is arranged on the water cooling plate, and is used to divide the lower accommodating space into an independent lower central area space and a lower edge area space.

A third partition ring group among the three partition ring groups, wherein the partition rings in the third partition ring group located on the gas partition plate are arranged around the first partition ring group to divide the upper edge area space into the independent first upper edge area space and the second upper edge area space.

The partition ring in the third partition ring group located on the water cooling plate is arranged around the second partition ring group, and is used to separate the lower edge area space into the independent first lower edge area space and the second lower edge area space.

The first central gas outlet channel runs through the lower central area space and is communicated with the reaction chamber, and is used for passing the reaction gas in the upper central area space into the reaction chamber.

The first edge gas outlet channel runs through the first lower edge region space and is communicated with the reaction chamber, and is used for passing the reaction gas in the first upper edge region space into the reaction chamber.

The second central gas outlet channel passes through the water cooling plate and is in communication with the reaction chamber, and is used for passing the reaction gas in the space of the lower central area into the reaction chamber.

The second edge gas outlet channel passes through the water cooling plate and is in communication with the reaction chamber, and is used for passing the reaction gas in the space of the lower edge region into the reaction chamber.

The second upper edge region space is connected to the second lower edge region space, and the third edge gas outlet channel passes through the water cooling plate and is connected to the reaction chamber, and is used to pass the purge gas into the reaction chamber; the purge gas surrounds the reaction gas. Optionally, it also includes: a first gas uniformity plate, which is arranged in the upper accommodating space and is arranged parallel to the gas separation plate, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the upper accommodating space.

Optionally, the first partition ring group includes: a first partition ring and a second partition ring, and the first partition ring is arranged between the first air uniforming plate and the air intake cover.

The second partition ring is disposed between the first gas uniformizing plate and the gas dividing plate.

Optionally, a plurality of first air uniforming holes are spaced apart on the first air uniforming plate.

Optionally, a second gas uniformizing plate is disposed in the lower accommodating space and parallel to the gas separation plate, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the lower accommodating space.

Optionally, the second partition ring group includes: a third partition ring and a fourth partition ring, and the third partition ring is arranged between the second gas uniformizing plate and the gas partition plate;

The fourth partition ring is arranged between the second air-distributing plate and the water-cooling plate;

The third partition ring group includes: a fifth partition ring to an eighth partition ring, wherein the fifth partition ring is arranged around the first partition ring and is located on the first air-distributing plate;

The sixth partition ring is arranged around the second partition ring and is located between the first gas uniformizing plate and the gas partition plate;

The seventh partition ring is arranged around the third partition ring and is located between the gas partition plate and the second gas uniformizing plate;

The eighth partition ring is arranged around the fourth partition ring and is located between the second air uniforming plate and the water cooling plate.

Optionally, the water-cooling plate is hollow inside and is passed with a cooling medium for cooling the reaction gas and the purge gas near the water-cooling plate.

Optionally, it further comprises: a plurality of first air guide tubes, each of the first air guide tubes is connected to the corresponding first central air outlet hole, and the second central air outlet hole and the third central air outlet hole constitute the first central air outlet channel;

A plurality of second air ducts, each of which is connected to the corresponding first edge air outlet hole, and the second edge air outlet hole and the third edge air outlet hole constitute the first edge air outlet channel.

Optionally, it also includes: a protection plate, which is arranged on the top of the base and below the water cooling plate.

Optionally, the base includes a bearing portion and a supporting portion; the bearing portion is located at the top of the base, the top of the supporting portion is connected to the bearing portion, and the bottom of the supporting portion is connected to the top of the reaction chamber; the interior of the supporting portion is hollow to form a temperature suppression zone.

Optionally, the bearing portion is annular and is provided with an extension portion, which extends radially toward the center; the air intake top cover, the water cooling plate and the protection plate are sequentially mounted on the extension portion.

Optionally, a diameter of the support portion gradually increases in a direction away from the bearing portion.

Optionally, it further comprises: a protection ring, which surrounds and is arranged close to the inner side wall of the support portion. Optionally, one of the air guide portions of the air guide ring sequentially penetrates the side walls of the third partition ring and the seventh partition ring and is connected to the lower central area space.

The other air guide portion of the air guide ring sequentially penetrates the side wall of the seventh partition ring and is connected with the first lower edge region space.

Optionally, the air guide ring and the air intake cover are integrated into one piece.

Optionally, the purge gas is argon or hydrogen.

On the other hand, the utility model further provides a film forming device, comprising the gas supply device as described above, wherein the gas supply device is used to provide process gas required for film forming on a substrate.

The utility model has at least one of the following advantages:

The utility model provides a gas supply device which is provided with a gas dividing plate and at least three partition ring groups, which are respectively concentrically arranged in the upper accommodating space and the lower accommodating space, and are used to divide the upper accommodating space and the lower accommodating space into an independent upper central area space, a first and a second upper edge area space; and to divide the lower accommodating space into an independent lower central area space, a first and a second lower edge area space.

Wherein, corresponding raw material gas is introduced into the space of the upper/lower central area and the space of the first upper/lower edge area to avoid pre-reaction of the raw material gas inside or outside the gas supply device.

A purge gas is introduced into the space of the second upper/lower edge region. The purge gas surrounds the reaction gas at the side of the reaction gas, reduces the diffusion of the reaction gas toward the side wall of the reaction chamber, improves the utilization rate of the reaction gas, and improves the uniformity of the thin film generated on the substrate.

The reaction gas is confined within the reaction zone by the purge gas, so that diffusion of the reaction gas to the side wall of the reaction chamber is reduced, formation of a coating on the side wall of the reaction chamber is reduced, and the maintenance period of the reaction chamber is extended.

In addition, the gas supply device provided by the utility model can be directly installed in the accommodation space formed by the air intake top cover and the water-cooled plate by prefabricated partition ring groups, and the above-mentioned independent spaces are formed in combination with the gas partition plate. The setting of the independent space makes it only necessary to set 5 corresponding gas supply pipelines on the air intake top cover in this embodiment to achieve the purpose of avoiding the pre-reaction of the raw material gas inside or outside the gas supply device, and the setting of the air guide ring also reduces the difficulty of arranging the gas supply pipeline in the accommodation space. It can be seen that the utility model can not only simplify the gas supply pipeline to realize the partitioned independent gas supply in the reaction chamber, but also reduce the difficulty of process manufacturing and reduce the equipment manufacturing cost . A gas supply device provided by the utility model is provided with a water-cooled structure (water-cooled plate, temperature suppression zone) at its gas outlet position, so that the interior of the temperature suppression zone is further kept at a lower temperature (for example, below 400 degrees), avoiding the generation of reaction by-products and extending the maintenance cycle of the gas supply device.

At the same time, for each raw gas, 2 or more partitions (upper/lower center area space and upper/lower edge area space) can be set to facilitate process adjustment of gas source concentration and flow rate in different areas (upper/lower center area space and upper/lower edge area space).

The first to third partition ring groups are respectively provided with partition rings having the same or different diameters. By replacing the partition rings, the position of the partition and the size of the corresponding area can be conveniently adjusted.

The utility model provides a gas supply device with a uniform gas plate inside, so that the gas flow into the reaction chamber is uniform. The gas flow field distribution can be conveniently adjusted by adjusting the aperture size or density of different positions of the uniform gas plate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic cross-sectional view of a gas supply device provided by an embodiment of the present utility model;

FIG2 is a schematic diagram of the three-dimensional structure of a partition ring in a gas supply device provided by an embodiment of the present utility model;

FIG3 is a schematic diagram of the cross-sectional position direction of a gas supply device provided by an embodiment of the utility model;

FIG4 is a schematic structural diagram of a gas supply device provided by one embodiment of the utility model cut along the A-A line in FIG3 ;

FIG5 is a schematic structural diagram of a gas supply device provided by an embodiment of the utility model cut along the B-B line in FIG3 ;

FIG6 is a schematic structural diagram of a gas supply device provided by an embodiment of the utility model cut along the C-C line in FIG3 ;

FIG7 is a schematic structural diagram of a gas supply device provided by an embodiment of the utility model cut along the D-D line in FIG3 ;

FIG8 is a schematic structural diagram of a film forming device provided in one embodiment of the present invention.

DETAILED DESCRIPTION

The following is a further detailed description of a gas supply device and a film forming device proposed in the utility model in combination with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the utility model will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the utility model. In order to make the purpose, features and advantages of the utility model more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the utility model, so it has no technical substantive significance. Any modification of the structure, change in the proportional relationship or adjustment of the size, without affecting the effect that the utility model can produce and the purpose that can be achieved, should still fall within the scope of the technical content disclosed in the utility model.

As shown in Figures 1 and 8, this embodiment provides a gas supply device, which is used to introduce a variety of reaction gases required for film formation on a substrate into a reaction chamber of a film forming device, including: a base 101, which is arranged on the reaction chamber; an air intake cover 100, which is arranged on the top of the base 101; a water-cooled plate 400, which is arranged below the air intake cover 100 and forms a accommodating space with the air intake cover 100, and at least one gas separation plate 200, located in the accommodating space, for dividing the accommodating space into independent upper accommodating space and lower accommodating space.

At least three partitioning ring groups are concentrically arranged in the upper accommodating space and the lower accommodating space, respectively, for dividing the upper accommodating space and the lower accommodating space into an independent upper central area space 1001, a first upper edge area space 1002 and a second upper edge area space 1005; and dividing the lower accommodating space into an independent lower central area space 1003, a first lower edge area space 1004 and a second lower edge area space 1006.

The first central air inlet channel 701 passes through the air inlet cover 100 and communicates with the upper central area space 1001. Preferably, the first edge air inlet channel 702 may vertically pass through the air inlet cover 100 and communicate with the upper central area space 1001.

The first edge air inlet channel 702 passes through the air inlet cover 100 and communicates with the first upper edge region space 1002. Preferably, the first edge air inlet channel 702 can vertically pass through the air inlet cover 100 and communicate with the first upper edge region space 1002.

The air guide ring 500 is mounted on the base 101, and the air guide ring 500 is located between the air intake cover 100 and the base 101; the air guide ring 500 includes an air guide ring body, an air guide portion connected to the air guide ring body (specifically, refer to the first radial extension portion 7110 and the second radial extension portion 7100 as shown in Figure 6), and the air guide portion extends radially toward the center.

The second edge air inlet channel 710 passes through the air inlet cover 100 , the air guide ring body and a corresponding one of the air guide portions and is in communication with the first lower edge region space 1004 .

The second central air intake passage 711 passes through the air intake cover 100 , the air guide ring body and another corresponding air guide portion and is in communication with the lower central area space 1003 .

The third edge air inlet channel 720 passes through the air inlet cover 100 and communicates with the second upper edge region space 1005. Preferably, the third edge air inlet channel 720 vertically passes through the air inlet cover 100 and communicates with the second upper edge region space 1005.

A gas supply device provided in this embodiment is provided with a gas separation plate and at least three partition ring groups, which are concentrically arranged in the upper accommodating space and the lower accommodating space, respectively, for dividing the upper accommodating space and the lower accommodating space into an independent upper central area space, a first and a second upper edge area space; and dividing the lower accommodating space into an independent lower central area space, a first and a second lower edge area space.

The gas supply device provided in this embodiment can form the above-mentioned independent spaces by directly installing the prefabricated partition ring group in the accommodation space formed by the air intake top cover and the water cooling plate, combined with the gas partition plate. The setting of the independent space means that this embodiment only needs to set up 5 corresponding gas supply pipelines on the air intake top cover to achieve the purpose of avoiding the pre-reaction of the raw material gas in or outside the gas supply device, and the setting of the gas guide ring also reduces the difficulty of arranging the gas supply pipeline in the accommodation space. It can be seen from this that this embodiment can not only simplify the gas supply pipeline to realize the independent gas supply of the partition in the reaction chamber, but also reduce the difficulty of process manufacturing and reduce the equipment manufacturing cost.

Please continue to refer to Figures 1 and 8. The first partition ring group of the three partition ring groups is arranged on the gas partition plate 200 to divide the upper accommodating space into an independent upper central area space 1001 and an upper edge area space.

The second partition ring group of the three partition ring groups is arranged on the water cooling plate 400, and is used to divide the lower accommodating space into an independent lower central area space 1003 and a lower edge area space.

The third partition ring group among the three partition ring groups, wherein the partition ring in the third partition ring group located on the gas partition plate 200 is arranged around the first partition ring group to separate the upper edge area space into an independent first upper edge area space 1002 and a second upper edge area space 1005.

The partition ring in the third partition ring group, which is located on the water cooling plate 400 , is arranged around the second partition ring group, and is used to separate the lower edge area space into an independent first lower edge area space 1004 and a second lower edge area space 1006 .

In this embodiment, the first central air inlet channel 701 and the first edge air inlet channel 702 are respectively connected to the corresponding external gas source of the reaction gas. The second central air inlet channel 711 and the second edge air inlet channel 710 are respectively connected to the corresponding external gas source of the reaction gas. The third edge air inlet channel 720 is connected to the corresponding external gas source of the purge gas.

In this embodiment, the first central air inlet channel 701 is used to introduce any one of a plurality of reaction gases thereinto. The first edge air inlet channel 702 is used to introduce any one of a plurality of reaction gases thereinto. The second central air inlet channel 711 is used to introduce any one of a plurality of reaction gases thereinto. The second edge air inlet channel 710 is used to introduce any one of a plurality of reaction gases thereinto.

The first central gas outlet channel 800 runs through the lower central area space 1003 and is connected to the reaction chamber 910 , and is used for passing the reaction gas in the upper central area space 1001 into the reaction chamber 910 .

The first edge gas outlet channel 801 penetrates the first lower edge region space 1004 and is in communication with the reaction chamber 910 , and is used for passing the reaction gas in the first upper edge region space 1002 into the reaction chamber 910 .

The second central gas outlet channel 810 passes through the water cooling plate 400 and is in communication with the reaction chamber 910 , and is used for passing the reaction gas in the lower central area space 1003 into the reaction chamber 910 .

The second edge gas outlet channel 802 passes through the water cooling plate 400 and is in communication with the reaction chamber 910 , and is used for passing the reaction gas in the first lower edge region space 1004 into the reaction chamber 910 .

The third edge inlet channel 720 is used to introduce purge gas therein; the second upper edge region space 1005 is in communication with the second lower edge region space 1006. The second lower edge region space 1006 is provided with a third edge outlet channel 803, which passes through the water cooling plate 400 and is in communication with the reaction chamber 910, and is used to introduce the purge gas into the reaction chamber 910; the purge gas surrounds the reaction gas.

Corresponding raw material gases are introduced into the upper/lower central area space and the first upper/lower edge area space to prevent the raw material gases from pre-reacting inside or outside the gas supply device.

A purge gas is introduced into the space of the second upper/lower edge region. The purge gas surrounds the reaction gas at the side of the reaction gas, reduces the diffusion of the reaction gas toward the side wall of the reaction chamber, improves the utilization rate of the reaction gas, and improves the uniformity of the thin film generated on the substrate.

The purge gas surrounds the reaction gas at the side of the reaction gas, reducing the diffusion of the reaction gas toward the side wall of the reaction chamber, improving the utilization rate of the reaction gas, and improving the uniformity of the thin film generated on the substrate. In addition, the reaction gas is confined in the reaction zone by the purge gas, reducing the diffusion of the reaction gas toward the side wall of the reaction chamber, reducing the formation of a coating on the side wall of the reaction chamber, and extending the maintenance period of the reaction chamber.

In this embodiment, the purge gas is argon or hydrogen, preferably a gas that does not affect the film-forming reaction of the reaction gas.

As shown in FIG. 3 and FIG. 4, this embodiment further includes: a first gas-leveling plate 600, which is arranged in the upper accommodating space and is arranged in parallel with the gas separation plate 200, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the upper accommodating space. The first gas-leveling plate 600 is roughly circular, and a plurality of first gas-leveling holes 6001 are spaced apart on the first gas-leveling plate 600. By changing the aperture size or density of the first gas-leveling holes 6001 at different positions, the concentration uniformity of the reaction gas and the purge gas in the upper accommodating space can be changed.

Please continue to refer to Figure 1. In this embodiment, the first partition ring group includes: a first partition ring 300 and a second partition ring 301; the first partition ring 300 is arranged between the first air uniforming plate 600 and the air intake top cover 100; the top of the first partition ring 300 is sealed and connected to the air intake top cover 100, and the bottom of the first partition ring 300 is sealed and connected to the first air uniforming plate 600.

The second partition ring 301 is disposed between the first gas equalizing plate 600 and the gas partition plate 200 , the top of the second partition ring 301 is sealedly connected to the first gas equalizing plate 600 , and the bottom of the second partition ring 301 is sealedly connected to the gas partition plate 200 .

The first partition ring 300 and the second partition ring 301 cooperate to divide the upper accommodating space into the upper central area space 1001 and the upper edge area space.

The annular central area of the first partition ring 300 and the annular central area of the second partition ring 301 together constitute the upper central area space 1001 .

The peripheral area separated by the first partition ring 300 and the second partition ring 301 together constitute the upper edge area space.

In this embodiment, as shown in FIG. 2 , the first partition ring 300 and the second partition ring 301 are in a circular ring shape, and the diameters of the first partition ring 300 and the second partition ring 301 can be the same, and the two are arranged opposite to each other. The diameters of the first partition ring 300 and the second partition ring 301 can be adjusted to change the size of the upper central area space 1001 and the first upper edge area space 1002. When the diameters of the first partition ring 300 and the second partition ring 301 are reduced, the upper central area space 1001 is reduced; and the first upper edge area space 1002 is enlarged. When the diameters of the first partition ring 300 and the second partition ring 301 are increased, the upper central area space 1001 is increased; and the first upper edge area space 1002 is reduced.

Please continue to refer to FIG. 1 . In this embodiment, it also includes: a second gas uniforming plate 601 , which is arranged in the lower accommodating space and parallel to the gas separation plate 200 , and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the lower accommodating space.

As shown in Fig. 6, a plurality of second gas-uniform holes 6010 are spaced apart on the second gas-uniform plate 601. By changing the aperture size or density of the second gas-uniform holes 6010 at different positions, the concentration uniformity of the reaction gas in the upper accommodating space can be changed.

Please continue to refer to Figure 1, the second partition ring group includes: a third partition ring 302 and a fourth partition ring 303, the third partition ring 302 is arranged between the second air equalizing plate 601 and the gas partition plate 200; the top of the third partition ring 302 is sealed and connected to the gas partition plate 200, and the bottom of the third partition ring 302 is sealed and connected to the second air equalizing plate 601.

The fourth partition ring 303 is disposed between the second air-distributing plate 601 and the water-cooling plate 400, the top of the fourth partition ring 303 is sealedly connected to the second air-distributing plate 601, and the bottom of the fourth partition ring 303 is sealedly connected to the water-cooling plate 400, and is used to divide the lower accommodation space into the lower central area space 1003 and the lower edge area space.

The third partition ring 302 cooperates with the fourth partition ring 303 to divide the lower accommodating space into the lower central area space 1003 and the lower edge area space.

Please continue to refer to FIG. 2 , the third partition ring 302 and the fourth partition ring 303 are in a circular shape, and the annular central area of the third partition ring 302 and the annular central area of the fourth partition ring 303 together constitute the lower central area space 1003 .

The peripheral areas separated by the third partition ring 302 and the fourth partition ring 303 together constitute the lower edge area space.

In this embodiment, the diameters of the third partition ring 302 and the fourth partition ring 303 can be the same, and the two are arranged opposite to each other. The diameters of the third partition ring 302 and the fourth partition ring 303 can be adjusted to change the size of the lower central area space 1003 and the lower edge area space. If the diameters of the third partition ring 302 and the fourth partition ring 303 are reduced, the lower central area space 1003 will be reduced; the lower edge area space will be enlarged. If the diameters of the third partition ring 302 and the fourth partition ring 303 are increased, the lower central area space 1003 will be enlarged; the lower edge area space will be reduced.

Please continue to refer to FIG. 1 and FIG. 2 , the third partition ring group includes: a fifth partition ring 304 to an eighth partition ring 307 .

The fifth partition ring 304 is disposed around the first partition ring 300 and is located on the first air uniforming plate 600 .

The sixth partition ring 305 is disposed around the second partition ring 301 and is located between the first gas uniformizing plate 600 and the gas dividing plate 200. The fifth partition ring 304 and the sixth partition ring 305 are used to divide the upper edge region space into the first upper edge region space 1002 and the second upper edge region space 1005, which are independent.

The seventh partition ring 306 is disposed around the third partition ring 302 and is located between the gas partition plate 200 and the second gas uniformizing plate 601 .

The eighth partition ring 307 is disposed around the fourth partition ring 303 and is located between the second air distribution plate 601 and the water cooling plate 400. The seventh partition ring 306 and the eighth partition ring 307 are used to divide the lower edge area space into the first lower edge area space 1004 and the second lower edge area space 1006, which are independent.

As shown in Fig. 5, the gas separator 200 is provided with a first central gas outlet 201, a first edge gas outlet 202 and a first edge purge gas outlet 203. The purge gas in the second upper edge region space 1005 flows into the second lower edge region space 1006 through the first edge purge gas outlet 203.

Please continue to refer to FIG. 6 , the second air uniforming plate 601 is further provided with a second central air outlet hole 6011 corresponding to the first central air outlet hole 201 ; and a second edge air outlet hole 6012 corresponding to the first edge air outlet hole 202 .

As shown in FIG. 7 , the water cooling plate 400 includes a plurality of third central air outlet holes 401 , a plurality of third edge air outlet holes 402 , and a plurality of fourth edge air outlet holes 403 .

In this embodiment, a plurality of third central air outlet holes 401 are distributed in the area surrounded by the fourth partition ring 303 .

A plurality of third edge air outlet holes 402 are distributed in the area between the fourth partition ring 303 and the eighth partition ring 307 .

A plurality of fourth edge air outlet holes 403 are distributed in the outer area of the eighth partition ring 307 .

Among them, some of the third central air outlet holes 401 corresponding to the second central air outlet hole 6011 are used as outlets for the reaction gas in the upper central area space, and the others are used as outlets for the reaction gas in the lower central area space 1003 .

The third edge air outlet holes 402 corresponding to the second edge air outlet holes 6012 are used as outlets for the reaction gas in the first upper edge area space 1002 , and the others are used as outlets for the reaction gas in the first lower edge area space 1004 .

The plurality of fourth edge air outlet holes 403 are used as outlets for the purge gas in the second lower edge region space 1006 .

The water cooling plate 400 is hollow inside and has a cooling medium 410 introduced therein for cooling the reaction gas and the purge gas near the water cooling plate 400 .

This embodiment provides a water cooling structure (water cooling plate, temperature suppression zone) at the gas outlet, further maintaining the interior of the temperature suppression zone at a relatively low temperature (e.g., below 400 degrees), thereby avoiding the generation of reaction by-products and extending the maintenance period of the gas supply device.

Please continue to refer to Figure 1, as shown in Figures 4 to 7, this embodiment also includes: a plurality of first air ducts 610, each of the first air ducts 610 is connected to the corresponding first central air outlet hole 201, the second central air outlet hole 6011 and the third central air outlet hole 401 constitute the first central air outlet channel 800; the reaction gas in the upper central area space 1001 is passed from the first central air outlet channel 800 into the reaction chamber 910.

A plurality of second air guide tubes 611 are provided, each of which is connected to the corresponding first edge air outlet hole 202. The second edge air outlet hole 6012 and the third edge air outlet hole 402 constitute the first edge air outlet channel 801. The reaction gas in the upper edge region space 1002 is introduced into the reaction chamber 910 through the first edge air outlet channel 801.

Please continue to refer to FIG. 1 , this embodiment further includes: a protection plate 900, which is arranged on the top of the base 101 and is located below the water-cooling plate 400. The setting of the protection plate 900 can protect the water-cooling plate 400 and prevent the generated reaction byproducts from adhering to the water-cooling plate 400. After the protection plate 900 is contaminated, it can be disassembled and cleaned for recycling, thereby reducing equipment costs.

The protection plate 900 is provided with a plurality of fourth central air outlet holes, a plurality of fifth edge air outlet holes and a plurality of sixth edge air outlet holes, wherein the fourth central air outlet hole connected to the first air guide pipe 610 serves as the air outlet of the first central air outlet channel 800; the fifth edge air outlet hole connected to the second air guide pipe 611 serves as the air outlet of the first edge air outlet channel 801. The sixth edge air outlet holes correspond to the fourth edge air outlet holes 403 one by one, and each of the sixth edge air outlet holes is used as the air outlet of the purge gas in the second lower edge region space 1006.

Please continue to refer to FIG. 8 . In the present embodiment, the base 101 includes a bearing portion 1011 and a supporting portion 1010 . The bearing portion 1011 is located at the top of the base 101 . The top of the supporting portion 1010 is connected to the bearing portion 1011 , and the bottom of the supporting portion 1010 is connected to the top of the reaction chamber. The interior of the supporting portion 1010 is hollow to form a temperature suppression zone 110 .

The bearing portion 1011 is annular and is provided with an extension portion extending radially toward the center; the air intake cover 100, the water cooling plate 400 and the protection plate 900 are sequentially mounted on the extension portion.

The diameter of the support portion 1010 gradually increases in a direction away from the bearing portion 1011. Preferably, in this embodiment, the support portion 1010 is in a truncated cone shape as a whole.

Please continue to refer to FIG. 1 , this embodiment further includes: a protection ring 120 , which surrounds and is disposed close to the inner wall of the support portion 1010 .

Please continue to refer to FIG. 6 , the second central air inlet channel 711 sequentially passes through the side walls of the third partition ring 302 and the seventh partition ring 306 , and the side walls of the air guide ring 500 and the air inlet top cover 100 are connected to the corresponding external gas source of the reaction gas.

Preferably, the air guide ring 500 is provided with two opposite first radial extension portions 7110, and the first radial extension portions 7110 can constitute a part of the second central air inlet channel 711, which can not only simplify the air inlet pipeline but also facilitate the connection between the second lower edge area space 1006 and the first lower edge area space 1004 and the lower central area space 1003, so as to pass one of a plurality of raw gas into the lower central area space 1003, thereby achieving the purpose of independent regional gas supply.

The second edge air inlet passage 710 sequentially penetrates the seventh partition ring 306 , and the side wall of the air guide ring 500 and the air inlet top cover 100 are in communication with the corresponding external gas source of the reaction gas.

Preferably, the air guide ring 500 is provided with two opposite second radial extension portions 7100, and the second radial extension portions 7100 can constitute a part of the second edge air inlet 710, which can not only simplify the air inlet pipeline but also facilitate the connection between the second lower edge area space 1006 and the first lower edge area space 1004, so as to pass one of a plurality of raw material gases into the first lower edge area space 1004, thereby achieving the purpose of independent regional gas supply.

Preferably, the inner side wall of the gas guide ring 500 and the fifth partition ring 304, the sixth partition ring 305, the seventh partition ring 306 and the eighth partition ring 307 jointly define an edge purge zone (a space jointly defined by the second upper edge region space 1005 and the second lower edge region space 1006), and the edge purge zone is not connected to other region spaces (1001-1004). In the process of passing the purge gas to the reaction chamber through the edge purge zone, the purge gas surrounds the reaction gas, reducing the diffusion amount of the reaction gas toward the side wall of the reaction chamber, improving the utilization rate of the reaction gas; at the same time, improving the uniformity of the film generated on the substrate.

In this embodiment, the gas guide ring 500 is provided to provide the reaction gas (raw gas) and the purge gas in the reaction chamber in an independent partitioning manner while simplifying the air inlet pipeline, thereby avoiding the raw gas from pre-reacting in or outside the gas supply device. The purge gas is introduced into the chamber formed by the third partition ring group and the inner wall of the reaction chamber. The purge gas surrounds the reaction gas on the side of the reaction gas, reduces the diffusion of the reaction gas toward the side wall of the reaction chamber, and improves the utilization rate of the reaction gas; at the same time, it improves the uniformity of the thin film generated on the substrate. In addition, the reaction gas is confined in the reaction zone by the purge gas, reduces the diffusion of the reaction gas to the side wall of the reaction chamber, reduces the formation of a coating on the side wall of the reaction chamber, and extends the maintenance period of the reaction chamber.

It can be understood that, in this embodiment or some other embodiments, the air guide ring 500 and the air intake cover 100 are integrated.

In this embodiment, please continue to refer to FIG. 4 , the gas supply device may further include an infrared temperature measurement channel 130, the cross section of which is in the shape of an elongated strip, and the infrared temperature measurement channel 130 sequentially passes through the air intake top cover 100, the first air-distributing plate 600, the gas separation plate 200, the second air-distributing plate 601, the water-cooling plate 400 and the protection plate 900, and is connected to the interior of the reaction chamber 910. The infrared temperature measurement channel 130 is used to perform infrared temperature measurement in the reaction chamber 910.

Since infrared light needs to pass through when measuring temperature, the infrared temperature measurement channel 130 is sealed at the top port on the air intake cover 100 using structures such as light-transmitting quartz material, sealing ring screws, etc.

On the other hand, please continue to refer to FIG. 1 and FIG. 8 , this embodiment further provides a film forming device, including the gas supply device, the reaction chamber 910 and the susceptor 920 as described above. The susceptor 920 is arranged at the bottom of the reaction chamber 910, and is used to support and heat the substrate W. The gas supply device is arranged at the top of the reaction chamber 910, and is arranged opposite to the susceptor 920, and the gas supply device is used to provide the process gas required for film formation on the substrate W. In this embodiment, the film forming device can be a CVD (Chemical Vapor Deposition) device for preparing SiC film, the gas source includes a carbon source and a silicon source, the carbon source can include a central carbon source and an edge carbon source; the silicon source can include a central silicon source and an edge silicon source, the central carbon source is introduced into the upper central space area, and the central silicon source is introduced into the lower central space area; the edge carbon source is introduced into the first upper edge space area, and the edge silicon source is introduced into the first lower edge space area, thereby realizing independent gas intake of the carbon source and the silicon source, and they will not mix before entering the reaction chamber, thereby preventing the generation of particulate matter and affecting the quality of the SiC film.

And a purge gas is introduced into the second upper edge space area, and the purge gas forms an annular edge purge zone Z3, and the inner diameter of the edge purge zone Z3 is greater than or equal to the diameter of the substrate W. It can be understood that when the central silicon source and the central carbon source are respectively introduced into the reaction chamber through the upper/lower central space area, a first reaction gas transmission area Z1 is roughly formed, and when the edge silicon source and the edge carbon source are respectively introduced into the reaction chamber through the first upper/lower edge space area, a second reaction gas transmission area Z2 is roughly formed, wherein the outer diameter of the second reaction gas transmission area Z2 is greater than the outer diameter of the first reaction gas transmission area Z1. The inner diameter of the edge purge zone Z3 is greater than or equal to the outer diameter of the second reaction gas transmission area Z2. In this way, the reaction gas can be better surrounded, the diffusion of the reaction gas toward the side wall of the reaction chamber can be reduced, the utilization rate of the reaction gas can be improved, and the uniformity of the thin film generated on the substrate can be adjusted.

The above is just one of the air intake methods. In fact, the central carbon source can also be introduced into the lower central space area, and the central silicon source can be introduced into the upper central space area; the edge carbon source can be introduced into the first lower edge space area, and the edge silicon source can be introduced into the first upper edge space.

In addition, there may be other combinations for independent air intake, and the present invention is not limited thereto.

It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

In the description of the present invention, it should be understood that the terms "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

In the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims (18)

1. A gas supply device, used for introducing a plurality of reaction gases into a reaction chamber of a film forming device, characterized in that it comprises: A base, which is arranged on the reaction chamber; An air intake cover, which is arranged on the top of the base; A water cooling plate is arranged below the air intake cover and forms an accommodation space with the air intake cover. at least one gas separation plate, located in the accommodating space, for dividing the accommodating space into an independent upper accommodating space and a lower accommodating space; At least three partition ring groups are respectively concentrically arranged in the upper accommodating space and the lower accommodating space, and are used to divide the upper accommodating space and the lower accommodating space into an independent upper central area space, a first upper edge area space and a second upper edge area space; and to divide the lower accommodating space into an independent lower central area space, a first lower edge area space and a second lower edge area space; A first central air intake passage, penetrating the air intake top cover and communicating with the upper central area space; A first edge air inlet channel, penetrating the air inlet top cover and communicating with the first upper edge region space; An air guide ring, which is mounted on the base, and is located between the air intake cover and the base; the air guide ring comprises an air guide ring body, and an air guide portion connected to the air guide ring body, and the air guide portion extends radially toward the center; A second edge air inlet channel, which passes through the air inlet top cover, the air guide ring body and a corresponding one of the air guide portions and is in spatial communication with the first lower edge region; A second central air intake passage, which passes through the air intake top cover, the air guide ring body and another corresponding air guide portion and is in spatial communication with the lower central area; The third edge air inlet channel passes through the air inlet top cover and is in communication with the second upper edge region space. 2. The gas supply device according to claim 1, characterized in that A first partition ring group among the three partition ring groups is arranged on the gas partition plate and is used to separate the upper accommodating space into the independent upper central area space and upper edge area space; A second partition ring group among the three partition ring groups is disposed on the water cooling plate and is used to separate the lower accommodating space into an independent lower central area space and a lower edge area space; A third partition ring group among the three partition ring groups, wherein the partition rings in the third partition ring group located on the gas partition plate are arranged around the first partition ring group to separate the upper edge area space into the independent first upper edge area space and the second upper edge area space; The partition ring in the third partition ring group, which is located on the water cooling plate, is arranged around the second partition ring group and is used to separate the lower edge area space into the independent first lower edge area space and the second lower edge area space; a first central gas outlet channel, which passes through the lower central area space and is in communication with the reaction chamber, and is used to pass the reaction gas in the upper central area space into the reaction chamber; a first edge gas outlet channel, which passes through the first lower edge region space and is in communication with the reaction chamber, and is used for passing the reaction gas in the first upper edge region space into the reaction chamber; A second central gas outlet channel, which passes through the water cooling plate and is in communication with the reaction chamber, and is used to pass the reaction gas in the lower central area space into the reaction chamber; A second edge gas outlet channel, which passes through the water cooling plate and is in communication with the reaction chamber, and is used to pass the reaction gas in the space of the lower edge region into the reaction chamber; The second upper edge area space is connected to the second lower edge area space. The third edge gas outlet channel passes through the water cooling plate and is connected to the reaction chamber for passing the purge gas into the reaction chamber. The purge gas surrounds the reaction gas. 3. The gas supply device as described in claim 2 is characterized in that it also includes: a first gas uniforming plate, which is arranged in the upper accommodating space and parallel to the gas separation plate, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the upper accommodating space. 4. The gas supply device according to claim 3, characterized in that the first partition ring group comprises: a first partition ring and a second partition ring, and the first partition ring is arranged between the first air uniforming plate and the air intake top cover; The second partition ring is disposed between the first gas uniformizing plate and the gas dividing plate. 5 . The gas supply device according to claim 4 , wherein a plurality of first gas uniformity holes are spaced apart on the first gas uniformity plate. 6. The gas supply device according to claim 5 is characterized in that a second gas uniformizing plate is arranged in the lower accommodating space and parallel to the gas separation plate, and is used to adjust the gas flow distribution of the reaction gas and the purge gas in the lower accommodating space. 7. The gas supply device according to claim 6, characterized in that the second partition ring group comprises: a third partition ring and a fourth partition ring, and the third partition ring is arranged between the second gas uniformizing plate and the gas partition plate; The fourth partition ring is arranged between the second air-distributing plate and the water-cooling plate; The third partition ring group includes: a fifth partition ring, a sixth partition ring, a seventh partition ring and an eighth partition ring, wherein the fifth partition ring is arranged around the first partition ring and is located on the first air-distributing plate; The sixth partition ring is arranged around the second partition ring and is located between the first gas uniformizing plate and the gas partition plate; The seventh partition ring is arranged around the third partition ring and is located between the gas partition plate and the second gas uniformizing plate; The eighth partition ring is arranged around the fourth partition ring and is located between the second air uniforming plate and the water cooling plate. 8. The gas supply device according to claim 7, characterized in that the interior of the water-cooled plate is hollow and a cooling medium is passed through it to cool the reaction gas and the purge gas in the vicinity thereof. 9. The gas supply device according to claim 8, further comprising: a plurality of first gas guide tubes, each of the first gas guide tubes being connected to the corresponding first central gas outlet hole, and the second central gas outlet hole and the third central gas outlet hole forming the first central gas outlet channel; A plurality of second air guide tubes, each of which is connected to the corresponding first edge air outlet hole, and the second edge air outlet hole and the third edge air outlet hole constitute the first edge air outlet channel. 10. The gas supply device according to claim 9, further comprising: a protection plate, which is arranged on the top of the base and below the water cooling plate. 11. The gas supply device according to claim 10 is characterized in that the base comprises a bearing portion and a supporting portion; the bearing portion is located at the top of the base, the top of the supporting portion is connected to the bearing portion, and the bottom of the supporting portion is connected to the top of the reaction chamber; the interior of the supporting portion is hollow to form a temperature suppression zone. 12. The gas supply device according to claim 11 is characterized in that the bearing portion is annular and is provided with an extension portion, which extends radially toward the center; the air intake top cover, the water cooling plate and the protection plate are sequentially mounted on the extension portion. 13 . The gas supply device according to claim 12 , wherein a diameter of the support portion gradually increases in a direction away from the bearing portion. 14 . The gas supply device according to claim 13 , further comprising: a protection ring, which surrounds and is disposed close to the inner side wall of the support portion. 15. The gas supply device according to claim 14, characterized in that one of the gas guide portions of the gas guide ring sequentially penetrates the side walls of the third partition ring and the seventh partition ring and is connected to the space of the lower central area; The other air guide portion of the air guide ring sequentially penetrates the side wall of the seventh partition ring and is connected with the first lower edge region space. 16 . The gas supply device according to claim 15 , wherein the gas guide ring and the gas intake cover are integrally provided. 17. The gas supply device according to claim 2, wherein the purge gas is argon or hydrogen. 18. A film forming device, comprising a gas supply device as claimed in any one of claims 1 to 17, wherein the gas supply device is used to provide process gas required for film formation on a substrate.