CN116469981A - A high-efficiency light-emitting diode and its preparation method - Google Patents

Abstract

The present invention provides a high-efficiency light-emitting diode and a preparation method. The high-efficiency light-emitting diode includes a substrate, a buffer layer, a non-doped GaN layer, an n-type GaN layer, an active layer, an electron blocking layer, and a p-type GaN layer; wherein the active layer includes a potential well layer and a composite barrier layer that are alternately deposited on the n-type GaN layer according to a preset period, and the composite barrier layer includes an AlGaN barrier layer and an oxygen impurity control barrier layer. The concentration of oxygen impurities in the oxygen impurity control barrier layer is not higher than 5E+16 atoms/cm ³ . The present invention inserts the boron-doped nitride structure oxygen impurity control barrier layer in the composite barrier layer, reduces the overflow of electrons to the p-layer GaN layer and the non-radiative recombination of holes, and improves the luminous efficiency of carriers in the active layer.

Description

A high-efficiency light-emitting diode and its preparation method

technical field

The invention relates to the field of optoelectronic technology, in particular to a high-efficiency light-emitting diode and a preparation method.

Background technique

At present, in addition to intrinsic defects such as nitrogen vacancies, gallium vacancies, and gallium interstitials, the unintentional doping of GaN-based epitaxial layers also introduces impurity elements such as C, H, and O during the epitaxial deposition process. The existence of defects and impurity elements occupy the original or existing position in the crystal lattice. Because the size of the impurity atoms is different from the size of the atoms occupying the position, the lattice distortion of the material will occur, and the stress state of the material will change. The presence of donor and acceptor impurities will affect the doping and carrier concentration in the growth of the material. Some impurity elements will also form compounds with other elements to affect the physical and chemical properties of the material.

The active layer is the core area of the layer where the carrier recombination of the light-emitting diode is located, and its crystal quality and the strength of the polarization effect have a great influence on the luminous efficiency. At present, AlGaN material is usually used as a barrier layer to reduce the overflow of electrons to P-type GaN and non-radiative recombination of holes to improve the luminous efficiency of light-emitting diodes.

However, in the AlGaN barrier layer, since the Al source is particularly easy to introduce oxygen impurity elements during the manufacturing process, and Al has a strong binding energy with O, it is difficult to remove, and it will be introduced into the epitaxial layer during the deposition process. In the AlGaN barrier layer, oxygen mainly occupies the nitrogen site, which causes the non-radiative recombination of carriers to increase and the luminous efficiency of the light-emitting diode to decrease.

Contents of the invention

Based on this, the purpose of the present invention is to provide a high-efficiency light-emitting diode and a preparation method to solve the problems existing in the prior art.

The first aspect of the present invention provides a high-efficiency light-emitting diode, including a substrate, and a buffer layer, a non-doped GaN layer, an n-type GaN layer, an active layer, an electron blocking layer, and a p-type GaN layer sequentially deposited on the substrate; wherein, the active layer includes a potential well layer and a composite barrier layer that are alternately deposited on the n-type GaN layer according to a preset period, and the composite barrier layer includes an AlGaN barrier layer and an oxygen impurity control barrier layer. The oxygen impurity control barrier layer is a boron-doped nitride structure. The concentration of oxygen impurities in the barrier layer is not higher than 5E+16 atoms/cm ³ .

The beneficial effects of the present invention are: the present invention provides a light-emitting diode with high light efficiency. By adding oxygen impurities of boron-doped nitride structure to the composite barrier layer to regulate the barrier layer, the Al component in the composite barrier layer can be effectively reduced, thereby reducing the oxygen in the Al source from being brought into the deposited composite barrier layer. In addition, the concentration of oxygen impurities in the oxygen impurity regulation barrier layer is not higher than 5E+16 atoms/cm ³ ; the oxygen impurity concentration of the oxygen impurity regulation barrier layer is low, which reduces the oxygen occupation of nitrogen sites to form shallow donors, resulting in increased non-radiative recombination of carriers; the lower concentration of oxygen impurities can reduce the polarization effect of the potential well layer due to the strong electronegativity of oxygen, increase the spatial wave function separation of electrons and holes, and improve the luminous efficiency of light-emitting diodes. Further, the oxygen impurity regulation barrier layer is a boron-doped nitride structure, and the boron element in the boron-doped nitride structure has a wider band gap, which reduces the overflow of electrons to the P-layer GaN layer and the non-radiative recombination of holes, and improves the luminous efficiency of carriers in the active layer.

Preferably, the composite barrier layer has a thickness of 1 nm to 50 nm.

Preferably, the thickness ratio of the AlGaN barrier layer and the oxygen impurity control barrier layer is 1:1˜1:20.

Preferably, the boron-doped nitride structure is composed of one or more combinations of boron nitride, boron-gallium-nitride, and boron-aluminum-gallium-nitride.

Preferably, the preset period is 1-20.

Preferably, the potential well layer is an InGaN layer, the thickness of the InGaN layer is 1 nm to 10 nm, and the In composition is 0.01 to 0.5.

Another aspect of the present invention also provides a method for preparing the above-mentioned high-efficiency light-emitting diode, comprising the following steps:

providing a substrate;

sequentially depositing a buffer layer, a non-doped GaN layer, an n-type GaN layer, an active layer, an electron blocking layer and a p-type GaN layer on the substrate;

Wherein, the active layer includes a potential well layer and a composite barrier layer alternately deposited on the n-type GaN layer according to a preset period, the composite barrier layer includes an AlGaN barrier layer and an oxygen impurity regulation barrier layer, the oxygen impurity regulation barrier layer is a boron-doped nitride structure, and the oxygen impurity concentration in the oxygen impurity regulation barrier layer is not higher than 5E+16 atoms/cm ³ .

Preferably, the deposition and growth temperature of the composite barrier layer is 800°C to 1000°C.

Preferably, the growth atmosphere during the deposition and growth of the composite barrier layer is a mixed gas with a composition ratio of N ₂ /H ₂ /NH ₃ in the range of 1:1:1 to 1:10:20.

Preferably, the atmospheric pressure for deposition and growth of the composite barrier layer is 50 torr-500 torr.

Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Description of drawings

Fig. 1 is a schematic structural view of a high-efficiency light-emitting diode provided by the present invention;

FIG. 2 is a schematic structural diagram of the active layer in FIG. 1;

Fig. 3 is a flowchart of the method for preparing a high-efficiency light-emitting diode provided by the present invention.

Description of main component symbols:

10. Substrate; 20. Buffer layer; 30. Non-doped GaN layer; 40. n-type GaN layer; 50. Active layer; 51. Potential well layer; 52. Composite barrier layer; 521. AlGaN barrier layer;

The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

Detailed ways

In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Several embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of illustration only.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

本发明提供一种高光效发光二极管及制备方法，高光效发光二极管包括衬底，以及依次沉积在所述衬底上的缓冲层、非掺杂GaN层、n型GaN层、有源层、电子阻挡层和P型GaN层；其中，所述有源层包括按预设周期交替沉积在所述n型GaN层上的势阱层和复合势垒层，所述复合势垒层包括AlGaN势垒层和氧杂质调控势垒层，所述氧杂质调控势垒层为硼掺氮化物结构，所述氧杂质调控势垒层中氧杂质的浓度不高于5E+16 atoms/cm ³ 。 The oxygen impurity regulation barrier layer of the boron-doped nitride structure reduces electron overflow, and the low concentration of oxygen impurities in the oxygen impurity regulation barrier layer can reduce the polarization effect of the potential well layer caused by the strong electronegativity of oxygen, increase the spatial wave function separation of electrons and holes, and improve the luminous efficiency of light-emitting diodes.

1 and 2, the high-efficiency light-emitting diode provided by the embodiment of the present invention includes a substrate 10, and a buffer layer 20, a non-doped GaN layer 30, an n-type GaN layer 40, an active layer 50, an electron blocking layer 60, and a p-type GaN layer 70 sequentially deposited on the substrate 10; wherein, the active layer includes potential well layers 51 and composite barrier layers 52 that are alternately deposited on the n-type GaN layer 40 according to a preset period, and the composite barrier layer 52 includes AlGaN barrier layers. Layer 521 and oxygen impurity control barrier layer 522, the oxygen impurity control barrier layer is a boron-doped nitride structure, and the concentration of oxygen impurities in the oxygen impurity control barrier layer is not higher than 5E+16 atoms/cm³.

Specifically, the substrate 10 can be selected from one of a sapphire substrate, a SiO ₂ sapphire composite substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a zinc oxide substrate; the sapphire substrate has a mature preparation process, high cost performance, easy cleaning and handling, good stability at high temperatures, and is widely used. Therefore, a sapphire substrate is selected. However, there are very large defects on the surface of the sapphire substrate. Defects of the epitaxial layer directly deposited on the substrate easily extend to the active layer. The active layer is the active layer of a light-emitting diode, and defects extending to the active layer will directly affect its luminous effect. Therefore, before depositing the epitaxial layer on the substrate, a buffer layer 20 needs to be deposited on the substrate 10 to reduce the surface defects of the sapphire substrate to a certain extent. Specifically, the buffer layer 20 can be an AlN buffer layer with a thickness of 10-15 nm.

The non-doped GaN layer 30 is deposited on the buffer layer 20. The thickness of the non-doped GaN layer 30 is 1-5 μm. A thicker non-doped GaN layer 30 can effectively reduce and release the compressive stress between the light-emitting diodes, improve crystal quality, and reduce reverse leakage. But at the same time, the increase in the thickness of the GaN layer consumes a lot of Ga source material, which greatly increases the epitaxy cost of the light emitting diode (LED). Therefore, further, in order to balance the quality and production cost of the light emitting diode, preferably, the thickness of the non-doped GaN layer 30 is 2-3 μm.

The main function of the n-type GaN layer 40 in the LED is to further reduce the defects between the crystals and provide enough electrons for the LED to emit light so that the electrons can smoothly move to the active layer 50 and radiatively recombine with the holes in the active layer 50; further reducing the defects of the crystal can improve the quality of the crystal, and providing enough electrons to recombine with the holes in the active layer can effectively improve the overall luminous efficiency of the LED. The more electrons and holes radiatively recombine, the better the luminous effect of the LED. Specifically, the thickness of the n-type GaN layer 40 is 2 μm˜3 μm, and the n-type GaN layer can effectively release stress and improve the luminous efficiency of the light emitting diode.

Specifically, the active layer 50 includes a potential well layer 51 and a composite barrier layer 52 alternately deposited on the n-type GaN layer 40 according to a preset period. Optionally, the potential well layer 51 is an InGaN layer, the thickness of the InGaN layer is 1 nm to 10 nm, and the In composition is 0.01 to 0.5; In addition, the cycle of alternate deposition of the potential well layer 51 and the composite barrier layer 52 can be 1-20; The barrier layer 52 includes an AlGaN barrier layer 521 and an oxygen impurity regulation barrier layer 522. Optionally, the thickness ratio of the AlGaN barrier layer 521 and the oxygen impurity regulation barrier layer 522 is 1:1˜1:20. The oxygen impurity control barrier layer is a boron-doped nitride structure. Optionally, the boron-doped nitride structure may be composed of one or more combinations of boron nitride, boron gallium nitrogen, and boron aluminum gallium nitrogen. That is, the boron-doped nitride structure may be a single-layer structure or a multi-layer structure; the concentration of oxygen impurities in the oxygen impurity control barrier layer is not higher than 5E+16 atoms/cm ³ .

Specifically, the oxygen impurity regulating barrier layer 522 has a boron-doped nitride structure, which can effectively reduce the Al composition in the composite barrier layer 52, thereby reducing the oxygen in the Al source from being brought into the deposited composite barrier layer. The concentration of oxygen impurities in the conventional AlGaN barrier layer is between 1E+17 atoms/cm ³ and 1E+18 atoms/cm ³ , but the present application controls the concentration of oxygen impurities in the oxygen impurity regulation barrier layer to be below 5E+16 atoms/cm ³ ; the oxygen impurity concentration in the composite barrier layer is relatively low, reducing oxygen occupation of nitrogen sites to form shallow donors, resulting in increased carrier non-radiative recombination. A lower oxygen impurity concentration can reduce the polarization effect of the potential well layer due to the strong electronegativity of oxygen, increase the separation of the space wave function of electrons and holes, and improve the luminous efficiency of the light-emitting diode. Further, the oxygen impurity regulates the wide band gap of the boron element in the barrier layer, which reduces the overflow of electrons to the P-layer GaN layer and the non-radiative recombination of holes, and improves the luminous efficiency of the carriers in the active layer.

The electron blocking layer 60 is an Al _a In _b GaN layer with a thickness of 10 nm to 40 nm, wherein a ranges from 0.005 to 0.1, and b ranges from 0.01 to 0.2; the P-type GaN layer 70 has a thickness of 10 nm to 50 nm and can be doped with Mg with a Mg doping concentration of 1E+19 atoms/cm ³ to 1E+21 atoms/cm ³ .

Please refer to FIG. 3 , which is a method for preparing a high-efficiency light-emitting diode in an embodiment of the present invention, which is used to prepare the above-mentioned light-emitting diode. Specifically, the method for preparing a light-emitting diode provided by the present invention includes steps S10-S80.

Step S10, providing a substrate;

Specifically, the substrate can be selected from one of a sapphire substrate, a SiO ₂ sapphire composite substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a zinc oxide substrate. Sapphire is currently the most commonly used GaN-based LED substrate material. The biggest advantages of sapphire substrates are mature technology, good stability, easy cleaning and handling, and low production costs. Therefore, in this embodiment mode, sapphire is selected as the substrate.

Step S20, depositing a buffer layer on the substrate;

Specifically, physical vapor deposition (Physical VaporDeposition, PVD) can be used to deposit the buffer layer on the substrate. The thickness of the buffer layer is 15 nm to 20 nm. In this embodiment, the AlN buffer layer is used. The AlN buffer layer provides nucleation centers with the same orientation as the substrate, and releases the stress caused by the lattice mismatch between the epitaxial GaN material and the substrate and the thermal stress caused by the thermal expansion coefficient mismatch. The contact angle enables the GaN crystal grains grown in the island shape to connect into planes within a small thickness, transforming into two-dimensional epitaxial growth.

Step S30, performing pretreatment on the substrate on which the buffer layer has been deposited.

Specifically, transfer the sapphire substrate on which the buffer layer has been deposited into a Metal-Organic Chemical Vapor Deposition (MOCVD) equipment. In the MOCVD equipment, one of the mixed gases of high-purity _H2 (hydrogen), high-purity _N2 (nitrogen), high-purity _H2 and high-purity _N2 can be used as the carrier gas, high-purity NH3 as the N source, trimethylgallium ( _TMGa ) and triethylgallium (TEGa ) as the gallium source, trimethylindium (TMIn) as the indium source, trimethylaluminum (TMAl) as the aluminum source, silane (SiH ₄ ) as the N-type dopant, and dimagnesocene (CP ₂ Mg) as the P-type dopant for epitaxial growth.

Specifically, the substrate on which the buffer layer has been deposited is treated in an H ₂ atmosphere for 1 min to 10 min at a temperature of 1000°C to 1200°C, and then nitrided to improve the crystal quality of the buffer layer and effectively improve the crystal quality of the subsequently deposited GaN epitaxial layer.

Step S40, depositing a non-doped GaN layer on the buffer layer.

After nitriding the substrate on which the buffer layer has been deposited, a non-doped GaN layer is deposited in the MOCVD equipment, using high-purity NH₃As the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium source; the growth temperature of the non-doped GaN layer is 1050°C-1200°C, the pressure is 50 torr-500torr, and the thickness is 1μm-5μm; preferably, the growth temperature of the non-doped GaN layer is 1100°C, and the growth pressure is 150 torr. The compressive stress in the non-doped GaN layer will be released through stacking faults, reducing line defects, improving crystal quality, and reducing reverse leakage, but increasing the thickness of the GaN layer consumes a lot of Ga source materials, which greatly increases the epitaxy cost of LEDs. Preferably, the growth thickness of the non-doped GaN layer is 2 μm to 3 μm, which not only saves production costs, but also GaN materials have higher crystal quality.

Step S50, depositing an n-type GaN layer on the non-doped GaN layer.

Specifically, after depositing the non-doped GaN layer, continue to deposit the n-type GaN layer in the MOCVD equipment. Optionally, the growth temperature of the n-type GaN layer is 1050°C~1200°C, the pressure is 100 torr~600 torr, the thickness is 2μm~3μm, and the Si doping concentration is 1E+19 atoms/cm ³ ~5E+19 atoms/cm ³ . Preferably, the growth temperature of the n-type GaN layer is 1120°C, the growth pressure is 100 torr, the growth thickness is 2.5 μm, and the Si doping concentration is 2.5E+19 atoms/cm ³ . First, the n-type GaN layer provides sufficient electrons for LED light emission. Secondly, the resistivity of the n-type GaN layer is higher than that of the transparent electrode on p-GaN. Therefore, sufficient Si doping can effectively reduce the resistivity of the n-type GaN layer, and the n-type GaN layer can effectively release stress and improve light emission. The luminous efficiency of a diode.

Step S60, depositing an active layer on the n-type GaN layer.

Specifically, the active layer includes a potential well layer and a composite barrier layer alternately deposited on the n-type GaN layer according to a preset period, the composite barrier layer includes an AlGaN barrier layer and an oxygen impurity regulation barrier layer, the oxygen impurity regulation barrier layer is a boron-doped nitride structure, and the oxygen impurity concentration in the oxygen impurity regulation barrier layer is not higher than 5E+16 atoms/cm ³ . Preferably, the deposition cycle of the potential well layer and the composite barrier layer is 1-20; preferably, the potential well layer is an InGaN layer, the deposition growth temperature of the InGaN layer is 700°C-900°C, the thickness of the deposition is 1 nm-10 nm, the growth atmosphere pressure is 50 torr-500 torr, and the In composition in the InGaN layer is 0.01-0.5. The deposition and growth temperature of the composite barrier layer is 800°C~1000°C, the growth atmosphere is a mixed gas with a composition ratio of N ₂ /H ₂ /NH ₃ of 1:1:1~1:10:20, and the deposition and growth atmosphere pressure is 50 torr ~500 torr. Preferably, the deposition thickness of the composite barrier layer is 1 nm to 50 nm, wherein the thickness ratio of the deposited AlGaN barrier layer and the oxygen impurity control barrier layer is 1:1 to 1:20; the oxygen impurity control barrier layer is a boron-doped nitride structure. Optionally, the boron-doped nitride structure is composed of one or more combinations of boron nitride, boron gallium nitride, and boron aluminum gallium nitride.

Specifically, the deposited oxygen impurity control barrier layer has a boron-doped nitride structure, which can effectively reduce the Al component in the composite barrier layer and reduce the Al source being brought into the deposited epitaxial layer. In addition, the concentration of oxygen impurities in the oxygen impurity control barrier layer is controlled below 5E+16 atoms/ ^cm3 ; the oxygen impurity control barrier layer in the composite barrier layer has a low oxygen impurity concentration, which prevents oxygen from mainly occupying nitrogen sites and forming shallow donors, resulting in increased non-radiative recombination of carriers. A lower oxygen impurity concentration can reduce the polarization effect of the potential well layer due to the strong electronegativity of oxygen, increase the separation of the space wave function of electrons and holes, and improve the luminous efficiency of the light-emitting diode. Further, the bandgap of the boron element in the oxygen impurity regulation barrier layer is wider, which reduces the overflow of electrons to the P-layer GaN layer and the non-radiative recombination of holes, and improves the luminous efficiency of the carriers in the active layer.

Step S70, depositing an electron blocking layer on the active layer.

Specifically, the electron blocking layer is an Al _a In _b GaN layer, the thickness of the electron blocking layer is 10nm~40nm, the growth deposition temperature is 900°C~1000°C, the pressure is 100torr~300torr, the Al composition is 0.005~0.1, and the In composition is 0.01~0.2. Preferably, the thickness of the electron blocking layer is 15 nm, the growth and deposition temperature is 965° C., the pressure is 200 torr, the Al component concentration is gradually changed from 0.01 to 0.05 along the growth direction of the epitaxial layer, and the In component is 0.01. The electron blocking layer can not only effectively limit the overflow of electrons, but also reduce the blocking of holes, improve the injection efficiency of holes to quantum wells, reduce the Auger recombination of carriers, and improve the luminous efficiency of light-emitting diodes.

Step S80, depositing a P-type GaN layer on the electron blocking layer.

Specifically, the main function of the P-type GaN layer is to provide holes to the active layer, so that electrons and holes in the active layer undergo radiative recombination to emit light. The growth temperature of the P-type GaN layer is 900~1050℃, the thickness is 10~50nm, and the growth pressure is 100~600torr. It is doped with Mg, and the doping concentration is 1 E+10 ¹⁹ ~1 E+10 ²¹ atoms/cm ³ . If the Mg doping concentration is too high, the crystal quality will be damaged, and if the doping concentration is too low, the hole concentration will be affected. Preferably, the growth temperature of the P-type GaN layer is 985° C., the thickness is 15 nm, the growth pressure is 200 torr, and the Mg doping concentration is 2E+10 ²⁰ atoms/cm ³ . At the same time, for the LED structure with V-shaped pits, the higher growth temperature of the P-type GaN layer is also conducive to merging the V-shaped pits to obtain LED epitaxial wafers with smooth surfaces.

Example 1

A light-emitting diode with high light efficiency. In this embodiment, a sapphire substrate is selected. Among them, the thickness of the composite barrier layer is 10 nm; the thickness ratio of the AlGaN barrier layer and the oxygen impurity control barrier layer is 1:5; the boron-doped nitride structure is composed of boron nitride; the preset period is 1; the potential well layer is an InGaN layer, the thickness of the InGaN layer is 10 nm, and the In composition is 0.01. The concentration of oxygen impurities in the boron-doped nitride structure is 5E+16 atoms/cm ³ . The temperature for deposition and growth of composite barrier layer is 800°C. The growth atmosphere during the deposition and growth of the composite barrier layer is a mixed gas with a composition ratio of N ₂ /H ₂ /NH ₃ of 1:1:2. The atmospheric pressure for deposition and growth of the composite barrier layer is 150 torr.

Example 2

The difference between the light emitting diode in this embodiment and the light emitting diode in embodiment 1 is that the composite barrier layer has a thickness of 50 nm; the thickness ratio of the AlGaN barrier layer and the oxygen impurity control barrier layer is 1:20. The boron-doped nitride structure consists of boron-gallium-nitride; the default period is 20.

Example 3

The difference between the light emitting diode in this embodiment and the light emitting diode in embodiment 1 is that the composite barrier layer has a thickness of 1 nm; the thickness ratio of the AlGaN barrier layer and the oxygen impurity control barrier layer is 1:1. The boron-doped nitride structure consists of boron aluminum gallium nitride; the default period is 10.

Example 4

The difference between the light-emitting diode in this embodiment and the light-emitting diode in embodiment 1 is that the thickness of the InGaN layer is 5 nm, and the In composition is 0.05; the concentration of oxygen impurities in the boron-doped nitride structure is 2E+16 atoms/cm ³ ; the boron-doped nitride structure is composed of boron nitride and boron gallium nitrogen.

Example 5

The difference between the light-emitting diode in this embodiment and the light-emitting diode in embodiment 1 is that the thickness of the InGaN layer is 1 nm, and the In composition is 0.03; the concentration of oxygen impurities in the boron-doped nitride structure is 1E+16 atoms/cm ³ ; the boron-doped nitride structure is composed of boron nitride and boron-aluminum-gallium-nitride.

Example 6

The difference between the light emitting diode in this embodiment and the light emitting diode in embodiment 1 is that the deposition and growth temperature of the composite barrier layer is 850°C. The growth atmosphere during the deposition and growth of the composite barrier layer is a mixed gas with a composition ratio of N ₂ /H ₂ /NH ₃ of 1:1:1. The atmospheric pressure for deposition and growth of the composite barrier layer is 50 torr, and the boron-doped nitride structure is composed of boron gallium nitrogen and boron aluminum gallium nitrogen.

Example 7

The difference between the light emitting diode in this embodiment and the light emitting diode in embodiment 1 is that the deposition and growth temperature of the compound barrier layer is 1000°C. The growth atmosphere during the deposition and growth of the composite barrier layer is a mixed gas with a composition ratio of N ₂ /H ₂ /NH ₃ of 1:10:20. The atmospheric pressure for the deposition and growth of the composite barrier layer is 500 torr, and the boron-doped nitride structure is composed of boron nitride, boron gallium nitrogen, and boron aluminum gallium nitrogen.

Comparative example

The difference between the light-emitting diode in this comparative example and the light-emitting diode in Example 1 is that in this comparative example, the barrier layer of the active layer is a 10 nm AlGaN barrier layer, and the oxygen impurity concentration of the AlGaN barrier layer is 1E+17 atoms/cm ³ -1E+18 atoms/cm ³ .

Please refer to Table 1, which shows the comparison results of some parameters and the corresponding light transmittance of the above-mentioned embodiments and comparative examples.

Table 1

It can be known from Table 1 that the photoelectric efficiency of the light-emitting diode epitaxial wafer provided by the present invention is increased by 0.8%-4.5% compared with the light-emitting diode epitaxial wafer prepared in mass production at present.

It should be noted that the above-mentioned implementation process is only to illustrate the implementability of the application, but this does not mean that the high-efficiency light-emitting diodes of the application only have the above-mentioned implementation processes. On the contrary, as long as the high-efficiency light-emitting diodes of the application can be implemented, they can all be included in the feasible implementation solutions of the application. In addition, the structural part of the high-efficiency light-emitting diode in the embodiment of the present invention corresponds to the method for preparing the high-efficiency light-emitting diode of the present invention, and the specific implementation details are also the same, which will not be repeated here.

In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with this embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above examples only express several implementations of the present invention, and the description thereof is relatively specific and detailed, but should not be construed as limiting the patent scope of the present invention. It should be noted that, for those skilled in the art, several modifications and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims.

Claims (10)

1. A high-efficiency light-emitting diode, characterized in that it includes a substrate, and a buffer layer, a non-doped GaN layer, an n-type GaN layer, an active layer, an electron blocking layer, and a p-type GaN layer deposited on the substrate in sequence; Wherein, the active layer includes a potential well layer and a composite barrier layer alternately deposited on the n-type GaN layer according to a preset period, the composite barrier layer includes an AlGaN barrier layer and an oxygen impurity regulation barrier layer, the oxygen impurity regulation barrier layer is a boron-doped nitride structure, and the oxygen impurity concentration in the oxygen impurity regulation barrier layer is not higher than 5E+16 atoms/cm ³ . 2. The high-efficiency light-emitting diode according to claim 1, wherein the composite barrier layer has a thickness of 1 nm to 50 nm. 3. The high-efficiency light-emitting diode according to claim 1, wherein the thickness ratio of the AlGaN barrier layer and the oxygen impurity regulation barrier layer is 1:1-1:20. 4. The high-efficiency light-emitting diode according to claim 1, wherein the boron-doped nitride structure is composed of one or more combinations of boron nitride, boron-gallium-nitride, and boron-aluminum-gallium-nitride. 5. The high-efficiency light-emitting diode according to claim 1, wherein the preset period is 1-20. 6. The high-efficiency light-emitting diode according to claim 1, wherein the potential well layer is an InGaN layer, the thickness of the InGaN layer is 1 nm-10 nm, and the In composition is 0.01-0.5. 7. A method for preparing a high-luminous-efficiency light-emitting diode as claimed in any one of claims 1 to 6, wherein the method for preparing comprises the following steps: providing a substrate; sequentially depositing a buffer layer, a non-doped GaN layer, an n-type GaN layer, an active layer, an electron blocking layer and a p-type GaN layer on the substrate; Wherein, the active layer includes a potential well layer and a composite barrier layer alternately deposited on the n-type GaN layer according to a preset period, the composite barrier layer includes an AlGaN barrier layer and an oxygen impurity regulation barrier layer, the oxygen impurity regulation barrier layer is a boron-doped nitride structure, and the oxygen impurity concentration in the oxygen impurity regulation barrier layer is not higher than 5E+16 atoms/cm ³ . 8 . The preparation method according to claim 7 , wherein the deposition and growth temperature of the composite barrier layer is 800° C. to 1000° C. 9 . The preparation method according to claim 7 , wherein the growth atmosphere during the deposition and growth of the composite barrier layer is a mixed gas with a composition ratio of N ₂ /H ₂ /NH ₃ in the range of 1:1:1 to 1:10:20. 10. The preparation method according to claim 7, characterized in that: the atmospheric pressure for deposition and growth of the composite barrier layer is 50 torr-500 torr.